Novel photovoltaic cells receive considerable attention from researchers as evidenced by high numbers of published articles. Different types of materials are currently being examined in order to reduce the cost and improve the efficiency of solar cells. Essentially, solar cells are constructed by placing layers of light absorber between electron and hole transport materials. Electricity generation by solar cells involves multiple processes. These processes require an understanding of the physical properties of the surfaces and interfaces of the materials. In this thesis, materials for novel photovoltaic cells are studied by X ray photoelectron spectroscopy (XPS), a surface and interface characterisation technique. The materials studied in this thesis are colloidal quantum dots (CQDs) of the core/shell systems CdTe/CdSe and PbS/CdS, and CQDs that have been surface passivated using Cl- (CdTe/Cl) and CdS (CdTe/CdSe/CdS and PbS/CdS). Moreover, CsSnI3, a perovskite material, is also studied in both bulk and thin film form. CQDs can be used as light absorbers in solar cells while CsSnI3 can be employed as the hole transport material. The role of the core shell structure and surface passivation treatment is to improve or maintain charge transport as well as acting as a protective layer to the CQDs. Depth profiling synchrotron radiation XPS is used to determine these structures. In the CdTe/CdSe samples, the elemental ratio between Se (shell) and Te (core) increases with decreasing sampling depth, demonstrating the presence of a CdSe shell located at the surface of the CQDs. The shell thicknesses of the core-shell systems are estimated from XPS and show that the addition of the third thin shell (of CdS) protects the CQD during ligand exchange. Cl- passivation is shown to reduce the energy the valence band maximum and the energy gap of CdTe CQDs. This is associated with the passivation of midgap trap states due to the removal of dangling bonds at the surface of CQDs. Surface passivation is shown to improve the stability of CQDs to air exposure. This is indicated by a significant reduction of the surface oxide species in the passivated PbS/CdS samples. In the unpassivated core-only PbS samples, however, oxidation rapidly occurs which affects the electronic states required for charge transport in solar cells. XPS studies of CsSnI3 show that this material is reactive to air exposure. Surface preparation techniques are performed to remove the contamination layer and reveal the physical properties of the perovskite itself. This is confirmed by the elemental ratios from XPS. The metallic character of CsSnI3 is also observed in the valence band spectra as evidenced by the appearance of the Fermi edge.

In this work, Neutron Depth Profiling (NDP) analysis capability has been added to the Oregon State University TRIGA�� Reactor Prompt Gamma Neutron Activation Analysis Facility (PGNAA). This system has been implemented with an advanced digital spectroscopy system and is capable of rise time pulse shape analysis as well as coincidence measurements from multiple detectors. The digital spectroscopy system utilizes a high-speed multichannel digitizer with speeds up to 200 Megasamples/second (MS/s) with advanced hardware trigger and time stamping capabilities. These additions allow the facility to conduct simultaneous NDP and PGNAA combined measurements, which also enables cross calibration. The digital pulse processing is implemented with software programmed rise time pulse shape analysis capabilities for the analysis of the detector responses on a pulse-by-pulse basis to distinguish between different interactions in the detector. The advanced trigger capabilities of the digitizer were configured to accurately measure and correct for dead time effects from pulse pile up and preamplifier decay time. / Graduation date: 2013

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a powerful technique for the analysis of organic surfaces and interfaces for many innovative technologies. However, despite recent developments, there are still many issues and challenges hindering the robust, validated use of ToF-SIMS for quantitative measurement. These include: the lack of metrology and fundamental understanding for the use of novel cluster primary ion beams such as C60ⁿ⁺ and Ar₂₀₀₀⁺; the need for validated and robust measurement protocols for difficult samples, such as those with significant micron scale surface topography; the lack of guidance on novel data analysis methods including multivariate analysis which have the potential to simplify many time-consuming and intensive analyses in industry; and the need to establish best practice to improve the accuracy of measurements. This thesis describes research undertaken to address the above challenges. Sample topography and field effects were evaluated experimentally using model conducting and insulating fibres and compared with computer simulations to provide recommendation to diagnose and reduce the effects. Two popular multivariate methods, principal component analysis (PCA) and multivariate curve resolution (MCR), were explored using mixed organic systems consisting of a simple polymer blend and complex hair fibres treated with a multi-component formulation to evaluate different multivariate and data preprocessing methods for the optimal identification, localisation and quantification of the chemical components. Finally, cluster ion beams C60ⁿ⁺ and Ar_500-2500⁺ were evaluated on an inorganic surface and an organic delta layer reference material respectively to elucidate the fundamental metrology of cluster ion sputtering and pave the way for their use in organic depth profiling. These studies provide the essential metrological foundation to address frontier issues in surface and nanoanalysis and extend the measurement capabilities of ToF-SIMS.

