Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

Résumé : Ce travail avait pour but de contribuer à la détermination précise des paramètres de raies du disulfure de carbone en vue d'applications atmosphériques. Il s'agissait de déterminer théoriquement et expérimentalement les coefficients d'élargissement collisionnel de raies de la bande gamma 3 du disulfure de carbone perturbé par l'air atmosphérique ainsi que leur dépendance en température. Pour cela, nous avons déterminé les coefficients d'élargissement collisionnel du disulfure de carbone perturbé par l'azote, l'oxygène et enfin par l'argon, principaux composants de l'air atmosphérique, aussi bien que leur dépendance en température. En outre, nous avons déterminé théoriquement et expérimentalement les coefficients d'auto élargissement collisionnel de raies de la bande gamma 3 - gamma 1 du disulfure de carbone, à température ambiante. La dépendance vibrationnelle des largeurs collisionnelles étant négligeable, les résultats sont valables quel que soit le niveau supérieur de la transition. Enfin, nous avons déterminé les intensités absolues de quelques raies de la bande gamma 3 - gamma 1 du disulfure de carbone qui nous ont permis de mettre en exergue une des applications atmosphériques des paramètres de raie mesurés en laboratoire. Pour la partie expérimentale, un spectromètre diode-laser haute résolution (5x10-4cm-1) a été utilisé pour enregistrer les différents spectres. De ces derniers, nous avons déterminé les différents paramètres de raie d'absorption en ajustant aux profils expérimentaux des modèles de profils théoriques. Du point de vue théorique, les différents coefficients d'élargissement collisionnel ont été calculés sur base du formalisme semi-classique d'Anderson-Tsao-Curnutte amélioré par J. Bonamy et D. Robert, moyennant quelques modifications pour accorder les valeurs à celles mesurées en laboratoire. Ceci a permis de valider les différents potentiels d'interaction pour les différents systèmes moléculaires considérés. Abstract The purpose of this thesis was to contribute to the accurate determination of line parameters of carbon disulfide for atmospheric applications. We have determined experimentally as well as theoretically the collisional broadening coefficients of lines in the gamma 3 band of carbon disulfide perturbed by the atmospheric air and their temperature dependence. To this end, we determined collisional broadening coefficients, as well as their temperature dependence, of carbon disulfide diluted in nitrogen, oxygen and argon; the main components of the atmospheric air. In addition, we determined the self broadening coefficients of lines in the gamma 3 - gamma 1 band of carbon disulfide at room temperature. As the vibrational dependence of collisional widths is negligible, our results are valid whatever the higher level of transition. Finally, we determined the absolute intensities of a few lines in the gamma 3 - gamma 1 band of carbon disulfide, which have enabled us to highlight one of the atmospheric applications of line parameters measured in the laboratory. For the experimental part, a high resolution diode-laser spectrometer (5x10-4cm-1) was used to record the different spectra. Of these, we determined the parameters of absorption line by adjusting theoretical lineshape models to experimental profiles. From a theoretical point of view, different collisional broadening coefficients were calculated on the basis of semi classical formalism of Anderson-Tsao-Curnutte improved by J. Bonamy and D. Robert, with some modifications to make the calculated values more consistent with those measured. This enabled us to validate the different potentials of interactions for the different molecular systems considered.

With the use of an incoherent binary nucleon-nucleon collision model of heavy ion collisions for simulating particle production, it is demonstrated that the nuclear modification factors, R_{AA} and R_{CP}, are less than unity for hard scattering in the absence of any nuclear modification effects. The nuclear modification factor R_{dAu} is also shown to approach or exceed unity only if p_T broadening is taken into account. With a simple phenomenological parameter, the mean nucleon energy loss fraction, this model yields particle distributions that are comparable to those of experiment. The nuclear geometry is described by the Glauber model, and particle production is simulated by the PYTHIA event generator.

