Wang Yuhao = 利用X光电子谱和导电原子力显微镜对聚3, 4-乙烯二氧噻酚 : 聚苯磺酸改性的研究 / 王宇昊. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2005. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Wang Yuhao = Li yong X guang dian zi pu he dao dian yuan zi li xian wei jing dui ju 3, 4-yi xi er yang sai fen : ju ben huang suan gai xing de yan jiu / Wang Yuhao. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xiii / Chapter CHAPTER 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Review of conducting conjugated polymers --- p.1 / Chapter 1.1.1 --- Development of conjugated polymer --- p.1 / Chapter 1.1.2 --- Basic concepts in independent-electron theories of conducting conjugated polymers --- p.2 / Chapter 1.1.2.1 --- "Huckel model and its difficulty, the importance of election-phonon" --- p.2 / Chapter 1.1.2.2 --- The SSH model and dimerization --- p.3 / Chapter 1.1.2.3 --- "Charge carriers in conducting conjugated polymers: soliton, polaron and bipolaron" --- p.5 / Chapter 1.1.3 --- "Poly(3,4-ethylenedioxythiophene) or PEDT" --- p.5 / Chapter 1.1.4 --- Derivatives of PEDT --- p.6 / Chapter 1.1.5 --- Application of PEDT and its derivatives --- p.7 / Chapter 1.2 --- Polymeric light emitting diodes (PLED) --- p.7 / Chapter 1.2.1 --- Invention Polymeric light emitting diodes (PLED) --- p.7 / Chapter 1.2.2 --- Electric structure of PLEDs --- p.7 / Chapter 1.2.3 --- Transition from excitons to photons --- p.8 / Chapter 1.2.4 --- Controlling electron and hole injection --- p.8 / Chapter 1.2.5 --- Application of PEDT-PSS as hole transporting layer in PLED --- p.9 / Chapter 1.2.6 --- "Phase separating in PEDT-PSS blend, removing the PSS rich layer" --- p.9 / Chapter 1.3 --- Motivations of the thesis work --- p.10 / References --- p.10 / Chapter CHAPTER 2 --- INSTRUMENTATION --- p.27 / Chapter 2.1 --- X-ray Photoelectron Spectroscopy --- p.27 / Chapter 2.1.1 --- History of XPS techniques --- p.27 / Chapter 2.1.2 --- Physical Basis --- p.28 / Chapter 2.1.3 --- Chemical Shift of Binding Energy in XPS --- p.29 / Chapter 2.1.4 --- Binding Energy Referencing in XPS --- p.29 / Chapter 2.1.5 --- Sampling Depth of XPS --- p.30 / Chapter 2.1.6 --- Instrumental Setup of XPS --- p.30 / Chapter 2.2 --- Scanning Probe Microscopy --- p.31 / Chapter 2.2.1 --- Introduction --- p.31 / Chapter 2.2.2 --- Atomic Force Microscopy and Conductive Atomic Force Microscopy --- p.31 / Chapter 2.2.3 --- Instrumental Setup for Conductive AFM --- p.32 / Chapter 2.3 --- The Low Energy Ion Beam (LEIB) system at CUHK --- p.32 / Chapter 2.3.1 --- Introduction --- p.32 / Chapter 2.3.2 --- Principle --- p.33 / Chapter 2.3.3 --- Instrumentation Setup --- p.33 / References --- p.33 / Chapter CHAPTER 3 --- Effects of Ar+ bombardment at 500 and 100eV --- p.42 / Chapter 3.1 --- Introduction --- p.42 / Chapter 3.2 --- Sample Preparation --- p.42 / Chapter 3.3 --- Ar+ sputtering and XPS measurement of the sputtered sample. --- p.43 / Chapter 3.4 --- Results and Discussion --- p.44 / References --- p.49 / Chapter CHAPTER 4 --- Effects of annealing on PEDT-PSS thin films studied by XPS and AFM --- p.60 / Chapter 4.1 --- Introduction --- p.60 / Chapter 4.2 --- Sample Preparation --- p.60 / Chapter 4.3 --- XPS measurements and results --- p.61 / Chapter 4.3.1 --- XPS of C 1s core level of PEDT-PSS --- p.61 / Chapter 4.3.2 --- XPS of O 1s core level of PEDT-PSS --- p.62 / Chapter 4.3.3 --- XPS of S 2p core level of PEDT-PSS --- p.62 / Chapter 4.3.4 --- XPS of