Le poly(3-hexylthiophène) régiorégulier (rr-P3HT) est l’un des matériaux phare pour les applications en électronique plastique. Afin d’améliorer les performances des dispositifs, il est important de comprendre et de contrôler la structure et la morphologie de la couche active. Des films minces de rr-P3HT cristallins et orientés peuvent être obtenus par epitaxie directionnelle par cristallisation (DEC) de 1,3,5-trichlorobenzène (TCB). Dans ce travail de thèse, nous présentons les avantages de la méthode DEC pour (i) déterminer la structure cristalline du rr-P3HT et pour (ii) étudier les fibres « shish-kebab », une morphologie alternative du rr-P3HT. La première partie de ce manuscrit consiste en l’analyse structurale par diffraction électronique de la forme I du P3HT obtenue dans les films epitaxiés. Afin d’affiner le modèle structural, nous avons fait varier la conformation des chaînes latérales. Dans un deuxième temps, nous avons appliqué ce même protocole afin de résoudre la structure du second polymorphe du P3HT (forme II) grâce à l’obtention de monocristaux parself-seeding. La deuxième partie du manuscrit est consacrée à l’élaboration de fibres orientées dites en « shish-kebab » par épitaxie dans un mélange TCB/Pyridine. La cinétique de croissance ainsi que l’orientation des chaînes de P3HT sont étudiés afin d’optimiser la méthode de préparation des fibres. L’effet de la masse moléculaire sur leur formation a également été évalué. Finalement les propriétés de transport de charges au sein de ces fibres ont été étudiées grâce à l’élaboration de transistors à effet de champ. / Regioregular poly(3-hexylthiophene) (rr-P3HT) is one of the promising materials for plastic electronic applications. Understanding as well as controlling the structure and morphology of the active layer is essential to improve the device efficiency. Highly crystalline and highly oriented rr-P3HT thin films can be obtained via directional epitaxial crystallization (DEC) in 1,3,5-trichlorobenzene (TCB). In this dissertation, we present the benefits of DEC method to (i) determine the crystal structure of rr-P3HT and (ii) to study shish-kebab fibers, an alternative morphology of rr-P3HT. The first part of this dissertation is related to the structural analysis of rr-P3HT form-I by using electron diffraction analysis on the epitaxied film. Furthermore, the modification of side chain conformation is used to improve the structural model. Finally, the determination protocol is also applied to resolve the preliminary crystal structure of rr-P3HT form II prepared by self-seeding method. The second part of thisdissertation is related to highly oriented shish-kebab fibers of rr-P3HT prepared by epitaxial crystallization in a mixture of TCB and pyridine. The investigations of growth kinetics and orientation of P3HT chains in the fiber are performed in order to determine the optimization of preparation conditions and growth mechanism of the fibers. In addition, the effect of molecular weight on the formation of the fibers is investigated. Finally, the charge transport properties of the fibers are measured by using the field effect transistor configuration.

Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2016-04-08T12:56:51Z No. of bitstreams: 0 / Made available in DSpace on 2016-04-08T12:56:51Z (GMT). No. of bitstreams: 0 / O objetivo deste trabalho foi estabelecer uma metodologia de calibração em termos de dose absorvida na água para câmaras de ionização de placas paralelas a serem utilizadas em feixes de radiação X de energia baixa (10 kV a 100 kV) para fins terapêuticos. Atualmente, no Brasil nenhum laboratório de calibração está oferecendo este tipo de serviço. Para o estabelecimento desta metodologia de calibração foram utilizadas duas câmaras de ionização PTW modelos 23344. Ambas as câmaras foram caracterizadas e testadas qualitativamente segundo recomendações de normas internacionais. Os testes de caracterização realizados foram: a medição da taxa de dose mínima efetiva, a curva de saturação, a eficiência da coleção de íons, a resposta quanto ao efeito da polaridade e a linearidade