Electrical doping of organic semiconductors with molecular oxidants (p-type) or reductants (n-type) can greatly improve charge injection and conductivity in devices. Simple one electron reductants that are capable of reducing most electron-transport materials will inevitably also be sensitive to reaction with oxygen. Coupling electron transfer step with bond breaking/ making processes in principle can address this problem. The rhodocene dimer and related ruthenium and iridium dimeric sandwich compounds have been discussed as example of such n-dopants, reducing a variety of organic semiconductors to the corresponding radical anions, while forming monomeric cations. This class of n-dopants can be used in both vapor- and solution-processed devices, and the dopant monomer cations are large and, therefore, fairly stable with respect to diffusion. This thesis focused on increasing the utility of these and related electrical dopants. In order to reduce various electron-transport materials with lower electron affinities, which are frequently used in OLEDs, strategies and limitations to develop stronger n-dopants is discussed. Controlling the kinetics of the dopant / semiconductor reactions to allow film processing in ambient conditions, with activation of the dopants being carried out thermally or photochemically in subsequent steps is presented. An approach to covalently tether monomeric cations with themselves, surfaces or electron-transport materials is described. Electrochemical studies that further our understanding of dopant kinetics and thermodynamics is described. The dimer dopant chemistry is also compared to the corresponding hydride-reduced complexes of the cations and manganese tricarbonyl benzene dimer. The directions for future dopant design with improved properties is discussed.

Les matériaux ferroélectriques de type pérovskite PbTiO3 et LiNbO3 présentent un grand intérêt en raison de l'existence de phase ferroélectrique, et la possibilité de modifier leurs propriétés physiques par de nombreuses substitutions ioniques. De plus ces matériaux présentent des propriétés physiques, diélectriques, électro-optiques, optiques non linéaires et électroniques performantes, qui en font des matériaux très utilisés dans de nombreuses applications dans différents domaines. Le travail de cette thèse concerne la synthèse et l'étude des propriétés physicochimiques des pérovskites de type PT:Mg et LN:Mg ou LN:Ho sous forme de poudres, céramiques et le tirage de fibres cristallines à partir de ces poudres. L'intérêt de notre travail, a porté sur l'étude du rôle des dopants, de leur incorporation dans la structure cristalline hôte et l'étude de leurs effets sur les propriétés physiques et fonctionnelles. Les résultats obtenus montrent que le Mg affecte la quadracité du PT, il intègre le site A avant 10% en Mg au-delà, il intègre les deux sites A et B. L'analyse diélectrique montre que le composé conserve le comportement d'un ferroélectrique classique en montée en température, par contre en descente, le composé présente un comportement relaxeur. Les caractérisations structurales montrent que l'incorporation du dopant (Mg ou Ho) dans la maille du LN induit une déformation du réseau cristallin. Jusqu'à 5% mol, le Mg substitut le Li (site A), réduit le nombre des défauts intrinsèques (Nb en antisite) et diminue l'intensité de la photoluminescence. Au-delà, il intègre les deux sites A et B. l'holmium incorpore le LN et n'affecte pas l'intensité de la photoluminescence, il intègre la maille en site interstitiel. Nous avons tiré des fibres cristallines de LN et LN:Ho2% par la méthode µ-PD, les fibres obtenues, de longueur de quelques centimètres avec un diamètre inférieur au mm. La caractérisation de ces fibres montre que sont de LN et leurs propriétés peuvent être améliorées par des traitements thermiques / The ferroelectric materials of the perovskite type PbTiO3 and LiNbO3 have of great interest because of the existence of ferroelectric phase, and the possibility of modifying their physical properties by many ionic substitutions. In addition, these materials have physical properties, dielectric, electro-optical, dielectrics, non-linear optical and the performing electronics, who make materials very much used in many applications in various fields. The work of this thesis concerns the synthesis and study of physicochemical properties of perovskites type PT: Mg and LN: Mg or LN: Ho in the form of powders, ceramics and pulling crystalline