Includes bibliographical references. / 189 leaves, 18, [4] pages : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / Thesis (Ph.D.)--University of Adelaide, Dept. of Physical and Inorganic Chemistry, 1991

Bibliography : leaves 154-163 / ix, 163 leaves : ill ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / Thesis (Ph.D.)--University of Adelaide, Dept. of Physics, and Mathematical Physics, 1993

No abstract available

Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2008. / Committee Chair: King, William; Committee Member: Graham, Samuel; Committee Member: Hesketh, Peter

Thesis (MScEng)--University of Stellenbosch, 2003. / ENGLISH ABSTRACT: This thesis investigates the credibility of the vanadium redox flow energy storage system, sometimes termed vanadium redox battery (VRB). The focus is on the use of this technology in peak-shaving and load-leveling applications. The initial problem is to find a suitable mathematical model for representing the daily load profile. A sinusoidal function is identified as an elementary approximation of the first order. Due to the periodicity characteristics that are inherent in a daily load profile, the Fast Fourier Transform (FFT) algorithm is identified as a mathematical model that closely resembles a load profile. The main theme in this thesis is the determination of an optimal solution during the peak-shaving process. In this particular context, the optimal solution refers to the following: With the energy capacity of the VRB and the power rating of the entire system considered as the constraints, the interest is on (i) the constant power that the VRB can deliver in order to bring down the maximum demand quite significantly, (ii) and the time interval in which this constant power is delivered. Therefore, the VRB power delivered during peak-shaving (PVRB) and the corresponding time interval are the main two parameters under consideration in the optimization process. The mathematical algorithm that can be used to determine suitable values for these two parameters is developed. Maple" V 5.1 is used for determining the solution analytically. The obtained results are verified by simulation with Excel". The investigation into the economic benefits that may be derived from the utilization of the vanadium energy storage device is also presented. / AFRIKAANSE OPSOMMING: Hierdie tesis ondersoek die waarde en toepassing van die vadium "redox" vloei energie stoorstelsel (VRB). Die fokus is op die gebruik van hierdie tegnologie om pieklas te verminder en om laste meer egalig te maak. Die aanvanklike probleem is om 'n geskikte wiskundige model vir die daaglikse las-profiel te kry. Deur gebruik te maak van sinus-komponente en die toepassing van die Vinnige Fourier Transform (FFT) is hierdie probleem opgelos. Die hooftema van hierdie werk is om 'n analitiese oplossing te vind vir die optimale toepassing van die konsep vir pieklas vermindering. In hierdie konteks verwys die optimale oplossing na die volgende: Met die gegewe verrnoe van die VRB stelsel en drywingsvermoe van die kragelektronika is die vrae rondom (i) die konstante drywing wat die VRB kan lewer om die maksimum aanvraag van die las beduidend te verminder en (ii) die tydsduur waarin dit plaasvind. Dus is die twee veranderlikes waarvoor oplossings in die optimale proses gesoek word die drywing (PVRS) en die tyd-interval daarvan. Die wiskundige algoritme is met die hulp van Maple® V5.1 ontwikkel. Die resultate is daarna met behulp van simulasies in Excel® getoets. 'n Analise van die moontlike ekonomiese voordele is ook ondersoek.

