This thesis focuses on the polarization effects, that go on in the dielectric materials. It deals with physical and mathematical description of absorption effects. An important part of the thesis is a program environment, that is made by using programming language C++, which might be used for illustrative graphical displaying of physical laws of absorption effects in dielectric materials and for control of meters used for absorption current in dielectric materials measurement. This program can compute selected material constants from measured absorption currents. The proram enviroment enables creation of measurement protocol according to the norm ČSN IEC 93.

This doctoral thesis deals with the analysis of dielectric spectra of glycerol with dielectric relaxation spectroscopy (DRS). Dielectric spectra of glycerol have been measured in the frequency range 20 Hz to 10 MHz and in the temperature range 10 K to 300 K. The observed dielectric spectra featured a typical relaxation maximum, which could be in the first approximation described by the Arrhenius equation. The activation energy of the relaxation process observed was 90 MJ/kmol. The relaxation strength as well as the shape of the relaxation peak remained in the temperature interval 180 K - 230 K (visibility of peak) almost the same, thus indicating that no change of the relaxation mechanism comes about. Much attention was in the thesis paid to the analysis of the excess component of the relaxation alfa process, in the literature commonly denoted as "excess wing". The thesis puts forward a procedure for the quantification of the magnitude of the excess wing. The excess wing magnitude thus determined turns out to increase monotonously with increasing temperature. The excess wing is here interpreted as a manifestation of a weakly-pronounced beta relaxation.

Background: Bacterial contamination of surfaces with methicillin-resistant Staphylococcus aureus (MRSA) is a serious problem in the hospital environment and is responsible for significant nosocomial infections. The pathogenic contaminants form biofilms, which are difficult to treat with routine biocides. Thus, a continuous search for novel disinfection methods is essential for effective infection control measures. This demonstration of a novel technique for the control of virulent pathogens in planktonic form as well as in established biofilms may provide a progressive alternative to standard methodology. Methods: We evaluated a novel technique of normal atmospheric nonthermal plasma known as floating-electrode dielectric-barrier discharge (FE-DBD) plasma against a control of planktonic and biofilm forms of Escherichia coli, S aureus, multidrug-resistant methicillin-resistant S aureus (MRSA) -95 (clinical isolate), -USA300, and -USA400, using widely accepted techniques such as colony count assay, LIVE/DEAD BacLight Bacterial Viability assay, and XTT (2,3-Bis(2-methoxy-4-nitro-5-sulfophenyl)-2H-tetrazolium-5-carboxanilide) assay. Results: Exposure of free living planktonic forms of E coli, S aureus, and MRSA were rapidly inactivated by DBD plasma. Approximately 107 bacterial cells were completely (100%) killed, whereas 108 and 109 were reduced by approximately 90% to 95% and 40% to 45%, respectively, in less than 60 seconds (7.8 J/cm2) and completely disinfected in ≤120 seconds. In established biofilms, the susceptibility of MRSA USA400 was comparable with USA300 but less susceptible than MRSA95 (clinical isolate), S aureus, and E coli (P < .05) to FE-DBD plasma, and plasma was able to kill MRSA more than 60% within 15 seconds (1.95 J/cm2). The killing responses were plasma exposure-time dependent, and cell density dependent. The plasma was able disinfect surfaces in a less than 120 seconds. Conclusion: Application of DBD plasma can be a valuable decontamination technique for the removal of planktonic and biofilm-embedded bacteria such as MRSA -USA 300, -USA 400, methicillin-sensitive S aureus (MSSA), and E coli, the more common hospital contaminants. Of interest, E coli was more resistant than S aureus phenotypes.

A resonant microwave cavity technique was employed to study the dielectric behavior of some polar and non-polar liquids near the phase transition temperatures at microwave frequencies of 7.2, 9.2 and 10.1 GHz. The Slater perturbation equations for a resonant microwave cavity are briefly discussed to show that the above technique can be used to determine both the real and imaginary parts of dielectric response. Abrupt changes in dielectric response were observed near the phase transition temperatures for the polar liquids studied in this investigation. The dielectric relaxation phenomenon in liquids has been treated as a chemical rate process and the abrupt change in the dielectric response of the liquids near phase transition temperatures is shown to be related to the dramatic changes in the free energy of activation of the molecules. Some values of the free energy of activation were deduced for the various compounds from data obtained in this investigation.

This master‘s thesis deals with measurement of liquid dielectric materials (insulators). Above all, it is the different kinds of clean and drinking water, but also transformer oils. There was done theoretical information retrieval about the given topic in this project and on the basis of theory there were realized the relevant measurements of selected properties of liquid dielectric, such as permittivity, capacitance, loss number, conductivity, but also temperature dependence of these parameters. The measurements were realized with the help of product manufactured at the faculty FEKT VUT and with the help of measuring system AGILENT 16452A. The measured results were evaluated, graphically processed and compared.

The electrical properties of proteins in solution are important for their structure and function. Computational biophysics studies of proteins need accurate parameters to ensure that numerical simulations match physical reality. Past work in this eld has compared the electrical properties of proteins obtained from dielectric spectroscopy to numerical simulations of proteins in water with adjustment of pKa values to try to capture the inevitable changes in electrical conformation that will occur in a complex structure such as a folded protein. However, fundamental veri cation of the charge parameters of the amino acid building blocks in common molecular dynamics software packages with electrical experiments needs to be performed to have increased con dence in the results from numerical simulations. The aim of this thesis is to start from a fundamental building block, the single amino acid alanine, and to compare numerical simulations of this amino acid in water using parameters from commonly used charge structures in CHARMM, GROMOS, and OPLS, with electrical parameters obtained from dielectric spectroscopy experiments in the GHz range. To this end, multiple molecular dynamics simulations were performed to accurately determine how these different charge structures yield different dielectric increments. Additionally, a commercial RF dielectric measurement probe was modi ed to perform measurements on solutions containing alanine at different concentrations. Using regression, the dielectric increment of alanine is readily determined and compared with the numerical simulations. The results indicate that the CHARMM and OPLS parameters seem to adequately capture the charge con guration of alanine in solution, while the GROMOS parameters produce a dielectric increment but do not seem to adequately capture the charge con guration of alanine in solution. These studies lay the foundation for future studies of additional amino acids in solution as well as a stepping stone for larger simulations of the electrical properties of fully solvated proteins in solution.

There is great interest in the development of new polar dielectric ceramics and multiferroic materials with new and improved properties. A family of tetragonal tungsten bronze (TTB) relaxors of composition Ba₆M³⁺Nb₉O₃₀ (M³⁺ = Ga³⁺, Sc³⁺ and In³⁺, and also their solid solutions) were studied in an attempt to understand their dielectric properties to enable design of novel polar TTB materials. A combination of electrical measurements (dielectric and impedance spectroscopy) and powder diffraction (X-ray and neutron) studies as a function of temperature was employed for characterising the dynamic dipole response in these materials. The effect of B-site doping on fundamental dipolar relaxation parameters were investigated by independently fitting the dielectric permittivity to the Vogel-Fulcher (VF) model, and the dielectric loss to Universal Dielectric Response (UDR) and Arrhenius models. These studies showed an increase in the characteristic dipole freezing temperature (T[subscript(f)]) with increase B-cation radius. Crystallographic data indicated a corresponding maximum in tetragonal strain at T[subscript(f)], consistent with the slowing and eventual freezing of dipoles. In addition, the B1 crystallographic site was shown to be most active in terms of the dipolar response. A more in-depth analysis of the relaxor behaviour of these materials revealed that, with the stepwise increase in the ionic radius of the M³⁺ cation on the B-site within the Sc-In solid solution series, the Vogel-Fulcher curves (lnf vs. T[subscript(m)]) are displaced to higher temperatures, while the degree of relaxor behaviour (frequency dependence) increases. Unfortunately, additional features appear in the dielectric spectroscopy data, dramatically affecting the Vogel-Fulcher fitting parameters. A parametric study of the reproducibility of acquisition and analysis of dielectric data was therefore carried out. The applicability of the Vogel-Fulcher expression to fit dielectric permittivity data was investigated, from the simple unrestricted (“free”) fit to a wider range of imposed values for the VF relaxation parameters that fit with high accuracy the experimental data. The reproducibility of the dielectric data and the relaxation parameters obtained by VF fitting were shown to be highly sensitive to the thermal history of samples and also the conditions during dielectric data acquisition (i.e., heating/cooling rate). In contrast, UDR analysis of the dielectric loss data provided far more reproducible results, and to an extent was able to partially deconvolute the additional relaxation processes present in these materials. The exact nature of these additional relaxations is not yet fully understood. It was concluded application of the Vogel-Fulcher model should be undertaken with great care. The UDR model may represent a feasible alternative to the evaluation of fundamental relaxation parameters, and a step forward towards the understanding of the dielectric processes in tetragonal tungsten bronzes.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

Electrical and optical characterizations of heterostructures and thin films based on group III-V compound semiconductors are presented. Optical properties of GaMnN thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on GaN/Sapphire templates were investigated using IR reflection spectroscopy. Experimental reflection spectra were fitted using a non - linear fitting algorithm, and the high frequency dielectric constant (ε∞), optical phonon frequencies of E1(TO) and E1(LO), and their oscillator strengths (S) and broadening constants (Γ) were obtained for GaMnN thin films with different Mn fraction. The high frequency dielectric constant (ε∞) of InN thin films grown by the high pressure chemical vapor deposition (HPCVD) method was also investigated by IR reflection spectroscopy and the average was found to vary between 7.0 - 8.6. The mobility of free carriers in InN thin films was calculated using the damping constant of the plasma oscillator. The terahertz detection capability of n-type GaAs/AlGaAs Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures was demonstrated. A threshold frequency of 3.2 THz (93 µm) with a peak responsivity of 6.5 A/W at 7.1 THz was obtained using a 0.7 µm thick 1E18 cm−3 n - type doped GaAs emitter layer and a 1 µm thick undoped Al(0.04)Ga(0.96)As barrier layer. Using n - type doped GaAs emitter layers, the possibility of obtaining small workfunctions (∆) required for terahertz detectors has been successfully demonstrated. In addition, the possibility of using GaN (GaMnN) and InN materials for terahertz detection was investigated and a possible GaN base terahertz detector design is presented. The non - linear behavior of the Inter Pulse Time Intervals (IPTI) of neuron - like electric pulses triggered externally in a GaAs/InGaAs Multi Quantum Well (MQW) structure at low temperature (~10 K) was investigated. It was found that a grouping behavior of IPTIs exists at slow triggering pulse rates. Furthermore, the calculated correlation dimension reveals that the dimensionality of the system is higher than the average dimension found in most of the natural systems. Finally, an investigation of terahertz radiation efect on biological system is reported.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.