L'objectif de cette thèse concerne l'association de deux techniques de mesure dans le cadre de la caractérisation in vivo de la peau. La première, nommée Spectroscopie de Réflectance Diffuse (DRS), permet la caractérisation des paramètres optiques de la peau analysée et quantifie les phénomènes d'absorption et de diffusion de la lumière. La deuxième est la microspectroscopie Raman. Elle fournit une identification chimique des composés analysés sans marquage. L'objet de cette thèse est d'évaluer l'effet de l'interaction lumière-matière sur les capacités de localisation et de quantification de la microspectroscopie Raman, lesquelles sont dégradées dans un milieu diffusant tel que la peau. Une approche in vivo bimodale (DRS et Raman) est proposée pour la caractérisation biochimique quantitative des tissus cutanés avec l'idée d'établir un protocole de correction des spectres Raman acquis, en exploitant les propriétés optiques fournies par la DRS. Elle est décomposée en trois axes de travail complémentaires : le développement d'une instrumentation DRS permettant la mesure des spectres de réflectance diffuse et le calcul des propriétés optiques dans la zone sondée par la spectroscopie Raman ; le développement de fantômes optiques permettant une compréhension expérimentale des phénomènes d'absorption, de diffusion élastique et de diffusion Raman; le développement d'un protocole de correction des spectres Raman à partir des propriétés optiques obtenues par DRS. / This thesis relates to the combination of two in vivo skin characterization techniques. On the one hand, Diffuse Reflectance Spectroscopy (DRS) enables skin optical properties characterization by quantifying light absorption and light elastic scattering. On the other hand, Raman microspectroscopy provides information on molecular compositions of tissues with no need of labeling. Localization and quantification functions of Raman microspectroscopy are both distorted in scattering media such as skin. Therefore, the aim of this thesis was to assess the effect of light-matter interactions on these functions. A bimodal method is proposed to achieve quantitative biochemical characterization of cutaneous tissues in vivo. The main idea is to develop a procedure of Raman spectra correction based on the quantified optical properties provided by DRS. This work was divided in three complementary approaches: the development of a system enabling diffuse reflectance and optical properties measurements in the same zone as Raman microspectroscopy; the fabrication of optical phantoms improving our knowledge on absorption, elastic scattering and Raman scattering phenomena; and the development of a Raman spectra correction model as function of the skin optical properties given by DRS measurements.