Made available in DSpace on 2014-06-11T19:23:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-02-11Bitstream added on 2014-06-13T20:30:15Z : No. of bitstreams: 1 bellucci_fs_me_bauru.pdf: 1672549 bytes, checksum: 747a54cb81f0feea1d7b6de7d89f3600 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O objetivo deste trabalho foi estudar efeitos de escala e tamanho através de medidas de permissividade dielétrica de partículas nanométricas e/ou nanoestruturadas do óxido policátion niobato de potássio dopado com estrôncio (K'Sr IND. 2' N'b IND. 5' 'O IND. 15'), um óxido ferroelétrico da família tetragonal tungstênio bronze (TTB). A determinação da constante dielétrica de nanopartículas foi realizada através da técnica de mistura. Nesta técnica, nanopartículas de permissividade dielétrica desconhecidas são dispersas em um meio de permissividade dielétrica conhecida. A partir da resposta dielétrica da mistura a permissividade dielétrica das nanopartículas foram calculadas utilizando modelagem numérica via circuitos elétricos equivalentes. A fase K'Sr IND. 2' N'b IND. 5' 'O IND. 15, foi preparada por rota química (método poliol modificado), a temperatura de calcinação necessária à obtenção de nanopartículas foi otimizada e partículas nanoestruturadas de K'Sr IND. 2' N'b IND. 5' 'O IND. 15' monofásico foram avaliadas. A caracterização estrutural foi realizada utilizando as técnicas de difratometrica de raiox x (DRX), espectroscopia vibracional de absorção na região do infravermelho (FTIR) e ultravioleta visível (UV/vis) a partir das quais se avaliaram os parâmetros de rede, cristalinidade relativa, tamanho médio de cristalito, volume da cela unitária e energia de gap. Utilizando a técnica de espectroscopia de impedância entre 5 Hz e 3 MHz foram estudadas as propriedades dielétricas das amostras através de medidas de permissividade confirmando a existência de ferroeletricidade nas amostras e foi identificado o efeito de tamanho nas propriedades dielétricas das nanopartículas. / This work aimed the study of size effect through permittivity measurements of nanometric particles and/or nanostructured of niobate oxide K'Sr IND. 2' N'b IND. 5' 'O IND. 15', a ferroelectric oxide belonging to the tetragonal tungsten bronze family (TTB). Determination of nanoparticles dielectric constant was done using the mixture technique. In this technique, nanoparticles of unknown dielectric permittivity are dispersed in a medium of know dielectric permittivity. From the dielectric response of the mixture, the dielectric permittivity of the nanoparticles is calculated using numerical modeling by means of equivalent circuits. The K'Sr IND. 2' N'b IND. 5' 'O IND. 15' phase was prepared using a chemical route (polyol modified method) and the optmization of the temperature calcination was performed aiming to obtain nanoparticles and the resulting nanostructured particles were evaluated. The structural characterization was carried out by X-ray diffraction (XRD), infrared absorption spectroscopy (FTIR) and UV-Vis spectroscopy allowing the evaluation of cell parameters, relative crystallinity and crystallite size, unitary cell volume and gap energy. The impedance spectroscopy technique in the range from 5 Hz to 3 MHz to study dielectric properties of samples was used. The presence of ferroelectric phase in samples was confirmed and the size effect was identified on nanoparticles.

Physiological functions of a biomacromolecule seem to be closely related to its molecular conformations. The knowledge of any conformational changes due to changes in its environment may lead to a proper understanding of its functions. Hyaluronic acid, a biomacromolecule with unusually high molecular weight and some important biological functions is the subject of the present work. A temperature-dependent transition in hyaluronate solution of 120 mg/ml concentration was observed at physiological temperature. It is shown that this temperature-dependent behavior can be related to the orientational polarizability term in the Debye theory of polar molecules in liquids.

Orientador: José Roberto Ribeiro Bortoleto / Banca: Monica Alonso Cotta / Banca: Tersio Guilherme de Souza Cruz / O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi / Resumo: Neste trabalho filmes finos de ZnO foram depositados em substratos de vidro pela técnica de RF magnetron sputtering. Como precursores foram utilizados um alvo de zinco metálico e gás oxigênio. Duas séries de filmes finos de ZnO foram obtidas. Na primeira, foram obtidos filmes de ZnO eletricamente isolantes com transmitância óptica acima de 80%. Na segunda série de deposição, os filmes finos de ZnO também apresentaram transmitância óptica na região do visível em torno de 80%. Porém, nesta série os filmes apresentaram baixos valores de resistividade elétrica, em torno de 1,6 x 10-3Ώ cm. Os resultados de morfologia superficial das duas séries, mostraram que as estruturas de grãos dos filmes finos de ZnO evoluíram em tamanho e altura com o aumento da espessura. As análises de difração de raios X realizadas para os filmes de ZnO mostraam um pico preferencial no plano (002), correspondente a estrutura wurtzita do ZnO, classificando os filmes como policristalinos / Abstract: In this work ZnO films were deposited on glass substrates by RF magnetron sputtering technique. A target of metallic zinc and oxygen gas were used as precursors. Two series of ZnO thin films were obtained. in the first ZnO films were obtained with high optical transmittance, above 80%, but the films showed a high electrical resistivity. In the second set of depositions, the ZnO thin films also showed a high optical transmittance in the visible region, around 80%. However, this samples had low resistivity values, about 1.6x10-3Ώ cm. The results of the surface morphology of the two series showed that the grain structures of ZnO thin films developed in size and heigh with increasing thickness. The analysis of X-ray diffraction for the ZnO films showed a peak in the preferred plan (002), corresponding to the ZnO wurtzite structure, classifying films as polycrystalline / Mestre

