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Transition metal dichalcogenides (TMDs) are crystalline layered materials that have significantly impacted the field of condensed matter physics. These materials were the first exfoliatable semiconductors to be discovered after the advent of graphene. The focus of this dissertation is utilizing multiple imaging and characterization techniques to improve and understand the impact of strain and lattice defects in these materials. These inclusions to the lattice, alter the semiconducting performance in controllable ways. A comprehensive study using scanning tunneling spectroscopy (STM), spectroscopy (STS), scanning transmission electron microscopy (STEM), and photoluminescence (PL) in this work will provide a breadth of ways to pinpoint and cross-examine the impact of these factors on these materials. In the first half of this work we focus on the control of lattice defects through two growth processes: chemical vapor transport (CVT) and self-flux. By fine tuning the growth procedure we are both able to determine the intrinsic defects of the material, their electronics, and consistently diminish their density. The second half uses an in-situ strain device to reversibly control and examine the effects of applied strain on transition metal dichalcogenide layers. Utilizing the scanning tunneling microscope to image the lattice, we characterize the change of lattice parameters and observe the formation of strain solitons within the lattice. Measuring these solitons directly we look at the dynamics of a special class of line defects, folds within the top layer of the material, that occur naturally as strain is relieved within the monolayer. With the available imaging techniques and theoretical models we uncover a host of properties of these materials that are only accessible within the high strain regime

The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.

The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.

Orientadores: Pascoal José Giglio Pagliuso, Oscar Ferreira de Lima / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-17T19:19:42Z (GMT). No. of bitstreams: 1 Garitezi_ThalesMacedo_M.pdf: 5487109 bytes, checksum: 11408acef0a6ff80a1788db976f23149 (MD5) Previous issue date: 2011 / Resumo: Os supercondutores à base de ferro e arsênico foram descobertos em 2008, primeiramente na forma de um óxido LaFeAsO1-xFx com uma temperatura crítica de 26 K, e poucos meses depois na forma do intermetálico livre de oxigênio Ba1-xKxFe2As2 com Tc = 41 K. Desde então, esses materiais despertaram grande interesse da comunidade cientíca em busca do entendimento da natureza microscópica e da origem da supercondutividade nesses compostos, e sua possível relação com a supercondutividade dos cupratos e dos férmions pesados, onde acreditase que mecanismo de pareamento seja através de flutuações magnéticas. Muitos acreditam que essa nova família de materiais se constituirá na segunda classe de supercondutores de alta temperatura crítica descoberta desde dos cupratos há 30 anos atrás. Por supostamente compartilharem o mesmo mecanismo de supercondutividade dos cupratos, há grande perspectiva de descoberta de compostos a base de Fe-As com altas Tc (apresentam no momento Tcs tão altas quanto 55 K). Além do mais, muitos compostos desta família estudados até então podem apresentar altas correntes críticas comparáveis com supercondutores convencionais utilizados em magnetos comerciais, o que revela o potencial desses materiais para aplicação em fios de transmissão supercondutores e magnetos de alto campo, em especial no caso dos compostos intermetálicos, por serem, a princípio, mais fáceis de se manipular e mais estáveis do que os óxidos cerâmicos. Inicialmente, monocristais da família dos compostos à base de FeAs intermetálicos (Ba1-xKx-Fe2As2, BaFe2-xCoxAs2, etc) foram sintetizados utilizando-se fluxo de Sn. Os monocristais crescido por esse método possuem em média excelentes dimensões (5 mm x 5 mm x 2 mm), mas os estudos mostraram que há uma significativa incorporação substitucional de Sn, o que altera as propriedades microscópicas dos compostos. Atualmente, monocristais dessa família são sintetizados com a técnica de auto-fluxo, que usa excesso de ferro e arsênico para o crescimento. Porém, os monocristais crescidos por esse método têm dimensões cerca de 10 vezes menores e este excesso de reagentes no fluxo que fazem parte do composto pode levar a um desbalanço na estequiometria do material, e isso pode alterar fortemente medidas que sondem propriedades microscópicas, como a