No description available.

A study of magnetization dynamics experiments in nanostructured materials using the rf susceptibility tunnel diode oscillator (TDO) method is presented along with a extensive theoretical analysis. An original, computer controlled experimental setup that measures the change in susceptibility with the variation in external magnetic field and sample temperature was constructed. The TDO-based experiment design and construction is explained in detail, showing all the elements of originality. This experimental technique has proven reliable for characterizing samples with uncoupled magnetic structure and various magnetic anisotropies like: CrO2 , FeCo/IrMn and Co/SiO2 thin films. The TDO was subsequently used to explore the magnetization switching in coupled magnetic systems, like synthetic antiferromagnet (SAF) structures. Magnetoresistive random access memory (MRAM) is an important example of devices where the use of SAF structure is essential. To support the understanding of the SAF magnetic behavior, its configuration and application are reviewed and more details are provided in an appendix. Current problems in increasing the scalability and decreasing the error rate of MRAM devices are closely connected to the switching properties of the SAF structures. Several theoretical studies that were devoted to the understanding of the concepts of SAF critical curve are reviewed. As one can notice, there was no experimental determination of SAF critical curve, due to the difficulties in characterizing a magnetic coupled structure. Depending of the coupling strength between the two ferromagnetic layers, on the SAF critical curve one distinguishes several new features, inexistent in the case of uncoupled systems. Knowing the configuration of the SAF critical curve is of great importance in order to control its switching characteristics. For the first time a method of experimentally recording the critical curve for SAF is proposed in this work. In order to overcome technological limitations, a new way of recording the critical curve by using an additional magnetic bias field was explored.

The newly discovered iron based superconductors have captivated the attention of the scientific community due to the unusual mechanism behind their superconductivity and their promise as the next generation high temperature superconductors. After a century of superconductor research, the physical mechanism behind high temperature superconductivity is still not understood. These new materials bring renewed hope in elucidating the pairing mechanism responsible with high temperature superconductors and achieving the ultimate goal of the field, room temperature superconductivity. Consequently, a deeper understanding of the intriguing properties of iron based materials is essential. A great deal about the pairing mechanism of Cooper electron pairs can be inferred from the symmetry of their pairing wave function or order parameter. One of the most involved probes for studying the pairing symmetry is the London penetration depth. The low temperature behavior of London penetration depth in superconductors is directly related to the density of states and provides a powerful tool for investigating low-lying quasiparticle energy and, for this very reason, can give valuable hints on superconducting gap symmetry. The work presented focuses on investigating the pairing symmetry in the Fe1+y(Te1−xSex) system using a radio-frequency tunnel diode oscillator (TDO) technique for precise measurements of the temperature dependence of their in-plane penetration depth. The TDO technique, based on an original concept involving the use of planar inductors in an novel configuration, was implemented on a dilution refrigerator to investigate a significant number of single crystal samples, with nominal Se concentrations of 36%, 40%, 43% and 45% respectively, down to temperatures as low as 50 mK. A systematic study together with a comprehensive analysis regarding the order parameter symmetry in the Fe1+y(Te1−xSex) system is presented. In many cases we found that London penetration depth shows an upturn below at low temperatures, indicative of a paramagnetic-type contribution. Also the low-temperature behavior of penetration depth is best described by a quadratic power law with no systematic dependence on the Se concentration. Most importantly, in the limit of T → 0, in some samples we observed a narrow region of linear temperature dependence, suggestive of nodes in the superconducting gap of Fe1+y(Te1−xSex).