The present thesis is devoted to theoretical studies of resonant X-ray scattering and propagation of strong X-ray pulses. In the first part of the thesis the nuclear dynamics of different molecules is studied using resonant X-ray Raman and resonant Auger scattering techniques. We show that the shortening of the scattering duration by the detuning results in a purification of the Raman spectra from overtones and soft vibrational modes. The simulations are in a good agreement with measurements, performed at the MAX-II and the Swiss Light Source with vibrational resolution. We explain why the scattering to the ground state nicely displays the vibrational structure of liquid acetone in contrast to excited final state. Theory of resonant X-ray scattering by liquids is developed. We show that, contrary to aqueous acetone, the environmental broadening in pure liquid acetone is twice smaller than the broadening by soft vibrational modes significantly populated at room temperature. Similar to acetone, the "elastic" band of X-ray Raman spectra of molecular oxygen is strongly affected by the Thomson scattering. The Raman spectrum demonstrates spatial quantum beats caused by two interfering wave packets with different momenta as the oxygen atoms separate. It is found that the vibrational scattering anisotropy caused by the interference of the "inelastic" Thomson and resonant scattering channels in O2. A new spin selection rule is established in inelastic X-ray Raman spectra of O2. It is shown that the breakdown of the symmetry selection rule based on the parity of the core hole, as the core hole and excited electron swap parity. Multimode calculations explain the two thresholds of formation of the resonant Auger spectra of the ethene molecule by the double-edge structure of absorption spectrum caused by the out-of- and in-plane modes. We predict the rotational Doppler effect and related broadening of X-ray photoelectron and resonant Auger spectra, which has the same magnitude as its counterpart-the translational Doppler effect. The second part of the thesis explores the interaction of the medium with strong X-ray free-electron laser (XFEL) fields. We perform simulations of nonlinear propagation of femtosecond XFEL pulses in atomic vapors by solving coupled Maxwell's and density matrix equations. We show that self-seeded stimulated X-ray Raman scattering strongly influences the temporal and spectral structure of the XFEL pulse. The generation of Stokes and four-wave mixing fields starts from the seed field created during pulse propagation due to the formation of extensive ringing pattern with long spectral tail. We demonstrate a compression into the attosecond region and a slowdown of the XFEL pulse up to two orders of magnitude. In the course of pulse propagation, the Auger yield is strongly suppressed due to the competitive channel of stimulated emission. We predict a strong X-ray fluorescence from the two-core-hole states of Ne created in the course of the two-photon X-ray absorption. / QC 20110426

Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

abstract: This thesis describes the design of a Single Event Transient (SET) duration measurement test-structure on the Global Foundries (previously IBM) 32-nm silicon-on insulator (SOI) process. The test structure is designed for portability and allows quick design and implementation on a new process node. Such a test structure is critical in analyzing the effects of radiation on complementary metal oxide semi-conductor (CMOS) circuits. The focus of this thesis is the change in pulse width during propagation of SET pulse and build a test structure to measure the duration of a SET pulse generated in real time. This test structure can estimate the SET pulse duration with 10ps resolution. It receives the input SET propagated through a SET capture structure made using a chain of combinational gates. The impact of propagation of the SET in a >200 deep collection structure is studied. A novel methodology of deploying Thick Gate TID structure is proposed and analyzed to build multi-stage chain of combinational gates. Upon using long chain of combinational gates, the most critical issue of pulse width broadening and shortening is analyzed across critical process corners. The impact of using regular standard cells on pulse width modification is compared with NMOS and/or PMOS skewed gates for the chain of combinational gates. A possible resolution to pulse width change is demonstrated using circuit and layout design of chain of inverters, two and three inputs NOR gates. The SET capture circuit is also tested in simulation by introducing a glitch signal that mimics an individual ion strike that could lead to perturbation in SET propagation. Design techniques and skewed gates are deployed to dampen the glitch that occurs under the effect of radiation. Simulation results, layout structures of SET capture circuit and chain of combinational gates are presented. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2017

Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

Neste trabalho foi medido o alargamento Doppler de uma aniquilação elétron pósitron com o uso de um filtro angular. O Filtro angular reduz, substancialmente, a detecção de fótons provenientes de aniquilações de elétrons com baixo momento, enfatizando, desta forma, a contribuição de aniquilações com elétrons fortemente ligados. Foram medidos os espectros de coincidência para os ângulos de corte de 0,28°, 0,42° e 1.2°. Os resultados obtidos mostram que, conforme se aumenta o ângulo de corte, há uma redução das aniquilações com elétrons de valência em proporção muito maior do que para elétrons fortemente ligados. Foi determinada a transmissibilidade do filtro em função do ângulo entre as direções de emissão dos gamas, levando em conta todos os elementos do arranjo experimental para cada ângulo crítico, assim como a distribuição espacial da atividade da fonte radioativa. Um modelo simples foi utilizado para estimar teoricamente a dependência da dispersão da energia em função do ângulo de corte. Este modelo permitiu calcular o alargamento Doppler da radiação de aniquilação elétron pósitron. Os resultados obtidos mostram um bom acordo com os dados experimentais. Geralmente, estudos de aniquilação de pósitrons com elétrons fortemente ligados dependem de uma modelagem detalhada do espectro de coincidência, ou da medida dos fótons provenientes da aniquilação em coincidência com elétrons Auger. O filtro angular, desenvolvido neste trabalho se coloca como uma boa alternativa a estes métodos. / This work reports the measurement of the Doppler broadening of the electron-positron annihilation radiation using an angular filter. The angular filter substantially reduces the number of detected gamma-rays from positron annihilation with low momentum electrons, therefore emphasizing the contribution of bound electron. Four coincidence measurements of the emitted gamma-rays were done with arrangements corresponding to critical angles of 0.28°, 0.42°, 1.2°. The obtained results show that the relative intensity of annihilation with valence electrons decreases as the critical angle increases. The filter transmissibility as a function of the angle between the two gamma-rays emission directions was determined taking into account all the elements of the experimental arrangement for every critical angle as well as the spatial distribution of the source activity. A simple model was used to theoretically estimate the dependence of the energy dispersion on the critical angle. The model allows us to calculate the Doppler broadening of the electron-positron annihilation radiation, and the obtained results show good agreement with the experimental data. Usually, the study of positrons annihilation with inner electrons requires good detectors\' energy resolution and depends on either sophisticated modeling and statistical analysis of the coincidence spectra or the measurement of the annihilation gamma-rays in coincidence with Auger electrons. The use of the angular filter developed in this work is a good alternative to those procedures.

We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) "phonon bottlenecking" was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered Ith by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the earner dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore this technique has been shown that the inhomogeneous broadening of the photoluminescence spectrum is not purely affected by just size and composition. We suggest that other processes such as state occupancy, In roughing, and exciton binding energies may account for the extra energy.

abstract: One strategic objective of the National Aeronautics and Space Administration (NASA) is to find life on distant worlds. Current and future missions either space telescopes or Earth-based observatories are frequently used to collect information through the detection of photons from exoplanet atmospheres. The primary challenge is to fully understand the nature of these exo-atmospheres. To this end, atmospheric modeling and sophisticated data analysis techniques are playing a key role in understanding the emission and transmission spectra of exoplanet atmospheres. Of critical importance to the interpretation of such data are the opacities (or absorption cross-sections) of key molecules and atoms. During my Doctor of Philosophy years, the central focus of my projects was assessing and leveraging these opacity data. I executed this task with three separate projects: 1) laboratory spectroscopic measurement of the infrared spectra of CH4 in H2 perturbing gas in order to extract pressure-broadening and pressure-shifts that are required to accurately model the chemical composition of exoplanet atmospheres; 2) computing the H2O opacity data using ab initio line list for pressure and temperature ranges of 10^-6–300 bar and 400–1500 K, and then utilizing these H2O data in radiative transfer models to generate transmission and emission exoplanetary spectra; and 3) assessing the impact of line positions in different H2O opacities on the interpretation of ground-based observational exoplanetary data through the cross-correlation technique. / Dissertation/Thesis / Doctoral Dissertation Chemistry 2019