One of the major challenges in the field of organic semiconductors is to develop molecular design rules and processing routes which optimise the charge carrier mobility, whilst independently controlling the radiative and non-radiative processes. To date there has existed a seeming trade-off between charge carrier mobility and photoluminescence efficiency, which limits the development of some devices such as electrically pumped laser diodes. This thesis investigates fluorescence enhancement strategies for high-mobility polymer semiconductor systems and the mechanisms by which they currently display poor emission properties. Four independent approaches were taken and are detailed as follows. 1. Solubilising chain engineering It is shown that for the high mobility polymer poly(indacenodithiophene-co-benzothiadiazole), the addition of a phenyl- initiated side chain can enhance the solid-state fluorescence quantum yield, exciton lifetime and exciton diffusion length significantly in comparison to that without phenyl-addition. 2. Energy transfer to a highly fluorescent chromophore It is shown that for the high mobility polymer poly(indacenodithiophene-co-benzothiadiazole) efficient energy transfer to a more emissive squaraine dye molecule is possible despite fast non-radiative decay short exciton diffusion lengths. This results in a significant fluorescence enhancement, which in turn facilitates an order of magnitude increase of the efficiency of polymer light emitting diodes made from this material combination. 3. Energy gap engineering The well known Energy Gap Law predicts an increase in the non-radiative rate as the optical bandgap of an organic chromophore decreases in energy. In combination with this, almost all polymer semiconductors reported to date with high charge carrier mobility have low optical bandgaps. Therefore, molecular design principles which act to increase the optical bandgap of polymer semiconductors whilst retaining a high mobility were sought out. One specific system was successfully identified and showed a significant fluorescence enhancement compared to is predecessor poly(indacenodithiophene-co-benzothiadiazole) in both the solution and the solid state. It is found that the Frenkel exciton lifetime in this new system is a factor of four larger which also results in a significantly increased exciton diffusion length. An inter-chain electronic state is also identified and discussed. 4. Hydrogen substitution For some low-bandgap material systems such as erbium chromophores, high energy vibrational modes such as the C-H stretching mode can act as non-radiative pathways. The effect of hydrogen substitution with deuterium and fluorine was therefore investigated in a series of polythiophene derivative families. It was found that in the solid state, fluorescence and exciton lifetime enhancement occurred when the backbone hydrogen atoms were replaced with fluorine. However, evidence is given that this was not owing to the initial hypothesis, and is more likely owing to structural differences which occur in these substituted material systems.

O objetivo deste estudo foi avaliar o efeito da terapia fotodinâmica antimicrobiana (TFDa), utilizando laser de baixa potência, em duas densidades de energia, associado ao azul de toluidina em biofilme de S. mutans. Biofilmes de S. mutans UA159 foram crescidos por 5 dias em discos de resina acrílica (3 mm de diâmetro x 2 mm de altura) a 37&ordm;C 5 % de CO2;. Os espécimes foram divididos aleatoriamente em 4 grupos de tratamento (n=3): Digluconato de clorexidina 0,12% (CHX, controle positivo); Solução salina a 0,89% (NaCl, controle negativo); Terapia fotodinâmica antimicrobiana com azul de toluidina e laser de baixa potência (densidade de energia 320 J/cm&sup2;) (TFDa 320); Terapia fotodinâmica antimicrobiana com azul de toluidina e laser de baixa potência (densidade de energia 640 J/cm&sup2;) (TFDa 640). Os tratamentos foram realizados 2x/dia durante 3 dias. Ao final dos 5 dias, os biofilmes foram coletados e número de bactérias viáveis e a concentração de polissacarídeos extracelulares insolúveis (PECI) e intracelulares (PIC) foram determinadas e analisadas estatisticamente (ANOVA e teste de Tukey, p < 0,05). O tratamento com a TFDa (320 e 640 J/cm&sup2;) reduziu o número de bactérias viáveis em biofilmes de S. mutans, de uma maneira dose-dependente (p < 0,05). Além disso, a TFDa 640 J/cm&sup2;, reduziu a viabilidade bacteriana de forma tão eficaz quanto a CHX (p > 0,05). Em relação a PECI e PIC, os grupos TFDa (320 e 640 J/cm&sup2;) não foram significativamente diferentes de CHX (p > 0,05). Os resultados mostraram que a terapia fotodinâmica antimicrobiana, mediada pelo azul de toluidina e laser de diodo (640 J/cm&sup2;), pode ser uma abordagem utilizada no controle do biofilme dental