simetria do estado supercondutor, por exemplo. Além do mais, o excesso de arsênico traz um perigo adicional para o crescedor. Portanto, é desejável a busca de métodos alternativos de crescimento desses materiais que possam gerar amostras de boa qualidade que permitam um estudo confiável de suas propriedades microscópicas. Nesta dissertação, é apresentado o processo de síntese e caracterização de monocristais da série BaFe2-xCoxAs2 crescida com a técnica de fluxo metálico com um fluxo alternativo, o In. Os cristais sintetizados por esta técnica tiveram suas propriedades macroscópicas, como resistividade elétrica DC (p), susceptibilidade magnética DC (x), calor específico à pressão constante (Cp) e difração de raios-X medidas, e delas foram extraídas as temperaturas de transição magnética e supercondutora, o que permitiu a construção do diagrama de fases temperatura versus composição para esta série. O diagrama obtido neste trabalho está de acordo com o diagrama publicado para amostras crescidas com auto-fluxo, atestando o sucesso do crescimento sistemático dessa série com o fluxo de índio sem prejuízo às suas propriedades macroscópicas. Medidas preliminares de NMR sugerem que as amostras crescidas por fluxo de In têm qualidade cristalina superior às das amostras crescidas por auto-fluxo / Abstract: Iron arsenide based superconductors were discovered in 2008, first in the oxide form in LaFeAs-O1-xFx, which had Tc = 26 K; and a few months later in the intermetallic form, in an oxygen-free compound, Ba1-xKxFe2As2, with a critical temperature of ~ 41 K. They are supposedly the second class of unconventional high temperature superconductors since the discover of Cu-based oxides almost 30 years ago. For being considered similar to the cuprates, and having Tcs as high as 55 K and critical currents of the order of those conventional superconductors used in commercial magnets, these materials have great potential to be used in transmission lines and high field magnetsm, specially in the intermetallic from, since they tend to be, presumably, more flexible and easier to manipulate and stabilize than an oxide ceramic. Furthermore, there is great interest in studying the microscopic nature and the origin of superconductivity in these materials and its relation with magnetism. As of today, single crystals of this family are synthesized mainly with the self-flux technique, which uses excess iron and arsenic in the growth. Yet, this excess of reagents needed to grow these impurity-free crystals can lead to an outbalance of the material's stoichiometry, and that can strongly alter the outcome of experiments which probe microscopic properties such as the symmetry of the superconductor state. Also, the excess of As in the growth is an extra danger for the grower. As such, search for alternative methods of synthesis of these materials is highly desirable. In this work, it's presented the synthesis method and characterization of the BaFe2-xCoxAs2 series grown from In flux. The macroscopic physcial properties such as DC resistivitity (p), DC magnetic susceptibility (x), specific heat at constant pressure (Cp) and X-ray powder diffraction were measured on the In-flux prepared single crystals. From our results, We extracted the magnetic and superconducting transition temperatures which allow us the construction of a temperature composition phase diagram for this series. The obtained phase diagram is in agreement with the diagram constructed using samples grown by the self-flux method, attesting the success of our systematic growth using the In flux without any effect in the macroscopic properties of the crystals. Furthermore, preliminary NMR experiments suggest that the In-grown crystals may be of higher quality than the self-flux grown single crystals / Mestrado / Supercondutividade / Mestre em Física

Cette thèse porte sur le développement des méthodes d'analyse structurale de la couche mince de GaP epitaxiées sur le substrat de silicium par l'épitaxie par jets moléculaires (MBE), basées sur la diffraction des rayons X (ORX) et combinées à des techniques complémentaires telles que la microscopie électronique en transmission (TEM), la microscopie à force atomique (AFM) et la microscopie à effet tunnel (STM). Le travail est centré sur la caractérisation quantitative de la densité des défauts cristallins comme les micro-macles et les domaines d'inversion présents dans la couche ainsi que l'évaluation de la qualité de surface et l'interface. L'objectif ultime est d'obtenir une plate-forme GaP/Si parfaitement cristallisée sans défaut, via