In this report a model of a tunable narrow linewidth laser used for telecommunications is presented. The model uses both theoretical analysis and experimental data to create the mathematical models governing its behaviour and is aimed to be useful in a development environment with requirements on accuracy, efficient implementation and adaptability to future design. Results show that the model presented achieves high accuracy in both optical and electrical measurements. In summary the model could be useful in a development environment with further improvements in adaptability possible in the future.

Yes / This study was focused on developing a new catalyst using metal oxide (10 %Mn) over Nano- activated Carbon (Nano-AC) particles and designing a new reactor (digital basket reactor, DBR) for the sulfur removal from kerosene oil via oxidative desulfurization (ODS). The new homemade Nano-catalyst was prepared by utilizing impregnation process and was characterized by SEM, EDX, BET, and FTIR techniques. The performance of ODS process under moderate operating conditions was significantly enhanced by the application of the new catalyst and the new reactor. The results showed that 94 % of the sulfur could be achieved at oxidation temperature of 80 ºC, oxidation time of 35 min and agitation rate of 750 rpm. The reactivity of catalyst was examined after four consecutive ODS cycles under the optimal experimental parameters and the used catalyst showed excellent stability based on oxidation efficiency. The spent catalyst was treated by methanol, ethanol and iso-octane solvents for regenerated it, and the result proved that iso-octane carried out the maximum regeneration performance. An optimization method depending on minimizing the sum of the squared error among the experimental and model predicted data of ODS technology was employed to evaluate the optimal kinetic model parameters of the reaction system. The ODS process model was able to predict the results obtained experimentally for a wide range of conditions very well by absolute average errors<5 %.

A sociedade atual está vivendo uma revolução baseada na informação. A recente explosão da popularidade da internet e desregulamentação dos setores públicos de telefonia em muitos países foram os principais responsáveis pelo aumento da demanda por largura de banda. Adicionalmente, houve um aumento no volume de tráfego em função do oferecimento de serviços multimídia de banda larga. Este cresimento rápido e global por demanda de largura de banda está acelerando o desenvolvimento e a implantação de redes de comunicações ópticas empregnando sistemas multiplexados em comprimento de onda (WDM). O emprego de fibras na transmissão de informações em alta velocidade a grandes distâncias já está consolidado, e sua utilização em redes metropolitanas MAN (Metropolitan Area Network) e redes de acesso está aumentando. Verifica-se que a tendência de evolução das redes ópticas é a aproximação das fibras até o usuário final. A forma mais viável economicamente de aproximar o usuário dos benefícios das redes ópticas com grande capacidade é o emprego de redes ópticas passivas PON (Passive Optical Network) empregando o sistema WDM. Este tipo de rede apresenta a flexibilidade de suportar tanto broadcast, onde o mesmo sinal é distribuído a todos os usuários, como serviços ponto-a-ponto. Um dos requisitos mais importantes para o aumento da capacidade destes sistemas ópticos é o aumento do número de canais (comprimentos de onda). Para viabilizar este aumento do número de canais é necessária a utilização de dispositivos com alta seletividade em comprimento de onda proposto neste trabalho. Este filtro é composto pela combinação de três estruturas distintas formando um único dispositivo: fibra tipo D, duplo refletor de Bragg (DBR), e guia multicamada em configuração ARROW ( Antiresonant Reflecting Optical Waveguide). O DBR é previamente definido na fibra tipo D e esta é então colada sobre a estrutura multicamada. ) A estrutura multicamada, por sua vez, possui a configuração ARROW em virtude de suas características de seletividade em comprimento de onda. A utilização de um fibra tipo D no dispositivo proposto permite que as perdas de inserção deste dispositivo no enlace óptico sejam drasticamente reduzidas. Este trabalho realiza um projeto criterioso de um filtro em questão, buscando valores ótimos para cada um dos parâmetros que compõem este dispositivo, tais como: espessuras de camadas, índices de refração, perda de inserção, isolação entre canais, etc. Os