cariogênico. / The aim of this study was to evaluate the effect of antimicrobial photodynamic therapy (aPDT), using low-power laser, with two energy densities, associated with toluidine blue in S. mutans biofilm. S. mutans UA159 biofilms were grown for 5 days on acrylic resin discs (3 mm diameter x 2 mm height) a 37&ordm;C, 5 % de CO2. The specimens were randomly divided into 4 treatment groups (n = 3): 0.12% chlorhexidine digluconate (CHX, positive control); 0,89% Saline (NaCl, negative control); Antimicrobial photodynamic therapy with toluidine blue and low power laser (energy density of 320 J/cm&sup2;) (aPDT 320); Antimicrobial photodynamic therapy with toluidine blue and low power laser (energy density of 640 J/cm&sup2;) (aPDT 640). Treatments were performed 2x/day for 3 days. At the end of 5 days, the biofilms were collected and the number of viable bacteria and the concentration of insoluble extracellular (IEPS) and intracellular polysaccharides (IPS) were determined and analyzed statistically (ANOVA and Tukey\'s test, p<0.05). Treatment with aPDT (320 and 640 J/cm&sup2;) reduced the number of viable bacteria of S. mutans biofilms in a dose-dependent manner (p<0.05). Furthermore, the aPDT 640 group reduced the bacterial viability as effectively as CHX group (p>0.05). For IEPS and IPS, the aPDT groups (320 and 640 J/cm&sup2;) were not significantly different CHX (p>0.05). The results showed that the antimicrobial photodynamic therapy mediated by toluidine blue and diode laser (640 J/cm&sup2;) may be an approach used to control the cariogenic dental biofilm.

Les composants actifs en électronique de puissance sont principalement à base de Silicium. Or, le silicium a des limites en termes de température d’utilisation, fréquence de commutation et de tenue en tension. Une alternative au Si peut être les semi-conducteurs à grand gap tels que le SiC-4H. Grâce aux travaux de plusieurs équipes de chercheurs dans le monde, les performances s’améliorent d’année en année. Le laboratoire AMPERE conçoit, réalise et caractérise des composants de puissance en SiC-4 H. Cette thèse s’inscrit dans les projets SiCHT2 et VHVD du laboratoire. Le travail réalisé au cours de cette thèse repose sur la conception la fabrication et la caractérisation électrique de composantes haute tension en SiC-4H. Les paramètres de protection pour la diode bipolaire 6500V sont optimisés à l’aide des simulations à base d'éléments finis. Les paramètres du SiC pour les modèles utilisés pour la simulation sont développés par des travaux précédents. Ensuite, le masque est dessiné. La diode est réalisée chez IBS. La première caractérisation est effectuée avant le recuit post-métallisation en directe et inverse sans passivation finale. Après le recuit post-métallisation la résistance de contact est plus faible. La caractérisation de la tenue en tension a été effectuée à AMPERE puis à l’ISL à très haute tension. A l’aide de simulations à base d'éléments finis, les paramètres tels que la résistance de contact et la durée de vie des porteurs ont été affinés à partir des caractérisations électriques obtenues par l’expérience. Les autres travaux portent sur la conception, les optimisations et les fabrications des diodes 10 kV et transistors 6500 V. / The power devices are mainly based on silicon. Silicon devices have limitations in terms of operating temperature, switching frequency and breakdown voltage. An alternative can be semiconductor wide band gap devices such as 4H-SiC. Through the work of several teams of researchers around the world, the performance of the power devices in 4H-SiC improve year by year. At ampere laboratory, design, fabrication and electrical tests of 4H-SiC devices are performed. The work done in this thesis is the design, fabrication and electrical characterization of 4H-SiC power devices with a high breakdown voltage. The parameters of the edge termination are optimized using simulations based on finite elements method. The parameters of 4H-SiC during the simulation are based on previous works. Then the mask is drawn. The diodes are manufactured by IBS. First the characterization in forward and reverse mode is done before the ohmic contact annealing. The diode passivation is a single SiO2 layer. After ohmic contact annealing, the contact resistance is lower. The characterization of the breakdown voltage is performed at AMPERE and at ISL for very high voltage. Parameters such as contact resistance and carrier lifetime are estimated by fitting measured electrical characteristics with results of finite element simulation. The design of the diodes 10 kV and bipolar junction transistor 6500 V is also part of this work. This work has been performed for 2 different projects VHVD with ANR for the financial support and SiCHT2 with DGCIS for the financial support.

