by Fung Chi Keung = 採用脈衝直流電源對靶濺射技術製備銦錫氧化物薄膜的硏究 / 馮志強. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Fung Chi Keung = Cai yong mai chong zhi liu dian yuan dui ba jian she ji shu zhi bei yin xi yang hua wu bo mo de yan jiu / Feng Zhiqiang. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iii / Table of contents --- p.iv / List of figures --- p.viii / List of tables --- p.xii / Chapter Chapter 1 --- Introduction --- p.1-1 / Chapter 1.1 --- Genesis --- p.1-1 / Chapter 1.2 --- Aims and Objectives --- p.1-1 / Chapter 1.3 --- Layout of Thesis --- p.1-3 / References --- p.1-4 / Chapter Chapter 2 --- Literature Review --- p.2-1 / Chapter 2.1 --- Introduction to transparent conducting oxides (TCOs) --- p.2-1 / Chapter 2.2 --- Indium tin oxide (ITO) --- p.2-2 / Chapter 2.2.1 --- Use of ITO --- p.2-2 / Chapter 2.2.2 --- Structure and properties of ITO --- p.2-3 / Chapter 2.3 --- Properties of ITO films deposited by different growth techniques --- p.2-8 / Chapter 2.3.1 --- Sputtering --- p.2-9 / Chapter 2.3.2 --- Vacuum evaporation --- p.2-11 / Chapter 2.3.3 --- Spray pyrolysis --- p.2-11 / Chapter 2.3.4 --- Chemical vapor deposition (CVD) --- p.2-12 / Chapter 2.3.5 --- Reactive ion plating --- p.2-12 / Chapter 2.4 --- Contradictions in existing literature --- p.2-13 / References --- p.2-15 / Chapter Chapter 3 --- Thin Film Fabrication and Process --- p.3-1 / Chapter 3.1 --- Facing-target sputtering (FTS) --- p.3-1 / Chapter 3.2 --- Asymmetric bipolar pulsed DC power source --- p.3-3 / Chapter 3.2.1 --- Target poisoning --- p.3-3 / Chapter 3.2.2 --- Preferential sputtering --- p.3-4 / Chapter 3.2.3 --- Discussion --- p.3-4 / Chapter 3.3 --- Substrates --- p.3-6 / Chapter 3.3.1 --- Microscopic glass --- p.3-7 / Chapter 3.3.2 --- Corning 7059 glass --- p.3-8 / Chapter 3.3.3 --- Epitaxial growth --- p.3-8 / Chapter 3.3.3.1 --- Epitaxial lattice matching --- p.3-8 / Chapter 3.3.3.2 --- Yttrium stabilized zirconia (YSZ) --- p.3-9 / Chapter 3.3.3.3 --- Sapphire --- p.3-9 / Chapter 3.3.3.4 --- Silicon wafer --- p.3-11 / Chapter 3.3.4 --- Substrate cleaning --- p.3-11 / Chapter 3.4 --- Targets for the reactive sputtering of ITO films --- p.3-13 / Chapter 3.4.1 --- Indium Tin Oxide target (90wt% ln203 : 10wt% Sn04) --- p.3-14 / Chapter 3.4.2 --- Indium Tin alloy target (90wt% In : 10wt% Sn) --- p.3-14 / Chapter 3.5 --- Deposition conditions --- p.3-16 / Chapter 3.5.1 --- Sputter atmosphere --- p.3-16 / Chapter 3.5.2 --- Deposition pressure --- p.3-16 / Chapter 3.5.3 --- Deposition power --- p.3-17 / Chapter 3.5.4 --- Target to substrate distance --- p.3-17 / Chapter 3.5.5 --- Pulse frequency and pulse width --- p.3-17 / Chapter 3.6 --- Deposition --- p.3-17 / References --- p.3-19 / Chapter Chapter 4 --- Measurement and Analysis Techniques --- p.4-1 / Chapter 4.1 --- Resistivity measurement --- p.4-1 / Chapter 4.2 --- "Transmittance, reflectivity and absorption measurements" --- p.4-3 / Chapter 4.3 --- Thickness measurement --- p.4-4 / Chapter 4.4 --- "Crystal structure, surface morphology and roughness measurements" --- p.4-4 / Chapter 4.5 --- Photolithography --- p.4-7 / Chapter 4.6 --- Hall effect measurements --- p.4-8 / References --- p.4-10 / Chapter Chapter 5 --- Experimental results and discussions --- p.5-1 / Chapter 5.1 --- Effect of O2 partial pressure --- p.5-1 / Chapter 5.1.1 --- Deposition rate --- p.5-2 / Chapter 5.1.2 --- Electrical and optical properties --- p.5-4 / Chapter 5.1.3 --- Structure and orientation --- p.5-16 / Chapter 5.1.4 --- Surface morphology and roughness --- p.5-22 / Chapter 5.1.5 --- Conclusion --- p.5-29 / Chapter 5.2 --- Effect of substrate temperature --- p.5-29 / Chapter 5.2.1 --- Electrical and optical properties --- p.5-29 / Chapter 5.2.2 --- Structure and orientation --- p.5-44 / Chapter 5.2.3 --- Surface morphology and roughness --- p.5-49 / Chapter 5.2.4 --- Conclusion --- p.5-54 / Chapter 5.3 --- Effect of vacuum annealing --- p.5-54 / Chapter 5.3.1 --- Electrical and optical properties --- p.5-54 / Chapter 5.3.2 --- Conclusion --- p.5-59 / Chapter 5.4 --- Effect of different substrates --- p.5-59 / Chapter 5.4.1 --- Comparison of heteroepitaxial and polycrystalline ITO films --- p.5-60 / Chapter 5.4.2 --- Conclusion --- p.5-63 / Chapter 5.5 --- Effect of film thickness --- p.5-64 / Chapter 5.5.1 --- Film thickness calibration --- p.5-64 / Chapter 5.5.2 --- Electrical properties --- p.5-64 / Chapter 5.5.3 --- Conclusion --- p.5-67 / Chapter 5.6 --- Effect of deposition pressure --- p.5-68 / Chapter 5.6.1 --- Deposition rate --- p.5-68 / Chapter 5.6.2 --- Electrical properties --- p.5-70 / Chapter 5.6.3 --- Conclusion --- p.5-70 / Chapter 5.7 --- Effect of target pre-conditioning --- p.5-72 / Chapter 5.8 --- Conclusion --- p.5-72 / References --- p.5-74 / Chapter Chapter 6 --- Further works --- p.6-1 / Appendix I

Wong Yuk Chun. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 71-74). / Abstracts in English and Chinese. / Abstract --- p.ii / Acknowledgments --- p.iii / Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Motivation --- p.2 / Chapter 1.2 --- The Scope of the Project --- p.2 / Chapter 1.3 --- An Outline of the Thesis --- p.3 / Chapter 2 --- Related Work --- p.5 / Chapter 2.1 --- Percolation Effect --- p.5 / Chapter 2.2 --- Percolation Models --- p.6 / Chapter 2.2.1 --- Site Percolation --- p.6 / Chapter 2.2.2 --- Bond Percolation --- p.8 / Chapter 2.3 --- Simulated Annealing --- p.8 / Chapter 3 --- Electrical Property --- p.11 / Chapter 3.1 --- Electrical Conductivity --- p.11 / Chapter 3.2 --- Physical Model --- p.13 / Chapter 3.3 --- Algorithm --- p.16 / Chapter 3.3.1 --- Simulated Annealing --- p.18 / Chapter 3.3.2 --- Neighborhood Relation and Objective Function --- p.19 / Chapter 3.3.3 --- Configuration Space --- p.21 / Chapter 3.3.4 --- Annealing Schedule --- p.22 / Chapter 3.3.5 --- Expected Time Bound --- p.23 / Chapter 3.4 --- Results --- p.26 / Chapter 3.5 --- Discussion --- p.27 / Chapter 4 --- Thermal Properties --- p.30 / Chapter 4.1 --- Thermal Expansivity --- p.31 / Chapter 4.2 --- Physical Model --- p.32 / Chapter 4.2.1 --- The Physical Properties --- p.32 / Chapter 4.2.2 --- Objective Function and Neighborhood Relation --- p.37 / Chapter 4.3 --- Algorithm --- p.38 / Chapter 4.3.1 --- Parallel Simulated Annealing --- p.39 / Chapter 4.3.2 --- The Physical Annealing Schedule --- p.42 / Chapter 4.4 --- Results --- p.43 / Chapter 4.5 --- Discussion --- p.47 / Chapter 5 --- Scaling Properties --- p.48 / Chapter 5.1 --- Problem Define --- p.49 / Chapter 5.2 --- Physical Model --- p.50 / Chapter 5.2.1 --- The Physical Properties --- p.50 / Chapter 5.2.2 --- Bond Stretching Force --- p.50 / Chapter 5.2.3 --- Objective Function and Configuration Space --- p.51 / Chapter 5.3 --- Algorithm --- p.52 / Chapter 5.3.1 --- Simulated Annealing --- p.52 / Chapter 5.3.2 --- The Conjectural Method --- p.54 / Chapter 5.3.3 --- The Physical Annealing Schedule --- p.56 / Chapter 5.4 --- Results --- p.57 / Chapter 5.4.1 --- Case I --- p.59 / Chapter 5.4.2 --- Case II --- p.60 / Chapter 5.4.3 --- Case III --- p.60 / Chapter 5.5 --- Discussion --- p.61 / Chapter 6 --- Conclusion --- p.62 / Chapter A --- An Example on Studying Electrical Resistivity --- p.64 / Chapter B --- Theory of Elasticity --- p.67 / Chapter C --- Random Number Generator --- p.69 / Bibliography

by Yeung Mei Ki. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 122-127). / Text in English; abstracts in English and Chinese. / by Yeung Mei Ki. / Abstract --- p.i / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.viii / List of Tables --- p.xi / Abbreviations --- p.xii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Polymer light emitting devides --- p.1 / Chapter 1.1.1 --- Development history of PLEDs --- p.3 / Chapter 1.1.2 --- Basic structure of the PLEDs --- p.4 / Chapter 1.1.3 --- Operation principle of the PLEDs --- p.7 / Chapter 1.1.4 --- Electroluminescent (EL) polymers --- p.9 / Chapter 1.2 --- Research motivation and aim of study --- p.11 / Chapter 1.3 --- Thesis outline --- p.16 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Thermal analysis --- p.18 / Chapter 2.1.1 --- Thermogravimetry (TG) --- p.19 / Chapter 2.1.2 --- Differential scanning calorimetry (DSC) --- p.22 / Chapter 2.2 --- Spectroscopic analysis --- p.27 / Chapter 2.2.1 --- Fourier transform infrared spectroscopy (FTIR) --- p.27 / Chapter 2.2.2 --- X-ray photoelectron spectroscopy (XPS) --- p.32 / Chapter 2.2.3 --- Photoluminescence spectroscopy (PL) --- p.36 / Chapter Chapter 3 --- Experimental metods to charaterize the elimination of / Chapter 3.1 --- Introduction --- p.41 / Chapter 3.2 --- Synthesis of the PPV precursor polymer --- p.43 / Chapter 3.3 --- Average molecular weight of the PPV precursor --- p.46 / Chapter 3.4 --- Thermal elimination of the precursor polymer --- p.48 / Chapter 3.5 --- Thermal stability of the PPV precursor polymer --- p.50 / Chapter 3.5.1 --- Sample preparation --- p.50 / Chapter 3.5.2 --- Experimental --- p.51 / Chapter 3.5.3 --- Results and discussion --- p.52 / Chapter 3.6 --- Structural changes of the precursor polymer during elimination --- p.57 / Chapter 3.6.1 --- Sample preparation --- p.57 / Chapter 3.6.2 --- Experimental --- p.58 / Chapter 3.6.3 --- Results and discussion --- p.58 / Chapter 3.7 --- Chemical composition of the precursor polymer upon elimination --- p.67 / Chapter 3.7.1 --- Sample preparation --- p.67 / Chapter 3.7.2 --- Experimental --- p.67 / Chapter 3.7.3 --- Results and discussion --- p.68 / Chapter 3.8 --- Effect of the conjugation length of the polymer on photoluminescence --- p.74 / Chapter 3.8.1 --- Sample preparation --- p.76 / Chapter 3.8.2 --- Experimental --- p.78 / Chapter 3.8.3 --- Results and discussion --- p.79 / Chapter 3.9 --- Conclusions --- p.89 / Chapter Chapter 4 --- Experimental