Les caoutchoucs, ou plus généralement, les polymères subissent de façon néfaste les agressions du milieu environnant au cours de leur utilisation. Deux facteurs sont connus comme étant parmi les plus importants impliqués lors du vieillissement : l’oxygène atmosphérique et les rayonnements UV-visibles solaire, conduisant au phénomène de photo-oxydation. Sachant que le vieillissement dans ce cas est régi par la pénétration de la lumière et la diffusion de l’oxygène, il y a au cours de l’irradiation formation d’une couche d’oxydation sur les premiers microns de la surface du matériau. L’objectif majeur de cette thèse est de mettre en évidence un lien entre l’évolution de la structure chimique et la perte des propriétés mécaniques dans le cadre de matériaux vulcanisés au cours du photo-vieillissement, en présence de charges telles que le dioxyde de titane et un colorant organique, au moyen d’une approche multi-techniques et multi-échelles.Afin d’y parvenir nous avons tout d’abord simplifié le matériau vulcanisé et nous nous sommes focalisés sur la matrice et les charges. Cette première étape nous a permis de déterminer l’influence des charges sur les mécanismes de photo-oxydation des caoutchoucs non vulcanisés, et nous a servi de base à la compréhension des matériaux vulcanisés plus complexes.Dans la deuxième étude, la caractérisation physico-chimique de la couche dégradée formée au cours de l’irradiation des composites vulcanisés a été effectuée. Nous avons par la suite confronté ces résultats avec la chute des propriétés mécaniques observée au cours du vieillissement. Nous avons ainsi mis en évidence une corrélation directe entre la structure chimique liée aux propriétés de la couche oxydée et la chute des propriétés mécaniques. / Rubbers or mostly polymers are exposed to different attacks from the surroundings during their uses. Two factors are known to be among the most important involved during aging: atmospheric oxygen and UV-visible radiation from the sun, leading to the phenomenon of photo-oxidation. Photo-ageing is governed by the light penetration and diffusion of oxygen, which involve the formation of an oxidative layer on the first microns at the surface of the material. The main objective of this thesis is to point out the relationship between the changes in the chemical structure due to the formation of the oxidative layer and the loss of mechanical properties during photo-aging of vulcanised rubber in the presence of fillers such as titanium dioxide and organic dye by means of a multi-techniques and multi-scale approach.To achieve this goal, we first simplified the vulcanized material and we focused only on the matrix and fillers. This first step allowed us to determine the influence of fillers on the mechanisms of photo-oxidation of unvulcanised rubber. This study helped to better understand more complex materials such as vulcanised rubbers. In the second study, we focused on the physic-chemical characterization of the degraded layer formed during irradiation of vulcanised rubber. After that, we compared the results with the loss of the mechanical properties observed during aging. This study highlighted a link between the changes of the chemical structure related to the properties of the oxidized layer and the loss of the mechanical properties.

Perovskite-based photovoltaic is one of the most promising classes of emerging solar cell technologies. This material class combines several advantageous properties, including low exciton binding energy, high charge carrier diffusion length and high optical absorption. Despite these excellent attributes, some challenges remain in perovskite research. Most notably the device stabilities and lifetimes need to be significantly improved in order to push this technology towards commercialization. Defect physics in perovskite photovoltaics has been shown to be a main factor in understanding long-term device instabilities. However, the number of measurement techniques that can track changes in the ionic landscape during device degradation is very limited, as the perovskite layer is buried under charge extraction layers and metallic contacts. In this thesis argon gas-cluster ion beam etching is combined with x-ray and ultraviolet photoelectron spectroscopy to achieve high resolution energetic and compositional depth profiles. In contrast to most layer-to-layer techniques this method can be applied after any operation time of the photovoltaic and therefore nicely investigate potential changes in the defect landscape. In the first part of this thesis, the impact of argon gas-cluster etching on the perovskite structure is investigated in order to identify potential damage that prevents this technique from being viable for perovskite materials. It is found that metallic lead is gradually created and a small preferential etching effect of the organic cations takes place during the depth profiling, but it is demonstrated that the major part of the crystal structure stays intact and that the energetics of the sample remains very stable. Moreover, it is demonstrated that fitting of the obtained ultraviolet photoelectron spectroscopy spectra leads to high resolution energetic and compositional depth profiles, which are suitable to identify potential loss mechanisms in full photovoltaic devices. In the second part, we investigate the increase in device performance of a perovskite photovoltaic during the first subsequent measurements under full illumination, which is a common example of a short-term instability. Ultraviolet photoelectron spectroscopy depth profiles reveal a strong band bending effect appearing after biasing the device which consequently leads to an increase in device open-circuit voltage. Density functional theory simulations link this band bending effect to the accumulation of iodine interstitials at the interface between the perovskite and the electron transport layer. In the final part, long-term degradation of perovskite photovoltaics is studied by investigating the impact of ionic additives on the perovskite active layer, which increases the lifetime of these devices significantly. It is found that most properties of the perovskite layer remain unaffected by the ionic additive, e.g. microstructure, energetic disorder and photoluminescence. Photoelectron spectroscopy depth profiling revealed an accumulation of iodine at the interface towards the electron transport layer, which is significantly reduced in additive-containing samples. Deep-level transient spectroscopy revealed a new mobile defect species in the ionic additive samples and at the same time a reduction of iodine diffusivity.