Energy harvesting using rectennas for infrared radiation continues to be a challenge due to the lack of fast switching diodes capable of rectification at THz frequencies. Metal insulator metal diodes which may be used at 30 THz must show adequate nonlinearity for small signal rectification such as 30 mV. In a rectenna assembly, the voltage signal received as an output from a single nanoantenna can be as small as ~30µV. Thus, only a hybrid array of nanoantennas can be sufficient to provide a signal in the ~30mV range for the diode to be able to rectify around 30THz. A metal-insulator-metal diode with highly nonlinear I-V characteristics is required in order for such small signal rectification to be possible. Such diode fabrication was found to be faced with two major fabrication challenges. The first one being the lack of a precisely controlled deposition process to allow a pinhole free insulator deposition less than 3nm in thickness. Another major challenge is the deposition of a top metal contact on the underlying insulating thin film. As a part of this research study, most of the MIM diodes were fabricated using Langmuir Blodgett monolayers deposited on a thin Ni film that was sputter coated on a silicon wafer. UV induced polymerization of the Langmuir Blodgett thin film was used to allow intermolecular crosslinking. A metal top contact was sputtered onto the underlying Langmuir Blodgett film assembly. In addition to material characterization of all the individual films using IR, UV-VIS spectroscopy, electron microscopy and atomic force microscopy, the I-V characteristics, resistance, current density, rectification ratio and responsivity with respect to the bias voltage were also measured for the electrical characterization of these MIM diodes. Further improvement in the diode rectification ratio and responsivity was obtained with Langmuir Blodgett films grown by the use of horizontally oriented organic molecules, due to a smaller tunneling distance that could be achieved in this case. These long chain polymeric molecules exhibit a two-dimensional molecular assembly thereby reducing the tunneling distance between the metal electrodes on either side of the insulating layer. Rectification ratios as high as 450:1 at ±200mV were obtained for an MIM diode configuration of Ni-LB films of Arachidic Acid films-(Au/Pd). The bandwidth of the incident radiation that can be used by this rectenna assembly is limited to 9.5% of 30THz or ±1.5THz from the center frequency based on the antenna designs which were proposed for this research. This bandwidth constraint has led to research in the field of frequency selective emitters capable of providing a narrowband emission around 30THz. Several grating structures were fabricated in the form of Ni-Si periodic arrays, in a cleanroom environment using photolithography, sputtering and deep reactive ion etching. These frequency selective samples were characterized with the help of focusing optics, monochromators and HgCdTe detectors. The results obtained from the emission spectra were utilized to calibrate a simulation model with Computer Simulation Technology (CST) which uses numerous robust solving techniques, such as the finite element method, in order to obtain the optical parameters for the model. Thereafter, a thorough analysis of the different dimensional and material parameters was performed, to understand their dependence on the emissivity of the selective emitter. Further research on the frequency selectivity of the periodic nano-disk or nano-hole array led to the temperature dependence of the simulated spectra, because the material parameters, such as refractive index or drude model collision frequency, vary with temperature. Thus, the design of frequency selective absorbers/emitters was found to be significantly affected with temperature range of operation of these structures.

In this study, we explore ultra-thin insulators of organic and inorganic composition and their potential role as high-speed rectifiers. Typical applications for these structures include IR sensing, chemical detection, high speed logic circuits, and MEMS enhancements. While there are many elements in the functional group required to create a rectifying antenna (rectenna), the primary thrust of this work is on the rectifier element itself. To achieve these research goals, a very good understanding of quantum tunneling was required to model the underlying phenomenon of charge conduction. The development of a multi-variable optimization routine for tunneling prediction was required. MATLAB was selected as the programming language for this application because of its flexibility and relative ease of use for simulation purposes. Modeling of physical processes, control of electromechanical systems, and simulation of ion implantation were also to be undertaken. To advance the process science, a lithographic mask set was made which utilized the information gleaned from the theoretical simulations and initial basic experiments to create a number of diode test structures. This came to include the creation of generations of mask sets--each optimizing various parameters including testability, alignment, contact area, device density, and process ease. Following this work, a complete toolset for the creation of "soft" contact top metals was required and needed to be developed. Ultra-flat substrates were needed to improve device reliability and measurement consistency. The final phase of research included measurement and characterization of the resultant structures. Basic DC electrical characterization of the organic monolayers would be accomplished using metal probes. Statistical studies of reliability and process yield could then easily be carried out. The rectification ratio (ratio of forward over reverse current at a given voltage magnitude) was found to be a reliable indicator of diode performance in the low frequency ranges. This would mean writing additional code in MATLAB to assist in the automatic analysis for the acquired IV curves. Progression to AC / RF measurements of tunneling performance was to be accomplished using relatively low frequencies (below 100 MHz). Finally, the organic films themselves would be studied for consistency, impedance characteristics, incidence of defects, and thickness by a variety of metrology techniques. This project resulted in a number of advances to the state-of-the-art in nanofabrication using organic monolayers. A very detailed review of the state of alkanethiol research was presented and submitted for publication. A single pot technique was developed to softly deposit metal nanoparticles onto a charged surface with a high degree of control. A temporary contact method using pure, sub-cooled gallium liquid metal was used to probe organic monolayers and plot IV curves with better understanding of surface states than before. An inkjet printer solution was devised for top contact printing which involved the development and production of a work-up free insulator ink which is water soluble and printable to resolutions of about 25 um. Localized selective chemical crosslinking was found to reduce printed ink solubility following deposition. Future work will likely include additional exploration of crosslinkable Langmuir-Blodgett films as MIM insulators. Stability and testing will hinge on the fabrication of enclosures or packages for environmental isolation.