methods to characterize the water absorption by PEDOT:PSS / Chapter 4.1 --- Introduction --- p.90 / Chapter 4.2 --- Determination of the water content of PEDOT:PSS at different relative humidity using TG --- p.93 / Chapter 4.2.1 --- Experimental --- p.94 / Chapter 4.2.2 --- Results and discussion --- p.96 / Chapter 4.3 --- Determination of bounded water content of PEDOT:PSS at different RH by DSC --- p.98 / Chapter 4.3.1 --- Experimental --- p.98 / Chapter 4.3.2 --- Results and discussion --- p.100 / Chapter 4.4 --- Determination of bounded water content of PEDOT:PSS at different RH by FTIR --- p.108 / Chapter 4.4.1 --- Experimental --- p.109 / Chapter 4.4.2 --- Results and discussion --- p.112 / Chapter 4.5 --- Conclusions --- p.118 / Chapter Chapter 5 --- Conclusions --- p.120 / References --- p.122

Thesis (B.S.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1979. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Includes bibliographical references. / by Fred James Williams. / B.S.

Thesis (B.S.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1981. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Includes bibliographical references. / by Avraham Benatar. / B.S.

Thesis (Elec.E)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1982. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING / Includes bibliographical references. / by Huan Lim Lee. / Elec.E

The isolation of monolayer graphene by Andre Geim and Konstantin Novoselov in 2004 created an explosion of layered materials research in the fields of condensed matter physics, material science, electrical engineering, chemistry, and nanobiology, to name a few. The applications have been broad from enhancing electrode performance in batteries to gas sensing to high-frequency analog flexible electronics. For several years and still to this day, graphene has provided a fertile ground for research due to its superior properties. However, failed efforts to engineer a substantial bandgap, a requirement for digital electronics, led researchers to look elsewhere in the periodic table for other layered materials with rich physics and an even broader application space. Fortunately, the technical expertise developed in the graphene system could, for the most part, be leveraged and modified in these new material systems. This thesis presents a brief history of the field of two-dimensional electronics. The rediscovery - and it can only really be characterized as such since most of these materials were studied in the bulk form going back to the 1960s - of these two-dimensional materials with properties ranging from superconductivity, piezoelectricity, optical and electrical anisotropy, and large magnetoresistivity required the development of new characterization techniques to address the perturbations that accompanied the “thinning” of layers. Several characterization techniques were developed and are presented in this thesis. Moreover, in an effort to push these materials closer towards technological viability, synthesis techniques were developed that enabled the systematic study of a prototypical material system, molybdenum disulfide (MoS₂), in order to address the challenges that accompany scalability and determine the structure-property-function relationship.