O objetivo desta tese é o projeto e a síntese de filtros passa-faixa sintonizáveis em frequências de micro-ondas utilizando ressoadores planares tipo patch. As características dos filtros projetados, tais como frequência central, largura de banda e/ou seletividade, são eletronicamente ajustadas por uma tensão de controle DC. Uma metodologia para a concepção e síntese de filtros sintonizáveis patch é desenvolvida e aplicada a dois filtros com topologias triangular e circular. A metodologia fornece técnicas para extrair o esquema de acoplamento que modela o comportamento do filtro e as equações necessárias para calcular a matriz de acoplamento. Então, a resposta teórica do filtro resultante da análise dos coeficientes da matriz de acoplamento é comparada com os resultados das simulações completas. As simulações completas combinam os resultados da simulação eletromagnética 3D do layout do filtro com os resultados da simulação elétrica dos dispositivos de ajuste, representados por seu modelo elétrico equivalente de elementos discretos. Isso permite o correto modelamento das características do ajuste e a definição de seus limites. A fim de validar a metodologia, os filtros patch sintonizáveis são fabricados usando tecnologia de micro-ondas de circuito Integrado (MIC) sobre substratos flexíveis. As dimensões mínimas são maiores do que 0,5 mm, garantindo um processo de fabricação de baixo custo. O primeiro filtro é um filtro patch dual-mode sintonizável que utiliza um ressonador triangular com duas fendas perpendiculares. A frequência central e a largura de banda do filtro podem ser ajustadas individualmente por um controle independente de cada modo fundamental degenerado. O controle dos modos é feito através de diodos varactor montados nas fendas do ressoador patch. O filtro apresenta variação de 20 % de frequência central de 2,9 GHz a 3,5 GHz. A banda relativa de 3 dB varia de 4 % a 12 %. Duas tensões de polarização DC diferentes variando de 2,5 V a 22 V são usadas para ajustar este filtro. O segundo filtro é um filtro patch triple-mode sintonizável que utiliza um ressoador circular com quatro fendas radiais, nas quais são conectados os diodos varactor. A frequência central e a largura de banda deste filtro variam simultaneamente. O filtro apresenta 27 % de variação da frequência central de 1,8 GHz a 2,35 GHz com variação concomitante da largura de banda relativa de 8,5 % para 26 %. Apenas uma única tensão de polarização DC variando de 0,5 V a 20 V é usada para sintonizar este filtro. Ambos os filtros são capazes de lidar com níveis de potência de no mínimo +14,5 dBm (filtro com ressoador triangular) e +12,9 dBm (filtro com ressoador circular). / The objective of this thesis is the design and synthesis of tunable bandpass filters at microwave frequencies using planar patch resonators. The characteristics of the designed filters, such as center frequency, bandwidth, and/or selectivity, are electronically adjusted by a DC voltage control. A methodology for the design and synthesis of tunable patch filters is developed and applied to two filters with triangular and circular topologies. The methodology provides techniques to extract the coupling scheme that models the filter behavior and the necessary equations for calculating the corresponding coupling matrix. Then, the theoretical filter response resulting from the analysis of the coupling matrix coefficients is compared to the results of complete simulations. The complete