resultados obtidos com as simulações são discutidos e uma configuração ótima para o dispositivo é proposta. / The progress in lightwave propagation based on optical fibers has provided our society with an unprecedented communication capability. The deregulation of public telephone companies together with the increasingly popularity of the internet can be pointed out as the major contributors for this huge bandwidth demand we experience today. Additionally, there was a corresponding growth in traffic volume due to wideband multimedia services. As a consequence of this fast growing demand for bandwidth in a global scale, telecom companies have accelerated the development and implementation of optical communication networks based on wavelength division multiplexing (WDM) technology. The tendency in terms of network evolution is to approximate the optical fibers as close as possible to the end user. The most economically viable way of doing so is by way of the so called Passive Optical Networks (PON) based on WDM systems. This type of network is flexible enough to support broadcast, where the same signal is distributed to all users, and point-to-point services. If more capacity is required for these systems, this can be achieved just by adding new channels (wavelengths) to it. Another important issue regarding WDM systems consists in the extraction of channels from the optical network, which can be achieved by using highly selective dropping filters such as the one proposed in this work. This filter is defined by the combination of three distinct structures defining one single device: a d-type fiber, a double Bragg reflector (DBR), and a multilayer ARROW type waveguide (Antiresonant Reflecting Optical Waveguide). The DBR is defined beforehand on the d-fiber, and then the d-fiber is literally glued on top of the multilayer waveguide. This multilayer waveguide is fabricated directly atop of a p-i-n photodetector in such a way that the three structures (d-fiber, multilayer waveguide and photodetector) now form a rigid structure. The ARROW type configuration for the multilayer waveguide and the DBR structure are chosen by virtue of their wavelength selectivity characteristics, helping to improve the device performance. The d-fiber structure, by its tum, has the great advantage of reducing drastically the insertion loss when compared to rectangular waveguide filters. In the analysis provided in this work parameters such as layer thicknesses, refractive indices, insertion loss, channel isolation, etc, and their influence on the device performance, are extensively investigated for optimization purposes. The simulated results are discussed thoroughly and an optimal structure configuration is proposed.

A sociedade atual está vivendo uma revolução baseada na informação. A recente explosão da popularidade da internet e desregulamentação dos setores públicos de telefonia em muitos países foram os principais responsáveis pelo aumento da demanda por largura de banda. Adicionalmente, houve um aumento no volume de tráfego em função do oferecimento de serviços multimídia de banda larga. Este cresimento rápido e global por demanda de largura de banda está acelerando o desenvolvimento e a implantação de redes de comunicações ópticas empregnando sistemas multiplexados em comprimento de onda (WDM). O emprego de fibras na transmissão de informações em alta velocidade a grandes distâncias já está consolidado, e sua utilização em redes metropolitanas MAN (Metropolitan Area Network) e redes de acesso está aumentando. Verifica-se que a tendência de evolução das redes ópticas é a aproximação das fibras até o usuário final. A forma mais viável economicamente de aproximar o usuário dos benefícios das redes ópticas com grande capacidade é o emprego de redes ópticas passivas PON (Passive Optical Network) empregando o sistema WDM. Este tipo de rede apresenta a flexibilidade de suportar tanto broadcast, onde o mesmo sinal é distribuído a todos os usuários, como serviços ponto-a-ponto. Um dos requisitos mais importantes para o aumento da capacidade destes sistemas ópticos é o aumento do número de canais (comprimentos de onda). Para viabilizar este aumento do número de canais é necessária a utilização de dispositivos com alta seletividade em comprimento de onda proposto neste trabalho. Este filtro é composto pela combinação de três estruturas distintas formando um único dispositivo: fibra tipo D, duplo refletor de Bragg (DBR), e guia multicamada em configuração ARROW ( Antiresonant Reflecting Optical Waveguide). O