In this research, Ni–NiOx–Cr and Ni–NiOx–ZnO–Cr metal-insulator-metal (MIM) junction based tunnel diodes have been investigated for the purpose of a wide-band detector. An MIM diode has a multitude of applications such as harmonic mixers, rectifiers, millimeter wave and infrared detectors. Femtosecond-fast electron transport in MIM tunnel diodes also makes them attractive for energy-harvesting devices. These applications require the tunnel diodes to have high current-asymmetry and non-linear current-voltage behavior at low applied voltages and high frequencies. Asymmetric and non-linear characteristics of Ni–NiOx-Cr MIM tunnel diodes were enhanced in this research by the addition of ZnO as a second insulator layer in the MIM junction to form metal-insulator-insulator-metal (MIIM) structure. Electrical characteristics were studied in a voltage range of for the single-insulator Ni–NiOx–Cr and double-insulator Ni–NiOx–ZnO–Cr tunnel diodes. Since the electrical characteristics of the diode are sensitive to material selection, material arrangement, thickness, deposition techniques and conditions, understanding the diode behavior with respect to these factors is crucial to developing a robust diode structure. Thus, ZnO insulator layer in MIIM junction was deposited by two different techniques: sputtering and atomic layer deposition (ALD). Also, the optical properties were characterized for the sputter deposited NiOx insulator layers by ellipsometry and the impact of annealing was explored for the NiOx optical properties. The Ni–NiOx–Cr MIM tunnel diodes provide low resistance but exhibit a low (~1) current-asymmetry. Asymmetry increased by an order of magnitude in case of Ni–NiOx–ZnO–Cr MIIM tunnel diode. The sensitivity of the MIM and MIIM diodes was 11 V-1 and 16 V-1, respectively. The results suggest that the MIIM diode can provide improved asymmetry at low voltages. The tunneling behavior of the device was also demonstrated in the 4-298K temperature range. It is hypothesized that the improved performance of the bilayer insulator diode is due to resonant tunneling enabled by the second insulator. Finally, the MIM and MIIM devices were investigated for wide-band detection up to 50GHz (RF) and 0.3THz (optical).

No description available.

Static techniques to measure different magnetic properties of coupled magnetic nanostructured systems is researched and documented with an extensive analysis of the tunnel diode oscillator (TDO). The VSM was used to obtain the major hysteresis loop for the samples and the TDO was used to measure the magnetic susceptibility. The magnetic susceptibility was employed to conceive the static critical curve. The thesis describes both equipments, VSM and TDO, that were used to obtain data for our experiments. Albeit a more comprehensive outlook on the TDO is provided. The theoretical functionality of TDO, previous successful applications for experiments, and the physical setup in the laboratory is explored. The novel addition of the double Helmholtz coil in this setup is described. The viability of replacement of the big electromagnet and the advantages of the Helmholtz coil are discussed. Magnetization dynamics in a series of FeCoB/Ru/FeCoB synthetic antiferromagnetic samples were investigated via reversible susceptibility measurements acquired through the TDO. The major hysteresis loop generated by the VSM were used to calculate the coercivity and magnetic saturation of the sample. The VSM and TDO were subsequently used to explore the magnetization switching in a di_erent coupled magnetic system, the exchange bias samples. A range of NiFe/FeMn samples were studied with varying thickness of the antiferromagnetic layer.