simulations combine the results of the 3D electromagnetic (EM) simulation of the filter layout with the results of the electrical simulation of the tuning devices, represented by their lumped elements equivalent model. This allows the correct model of the tuning effect and the definition of the tuning possibilities and limits. In order to validate the methodology, the tunable patch filters are fabricated using Microwave Integrated Circuit (MIC) technology on flexible substrates. The minimum dimensions are greater than 0.5 mm, ensuring a low cost fabrication process. The first filter is a tunable dual-mode patch filter using a triangular resonator with two perpendicular slots. The central frequency and the bandwidth of the filter are individually tuned by independently controlling each degenerate fundamental mode. The topology with uncoupled modes allows the control of each resonant mode frequency by varactor diodes mounted across the slots of the patch resonator. This filter presents a center frequency tuning range of 20 %, varying from 2.9 GHz to 3.5 GHz. The FBW 3dB can be varied from 4 % to 12 %. Two different DC bias voltages ranging from 2.5 V to 22 V are used to tune this filter. The second filter is a tunable triple-mode patch filter using a circular resonator with four slots, across which the varactor diodes are connected. The center frequency and bandwidth of this filter vary simultaneously. This filter presents a center frequency tuning range of 27 %, varying from 1.8 GHz to 2.35 GHz, changing concomitantly with the bandwidth from 8.5 % to 26 %. Only a single DC bias voltage ranging from 0.5 V to 20 V is used to tune the filter. Both filters are able to handle power levels as high as +14.5 dBm (triangular patch filter) and +12.9 dBm (circular patch filter).

Lasers sintonizáveis ao redor de 2,3 &#956;m são interessantes para várias áreas, como detecção de gases, sensoriamento remoto e aplicações médicas. O túlio é o principal sistema entre os lasers de terras-raras com essa emissão e pode ser bombeado diretamente ou por meio de um sensibilizador como o itérbio. Neste trabalho, apresenta-se a obtenção de um laser de Yb:Tm:YLF com emissão de 620 mW em 2,3 &#956;m bombeado em 960 nm por diodo-laser de 20 W do tipo barra em regime quase-contínuo. Investiga-se o bombeamento de um cristal de Tm:YLF em 685 nm e obtém-se de forma inédita um laser de Yb:Tm:YLF bombeado simultaneamente em 685 e 960 nm. Demonstra-se teórica e experimentamente sua maior eficiência em relação ao bombeamento apenas por 960 nm. Por meio de simulações numéricas e soluções analíticas, mostra-se a melhor relação de potência de bombeamento de cada comprimento de onda para se otimizar o laser. / Tunable lasers emitting around 2.3 &#956;m region are important in many areas, like gas detection, remote sensing and medical applications. Thulium has a large emission spectra around 2.3 &#956;m with demonstrated tuning range of 2.2-2.45 &#956;m using the YLF host. For efficient pump absorption, a high concentration sensitizer like ytterbium can be used. We demonstrate quasi-cw operation of the Yb:Tm:YLF laser, pumped at 960 nm with a 20 W diode bar achieving the highest output power reported so far of 620 mW. Simultaneous pumping of the 2.3mm Yb:Tm:YLF laser at 685 nm and 960 nm is demonstrated, showing higher slope efficiency than 960 nm alone. Numerical simulations and analytical models show the best ratio of pump power between both wavelengths.

