In the lower millimetre-wave frequency range, Substrate Integrated Waveguide (SIW) circuits have emerged as a reasonable compromise between rectangular waveguide and standard microstrip technologies. They are formed by a top- and bottom-metalized substrate and two arrays of plated or riveted holes (via holes) to replace the vertical metallic walls in conventional rectangular waveguide. Although many passive components known from traditional waveguide technology have been fabricated in SIW, one of the main challenges is to integrate active components with typical coaxial-type interfaces within the SIW environment. Therefore, the work presented in this dissertation focuses on new broadband transitions from SIW to other planar transmission-line technologies such as microstrip coplanar waveguide, coplanar strip line, slot line and coupled microstrips. Several of the new transitions are prototyped and experimentally verified. Two of these transitions are then used to integrate a low noise amplifier within SIW input and output ports. The measurements of fabricated SIW amplifier prototypes show very promising performance and clearly demonstrate successful integrations of active components within SIW. Finally, one of the new SIW-to-coplanar-waveguide transitions is employed as an interface to an SIW-based antenna, thus demonstrating the principle of connectivity of SIW to all currently used planar circuit technologies. / Graduate

ITC/USA 2010 Conference Proceedings / The Forty-Sixth Annual International Telemetering Conference and Technical Exhibition / October 25-28, 2010 / Town and Country Resort & Convention Center, San Diego, California / In this article we present a design of an L-band slot loop antenna with a dielectric loaded conductor backed coplanar waveguide (CBCPW) feed. The coplanar slot loop antenna has a transmission line resonator in series. We used full wave electromagnetic simulations with Ansoft's high frequency structure simulator (HFSS) software in the design of the coplanar slot loop antenna. The series transmission line resonator helps to tune the coplanar slot loop antenna and reduce its size. We present here results on return loss and radiations patterns of coplanar slot loop antenna obtained from HFSS simulations.

Approved for public release; distribution is unlimited / A general study of conductor backed coplanar waveguide is presented. The impedance (Z(0)) and effective dielectric constant (ɛ(reff)) of conductor-backed coplanar waveguide (CBCPW) have been calculated by using a variational method and the boundary point matching method. In this present work only the TEM dominant low frequency propagation mode of coplanar line has been considered. Experimental facilities are vector network analyzer (HP8409) and bench-instrument measurements. / http://archive.org/details/evaluationofcopl00jeon / Captain, Korean Air Force

With a rapid increase in information capacity of Internet access, high-speed, highly-efficiency, and cost-effectiveness laser source for optical fiber communication is required. High-speed 25Gb/s directly modulated laser is essential of this communication range, because of its simple structure, direct-modulation characteristics, low cost, and integration capability for wavelength division multiplexing (WDM) system, and moreover, it can achieved 100Gb/s data transmission by four channel module system. In this work, data modulation speed of 25Gb/s direct modulation DFB laser has been achieved. By employing high-speed coplanar waveguide structure with semi-insulating substrate, high-speed with f3dB > 20GHz has been demonstrated. By the electrical reflection measurement, it confirmed that the high-speed direction modulation can be realized through reduction of electrical parasitics. The laser chips is measured under continuous-wave mode at room temperature. In 1300nm and 1550nm wavelength device, slope efficiency obtained by taper fiber coupled of 0.045 and 0.07mW/mA respectively, output power up to 2.73 and 3.96mW/facet at 60mA. The Side Mode Suppression Ratio was greater than 35dB. 3dB bandwidth of greater than 16GHz and 20.5GHz, relaxation oscillation frequency of 12GHz and 16.6GHz. Finally, clearly back-to-back 25Gb/s eye diagram and error-floor-free performance were obtained.

In this paper,we used Finite-Difference Time-Domain Method to Analyze CPW and Antenna.In CPW ,we had to process excitiation source and ABC.Or we couldn`t get correct result.In antenna analysis,we used KSIR to calculate antenna pattern.

The current techniques and methodologies used in the field of material characterization are well documented and widely accepted as reliable and accurate. However, literature describing these techniques focuses on the algorithms used during material characterization; few studies have reposted on the design of, and the selection criteria for, the test fixtures themselves. This research focuses on the measurement cell with the goal of determining the sensitivity of the measurement cell to the addition of a thin film material. Microstrip and coplanar waveguide were chosen for the analysis, which included three configurations of each transmission line geometry: a reference with no additional thin film material, one with the thin film on top of the conductors and one with the thin film beneath the conductors but on top of the transmission line substrate. The scattering parameters for the reference cell are compared to the scattering parameters of the test cell with the thin film material. The additional thin film material changes the effective dielectric constant of the reference cell; this change is evident in the phase and amplitude of S21. The optimum measurement cell is the one that experiences the greatest change to the effective dielectric constant with the addition of the thin film. Thus the greatest difference in S21 between the reference cell and the test cell is indicative of the reference cell's sensitivity. The figure of merit (FOM) to determine the structure's sensitivity is the integration over frequency of the magnitude of the vector difference of S21. The analysis shows that the double-layered CPW measurement cell was the most sensitive. Once the optimum structure was determined an analysis of the sensitivity of the FOM to changes in the physical and electrical properties of the reference structure was conducted. The most important factors in the selection of the reference cell as evident by the FOM's sensitivity are the substrate to thin film dielectric constant ratio and the CPW conductor aspect ratio to the thin film thickness. In particular, thinner films require a smaller conductor gap while wider gaps are preferable for thicker films. Measurement of four different CPW geometries, each covered in a 300 micron Polydimethylsiloxane thick film, validate the analysis process. The measurement cells differ in the conductor aspect ratio. The values of the measured FOMs trend as predicted by the simulation analysis.

