Transition metal oxides and chalcogenides are an ideal platform for demonstrating and investigating many interesting electronic phases of matter. These phases emerge as a result of collective many body interactions among the electrons. The omnipresent electron, depending on its interaction with other electrons and with the underlying lattice, can generate diverse phases of matter with exotic physical properties. The ultimate objective of Materials Science is to provide a complete microscopic understanding of these myriad electronic phases of matter. A proper understanding of the collective quant-tum behaviour of electrons in different system can also help in designing and tuning new electronic phases of matter that may have strong impact in the field of microelectronics, well beyond that predicted by Moore s law. Strong electron correlation effects produce a wide spectrum of ground state prop-retires like superconductivity, Metal Insulator Transition (MIT), charge-orbital ordering and many more. Similarly, different spin interactions among electrons, essentially due to various kinds of exchange coupling, give rise to varying magnetic ground state prop-retires like ferromagnetism, anti-ferromagnetism, spin glass, among others. The main objective of this thesis is to understand and rationalize diverse electronic and magnetic phases of matter in some selected strongly correlated systems. In chapter 1 we have provided an overview of various electronic and magnetic phases of matter which are relevant and necessary for understanding the chapters that follow. The first part of this chapter describes the fundamental concepts of the so called Metal Insulator Transition (MIT). A small section is dedicated to the subtle interactions among electrons and lattice that actually drive a system from a highly conducting metallic state to a strongly resistive insulating state. The second part of this chapter offers a compilation of different magnetic ground states which are discussed in detail in the last two chapters. In Chapter 2, we have explained various methodologies and experimental tech-antiques that have been used in the work reported in this thesis. In Chapter 3, we have provided a detailed understanding of the MIT in different polymorphic forms of Vanadium dioxide (VO2). Although VO2 exhibits a number of polymorphic forms, only the rutile/monoclinic VO2 phase has been studied extensively compared to other polymorphic forms. This phase shows a well-established MIT across ∼340 K, which has been extensively investigated in order to understand the relative importance of many body electron correlation effects arising primarily from on-site Coulomb interactions within the Vanadium 3d manifold, and single electron effects flounced by the dimerization of Vanadium atoms. Unlike the rutile phase of VO2, little is known about the MIT appearing across 212 K in the metastable B-phase of VO2. This phase shows dimerization of only half of the Vanadium atoms in the insulating state, in contrast to rutile/monoclinic VO2, which show complete dimerization. There is a long standing debate about the origin of the MIT in the rutile/monoclinic phase, that contrasts the role of the many-body Hubbard U term, with single particle effects of the dimerization. In light of this debate, the MIT in the B-phase offers a unique opportunity to understand and address the competition between many body and single particle effects, that has been unresolved over several decades. In this chapter we have investigated different polymorphs of VO2 to understand the underlying electronic structure and the nature of the MIT in these polymorphic forms. The MIT in VO2 B phase is very broad in nature. X-ray photoemission and optical conductivity data indicate that in case of VO2 B phase both correlation effects and dimerization is necessary to drive the MIT. We have also established that the correlation effects are more prominent for VO2 B phase compared to rutile/monoclinic phase. In Chapter 4, we have discussed the electronic structure of LaTiO3 (LTO)-SrTiO3 (STO) system. At the interface between polar LTO and non-polar (STO) oxides, an unique two dimensional electron gas (2DEG) like state appears, that exhibits a phenomenal range of unexpected transport, magnetic, and electronic properties. Thus, this interface stands as a prospective candidate for not only fundamental scientific investigation, but also application in technological and ultimately commercial frontiers. In this chapter, using variable energy Hard X-ray photoemission spectroscopy (HAXPES), we have experimentally investigated the layer resolved evolution of electronic structure across the interface in LTO-STO system. HAXPES results suggest that the interface is more coherent in nature and the coherent to incoherent feature ratio changes significantly as we probe deeper into the layer In chapter 5, we have investigated the electronic structure of the chemically exfoliated trigonal phase of MoS2. This elusive trigonal phase exists only as small patches on chemically exfoliated MoS2, and is believed to control functioning of MoS2 based devices. Its electronic structure is little understood, with total absence of any spec-troscopic data, and contradictory claims from theoretical investigations. We have ad-dressed this issue experimentally by studying the electronic structure of few layered chemically exfoliated MoS2 systems using spatially resolved X-ray photoemission spec-otoscopy and micro Raman spectroscopy in conjunction with electronic structure calculations. We have established that the ground state of this unique trigonal phase is actually a small gap (∼90 meV) semiconductor. This is in contrast with most of the claims in existing literature. In chapter 6, we have re-examined and revaluated the electronic structure of the late 3d transition metal monoxides (NiO, FeO, and CoO) using a combination of HAX-PES and state-of-the-art theoretical calculations. We have observed a strong evolution in the valence band spectra as a function of excitation energy. Theoretical results show that a combined GW+LDA+DMFT scheme is essential for explaining the observed experimental findings. Additionally, variable temperature HAXPES measurement In chapter 8, we have differentiated the surface and the bulk electronic structure in Sr2FeMoO6 and also have provided a new route to increase the Curie temperature of this material. Sr2FeMoO6 is well known for its high Curie temperature (Tc ∼410 K), half-metallic ferromagnetism, and a spectacularly large tunnelling magnetoresistance. The surface electronic structure of Sr2FeMoO6 is believed to be different from the bulk; leading to a Spin-Valve type Magnetoresistance. We have carried out variable energy HAXPES on Sr2FeMoO6 to probe electronic structure as a function of surface depth. Our experimental results indicate that surface is more Mo6+ rich. We have also demonstrated what we believe is the first direct experimental evidence of hard ferro-magnetism in the surface layer using X Ray Magnetic Circular Dichroism (XMCD) with dual detection mode. In the second part of this chapter we have designed a new route to increase the Curie temperature and have been successfully able to achieve a Curie temperature as high as 515 K.

