Orientadora: Profa. Dra. Marcia Tsuyama Escote / Tese (doutorado) - Universidade Federal do ABC, Programa de Pós-Graduação em Nanociências e Materiais Avançados, Santo André, 2017. / Neste trabalho foram estudados os efeitos da substituição do Bi por um elemento terra-rara (R = Pr, Dy) e da adição de polímeros nas propriedades físicas de compostos de BiFeO3 (BFO) sintetizados pelo método hidrotermal assistido por micro-ondas. Inicialmente, amostras de BFO foram preparadas em diferentes condições de síntese (tempo, temperatura e concentração de KOH) e com este estudo escolheu-se os parâmetros de síntese utilizados neste trabalho para síntese de todas as amostras. As sínteses hidrotermais foram realizadas a 200 °C por 120 min com concentração de KOH de 4 M. Os compostos preparados foram avaliados por meio de medidas de difração de raios X (DRX) e de imagens de microscopia eletrônica de varredura (MEV). Na segunda etapa, o efeito da substituição de bismuto (Bi) por praseodímio (Pr) ou disprósio (Dy) foi investigado por meio de medidas das propriedades físicas caracterizadas por medidas de DRX e análise pelo método de refinamento de Rietveld, imagens de MEV, espec-tros de absorção na região UV-Vis, medidas de constante dielétrica em função da frequência e medidas de magnetização em função do campo magnético aplicado (MxH) e da temperatura (MxT). Por meio das análises de DRX das amostras de Bi1-xRxFeO3, foi observado que com a substituição de Bi por R as amostras tendem a cristalizar-se de forma polimórfica, apresentando duas simetrias: uma romboédrica (R3c) e outra monoclínica (Cc), sendo que a proporção da simetria monoclínica tende a aumentar com o aumento de x. Este polimorfismo, em geral, está associado a presença de Fe2+ na estrutura do Bi1-xRxFeO3, que exerce forte influência nas pro-priedades magnéticas destes compostos. As medidas elétricas mostraram uma melhora dos va-lores da constante dielétrica destas amostras quando comparadas a amostras sem substituição e com resultados listados na literatura para compostos BiFeO3 dopados preparados por outras metodologias. Resultados de absorção na região UV-Vis dos compostos Bi1-xRxFeO3 eviden-ciam uma diminuição do gap de energia de 2,1 eV para a amostra com x = 0 a 1,7eV para com x = 0,3 (Pr). Por fim, no estudo do efeito da adição de polímeros ou surfactantes, foram adici-onados os seguintes materiais: polietilenoglicol (PEG), polivinilpirrolidona (PVP), carboxime-tilcelulose de sódio (NaCMC) ou brometo de cetiltrimetilamonio (CTAB) com o objetivo de verificar a influência de diferentes morfologias nas propriedades físicas do BFO. De fato, o surfactante na síntese do BiFeO3 modificou a morfologia destes compostos, sendo que o resul-tado diferencial foi a obtenção do BiFeO3 na forma de nanobastões utilizando o CTAB. Os demais surfactantes apresentaram formatos similares aqueles já descritos na literatura. As me-didas de UV-Vis revelaram que o valor do gap de energia variou de 1,7 a 2,1 eV com a variação da morfologia do BFO, sendo que este resultado já foi observado em compostos de BFO com diferentes morfologias na literatura. As medidas de constante dielétrica em função da frequên-cia apresentaram um comportamento similar àqueles observados para o BFO preparado sem surfactante. As caracterizações magnéticas revelaram modificações nas curvas de MxT e MxH na região de baixa temperatura (<50 K), o que foi atribuído a presença de fases adicionais nestas amostras. / In this work, the effects of chemical substitution and addition of polymers on the physical prop-erties of BiFeO3 (BFO) compounds synthesized by microwave-assisted hydrothermal method were studied. Firstly, samples of BFO were prepared using different synthesis conditions (time, temperature, KOH concentration), with this study we chose the synthesis parameters used in this work to produce all samples. In order to obtain the parameters that allow the production of compounds with the desired crystalline phase. Hydrothermal syntheses were performed at 200°C during 120 min with KOH concentration of 4M. The compounds were evaluated by X-ray diffraction (XRD) measurements and images of Scanning Electronic Microscopy (SEM). In the second step, the effect of bismuth (Bi) substitution by praseodymium (Pr) or dysprosium (Dy) was investigated by measurements of the physical properties characterized by XRD meas-urements, and analysis by the Rietveld method of refinement, SEM images, absorption spectra in the UV-Vis region, dielectric constant measurements as a function of frequency, and mag-netization measurements as a function of the applied magnetic field (MxH) and temperature (MxT). By means of the XRD analysis of Bi1-xRxFeO3 samples, it was observed that with Bi for R substitution these samples are likely to crystallize in a polymorphic