l'optimisation des paramètres de croissance. Nous avons mis en place et utilisé deux méthodes de quantification des micro-macles par la diffraction des rayons X en condition de laboratoire : les figures de pôles pour la visualisation rapide et l'évaluation de la densité des micro-macles et les « rocking-curves » permettent une extraction précise de la faction volumique de domaine maclé. Les propriétés structurales de la plate-forme de GaP/Si ont été considérablement améliorées, après une procédure d'optimisation impliquant la température de croissance, une procédure de croissance alternée (MEE) et une séquence de croissance en deux étapes. Un échantillon quasiment sans micro-macles a été obtenu par le dépôt de 40 monocouches de GaP par MEE à 350 •c suivi d'une surcroissance de 40 nm de GaP par MBE continue, à 500 •c. La surface de l'échantillon est lisse avec une rugosité de 0.3 nm. L'évaluation des domaines d'inversion par la ORX a été effectuée sur les cartographies de l'espace réciproque centrées sur les réflexions GaP de type (OOL), en laboratoire et sur une ligne synchrotron. Les balayages « transverses » extrait à partir des cartographies de l'espace réciproque sont analysés via une méthode dite "Williamson-Hall like", afin d'obtenir la "mosaïcité" qui est reliée à la micro-désorientation des petits domaines cristallins et la longueur de corrélation latérale correspondant à ces petits domaines. La distance moyenne entre parois de domaines d'inversion et ensuite estimé à partir de cette mesure. En utilisant cette méthode d'analyse et les techniques microscopiques, une optimisation plus poussée a été effectuée sur la dose de Ga au stade initial de croissance, l'utilisation de couches de marqueur AIGaP et l'homoépitaxie d'une couche de silicium avant le GaP. Enfin, nous avons obtenu un échantillon ne présentant pas de signal de micro-macle détectable en conditions standard de laboratoire, et une très faible densité de domaine d'inversion. Nous avons aussi observé une interface de GaP/Si visiblement présentant des bi-marches atomiques très régulières, sur un échantillon avec une couche de silicium déposée avant la croissance du GaP. / This thesis deals with the development of structural analysis methods of the GaP thin layers heterogeneously grown on the Si substrate by Molecular Beam Epixay (MBE), based on X-ray diffraction (XRD) analyses, combined with complementary techniques such as transmission electron microscopy (TEM), atomic force microscopy techniques (AFM) and scanning tunneling microscope (STM). The main work is centered on the quantitative characterization of crystalline defect such as micro-twins and the anti-phase domains, and the evaluation of the surface and interface quality. The ultimate goal is to achieve a perfectly crystallized GaP/Si platform without any defect, through the optimization of the growth conditions. We have applied two micro-twin quantification methods using a XRD lab setup. Pole figure method for fast visualization and evaluation of micro-twin density and rocking curves integration for a more precise absolute quantification of the micro-twin volume fraction. The GaP/Si platform structural properties have been significantly improved, after an optimization procedure involving growth temperature, MEE (Migration Enhanced Epitaxy) growth procedure and a twostep growth sequence. GaP layers quasi-free of MTs are obtained, with a r.m.s. roughness of only 0.3 nm. The APD evaluation by XRD has been performed on reciprocal space maps (RSM) centered on the (OOL) GaP reciprocal space lattice point either in lab setup or on synchrotron. Analysis of the transverse scans extracted from such RSM through the "Willamson-Hall like" method permits obtaining the "mosaicity" that is related to the micro-orientation of the small crystalline domains in the GaP layer, and the lateral correlation length which is considered to be related to the mean distance between two APBs, provided that this distance is approximately homogenous and corresponding to the mean APD size, and the density of other defects are very weak so that their influence can be neglected. Using this analytical method and the microscopic techniques, further optimization has been carried out on Ga amount at the initial growth stage, the use of AIGaP marker layers and the homoepitaxie of Si buffer layer. Finally, sample with none MT signal and very low density of APD has been achieved. Moreover, an abrupt GaP/Si interface displaying regular and double atomic steppes is observed on sample with a Si buffer layer prior to the GaP growth.