In this thesis, quantum cluster methods are used to calculate electronic properties of correlated-electron systems. A special focus lies in the determination of the ground state properties of a 3/4 filled triangular lattice within the one-band Hubbard model. At this filling, the electronic density of states exhibits a so-called van Hove singularity and the Fermi surface becomes perfectly nested, causing an instability towards a variety of spin-density-wave (SDW) and superconducting states. While chiral d+id-wave superconductivity has been proposed as the ground state in the weak coupling limit, the situation towards strong interactions is unclear. Additionally, quantum cluster methods are used here to investigate the interplay of Coulomb interactions and symmetry-breaking mechanisms within the nematic phase of iron-pnictide superconductors. The transition from a tetragonal to an orthorhombic phase is accompanied by a significant change in electronic properties, while long-range magnetic order is not established yet. The driving force of this transition may not only be phonons but also magnetic or orbital fluctuations. The signatures of these scenarios are studied with quantum cluster methods to identify the most important effects. Here, cluster perturbation theory (CPT) and its variational extention, the variational cluster approach (VCA) are used to treat the respective systems on a level beyond mean-field theory. Short-range correlations are incorporated numerically exactly by exact diagonalization (ED). In the VCA, long-range interactions are included by variational optimization of a fictitious symmetry-breaking field based on a self-energy functional approach. Due to limitations of ED, cluster sizes are limited to a small number of degrees of freedom. For the 3/4 filled triangular lattice, the VCA is performed for different cluster symmetries. A strong symmetry dependence and finite-size effects make a comparison of the results from different clusters difficult. The ground state in the weak-coupling limit is superconducting with chiral d+id-wave symmetry, in accordance to previous renormalization group approaches. In the regime of strong interactions SDW states are preferred over superconductivity and a collinaer SDW state with nonuniform spin moments on a quadrupled unit cell has the lowest grand potential. At strong coupling, inclusion of short-range quantum fluctuations turns out to favor this collinear state over the chiral phase predicted by mean-field theory. At intermediate interactions, no robust conclusion can be drawn from the results. Symmetry-breaking mechanisms within the nematic phase of the iron-pnictides are studied using a three-band model for the iron planes on a 4-site cluster. CPT allows a local breaking of the symmetry within the cluster without imposing long-range magnetic order. This is a crucial step beyond mean-field approaches to the magnetically ordered state, where such a nematic phase cannot easily be investigated. Three mechanisms are included to break the fourfold lattice symmetry down to a twofold symmetry. The effects of anisotropic magnetic couplings are compared to an orbital ordering field and anisotropic hoppings. All three mechanisms lead to similar features in the spectral density. Since the anisotropy of the hopping parameters has to be very large to obtain similar results as observed in ARPES, a phonon-driven transition is unlikely.

The generation and propagation of pulses of nonequilibrium acoustic phonons and their interaction with semiconductor nanostructures are investigated. Such studies can give unique information about the properties of low-dimensional electron systems, but in order to interpret the experiments and to understand the underlying physics, a comparison with theoretical models is absolutely necessary. A central point of this work is therefore a universal theoretical approach allowing the simulation and the analysis of phonon spectroscopy measurements on low-dimensional semiconductor structures. The model takes into account the characteristic properties of the considered systems. These properties are the elastic anisotropy of the substrate material leading to focusing effects and highly anisotropic phonon propagation, the anisotropic nature of the different electron-phonon coupling mechanisms, which depend manifestly on phonon wavevector direction and polarization vector, and the sensitivity to the confinement parameters of the low-dimensional electron systems. We show that screening of the electron-phonon interaction can have a much stronger influence on the results of angle-resolved phonon spectroscopy than expected from transport measurements. Since we compare theoretical simulations with real experiments, the geometrical arrangement and the spatial extension of phonon source and detector are also included in the approach enabling a quantitative analysis of the data this way. To illustrate the influence of acoustic anisotropy and carrier confinement on the results of phonon spectroscopy in detail we analyse two different applications. In the first case the low-dimensional electron system acts as the phonon detector and the phonon induced drag current is measured. Our theoretical model enables us to calculate the electric current induced in low-dimensional electron systems by pulses of (ballistic) nonequilibrium phonons. The theoretical drag patterns reproduce the main features of the experimental images very well. The sensitivity of the results to variations of the confining potential of quasi-2D and quasi-1D electrons is demonstrated. This provides the opportunity to use phonon-drag imaging as unique experimental tool for determining the confinement lengths of low-dimensional electron systems. By comparing the experimental and theoretical images it is also possible to estimate the relative strength of the different electron-phonon coupling mechanisms.In the second application the low-dimensional electron system acts as the phonon pulse source and the angle and mode dependence of the acoustic phonon emission by hot 2D electrons is investigated. The results exhibit strong variations in the phonon signal as a function of the detector position and depend markedly on the coupling mechanism, the phonon polarization and the electron confinement width. We demonstrate that the ratio of the strengths of the emitted longitudinal (LA) and transverse (TA) acoustic phonon modes is predicted correctly only by a theoretical model that properly includes the effects of acoustic anisotropy on the electron-phonon matrix elements, the screening, and the form of the confining potential. A simple adoption of widely used theoretical assumptions, like the isotropic approximation for the phonons in the electron-phonon matrix elements or the use of simple variational envelope wavefunctions for the carrier confinement, can corrupt or even falsify theoretical predictions.We explain the `mystery of the missing longitudinal mode' in heat-pulse experiments with hot 2D electrons in GaAs/AlGaAs heterojunctions. We demonstrate that screening prevents a strong peak in the phonon emission of deformation potential coupled LA phonons in a direction nearly normal to the 2D electron system and that deformation potential coupled TA phonons give a significant contribution to the phonon signal in certain emission directions. / Die vorliegende Arbeit beschäftigt sich mit der Ausbreitung von akustischen Nichtgleichgewichtsphononen und deren Wechselwirkung mit Halbleiter-Nanostrukturen. Güte und Effizienz moderner Halbleiter-Bauelemente hängen wesentlich vom Verständnis der Wechselwirkung akustischer Phononen mit niederdimensionalen Elektronensystemen ab. Traditionelle Untersuchungsmethoden, wie die Messung der elektrischen Leitfähigkeit oder der Thermospannung, erlauben nur eingeschränkte Aussagen. Sie mitteln über die beteiligten Phononenmoden und eine Trennung der einzelnen Wechselwirkungsmechanismen ist nur näherungsweise möglich ist. Demgegenüber erlaubt die in der Arbeit diskutierte Methode der winkel- und zeitaufgelösten Phononen-Spektroskopie ein direktes Studium des Beitrags einzelner Phononenmoden, d.h. in Abhängigkeit von Wellenzahlvektor und Polarisation der Phononen. Im Mittelpunkt der Arbeit steht die Fragestellung, wie akustische Anisotropie und Ladungsträger-Confinement die Ergebnisse der winkel- und zeitaufgelösten Phononen-Spektroskopie