Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.

No description available.

Dans le cadre de la réduction des dimensions des technologies CMOS, le module de jonction apparaît comme un point bloquant pour l’amélioration des performances. En particulier, la hauteur de barrière entre le siliciure et le silicium limite le courant passant du transistor. Cette thèse adresse spécifiquement la problématique du contrôle de la hauteur de barrière suivant deux directions. D’une part, nous étudions l’intérêt d’une modification du métal formant le siliciure. D’autre part, nous évaluons le potentiel des techniques de ségrégation de dopants pour la modulation de la hauteur de barrière.Dans un premier temps, nous démontrons les difficultés liées à l’intégration des siliciures de type n (ErSi). Par ailleurs, nous mettons en évidence le fort potentiel du siliciure de platine (PtSi). En effet, ce matériau présente une stabilité thermique supérieure au siliciure de référence (NiSi) et montre une faible barrière à l’injection de trous. De plus, nous montrons que les techniques de ségrégation de dopants permettent d’obtenir de faibles hauteurs de barrières pour l’injection des électrons. Le PtSi apparaît donc comme un candidat à fort potentiel pour les futures technologies CMOS.Après avoir montré les inconvénients majeurs posés par l’intégration auto-alignée du PtSi grâce au procédé standard par eau régale, nous proposons une nouvelle méthode de retrait sélectif basée sur la transformation du métal non réagi en un germaniure facilement retiré par des chimies conventionnelles.En conclusion, nous intégrons le PtSi dans un procédé de fabrication industriel afin de démontrer des performances électriques à l’état de l’art des technologies CMOS les plus avancées. / In the context of the CMOS technology scaling, the junction module appears as being critical for the device performance improvement. Indeed, the Schottky barrier height between the silicide and the silicon is a main limitation for the on-state current increase. This thesis addresses the problem of barrier height control following two main paths. On the one hand, we study the impact of a modification of the metal forming the silicide. On another hand, we evaluate the potential of barrier height modulation using dopant segregation techniques.The difficulties related to the integration of n-type silicides (e.g. ErSi) are highlighted as well. Also, the strong potential of the PtSi is demonstrated. This silicide intrinsically shows a better thermal stability as compared to the reference silicide (NiSi), and has a low barrier height to holes. Moreover, we implement a method using dopant segregation techniques that allow us to reach low barrier heights to electrons. PtSi thus appears as a promising candidate for future CMOS technologies.However, we underline the strong issues related to the self-aligned integration of PtSi using the aqua regia standard process. We have developed during this thesis a new selective etching method based on the transformation of the unreacted metal into a germanide, easily etchable in conventional chemistries, that allows a safe integration.As a conclusion, we integrate PtSi in an industrial process flow, and we demonstrate that electrical performance are in-line with state-of-the-art CMOS technologies.

Dans cette thèse, nous nous sommes intéressés à l'étude à basse température de dispositifs en silicium de taille nanométrique. Dans ces dispositifs, il est possible de faire passer le courant électrique à travers un nombre réduit de dopants. Nous avons étudié plus spécifiquement le cas de deux dopants en séries, dont les potentiels électrostatiques sont contrôlés indépendamment par deux tensions de grille. En régime de transport électronique statique, il est possible d'effectuer une spectroscopie des niveaux électronique des dopants. On mesure la séparation des deux premiers états de dopants phosphore, qui est proche de 10 meV, alors qu'elle est de 11,7 meV pour des dopants dilués dans un cristal massif. Cette différence s'explique par la proximité des dopants avec une interface avec de l'oxyde de silicium. En régime dynamique, lorsque les niveaux des dopants sont modulés par un signal périodique, on observe qu'un courant est généré par le dispositif. L'évolution du courant en fonction des tensions de grille est simulée en prenant en compte les couplages tunnels du système. À haute fréquence, lorsque l'on observe la quantification d'énergie électromagnétique échangée avec le système, on reproduit le courant mesuré en fonction de l'amplitude du signal appliqué sur les grilles. Cette mesure permet de mettre en évidence la cohérence d'un électron partagé sur deux dopants. / In this thesis, we studied low temperature silicon devices of nanometer size. In these devices, an electric current can flow through a small number of dopants. We studied the case of two dopants in series which electrostatic potentials are controlled independently by two gate voltages. In static regime, it is possible to perform spectroscopy of electronic doping levels. We measure an energy separation of the first two states for the phosphorus dopants around 10 meV, while this separation is 11.7 meV for dopants diluted in a bulk crystal. This difference is explained by the proximity of dopants with a silicon oxide interface. When the levels of the dopants are modulated by a periodic signal a current is generated by the device. The evolution of the current versus gate voltages is simulated by taking into account the tunnel couplings of the system. At high frequency, when we observe the quantification of electromagnetic energy exchanged with the system, the measured current as a function of the amplitude of the signal applied to the gates is described. This is an experimental evidence of the coherence of an electron shared by two dopants.