The CNO cycle consists of a set of nuclear reactions that convert hydrogen into helium and releases energy in stars. The cycle contributes less than 1% to our Sun's luminosity, but it is responsible for detectable neutrino fluxes that can bring direct information of the physical conditions in the solar core, provided that the nuclear reaction rate is known with sufficient precision. The 14N(p,γ)15O is the slowest reaction in the CNO cycle and estabilishes its rate. The experimental study has been performed both at the LUNA 400 kV accelerator deep underground in the Gran Sasso mountain in Italy and at a 3 MV Tandetron in the Helmholtz-Zentrum Dresden-Rossendorf. A proton beam was sent on solid TiN targets and the prompt photons were collected by a composite HPGe detector (at LUNA) or by up to four HPGe detectors (Dresden). The obtained results improve the fit of the excitation function in the R-matrix framework, that is used to extrapolate the S-factor at the very low astrophysical energies. In addition, the strength of two resonances at Ep = 430 and 897 keV of the 15N(p,αγ)12C reaction were measured, improving the precision for hydrogen depth profiling.

Glow Discharge Optical Emission Spectrometry (GD OES) has proved to be a versatile analytical technique for the direct analysis of solid samples. The application of a pulsed power supply to the glow discharge (GD) has a number of advantages in comparison with a continuous one and thereby broadens the analytical potential of the GD. However, because the pulsed GD (PGD) is a relatively new operation mode, the pulsing and plasma parameters as well as their influence on the analytical performance of the GD are not yet comprehensively studied. The aim of this dissertation consists in the investigation of the PGD features, which are crucial for both understanding the discharge plasma processes and analytical applications. The influence of the pulsing parameters on the PGD is ascertained and compared for direct current (dc) and radio frequency (rf) discharges. In the research attention is firstly paid on the electrical parameters of PGD, then on the sputtered crater shapes, sputtering rates and finally on the light emission. It is found that the sputtered crater shape is strongly affected by the duration of the applied pulses even when the duty cycle is fixed. The pulse length influences the intensity of the light emission as well (at constant duty cycle). Moreover this influence is different for emission lines of atoms and ions in the plasma. This phenomenon can be seen at the comparison of atomic and ionic lines of different elements. The voltage–current plots of the PGD are found to indicate heating of the discharge gas when operating at high duty cycles. Using this feature a new method for the estimation of the discharge gas temperature from the voltage-current characteristics of the PGD is developed. The calculated temperature values are compared with another temperature measurement technique. Different temperature estimation procedures have shown that the discharge gas temperature can be reduced by around 100 K when PGD is applied. The temperature measurements have also confirmed that the gas heating can be adjusted by variation of the pulsing parameters. The effect of sputtering on the Cu(In,Ga)Se2 (CIGSe) layer surface of the solar cells is described for the first time. SEM investigations of the CIGSe layer of the solar cells have shown that sputter induced effects can be reduced by variation of the pulsing parameters. With regard to the question whether dc and rf pulsed discharges behave similarly: nearly all phenomena found with dc discharges also appear in the rf case. Hence it is concluded that the pulsed rf and dc discharges are very similar in terms of the electrical properties, sputtered crater formation, light emission and temperature. It is concluded that matrix specific, as well as matrix independent quantification principles and the intensity correction developed by Arne Bengtson can be applied for the pulsed mode, if special conditions are fulfilled. CIGSe solar cell samples and thin layered electrode metallizations of SAW devices are measured and quantified with application of PGD. The proposed quantification procedures are performed at commercial GD OES devices and can be used for the analysis with application of pulsed rf discharge. The studies of the PGD performed in this dissertation are relevant for the application of the GD OES analysis in materials science. During the collaborative work with Helmholtz-Zentrum Berlin für Materialien und Energie and with the research group of Dr. Thomas Gemming at IFW Dresden the optimized pulsed GD OES measurements could be successfully applied at the investigation of thin film solar cells with CIGSe light absorbing layer and electrode matallizations of SAW devices. In case of solar cell samples pulsed GD OES depth profiling along with SIMS measurements reveal the role of the Al2O3 barrier layer in high efficiency solar cells consisting of a CIGSe/Mo/Al2O3/steel substrate layer stack (the barrier layer is to prevent the Fe diffusion into the CIGSe). The features of the CIGSe films growth are studied with help of pulsed GD OES and in situ synchrotron XRD measurements. The diffusion coefficient of Zn into the CuInS2 layer is determined for the first time from the measured GD OES depth profiles of the corresponding solar cell samples. In case of SAW samples, pulsed GD OES measurements helped to evaluate the different SAW electrode preparation procedures and to select the most suitable one. In addition pulsed GD OES depth profiling along with XPS, TEM-EDX and electrode lifetime measurements indicate the possible mechanism of power durability and lifetime improvement of the SAW devices when a small amount of Al is added to the Cu-based electrodes. / Die optische Glimmentladungsspektroskopie (engl. Glow Discharge Optical Emission Spectrometry - GD OES) hat sich als eine vielfältige und schnelle Methode für die direkte Analyse von festen Materialien erwiesen. Die Anwendung von gepulsten Glimmentladungen (GD) bietet eine Reihe von Vorteilen im Vergleich zu einer kontinuierlichen Entladung und erweitert dadurch das analytische Potential der Methode. Die praktische Anwendung von gepulsten GD erfordert jedoch ein tiefes Verständnis der Prozesse, die in der Entladung und im elektrischen System ablaufen. Der Einfluss der Puls- und Plasmaparameter auf die analytische Leistung der gepulsten GD ist bislang noch nicht umfassend erforscht worden. Die Zielstellung dieser Arbeit besteht in der Untersuchung der Eigenschaften der gepulsten GD, welche von besonderer Bedeutung sowohl für das Verständnis des Entladungsprozesses als auch für analytische Anwendungen ist. Die Auswirkungen der Pulsparameter auf die gepulste GD wurde für den Gleichstrom-(DC) und Hochfrequenz- (HF) Modus untersucht und verglichen. Die Reihenfolge der Untersuchungen wurde in dieser Arbeit wie folgt gewählt: elektrische Parameter, Sputterkraterformen, Sputterraten und Lichtemission. Die Form des Sputterkraters korreliert stark mit der Pulsdauer, selbst wenn das Tastverhältnis konstant ist. Die Pulsdauer beeinflusst nicht nur die Kraterform, sondern auch die Intensität der Emissionslinien (bei konstantem Tastverhältnis). Darüber hinaus ist dieser Einfluss unterschiedlich für Atome und Ionen. Dieses Verhalten wurde an mehreren Emissionslinien (atomar bzw. ionisch) nachgewiesen. Aus der Analyse der U-I-Kennlinien der gepulsten GD ergab sich, dass es zu einer Erhitzung des Plasmas bei höherem Tastverhältnis kommt. Dieser Effekt wurde zur Bestimmung der Plasma-Gastemperatur ausgenutzt. Die ermittelten Temperaturen wurden mit einer andere Methode verglichen. Aus der Abschätzung ergab sich, dass die Plasmatemperatur bei gepulsten GD um bis zu 100 K gesenkt werden und durch die Pulsparameter genauer eingestellt werden kann. Der Einfluss des Sputterns auf Cu(In,Ga)Se2 (CIGSe) Dünnschichten von Solarzellen wurde erstmals beschrieben. REM-Untersuchungen an GD-gesputterten CIGSe Schichten haben gezeigt, dass die Sputtereffekte durch die Variation der