There is seemingly a never-ending consumer demand for mobileterminals such as cellular phones and personal digitalassistants (PDAs). Each new generation of terminals comes withmore elaborate functions than in the previous generation. Thistrend results in a higher performance demand on the computerarchitecture that performs the required computations within theterminal. To satisfy the projected requirements on cominggenerations of mobile terminals, we propose an architecturethat when intelligently managed can provide the necessaryperformance at low power and energy consumption. Thisarchitecture, a chip-multiprocessor (CMP), thus amulti-processor implemented on a single chip, has incombination with adaptive scheduling strategies the potentialto efficiently fullfill future requirements. This licentiate thesis spans over several studies done onthe effectiveness of the adaptive CMP. In our studies, we haveshown that an adaptive CMP can satisfy the same performancerequirements as a comparable uni-processor, still consumingless power and energy. Furthermore, we have made an effort toaccurately model the workload behaviour of mobile terminals,which is of paramount importance when comparing candidatearchitectures. In the future, apart from proposing moreadaptive scheduling techniques, we expect to do more thoroughstudies on workload modeling as well as on the operating systeminfluence on the overall performance and power consumption.

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Advances in the interconnection technology have played a key role in the continued improvement of the integrated circuit (IC) density, performance and cost. Copper (Cu) metallization, dual damascenes processing and integration of copper with low dielectric constant material are key issues in the IC industries. Chemical mechanical planarization of copper (CuCMP) has emerged as an important process for the manufacturing of ICs. Usually, Cu-CMP process consists of several steps such as the removal of surface layer by mechanical action of the pad and the abrasive particles, the dissolution of the abraded particles in the CMP solution, and the protection of the recess areas. The CMP process occurs at the atomic level at the pad/slurry/wafer interface, and hence, slurries and polishing pads play critical role in its successful implementation. The slurry for the Cu-CMP contains chemical components to facilitate the oxidation and removal of excess Cu as well as passivation of the polished surface. During the process, these slurry chemicals also react with the pad. In the present study, investigations were carried out to understand the effect of hydrogen peroxide (H2O2) as an oxidant and benzotriazole (BTA) as an inhibitor on the CMP of Cu. Interaction of these slurry components on copper has been investigated using electrochemical studies, x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). In the presence of 0.1M glycine, Cu removal rate was found to be high in the solution containing 5% H2O2 at pH 2 because of the Cu-glycine complexation reaction. The dissolution rate of the Cu was found to increase due to the formation of highly soluble Cu-glycine complex in the presence of H2O2. Addition of 0.01M BTA in the solution containing 0.1M glycine and 5% H2O2 at pH 2 exhibited a reduction in the Cu removal rate due to the formation of Cu-BTA complex on the surface of the Cu further inhibiting the dissolution. XPS and SIMS investigations revealed the formation of such Cu-glycine complex, which help understand the mechanism of the Cu-oxidant-inhibitor interaction during polishing. Along with the slurry, pads used in the Cu-CMP process have direct influence an overall process. To overcome problems associated with the current pads, new application specific pad (ASP) have been developed in collaboration with PsiloQuest Inc. Using plasma enhanced chemical vapor deposition (PECVD) process; surface of such ASP pads were modified. Plasma treatment of a polymer surface results in the formation of various functional groups and radicals. Post plasma treatment such as chemical reduction or oxidation imparts a more uniform distribution of such functional groups on the surface of the polymer resulting in unique surface properties. The mechanical properties of such coated pad have been investigated using nanoindentation technique in collaboration with Dr. Vaidyanathan’s research group. The surface morphology and the chemistry of the ASP are studied using scanning electron microcopy (SEM), x-ray photoelectron spectroscopy (XPS), and fourier transform infrared spectroscopy (FTIR) to understand the formation of different chemical species on the surface. It is observed that the mechanical and the chemical properties of the pad top surface are a function of the PECVD coating time. Such PECVD treated pads are found to be hydrophilic and do not require being stored in aqueous medium during the not-in-use period. The metal removal rate using such surface modified polishing pad is found to increase linearly with the PECVD coating time. Overall, this thesis is an attempt to optimize the two most important parameters of the Cu-CMP process viz. slurry and pads for enhanced performance and ultimately reduce the cost of ownership (CoO).