This work presents the development of an in-plane vertical micro-coaxial probe using bulk micromachining technique for high frequency material characterization. The coaxial probe was fabricated in a silicon substrate by standard photolithography and a deep reactive ion etching (DRIE) technique. The through-hole structure in the form of a coaxial probe was etched and metalized with a diluted silver paste. A co-planar waveguide configuration was integrated with the design to characterize the probe. The electrical and RF characteristics of the coaxial probe were determined by simulating the probe design in Ansoft’s High Frequency Structure Simulator (HFSS). The reflection coefficient and transducer gain performance of the probe was measured up to 65 GHz using a vector network analyzer (VNA). The probe demonstrated excellent results over a wide frequency band, indicating its ability to integrate with millimeter wave packaging systems as well as characterize unknown materials at high frequencies. The probe was then placed in contact with 3 materials where their unknown permittivities were determined. To accomplish this, the coaxial probe was placed in contact with the material under test and electromagnetic waves were directed to the surface using the VNA, where its reflection coefficient was then determined over a wide frequency band from dc-to -65GHz. Next, the permittivity of each material was deduced from its measured reflection coefficients using a cross ratio invariance coding technique. The permittivity results obtained when measuring the reflection coefficient data were compared to simulated permittivity results and agreed well. These results validate the use of the micro-coaxial probe to characterize the permittivity of unknown materials at high frequencies up to 65GHz.

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No / In this paper, low profile planar Metamaterial-Inspired coplanar fed waveguide antenna is presented for WLAN and Ultra-Wideband applications. The antenna is based on a simple strip loaded to a rectangular patch and zigzag E-shape metamaterial-inspired unit cell. The idea behind the proposed antenna is to enable miniaturization effect. The proposed antenna can provide dual band operation, the first one is a Wi-Fi band at 2.45 GHz having impedance bandwidth of 150MHz, the second one is an ultra wide band extended from 4.2 GHz to 6.5 GHz. Two antennas are designed and fabricated with and without metamaterial-inspired loading. The simulated and measured results regarding Return loss (S11), Gain and Radiation pattern are discussed.

High performance RF/mixed signal systems require new interconnect strategies to combine high frequency (microwave/mm-wave) circuitry with silicon mixed-signal and baseband digital processing. In such systems, heterogeneous vertical integration, in which circuits in different technologies can be stacked on top of each other within the system architecture, can reduce the overall system size and power consumption. Chip stacking also enables optimally-performing heterogeneous systems, because each level of the stack can consist of components fabricated in their most suited device or substrate technology. Two novel approaches for the vertical interconnection of heterogeneous integrated systems are proposed in this work. These approaches are related to flip-chip bonding techniques used in Radio-Frequency (RF)/microwave integrated circuits. The first proposed approach involves an interlocking mechanical structure that supports flip-chip assembled Monolithic Microwave Integrated Circuits (MMICs). Photolithographically patterned thick-film SU-8 structures are applied to both the chip and the carrier such that the chip self-aligns into place and mates with the carrier. Gold bumps embedded within the structures electrically connect the chip pads to the carrier pads. This method is demonstrated through the assembly of a SiGe power amplifier MMIC onto a high resistivity silicon carrier. The second proposed approach involves vertical interconnects consisting of room temperature liquid-state metals. The fluid nature of the liquid bumps allows them to be robust in the presence of thermo-mechanical stresses, such as Coefficient of Thermal Expansion (CTE) mismatch between the interconnected chips. SU-8 structures are used to form a shaping mold on the bottom carrier that contains the liquid metal. Gold posts are electroplated on the top chip, then mated with the SU-8 mold, thereby making contact with the liquid metal to form the electrical continuity. For each of these proposed methods, design and fabrication considerations are discussed in detail. RF measurements on prototype structures up to Ka band are performed to verify the functionality of the proposed methods. Given the results of these proof-of-concept efforts, electrical characteristics of the materials used in these methods are determined, and recommendations are provided for future improvements and refinements to these two techniques. / Master of Science