DBR é previamente definido na fibra tipo D e esta é então colada sobre a estrutura multicamada. ) A estrutura multicamada, por sua vez, possui a configuração ARROW em virtude de suas características de seletividade em comprimento de onda. A utilização de um fibra tipo D no dispositivo proposto permite que as perdas de inserção deste dispositivo no enlace óptico sejam drasticamente reduzidas. Este trabalho realiza um projeto criterioso de um filtro em questão, buscando valores ótimos para cada um dos parâmetros que compõem este dispositivo, tais como: espessuras de camadas, índices de refração, perda de inserção, isolação entre canais, etc. Os resultados obtidos com as simulações são discutidos e uma configuração ótima para o dispositivo é proposta. / The progress in lightwave propagation based on optical fibers has provided our society with an unprecedented communication capability. The deregulation of public telephone companies together with the increasingly popularity of the internet can be pointed out as the major contributors for this huge bandwidth demand we experience today. Additionally, there was a corresponding growth in traffic volume due to wideband multimedia services. As a consequence of this fast growing demand for bandwidth in a global scale, telecom companies have accelerated the development and implementation of optical communication networks based on wavelength division multiplexing (WDM) technology. The tendency in terms of network evolution is to approximate the optical fibers as close as possible to the end user. The most economically viable way of doing so is by way of the so called Passive Optical Networks (PON) based on WDM systems. This type of network is flexible enough to support broadcast, where the same signal is distributed to all users, and point-to-point services. If more capacity is required for these systems, this can be achieved just by adding new channels (wavelengths) to it. Another important issue regarding WDM systems consists in the extraction of channels from the optical network, which can be achieved by using highly selective dropping filters such as the one proposed in this work. This filter is defined by the combination of three distinct structures defining one single device: a d-type fiber, a double Bragg reflector (DBR), and a multilayer ARROW type waveguide (Antiresonant Reflecting Optical Waveguide). The DBR is defined beforehand on the d-fiber, and then the d-fiber is literally glued on top of the multilayer waveguide. This multilayer waveguide is fabricated directly atop of a p-i-n photodetector in such a way that the three structures (d-fiber, multilayer waveguide and photodetector) now form a rigid structure. The ARROW type configuration for the multilayer waveguide and the DBR structure are chosen by virtue of their wavelength selectivity characteristics, helping to improve the device performance. The d-fiber structure, by its tum, has the great advantage of reducing drastically the insertion loss when compared to rectangular waveguide filters. In the analysis provided in this work parameters such as layer thicknesses, refractive indices, insertion loss, channel isolation, etc, and their influence on the device performance, are extensively investigated for optimization purposes. The simulated results are discussed thoroughly and an optimal structure configuration is proposed.

In this project, the performance aspects of a new early generation 1310 nm Sampled-Grating Distributed Bragg Reflector (SG-DBR) semiconductor laser are investigated. SG-DBR lasers are ideal for Source Swept Optical Coherence Tomography (SS-OCT), a Fourier-Domain based approach for OCT, necessitating a tunable wavelength source. Three internal sections control the frequency output for tuning, along with two amplifiers for amplitude control. These O-band SG-DBR devices are now being produced in research quantities. SG-DBR lasers have been produced at 1550 and 1600 nm for some times. Fundamental questions regarding the performance of the 1310 nm devices must be quantified. Standard metrics including the laser linewidth, amplitude modulation and frequency modulation responses are characterized. The intrinsic electrical parasitics of the laser diode segments and packaging are also investigated. In addition, testing fixture including a Thermal Electric Cooler (TEC) controller is for the characterization task. Measurements of these key metrics are essential to the enhancement of future devices, aiding in the optimization of more mature products.

