Nous avons étudié les propriétés structurales et optiques d'hétérostructures de nitrures d'éléments III. Les croissances ont été réalisées par épitaxie par jets moléculaires assistée plasma d'azote. L'étude a été en particulier axée sur des structures émettant dans l'UV, à des longueurs d'onde sub-300 nm. Pour atteindre cette longueur d'onde à l'aide de couches bidimensionnelles, il est nécessaire d'utiliser des alliages ternaires d'AlGaN à forte teneur en Al (supérieure à 50 %). Nous avons donc tout d'abord corrélé les résultats de techniques de caractérisation aux conditions de croissance. Ainsi, il est possible de contrôler en partie l'homogénéité de l'alliage grâce à la température de croissance et au rapport de flux métal/azote. Nous avons ensuite tenté d'appliquer ces résultats à des hétérostructures à puits quantiques AlGaN/AlGaN. D'autre part, nous avons réalisé des alliages digitaux (super-réseaux à courte période de puits quantiques GaN/AlN). Ceux-ci se sont montré une alternative intéressante aux couches 2D pour la réalisation de dispositifs émetteurs de lumière. Enfin, une part importante du manuscrit s'attache à l'étude des effets d'un recuit après la croissance et à haute température. Cette étude a été menée sur des couches d'AlGaN ainsi que sur des boites quantiques GaN/AlN. Pour les couches d'AlGaN, nous avons constaté une augmentation de l'inhomogénéité des couches après un recuit à 950 °C. Pour les boîtes quantiques GaN, nous avons constaté dès 1000 °C, un décalage vers le bleu de la luminescence. A 1300-1500 °C, des images TEM ont clairement montré la diffusion de Ga dans la matrice AlN au-dessus des boîtes quantiques. / We studied the structural and optical properties of III-nitride heterostructures. The growth were achieved by plasma-assisted molecular beam epitaxy. The study was particularly focused on structures emitting in the UV range at sub-300 nm wavelengths. To achieve this wavelength using two-dimensional layers, it is necessary to use ternary AlGaN alloys with high Al content (above 50%). So we first correlated the results of characterization techniques to growth conditions. As a result, we find that it is possible to partially control the alloy homogeneity with the growth temperature and metal/nitrogen flux ratio. Then, we tried to apply these results to AlGaN/AlGaN quantum well heterostructures . On the other hand, we have made digital alloys (short-period GaN/AlN quantum well superlattices). They appeared as an interesting alternative to 2D layers for the realization of light emitting devices. Finally, an important part of the manuscript focuses on studying the effects of post growth annealing, at high temperature. This study was conducted on AlGaN layers and on GaN/AlN quantum dots. For AlGaN layers, we found an increase in the inhomogeneity of the alloy after annealing at 950 °C. For GaN quantum dots, a blue shift of the luminescence is observed for annealig temperature as low as 1000 °C. At 1300-1500 ° C, TEM images clearly showed the diffusion of Ga in the AlN matrix above the quantum dots.

No description available.

Microsensor technologies based on nitride semiconductor materials were developed as options for improved exhaust gas sensors in diesel exhaust systems. The main goals were to develop new sensors that can meet the requirements given by Peugeot PSA to meet upcoming EU emissions regulations for NO, NO2, and NH3 detection. Two different sensor technologies were developed based on Schottky junction and high electron mobility transistor (HEMT) devices. Novel materials such as BGaN and BGaN/GaN superlattice structures are explored. For each device, a comprehensive analytical model is developed and simulations are carried out to optimize and design the sensor devices. Materials growth is then conducted for the different semiconductor layers, followed by materials characterizations to ensure high quality materials. Device prototypes are fabricated using various materials and functional layer designs. For device testing, an experimental setup is developed. Our experimental results show excellent sensitivity; we also report selectivity between NO and NO2 for the first time for these types of devices. Finally, we modify our devices for other sensing applications such as the detection of other harmful gases and pollutants in liquid environments.