Nano-materials are interesting material category with a single unit size between 1 and 1000 nanometers and possess unique mechanical, electrical, optical, and other physical properties that make them stand out from ordinary materials. With increasing demand for reduced size of electronic devices and integrated micro/nano-electro-mechanical systems (MEMS / NEMS), there is a high driving force in scientific research and technological advancement in nanotechnology. My research is about two popular novel nanomaterials: carbon nanotubes (1-dimensional material) and thin-layer transition metal dichalcogenides (2-dimensional materials). My first research direction is about the characterization of electrical properties of carbon nanotubes and using them as bio-sensors. Carbon nanotubes (CNTs), in general, are a material of great interest for many applications since their first discovery in 1991 [1], due to their unique structure, extraordinary electrical and mechanical properties, and unusual chemical properties. High-throughput fabrication of carbon nanotube field effect transistors (CNTFETs) with uniform properties has been a challenge since they were first fabricated in 1998. We invent a novel fabrication method to produce a 1×1 cm2 chip with over 700 CNTFETs fabricated around one single carbon nanotube. This large number of devices allows us to study the stability and uniformity of CNTFET properties. We grow flow-aligned CNTs on a SiO2/Si substrate by chemical vapor deposition and locate a single long CNT (as long as 1 cm) by scanning electron microscopy. Two photolithography steps are then used, first to pattern contacts and bonding pads, and next to define a mask to ‘burn’ away additional nanotubes by oxygen plasma etch. A fabrication yield of ~72% is achieved. The authors present statistics of the transport properties of these devices, which indicates that all the CNTFETs share the same threshold voltage, and similar on-state conductance. These devices are then used to measure DNA conductance by connecting DNA molecule of varying lengths to lithographically cut CNTFETs. While one single carbon nanotube is considered 1-dimensional material because it only has one side with “non-nano” length, the thin-layer transition metal dichalcogenides (TMDCs) are called the 2-dimensional materials since they have two sides of normal lengths and the other side of atomic size. Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interests in recent years, motivating investigation into multiple properties. We use a refined version of the optothermal Raman technique [2][3] to measure the thermal transport properties of two TMDC materials, MoS2 and MoSe2, in single-layer (1L) and bi-layer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples under study and find values ~40% lower than previously assumed. Second, by comparing the response of fully supported and suspended samples using different laser spot sizes, we are able to independently measure the interfacial thermal conductance to the substrate and the lateral thermal conductivity of the supported and suspended materials. The approach is validated by examining the response of a suspended film illuminated in different positions in radial direction. For 1L MoS2 and MoSe2, the room-temperature thermal conductivities are (80±17) W/mK and (55±18) W/mK, respectively. For 2L MoS2 and MoSe2, we obtain values of (73±25) W/mK and (39±13) W/mK. Crucially, the interfacial thermal conductance is found to be of order 0.1-1 MW/m2K, substantially smaller than previously assumed, a finding that has important implications for design and modeling of electronic devices.

The increased use of DC-consuming electronics in many applications relevant to everyday life, necessitates significant improvements to power conversion and distribution methodologies. The surge in mobile electronics created a new power application space where high efficiency, size, and reduced complexity are critical, and at the same time, many computational tasks are relegated to centralized cloud computing centers, which consume significant amounts of energy. In both those application spaces, conversion and distribution efficiency improvements of even a few-% proves to be more and more challenging. A lot of research and development efforts target each source of loss, in an attempt to improve power electronics such that it serves the advances in other fields of electronics. Non-isolated DC-DC converters are essential in every electronics system, and improvements to efficiency, volume, weight and cost are of utmost interest. In particular, increasing the operation frequency and the conversion ratio of such converters serves the purposes of reducing the number or required conversion steps, reducing converter size, and increasing efficiency. The aforementioned improvements can be achieved by using superior technologies for the components of the converter, and by implementing higher level of integration than most present-day converters exhibit. In this work, Gallium Nitride (GaN) high electron mobility transistors (HEMT) are utilized as switches in a half-bridge buck converter topology, in conjunction with fine-line 180nm complementary metal oxide semiconductor (CMOS) driver circuitry. The circuits are integrated through a face-to-face bonding technique which results in significant reduction in interconnects parasitics and allows faster, more efficient operation. This work shows that the use of GaN transistors for the converter gives an efficiency headroom that allow pairing converters with state-of-the-art thin-film inductors with magnetic material, a task that is currently usually relegated to air-core inductors. In addition, a new "core-clad" structure for thin-film magnetic integrated inductors is presented for the use with fully integrated voltage regulators (IVRs). The core-clad topology combines aspects from the two popular inductor topologies (solenoid and cladded) to achieve higher inductance density and improved high frequency performance.