Made available in DSpace on 2014-06-11T19:30:19Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-02-29Bitstream added on 2014-06-13T21:00:49Z : No. of bitstreams: 1 silva_ep_me_bauru.pdf: 1073739 bytes, checksum: 6cb2c38a70de68a1096aadef2cb3a584 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Neste trabalho filmes finos de ZnO foram depositados em substratos de vidro pela técnica de RF magnetron sputtering. Como precursores foram utilizados um alvo de zinco metálico e gás oxigênio. Duas séries de filmes finos de ZnO foram obtidas. Na primeira, foram obtidos filmes de ZnO eletricamente isolantes com transmitância óptica acima de 80%. Na segunda série de deposição, os filmes finos de ZnO também apresentaram transmitância óptica na região do visível em torno de 80%. Porém, nesta série os filmes apresentaram baixos valores de resistividade elétrica, em torno de 1,6 x 10-3Ώ cm. Os resultados de morfologia superficial das duas séries, mostraram que as estruturas de grãos dos filmes finos de ZnO evoluíram em tamanho e altura com o aumento da espessura. As análises de difração de raios X realizadas para os filmes de ZnO mostraam um pico preferencial no plano (002), correspondente a estrutura wurtzita do ZnO, classificando os filmes como policristalinos / In this work ZnO films were deposited on glass substrates by RF magnetron sputtering technique. A target of metallic zinc and oxygen gas were used as precursors. Two series of ZnO thin films were obtained. in the first ZnO films were obtained with high optical transmittance, above 80%, but the films showed a high electrical resistivity. In the second set of depositions, the ZnO thin films also showed a high optical transmittance in the visible region, around 80%. However, this samples had low resistivity values, about 1.6x10-3Ώ cm. The results of the surface morphology of the two series showed that the grain structures of ZnO thin films developed in size and heigh with increasing thickness. The analysis of X-ray diffraction for the ZnO films showed a peak in the preferred plan (002), corresponding to the ZnO wurtzite structure, classifying films as polycrystalline

Orientadores: Peter Jurgen Tatsch, Stanislav A. Moshkalyov / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-15T01:24:44Z (GMT). No. of bitstreams: 1 Nobre_FranciscoDiegoMartins_M.pdf: 7000328 bytes, checksum: ea69e5992c8dcac9e0a9aeab6ccf2ca5 (MD5) Previous issue date: 2009 / Resumo: Este trabalho apresenta o desenvolvimento de processos de corrosão de filmes de silício policristalino por plasmas contendo flúor e cloro, para aplicações em dispositivos MEMS (Micro-Electro-Mechanical-Systems) e MOS (Metal Óxido Semicondutor). A corrosão foi feita em um reator RIE (Reactive Ion Etching) marca Applied Materials, modelo PE8300A. Para aplicação em MEMS foram feitas corrosões de silício policristalino, com perfis anisotrópicos e seletividade maior que 20 para óxido de silício. As misturas gasosas utilizadas na corrosão foram: Ar/SF6 e Ar/SF6/Cl2. Para avaliar melhor a evolução do perfil de corrosão, foram utilizadas amostras com filmes espessos de silício policristalino (>2 µm). Para aplicação em eletrodo de transistores MOS foi feito o afinamento de linhas de 2,5 µm para 500 nm de largura, com perfil vertical (A~0,95). Foi feita uma análise da rugosidade da superfície antes e depois dos processos de corrosão com plasma de Ar/SF6 e Ar/SF6/Cl2. Como máscara utilizaram-se linhas sub-micrométricas de platina, 300 nm de largura, depositas em equipamento FIB, sistema de feixe de íons focalizados. Foram ainda realizados processos de corrosão de dióxido de silício com plasma de misturas de Ar/SF6, objetivando altas taxas de corrosão, e de remoção de máscaras de fotorresiste com plasma de oxigênio. Os processos foram caracterizados com vários equipamentos. Um Perfilômetro foi utilizado para medir as profundidades das corrosões, para a determinação das taxas de corrosão. Um elipsômetro e um interferômetro foram utilizados nas medidas das espessuras e dos índices de refração dos filmes utilizados. Imagens SEM (Scanning Electron Microscopy) dos filmes corroídos foram feitas para analisar o perfil e determinar o mecanismo de corrosão para cada mistura, e imagens Focused Ion Beam (FIB) para analisar as estruturas sub-micrométricas. / Abstract: This work presents the results and the discussion about mechanisms of plasma etching of polysilicon and silicon films for applications in MEMS and MOS devices. The etching was performed in a conventional reactor of plasma etching, Applied Materials PE8300A model, in a RIE mode (Reactive Ion Etching). For application in MEMS, polysilicon etching with anisotropic profile and high selectivity (>20) for silicon oxide was obtained. The mixtures used in etching were SF6/Ar/Cl2 and SF6/Ar/Cl2. The evolution of the etching profile is better evaluated using polysilicon thick films (>2 µm). For application in MOS transistors electrode, 2,5 µm to 500 nm thinning was obtained with anisotropic profile (At~0,95). For surface routh analisys, before and after the etching processes in Ar/SF6 and Ar/SF6/Cl2 plasmas, sub-micrometric polysilicon lines, with platinum mask deposited by FIB, were etched. Next, silicon dioxide etching processes were executed using Ar/SF6 mixtures in order to obtain high etching rates. Finally, photoresist masks were removed without compromising the adjacent material by the use of oxygen. The films were characterized with the use of a variety of equipment. The Profiler was used to measure the etching depth, and therefore the etching rate was evaluated. / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica