Introdução: A Radioterapia é frequentemente utilizada no tratamento do câncer, seja como uma modalidade simples ou em combinação com outras modalidades, tais como a cirurgia e a quimioterapia. Com o objetivo de eliminar células não desejadas no organismo humano, utiliza-se de radiações ionizantes para provocar a destruição de células tumorais pela absorção da energia da radiação incidente. A principal dificuldade encontrada em radioterapia é que as células tumorais não são tratadas isoladamente, isto é, o dano da radiação não é restrito somente às células tumorais, mas afeta também as células normais. Assim sendo, é essencial que a dose de radiação liberada nos tecidos normais seja tão baixa quanto possível para minimizar o risco de efeitos colaterais provocados pelos tratamentos radioterápicos. Objetivos: O objetivo deste trabalho é a caracterização de dosímetros semicondutores e dosímetros termoluminescentes e suas aplicações em técnicas não convencionais de Radioterapia. A partir da caracterização será possível a implementação dos dosímetros como sistema de dosimetria in vivo em teleterapia com feixe de fótons, visando atender as necessidades prementes do Serviço de Radioterapia do HCFMRP em implantar a técnica de irradiação de corpo inteiro e em realizar o controle de dose administrada ao paciente. Metodologia e Resultados: Diodos semicondutores foram caracterizados de acordo com o fator campo, angulação, taxa de dose, temperatura e fator bandeja, para obtenção dos fatores de correção. Verificou-se que a variação da resposta dos diodos com a temperatura, angulação e taxa de dose não foi significativa. Fatores campo foram calculados e registrados para campos de 3x3 cm 2 a 40x40cm 2 , onde se observou aumento na leitura do diodo com o aumento no campo. A resposta com a taxa de dose apr esentou pouca variação (de 100cGy/min para 300cGy/min a variação foi menor que 1,2%). O fator bandeja encontrado foi de 0,95±0,01 demonstrando que a presença da bandeja provoca diminuição na resposta do detector. Após a caracterização, os diodos foram calibrados em setup TBI para determinação dos fatores de calibração para cada espessura simulada do paciente (DLL). A dosimetria in vivo foi realizada em 3 pacientes submetidos ao tratamento de TBI do HCFMRP. A diferença percentual máxima entre as medidas com diodo e o valor nominal de dose foi de 3,6%, o que está de acordo com o recomendado pelo ICRU (+/- 5%). Os resultados demonstram a viabilidade e confiabilidade da técnica de dosimetria com diodos semicondutores para Controle de Qualidade de dose em tratamento de TBI. Ainda, dosímetros termoluminescentes foram caracterizados quanto à homogeneidade do grupo e a linearidade. Os fatores de calibração individuais foram encontrados e os dosímetros foram aplicados em simulações em setup TBI. Os cálculos de dose das simulações realizadas com os termoluminescentes inseridos nos orifícios de um OSA demonstraram concordância com os valores nominais de dose. Para as regiões do tórax superior e inferior, onde os TLD receberam doses mais elevadas (>150cGy), recomendou-se a utilização de compensadores de dose, para a prática clínica.Uma câmara de ionização foi utilizada como dosímetro de referência em todas as etapas de calibração e caracterização dos diodos e termoluminescentes. Conclusões: Este estudo mostrou que, para tratamentos de irradiação de corpo inteiro, quando o paciente estiver sendo preparado para um transplante de medula óssea, e o planejamento necessitar de uma grande eficácia na distribuição de dose, a metodologia com aplicações de dosímetros semicondutores apresenta-se como uma alternativa viável, precisa e de grande importância para o controle dosimétrico. Assim, ficou evidenciada a importância da utilização do diodo para o Controle de Qualidade, na avaliação da dos e a ser ministrada ao paciente, pelo menos em toda primeira fração de tratamento de TBI. Além disso, ficou demonstrada a aplicabilidade dos dosímetros termoluminescentes para controle dosimétrico, demonstrando o valor da dosimetria termoluminescente como um sistema de verificação de dose e sua eficácia