O titanato de estrôncio (SrTiO3) possui estrutura cristalina do tipo perovsquita. Materiais com este tipo de estrutura são utilizados para diversas aplicações, tais como, sensores, atuadores, em células a combustível de óxido sólido, entre outros. Devido as suas interessantes propriedades físicas, o SrTiO3 vem sendo intensamente estudado, em especial com a introdução de dopantes. Portanto, neste trabalho foi investigada a influência de diferentes teores de Ca (1; 2,5 e 5% mol) e Pr (0,025; 0,050; 0,075 e 1% mol) na microestrutura e propriedades elétricas e dielétricas do SrTiO3, assim como o material sem aditivos (puro). Os resultados mostram que após a sinterização do SrTiO3 puro, a microestrutura consiste de grãos poligonais com tamanho médio micrométrico, além de texturas lisas e rugosas. A condutividade elétrica das amostras sintetizadas sinterizadas a 1450 e 1500ºC é máxima para 2 horas de patamar. Apenas as amostras de SrTiO3 contendo 1% em mol de Ca apresentam fase única. O tamanho médio de grãos das amostras contendo 1% em mol de Ca é 10,65 ± 0,28 µm e para teores acima deste valor ocorre crescimento significativo dos grãos. As medidas de condutividade elétrica mostraram que as amostras contendo a adição de 1% em mol de Ca possuem maior condutividade dos grãos em relação ao material puro. Para as amostras contendo teores de até 0,075% mol de Pr, pode-se observar alguns grãos lisos e outros rugosos e não há variação considerável do tamanho médio de grãos. As amostras contendo menor teor de Pr (0,025% mol) apresentam maior condutividade dos grãos e contornos de grãos. As amostras de SrTiO3 sintetizado sinterizadas a 1450ºC/10 h apresentaram permissividade elétrica colossal em temperatura ambiente em altas frequências. / Strontium titanate (SrTiO3) exhibits cubic perovskite type crystalline structure at room temperature. Polycrystalline ceramics with this structure are potential candidates for a number of applications including sensors, actuators and in solid oxide fuel cells. Several properties of SrTiO3 are strongly dependent on addition of both donors and acceptors additives. Then, there is a growing interest for studying its properties as a function of type and concentration of additives. In this study, the effects of Ca (1, 2.5 and 5 mol%) and Pr (0.025 to 1 mol%) additions on microstructure and electric and dielectric properties of SrTiO3 were investigated. The microstructure of pure SrTiO3 consists of polygonal grains with average grain size in the micrometer range, and the electric conductivity is maximized after sintering for 2 h at 1450 and 1500ºC. Specimens containing 1 mol% Ca are single phase and the average grain size is 10.65 ± 0.28 µm, but for higher additive contents grain growth is observed. The electric conductivity of SrTiO3 with 1 mol% Ca is higher than that of the pure ceramic. Specimens containing Pr do not show significant grain growth, and the higher conductivity of grains and grain boundaries was achieved with 0.025 mol% Pr. Pure SrTiO3 sintered at 1450ºC for 10 h shows colossal dielectric permittivity (> 1.000) at room temperature, in contrast to specimens prepared with commercial powder (dielectric permittivity = 300), at high frequencies.