The CdTe family members (in particular CdZnTe) remain the substrate of choice for epitaxial growth of HgCdTe for use in high performance infrared (IR) detectors and focal plane arrays. This is the case despite advances in the use of alternate substrate technologies such as buffered GaAs and GaAs on Si; these technologies, to date, have not reproducibly demonstrated device performance comparable to the arrays made in HgCdTe grown on CdZnTe and CdTe. The quality of CdTe family materials has improved significantly over the past several years and so the quality and reproducibility of IR detectors has improved along with them. It is clear, however, that CdTe family substrates still have a significant impact on the performance of HgCdTe devices and that further research is required to reduce the effects of substrate on these devices. Unlike silicon or gallium arsenide, it is very difficult to grow the large area single crystals of CdZnTe due to thermodynamic limitations. It has the lowest thermal conductivity among all semiconductors that makes it difficult to obtain planar solid-liquid interface, which is desirable for the growth of large area single crystals of CdZnTe. Due to its high ionicity and weak bonding, defects are easily incorporated during the growth. Also, it is well established that both the structural defects and impurity content of Hg1-xCdxTe epitaxial layers are strongly influenced by the quality of the substrates used in the epitaxial growth process. A substrate of poor structural quality will result in a poor substrate/layer interface from which defects will propagate into the epilayer. It is known that our focal plane arrays (FPAs) are backside illuminated, with the device connected to underlying silicon multiplexer, using a matrix of indium bumps. Thus the substrate should have high IR transmission to pass the radiation on to the detector for collection. High IR transmission requires chemically and electrically homogeneous crystals free from extraneous second phase particles. This objective is one of the most difficult thermodynamic and technological problems in the growth of CdTe and related alloys. The bulk CdZnTe crystals grown from melt suffer from the inherent disadvantage of accommodating tellurium precipitates because of high growth temperature and phase diagram limitations. These tellurium (Te) precipitates condense as cadmium vacancies and Te interstitials during the cooling process, which contribute to intrinsic point defects. Although extensive efforts have been made in the area of purification of the CdZnTe crystals by using 6N pure starting materials, still the high temperature melt growth leads to impurity pickup during the crystal growth process. This deviation in the stoichiometry, especially due to free carriers, impurities and second phase tellurium precipitates, play the major role in reducing the infrared transmission through the CdZnTe substrate material. Also they affect the device performance when used for detector applications. In this context a thorough investigation of the non-stoichiometry of the CdZnTe material is mandatory to improve the material quality. It is my endeavor in this respect to present in this thesis “optical and structural investigations of defects in CdZnTe (Zn~4%) crystals”. The present thesis has been organized into six chapters. Chapter 1: It presents an up to date comprehensive review of the defects in CdTe binary and CdZnTe ternary compound semiconductors. It includes an introduction to the ternary II-VI cadmium zinc telluride with potential device applications. Issues related to CdTe based substrates for infrared (IR) applications have been discussed. Growth as well as several material aspects like crystal structure, band structure, mechanical, thermal, optical and dielectric properties have been discussed in details. The chapter ends with the motivation and scope for the present thesis. Chapter 2 : Te precipitates were identified and characterized in CdZnTe (Zn ~ 4%) crystals using various physical characterization techniques and the results are presented in Chapter 2. X-ray diffraction rocking curve measurements were carried out on a series of samples to assess the overall crystalline quality of the as grown CdZnTe crystals, in conjunction with Fourier transform infrared (FTIR) absorption spectroscopy measurements to identify the presence of Te precipitates. Further, the CdZnTe samples having Te precipitates were systematically characterized using micro-Raman imaging technique. CdZnTe wafers grown in three and six zone furnaces using quartz and/or pyrolytic boron nitride (PBN) crucibles have been subjected to micro-Raman imaging to quantify and understand the nature of Te precipitates. It is well known that for the normal phase of Te precipitates, the Raman modes appear centered around 121 (A1), 141(E) /TO (CdTe) cm -1and a weak mode around 92 (E) cm -1 in CdZnTe indicating the presence of trigonal lattice of Te. Using the micro-Raman maps and taking the spatial distribution of the area ratio of 121 to 141 cm-1 Raman modes, the size and distribution of Te precipitates were estimated. A substantial reduction in Te precipitate size and an improvement in the IR transmission in the 2.2 – 5 µm IR window was observed in the CdZnTe crystals subjected to post growth annealing under Cd+Zn vapors at 650 oC for 6 hrs. Also it is shown that the samples grown in