With data throughput increasing exponentially in wireless communication networks, the limited radio frequency (RF) spectrum is unable to meet the future data rate demand. As a promising complementary approach, optical wireless communication (OWC) has gained significant attention since its licence-free light spectrum provides a considerable amount of communication bandwidth. In conventional OWC systems, the information-carried signal has to be real-valued and non-negative due to the incoherent light output of the conventional optical transmitter, light emitting diode (LED). Therefore, an intensity modulation and direct detection (IM/DD) system is used for establishing the OWC link. Some modified orthogonal frequency division multiplexing (OFDM) schemes have been proposed to achieve suitable optical signals. In previous research, three OFDM-based schemes have been presented, including DC-biased optical orthogonal frequency division multiplexing (DCO-OFDM), asymmetrically clipped optical orthogonal frequency division multiplexing (ACO-OFDM) and unipolar orthogonal frequency division multiplexing (U-OFDM). Basic concepts of SPAD receivers are studied and a novel application in OWC is proposed for a permanent downhole monitoring (PDM) system in the gas and oil industry. In this thesis, a complete model of the SPAD-based OWC system is presented, including some related SPAD metrics, the photon counting process in SPAD and a specific nonlinear distortion caused by passive quenching (PQ) and active quenching (AQ) recharged circuits. Moreover, a practical SPAD-based visible light communication (VLC) system and its theoretical analysis are presented in a long-distance gas pipe with a battery-powered LED and a basic on-off keying (OOK) modulation scheme. In this thesis, two novel optical orthogonal frequency division multiplexing (O-OFDM) technologies are proposed: non-DC-biased orthogonal frequency division multiplexing (NDCOFDM) and OFDM with single-photon avalanche diode (SPAD). The former is designed for optical multiple-input multiple-output (O-MIMO) systems based on the optical spatial modulation (OSM) technique. In NDC-OFDM, signs of modulated O-OFDM symbols and absolute values of the symbols are separately transmitted by different information carrying units. This scheme can eliminate clipping distortion in DCO-OFDM and achieve high power efficiency. Furthermore, as the indices of transmitters carry extra information bits, NDC-OFDM gives a significant improvement in spectral efficiency over ACO-OFDM and U-OFDM. In this thesis, SPAD-based OFDM systems with DCO-OFDM and ACO-OFDM are presented and analysed by considering the nonlinear distortion effect of PQ SPAD and AQ SPAD. A comprehensive digital signal processing of SPAD-based OFDM is shown and theoretical functions of the photon counting distribution in PQ SPAD and AQ SPAD are given. Moreover, based on Bussgang theorem, a conventional method for analysing memoryless distortion, close-formed bit-error rate (BER) expressions of SPAD-based OFDM are derived. Furthermore, SPAD-based OFDM is compared with conventional photo-diode (PD) based OFDM systems, and a gain of 40 dB in power efficiency is observed.

O objetivo do presente estudo foi avaliar o efeito antibacteriano do laser diodo com diferentes comprimentos de onda em blocos de dentina infectados com Enterococcus faecalis, por meio de análise microbiológica com espectrofotometria e alterações ultraestruturais por meio de microscópio eletrônico de varredura. Treze dentes unirradiculares foram seccionados de forma a obter 100 blocos de dentina intrarradicular. Inicialmente, os blocos foram imersos por 5 minutos em EDTA 17% e em seguida lavados por 5 minutos com água destilada, e então autoclavados por 30 minutos