Valence Band of PEDT-PSS --- p.64 / Chapter 4.4 --- C-AFM measurements and results --- p.65 / Chapter 4.4.1 --- C-AFM measurements on PEDT-PSS --- p.65 / Chapter 4.5 --- Measurements and results about film insolubility and conductivity --- p.65 / Chapter 4.5.1 --- Insolubility measurements --- p.66 / Chapter 4.5.2 --- Conductivity measurements --- p.66 / Chapter 4.5.3 --- Results from the film insolubility and conductivity measurements --- p.66 / Chapter 4.6 --- Conclusion --- p.67 / References --- p.68 / Chapter CHAPTER 5 --- Effects of low energy proton bombardment of PEDT-PSS films studied by XPS and AFM --- p.90 / Chapter 5.1 --- Introduction --- p.90 / Chapter 5.2 --- XPS and c-AFM studies of PEDT-PSS films bombarded by H+ --- p.90 / Chapter 5.2.1 --- Sample preparation --- p.90 / Chapter 5.2.2 --- Results and discussion --- p.90 / Chapter 5.3 --- Conductivity measurements --- p.92 / Chapter 5.3.1 --- Sample preparation for conductivity measurements --- p.92 / Chapter 5.3.2 --- Results and discussion --- p.93 / Chapter 5.4 --- Conclusion --- p.93 / References --- p.93 / Chapter CHAPTER 6 --- Concluding Remarks and Future Works --- p.106 / Chapter 6.1 --- Concluding Remarks --- p.106 / Chapter 6.2 --- Future Work --- p.106 / Chapter APPENDIX --- The SSH model in describing polyacetylene --- p.108 / Chapter Part 1 --- Assumptions of the SSH model --- p.108 / Chapter Part 2 --- Bloch model and SSH model. --- p.113 / Reference --- p.117

by Xu Mingsheng. / "October 2002." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. Ann Arbor, MI : ProQuest Information and Learning Company, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web.

Xue Kun. / "July 2005." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2005. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract in English and Chinese.

by Man Wah-Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 177-180). / LIST OF FIGURES / LIST OF TABLES / abstract --- p.1 / Chapter 1. --- introduction --- p.3 / Chapter 2. --- fabrication process / Chapter 2-1 --- INTRODUCTION --- p.7 / Chapter 2-2 --- PROCESS DEVELOPMENT --- p.8 / Chapter 2-3 --- FABRICATION PROCEDURES FOR TIN FILMS --- p.10 / Chapter 2-4 --- FABRICATION PROCEDURES FOR TIN OXIDE FILMS --- p.14 / Chapter 2-5 --- FABRICATION THEORY --- p.21 / Chapter 2-6 --- OXYGEN ION IMPLANTATION OF TIN FILMS --- p.24 / Chapter 3. --- structural characterization / Chapter 3-1 --- INTRODUCTION --- p.30 / Chapter 3-2 --- MICROSTRUCTURE / Chapter 3-2-1 --- SOME RELATED THEORIES OF GRAIN GROWTH / Chapter (1) --- Classical Theory of Grain Growth --- p.30 / Chapter (2) --- Hillock Growth --- p.31 / Chapter (3) --- Dislocation Creep Theory --- p.33 / Chapter (4) --- Biaxial Stress in Thin Films --- p.35 / Chapter (5) --- Surface Cluster Growth --- p.37 / Chapter 3-3 --- EXPERIMENTATION AND RESULTS / Chapter 3-3-1 --- MICROSTRUCTURAL ANALYSIS UNDER OPTICAL MICROSCOPE --- p.39 / Chapter 3-3-2 --- THE STRESS AND HILLOCK HEIGHT ANALYSIS OF TIN OXIDE FILMS --- p.48 / Chapter 3-3-3 --- MICROSTRUCTURAL ANALYSIS BY MEANS OF ATOMIC FORCE MICROSCOPE (AFM) --- p.52 / Chapter 3-3-4 --- MICROSTRUCTURAL ANALYSIS BY X-RAY DIFFRACTION --- p.69 / Chapter 3-3-5 --- SURFACE ANALYSIS BY MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY / Chapter (1) --- Introduction --- p.73 / Chapter (2) --- Basic Theory --- p.73 / Chapter (3) --- Experimentation And Results --- p.75 / Chapter 3-3-6 --- SURFACE