fibers from these powders. The interest of our work, has focused on studying the role of dopants, the incorporation into the host crystal structure and study of their effects on the physical and functional properties. The results show that Mg affects the quadracité PT, it integrates the Site before 10% Mg, beyond it integrates the two sites A and B. The dielectric analysis shows that the compound retains the behavior of a classical ferroelectric in temperature mounted, for against by descent, the compound exhibits a relaxor behavior. The structural characterizations show that the incorporation of the dopant (Mg or Ho) in the stitch of LN induced a deformation of the crystal stitch. Up to 5% mol the Mg substitute Li (Site A), reduced the number of intrinsic defects (Nb antisite) and decreases the intensity of the photoluminescence. Beyond, it integrates the two sites A and B. holmium incorporates the LN and does not affect the intensity of the photoluminescence, it integrates the stitch in interstitial site. We pulled the crystalline fibers LN and LN: Ho2% by the µ-PD method, the fibers obtained, a few centimeters in length with a diameter less than to mm. The characterization of these fibers shows that are the LN and their properties can be improved by the heat treatments

[pt] Neste trabalho foram obtidos filmes de grafeno usando um precursor sólido, a Trifenilfosfina, num processo de deposição química na fase vapor em alto vácuo (HVCVD). A microscopia eletrônica de Varredura permitiu observar a presença de pequenas regiões inomogêneas na superfície das amostras crescidas. Estas regiões foram observadas na microscopia antes e após o processo de transferência da folha de cobre para o substrato de silício oxidado. Medidas realizadas por XPS permitiram comprovar a incorporação de fósforo no filme crescido. A espectroscopia Raman foi usada para determinar a temperatura de trabalho adequada no sistema de crescimento. A presença de grafeno foi confirmada em todas as amostras, mas observou-se que, em geral, a quantidade de defeitos nas amostras cresceu com o aumento da massa do precursor utilizado no crescimento. Os resultados obtidos são discutidos à luz de recentes trabalhos teóricos que tratam do uso da técnica Raman no estudo de defeitos em grafeno. / [en] In this work graphene films were obtained using a solid precursor, Triphenylphosphine, by chemical vapor deposition in high vacuum (HVCVD). Scanning electron microscopy allowed to observe the presence of small inhomogeneus regions on the surface of the grown samples. These regions were observed in the microscopy before and after the transfer process from the copper foil to silicon oxidized wafer. XPS measurements checked the incorporation of phosphorus in the film grown. Raman spectroscopy was used to determine the suitable working temperature in the growth system. The presence of graphene was confirmed in all samples, but it was observed that in general, the amount of defects in the samples increased with increasing the mass of the precursor used in growth. The results are discussed in light of recent theoretical works that address the use of Raman technique in the study of defects in graphene.

Durant ces dernières années, l’apparition de nouvelles architectures (FDSOI, FinFETs ou NW-FETs) et l’utilisation de nouveaux matériaux (notamment SiGe) ont permis de repousser les limites des performances des dispositifs MOS et de contourner l’effet canal court inhérent à la miniaturisation des composants. Cependant, pour toutes ces nouvelles architectures, la résistance de contact se dégrade au fil des nœuds technologiques. Celle-ci dépend fortement de deux paramètres physiques : la concentration de dopants actifs proches de la surface du semi-conducteur et de la hauteur de barrière Schottky du contact siliciuré. De multiples procédés avancés ont été proposé pour améliorer ces deux paramètres physiques (pré-amorphisation, recuit laser, ségrégation de dopants, etc…). Afin d’optimiser les conditions expérimentales de ces nouvelles techniques de fabrication, il est primordial de pouvoir caractériser avec fiabilité leur impact sur les deux grandeurs physiques citées. Dans le cadre de cette thèse, deux thématiques dédiées à l’étude de chacun des paramètres sont abordées, explicitant les méthodes de caractérisation développées ainsi que des exemples concrets d’applications. La première partie concerne l’étude de la concentration de dopants actifs proches de la surface du semi-conducteur. Dans