Chemical-mechanical Planarization (CMP) has emerged as one of the fastest-growing processes in the semiconductor manufacturing industry, and it is expected to show equally explosive growth in the future (Braun, 2001). The development of CMP has been fueled by the introduction of copper interconnects in microelectronic devices. Other novel applications of CMP include the fabrications of microelectromechanical systems (MEMS), advanced displays, three dimensional systems, and so on (Evans, 2002). CMP is expected to play a key role in the next-generation micro- and nanofabrication technologies (Singh, et al., 2002). Despite the rapid increase in CMP applications, the fundamental understanding of the CMP process has been lacking, particularly the understanding of the wafer-slurry-pad interactions that occur during the CMP process. Novel applications of CMP are expected to expand to materials that are complex chemically and fragile mechanically. Thus, fundamental understanding and improvement of slurry design for CMP is the key to the development of sophisticated next-generation CMP processes. Slurry performance for CMP can be determined by several output parameters including removal rate, global planarity, surface topography, and surface defectivity. To achieve global planarity, it is essential to form a very thin passivating surface layer ( < 2 nm) that is subsequently removed by the mechanical component of the slurry (Kaufman et al., 1991) or by combined chemo-mechanical effects (Tamboli, 2000). Chemical additives like hydrogen peroxide (H2O2), potassium ferricyanide, and ferric chloride are added to slurries as oxidizers in order to form a desirable surface layer. Other chemical additives such as inhibitors (e.g. benzotriazole) and complexing agents (e.g. ammonia) are added to the copper slurry in order to modify the oxide layer. That the removal rate of the thin surface layer is greater at the highest regions of the wafer surface than at the lowest regions leads to surface planarity. In this study, various complexing agents and inhibitors are combined to form slurry chemistry for copper CMP processing in H2O2 based slurries at pH values ranging from 2 to 10. Two complexing agents (glycine and Ethylenediamine) and one inhibitor (3-amino-1, 2, 4-triazole) were selected as slurry constituents for detailed chemical synergistic effect study because they showed good materials removal and surface planarity performances. To understand the fundamental mechanisms involved in copper CMP process with the afore-mentioned slurry chemical formations, various techniques, such as electrochemical testing techniques (including potentiodynamic polarization and electrochemical impedance spectroscopy), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM), were applied. As a result, guidelines for optimized slurry chemical formulation were arrived at and the possible mechanisms of surface-chemical-abrasive interactions were determined. From applications point of view, this study serves as a guide for further investigations in pursuing highly effective slurry formulations for copper/low-k interconnect applications.

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Das chemisch-mechanische Planarisieren (CMP) in der Halbleiterindustrie ist ein Prozess mit sehr vielen Einflussgrößen, wobei das Polierergebnis unter anderem von den Eigenschaften der Wechselwirkungskomponenten Wafer, Poliersuspension und Polierpad abhängig ist. Bei der Entwicklung neuer Schaltkreisentwürfe werden die strukturellen Abhängigkeiten der Topografie nach dem CMP häufig im Verlauf von zeit- und kostenintensiven Lernzyklen aufgedeckt und angepasst. Um Dauer und Kosten für die Entwicklung neuer Schaltkreise zu reduzieren, sollte im Rahmen eines BMBF-Projektes ein umfassendes Gesamtmodell, welches den Polierprozess ausführlich beschreibt, entwickelt werden. Für die Umsetzung dieses Vorhabens ist ein umfassendes qualitatives und quantitatives Verständnis der mechanisch-hydrodynamischen und physikalisch-chemischen Mechanismen zu erarbeiten, welche den Materialabtrag und die Planarisierung beim CMP bestimmen. Ziel der vorliegenden Arbeit war es zum einen, mittels direkter Kraftmessung am AFM die Wechselwirkungskräfte zwischen den Festkörperoberflächen von Schleifpartikel und Wafer sowie zwischen den Schleifpartikeln untereinander in CMP-relevanten Flüssigkeiten und ihre Bedeutung für das CMP zu untersuchen. Um die Wechselwirkungskräfte am AFM bestimmen zu können, war zuvor die Entwicklung einer geeigneten Versuchsanordnung nötig. Zur Absicherung der Ergebnisse aus den Kraftmessungen wurde eine Methode erarbeitet, um die zwischenpartikulären Wechselwirkungen mittels rheologischer Untersuchungen indirekt bestimmen zu können. Des Weiteren fanden rheologische Messungen zur Untersuchung der Fließeigenschaften der Poliersuspensionen statt, wobei außerdem der Einfluss anwendungsrelevanter hydrodynamischer Kräfte auf die Stabilität der Poliersuspension zu überprüfen war. Als Poliersuspensionen kamen kommerziell verfügbare Slurries sowie eine Modellslurry zum Einsatz. Neben Systemen mit dispergierten Silica-Partikeln wurde auch eine Slurry mit Ceria-Partikeln als disperse Phase betrachtet. Die kontinuierliche Phase einer Poliersuspension ist ein Mehrkomponentensystem und enthält unterschiedlichste Additive. Untersucht wurde der Einfluss von pH-Wert und Elektrolytkonzentration auf die Wechselwirkungskräfte, das Fließverhalten sowie den Materialabtrag.