way, which present a rhomboedric (R3c) and a monoclinic (Cc) symmetry. The proportion of monoclinic symmetry tends to increase with the increasing of x. In general, such polymorphism is related to the Fe2+ content in the Bi1-xRxFeO3 structure, which provides a strong influence in the magnetic proper-ties of these compounds. Electrical measurements of the samples show dielectric constants val-ues similar to values observed for undopped and dopped-BiFeO3 prepared by other methodologies. UV-vis absorption results of Bi1-xRxFeO3 compounds revealed a decrease of energy gap from 2.1 eV for sample with x =0 to 1.7 eV for x = 0.3 (Pr). Finally, study of the effect of polymers or surfactants addition, the following materials were added: polyethylene glycol (PEG), polyvinylpyrrolidone (PVP), sodium carboxymethylcellulose (NaCMC) or cetyltrimethylammonium bromide (CTAB) to verify the influence of different morphologies on the physical properties of BFO. In fact, the morphology of BFO was modified through the sur-factant addition, the most remarkable results is the nanostick shape observed for BFO samples prepared with CTAB. Samples prepared using the other surfactants revealed different mor-phology than those reported in literature. UV-vis measurements revealed energy gap varying from 1.7 to 2.1 eV for BFO samples with different morphologies. Dielectric constant measure-ments as function of frequency presents similar behavior than those observed for BFO without surfactant. Magnetic characterizations revealed changes in low temperature region (<50 K), which is attributed to the presence of additional phases in these samples.

The downscaling of transistors is assumed to come to an end within the next years, and the semiconductor nonvolatile memories are facing the same physical downscaling challenge. Therefore, it is necessary to consider new computing paradigms and new memory concepts. Resistive switching devices (also referred to as memristive switches) are two-terminal passive device, which offer a nonvolatile switching behavior by applying short bias pulses. They have been considered as one of the most promising candidates for next generation memory and nonvolatile logic applications. They provide the possibility to carry out the information processing and storage simultaneously using the same resistive switching device. This dissertation focuses on the fabrication and characterization of BiFeO3 (BFO)-based metal-insulator-metal (MIM) devices in order to exploit the potential applications in nonvolatile memory and nonvolatile reconfigurable logics. Electroforming-free bipolar resistive switching was observed in MIM structures with BFO single layer thin film. The resistive switching mechanism is understood by a model of a tunable bottom Schottky barrier. The oxygen vacancies act as the mobile donors which can be redistributed under the writing bias to change the bottom Schottky barrier height and consequently change the resistance of the MIM structures. The Ti atoms diffusing from the bottom electrode act as the fixed donors which can effectively trap and release oxygen vacancies and consequently stabilize the resistive switching characteristics. The resistive switching behavior can be engineered by Ti implantation of the bottom electrodes. MIM structures with BiFeO3/Ti:BiFeO3 (BFO/BFTO) bilayer thin films show nonvolatile resistive switching behavior in both positive and negative bias range without electroforming process. The resistance state of BFO/BFTO bilayer structures depends not only on the writing bias, but also on the polarity of reading bias. For reconfigurable logic applications, the polarity of the reading bias can be used as an additional logic variable, which makes it feasible to program and store all 16 Boolean logic functions simultaneously into the same single cell of BFO/BFTO bilayer MIM structure in three logic cycles. / Die Herunterskalierung von Transistoren für die Informationsverarbeitung in der Halbleiterindustrie wird in den nächsten Jahren zu einem Ende kommen. Auch die Herunterskalierung von nichtflüchtigen Speichern für die Informationsspeicherung sieht ähnlichen Herausforderungen entgegen. Es ist daher notwendig, neue IT-Paradigmen und neue Speicherkonzepte zu entwickeln. Das Widerstandsschaltbauelement ist ein elektrisches passives Bauelement, in dem ein der Widerstand mittels elektrischer Spannungspulse geändert wird. Solche Widerstandsschaltbauelemente zählen zu den aussichtsreichsten Kandidaten für die nächste Generation von nichtflüchtigen Speichern sowie für eine rekonfigurierbare Logik. Sie bieten die Möglichkeit zur gleichzeitigen Informationsverarbeitung und -speicherung. Der Fokus der vorliegenden Arbeit liegt bei der Herstellung und der Charakterisierung von BiFeO 3 (BFO)-basierenden Metal-insulator-Metall (MIM) Strukturen, um zukünftig deren Anwendung in nichtflüchtigen Speichern und in rekonfigurierbaren Logikschaltungen zu ermöglichen. Das Widerstandsschalten wurde in MIM-Strukturen mit einer BFO-Einzelschicht untersucht. Ein besonderes Merkmal von BFO-basierten MIM-Strukturen ist es, dass keine elektrische Formierung notwendig ist. Der Widerstandsschaltmechnismus wird durch das Modell einer variierten Schottky-Barriere erklärt. Dabei dienen Sauerstoff-Vakanzen im BFO als beweglichen Donatoren, die unter der Wirkung eines elektrischen Schreibspannungspulses nichtflüchtig umverteilt werden und die Schottky-Barriere des Bottom-Metallkontaktes ändern. Dabei spielen die während der Herstellung von BFO substitutionell eingebaute Ti-Donatoren in der Nähe des Bottom-Metallkontaktes eine wesentliche Rolle. Die Ti-Donatoren fangen Sauerstoff-Vakanzen beim Anlegen eines positiven elektrischen Schreibspannungspulses ein oder lassen diese beim Anlegen eines negativen elektrischen Schreibspannungspules wieder frei. Es wurde gezeigt, dass die Ti-Donatoren auch durch Ti-Implantation der Bottom-Elektrode in das System eingebracht werden können. MIM-Strukturen mit BiFeO 3 /Ti:BiFeO 3 (BFO/BFTO) Zweischichten weisen substitutionell eingebaute Ti-Donatoren sowohl nahe der Bottom-Elektrode als auch nahe der Top-Elektrode auf. Sie zeigen nichtflüchtiges, komplementäres Widerstandsschalten mit einer komplementär variierbaren Schottky-Barriere an der Bottom-Elektrode und an der Top-Elektrode ohne elektrische Formierung. Der Widerstand der BFO/BFTO-MIM-Strukturen hängt nicht nur von der Schreibspannung, sondern auch von der Polarität der Lesespannung ab. Für die rekonfigurierbaren logischen Anwendungen kann die Polarität der Lesespannung als zusätzliche Logikvariable verwendet werden. Damit gelingt die Programmierung und Speicherung aller 16 Booleschen Logik-Funktionen mit drei logischen Zyklen in dieselbe BFTO/BFO MIM-Struktur.

The downscaling of transistors is assumed to come to an end within the next years, and the semiconductor nonvolatile memories are facing the same physical downscaling challenge. Therefore, it is necessary to consider new computing paradigms and new memory concepts. Resistive switching devices (also referred to as memristive switches) are two-terminal passive device, which offer a nonvolatile switching behavior by applying short bias pulses. They have been considered as one of the most promising candidates for next generation memory and nonvolatile logic applications. They provide the possibility to carry out the information processing and storage simultaneously using the same resistive switching device. This dissertation focuses on the fabrication and characterization of BiFeO3 (BFO)-based metal-insulator-metal (MIM) devices in order to exploit the potential applications in nonvolatile memory and nonvolatile reconfigurable logics. Electroforming-free bipolar resistive switching was observed in MIM structures with BFO single layer thin film. The resistive switching mechanism is understood by a model of a tunable bottom Schottky barrier. The oxygen vacancies act as the mobile donors which can be redistributed under the writing bias to change the bottom Schottky barrier height and consequently change the resistance of the MIM structures. The Ti atoms diffusing from the bottom electrode act as the fixed donors which can effectively trap and release oxygen vacancies and consequently stabilize the resistive switching characteristics. The resistive switching behavior can be engineered by Ti implantation of the bottom electrodes. MIM structures with BiFeO3/Ti:BiFeO3 (BFO/BFTO) bilayer thin films show nonvolatile resistive switching behavior in both positive and negative bias range without electroforming process. The resistance state of BFO/BFTO bilayer structures depends not only on the writing bias, but also on the polarity of reading bias. For reconfigurable logic applications, the polarity of the reading bias can be used as an additional logic variable, which makes it feasible to program and store all 16 Boolean logic functions simultaneously into the same single cell of BFO/BFTO bilayer MIM structure in three logic cycles. / Die Herunterskalierung von Transistoren für die Informationsverarbeitung in der Halbleiterindustrie wird in den nächsten Jahren zu einem Ende kommen. Auch die Herunterskalierung von nichtflüchtigen Speichern für die Informationsspeicherung sieht ähnlichen Herausforderungen entgegen. Es ist daher notwendig, neue IT-Paradigmen und neue Speicherkonzepte zu entwickeln. Das Widerstandsschaltbauelement ist ein elektrisches passives Bauelement, in dem ein der Widerstand mittels elektrischer Spannungspulse geändert wird. Solche Widerstandsschaltbauelemente zählen zu den aussichtsreichsten Kandidaten für die nächste