como parte de um programa de garantia de qualidade em Radioterapia. A caracterização dos termoluminescentes evidenciou a possibilidade de aplicação da técnica TL em dosimetria in vivo. / Introduction: Radiation therapy is often used in cancer treatment, either as a single modality or in combination with other modalities, such as surgery and chemotherapy. Aiming to eliminate unwanted cells in the human body, radiation therapy uses ionizing radiation to cause destruction of tumor cells by absorbing the energy of the incident radiation. The main difficulty in radiation therapy is that tumor cells are not separately treated. The radiation damage is not restricted solely to tumor cells, but also affects normal cells. Therefore, it is essential that the radiation dose released in normal tissues is as low as possible to minimize the risk of side effects caused by radiotherapy treatments. Objectives: The objective of this work is the characterization of semiconductor dosimeters and thermoluminescent dosimeters and their applications in non -conventional radiotherapy techniques. After characterization it will be possible to implement the dosimeters as a system of in vivo dosimetry in radiotherapy with photon beam, to meet the pressing needs of the Radiotherapy Service of HCFMRP in deploying the technique of total body irradiation and make the control of dose administered to the patient . Methodology and Results: Semiconductor diodes were characterized according to the field factor, angle, dose rate, temperature and tray factor to obtain the correction factors. It was found that the variation of the response of the diodes with temperature, angle and dose rate was not significant. Field factors were calculated and recorded for fields from 3x3 cm 2 to 40x40cm 2 , wher e there was an increase in the reading of the diode with increasing field. The response with dose rate showed small variation (from 100cGy/min to 300cGy/min the variation was less than 1.2%). The tray factor was 0.95 ± 0.01 demonstrating that the tray decreases detector response. After characterization, the diodes were calibrated in TBI setup for determining the calibration factors for each simulated patient thickness (latero-lateral distance). The in vivo dosimetry was performed in 3 patients undergoing TBI treatment in HCFMRP. The maximum percentage difference between the measurements and the diode nominal dose was 3.6%, which is consistent with that recommended by ICRU (+ / - 5%). The results demonstrate the feasibility and reliability of the dosimetry technique with semiconductor diodes for dose quality control in TBI treatments. Still, dosimeters were characterized by group homogeneity and linearity. The calibration factors were found and individual dosimeters were applied in simulations with TBI setup. The dose calculation of simulations performed with the thermoluminescent inserted in holes of the phantom showed agreement with the nominal dose. For regions of the upper and lower thorax where TLD received higher doses (> 150cGy) it was recommended the use of compensating dose in clinic. An ionization chamber dosimeter was used as reference in all stages of calibration and characterization of diodes and thermoluminescents. Conclusions: This study showed that, for total body irradiation treatments, when the patient is being prepared for a bone marrow transplant, and planning requires a great effect on the dose distribution, the methodology with semiconductor dosimeters presented a viable alternative, and has great importance for the dosimetric control. The study proved the importance of diode semiconductors for quality control, for evaluation of the dose to be administered to the patient, at least throughout the first fraction of TBI treating. Furthermore, it was demonstrated the applicability of TLD for control quality, demonstrating the value of thermoluminescent dosimetry as a dose verification system and its effectiveness as part of a program of quality assurance in radiotherapy. The characterization of thermoluminescent showed the possibility of applying the TL technique in in vivo dosimetry.