da câmara com a resposta. Os testes de controle de qualidade aplicados foram: estabilidade em curto e longo prazos, fuga de corrente sem irradiação, fuga de corrente após-irradiação e tempo de estabilização. Para a implantação da metodologia, foram estabelecidas as qualidades de radiação de T-10 a T-100, seguindo as recomendações do código de prática da AIEA. Desta forma, foi possível determinar a grandeza de referência, dose absorvida na água, utilizando-se as duas câmaras de ionizações e em todas as qualidades estabelecidas. / Dissertação (Mestrado em Tecnologia Nuclear) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Orientador: Richard Landers / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-09T10:50:19Z (GMT). No. of bitstreams: 1 Pancotti_Alexandre_M.pdf: 2977317 bytes, checksum: 914d690fda86677fcc9c894c6f408409 (MD5) Previous issue date: 2005 / Resumo: Nesse trabalho nos propomos a estudar a estrutura eletrônica e geométrica de ligas de superfície à partir de filmes ultra finos, da ordem de monocamada atômica , crescidos por MBE sobre substratos monocristalinos. Os filmes finos foram crescidos in situ e analizados por XPS (X-Ray Photoelectron Spectroscopy), PED (Photoelectron Diffraction), LEED (Low Energy Electron Diffraction) e UPS (Ultra Violet Photoelectron Spectroscopy). As ligas de superfície estudas foram InPd, SnPd e SbPd sempre sobre um substrato de Pd(111). Os resultados das medidas PED dos sistemas InPd e SnPd foram interpretadas usando programas tipo MSCD[1]. Foi mostrado que Sn e In em baixa cobertura formam uma estrutura (raiz2 3 x raiz2 3) R 30o ( e o In mostrou uma estrutura (1x1) para filmes com mais de 2 monocamadas, provavelmente na forma de ilhas sobre a superfície do Pd. Estudos anteriores mostraram que Sb sobre Pd(111) também apresenta a fase (raiz2 3 x raiz2 3)R 30o para baixas coberturas[2]. Os modelos que melhor se adequaram aos dados sugerem fortemente que os metais sp(In, Sn,e Sb) não difundem além da segunda monocamada. Durante estes estudos foi observado que a intensidade do satélite de shake-up do Pd tendia a zero para os átomos em contato direto com os metais s / Abstract: The purpose of this report is to present a study of the electronic and geometric structure of surface alloys grown by MBE (Molecular Beam Epitaxy) on single crystal substrates in the sub monolayer regime. The films were grown "in-situ" in the analysis chamber and analyzed by XPS (X-Ray Photoelectron Spectroscopy), PED (Photoelectron Diffraction), LEED (Low Energy Electron Diffraction) and UPS (Ultra Violet Photoelectron Spectroscopy). The alloys studied were InPd, SnPd e SbPd, all grown on the (111) face of a Pd crystal. The PED measurements for InPd and SnPd were analyzed using the MSCD code[3]. It was possible to show that for low coverages both metals formed a (raiz2 3 x raiz2 3) R 30o ( reconstruction and the first inter-planar distances were determined. For films with over two monolayers the In grew with a (1x1) structure probably in the form of islands separated by clean Pd. Previous studies showed that Sb[4] at low coverage also forms a (raiz2 3 x raiz2 3) R 30o ( structure. Our simulations suggest that In, Sn and Sb for the coverages studied do not diffuse beyond the second atomic layer. We also observed that the intensity of the Pd shake up satellite tends to zero for the Pd atoms in contact with these sp metals / Mestrado / Física da Matéria Condensada / Mestre em Física

Dynamical effects are known to reduce the signal to noise ratio in EMCD measurements making them highly dependent on sample thickness. Precession of the electron beam has been shown to reduce these effects in ordinary crystallography. This work investigates precession of the electron beam as a method of reducing the dynamical effects in EMCD using simulations. Simulations are run on BCC Fe in two and three beam conditions. The results show significant effects on the EMCD signal. However, whether these improve the signal quality seems dependent on sample orientation and thickness range. The initial findings reported here are promising and motivate further research.