STUDY OF ION IMPLANTED TIN OXIDE FILMS / Chapter (1) --- Experimental Results --- p.82 / Chapter 3-4 --- DISCUSSION / Chapter 3-4-1 --- QUALITATIVE ANALYSIS OF MICROSTRUCTURE WITH THE OPTICAL MICROSCOPE --- p.88 / Chapter 3-4-2 --- QUALITATIVE ANALYSIS OF MICROSTRUCTURE WITH SEM AND AFM / Chapter (1) --- Grain Growth of Tin Oxide Films --- p.89 / Chapter (2) --- Dependence of Grain Size on Deposition Rate --- p.91 / Chapter (3) --- Dependence of Grain Size on Film Thickness --- p.92 / Chapter (4) --- Dependence of Grain Size on Substrate Temperature --- p.92 / Chapter (5) --- Origin of Hillock Growth of Tin Oxide Films --- p.93 / Chapter 3-4-3 --- FILM COMPOSITIONAL ANALYSIS WITH X-RAY DIFFRACTION --- p.95 / Chapter 3-4-4 --- SURFACE ANALYSIS WITH X-RAY PHOTOELECTRON SPECTROSCOPY …… --- p.95 / Chapter 3-4-5 --- SURFACE ANALYSIS OF OXYGEN IMPLANTED TIN FILMS --- p.96 / Chapter 4. --- OPTICAL CHARACTERIZATION / Chapter 4-1 --- INTRODUCTION --- p.98 / Chapter 4-2 --- THEORY / Chapter (1) --- Free Electron Model --- p.99 / Chapter (2) --- Effect of Film Thickness --- p.100 / Chapter (3) --- Effect of Oxygen Contents --- p.101 / Chapter (4) --- Electron-Lattice Interaction and Bandgap Studies --- p.102 / Chapter 4-3 --- EXPERIMENTATION AND RESULTS --- p.105 / Chapter 4-4 --- DISCUSSION / Chapter 4-4-1 --- BANDGAP STUDIES FOR TIN OXIDE FILMS WITH DIFFERENT DEPOSITION CONDITIONS / Chapter (1) --- Variation of Film Thickness --- p.122 / Chapter (2) --- Film Appearance --- p.123 / Chapter (3) --- Variation of Substrate Temperature --- p.123 / Chapter (4) --- Variation of Oxidation Conditions --- p.123 / Chapter 5. --- ELECTRICAL CHARACTERIZATION / Chapter 5-1 --- INTRODUCTION --- p.126 / Chapter 5-2 --- RELATED THEORY / Chapter 5-2-1 --- CURRENT-VOLTAGE (I-V) CHARACTERISTICS --- p.127 / Chapter 5-2-2 --- CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS --- p.131 / Chapter 5-2-3 --- RELATION OF ELECTRICAL TO STRUCTURAL PROPERTIES / Chapter (A) --- Effects of Deposition Conditions --- p.133 / Chapter (B) --- Effects of Grain Boundaries --- p.133 / Chapter (C) --- Effects of Ionic Impurities --- p.134 / Chapter (D) --- Effects of The Interface Properties --- p.134 / Chapter 5-2-4 --- MEASURING TECHNIQUES / Chapter (A) --- I-V Measurment of Tin Oxide on a Silicon Substrate --- p.136 / Chapter (B) --- C-V Measurement of Tin Oxide Films on Silicon Substrates --- p.137 / Chapter (C) --- Electrical Measurement of Tin Oxide Films on a Quartz Substrate --- p.137 / Chapter 5-3 --- EXPERIMENTATION --- p.138 / Chapter 5-4 --- RESULTS --- p.141 / Chapter 5-5 --- DISCUSSION / Chapter 5-5-1 --- Analysis of the Conduction Mechanism for Sn02/Si n-p Heterojunctions --- p.161 / Chapter 5-5-2 --- Analysis of the Conduction Mechanism for Sn02/Si n-n Heterojunctions --- p.162 / Chapter 5-5-3 --- Effect on the Conduction Mechanisms of Film Thickness --- p.164 / Chapter 5-5-4 --- Effect on the Conduction Mechanisms of Oxidation Time --- p.166 / Chapter 5-5-5 --- Interfacial Properties of SnOx/Si Heterojunctions --- p.166 / Chapter 5-5-6 --- Electrical Properties of SnOx Films on Quartz / Chapter (1) --- Dependence of Film Conductivity on Measuring Temperatures --- p.168 / Chapter (2) --- Dependence of Film Conductivity on Oxidation Time --- p.168 / Chapter (3) --- Dependence of Film Conductivity on Oxidation Temperature --- p.169 / Chapter (4) --- Invariance of Film Conductivity at Some Certain Measuring Temperatures --- p.170 / Chapter (5) --- Activation Energy of Sn02 Films on Quartz --- p.170 / Chapter 6. --- CONCLUSIONS --- p.172 / Chapter 7. --- FUTURE WORKS --- p.175 / Chapter 8. --- REFERENCES --- p.177 / Chapter 9. --- APPENDICES / Chapter 9-1 --- APPENDIX A List of photos --- p.181 / Chapter 9-2 --- APPENDIX B (1) ED AX results for some selected regions on samples with hillocks --- p.182 / Chapter (2) --- Relations between mean surface roughness and oxidation conditions --- p.185 / Chapter (3) --- XPS original data and typical XPS spectra for vacuum- evaporated SnO2 thin film --- p.186 / Chapter 9-3 --- "APPENDIX C Variations of optical parameters, refractive index n and extinction coefficient k in visible region with different oxidation conditions" --- p.189 / Chapter 9-4 --- APPENDIX D Electrical results for Sn02/Si heterojunction s --- p.191 / Chapter 9-5 --- APPENDIX E Calculations of band diagram for Sn02/Si heterojunctions --- p.194 / Chapter 9-6 --- APPENDIX F Resistivity versus impurity concentration for silicon at 300K --- p.196

Yuan, Wenxiang = CCTO陶瓷材料的制备和性质研究 / 苑文香. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 63-67). / Text in English; abstracts in English and Chinese. / Yuan, Wenxiang = CCTO tao ci cai liao de zhi bei he xing zhi yan jiu / Yuan Wenxiang. / Acknowledgement --- p.ii / Abstract --- p.iii / Contents --- p.v / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Structure --- p.1 / Chapter 1.3 --- Models --- p.3 / Chapter 1.3.1 --- Parallel RC --- p.3 / Chapter 1.3.2 --- Two parallel RCs in series --- p.5 / Chapter 1.4 --- Motivation --- p.7 / Chapter 1.5 --- Our work --- p.7 / Chapter Chapter 2 --- Experiment --- p.8 / Chapter 2.1 --- Sources and substrate --- p.8 / Chapter 2.2 --- Preparation of the CCTO samples --- p.8 / Chapter Chapter 3 --- Experimental equipment --- p.13 / Chapter 3.1 --- Furnace --- p.13 / Chapter 3.2 --- X-ray diffraction (XRD) --- p.13 / Chapter 3.3 --- Scanning electron microscopy (SEM) --- p.16 / Chapter 3.4 --- Impedance analyzers --- p.17 / Chapter Chapter 4 --- Selections of the experimental conditions --- p.18 / Chapter 4.1 --- Selection of calcining-process conditions --- p.18 / Chapter 4.1.1 --- Experimental results --- p.18 / Chapter 4.1.2 --- Comparison with the results of other research groups --- p.21 / Chapter 4.2 --- Selection of sintering-process conditions --- p.22 / Chapter 4.2.1 --- CuO volatilization --- p.22 / Chapter 4.2.2 --- CCTO decomposition --- p.24 / Chapter 4.3 --- Optimizing of the Cu/Ca ratio --- p.29 / Chapter Chapter 5 --- Results and discussion --- p.31 / Chapter 5.1 --- Properties of CCTO ceramics sintered at different temperatures for 10 h --- p.32 / Chapter 5.2 --- Properties of CCTO ceramics sintered for different durations at 1000°C --- p.43 / Chapter 5.3 --- Properties of CC3+ΧTO ceramics --- p.52 / Chapter 5.4 --- Discussion --- p.58 / Chapter Chapter 6 --- Conclusions --- p.61 / References --- p.63