De acordo com Babu et al. (2015), o carvão mineral é um importante recurso natural devido à sua aplicação em várias atividades econômicas, como geração de energia, produção de aço, fabricação de cimento e produção de combustível líquido. Em função do custo e da baixa qualidade do carvão brasileiro (não coqueificável, na maioria das reservas, com elevado teor de cinzas e baixo poder calorífico), como apontado por Süffert (1997), as empresas brasileiras dos setores siderúrgico e termoelétrico necessitam importar este insumo, por via marítima. O desafio no planejamento da logística de suprimento desta matéria prima é garantir o abastecimento ao mínimo custo de estoque e de espera dos navios. A garantia de abastecimento passa por uma programação adequada da chegada e descarga dos navios. Quando a descarga de navios é uma operação gargalo, é necessário maior cuidado com a programação de recebimento, de maneira com que não haja atrasos, que causem a falta de produto, nem em muita antecipação, que podem significar excessivos tempo de fila para recebimento do material por falta de área para estocagem. Com o objetivo de se programar adequadamente a chegada de navios, de forma a evitar filas muito grandes e desabastecimento foi proposto um modelo de programação de chegada de navios, com base nos dados do complexo de Pecém. Este modelo proposto utilizou um buffer de tempo pré-determinado, que foi testado e validado através de simulação, com objetivo de minimizar os atrasos, de forma que possam ser absorvidos por um estoque de segurança, e as antecipações, de forma que não haja risco de falta de área de estocagem. / According to Babu et al. (2015), coal is an important natural resource due to its application in various economic activities, such as power generation, steel production, cement manufacturing and liquid fuel production. Due to the cost and low quality of Brazilian coal (not coking, in most reserves, with high ash content and low calorific value), as pointed out by Süffert (1997), Brazilian companies in the steel and thermoelectric sectors need to import this input, by sea. The challenge in planning the logistics of supply of this raw material is to guarantee the supply at the minimum cost of inventory and waiting of the ships. The supply guarantee is subject to adequate scheduling of arrival and unloading of ships. When ship unloading is a bottleneck operation, greater care is required with the scheduling of receipt, so that there are no delays, which cause the lack of product, or in much anticipation, that can mean excessive queue time for receiving the shipment material for lack of storage area. In order to properly program, the arrival of ships, in order to avoid very large queues and shortage, a model for the arrival of ships was proposed, based on data from the Pecém complex. This proposed model used a pre-determined time buffer, which was tested and validated through simulation, in order to minimize the delays, so that they can be absorved by a security stock, and the anticipations, so that there is no risk lack of storage area.

Vertical-cavity surface-emitting lasers (VCSELs) areattractive as potential inexpensive high-performance emittersfor fibre-optical communication systems. Their surface-normalemission together with the small dimensions are beneficial forlow-cost fabrication since it allows on-wafer testing,simplified packaging and effective fibre-coupling. Forhigh-speed data transmission up to hundreds of metres, 850-nmVCSELs are today the technology of choice. For higher bandwidthand longer distance networks, emission at long-wavelength(1.3-1.55 µm) is required. Long-wavelength VCSELs are,however, not available since no materials system offershigh-index-contrast distributed Bragg reflectors (DBRs) as wellas high-gain active regions at such wavelengths.High-performance DBRs may be built up from AlGaAs/GaAsmultilayers, but long wavelength quantum wells (QWs) are onlywell established in the InP system. Therefore, the bestperforming devices have relied on wafer-fusion betweenInP-based QWs and AlGaAs-DBRs. More recently, however, the mainefforts have been shifted towards all-epitaxial GaAs-baseddevices, employing 1.3-µm GaInNAs QWs. In this thesis, different processing technologies forlong-wavelength VCSELs are described. This includes a thoroughinvestigation of wafer-fusion between InP and GaAs regardingelectro-optical as well as metallurgical properties, and thedevelopment of a stable low-pressure process for the selectiveoxidation of AlAs. Optimised AlGaAs/GaAs DBRs were designed andfabricated. An important and striking observation from thatstudy is that n-type doping potentially is much moredetrimental to device performance than previously anticipated.These investigations were exploited in the realisation of twonew VCSEL designs. Near-room-temperature continuous-waveoperation of a single-fused 1.55-µm VCSEL was obtained.This demonstrated the potential of InGaAsP/InP DBRs inhigh-performance VCSELs, but also revealed a high sensitivityto self-heating. Further efforts were therefore directedtowards all-epitaxial GaAs-based structures. This resulted in ahigh-performance 1215-nm VCSEL with a highly strained InGaAssingle QW. This can be viewed as a basis for longer-wavelengthVCSELs, i.e., with an emission wavelength approaching 1300 nm,either by an extensive device detuning or with GaInNAs QWs. <b>Keywords</b>: VCSEL, vertical cavity laser, semiconductorlaser, long-wavelength, DBR, oxidation, wafer fusion, InGaAs,semiconductor processing

Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. For high-speed data transmission overdistances up to a few hundred meters, VCLs (or arrays of VCLs)operating at 850 nm wavelength is today the technology ofchoice. While multimode fibers are successfully used in theseapplications, higher transmission bandwidth and longerdistances require single-mode fibres and longer wavelengths(1.3-1.55 µm). However, long-wavelength VCLs are as yetnot commercially available since no traditional materialssystem offers the required combination of bothhigh-index-contrast distributed Bragg reflectors (DBRs) andhigh-gain active regions. Earlier work on long-wavelength VCLshas therefore focused on hybrid techniques, such as waferfusion between InP-based QWs and AlGaAs DBRs, but more recentlythe main interest in this field has shifted towardsall-epitaxial GaAs-based devices employing novel 1.3-µmactive materials. Among these, strained GaInNAs/GaAs QWs aregenerally considered one of the most promising approaches andhave received a great deal of interest. The aim of this thesis is to investigate monolithicGaAs-based long-wavelength (&gt;1.2 µm) VCLs with InGaAsor GaInNAs QW active regions. Laser structures - or partsthereof - have been grown by metal-organic vapor phase epitaxy(MOVPE) and characterized by various techniques, such ashigh-resolution x-ray diffraction (XRD), photoluminescence(PL), atomic force microscopy, and secondary ion massspectroscopy (SIMS). High accuracy reflectance measurementsrevealed that n-type doping is much more detrimental to theperformance of AlGaAs DBRs than previously anticipated. Asystematic investigation was also made of the deleteriouseffects of buried Al-containing layers, such as AlGaAs DBRs, onthe optical and structural properties of subsequently grownGaInNAs QWs. Both these problems, with their potential bearingon VCL fabrication, are reduced by lowering the DBR growthtemperature. Record-long emission wavelength InGaAs VCLs were fabricatedusing an extensive gain-cavity detuning. The cavity resonancecondition just below 1270 nm wavelength occurs at the farlong-wavelength side of the gain curve. Still, the gain is highenough to yield threshold currents in the low mA-regime and amaximum output power exceeding 1 mW, depending on devicediameter. Direct modulation experiments were performed on1260-nm devices at 10 Gb/s in a back-to-back configuration withopen, symmetric eye diagrams, indicating their potential foruse in high-speed transmission applications. These devices arein compliance with the wavelength requirements of emerging10-Gb/s Ethernet and SONET OC-192 standards and may turn out tobe a viable alternative to GaInNAs VCLs. <b>Keywords:</b>GaInNAs, InGaAs, quantum wells, MOVPE, MOCVD,vertical cavity laser, VCSEL, long-wavelength, epitaxy, XRD,DBR

<p>Vertical-cavity surface-emitting lasers (VCSELs) areattractive as potential inexpensive high-performance emittersfor fibre-optical communication systems. Their surface-normalemission together with the small dimensions are beneficial forlow-cost fabrication since it allows on-wafer testing,simplified packaging and effective fibre-coupling. Forhigh-speed data transmission up to hundreds of metres, 850-nmVCSELs are today the technology of choice. For higher bandwidthand longer distance networks, emission at long-wavelength(1.3-1.55 µm) is required. Long-wavelength VCSELs are,however, not available since no materials system offershigh-index-contrast distributed Bragg reflectors (DBRs) as wellas high-gain active regions at such wavelengths.High-performance DBRs may be built up from AlGaAs/GaAsmultilayers, but long wavelength quantum wells (QWs) are onlywell established in the InP system. Therefore, the bestperforming devices have relied on wafer-fusion betweenInP-based QWs and AlGaAs-DBRs. More recently, however, the mainefforts have been shifted towards all-epitaxial GaAs-baseddevices, employing 1.3-µm GaInNAs QWs.