cet axe, nous avons mis en place une méthode d’Effet Hall Différentiel (DHE). Cette technique combine gravures successives et mesures par effet Hall conventionnel afin d’obtenir le profil de concentration de dopants actifs en fonction de la profondeur. Nous avons développé et validé une méthode de gravure chimique et de mesure électrique pour des couches ultra-minces de SiGe et de Si dopées. Les profils de concentration générés ont une résolution en profondeur inférieure à 1 nm et ont permis d’étudier de façon approfondie dans les premiers nanomètres proches de la surface de couches fabriquées grâce à des techniques d’implantation et de recuit avancées comme par exemple, la croissance en phase solide activée par recuit laser. La deuxième partie porte sur la mesure de hauteurs de barrière Schottky pour des contacts siliciurés. Durant cette étude, nous avons transféré une technique se basant sur des diodes en tête bêche pour caractériser l’impact de la ségrégation de différentes espèces à l’interface siliciure/semi-conducteur sur la hauteur de barrière Schottky d’un contact en siliciure de platine. Cette méthode de mesure associée à des simulations physiques a permis d’une part, d’extrairer avec fiabilité des hauteurs de barrières avec une précision de 10meV et d’autre part, d’effectuer une sélection des meilleures conditions de ségrégation de dopants pour la réduction de la hauteur de barrière Schottky. Pour conclure, ce projet a rendu possible le développement de méthodes de caractérisation pour l’étude de matériaux utilisés en nanoélectronique. De plus, nous avons pu apporter des éclaircissements concernant l’impact de techniques d’implantation ionique alternatives sur des couches de Si et SiGe ultrafines, et ce, dans le but de réduire la résistance de contact entre siliciure et semi-conducteur dans le module source-drain de transistors ultimes. / During the past few decades, the emergence of new architectures (FDSOI, FinFETs or NW-FETs) and the use of new materials (like silicon/germanium alloys) allowed to go further in MOS devices scaling by solving short channel effect issues. However, new architectures suffer from contact resistance degradation with size reduction. This resistance strongly depends on two parameters: the active dopant concentration close to the semi-conductor surface and the Schottky barrier height of the silicide contact. Many solutions have been proposed to improve both of these physical parameters: pre-amorphisation, laser annealing, dopant segregation and others. In order to optimize the experimental conditions of these fabrication techniques, it is mandatory to measure precisely and reliably their impact on cited parameters.Within the scope of this thesis, two parts are dedicated to each lever of the contact resistance, each time precising the developed characterization method and concrete application studies. The first part concerns the study of the active dopant concentration close to the semi-conductor surface. In this axis, we developed a Differential Hall Effet method (DHE) which can provide accurate depth profiles of active dopant concentration combining successive etching processes and conventional Hall Effect measurements. To do so, we validated layer chemical etching and precise electrical characterization method for doped Si and SiGe. Obtained generated profiles have a sub-1nm resolution and allowed to scan the first few nanometers of layers fabricated by advanced ion implantation and annealing techniques, like solid-phase epitaxy regrowth activated by laser annealing. In the second part, we focused on the measurement of Schottky barrier height of platinum silicide contact. We transferred a characterization method based on back-to-back diodes structure to measure platinum silicide contacts with different dopant segregation conditions. The electrical measurements were then fitted with physical models to extract Schottky barrier height with a precision of about 10meV. This combination between measurements and simulations allowed to point out the best ion implantation and annealing conditions for Schottky barrier height reduction.To conclude, thanks to this project, we developed highly sensitive characterization methods for nanoelectronics application. Moreover, we brought several clarifications on the impact of alternative ion implantation and annealing processes on Si and SiGe ultra-thin layers in the perspective of contact resistance reduction in FDSOI source-drain module.