Alors que le développement industriel des technologies CMOS-SOI aborde le cap des longueurs de grille inférieures à 30nm, l’optimisation du module source/drain est identifié comme l’un des verrous technologiques fondamentaux afin d’atteindre le niveau de performance spécifié dans la feuille de route ITRS. Afin d’adresser cette difficulté, une solution consiste à remplacer le module de jonction source/drain conventionnel par un contact métallique de type Schottky dont la hauteur de barrière doit être modulée à la baisse afin de réduire la résistance spécifique de contact. La mise en œuvre des techniques de ségrégation de dopants à basse température a été identifiée comme une technique efficace de réduction de barrière Schottky. D’autre part, l’application de contraintes mécaniques est également connue pour induire une réduction de barrière Schottky par levée de dégénérescence aux minima de bandes. L’objet principal de cette thèse est donc d’étudier la possibilité de cumuler ces deux effets, en particulier dans le cas d’un substrat SOI en tension biaxiale. Les caractérisations morphologiques et électriques réalisées au cours de cette thèse montrent que l’utilisation du siliciure de platine est judicieuse de part sa faible hauteur de barrière Schottky aux trous (250meV). Nous avons également démontré que l’utilisation simultanée des deux méthodes d’abaissement de barrière précédemment citées permet de réduire ce paramètre de 145 meV. Ce travail de thèse a démontré que l’intégration du siliciure de platine combiné à l’utilisation de la ségrégation de dopant et de substrat contraint permettait d’obtenir des jonctions Schottky de type p et n à faible hauteur de barrière. / While the CMOS-SOI technologies development is reaching the sub 30-nm gate length era, the Source/Drain module optimization is identified as a one of the biggest challenge to be solved in order to satisfy the ITRS specification. For the sake of addressing this difficulty, one solution consists in replacing the conventional Source/Drain junction module by Schottky contacts. However, the Schottky Barrier Height has to be lowered in order to reduce the contact resistance to the minimum. The dopant segregation implementation has been identified as an efficient method to reduce the Schottky Barrier Height. The mechanical stress is also known to induce a Schottky Barrier height lowering due to degeneracy breaks at silicon sub bands minima. The main objective of this thesis is to assess the possibility of cumulating these two effects, in particular in the case of a biaxialy strained substrate. Morphological and electrical characteristics showed that the use of platinum silicide is relevant for the low Schottky Barrier Height to hole (250meV). In addition, we demonstrated that the combined implementation of the two aforementioned Schottky Barrier height lowering methods leads to a reduction equal to 145meV. This thesis work illustrates that platinum silicide integration combined with the use of dopant segregation and advanced strained substrates provide Schottky junctions with a low barrier height for both p- and n-type.

Indiana University-Purdue University Indianapolis (IUPUI) / Atomistic simulations are used in this project to study the deformation mechanism of polycrystalline and bicrystal of pure Al and Al-Mg alloys. Voronoi Tessellation was used to create three-dimensional polycrystalline models. Monte Carlo and Molecular Dynamics simulations were used to achieve both mechanical and chemical equilibrium in all models. The first part of the results showed improved strength, which is included the yield strength and ultimate strength in the applied tensile loading through the addition of 5 at% Mg to nanocrystalline aluminum. By viewing atomic structures, it clearly shows the multiple strengthening mechanisms related to doping in Al-Mg alloys. The strength mechanism of dopants exhibits as dopant pinning grain boundary (GB) migration at the early deformation stage. At the late stage where it is close to the failure of nanocrystalline materials, Mg dopants can stop the initiation of intergranular cracks and also do not let propagation of existing cracks along the GBs. Therefore, the flow stress will improve in Al-Mg alloy compared to pure Al. In the second part of our results, in different bicrystal Al model, ∑ 3 model has higher strength than other models. This result indicates that GB structure can affect the strength of the material. When the Mg dopants were added to the Al material, the strength of ∑5 bicrystal models was improved in the applied shear loading. However, it did not happen for ∑ 3 model, which shows Mg dopants cannot affect the behavior of this GB significantly. Analysis of GB movements shows that Mg dopants stopped GBs from moving in the ∑ 5 models. However, in the ∑ 3 GB, displacement of grain boundary planes was not affected by Mg dopants. Therefore, the strength and flow stress are improved by Mg dopants in ∑ 5 Al GBs, not in the ∑ 3 GBs.