Huang, Chun Fuk = 間層對龐磁阻多層薄膜的傳導與擴散特性的影響 / 黃真福. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Huang, Chun Fuk = Jian ceng dui pang ci zu duo ceng bo mo de chuan dao yu kuo san te xing de ying xiang / Huang Zhenfu. / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Magnetoresistance --- p.1 / Chapter 1.1.1 --- Giant magnetoresistance (GMR) --- p.3 / Chapter 1.1.2 --- Colossal magnetoresistance (CMR) --- p.5 / Chapter 1.1.3 --- Double exchange mechanism --- p.6 / Chapter 1.1.4 --- Jahn-Teller effect --- p.10 / Chapter 1.1.5 --- Tolerance factor --- p.12 / Chapter 1.1.6 --- Effect of Doping --- p.14 / Chapter 1.1.7 --- Charge-ordering effect --- p.16 / Chapter 1.1.8 --- Phase separation and percolation theory --- p.17 / Chapter 1.2 --- Our motivation --- p.18 / Chapter 1.3 --- Review of manganite multilayer system --- p.20 / Chapter 1.4 --- Scope of this thesis --- p.21 / References --- p.22 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.24 / Chapter 2.1.1 --- Facing-target sputtering (FTS) --- p.24 / Chapter 2.1.2 --- Vacuum system --- p.26 / Chapter 2.2 --- Oxygen annealing system --- p.28 / Chapter 2.3 --- Characterization --- p.30 / Chapter 2.3.1 --- α-step profilometer --- p.30 / Chapter 2.3.2 --- X-ray diffraction (XRD) --- p.30 / Chapter 2.3.3 --- Resistance measurement --- p.32 / References --- p.34 / Chapter Chapter 3 --- Epitaxial growth of LCMO and LSMO single layer thin films / Chapter 3.1 --- Fabrication and characterization of LCMO and LSMO targets --- p.35 / Chapter 3.2 --- Epitaxial growth of LCMO and LSMO thin films --- p.41 / Chapter 3.2.1 --- Substrate materials --- p.41 / Chapter 3.2.2 --- Deposition conditions --- p.42 / Chapter 3.2.3 --- Deposition procedures --- p.44 / Chapter 3.3 --- Characterization of single layer films --- p.45 / References --- p.50 / Chapter Chapter 4 --- Lao.67Ca0.33MnO3/La0.4Ca0.6MO3 multilayers and La0.67Ca0.33MnO3 /La0.2̐ơإSr0.75MnO3 multilayers / Chapter 4.1 --- Sample preparation --- p.51 / Chapter 4.2 --- As-grown multilayers --- p.53 / Chapter 4.2.1 --- Structural characterization of as-grown samples --- p.53 / Chapter 4.2.2 --- Transport properties of as-grown samples --- p.59 / Chapter 4.3 --- Oxygen post annealing of multilayer thin films --- p.68 / Chapter 4.3.1 --- Introduction to post annealing of manganite oxides --- p.68 / Chapter 4.3.2 --- Oxygen post annealing conditions --- p.69 / Chapter 4.4 --- Results and discussion of oxygen post-annealing samples --- p.71 / Chapter 4.4.1 --- Structural characterization of oxygen post-annealing samples --- p.71 / Chapter 4.1.1.1 --- Effect of chemical composition --- p.71 / Chapter 4.4.1.2 --- Effect of relative thickness --- p.73 / Chapter 4.4.2 --- Transport properties of oxygen post-annealing samples --- p.84 / References --- p.95 / Chapter Chapter 5 --- Conclusion --- p.97

The trend over the last 50 years of down-scaling the silicon transistor to achieve faster computations has led to doubling of the number of transistors and computation speed over about every two years. However, this trend cannot be maintained due to the fundamental limitations of silicon as the main material for the semiconducting industry. Therefore, there is an active search for exploration of alternate materials. Among the possible candidates that can may [sic] be able to replace silicon is graphene which has recently gained the most attention. Unique properties of graphene include exceedingly high carrier mobility, tunable band gap, huge optical density of a monolayer, anomalous quantum Hall effect, and many others. To be suitable for microelectronic applications the material should be semiconductive, i.e. have a non-zero band gap. Pristine graphene is a semimetal, but by the virtue of doping the graphene surface with different molecules and radicals a band gap can be opened. Because the electronic properties of all materials are intimately related to their atomic structure, characterization