Neste trabalho são apresentados os resultados da caracterização dosimétrica de dois diodos especiais de silício, resistentes a danos de radiação, crescidos pelo método epitaxial com vistas a sua aplicação na monitoração em tempo real de feixes de fótons de qualidades de radiodiagnóstico convencional, mamografia e tomografia computadorizada, no intervalo de tensão de 28 kV a 150 kV. Os dispositivos utilizados, um submetido à pré-dose de 200 kGy de raios gama do 60Co no Centro de Tecnologia das Radiações (CTR) do IPENCNEN/ SP, e outro sem qualquer irradiação prévia, foram processados na Universidade de Hamburgo a partir de uma camada epitaxial com 50 μm de espessura. Apenas para comparação, um diodo de Si crescido por fusão zonal padrão foi também estudado. As irradiações foram realizadas no Laboratório de Calibração de Instrumentos (LCI) do IPEN/CNEN-SP, onde está instalado um gerador de radiação X, Pantak-Seifert, Isovolt 160 HS, cujas qualidades de radiação foram verificadas por câmaras de ionização padronizadas. Os diodos foram ligados a um eletrômetro Keithley 6517B em modo fotovoltaico, com a distância do ponto focal do gerador aos diodos mantida em 1 m. Os principais parâmetros dosimétricos das amostras foram avaliados de acordo com a norma IEC61674. Os coeficientes de calibração dos diodos em termos do kerma no ar também foram determinados. Os diodos apresentaram excelente estabilidade de resposta em curto prazo para as qualidades estudadas, com coeficientes de variação em corrente equivalentes e não superiores a 0,3%. O comportamento das fotocorrentes em função da taxa de dose foi linear para os três dispositivos no intervalo de 0,8 a 77,2 mGy/min. As curvas carga-dose obtidas pela integração dos sinais de corrente tornaram evidente a ausência de dependência energética para feixes de mamografia e de radiodiagnóstico até 70 kV. O diodo epitaxial sem pré-dose apresentou maior sensibilidade em corrente e em carga em relação aos demais, com queda neste parâmetro de 8% após receber dose acumulada de 49 Gy. Até este limite de dose, as correntes de fuga dos dispositivos mantiveram-se estáveis em cerca de 0,4 pA ao longo das irradiações, sendo menores por um fator até 104 em relação às correntes em condição de irradiação. A variação da resposta direcional de ambos diodos para o intervalo de ± 5° foi inferior a 0,1 % e seus coeficientes de calibração para os feixes estudados foram determinados a partir dos padrões de referência do LCI. As alterações das características elétricas das amostras em função de danos de radiação foram também estudadas e não revelaram alteração significativa para tensão de polarização nula. Com base nos resultados obtidos até o presente e considerando as recomendações da norma IEC 61674, pode-se afirmar que diodos epitaxiais sem pré-dose e com pré-dose podem ser empregados de forma confiável na dosimetria de feixes de radiação eletromagnética para imagens médicas até o limite de dose acumulada de 10 Gy e acima de 206 kGy, respectivamente. / In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200 kGy from 60Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratório de Calibração de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at 1m from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 104 higher than the lowest photocurrents measured. The directional response of both diodes was 0.1% within an angle range of ± 5°. Based on these results, one can conclude that the unirradiated and pre-irradiated EPI diodes can be used as a reliable alternative choice to relative medical imaging photon dosimetry within 10 Gy and 206 kGy of accumulated dose, respectively.

There are various types of test performed on Integrated Circuits, (IC), for detecting and locating defects and faults during failure analysis. Functional, logic, parametric and IDDQ tests are among the most common. Functional IC tests are designed to verify whether the IC performs its intended function. Logic tests verify the logic operation of gates and registers. AC and DC parametric tests are used to measure time, voltage and current-varying parameters associated with the operational limits of the IC. Test parameters in parametric testing include, among others, propagation delay, operating current and signals rise and fall time. Currently, almost all ICs are manufactured or refurbished in Asia. A greater portion of the ICs are processed in China and Malaysia. Presently issues with component reliability are compromised since the ICs are not tested before they leave the factory, are sometimes only remarked with different part numbers and date codes or resold even though they do not work properly. These activities lead to a high level of uncertainty among consumers all over the world. The purpose of this research was the design of a software-defined semiconductor validation test system using the PCI eXtension for Instrumentation, (PXI), platform. The test system was to be capable of performing Open and Short Circuit Tests for CMOS components. Open and Short Circuit Tests verify for faults at the protection diode circuitry of CMOS chips level. The test system reduces the overall test timing compared to the tests performed by a functional instrument such as a curve tracer. PXI is a modular instrumentation platform originally introduced in 1997 by National Instruments, (NI). PXI is an open, PC-based platform for test, measurement and control. PXI possesses the highest bandwidth and lowest latency with modular inputs and outputs for high-resolution from DC to RF frequencies. PXI was designed for measurement and automation applications that require high-performance. Concepts associated with the Systems of Systems Engineering, (SoSE), approach were applied to this research in order to facilitate the design process for the test system. The objective was to apply Systems Engineering methodologies to the design of this particular test system.

Millimeter wave imaging systems are the next generation imaging systems being developed for security and surveillance purposes. In this work, thin film metal-insulator-metal (MIM) tunnel junction based detector using Ni-NiO-Cr has been developed for the first time for millimeter wave detection operating at 94 GHz. Extensive process development has been carried out to fabricate the MIM junctions. Arrays of MIM junctions with 1 µm² contact area and ultra-thin insulator layer of ~3 nanometer have been developed using e-beam lithography and reactive sputtering, respectively. MIM diodes were also fabricated in a bulk-micromachined diaphragm configuration to minimize surface wave loss. DC and millimeter wave measurements were carried out on the fabricated diodes to determine the device characteristics and performance. The current-voltage (I-V) measurements yielded current in the range of few µA with significant non-linearity and asymmetry. A maximum sensitivity of 7 V-1 was also obtained from the fabricated diode. These tunnel junctions showed a positive response to millimeter wave signal, with output current in the range of few µA. By controlling the input power of the millimeter wave signal, the output current from the device could be varied. Additionally, MIM diodes with 100 µm² contact area were developed using optical lithography technique. The I-V characteristics of diode demonstrated a uniform behavior, with a sensitivity value of 15 V-1. Furthermore, the diodes were utilized to observe the effects of post-deposition annealing on the diode I-V behavior. The I-V measurement provided evidence of diode operation up to 350°C, with optimal operation at 250°C. Finally, the feasibility of using an organic insulator was also investigated. MIM junctions were fabricated with a thin layer of polyaniline using Langmuir-Blodgett deposition process. The electrical characteristics of the polyaniline based MIM junction was determined by evaluating its I-V response. The use of an alternate dielectric proved successful, yielding a significant non-linearity and asymmetry. However, the output current obtained from these junctions was in the order of nano-Amperes. By optimizing the deposition process, the organic MIM junctions can be developed to yield better device characteristics.

Optoelectronic devices operating in the mid-wave (3-5 Μm) and long-wave (8-12 Μm) infrared (IR) regions of the electromagnetic spectrum are of a great interest for academic and industrial applications. Due to the lack of atmospheric absorption, devices operating within these spectral bands are particularly useful for spectroscopy, imaging, and dynamic scene projection. Advanced IR imaging systems have created an intense need for laboratory-based infrared scene projector (IRSP) systems which can be used for accurate simulation of real-world phenomena occurring in the IR. These IRSP systems allow for reliable, reproducible, safe, and cost-effective calibration of IR detector arrays. The current state-of-the-art technology utilized for the emitter source of IRSP systems is thermal pixel arrays (TPAs) which are based on thin film resistor technology. Thermal pixel array technology has fundamental limitations related to response time and maximum simulated apparent temperature, making them unsuitable for emulation of very hot (> 700 K) and rapidly evolving scenes. Additionally, there exists a need for dual wavelength emitter arrays for IRSP systems dedicated to calibration of dual wavelength detector arrays. This need is currently met by combining the spectral output from two separate IRSP systems. This configuration requires precise alignment of the output from both systems and results in the maximum radiance being limited to approximately half that of the capability of a given emitter array due to the optics used to combine the outputs. The high switching speed inherent to IR light-emitting diodes (LEDs) and the potential for high power output makes them an appealing candidate to replace the thermal pixel arrays used for IRSP systems. To this end, research has been carried out to develop and improve the device performance of IR LEDs based on InAs/GaSb type-II superlattices (T2SLs). A common method employed to achieve high brightness from LEDs is to incorporate multiple active regions, coupled by tunnel junctions. Tunnel junctions must provide adequate barriers to prevent carrier leakage, while at the same time remain low in tunneling resistance to prevent unwanted heating. The performance of two tunnel junction designs are compared in otherwise identical four stage InAs/GaSb superlattice LED (SLED) devices for application in IRSP systems. This research culminated in the development of a 48 Μm pitch, 512$times512 individually addressable mid-wave IR LED array based on a sixteen stage, InAs/GaSb T2SL device design. This array was hybridized to a read-in integrated circuit and exhibited a pixel yield greater than 95 %. Projections based on single element emitter results predict this array will be able to achieve a peak apparent temperature of 1350 K within the entire 3-5 Μm band. These results demonstrate the feasibility of emitter arrays intended for IRSP systems based on InAs/GaSb SLED devices. Additionally, a dual wavelength 48 Μm pitch, 8x8 emitter array based on InAs/GaSb T2SL LEDs was developed and demonstrated. This design incorporates two separate, 16 stage InAs/GaSb SL active regions with varying InAs layer thicknesses built into a single vertical heterostructure. The device architecture is a three terminal device allowing for independent control of the intensity of each emission region. Each emitter region creates a contiguous pixel, capable of being planarized and mated to drive electronics.

This dissertation presents the rectifying antennas potential for harvesting solar power, along with a novel design for a solar rectenna. The suns general features and the characteristics of solar radiation as an electromagnetic wave are treated in depth in order to determine the deficiencies of traditional rectennas as a solar cell. A closed form equation for a MIM rectifiers efficiency as a function of its input power was developed and verified by a simulated behavioral model and measurements. A unique calculation method was also developed to determine the available solar power at the terminal of a [lambda]/2 dipole antenna as a function of its bandwidth. The available power for each diode at the antennas terminal was found to be insufficient for a MIM diode to operate in its high efficiency region. It was concluded that the MIM diode requires an array of high gain antennas to increase the solar power captured at its input in order to operate in its high efficiency region. A dielectric rod antenna is proposed as the high gain antenna element for the solar antenna. In order to minimize losses due to the skin effect in the feed system of the array, a non-radiative dielectric (NRD) wave guide is proposed as the feed structure for the solar array antenna. To increase the rectification efficiency of the solar rectenna, two improvements were introduced: 1) the solar antenna was modified to function as a dual polarized antenna; and 2) a novel technique was used to achieve full-wave rectification. Test results of prototypes of the proposed solar antennas and arrays, show them to be potentially far superior to traditional [lambda]/2 dipole antennas for collecting solar radiation. The interconnection method for rectennas in an array – as well as their associated dc losses – were also investigated. Based on the theoretical results, a novel interconnection method is proposed here, which has the potential to minimize the dc losses in the grid. A series of experiments were conducted to verify the proposed concepts, which yielded promising results.

Energy harvesting using rectennas for infrared radiation continues to be a challenge due to the lack of fast switching diodes capable of rectification at THz frequencies. Metal insulator metal diodes which may be used at 30 THz must show adequate nonlinearity for small signal rectification such as 30 mV. In a rectenna assembly, the voltage signal received as an output from a single nanoantenna can be as small as ~30µV. Thus, only a hybrid array of nanoantennas can be sufficient to provide a signal in the ~30mV range for the diode to be able to rectify around 30THz. A metal-insulator-metal diode with highly nonlinear I-V characteristics is required in order for such small signal rectification to be possible. Such diode fabrication was found to be faced with two major fabrication challenges. The first one being the lack of a precisely controlled deposition process to allow a pinhole free insulator deposition less than 3nm in thickness. Another major challenge is the deposition of a top metal contact on the underlying insulating thin film. As a part of this research study, most of the MIM diodes were fabricated using Langmuir Blodgett monolayers deposited on a thin Ni film that was sputter coated on a silicon wafer. UV induced polymerization of the Langmuir Blodgett thin film was used to allow intermolecular crosslinking. A metal top contact was sputtered onto the underlying Langmuir Blodgett film assembly. In addition to material characterization of all the individual films using IR, UV-VIS spectroscopy, electron microscopy and atomic force microscopy, the I-V characteristics, resistance, current density, rectification ratio and responsivity with respect to the bias voltage were also measured for the electrical characterization of these MIM diodes. Further improvement in the diode rectification ratio and responsivity was obtained with Langmuir Blodgett films grown by the use of horizontally oriented organic molecules, due to a smaller tunneling distance that could be achieved in this case. These long chain polymeric molecules exhibit a two-dimensional molecular assembly thereby reducing the tunneling distance between the metal electrodes on either side of the insulating layer. Rectification ratios as high as 450:1 at ±200mV were obtained for an MIM diode configuration of Ni-LB films of Arachidic Acid films-(Au/Pd). The bandwidth of the incident radiation that can be used by this rectenna assembly is limited to 9.5% of 30THz or ±1.5THz from the center frequency based on the antenna designs which were proposed for this research. This bandwidth constraint has led to research in the field of frequency selective emitters capable of providing a narrowband emission around 30THz. Several grating structures were fabricated in the form of Ni-Si periodic arrays, in a cleanroom environment using photolithography, sputtering and deep reactive ion etching. These frequency selective samples were characterized with the help of focusing optics, monochromators and HgCdTe detectors. The results obtained from the emission spectra were utilized to calibrate a simulation model with Computer Simulation Technology (CST) which uses numerous robust solving techniques, such as the finite element method, in order to obtain the optical parameters for the model. Thereafter, a thorough analysis of the different dimensional and material parameters was performed, to understand their dependence on the emissivity of the selective emitter. Further research on the frequency selectivity of the periodic nano-disk or nano-hole array led to the temperature dependence of the simulated spectra, because the material parameters, such as refractive index or drude model collision frequency, vary with temperature. Thus, the design of frequency selective absorbers/emitters was found to be significantly affected with temperature range of operation of these structures.

Hypersonic vehicles, based on scramjet engines, have the potential to deliver inexpensive access to space when compared with rocket propulsion. The technology, however, is in its infancy and there is still much to be learned from fundamental studies.¶ Flows that represent the conditions inside a scramjet engine can be generated in ground tests using a free-piston shock tunnel and a combustor model. These facilities provide a convenient location for fundamental studies and principles learned during ground tests can be applied to the design of a full-scale vehicle.¶ A wide range of diagnostics have been used for studying scramjet flows, including surface measurements and optical visualisation techniques.¶ The aim of this work is to test the effectiveness of tunable diode laser absorption spectroscopy (TDLAS) as a scramjet diagnostic.¶ TDLAS utilises the spectrally narrow emission from a diode laser to probe individual absorption lines of a target species. By varying the diode laser injection current, the laser emission wavelength can be scanned to rapidly obtain a profile of the spectral line. TDLAS has been used previously for gas-dynamic sensing applications and, in the configuration used in this work, is sensitive to temperature and water vapour concentration.¶ The design of the sensor was guided by previous work. It incorporated aspects of designs that were considered to be well suited to the present application. Aspects of the design which were guided by the literature included the laser emission wavelength, the use of fibre optics and the detector used. The laser emission wavelength was near 1390 nm to coincide with relatively strong water vapour transitions. This wavelength allowed the use of telecommunications optical fibre and components for light delivery. Detection used a dual-beam, noise cancelling detector.¶ The sensor was validated before deployment in a low-pressure test cell and a hydrogen–air flame. Temperature and water concentration measurements were verified to within 5% up to 1550 K. Verification accuracy was limited by non-uniformity along the beam path during flame measurements.¶ Measurements were made in a scramjet combustor operating in a flow generated by the T3 shock tunnel at the Australian National University. Within the scramjet combustor, hydrogen was injected into a flame-holding cavity and the sensor was operated downstream in the expanded, supersonic, post-combustion flow. The sensor was operated at a maximum repetition rate of 20 kHz and could resolve variation in temperature and water concentration over the 3ms running time of the facility.¶ Results were repeatable and the measurement uncertainty was smaller than the turbulent fluctuations in the flow. The scramjet was operated at two fuel-lean equivalence ratios and the sensor was able to show differences between the two operating conditions. In addition, vertical traversal of the sensor revealed variation in flow conditions across the scramjet duct.¶ The effectiveness of the diagnostic was tested by comparing results with those from other measurement techniques, in particular pressure and OH fluorescence measurements, as well as comparison with computational simulation.¶ Combustion was noted at both of the tested operating conditions in data from all three measurement techniques.¶ Computation simulation of the scramjet flow significantly under-predicted the water vapour concentration. The discrepancy between experiments and simulation was not apparent in either the pressure measurements or the OH fluorescence, but was clear in the diode laser results.¶ The diode laser sensor, therefore, was able to produce quantitative results which were useful for comparison with a CFD model of the scramjet and were complimentary to information provided by other diagnostics.