a 120&deg;C. As amostras de dentina foram inoculadas com 1mL de suspensão de E. faecalis em 5mL de BHI (Brain Heart Infusion) e incubadas a 37&deg;C por cinco dias. Após a contaminação, os espécimes foram distribuídos em dez grupos (n=10) de acordo com tratamento de superfície: GI - 5 mL NaOCl 2,5%, GII - 5 mL NaOCl 2,5% + diodo 808nm, GIII - 5 mL NaOCl 2,5% + diodo 970nm, GIV - diodo 808nm, GV - diodo 970nm, GVI - CHX 2%, GVII - CHX 2% + diodo 808nm, GVIII - CHX 2% + diodo 970nm, GIX - controle positivo e GX controle negativo. O crescimento bacteriano foi analisado pela turbidez e densidade óptica do meio de cultura por espectrofotometria (nm). Em seguida, os espécimes foram preparados para análise das alterações ultraestruturais da superfície dentinária em MEV. Os dados foram submetidos ao teste ANOVA um fator e evidenciaram que o GI (77,5 ± 12,1), GII (72,5 ± 12,2), GIII (68,7 ± 8,7), GV (68,3 ± 8,7), GVI (62,0 ± 5,5) e GVII (67,5 ± 3,3) foram semelhantes entre si e diferente estatisticamente dos grupos GIV (58,8 ± 25,0), GVIII (59,2 ± 4,0) e grupos controles (p<0,05). A análise em MEV evidenciou uma matriz orgânica amorfa e derretimento da dentina intertubular quando submetidos à irradiação do laser diodo 970nm, e erosão da dentina intertubular quando irradiada com laser 808nm, sendo que ao associar NaOCl 2,5% ao laser com diferentes comprimentos de onda, observou-se maior erosão intertubular. Conclui-se que todos os protocolos terapêuticos foram capazes de reduzir o contingente bacteriano dos blocos de dentina e ao associar o laser diodo e soluções não houve melhora significativa na redução do contingente bacteriano. / The objective of this study was to evaluate the disinfection degree of dentin blocks contaminated by Enterococcus faecalis caused by different diode laser wavelengths through microbiological analysis with spectrophotometry and ultrastructural alterations by scanning electron microscope. Thirteen uniradicular teeth were sectioned into 100 dentin Intraradicular blocks. Initially, the blocks were immersed for 5 minutes in 17% EDTA and then washed for 5 minutes with distilled water, and then esterilized for 30 minutes at 120&deg;C. The dentin samples were inoculated with 1mL of E. faecalis suspension in 5mL BHI (Brain Heart Infusion) and incubated at 37&deg;C for five days. After contamination, the specimens were distributed into ten groups (n = 10) according to surface treatment: GI - 5 mL NaOCl 2.5%, GII - 5 mL NaOCl 2.5% + diode 808nm, GIII - 5 mL NaOCl 2.5% + diode 970nm, GIV - diode 808nm, GV - diode 970nm, GVI - CHX 2%, GVII - CHX 2% + diode 808nm, GVIII - CHX 2% + diode 970nm, GIX - positive control and GX - Negative control. Bacterial growth was analyzed by turbidity and optical density of the culture medium by spectrophotometry (nm). Afterwards, the specimens were processed for analysis of the ultrastructural changes of the dentin surface in SEM. The data was subject to the One-way ANOVA test and showed that GI (77,5 ± 12,1), GII (72,5 ± 12,2), GIII (68,7 ± 8,7), GV (68,3 ± 8,7) and GVII (67,5 ± 3,3) were statistically similar and statistically different from GIV (58,8 ± 25,0), GVIII (59,2 ± 4,0) and control groups (p <0.05). SEM analysis showed a modified organic matrix layer with an amorphous, intertubular dentin melting when dentin samples were irradiated with 970nm diode laser, erosion of the intertubular dentin in blocks submitted to 808nm diode laser, and a increased erosion of the intertubular dentin when associating NaOCl 2,5% to the laser with different wavelengths. All the therapeutic protocols were able to reduce the bacterial contingent in dentin blocks with the association of laser diode and solutions did not significantly improve the reduction of the bacterial contingent.