Pulsparameter reduziert werden können. Es konnte gezeigt werden, dass HF- und DC-Entladungen dieselben Effekte aufweisen und sich nur geringfügig voneinander unterscheiden. Daraus kann geschlussfolgert werden, dass DC- und HF-Entladungen in Bezug auf elektrische Eigenschaften, Kraterformen, Lichtemission und Temperatur sehr ähnlich sind. Die Quantifizierung der mit gepulsten GD gemessenen Tiefenprofile ergab ferner, dass die Anwendung der Quantifizierungsmethoden für den kontinuierlichen Modus unter den gegebenen Bedingungen zulässig ist. Die Tiefenprofile von Solarzellen-Schichten sowie SAW-Metallisierungen wurden anhand gepulster GD gemessen und quantifiziert. Die empfohlenen Quantifizierungsmethoden können mit kommerziellen GD OES-Geräten durchgeführt werden. Die Untersuchungen an gepulsten GD sind insbesondere relevant für GD OES-Anwendungen im Bereich der Werkstoffwissenschaft. Während der Zusammenarbeit mit dem Helmholtz-Zentrum Berlin für Materialien und Energie und der Arbeitsgruppe von Dr. Thomas Gemming (IFW Dresden) konnten optimierte, gepulste GD OES Messungen erfolgreich zur Untersuchung von Dünnschicht-Solarzellen bzw. hochleistungsbeständigen SAW-Metallisierungen angewendet werden. Für die Solarzellen haben GD OES und SIMS Messungen geholfen, die Rolle der Al2O3-Barriere in CIGSe/Mo/Al2O3 Schichtstapeln auf flexiblem Stahlsubstrat besser zu verstehen (Al2O3 soll die Diffusion der Fe-Atome in CIGSe verhindern). Die gemeinsame Untersuchung getemperter CIGSe-Schichten mit gepulster GD OES und in-situ Synchrotron-XRD ergab neue Erkenntnisse zum Schichtwachstum. Der Diffusionskoeffizient von Zn in CuInS2 wurde erstmals aus GD OES-Tiefenprofilen bestimmt. Im Fall der SAW-Metallisierungen konnte die GD OES zur Bestimmung des geeignetsten Herstellungsverfahrens einen wichtigen Beitrag leisten. Die gepulste GD OES hat neben anderen Untersuchungsmethoden wie TEM-EDX, XPS und Lebensdauermessungen die Verbesserung der Leistungsbeständigkeit von Cu-Metallisierungen durch geringen Al-Zusatz aufklären können.

Glow Discharge Optical Emission Spectrometry (GD OES) has proved to be a versatile analytical technique for the direct analysis of solid samples. The application of a pulsed power supply to the glow discharge (GD) has a number of advantages in comparison with a continuous one and thereby broadens the analytical potential of the GD. However, because the pulsed GD (PGD) is a relatively new operation mode, the pulsing and plasma parameters as well as their influence on the analytical performance of the GD are not yet comprehensively studied. The aim of this dissertation consists in the investigation of the PGD features, which are crucial for both understanding the discharge plasma processes and analytical applications. The influence of the pulsing parameters on the PGD is ascertained and compared for direct current (dc) and radio frequency (rf) discharges. In the research attention is firstly paid on the electrical parameters of PGD, then on the sputtered crater shapes, sputtering rates and finally on the light emission. It is found that the sputtered crater shape is strongly affected by the duration of the applied pulses even when the duty cycle is fixed. The pulse length influences the intensity of the light emission as well (at constant duty cycle). Moreover this influence is different for emission lines of atoms and ions in the plasma. This phenomenon can be seen at the comparison of atomic and ionic lines of different elements. The voltage–current plots of the PGD are found to indicate heating of the discharge gas when operating at high duty cycles. Using this feature a new method for the estimation of the discharge gas temperature from the voltage-current characteristics of the PGD is developed. The calculated temperature values are compared with another temperature measurement technique. Different temperature estimation procedures have shown that the discharge gas temperature can be reduced by around 100 K when PGD is applied. The temperature measurements have also confirmed that the gas heating can