</p><p>In this thesis, different processing technologies forlong-wavelength VCSELs are described. This includes a thoroughinvestigation of wafer-fusion between InP and GaAs regardingelectro-optical as well as metallurgical properties, and thedevelopment of a stable low-pressure process for the selectiveoxidation of AlAs. Optimised AlGaAs/GaAs DBRs were designed andfabricated. An important and striking observation from thatstudy is that n-type doping potentially is much moredetrimental to device performance than previously anticipated.These investigations were exploited in the realisation of twonew VCSEL designs. Near-room-temperature continuous-waveoperation of a single-fused 1.55-µm VCSEL was obtained.This demonstrated the potential of InGaAsP/InP DBRs inhigh-performance VCSELs, but also revealed a high sensitivityto self-heating. Further efforts were therefore directedtowards all-epitaxial GaAs-based structures. This resulted in ahigh-performance 1215-nm VCSEL with a highly strained InGaAssingle QW. This can be viewed as a basis for longer-wavelengthVCSELs, i.e., with an emission wavelength approaching 1300 nm,either by an extensive device detuning or with GaInNAs QWs.</p><p><b>Keywords</b>: VCSEL, vertical cavity laser, semiconductorlaser, long-wavelength, DBR, oxidation, wafer fusion, InGaAs,semiconductor processing</p>

<p>Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. For high-speed data transmission overdistances up to a few hundred meters, VCLs (or arrays of VCLs)operating at 850 nm wavelength is today the technology ofchoice. While multimode fibers are successfully used in theseapplications, higher transmission bandwidth and longerdistances require single-mode fibres and longer wavelengths(1.3-1.55 µm). However, long-wavelength VCLs are as yetnot commercially available since no traditional materialssystem offers the required combination of bothhigh-index-contrast distributed Bragg reflectors (DBRs) andhigh-gain active regions. Earlier work on long-wavelength VCLshas therefore focused on hybrid techniques, such as waferfusion between InP-based QWs and AlGaAs DBRs, but more recentlythe main interest in this field has shifted towardsall-epitaxial GaAs-based devices employing novel 1.3-µmactive materials. Among these, strained GaInNAs/GaAs QWs aregenerally considered one of the most promising approaches andhave received a great deal of interest.</p><p>The aim of this thesis is to investigate monolithicGaAs-based long-wavelength (>1.2 µm) VCLs with InGaAsor GaInNAs QW active regions. Laser structures - or partsthereof - have been grown by metal-organic vapor phase epitaxy(MOVPE) and characterized by various techniques, such ashigh-resolution x-ray diffraction (XRD), photoluminescence(PL), atomic force microscopy, and secondary ion massspectroscopy (SIMS). High accuracy reflectance measurementsrevealed that n-type doping is much more detrimental to theperformance of AlGaAs DBRs than previously anticipated. Asystematic investigation was also made of the deleteriouseffects of buried Al-containing layers, such as AlGaAs DBRs, onthe optical and structural properties of subsequently grownGaInNAs QWs. Both these problems, with their potential bearingon VCL fabrication, are reduced by lowering the DBR growthtemperature.</p><p>Record-long emission wavelength InGaAs VCLs were fabricatedusing an extensive gain-cavity detuning. The cavity resonancecondition just below 1270 nm wavelength occurs at the farlong-wavelength side of the gain curve. Still, the gain is highenough to yield threshold currents in the low mA-regime and amaximum output power exceeding 1 mW, depending on devicediameter. Direct modulation experiments were performed on1260-nm devices at 10 Gb/s in a back-to-back configuration withopen, symmetric eye diagrams, indicating their potential foruse in high-speed transmission applications. These devices arein compliance with the wavelength requirements of emerging10-Gb/s Ethernet and SONET OC-192 standards and may turn out tobe a viable alternative to GaInNAs VCLs.</p><p><b>Keywords:</b>GaInNAs, InGaAs, quantum wells, MOVPE, MOCVD,vertical cavity laser, VCSEL, long-wavelength, epitaxy, XRD,DBR</p>