To fully exploit the potential of gallium nitride (GaN) devices for optoelectronics and power electronic applications, the structures of device need to be investigated and optimized. In particular carrier densities, conductivities and localised charges can have a significant impact to device performances. Electrical scanning probe microscopy techniques, including scanning capacitance microscopy (SCM), conductive atomic force microscopy (C-AFM) and kelvin probe force microscopy (KPFM), were utilized to study the structures of nitride devices such as high electron mobility transistors (HEMTs), light emitting diodes (LEDs) and junction diodes. These results combine with other characterisation techniques to give an enhanced understanding about the nitride structures. Leakage currents are one of the major challenges in HEMTs, especially leakages in buffer layers which deteriorate the breakdown voltage of the devices. To achieve an insulating buffer layer, carbon doping is usually used to compensate the unintentional n-type doping of nitride materials. Here, I show that vertical leakage can originate from the formation of inverted hexagonal pyramidal defects during the low temperature growth of an AlGaN:C strain relief layer. The semi-polar facets of the defects enhanced the oxygen incorporation and led to the formation of leakage pathways which were observed using SCM. Leakage occurring at HEMT surfaces will lead to current collapses of devices. In this work, I discovered nano-cracks on a HEMT surface. C-AFM showed enhanced conductivity along these nano-cracks. A model based on stress relaxation analysis was proposed to explain the drop of surface potential along the nano-cracks. Advances in the quality of epitaxial GaN grown by MOVPE have been facilitated by understanding the formation of defects within the materials and structures. However, hillocks as a specific type of defects have not been intensively studied yet. In this work, three types of hillocks were discovered on GaN p-i-n diodes and a GaN film grown on patterned sapphire substrates. It was found that pits were always present around the centres of hillocks. Multi-microscopy results showed these pits were developed from either an inversion domain or a nano-pipe or a void under the sample surface. Formation of hillocks was usually associated with a change of growth condition, such as an increase in Mg doping or a decrease in growth temperature and gas flows, despite the formation mechanism is still unclear. GaN$_{1-x}$As$_x$ is a highly mismatched alloy semiconductor whose band-gap can be engineered across the whole visible spectrum. For this reason and the potential to achieve high p-type doping, GaN$_{1-x}$As$_x$ is a promising material for optoelectronic applications. However, the growth of GaN$_{1-x}$As$_{x}$ at intermediate As fraction while maintaining a high conductivity and uniformity of the material is still challenging. Two n-GaN/p-GaN$_{1-x}$As$_x$ diodes with different Ga flows were investigated. Both samples demonstrated that highly Mg-doped GaN$_{1-x}$As$_x$ with high As fraction is achievable. However, the samples contained both amorphous and polycrystalline regions. The electrical scanning probe microscopy results suggested the amorphous structure has a lower hole concentration and hence conductivity than the polycrystalline structure. Nevertheless, there is still a lack of understanding about the electrical properties and conduction mechanisms of the GaN$_{1-x}$As$_x$ alloy.

FLIM is branch of microscopy mainly used in biology which is quickly improving thanks to a rapid enhancement of instrumentation and techniques enabled by new sensors. In FLIM, the most precise method of measuring fluorescent decays is called TCSPC. High voltage PMT detection devices together with costly and bulky optical setups which scan the sample are usually required in TCSPC instrumentation. SPADs have enabled a big improvement in TCSPC measurement setup, providing a CMOS compatible device which can be designed in wide arrays format. However, sensors providing in-pixel TCSPC do not scale in size and in large array like the time-gated SPAD pixel sensors do. Time-gated pixels offer a less precise lifetime estimation, discarding any photon information outside a given time window, but this loss in photon-efficiency is offset by gains in pixel size. This work is aimed at the development of a wide field TCSPC sensor with a pixel size and fill factor able to reduce the cost of such devices and to obtain a high resolution time-resolved fluorescence image in the shortest time possible. The study focuses on SPAD and pixel design required to maximise the fill factor in sub 10 μm pixel pitch. Multiple pixel designs are proposed in order to reduce pixel area and so enable affordable wide array TCSPC systems. The first proposed pixel performs the CMM lifetime estimation in order to reduce the frame rate needed to stream the data out of the SPAD array. This pixel is designed in a 10 μm pitch and attains with the most aggressive design a fill factor of 10:17 %. A second design proposes an analogue TCSPC which consists in a S/H TAC circuitry. This simpler pixel can achieve a higher fill factor of 19:63% as well as smaller pitch of 8 μm thanks to the adoption of SPAD n-well and electronics area sharing. This last design is implemented in a 320 x 256 SPAD array in which is included part of a novel ADC aimed at reduction of the processing time required to build a TCSPC histogram. A more conventional analogue readout is used to evaluate the pixel performance as well as a more fine TCSPC histogram. The device was used to measure the fluorescence lifetime of green micro-spheres while the 2b flash ADC is used to demonstrate rapid resolution and separation of two different fluorescence decays.