<p>I want delay publication of my dissertation until April 30 2013. Thanks.</p> / <p>Strontium titanate (SrTiO₃) has a wide range of applications in the electronic industry and attracts growing world-widely interest recently because of novel discoveries at its surfaces, interfaces and with selected dopants. The understanding of some of the structural properties of SrTiO₃ and its optical properties have been lagging due to limited characterization techniques available to study single monolayers and dopants in this material.</p> <p>In the present thesis, pure SrTiO₃ single crystals with (2x1) and c(4x2) surface patterns were synthesized and samples (Pr, Al) doped SrTiO₃ were prepared through ion implantation. The atomic and electronic structures of these samples were investigated by various high-resolution imaging and spectroscopic techniques available in an aberration-corrected transmission electron microscope. Particularly, the direct imaging of individual light atoms and vacancies within a bulk material containing heavier elements was demonstrated for the first time via the STEM-annular dark-field (ADF)/annular bright-field (ABF) images. In addition, the first electron energy-loss spectroscopy (EELS) 2-dimensional maps of dopants located in a lattice were obtained. These results provided a solid foundation regarding the mechanism of red light emission in doped SrTiO₃. More importantly, a new experimental approach allowing the effective extraction of weak EELS signals from low-dimensional defects was developed and successfully applied to understand the chemical state and coordination of Ti cations within a single monolayer on a reconstructured SrTiO₃surface and the local defect configurations of injected Pr⁺ and Al⁺ ions within SrTiO₃ single crystals.</p> / Doctor of Philosophy (PhD)

<div>Atomistic simulations are used in this project to study the deformation mechanism of polycrystalline and bicrystal of pure Al and Al-Mg alloys. Voronoi Tessellation was used to create three-dimensional polycrystalline models. Monte Carlo and Molecular</div><div>Dynamics simulations were used to achieve both mechanical and chemical equilibrium in all models. The first part of the results showed improved strength, which is included the yield strength and ultimate strength in the applied tensile loading through the addition of 5 at% Mg to nanocrystalline aluminum. By viewing atomic structures, it clearly shows the multiple strengthening mechanisms related to doping in Al-Mg alloys. The strength mechanism of dopants exhibits as dopant pinning grain boundary (GB) migration at the early deformation stage. At the late stage where it is close to the failure of nanocrystalline materials, Mg dopants can stop the initiation of intergranular cracks and also do not let propagation of existing cracks along the GBs. Therefore, the flow stress will improve in Al-Mg alloy compared to pure Al. In the second part of our results, in different bicrystal Al model, Σ 3 model has higher strength than other models. This result indicates that GB structure can affect the strength of the material. When the Mg dopants were added to the Al material, the strength of sigma 5 bicrystal models was improved in the applied shear loading. </div><div><br></div><div>However, it did not happen for Σ 3 model, which shows Mg dopants cannot affect the behavior of this GB significantly. Analysis of GB movements shows that Mg dopants stopped GBs from moving in the Σ 5 models. However, in sigma 3 GBs, displacement of grain boundary planes was not affected by Mg dopants. Therefore, the strength and flow stress are improved by Mg dopants in Σ 5 Al GBs, not in the Σ 3 GB.</div>

Carbon-based materials have attracted great attention over past few years in hydrogen storage applications. In particular, nanofibrous carbon working as support for sodium alanate exhibits great improvement in the kinetics of H2 releasing/uptaking. Herein, we used graphene with various dopants to simulate the carbon materials and performed a periodic density functional theory study on the impact of the modifications on the hydrogen interaction in the supported sodium alanate. Our results showed that the impact of various defects and dopants can be categorized in groups: (i) Pristine graphene and pentagon-heptagon (5-7) pair defective graphene, as well as nitrogen and sulfur doped graphene do not promote H2 formation. (ii) Carbon vacancies, as well as boron and chlorine doped systems, cause instantaneous H2 formation. (iii) Oxygen, phosphor and fluorine doped graphene led to the formation of a meta-stable di-hydrogen state with a H-H distance of ~ 0.96 Å. In addition, we confirmed the importance of van der Waals interaction in our system.

Yes / Brushite, or Dicalcium phosphate dihydrate (CaHPO4⋅2H2O), is a well-known calcium phosphate (CaP) found in mineralized tissues and is utilized in medical treatment, particularly in bone powder for bone repair. Brushites with Zn2+ and Ag + ions concentration were synthesized in an aqueous solution using the conventional precipitation procedure. The synthesized brushites were characterized using techniques such as Fourier Transform Infrared Spectroscopy (FTIR), Powder X-ray diffraction (PXRD), Scanning Electron Microscopy (SEM), and bioassays were carried out to evaluate their antibacterial and antifungal activities. The alterations in PXRD and FTIR peak locations demonstrated that zinc and silver ions were effectively inserted into the brushite crystals. Initial tests revealed that the powders were innocuous, which make them potentially beneficial for mineralized tissue engineering. These brushites exhibited remarkable antimicrobial activities. Zn-doped brushite completely controlled the growth of fungi namely Macrophomina phaseolina and Sclerotium rolfsii at a concentration of 0.0039 mg mL-1 while Ag-doped brushite completely arrested the growth of these fungi at 0.0312 and 0.0039 mg mL-1, respectively. Likewise, both the brushite exhibited remarkable antibacterial activity against Bacillus thuringiensis and moderate activity against Escherichia coli. Brushite compounds coupled with active metal ions, notably Ag+ and Zn2+, demonstrated promise as a distinct class of reactive materials for bone-related applications.