pyrolytic boron nitride (PBN) crucibles have shown an overall improvement in the crystalline quality and reduction in the Te precipitate size as compared to the samples grown in quartz crucibles. The possible reasons for these observations have been discussed in chapter 2. The presence of Te precipitates under high pressure phase was detected by the blueshift of the Raman bands that appear at 121 (A1) cm-1for a normal Te phase, indicating that these micro-Raman maps are basically the distribution of Te precipitates in different phases. NIR microscopy imaging has been carried out to further substantiate the presence of Te precipitates under high pressure phase and that of larger Te precipitates. The significance of micro-Raman imaging lies in quantifying and demonstrating the high pressure phase of Te precipitates in CdZnTe crystals in a non-destructive way. Also it is shown that the presence of Te precipitates lead to loss of useful signal in the 2.2 – 6 µm wavelength regions and hence are “deleterious” for substrate applications of CdZnTe crystals required for the growth and fabrication of HgCdTe detectors. Chapter 3: The effects of annealing and hydrogenation on the low temperature photoluminescence (PL) spectra of CdZnTe (Zn ~ 4%) crystals are reported in this chapter. It is shown that annealing at 600 oC for 12 hrs under Cd vapors has resulted in the disappearance of both C-A and DAP recombination features (attributed to singly ionized cadmium vacancy acceptors) observed in the 1.5 – 1.6 eV band edge region in the low temperature PL spectra of CdZnTe, confirming the origination of these bands from Cd vacancy defects. The presence of copper impurity has been identified by the appearance of the 1.616 (AoX) eV energy peak attributed to exciton bound to the neutral copper acceptor and the 1.469 eV band attributed to copper acceptor in the donor acceptor pair (DAP) recombinations. It is shown that, only annealing under Cd+Zn vapors at 650 oC for 6 hrs has resulted in the passivation of the 1.469 eV band and the mechanism has been explained invoking the Hume-Rothery rule. Passivation of the 1.469 eV band is significant, since CdZnTe substrate copper contamination was found to degrade HgCdTe epitaxial layer and hence the performance of HgCdTe infrared (IR) detectors. Also it shown that vacuum annealing has resulted in the introduction of a new defect band around 0.85 eV in the low temperature PL spectra of CdZnTe possibly due to the loss of Cd and/or Zn. Further, the effects of hydrogenation in passivating the defect bands observed in the low temperature PL spectra of the control CdZnTe crystals are discussed. Using micro-Raman imaging technique, it is shown that hydrogenation has resulted in the reduction in size and restoration of normal phase for Te precipitates, which otherwise were present under high pressure phase in CdZnTe crystals. It is shown that the net effect of hydrogenation is to improve the quality of CdZnTe crystals at low temperature (50 oC) as compared to the high Cd+Zn annealing temperature (650 oC) whose effect is only to reduce the size of Te precipitates. To further substantiate this an analysis of the temperature dependent resonance micro-Raman spectra recorded with 633 and 488 nm lasers has been made and it is shown that appearance of the multiple orders (up to 4 orders) of the CdTe like LO phonon modes and emergence of the ZnTe like LO phonon mode are clear indications of the improved quality of the hydrogenated CdZnTe crystals. Chapter 4: Manifestation of Fe2+and Fe3+charge states of Fe in undoped CdZnTe (Zn ~ 4 %) crystals grown in quartz crucibles by asymmetrical Bridgemann method and their respective optical and magnetic behaviors have been discussed in this chapter. Fe2+being optically active shows absorption around 2295 cm-1in the low temperature (T = 3 K) FTIR spectra, while Fe3+being magnetically active exhibits coexistence of para and ferromagnetic phases, as identified by low temperature electron spin resonance and supported independently by low temperature SQUID and AC susceptibility measurements. In the paramagnetic phase (TC ~ 4.8 K) the inverse of ac susceptibility follows the Curie-Weiss law. In the ferromagnetic phase (TC ~ 4.8 K) the thermal evolution of magnetization follows the well known Bloch’s T3/2 law. This is further supported by the appearance of hysteresis in the SQUID measurements at 2K below TC. Small coercive field of 10 Oe as estimated in the hysteresis suggests that the magnetic anisotropy is very small in these systems. Chapter 5: In this chapter, details of the indigenously developed laser beam induced current (LBIC) instrumentation have been presented. These include instrumental arrangement of the micro-mechanical system for raster scanning of defects in semicoductors and fabrication details of continuous flow liquid helium cryostat for low temperature LBIC measurements. Preliminary LBIC data recorded using this system have been shown to demonstrate the operability of the system. Chapter 6: This chapter includes a brief write-up summarizing the results and draws the attention for the possible future work. Appendix A: Here C++ programs for LBIC measurements are presented. Appendix B: Here the CAD diagrams for the full cross sectional view of the liquid helium cryostat consisting of “assembly liquid helium cryostat” and “part liquid helium cryostat” are attached.