Generation von nichtflüchtigen Speichern sowie für eine rekonfigurierbare Logik. Sie bieten die Möglichkeit zur gleichzeitigen Informationsverarbeitung und -speicherung. Der Fokus der vorliegenden Arbeit liegt bei der Herstellung und der Charakterisierung von BiFeO 3 (BFO)-basierenden Metal-insulator-Metall (MIM) Strukturen, um zukünftig deren Anwendung in nichtflüchtigen Speichern und in rekonfigurierbaren Logikschaltungen zu ermöglichen. Das Widerstandsschalten wurde in MIM-Strukturen mit einer BFO-Einzelschicht untersucht. Ein besonderes Merkmal von BFO-basierten MIM-Strukturen ist es, dass keine elektrische Formierung notwendig ist. Der Widerstandsschaltmechnismus wird durch das Modell einer variierten Schottky-Barriere erklärt. Dabei dienen Sauerstoff-Vakanzen im BFO als beweglichen Donatoren, die unter der Wirkung eines elektrischen Schreibspannungspulses nichtflüchtig umverteilt werden und die Schottky-Barriere des Bottom-Metallkontaktes ändern. Dabei spielen die während der Herstellung von BFO substitutionell eingebaute Ti-Donatoren in der Nähe des Bottom-Metallkontaktes eine wesentliche Rolle. Die Ti-Donatoren fangen Sauerstoff-Vakanzen beim Anlegen eines positiven elektrischen Schreibspannungspulses ein oder lassen diese beim Anlegen eines negativen elektrischen Schreibspannungspules wieder frei. Es wurde gezeigt, dass die Ti-Donatoren auch durch Ti-Implantation der Bottom-Elektrode in das System eingebracht werden können. MIM-Strukturen mit BiFeO 3 /Ti:BiFeO 3 (BFO/BFTO) Zweischichten weisen substitutionell eingebaute Ti-Donatoren sowohl nahe der Bottom-Elektrode als auch nahe der Top-Elektrode auf. Sie zeigen nichtflüchtiges, komplementäres Widerstandsschalten mit einer komplementär variierbaren Schottky-Barriere an der Bottom-Elektrode und an der Top-Elektrode ohne elektrische Formierung. Der Widerstand der BFO/BFTO-MIM-Strukturen hängt nicht nur von der Schreibspannung, sondern auch von der Polarität der Lesespannung ab. Für die rekonfigurierbaren logischen Anwendungen kann die Polarität der Lesespannung als zusätzliche Logikvariable verwendet werden. Damit gelingt die Programmierung und Speicherung aller 16 Booleschen Logik-Funktionen mit drei logischen Zyklen in dieselbe BFTO/BFO MIM-Struktur.

The thesis presented here is focused on the synthesis of iron-bismuth alkoxides and siloxides as precursors for multiferroic BiFeO₃ systems. Spectrum of novel cyclopentadienyl substituted iron-bismuth complexes of the general type [{Cp^y(CO)₂Fe}BiX₂], as potential precursors for cyclopentadienyl iron-bismuth alkoxides or siloxides [{Cp^y(CO)₂Fe}Bi(OR)₂] (R-O^tBu, OSiMe₂^tBu), were obtained and characterised. The use of wide range of cyclopentadienyl rings in the iron carbonyl compounds allowed for a comprehensive analysis of its influence on structure, reactivity as well as solubility of the studied complexes, which are crucial features of potential precursors. The results fill the gap in the chemistry of cyclopentadienyl iron-bismuth complexes. In this work a new method of preparation of novel alkoxides or siloxides iron-bismuth complexes has been developed. In the reaction of Fe₂(CO)₉ with Bi(O^tBu)₃ or Bi(OSiMe₂^tBu)₃ molecular precursors for preparation of heterobimetallic oxides were obtained. Moreover, characterised compounds allowed to extend the knowledge about existence of iron-bismuth clusters and open new ways for the further investigations on the carbonyl iron-bismuth siloxides and alkoxides. The resulting compounds are good single source precursors for the BiFeO₃ materials. The presented synthetic route can be generalized and other heterobimetallic compounds can be obtained. This work should also be helpful in the designing new precursors for synthesis of metal oxides.

Over the last two decades, great progress has been made in the understanding of multiferroic materials, ones where multiple long-range orders simultaneously exist. However, much of the research has focused on bulk systems. If these materials are to be incorporated into devices, they would not be in bulk form, but would be miniaturized, such as in nanoparticle form. Accordingly, a better understanding of multiferroic nanoparticles is necessary. This manuscript examines the multiferroic phase diagram of multiferroic nanoparticles related to system size and surface-induced magnetic anisotropy. There is a particular focus on bismuth ferrite, the room-temperature antiferromagnetic-ferroelectric multiferroic. Theoretical results will be presented which show that at certain sizes, a bistability develops in the cycloidal wavevector. This implies bistability in the ferroelectric and magnetic moments of the nanoparticles. This novel magnetoelectric bistability may be of use in the creation of an electrically-written, magnetically-read memory element. / Graduate