O objetivo deste estudo foi avaliar o efeito da terapia fotodinâmica antimicrobiana (TFDa), utilizando laser de baixa potência, em duas densidades de energia, associado ao azul de toluidina em biofilme de S. mutans. Biofilmes de S. mutans UA159 foram crescidos por 5 dias em discos de resina acrílica (3 mm de diâmetro x 2 mm de altura) a 37&ordm;C 5 % de CO2;. Os espécimes foram divididos aleatoriamente em 4 grupos de tratamento (n=3): Digluconato de clorexidina 0,12% (CHX, controle positivo); Solução salina a 0,89% (NaCl, controle negativo); Terapia fotodinâmica antimicrobiana com azul de toluidina e laser de baixa potência (densidade de energia 320 J/cm&sup2;) (TFDa 320); Terapia fotodinâmica antimicrobiana com azul de toluidina e laser de baixa potência (densidade de energia 640 J/cm&sup2;) (TFDa 640). Os tratamentos foram realizados 2x/dia durante 3 dias. Ao final dos 5 dias, os biofilmes foram coletados e número de bactérias viáveis e a concentração de polissacarídeos extracelulares insolúveis (PECI) e intracelulares (PIC) foram determinadas e analisadas estatisticamente (ANOVA e teste de Tukey, p < 0,05). O tratamento com a TFDa (320 e 640 J/cm&sup2;) reduziu o número de bactérias viáveis em biofilmes de S. mutans, de uma maneira dose-dependente (p < 0,05). Além disso, a TFDa 640 J/cm&sup2;, reduziu a viabilidade bacteriana de forma tão eficaz quanto a CHX (p > 0,05). Em relação a PECI e PIC, os grupos TFDa (320 e 640 J/cm&sup2;) não foram significativamente diferentes de CHX (p > 0,05). Os resultados mostraram que a terapia fotodinâmica antimicrobiana, mediada pelo azul de toluidina e laser de diodo (640 J/cm&sup2;), pode ser uma abordagem utilizada no controle do biofilme dental cariogênico. / The aim of this study was to evaluate the effect of antimicrobial photodynamic therapy (aPDT), using low-power laser, with two energy densities, associated with toluidine blue in S. mutans biofilm. S. mutans UA159 biofilms were grown for 5 days on acrylic resin discs (3 mm diameter x 2 mm height) a 37&ordm;C, 5 % de CO2. The specimens were randomly divided into 4 treatment groups (n = 3): 0.12% chlorhexidine digluconate (CHX, positive control); 0,89% Saline (NaCl, negative control); Antimicrobial photodynamic therapy with toluidine blue and low power laser (energy density of 320 J/cm&sup2;) (aPDT 320); Antimicrobial photodynamic therapy with toluidine blue and low power laser (energy density of 640 J/cm&sup2;) (aPDT 640). Treatments were performed 2x/day for 3 days. At the end of 5 days, the biofilms were collected and the number of viable bacteria and the concentration of insoluble extracellular (IEPS) and intracellular polysaccharides (IPS) were determined and analyzed statistically (ANOVA and Tukey\'s test, p<0.05). Treatment with aPDT (320 and 640 J/cm&sup2;) reduced the number of viable bacteria of S. mutans biofilms in a dose-dependent manner (p<0.05). Furthermore, the aPDT 640 group reduced the bacterial viability as effectively as CHX group (p>0.05). For IEPS and IPS, the aPDT groups (320 and 640 J/cm&sup2;) were not significantly different CHX (p>0.05). The results showed that the antimicrobial photodynamic therapy mediated by toluidine blue and diode laser (640 J/cm&sup2;) may be an approach used to control the cariogenic dental biofilm.