Em processos de crescimento de cristais pelo método de Czochralski, é observado que um campo elétrico aplicado ao cristal durante o processo de crescimento modifica a quantidade de dopante incorporada ao cristal. É desenvolvido um modelo, baseado na teoria de Burton, Prim e Slichter, levando-se em consideração as duas classes de material envolvidas, os óxidos e os semicondutores, e os efeitos produzidos pelo campo elétrico, eletromigração, subresfriamento constitucional, Efeito Peltier e efeito Seebeck. Resultados experimentais obtidos em crescimentos de LiNbO3:Cr2O3 e Si:Al são usados para aplicações do modelo / In crystal growth processes through the Czochralski method, it is observed that an electrical field applied to the crystal during the growth process modifies the quatity of the dopant incorporated to the crystal. A model is developed based on Burton, Prim and Slichter´s theory, taking into consideration two classes of materials, the oxides and the semiconductors, and the effects produced by the electrical field, electromigration, constitutional supercooling, Peltier Effect, Seebeck Effect. Experimental results obtained from the growth of the LiNbO3:Cr2O3 e Si:Al singlecrystals are used to the model application

A busca pelo aprimoramento de materiais nanocristalinos baseia-se na variação do processo de síntese e na alteração de sua estrutura através da inserção de defeitos na estrutura cristalina. O processo de dopagem tem sido considerado de fundamental importância para estabilizar determinadas fases ou faces cristalinas. Por outro lado, o uso de uma metodologia de síntese versátil como a síntese hidrotérmica e solvotérmica mostra-se como uma proposta interessante para obter materiais já produzidos por técnicas convencionais, mas que apresentam propriedades diferenciadas. Nesse trabalho, verificou-se o efeito do método de síntese utilizado e da adição de íons dopantes como Mg+2 e Ni+2 nas propriedades morfológicas e estruturais do composto titanato de cálcio (CaTiO3) que foi preparado através dos métodos hidrotérmico e solvotérmico. Através das técnicas de difração de raios X e microscopia eletrônica de varredura, foi verificado o efeito dos parâmetros de síntese (tempo e temperatura) e dos materiais precursores nas propriedades estruturais e microestruturais das amostras. Na avaliação de fotoatividade realizada (fotodegradação do corante rodamina B) foi observado que os compostos sintetizados pelo método hidrotérmico com os precursores oxisulfato de titânio e cloreto de cálcio apresentaram melhor atividade fotocatalítica que os compostos sintetizados pelo método solvotérmico (solvente PEG-200). / The search for the improvement of nanocrystalline materials is based on the variation of the synthesis process and the modification of its structure through the insertion of defects in its crystalline structure. The doping process has been considered of fundamental importance to stabilize certain crystalline phases or faces of nanomaterials. On the other hand, the use of a versatile synthesis methodology such as hydrothermal and solvothermal methods is an interesting proposal to obtain materials already produced by conventional techniques, but with different properties. In this work, the effect of the synthesis method and the addition of dopant ions such as Mg+2 and Ni+2 on the morphological and structural properties of the calcium titanate (CaTiO3) compound was verified, which was prepared by hydrothermal and solvothermal methods. The effect of the synthesis parameters (time and temperature) and the precursor materials on the structural and microstructural properties of the samples were verified by means of the X-ray diffraction and scanning electron microscopy techniques. It was observed that the compounds synthesized by the hydrothermal method with the titanium oxysulfate and calcium chloride precursors presented better photocatalytic activity than the compounds synthesized by the solvothermal method (solvent PEG-200).