Ce travail de thèse a consisté à faire une étude théorique et expérimentale des transistors HEMTs Al(In,Ga)N/GaN . Il a été réalisé au sein du groupe Composants et Dispositifs Micro-ondes de Puissance à L’IEMN. Il s’articule autour de quatre chapitres qui permettent d’abord d’évoquer les principales propriétés physiques des matériaux nitrurés, de présenter les principes de fonctionnement des HEMTs Al(In,Ga)N/GaN et d’exposer à travers l’état de l’art, leurs performances en termes de puissances hyperfréquences. Ensuite l’analyse des contacts de type Schottky et ohmique a été réalisée notamment à températures cryogéniques dans le but d’identifier les différents modes de conduction qui s’opèrent en leur sein. Puis les caractéristiques statique et hyperfréquence de transistors HEMTs Al(In, Ga)N/GaN fabriqués pour les besoins de cette thèse ont été étudiées et présentées. Celles-ci ont permis d’étudier les performances fréquentielles de ces transistors au travers d’une étude originale basée sur le temps de transit. Enfin les effets de pièges d’interfaces qui constituent l’une des limites fondamentales inhérentes à ce type de composants ont été caractérisés et quantifiés par différentes méthodes de spectroscopies de défauts (méthode de la pente sous le seuil, de la conductance, haute fréquence - basse fréquence …). / This PhD work consisted in a theoretical and experimental study of Al(In, Ga)N/GaN HEMTs (High Electron Mobility Transistor). It was carried out in Microwave Power Devices group at IEMN (Institut d’électronique de Microélectronique et de Nanotechnologie). The manuscript is shared in four chapters: The first chapter deals with the main physical properties of nitride materials. It presents the main specificities of Al(In,Ga)N/GaN HEMTs and exposes through the state of art, their performance in terms of microwave power. The second part describes Schottky and Ohmic contacts analysis based in particular to cryogenic temperatures measurement in order to identify the different conduction modes occurring within. In the third chapters, we studied static and microwave characteristics of Al(In,Ga)N/GaN HEMTs manufactured for the purposes of this thesis. They are used to examine the frequency performance of these transistors through an original study based on transit time. And finally, the last chapter explains the effects of traps interfaces that constitute one of the fundamental limitations inherent to this type of components. They are characterized and quantified by several defects spectroscopy methods such as subthreshold slope method, conductance method, high frequency - low frequency method...

Depuis quelques années, nous assistons à l’essor d’une nouvelle filière d’électronique basée sur des supports flexibles. De nombreuses applications difficilement atteignables par l’électronique classique sont visées, c’est notamment le cas des tags RFID, des capteurs mobiles, des écrans flexibles…. Cette électronique est essentiellement basée sur des matériaux organiques pour lesquels la faible mobilité (<1cm2 /V.s) limite considérablement les performances hyperfréquences des composants. Dans ce contexte, l’intégration hétérogène de composants des filières GaN et graphène sur substrat flexible apparait comme une solution prometteuse pour des applications de puissance hyperfréquence où la conformabilité sur surface non plane est souhaitée. Ces travaux présentent d’une part, une méthode de transfert de composants HEMTs AlGaN/GaN sur ruban flexible et d’autre part, une technique de manipulation du substrat souple et de fabrication directe des composants à base de graphène sur celui-ci. Des HEMTs AlGaN/GaN à faible longueur de grille (LG = 100nm) ont été transférés sur ruban flexible et ont permis d’atteindre des résultats à l’état de l’art en termes de puissance hyperfréquence avec un gain de puissance linéaire (Gp) de 15,8 dB, une densité de puissance de sortie (Pout) de 420 mW / mm et une puissance ajoutée (PAE) de 29,6%. Pour les composants à base de graphène, une technique de manipulation du substrat flexible a été développée et a permis de fiabiliser le procédé technologique de fabrication. Une fréquence de coupure ft de 1GHz et une fréquence maximale d’oscillation fmax de 3 GHz ont été obtenues. / In recent years, the field of flexible electronics has been expanding. Many applications difficult to achieve by conventional electronics are targeted as RFID tags, mobile sensors, flexible screens… This field is essentially based on organic material for which the poor mobility (<1cm2 /V.s) limits considerably the device performances. In this context, the heterogeneous integration of GaN and graphene devices on a flexible substrate appears to be a promising solution for microwave power applications where conformability on a non-planar surface is needed. This work presents, on the one hand, a method to transfer AlGaN/GaN HEMTs onto flexible tape and, on the other hand, a technique for handling and manufacturing graphene-based components directly on the flexible substrate. HEMTs with short-gate length (LG = 100 nm) have been transferred onto flexible tape and showed state of the art results in terms of microwave power with a linear power gain (Gp) of 15.8 dB, an output power density (Pout) of 420 mW/ mm and an added power efficiency (PAE) of 29.6%. Concerning graphene-based devices, a flexible substrate handling technique has been developed making the manufacturing process more reliable. A cut-off frequency ft of 1 GHz and a maximum oscillation frequency fmax of 3 GHz were obtained.