be adjusted by variation of the pulsing parameters. The effect of sputtering on the Cu(In,Ga)Se2 (CIGSe) layer surface of the solar cells is described for the first time. SEM investigations of the CIGSe layer of the solar cells have shown that sputter induced effects can be reduced by variation of the pulsing parameters. With regard to the question whether dc and rf pulsed discharges behave similarly: nearly all phenomena found with dc discharges also appear in the rf case. Hence it is concluded that the pulsed rf and dc discharges are very similar in terms of the electrical properties, sputtered crater formation, light emission and temperature. It is concluded that matrix specific, as well as matrix independent quantification principles and the intensity correction developed by Arne Bengtson can be applied for the pulsed mode, if special conditions are fulfilled. CIGSe solar cell samples and thin layered electrode metallizations of SAW devices are measured and quantified with application of PGD. The proposed quantification procedures are performed at commercial GD OES devices and can be used for the analysis with application of pulsed rf discharge. The studies of the PGD performed in this dissertation are relevant for the application of the GD OES analysis in materials science. During the collaborative work with Helmholtz-Zentrum Berlin für Materialien und Energie and with the research group of Dr. Thomas Gemming at IFW Dresden the optimized pulsed GD OES measurements could be successfully applied at the investigation of thin film solar cells with CIGSe light absorbing layer and electrode matallizations of SAW devices. In case of solar cell samples pulsed GD OES depth profiling along with SIMS measurements reveal the role of the Al2O3 barrier layer in high efficiency solar cells consisting of a CIGSe/Mo/Al2O3/steel substrate layer stack (the barrier layer is to prevent the Fe diffusion into the CIGSe). The features of the CIGSe films growth are studied with help of pulsed GD OES and in situ synchrotron XRD measurements. The diffusion coefficient of Zn into the CuInS2 layer is determined for the first time from the measured GD OES depth profiles of the corresponding solar cell samples. In case of SAW samples, pulsed GD OES measurements helped to evaluate the different SAW electrode preparation procedures and to select the most suitable one. In addition pulsed GD OES depth profiling along with XPS, TEM-EDX and electrode lifetime measurements indicate the possible mechanism of power durability and lifetime improvement of the SAW devices when a small amount of Al is added to the Cu-based electrodes. / Die optische Glimmentladungsspektroskopie (engl. Glow Discharge Optical Emission Spectrometry - GD OES) hat sich als eine vielfältige und schnelle Methode für die direkte Analyse von festen Materialien erwiesen. Die Anwendung von gepulsten Glimmentladungen (GD) bietet eine Reihe von Vorteilen im Vergleich zu einer kontinuierlichen Entladung und erweitert dadurch das analytische Potential der Methode. Die praktische Anwendung von gepulsten GD erfordert jedoch ein tiefes Verständnis der Prozesse, die in der Entladung und im elektrischen System ablaufen. Der Einfluss der Puls- und Plasmaparameter auf die analytische Leistung der gepulsten GD ist bislang noch nicht umfassend erforscht worden. Die Zielstellung dieser Arbeit besteht in der Untersuchung der Eigenschaften der gepulsten GD, welche von besonderer Bedeutung sowohl für das Verständnis des Entladungsprozesses als auch für analytische Anwendungen ist. Die Auswirkungen der Pulsparameter auf die gepulste GD wurde für den Gleichstrom-(DC) und Hochfrequenz- (HF) Modus untersucht und verglichen. Die Reihenfolge der Untersuchungen wurde in dieser Arbeit wie folgt gewählt: elektrische Parameter, Sputterkraterformen, Sputterraten und Lichtemission. Die Form des Sputterkraters korreliert stark mit der Pulsdauer, selbst wenn das Tastverhältnis konstant ist. Die Pulsdauer beeinflusst nicht nur die Kraterform, sondern auch die Intensität der Emissionslinien (bei