Os compostos semicondutores ternários, dentre eles o Ga1-xInxSb, têm sido objeto de interesse de pesquisadores e da indústria microeletrônica devido à possibilidade de ajuste da constante de rede, assim como a correspondente modificação da banda proibida de energia e do intervalo de emissão e absorção óptica, com a variação da fração molar de x. A flexibilidade destas propriedades estruturais torna este composto apropriado como substratos para epitaxias de outros compostos ternários e quaternários, na formação de mono e heterojunções. A maneira mais econômica para obtenção de substratos de materiais semicondutores é através do crescimento de cristais a partir da fase líquida. Porém, os parâmetros que regem a obtenção de lingotes de Ga1-xInxSb com qualidade comercial, a partir da fase líquida, ainda não estão bem definidos. O índio tende a segregar para o líquido, pois seu coeficiente de segregação é menor que a unidade (k < 1), resultando num perfil composicional variado ao longo do lingote. Como os binários GaSb e InSb apresentam configurações de defeitos intrínsecos que originam condutividades de tipos opostos, tipo p e tipo n, respectivamente, a mudança na composição da liga, durante o crescimento, provavelmente resulta na modificação da concentração de cada um destes defeitos. A dopagem com telúrio consiste numa alternativa para minimizar a segregação do índio e diminuir a densidade dos defeitos pontuais, melhorando a qualidade estrutural de cristais de Ga1-xInxSb obtidos através do método Bridgman convencional. Desta forma foram crescidos cristais ternários Ga1-xInxSb, com e sem agitação do líquido durante a síntese, com fração molar inicial de índio de 10% e 20%, alguns deles dopados com 1020 átomos/cm3 de telúrio, pelo método Bridgman vertical. A caracterização estrutural em termos de formação de defeitos lineares, interfaciais e volumétricos foi realizada através de imagens obtidas por microscopia óptica, eletrônica de varredura e de transmissão. A homogeneidade composicional e distribuição de fases foi avaliada através de medidas de espectroscopia por dispersão de energia. Medidas de resistividade e efeito Hall foram utilizadas para a caracterização elétrica, enquanto que a transmitância óptica e a banda proibida de energia foram avaliadas por espectrometria FTIR. Os padrões de difração obtidos através da microscopia eletrônica de transmissão foram utilizados para avaliar a cristalinidade das amostras e determinar o parâmetro de rede. Os resultados obtidos indicam que o telúrio atua de forma compensatória, minimizando a segregação de índio e contribuindo para a homogeneidade composicional e redução de defeitos, principalmente de discordâncias. Além disso, altera a condutividade do Ga1-xInxSb para tipo n, mesmo em frações molares de In inferiores a x = 0,5, diminuindo o número de cargas positivas na rede atribuídas aos defeitos tipo GaSb e VGaGaSb e, desta forma, aumenta a concentração de portadores de carga e reduz a resistividade. Na condição de alta dopagem, reduz a transmitância óptica no infravermelho e aumenta a banda proibida de energia através do efeito Burstein-Moss. A avaliação de cristais de Ga1-xInxSb, dopados e não dopados, crescidos pelo método Bridgman convencional contribuiu para o entendimento do comportamento de dopantes em compostos semicondutores ternários. / Ternary compound semiconductors, including Ga1-xInxSb, have been subject of interest of researchers and microelectronics industry because of the possibility of adjusting the lattice constant, as well as the corresponding modification in the band gap energy, and in the optical absorption and emission range, by varying the mole fraction x. The flexibility of their structural properties makes this compound suitable as substrates for epitaxy of other ternary and quaternary compounds, in the formation of mono- and heterojunctions. The most economical way to obtain semiconductor substrates is by crystal growth from the liquid phase. However, the parameters governing the outcoming of Ga1-xInxSb ingots with commercial quality, from liquid phase, are not well defined. Indium tends to segregate to the liquid, since its segregation coefficient is less than the unity (k < 1), resulting in a varied compositional profile along the ingot. As the binary GaSb and InSb have intrinsic defects configurations that originate opposite conductivities, type p and type n, respectively, the change in the alloy composition, while growing, probably results in a modification of the concentration on each of these defects. Doping with tellurium is an alternative to minimize the indium segregation and decrease the density of point defects, therefore improving the structural quality of Ga1-xInxSb crystals obtained through the conventional Bridgman method. Thus, ternary Ga1-xInxSb crystals were grown by vertical Bridgman method with and without stirring the melt during the synthesis, with 10% and 20% initial molar fraction of indium and some of them were tellurium-doped at 1020 atoms/cm3. The structural characterization regarding linear, interfacial, and volumetric defects formation was performed by using images obtained through optical, scanning and transmission electron microscopy. The compositional homogeneity and phase distribution was assessed by energy-dispersive spectroscopy measurements. Resistivity and Hall Effect measurements were used for the electrical characterization, while the optical transmittance and the band gap energy were examined by FTIR spectroscopy. Diffraction patterns obtained by transmission electron microscopy were used to evaluate the crystallinity of the samples and determine the lattice parameter. The results indicate that tellurium acts in a compensatory way, minimizing indium segregation and contributing to the compositional homogeneity and defect reduction, especially in dislocations. In addition, it changes the conductivity of Ga1-xInxSb to n-type, even in mole fraction of In lower than x = 0.5, reducing the number of positive charges on the network assigned to GaSb and VGaGaSb defects, thus increasing the concentration of charge carriers and reducing the resistivity. In high doping condition, it reduces the optical transmittance in the infrared region and increases the energy of the band gap by the Burstein-Moss Effect. The evaluation of Ga1-xInxSb crystals, doped and undoped, grown by the conventional Bridgman method contributed to the understanding of dopants behavior in ternary compound semiconductors.