of molecular and electronic structure of functionalizing groups is of high interest. The ab-inito (from the first principles) calculations provide a unique opportunity to study the influence of the dopants and thus allow exploration of the physical phenomena in functionalized graphene structures. This ability paves the road to probe the properties based on the intuitive structural information only. A great advantage of this approach lies in the opportunity for quick screening of various atomic structures. We conducted a series of ab-inito investigations of graphene functionalized with covalently and hapticly bound groups, and demonstrated possible practical usage of functionalized graphene for microelectronic and optical applications. This investigation showed that it is possible [to] produce band gaps in graphene (i.e., produce semiconducting graphene) of about 1 eV, without degrading the carrier mobility. This was archived by considering the influence of those adducts on electronic band structure and conductivity properties.

Biological cells and subcellular organelles are surrounded by membranes to form compartments performing specialized functions. Adsorption or partitioning of biologically active compounds into the membrane is the first step in the process of modification of cell function. This work is concerned with the problem of distribution of charged molecules between water and electrically charged membrane surface and between water and octanol. Part I of this thesis is focused on the electrostatic interactions taking place between charges on the membrane and ions present in the aqueous region of the membrane/water interface. The objective was to explore theoretically the origin of anomalous behavior of Ruthenium Red (RuR), a positively charged hexavalent ion. It was discovered in studies of RuR adsorption to negatively charged membranes that within the framework of the Gouy-Chapman theory of the membrane/water interface, RuR behaves as an ion with effective charge less than its physical charge. Moreover, the effective charge was found to be dependent on the density of electric charge at the membrane surface. Two theoretical models of the interfacial region were examined: the Rod Model and the Maximum Density Model. The Rod Model takes into account steric constraints imposed on RuR at the vicinity of the membrane surface. The Maximum Density Model attempts to account for non-ideal behavior by including repulsive interactions. These theoretical studies illustrate the consequences of finite size and ion-ion interactions of adsorption of large molecular ions to electrically charged membrane surfaces. Part II is an experimental study whose objective was to determine the partition coefficient of the negatively charged 2,3,4,5-tetrachlorophenol (TeCP) between water and octanol. The study was based on spectrophotometric measurements of the equilibrium concentrations of TeCP in water and octanol as a function of pH. The octanol/water partition coefficient for both the non-ionized and ionized species of TeCP were determined. It was found that the partition coefficient of ionized TeCP to lipid membrane is about 400 times greater than that for octanol. This result supports the hypothesis that the octanol/water partition coefficient of ionized chlorophenols cannot be used for predicting their distribution between water and lipid-bilayercontaining elements of the environment.

Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years. However, the trend of transistor miniaturization is fast approaching its limit. Hence, alternate and innovative solutions are necessary to tackle this problem and this propels the research for finding novel materials with unique properties. The isolation of graphene, a single layer of graphite in 2004 had dramatically pioneered a new regime of research and investigation as a potential material to replace traditional Si. Graphene is the most widely studied two dimensional (2D) material exhibiting fascinating electronic, optoelectronic and electrochemical properties. Room temperature graphene has very high carrier mobility, a hundred times larger than that of Si, but it lacks a bandgap preventing its application in digital electronics. However, the advent of graphene initiated exploration of other 2D materials as a possible replacement for Si for future generation of electronic devices. Other 2D layered materials include transition metal dichalcogenides (TMDs), other layered metal chalcogenides, black phosphorus (BP), boron nitride (BN) etc which are also attractive due to fascinating electronic band structure and layer dependent properties that have demonstrated potential applications in optoelectronics and semiconductor devices. Metal chalcogenides are among the well-studied layered materials that have been isolated as high-quality and two-dimensional crystals. Among the 2D layered metal chalcogenide materials is tin selenide (SnSe), which belongs to group IV--VI that has attracted considerable attention due to its interesting structural and optical properties, hence it has potential applications in optoelectronics, photovoltaics, memory, energy storage, and catalysis. To date, SnSe films have been produced by exfoliation or chemical vapor deposition that produces flaky films. In this research, uniform, smooth and high quality SnSe thin films were grown over large area (5cm x 5cm) Si/SiO2 substrates using Atomic Layer Deposition (ALD). Films were grown over a temperature range of 350°C to 450°C, which exhibit p- type semiconductor characteristics. ALD is perfect for the growth of layered materials due to its precise controllability of film composition and thickness as the growth proceeds layer by layer. Structural and optical properties of the as-grown films were investigated using X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). These analyses show growth of 2 dimensional, orthorhombic phase films. Magnetic analysis shows a paramagnetic behavior. Back-gated transistors were fabricated for electrical characterization which showed p-type conductance, with an average hole mobility of 10 cm2/V.s and Ion/Ioff ratio of ~105.

Semiconducting properties and related defect disorder for well defined TiO2 single crystal were studies. Semiconducting properties have been determined using simultaneous measurements of two independent electrical properties, including electrical conductivity, ??, and thermoelectric power, S, at elevated temperatures (1073-1323 K) in the gas phase of controlled oxygen activity (10-10 Pa &lt p(O2) &lt 75 kPa). Measurements of s and S were conducted (i) in the gas/solid equilibrium and (ii) during equilibration. Oxygen vacancies have been identified as the predominant defects in TiO2 over a wide range of p(O2). Individual conductivity components related to electrons, electron holes and ions, were determined from the obtained ?? data. The effect of p(O2) on these individual components was considered in the form of a diagram. This work led to the discovery of the formation and diffusion of Ti vacancies. However, the obtained diffusion data indicate that, in the temperature ranges commonly used in studies of semiconducting properties (1000-1400K), the Ti vacancies concentration is quenched and may thus be assumed constant. In addition it was shown that Ti vacancies in appreciable concentrations form only during prolonged oxidation. It was determined that the discrepancies in the reported n-p transition point are related to the concentration and spectrum of impurities as well as the concentration of Ti vacancies. It has been shown that the n-p transition point in high-purity TiO2 is determined by the Ti vacancy concentration. A well defined chemical diffusion coefficient, Dchem, was determined using kinetic data obtained during equilibration. A complex relationship between p(O2) and Dchem was observed. These data showed a good agreement between the obtained diffusion data and defect disorder. Examination of the determined equilibration kinetics, led to the discovery of two kinetic regimes, the result of the transport of defects at different mobilities. The determined data are considered well defined due to the following reasons: 1. The studied specimen was of exceptionally high purity and free of grain boundaries (single crystal) 2. The specimen was studied in the gas phase of controlled and well defined oxygen activity which was continuously monitored. 3. Whenever the experimental data were measured in equilibrium, the gas/solid equilibrium has been verified experimentally. 4. A good agreement between the two, self-confirmatory, electrical properties, including ?? and S has been determined simultaneously and independently. The defect disorder model derived in the present work may be used for tailoring controlled semiconducting properties through the selection of annealing conditions involving the temperature and oxygen activity.