The direct epitaxial growth of multilayer BN by atomic layer deposition is of critical significance forfo two-dimensional device applications. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) demonstrate layer-by-layer BN epitaxy on two different substrates. One substrate was a monolayer of RuO2(110) formed on a Ru(0001) substrate, the other was an atomically clean Ni(111) single crystal. Growth was accomplished atomic layer deposition (ALD) cycles of BCl3/NH3 at 600 K substrate temperature and subsequent annealing in ultrahigh vacuum (UHV). This yielded stoichiometric BN layers, and an average BN film thickness linearly proportional to the number of BCl3/NH3 cycles. The BN(0001)/RuO2(110) interface had negligible charge transfer or band bending as indicated by XPS and LEED data indicate a 30° rotation between the coincident BN and oxide lattices. The atomic layer epitaxy of BN on an oxide surface suggests new routes to the direct growth and integration of graphene and BN with industrially important substrates, including Si(100). XPS and LEED indicated epitaxial deposition of h-BN(0001) on the Ni(111) single crystal by ALD, and subsequent epitaxially aligned graphene was deposited by chemical vapor deposition (CVD) of ethylene at 1000 K. Direct multilayer, in situ growth of h-BN on magnetic substrates such as Ni is important for spintronic device applications. Solid-state electrolytes (SSEs) are of significant interest for their promise as lithium-ion conducting materials but are prone to degradation due to lithium carbonate formation on the surface upon exposure to atmosphere, adversely impacting Li ion conduction. In situ XPS monitored changes in the composition of the SSE Li garnet (Li6.5La3Zr1.5Ta0.5O12, LLZTaO) upon annealing in UHV and upon Ar+ ion sputtering. Trends in core level spectra demonstrate that binding energy (BE) calibration of the Li 1s at 56.4 eV, yields a more consistent interpretation of results than the more commonly used standard of the adventitious C 1s at 284.8 eV. Annealing one ambient-exposed sample to >1000 K in UHV effectively reduced surface carbonate and oxygen, leaving significant amounts of carbon in lower oxidation states. A second ambient-exposed sample was subjected to 3 keV Ar+ ion sputtering at 500 K in UHV, which eliminated all surface carbon, and reduced the O 1s intensity and BE. These methods present alternative approaches to lithium carbonate removal than heating or polishing in inert atmospheres and are compatible with fundamental surface science studies. In particular, the data show that sputtering at mildly elevated temperatures yields facile elimination of carbonate and other forms of surface carbon. This is in contrast to annealing in either UHV or in noble gas environments, which result in carbonate reduction, but with significant remnant coverages of other forms of carbon.

Ce travail est consacré à la synthèse et à la caractérisation de composés chalcogénures. Pour la plupart nouveaux, ces composés ont la particularité de présenter des structures complexes ou dont le désordre amène une certaine complexité. La première partie de ce manuscrit est consacré à l’étude du nouveau composé monocristallin Ba0,5Cr5Se8 et de la solution solide polycristalline BaxCr5Se8 (0,5 ≤ x ≤ 0,55). Ce composé fait partie de la famille des pseudo-hollandites. Sa structure cristalline a été déterminée par diffraction des rayons X sur monocristal, un abaissement de la symétrie est observé par rapport aux pseudo-hollandites usuelles. Ces composés sont antiferromagnétiques avec une température de transition unique à 58 K, la structure magnétique du composé a été déterminée par diffraction des neutrons sur échantillon polycristallin, et sa maille magnétique correspond à une maille cristalline doublée selon b et c. Les propriétés thermoélectriques des composés sont étudiées, Ba0.5Cr5Se8 présente une ZT de 0,12 à 800 K. La deuxième partie s’est d’abord focalisée sur une structure similaire à la précédente, TlIn5Se8. Toutefois trop résistif, les structures de deux nouveaux composés ont été étudiées : TlIn4,8Cr0,2Se8 et Tl0,98In13,12Se16,3Te2,7. Ce dernier présente sur certains sites un désordre considéré statique. Finalement, le dernier chapitre a permis de mettre en avant des composés de la famille de composé lamellaire MnPSe3, ayant la particularité de présenter une paire P2. La structure du nouveau composé In2Ge2Te6 est résolue et les propriétés thermoélectriques des composés InSiTe3, Cr2Si2Te6, Cr2Ge2Te6 et In2Ge2Te6 sont étudiées. Des défauts d’empilement ont été mis en lumière et expliquent l’impact sur le libre parcours moyen des phonons. L’ensemble des composés dont les propriétés thermoélectriques ont été étudiées présentent des conductivités thermiques faibles, bien en deçà du W.m-1.K-1 dans de nombreux cas. Des ZTs de 0,18 à 673 K et 0,43 à 773 K sont trouvées pour In2Ge2Te6 et Cr2Ge2Te6. / This work has been focused on synthetizing and characterising chalcogenide compounds. Most new, those compounds show complex structures or where disorder bring complexity. The first part of this manuscript is dedicated to the study of the new single-cristalline Ba0.5Cr5Se8 and of the related polycristalline solid-solution BaxCr5Se8 (0.5 ≤ x ≤ 0.55). This compound is part of the pseudo-hollandite family. Its cristalline structure has been resolved by means of single-crystal X-ray diffraction, a lowering of symetryis observed compared to usual pseudo-hollandites. All antiferromagnetic, the compounds exhibit a transition at 58 K, the magnetic structure has been resolved using neutron diffraction on polycrystal and is twice the cristalline one along b and c. Thermoelectric properties of the compounds have been studied and a maximum ZT of 0.12 is observed at 800 K for Ba0.5Cr5Se8. The second section has first focused on a similar structure to the previous one, TlIn5Se8. Although too resistive to be interesting, two new compounds have been studied: TlIn4.8Cr0.2Se8 and Tl0.98In13.12Se16.3Te2.7. The latter quaternary exhibits static disorder on specific crystallographic sites. The last chapter highlights compounds from the lamellar compound MnPSe3 family, with the particularity to possess P2 pairs. The structure of the new In2Ge2Te6 has been resolved and thermoelectric properties of the InSiTe3, Cr2Si2Te6, Cr2Ge2Te6 and In2Ge2Te6 have been studied. Stacking faults were observed in In2Ge2Te6 and explain the impact on the phonon mean free path. All the compounds whose thermoelectric properties have been studied exhibit low thermal conductivity, below 1 W.m-1.K-1 for most of them. ZTs of 0.18 at 673 K and 0.43 at 773 K were found for In2Ge2Te6 and Cr2Ge2Te6.

Ce mémoire porte sur la synthèse et la caractérisation de composés hexaferrites dans le système Ca-Fe-O. Ce travail a permis d’isoler quatre composés sous forme polycristalline ayant pour composition (Ca4Fe5O13)1-x(Fe9O12)1+x (x= 0,334 ; 0,301 et 0,128) et (Ca4Fe5O13)(Fe4O4). Leur structure cristalline a été déterminée à partir de données de diffraction électronique acquises en mode tomographie par précession des électrons et validée à l’aide de l’imagerie haute résolution (HREM et HAADF). Les différents modèles structuraux ont également été confirmés par diffraction des rayons X et des neutrons sur poudre. L’analyse fine des défauts d’intercroissance en imagerie HAADF a révélée des écarts significatifs de composition par rapport à la composition idéale (Ca4Fe5O13)(Fe9O12) à l’origine des trois polymorphes observés. En complément des études menées sur des cristaux de taille micrométrique dans les années 80, l’obtention d’échantillons polycristallins a rendu possible l’étude des propriétés physiques de ces composés. Malgré la complexité de ces structures et la présence de défauts étendus, la spectrométrie Mössbauer a mis en exergue un degré d’oxydation unique pour les atomes de fer (+3) et de confirmer les nombreuses transitions magnétiques initialement détectées par les mesures d’aimantation, ainsi que leur évolution en fonction de l’écart à la stœchiométrie x. Les composés ont également été caractérisés par des mesures de résistivité électrique et de coefficient Seebeck. / This thesis reports on the synthesis and the characterization of hexaferrite compounds in the Ca-Fe-O system. This work has allowed to isolate four polycrystalline compounds presenting the chemical formula (Ca4Fe5O13)1-x(Fe9O12)1+x (x= 0.334; 0.301 and 0.128) and (Ca4Fe5O13)(Fe4O4). Their crystalline structure has been determined using the precession electron diffraction tomography and has been validated through high resolution imaging microscopy (HREM/HAADF). X-ray diffraction and neutron diffraction studies on polycrystalline samples have confirmed the different structural models. Fine analysis of intergrowth defects in HAADF imaging revealed significant deviations in composition with respect to the ideal composition (Ca4Fe5O13)(Fe9O12) at the origin of the three observed polymorphs. In addition to the studies on micron-sized crystals in the 80s, obtaining polycrystralline samples allowed the measurement of their physical properties. Despite the complexity of these structures and the presence of extensive defects, the Mössbauer spectroscopy has highlighted a unique oxidation degree of iron (+3) and confirmed as well the various magnetic transitions initially detected by magnetization measurements, as well as their evolution versus the x deviation value. Electrical resistivity and Seebeck coefficient measurements were performed on the samples.

Higher frequencies in the MHz and GHz range and the increasing miniaturization lead to a higher load of the SAW (surface acoustic wave) metallizations. This higher SAW load and the intrinsic stresses result in a stress induced material transport, called acoustomigration. These microstructural changes can destroy the characteristic of the SAW device. Different Al based material combinations were investigated by different authors to improve the reliability of the metallizations and to delay the cost-intensive change to Cu based metallizations. The Cu based metallizations with TaSiN diffusion barriers were also investigated in this work. The barrier layers are necessary to impede the oxygen diffusion into the Cu layer and the Cu diffusion into the piezoelectric substrate. Also in this work the analytical TEM were used as a tool to investigate these microstructural changes in the SAW electrodes. Chemical changes in the metallizations were analysed by EDXS and EELS. The locally high resolved stress measurement in metallizations is a challenge for the future. The CBED (convergent beam electron diffraction) technique has shown the best resolution, however, it can only be applied to TEM lamellas. The aim of this work was to measure the stress within the SAW metallizations by using the CBED method. With it, we could correlate the microstructural changes with the causing stresses within the metallizations. To qualify the CBED method the thermal expansion of Al and Cu single crystals was measured by using a new model for thin TEM lamallas.

No description available.

In der vorliegenden Arbeit wurde das Wachstum der planaren aromatischen Moleküle Perylen-3,4,9,10-tetracarbonsäure-3,4,9,10-dianhydrid (PTCDA) und Peri-Hexabenzocoronen (HBC) auf verschiedenen einkristallinen Oberflächen von Gold und Graphit untersucht. Zur Abscheidung der Moleküle und zur Herstellung dünner hochgeordnerter organischer Schichten wurde eine Molekularstrahlepitaxieanlage mit mehreren Kammern aufgebaut. Bei den Untersuchungen des Wachstums von PTCDA auf der Au(111)- und Au(100)-Fläche wurden drei Klassen von Strukturen gefunden: Eine Fischgrätenstruktur, deren Gitterparameter und molekulare Anordnung der (102)-Ebene des PTCDA-Kristalls entsprechen, eine quadratische Struktur, sowie eine Stabstruktur, die der (010)-Ebene des PTCDA-Kristalls zugeordnet werden kann. Während die Stabstruktur auf Au(100) ein inkommensurables Wachstum zeigt, konnten alle anderen PTCDA-Strukturen sowohl auf Au(111) als auch auf Au(100) als point-on-line epitaktisch klassifiziert werden. Die HBC-Schichten auf Au(111), Au(100)hex und Graphit zeigen abweichend von der Kristallstruktur eine hexagonale Symmetrie. Auf Graphit wächst HBC in einer kommensurablen Struktur. Auf den beiden Au-Oberflächen existieren mehrere Strukturen, die sich in ihrer Orientierung und ihren Gitterkonstanten unterscheiden. Neben einer dominierenden HBC-Struktur lassen sich auf den Au-Flächen weitere Strukturen beobachten, deren Auftreten durch den Bedeckungsgrad und die Substratmorphologie, d.h. die Stufenzahl und Terrassengröße des Substrates bestimmt wird. Alle diese HBC-Strukturen konnten als kommensurabel klassifiziert werden. Die Anordnung der HBC-Moleküle in Multilagen wurde für das System HBC auf Au(100)hex mit Hilfe molekularmechanischer Berechnungen modelliert. Die HBC-Moleküle sind in der zweiten Lage gegenüber denen der ersten Lage so verschoben, dass die C-Atome der Moleküle eine graphitähnliche Anordnung zeigen. Wie die STM Untersuchung der organischen Heteroschichten aus HBC und PTCDA zeigen, ist es möglich, epitaktische organische Heteroschichten auch von Molekülen herzustellen, die sich in ihren Gitterkonstanten und in der Symmetrie unterscheiden. Erstmals ließen sich derartige Schichten mittels Rastertunnelmikroskopie direkt und durch LEED auch im reziproken Raum abbilden. Aus dem in den STM Bildern sichtbaren Moirékontrast wurde die Orientierung der beiden organischen Gitter bestimmt. PTCDA wächst bezüglich des HBC-Gitters weder kommensurabel noch point-on-line koinzident, zeigt jedoch eine feste Winkelorientierung. Es handelt sich in diesem Fall um eine inkommensurable Struktur bezüglich des HBC-Gitters, die jedoch bezüglich des zugrundeliegenden Graphitgitters point-on-line Koinzidenz zeigt. Das Versagen der einfachen geometrischen Epitaxiemodelle kann in diesem Fall auf die Existenz mehrerer, energetisch nahezu gleichwertiger Adsorptionsplätze innerhalb der Einheitszelle des Substrates zurückgeführt werden.