A busca pelo aprimoramento de materiais nanocristalinos baseia-se na variação do processo de síntese e na alteração de sua estrutura através da inserção de defeitos na estrutura cristalina. O processo de dopagem tem sido considerado de fundamental importância para estabilizar determinadas fases ou faces cristalinas. Por outro lado, o uso de uma metodologia de síntese versátil como a síntese hidrotérmica e solvotérmica mostra-se como uma proposta interessante para obter materiais já produzidos por técnicas convencionais, mas que apresentam propriedades diferenciadas. Nesse trabalho, verificou-se o efeito do método de síntese utilizado e da adição de íons dopantes como Mg+2 e Ni+2 nas propriedades morfológicas e estruturais do composto titanato de cálcio (CaTiO3) que foi preparado através dos métodos hidrotérmico e solvotérmico. Através das técnicas de difração de raios X e microscopia eletrônica de varredura, foi verificado o efeito dos parâmetros de síntese (tempo e temperatura) e dos materiais precursores nas propriedades estruturais e microestruturais das amostras. Na avaliação de fotoatividade realizada (fotodegradação do corante rodamina B) foi observado que os compostos sintetizados pelo método hidrotérmico com os precursores oxisulfato de titânio e cloreto de cálcio apresentaram melhor atividade fotocatalítica que os compostos sintetizados pelo método solvotérmico (solvente PEG-200). / The search for the improvement of nanocrystalline materials is based on the variation of the synthesis process and the modification of its structure through the insertion of defects in its crystalline structure. The doping process has been considered of fundamental importance to stabilize certain crystalline phases or faces of nanomaterials. On the other hand, the use of a versatile synthesis methodology such as hydrothermal and solvothermal methods is an interesting proposal to obtain materials already produced by conventional techniques, but with different properties. In this work, the effect of the synthesis method and the addition of dopant ions such as Mg+2 and Ni+2 on the morphological and structural properties of the calcium titanate (CaTiO3) compound was verified, which was prepared by hydrothermal and solvothermal methods. The effect of the synthesis parameters (time and temperature) and the precursor materials on the structural and microstructural properties of the samples were verified by means of the X-ray diffraction and scanning electron microscopy techniques. It was observed that the compounds synthesized by the hydrothermal method with the titanium oxysulfate and calcium chloride precursors presented better photocatalytic activity than the compounds synthesized by the solvothermal method (solvent PEG-200).