In dieser Arbeit wurde eine Tandemsolarzelle aus III-V-Halbleitern auf der Gitterkonstanten von InP mit einem neuartigen Tunnelkontakt entwickelt. Für die Entwicklung der monolithischen Präparation wurden insbesondere kritische Hetero-Grenzflächen im Bereich des Tunnelkontaktes mit oberflächensensitiven Messmethoden untersucht. Die Tandemsolarzelle bestand aus Einzelsolarzellen mit Absorberschichten aus InGaAs (E_g=0,73eV) und InGaAsP (E_g=1,03eV), deren Serienverschaltung mit einem Tunnelkontakt erfolgte, der aus einer n-InGaAs- und einer p-GaAsSb-Schicht bestand. Die Halbleiterschichten wurden mit metallorganischer Gasphasenepitaxie (MOCVD) einkristallin auf einem InP(100)-Substrat gitterangepasst präpariert. Insbesondere wurde der Einfluss der Präparation von InGaAs-Oberflächen auf die Schärfe der InGaAs/GaAsSb-Grenzfläche in-situ mit RAS und nach einem kontaminationsfreien Transfer ins UHV mit UPS, XPS und LEED untersucht. Dabei konnten erstmals drei verschiedene Rekonstruktionen der MOCVD-präparierten InGaAs-Oberfläche beobachtet werden, die von der Heiztemperatur abhängig waren: eine As-reiche (4x3)-, eine InGa-reiche (2x4)- und eine ebenfalls InGa-reiche (4x2)/c(8x2)-Rekonstruktion. Danach erfolgte die Untersuchung des Wachstums von dünnen GaAsSb-Schichten auf diesen drei InGaAs-Oberflächen. Anhand des Sb/As-Verhältnisses im GaAsSb konnte die Präparation auf der (4x3)-rekonstruierten Oberfläche als die schlechteste beurteilt werden. Abschließend wurden Tandemsolarzellen mit verschieden dicken Absorberschichten der InGaAsP-Topzelle gefertigt. Der höchste Wirkungsgrad einer hier hergestellten Tandemsolarzelle betrug 7,3% unter einem gefilterten Sonnenspektrum, das eine GaAs-basierte Tandemsolarzelle mit großen Bandlücken (E_g>1,4eV) simulierte. Die Kombination einer solchen Tandemsolarzelle mit der hier entwickelten InGaAs/InGaAsP-Tandemsolarzelle hat das Potential, für konzentriertes Sonnenlicht eine Konversionseffizienz von deutlich über 40% zu erreichen. / A monolithic low band gap tandem solar cell made up of III-V semiconductors lattice matched to InP and including a novel tunnel junction was developed. Critical hetero interfaces were investigated in detail, in particular the ones related to the tunnel diode. The tandem solar cell was composed of single junction cells with InGaAs (E_g=0.73eV) and InGaAsP (E_g=1.03eV) absorber layers. The serial connection of the subcells was realized by using a tunnel junction including n-InGaAs and p-GaAsSb layers. Metal organic vapor phase epitaxy (MOVPE) was used to prepare the III-V layers lattice matched on InP(100) substrates. In particular, the influence of the preparation of the InGaAs surface on the sharpness of the InGaAs/GaAsSb interface was investigated in-situ by Reflection Anisotropy Spectroscopy (RAS). After a contamination free transfer to UHV the samples were analyzed by UPS, XPS and LEED. Three different surface reconstructions of MOVPE-prepared InGaAs were determined for the first time: an As-rich (4x3)-, an InGa-rich (2x4) and an also InGa-rich (4x2)/c(8x2)-reconstructed surface. In a second step, the growth of thin GaAsSb layers on the three different InGaAs surfaces was studied. The Sb/As-ratio in the GaAsSb layer indicated that the preparations on the InGa-rich surfaces result in a sharper interface. Finally, tandem solar cells with different thicknesses for the absorber layer of the top cell were produced. The highest efficiency obtained for the tandem solar cell was 7.3%, when measured under a filtered solar spectrum to simulate the operation below a GaAs-based tandem solar cell (E_g>1.4eV). The combination of a high band gap tandem solar cell with the InGaAs/InGaAsP tandem solar cell developed here is estimated to reach under a concentrated solar spectrum a total efficiency of more than 40% after further optimization steps.

Abstract After the discovery of topological insulators (TIs), it has come to be widely recognized that topological states of matter can actually be widespread. In this sense, TIs have established a new paradigm about topological materials. Recent years have seen a surge of interest in topological semimetals, which embody two different ways of generalizing the effectively massless electrons to bulk materials. Dirac and, particularly, Weyl semimetals should support several transport and optical phenomena that are still being sought in experiments. A number of promising experimental results indicate superconductivity in members of half-Hesuler semimetals which realize the mixing singlet and triplet pairing symmetry. We now turn to results we got through the work on topological semimetals. This work presents quantum high field transports on Dirac and Weyl topological semimetals including Sr1-yMn1-zSb2 (y, z < 0.1), YbMnBi2 and TaP. In case of Sr1-yMn1-zSb2 (y, z < 0.1), massless relativistic fermion was reported with m* = 0.04-0.05m0. This material presented a ferromagnetic order for in 304 K < T < 565 K, but a canted antiferromagnetic order with a net ferromagnetic component for T < 304 K. These are considered striking features of Dirac fermions For YbMnBi2, we reported the unusual interlayer quantum transport behavior in magnetoresistivity, resulting from the zeroth LL mode observed in this time reversal symmetry breaking type II Weyl semimetal. Also, for Weyl semimetal TaP the measurements probed multiple Fermi pockets, from which nontrivial π Berry phase and Zeeman splitting were extracted. Our ultra-low penetration depth measurements on half-Heuslers YPdBi and TbPdBi revealed a power- law behavior with n= 2.76 ± 0.04 for YPdBi samples and n=2.6 ± 0.3 for TbPdBi sample. We may conclude the exponent n > 2 implies nodless superconducting gap in our samples. Also, we found that despite the increase in magnetic correlations from YPdBi to TbPdBi, superconductivity remains robust in both systems which indicates that AF fluctuations do not play a major role in superconducting mechanism.