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In this thesis, two series of self-assembled GaN and AlxGa1-xN nanorods are grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111) wafer. The Al contents in AlxGa1-xN nanorods is varied from 6% to 75% by changing the Al cell beam flux (BFM). Second, the GaN/AlGaN multiple quantum wells (MQWs) with variation thickness are grown on the GaN nanorods with a p-GaN layer on the top. Al concentration is determined by electron probe x-ray micro-analysis (EPMA) and x-ray diffraction (XRD). The reflection high-energy electron diffraction (RHEED) and scanning electron microscopy (SEM) images show that the height, density and morphology of nanorods depend on the Al content. The (micro-)PL, CL and Raman spectra also show the variation of the characterization from those of GaN to AlN. The transmission electron microscopy (TEM) images show that the GaN/AlGaN MQWs structures with well widths of 1, 2, 3, 4, 6, 8 and 16 c-LC (Lattice constant on c-direction) were successful grown on the nanorods. The (micro-)PL and CL spectra show red-shift of the peak position with the decrease of Mg-doped concentration. When the well thickness is less then 4 c-LC, the CL spectra show blue-shift of the peak position with the decrease of the well thickness due to the Quantum-confined effect and the polarization effect in MQWS.

In this study, we discuss AlGaN/GaN high electron-mobility heterostructs grown by metal organic chemical vapor deposition technique. We analyzed the samples by optical and magnetoelectrical experiments to probe the dependence of the piezoelectric effect on the structural difference. We hope our results may be useful for the design of nitride heterostructures. The E-beam evaporator operation manual given in this thesis may be useful for future users.

In order to develop high speed photo-electronic device, first, we grew one layer of GaN by MOPVE to decline lattice mismatch. Then we used PA-MBE to grow AlxGa1-xN/GaN heterostructure III-V semiconductor. Via changing the content of aluminum, we can confer the characteristic of these samples. In these samples, we controlled the content of aluminum by changing the vapor of aluminum. And then we used X-ray diffraction, SEM, AFM, low temperature Hall measurement and SdH to study the characteristic of these samples. Throughout X-ray diffraction, the aluminum content x are 1.76%, 2.3%, 14.33%, 22.03% and 37.26%. Due to (004) AlGaN Rocking Curve F.W.H.M. are only 300 arcsec, the quality of the five samples are extraordinary. In addition, SEM and AFM measurement indicate that this series samples¡¦ interface are very smooth, and the roughest sample is only 2nm. It can make sure that samples were grown in mode of two-dimensional (2D). With low temperature Hall measurement, we can find out the Coulomb scattering which is from the defect are very small in the sample A, B, C, D. And the mobility of this series samples are very high, the highest mobility is sample A at 8K which is 19593 cm2/Vs. We can observe the oscillation of the sample C, D obviously in SdH measurement indicate that the 2DEG is confined in the potential well.

We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall quantum-ring interferometer, by the spin-Hall effect, Rashba and Dresselhaus effects. This device we use the ICP Etch System to etch the contact pattern, and then use the Multi-Target Sputter to deposit the protecting layer, and then use the E-Beam Evaporator to make the contact. Finally, using the Focus Ion Beam, we fabricate the quantum-ring and gate successfully. This thesis is focused on discussing the design of the fabrication and try to solve the problem in order to be able to detect the signal of the quantum-ring interferometer at low temperature and high magnetic condition.