beeinflussen und prägen. Dazu wird ein umfassendes theoretisches Modell zur Simulation von Phononen-Spektroskopie-Experimenten an niederdimensionalen Halbleitersystemen vorgestellt. Dieses erlaubt sowohl ein qualitatives Verständnis der ablaufenden physikalischen Prozesse als auch eine quantitative Analyse der Messergebnisse. Die Vorteile gegenüber anderen Modellen und Rechnungen liegen dabei in dem konsequenten Einbeziehen der akustischen Anisotropie, nicht nur für die Ausbreitung der Phononen, sondern auch für die Matrixelemente der Wechselwirkung, sowie eine saubere Behandlung des Confinements der Elektronen in den niederdimensionalen Systemen. Dabei werden die Grenzen weit verbreiteter Näherungsansätze für die Elektron-Phonon-Matrixelemente und das Elektronen-Confinement deutlich aufgezeigt. Für den quantitativen Vergleich mit realen Experimenten werden aber auch solche Größen, wie die endliche räumliche Ausdehnung von Phononenquelle und Detektor, die Streuung der Phononen an Verunreinigungen oder die Abschirmung der Elektron-Phonon-Kopplung durch die Elektron-Elektron-Wechselwirkung berücksichtigt.Im zweiten Teil der Arbeit wird der theoretische Apparat auf typische experimentelle Fragestellungen angewandt. Im Falle der Phonon-Drag-Experimente an GaAs/AlGaAs Heterostrukturen wird der durch akustische Nichtgleichgewichtsphononen in zwei- und eindimensionalen Elektronensystemen induzierte elektrische Strom (Phonon-Drag-Strom) als Funktion des Ortes der Phononenquelle bestimmt. Das in der Arbeit hergeleitete theoretische Modell kann die experimentellen Resultate für die Winkelabhängigkeit des Drag-Stromes sowohl für Messungen mit und ohne Magnetfeld qualitativ gut beschreiben. Außerdem wird der Einfluss unterschiedlicher Confinementmodelle und unterschiedlicher Wechselwirkungsmechanismen studiert. Dadurch ist es möglich, aus Phonon-Drag-Messungen Rückschlüsse auf die elektronischen und strukturellen Eigenschaften der niederdimensionalen Elektronensysteme zu ziehen (Fermivektor, effektive Masse, Elektron-Phonon-Kopplungskonstanten, Form des Confinementpotentials). Als weiteres Anwendungsbeispiel wird das Problem der Energierelaxation (aufgeheizter)zweidimensionaler Elektronensysteme in GaAs Heterostrukturen und Quantentrögen untersucht. Für Elektronentemperaturen unterhalb 50 K werden die Gesamtemissionsrate als Funktion der Temperatur und die winkelaufgelöste Emissionsrate (als Funktion der Detektorposition) berechnet. Für beide Größen wird erstmals eine gute Übereinstimmung zwischen Theorie und Experiment gefunden. Es zeigt sich, dass akustische Anisotropie und Abschirmungseffekte zu überraschenden neuen Ergebnissen führen können. Ein Beispiel dafür ist der unerwartet große Beitrag der mittels Deformationspotential-Wechselwirkung emittierten transversalen akustischen Phononen, der bei einer Emission der Phononen näherungsweise senkrecht zum zweidimensionalen System beobachtet werden kann.

Im Rahmen dieser Arbeit wurden die Kondo-Gitter YbT2Si2 (T = Rh, Ir, Co) und CeTPO (T = Ru, Os, Fe, Co) untersucht. In diesen Systemen treten starke ferromagnetische Korrelationen der 4f-Momente zusammen mit ausgeprägter Kondo-Wechselwirkung auf, deren theoretische Beschreibung bislang sehr kontrovers diskutiert wird. Diese Arbeit liefert damit einen essentiellen experimentellen Beitrag zur Physik von ferromagnetischen Kondo-Gittern. So konnten qualitativ hochwertige Einkristalle von YbRh2Si2 hergestellt und erstmalig an einem Schwere-Fermion-System deren kritische Fluktuationen um den magnetischen Phasenübergang analysiert werden. Weiterhin konnte das bis dahin unverstandene Auftreten einer Elektron-Spin-Resonanz (ESR)-Linie in YbT2Si2 auf ferromagnetische Korrelationen zurückgeführt werden. Außerdem wurde mit CeFePO ein neues Schwere-Fermion-System mit starken ferromagnetischen Korrelationen entdeckt sowie mit dem isoelektronischen CeRuPO der seltene Fall eines ferromagnetisch geordneten Kondo-Gitters realisiert. / Within the context of this thesis the Kondo lattices YbT2Si2 (T = Rh, Ir, Co) and CeTPO (T = Ru, Os, Fe, Co) were investigated. In these systems strong ferromagnetic correlations of the 4f-moments together with pronounced Kondo interactions are present, whose theoretical description are pres-ently controversial discussed. Therefore, this work gives an essential experimental contribution to the physics of ferromagnetic Kondo lattices. The main results include the growth of high-quality single crystals of YbRh2Si2 and the first analysis of the critical fluctuations around the magnetic phase transition in a heavy fermion system. Furthermore, the unexpected observation of an electron spin resonance in YbT2Si2 could be ascribed to ferromagnetic correlations. Moreover, a new heavy fermion system CeFePO with strong ferromagnetic correlations was found and with the isoelec-tronic CeRuPO the rare case of a ferromagnetic Kondo-lattice discovered.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.