Today, Internet users encounter dark patterns every time they use the Internet, whether it is noticed by the user or goes unnoticed. In this essay, using the quantitative and qualitative methods survey and focus group, it is studied how young adults experience the dark pattern Privacy Zuckering in consent management platforms (CMP) on the Internet. The empirical data collected were analyzed using a thematic analysis and related to different approaches and theories in human-computer interaction (HCI) and interaction design. We have also studied what emotions, thoughts and behaviors consent management platforms, containing Privacy Zuckering, cause in young adults when shown and discussed on different interfaces. Young adults experience uncertainty about the technical aspects of the meaning of GDPR and the design of a CMP, as well as the handling of personal data on the Internet in relation to Privacy Zuckering. / Idag möter internetanvändare dark patterns (mörka mönster) varje gång de använder sig av Internet, vare sig det uppmärksammas av användaren eller går obemärkt förbi. I denna uppsats, med hjälp av de kvantitativa och kvalitativa metoderna enkätundersökning och fokusgrupp, undersöks hur unga vuxna upplever det mörka mönstret Privacy Zuckering (integritets-zuckering) i samtyckeshantering (CMP) på Internet. Den empirin som samlades in, analyserades med hjälp av en tematisk analys och relateras till olika ansatser och teorier inom människa-datorinteraktion (HCI) och interaktionsdesign. Vi har även undersökt vilka känslor, tankar och beteenden samtyckeshantering innehållandes integritets-zuckering framkallar när vi visat och diskuterat olika gränssnitt. Unga vuxna upplever en osäkerhet kring de tekniska aspekterna av GDPR och utformningen av ett CMP, samt hantering av personliga data på Internet i relation till integritets-zuckering.

Ce travail de thèse porte sur l’étude des mécanismes physico-chimiques mis en jeu lors du polissage mécano-chimique du Zerodur® (vitrocéramique) par un abrasif à base d’oxydes de cérium. Les défauts obtenus à l’issu du polissage ont été caractérisés en microscopie optique et par microscopie à force atomique (AFM). Il en ressort deux principales populations, à savoir des rayures de type « fines » (longitudinales et continues) causées par des débris de matière polie. La seconde est la typologie « rayure éclat » (fractures perpendiculaires au sens de la rayure) causées par des agglomérats d’abrasif. Des analyses en spectroscopie RX de l’abrasif montrent une augmentation du ratio Ce3+/Ce4+ après la phase de polissage, confirmant la part chimique du polissage du Zerodur®. Des analyses de potentiel zêta ont été menées sur ces mêmes abrasifs et montrent une évolution de la charge de surface des particules abrasives. Des observations AFM montrent que plus la part Ce4+ est importante et meilleure est la qualité finale de la surface polie. La surface polie a également été sondée en ToF-SIMS. Il en ressort la présence d’une couche enrichie en cérium de plusieurs dizaines de nanomètres, lieu de la réaction mécano-chimique de polissage. Plus précisément, cette réaction semble avoir lieu dans la phase vitreuse du Zerodur®. / This PhD work focuses on the study of the physicochemical mechanisms involved in the chemical-mechanical polishing of Zerodur® (glass-ceramics) with an abrasive based on cerium oxides. The defects observed after polishing were characterized by optical microscopy and atomic force microscopy (AFM). Two main populations were observed, namely "fine" (longitudinal and continuous stripes) caused by debris of polished material. The second is called "scratch" (perpendicular fractures) caused by abrasive agglomerates. RX spectroscopic analyzes of the abrasive showed an increase in the Ce3+/ Ce4+ ratio after the polishing phase. This point confirms the chemical part of Zerodur® polishing. Zeta potential analyzes were carried out on these same abrasives and show an evolution of the abrasive surface charge. AFM observations show that the higher the Ce4+ concentration, the better the final polished surface quality. The polished surface was also probed with ToF-SIMS analyzes. This shows the presence of a cerium-enriched layer of several tens of nanometers, which may be a site for the chemical-mechanical polishing reaction. More precisely, this reaction seems to take place in the glassy phase of Zerodur®.