A great deal of theoretical activity has resulted from blending the fields of computer science and quantum mechanics. Out of this work has come the concept of a quantum computer, which promises to solve problems currently intractable for classical computers. This promise has, in turn, generated a large amount of effort directed toward investigating quantum computing experimentally. ¶ Quantum computing is difficult because fragile quantum superposition states of the computer’s register must be protected from the environment. This is made more difficult by the need to manipulate and measure these states. ¶ This thesis describes work that was carried out both to investigate and to demonstrate the utility of rare earth ion dopants for quantum computation. Dopants in solids are seen by many as a potential means of achieving scalable quantum computing. Rare earth ion dopants are an obvious choice for investigating such quantum computation. Long coherence times for both optical and nuclear spin transitions have been observed as well as optical manipulation of the spin states. The advantage that the scheme developed here has over nearly all of its competitors is that no complex nanofabrication is required. The advantages of avoiding nano-fabrication are two fold. Firstly, coherence times are likely to be adversely effected by the “damage” to the crystal structure that this manufacture represents. Secondly, the nano-fabrication presents a very serious difficulty in itself. ¶ Because of these advantages it was possible to perform two-qubit operations between independent qubits. This is the first time that such operations have been performed and presents a milestone in quantum computation using dopants in solids. It is only the second time two-qubit operations have been demonstrated in a solid. ¶ The experiments performed in this thesis were in two main areas: The first was the characterisation of hyperfine interactions in rare earth ion dopants; the second, simple demonstrations directly related to quantum computation. ¶ The first experiments that were carried out were to characterise the hyperfine interactions in Pr[superscript 3]+:Y[subscript 2]SiO[subscript 5]. The characterisation was the first carried out for the dopants in a site of such low symmetry. The resulting information about oscillator strengths and transition frequencies should prove indispensable when using such a system for quantum computation. It has already enabled an increase in the coherence times of nuclear spin transitions by two orders of magnitudes. ¶ The experiments directly related to the demonstration of quantum computation were all carried out using ensembles. The presence of a significant distribution of resonant frequencies, or inhomogeneous broadening, meant that many different sub-ensembles could be addressed, based on their resonant frequencies. Furthermore, the properties of the sub-ensembles could be engineered by optically pumping unwanted members to different hyperfine states away from resonance with the laser. ¶ A previously demonstrated technique for realising ensembles that could be used as single qubits was investigated and improved. Also, experiments were carried out to demonstrate the resulting ensembles’ utility as qubits. Further to this, ions from one of the ensembles were selected out, based on their interaction with the ions of another. Elementary two qubit operations were then demonstrated using these ensembles.

The demands on Hydrogen fuel based technologies is ever increasing for substitution or replacing fossil fuel due to superior energy sustainability, national security and reduced greenhouse gas emissions. Currently, the polymer based proton exchange membrane fuel cell (PEMFC), is strongly considered for on-board hydrogen storage vehicles due to low temperature operation, efficiency and low environmental impact. However, the realization of PEMFC vehicles must overcome the portable hydrogen storage barrier. DOE and FreedomCAR technical hydrogen storage targets for the case of solid state hydrides are: (1) volumetric hydrogen density > 0.045 kgH2/L, (2) gravimetric hydrogen density > 6.0 wt%, (3) operating temperature < 150 degrees C, (4) lifetimes of 1000 cycles, and (5) a fast rate of H2 absorption and desorption. To meet these targets, we have focused on lithium borohydride systems; an alkali metal complex hydride with a high theoretical hydrogen capacity of 18 wt.%. It has been shown by Vajo et al. that adding MgH2, improves the cycling capacity of LiBH4. The pressure-composition-isotherms of the destabilized LiBH4 + MgH2 system show an extended plateau pressure around 4-5 bars at 350 degrees C with a good cyclic stability. The mentioned destabilizing mechanism was successfully utilized to synthesize the complex hydride mixture LiBH4 + 1/2MgH2 + Xmol% ZnCl2 catalyst (X=2, 4, 6, 8 and 10) by ball milling process. The added ZnCl2 exhibited some mild catalytic activity which resulted in a decomposition temperature reduction to 270 degrees C. X-ray powder diffraction profiles exhibit LiCl peaks whose intensity increases proportionately with increasing ZnCl2 indicating an interaction between catalyst and hydride system, possibly affecting the total weight percent of desorbed hydrogen. Thermal gravimetric analysis profiles for MgH2 + 5mol% nanoNi and LiBH4 + ZnCl2 + 3mol% nanoNi indicate that small concentrations of nano-nickel acts as an effective catalyst that reduces the mixture desorption temperature to around 225 degrees C and 88 degrees C, respectively. Future work will be focused on thermodynamic equilibrium studies (PCT) on the destabilized complex hydrides.