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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Electronic Structure of Selected Materials by Means of the QSGW Method within the LAPW+LO Framework

Salas-Illanes, Nora 20 March 2019 (has links)
Materialien formen die moderne Welt: Sie umgeben uns in unserem alltäglichen Leben. Unser Ziel ist die Materialeigenschaften nach unseren Bedürfnissen maßzuschneidern. Viele Materialeigenschaften wie Bandücken und Elektronendichteverteilung werden durch elektronische Zustände bestimmt. Die meisten Vorhersagen in Bezug auf Materialien entstammen der Dichtefunktionaltheorie (DFT). Diese Theorie ermittelt Grundzustandseigenschaften und kann jedoch keine Energien von angeregten Zuständen liefern. Um angeregte Zusände zu beschreiben, bedarf es daher einer höherstufigen Theorie: die Vielteilchen-Störungstheorie (MBPT) . Im Rahmen von MBPT ist das üblichste Verfahren die GW-Näherung (GWA), worin Elektronen als Quasiteilchen (QP) beschrieben werden. Der Energieunterschied zwischen einem nicht-wechselwirkenden Teilchen und einem QP ist die Selbstenergie. In GWA ergibt sich die Selbsenergie als Produkt aus die Einteilchen-Greenfunktion, G, und die abgeschirmte Coulomb-Wechselwirkung, W, und führt zu der wahren Anregungsenergie von QP. Diese Doktorarbeit beinhaltet die Implementierung von selbstkonsistentem Quasiteilchen-GW (QSGW) im exciting Code. Dieses Software-Paket benutzt die Linearized-Augmented-Plane-Wave-Methode (LAPW), welche alle Elektronen gleichberechtigt behandelt. Beginnend mit DFT optimiert die QSGW-Methode den Einteilchen-Hamiltonoperator durch eine selbstkonsistente Suche eines optimierten Austausch-Korrelationspotentials. Am Ende des iterativen Prozesses liefert die QSGW-Methode Eigenfunktionen und Eigenwerte der QP. Wir präsentieren mit QSGW ermittelte elektronische Strukturen von neun kristallinen Festkörpern. Wir präsentieren die zugehörigen Bandstrukturen und Zustandsdichtediagramme und vergleichen anhand dieser die QSGW-Ergebnisse mit Ergebnissen von DFT und G0W0. Zusätzlich untersuchen wir die elektronische Ladungsdichte und Wellenfunktion in ausgewählten Materialien. / Materials shape the modern world: they appear everywhere in our daily life. We investigate what governs the material's properties, in order to tailor them to meet our needs. Properties, e.g., bandgaps, and electronic density distribution are determined by the electronic structure. Most predictions on materials follow from computational physics, in particular density-functional theory (DFT). This scheme returns ground-state properties, but it fails to provide excited-state energies. To find the latter, we have to recourse to a higher degree of theory, namely many-body perturbation theory (MBPT). Within MBPT, the most popular framework is the GW approximation (GWA) which describes electrons as quasiparticles (QP). The difference in energy between a non-interacting particle and a QP is called the self-energy. In GWA, the product of the Green function G and W, the screened Coulomb interaction, returns the self-energy. GWA is in principle self-consistent, but is mostly implemented as a perturbative correction to DFT results, known as G0W0. Unfortunately, the electronic structure given by G0W0 depends on the initial DFT results. This PhD project consists in the implementation of the self-consistent quasiparticle GW (QSGW) in the exciting code. This software package uses the all-electron linearized augmented planewave (LAPW) method, treating every electron on equal footing. Starting from DFT, the QSGW method (based in the GWA) optimizes the one-particle Hamiltonian through a self-consistent search for an optimized exchange-correlation potential. At the end of the iterative process, the QSGW method provides eigenfunctions and eigenvalues of the QPs. Considering nine crystalline solids, we present their electronic structure by means of QSGW. We present the bandstructures and density of state diagrams, comparing QSGW results to DFT and G0W0 results. In addition, we study the electronic charge density and wavefunction in selected materials.
2

Bi₁₂Rh₃Cu₂I₅: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channels

Carrillo-Aravena, Eduardo, Finzel, Kati, Ray, Rajyavardhan, Richter, Manuel, Heider, Tristan, Cojocariu, Iulia, Baranowski, Daniel, Feyer, Vitaliy, Plucinski, Lukasz, Gruschwitz, Markus, Tegenkamp, Christoph, Ruck, Michael 11 June 2024 (has links)
Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation-free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi14Rh3I9, the first weak 3D TI, topology presumably arises from stacking of the intermetallic [(Bi4Rh)3I]2þ layers, which are predicted to be 2D TIs and to possess protected edge-states, separated by topologically trivial [Bi2I8]2+ octahedra chains. In the new layered salt Bi12Rh3Cu2I5, the same intermetallic layers are separated by planar, i.e., only one atom thick, [Cu2I4]2- anions. Density functional theory (DFT)-based calculations show that the compound is a weak 3D TI, characterized by Z2 ¼ ð0; 0001Þ, and that the topological gap is generated by strong spin–orbit coupling (Eg,calc.~ 10 meV). According to a bonding analysis, the copper cations prevent strong coupling between the TI layers. The calculated surface spectral function for a finite-slab geometry shows distinct characteristics for the two terminations of the main crystal faces 〈001〉, viz., [(Bi4Rh)3I]2þ and [Cu2I4]2-. Photoelectron spectroscopy data confirm the calculated band structure. In situ four-point probe measurements indicate a highly anisotropic bulk semiconductor (Eg,exp.¼ 28 meV) with pathindependent metallic conductivity restricted to the surface as well as temperatureindependent conductivity below 60 K.

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