Les objectifs de cette thèse se situent dans les domaines de l'élaboration et de la caractérisation du diamant dopé au bore ainsi que la réalisation par synthèse des différents éléments, de composants adaptés pour l'électronique de puissance. L'identification des défauts dans les couches homo-épitaxiées de diamant a été réalisée, et il à été en particulier montré que le pré-traitement plasma des substrats employés pour la croissance, peut se révéler comme une étape nécessaire dans le cadre de leurs éliminations. L'optimisation de la croissance de couches de diamant dopées au bore sur des substrats de type HPHT ou CVD a permis la synthèse de couches faiblement dopées dont les caractéristiques cristallines et électroniques étudiées par cathodoluminescence, et les propriétés de dopage et de transport analysées par C(V) et effet Hall, sont comparables à celles prédites par la théorie dans le cas de couches de grande pureté. La mise en oeuvre de diverses techniques permettant de définir l'architecture des composants a permis la fabrication de diverses diodes Schottky planaires ou mesa dont les propriétés électriques ont été étudiées pour mettre en évidence leurs caractéristiques, en particulier en termes de courant de fuite et tension de claquage supérieure à 1kV.

L'objectif de l'instrument hétérodyne MAMBO (Mars Atmosphere Microwave Brightness Observer) est d'étudier et de cartographier l'atmosphère et la surface de la planète Mars, à partir d'observations radiométriques dans le domaine submillimétrique, couvrant la bande de fréquence 320-350 GHz. Prévu initialement pour être embarqué sur la mission Mars Premier Orbiter du CNES en 2007, la définition de l'instrument ainsi que les caractéristiques de la tête de réception hétérodyne sont présentées en première partie.<br />Le thème principal de la thèse concerne l'étude et la réalisation d'un mélangeur subharmonique à diodes Schottky planaires, constitutif de la tête de réception hétérodyne de l'instrument. Un modèle numérique du mélangeur a été conçu en couplant des simulations électromagnétiques tridimensionnelles et des simulations de circuits non-linéaires. Cette méthode de simulation a permis d'optimiser les structures guidantes et le circuit du mélangeur pour élargir au maximum la bande de fréquence instantanée, et réduire la puissance d'Oscillateur Local (OL) nécessaire au fonctionnement optimal de la paire de diodes. Les performances mesurées du prototype réalisé sont en accord étroit avec les résultats de simulations, avec une sensibilité à l'état-de-l'art dans une bande de fonctionnement entre 300 et 360 GHz, et une puissance d'OL comprise entre 2,5 mW et 4 mW.<br />La dernière partie de la thèse est consacrée à l'étude des propriétés diélectriques de plusieurs échantillons de minéraux, roches et sables dans le domaine millimétrique (jusqu'à 170 GHz), dans le cadre scientifique de la cartographie de la surface de Mars par l'instrument MAMBO. Des mesures de la permittivité de ces matériaux par analyse vectorielle, et des mesures radiométriques faites en collaboration avec l'IAP (Institut de Physique Appliquée) de Berne (Suisse) sont présentées. L'objectif est de mettre en avant les différences d'émissivité des roches carbonatées par rapport à des roches riches en silicates.<br />Ce travail de thèse est également préparatoire aux futurs instruments radiométriques embarqués, pour l'observation de la terre aux longueurs d'onde submillimétriques. Dans cette perspective, le développement de récepteurs hétérodynes intégrant dans une même mécanique plusieurs éléments de mélange et de multiplication en fréquence permettra des avancées technologiques dans le domaine de l'imagerie Terahertz.