konstantem Tastverhältnis). Darüber hinaus ist dieser Einfluss unterschiedlich für Atome und Ionen. Dieses Verhalten wurde an mehreren Emissionslinien (atomar bzw. ionisch) nachgewiesen. Aus der Analyse der U-I-Kennlinien der gepulsten GD ergab sich, dass es zu einer Erhitzung des Plasmas bei höherem Tastverhältnis kommt. Dieser Effekt wurde zur Bestimmung der Plasma-Gastemperatur ausgenutzt. Die ermittelten Temperaturen wurden mit einer andere Methode verglichen. Aus der Abschätzung ergab sich, dass die Plasmatemperatur bei gepulsten GD um bis zu 100 K gesenkt werden und durch die Pulsparameter genauer eingestellt werden kann. Der Einfluss des Sputterns auf Cu(In,Ga)Se2 (CIGSe) Dünnschichten von Solarzellen wurde erstmals beschrieben. REM-Untersuchungen an GD-gesputterten CIGSe Schichten haben gezeigt, dass die Sputtereffekte durch die Variation der Pulsparameter reduziert werden können. Es konnte gezeigt werden, dass HF- und DC-Entladungen dieselben Effekte aufweisen und sich nur geringfügig voneinander unterscheiden. Daraus kann geschlussfolgert werden, dass DC- und HF-Entladungen in Bezug auf elektrische Eigenschaften, Kraterformen, Lichtemission und Temperatur sehr ähnlich sind. Die Quantifizierung der mit gepulsten GD gemessenen Tiefenprofile ergab ferner, dass die Anwendung der Quantifizierungsmethoden für den kontinuierlichen Modus unter den gegebenen Bedingungen zulässig ist. Die Tiefenprofile von Solarzellen-Schichten sowie SAW-Metallisierungen wurden anhand gepulster GD gemessen und quantifiziert. Die empfohlenen Quantifizierungsmethoden können mit kommerziellen GD OES-Geräten durchgeführt werden. Die Untersuchungen an gepulsten GD sind insbesondere relevant für GD OES-Anwendungen im Bereich der Werkstoffwissenschaft. Während der Zusammenarbeit mit dem Helmholtz-Zentrum Berlin für Materialien und Energie und der Arbeitsgruppe von Dr. Thomas Gemming (IFW Dresden) konnten optimierte, gepulste GD OES Messungen erfolgreich zur Untersuchung von Dünnschicht-Solarzellen bzw. hochleistungsbeständigen SAW-Metallisierungen angewendet werden. Für die Solarzellen haben GD OES und SIMS Messungen geholfen, die Rolle der Al2O3-Barriere in CIGSe/Mo/Al2O3 Schichtstapeln auf flexiblem Stahlsubstrat besser zu verstehen (Al2O3 soll die Diffusion der Fe-Atome in CIGSe verhindern). Die gemeinsame Untersuchung getemperter CIGSe-Schichten mit gepulster GD OES und in-situ Synchrotron-XRD ergab neue Erkenntnisse zum Schichtwachstum. Der Diffusionskoeffizient von Zn in CuInS2 wurde erstmals aus GD OES-Tiefenprofilen bestimmt. Im Fall der SAW-Metallisierungen konnte die GD OES zur Bestimmung des geeignetsten Herstellungsverfahrens einen wichtigen Beitrag leisten. Die gepulste GD OES hat neben anderen Untersuchungsmethoden wie TEM-EDX, XPS und Lebensdauermessungen die Verbesserung der Leistungsbeständigkeit von Cu-Metallisierungen durch geringen Al-Zusatz aufklären können.

The CNO cycle consists of a set of nuclear reactions that convert hydrogen into helium and releases energy in stars. The cycle contributes less than 1% to our Sun's luminosity, but it is responsible for detectable neutrino fluxes that can bring direct information of the physical conditions in the solar core, provided that the nuclear reaction rate is known with sufficient precision. The 14N(p,γ)15O is the slowest reaction in the CNO cycle and estabilishes its rate. The experimental study has been performed both at the LUNA 400 kV accelerator deep underground in the Gran Sasso mountain in Italy and at a 3 MV Tandetron in the Helmholtz-Zentrum Dresden-Rossendorf. A proton beam was sent on solid TiN targets and the prompt photons were collected by a composite HPGe detector (at LUNA) or by up to four HPGe detectors (Dresden). The obtained results improve the fit of the excitation function in the R-matrix framework, that is used to extrapolate the S-factor at the very low astrophysical energies. In addition, the strength of two resonances at Ep = 430 and 897 keV of the 15N(p,αγ)12C reaction were measured, improving the precision for hydrogen depth profiling.