A major focus is on integrated Silicon-based optoelectronics for the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive and portable optical sensors in the environmental control and medicine follows in the development of integrated high resolution sensors [1]. In particular, since 2013 the quick onsite verification of pathogens, like legionella in drinking water pipes, is becoming increasingly important [2, 3]. The essential questions regarding the establishment of portable biochemical sensors are the incorporation of electronic and optical devices as well as the implementations of fundamental cross-innovations between biotechnology and microelectronics. This thesis describes the design, fabrication and analysis of high-refractive-index-contrast photonic structures. Besides silicon nitride (Si3N4) strip waveguides, lateral tapers, bended waveguides, two-dimensional photonic crystals (PhCs) the focus lies on monolithically integrated waveguide butt-coupled Silicon-based light emitting devices (Sibased LEDs) [4, 5] for use as bioanalytical sensor components. Firstly, the design and performance characteristics as single mode regime, confinement factor and propagation losses due to the geometry and operation wavelength (1550 nm, 541 nm) of single mode (SM), multi mode (MM) waveguides and bends are studied and simulated. As a result, SM operation is obtained for 1550 nm by limiting the waveguide cross-section to 0.5 μm x 1 μm resulting in modal confinement factors of 87 %. In contrast, for shorter wavelengths as 541 nm SM propagation is excluded if the core height is not further decreased. Moreover, the obtained theoretical propagation losses for the lowestorder TE/TM mode are in the range of 0.3 - 1.3 dB/cm for an interface roughness of 1 nm. The lower silicon dioxide (SiO2) waveguide cladding should be at least 1 μm to avoid substrate radiations. These results are in a good correlation to the known values for common dielectric structures. In the case of bended waveguides, an idealized device with a radius of 10 μm was developed which shows a reflection minimum (S11 = - 22 dB) at 1550 nm resulting in almost perfect transmission of the signal. Additionally, tapered waveguides were investigated for an optimized light coupling between high-aspect-ratio devices. Here, adiabatic down-tapered waveguides were designed for the elimination of higher-order modes and perfect signal transmission. Secondly, fabrication lines including Electron-beam (E-beam) lithography and reactive ion etching (RIE) with an Aluminum (Al) mask were developed and lead to well fabricated optical devices in the (sub)micrometer range. The usage of focused ion beam (FIB) milling is invented for smoother front faces which were analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). As a result, the anisotropy of the RIE process was increased, but the obtained surface roughness parameters are still too high (10 – 20 nm) demonstrating a more advanced lithography technique is needed for higher quality structures. Moreover, this study presents an alternative fabrication pathway for novel designed waveguides with free-edge overlapping endfaces for improving fiber-chipcoupling. Thirdly, the main focus lies on the development of a monolithic integration circuit consisting of the Si-based LED coupled to an integrated waveguide. The light propagation between high-aspect-ratio devices is enabled through low-loss adiabatic tapers. This study shows, that the usage of CMOS-related fabrication technologies result in a monolithic manufacturing pathway for the successful implementation of fully integrated Si-based photonic circuits. Fourth, transmission loss measurements of the fabricated photonic structures as well as the waveguide butt-coupled Si-based LEDs were performed with a generated setup. As a result, free-edge overlapping MM waveguides show propagation loss coefficients of ~ 65 dB/cm in the range of the telecommunication wavelength. The high surface roughness parameters (~ 150 nm) and the modal dispersion in the core are one of the key driving factors. These facts clearly underline the improvement potential of the used fabrication processes. However, electroluminescence (EL) measurements of waveguide butt-coupled Si-based LEDs due to the implanted rare earth (RE) ion (Tb3+, Er3+) and the host material (SiO2/SiNx) were carried out. The detected transmission spectra of the coupled Tb:SiO2 systems show a weak EL signal at the main transition line of the Tb3+-ion (538 nm). A second emission line was detected in the red region of the spectrum either corresponding to a further optical transition of Tb3+ or a Non Bridging Oxygen Hole Center (NBOHC) in SiO2. Unfortunately, no light emission in the infrared range was established for the Er3+-doped photonic circuits caused by the low external quantum efficiencies (EQE) of the Er3+ implanted Si-based LEDs. Nevertheless, transmission measurements between 450 nm – 800 nm lead again to the result that an emission at 650 nm is either caused by an optical transition of the Er3+-ion or initialized by the NBOHC in the host. Overall, it is difficult to assess whether or not these EL signals are generated from the implanted ions, thus detailed statements about the coupling efficiency between the LED and the integrated waveguide are quite inadequate. Nevertheless, the principle of a fully monolithically integrated photonic circuit consisting of a Si-based LED and a waveguide has been successfully proven in this study.

Ce travail de thèse concerne les circuits ultra-rapides pour la conversion analogique numérique performante en technologie bipolaire à hétérojonctions sur substrat Indium Phosphore (TBDH/InP). L'étude s'intéresse à la fonction principale qui est l'échantillonnage blocage. Elle a été menée par simulation de l'ensemble des blocs composant cette fonction. En particulier une étude extensive des cœurs des circuits Echantillonneurs/Bloqueurs a été effectuée pour différents paramètres électriques pour aboutir à des valeurs optimales réalisant un compromis entre la bande passante la résolution et la linéarité.Des architectures de circuits Echantillonneurs/Bloqueurs (E/B) avec ou sans l'étage d'amplification à gain variable ont été conçues, optimisées, réalisées et caractérisées et des performances à l'état de l'art ont été obtenues : des circuits E/B de bande passante supérieure à 50 GHz et cadencées à 70 Gs/s ont été réalisés pour les applications de communications optiques et des circuits de bande passante supérieure à 16 GHz cadencés à (2-8) Gs/s ont été réalisés pour la transposition de fréquence. / This thesis concerns the design of high speed circuits in Indium phosphide heterojunction Bipolar technology for High performance analog to digital conversion (ADC).The study focuses on the Track and Hold block (THA) which is the main function of the ADC. The study was conducted by simulating all blocks of the THA circuit. In particular, an extensive study of the THA main block was performed for various electrical parameters to achieve optimal conditions in order to obtain a good tradeoff between resolution bandwidth and linearity. THA architectures circuits with or without Voltage Gain Amplifier stage were designed, optimized and characterized. High THA performances were achieved: THA circuit with a bandwidth greater than 50 GHz at 70 Gs/s were achieved for optical communications and circuits of bandwidth more than16 GHz at (2-8 GS /s) have been realized for down conversion operation.

Cette thèse porte sur l’étude de la croissance auto-organisée de boîtes quantiques d’In(Ga)As sur substrat de silicium visant à l’intégration monolithique d’un émetteur de lumière sur silicium à base d’un matériau semiconducteur III-V. Le développement d’un tel système se heurte à deux verrous majeurs : le premier provient d’un très fort désaccord de maille qui rend difficile l’élaboration de boîtes quantiques d’In(Ga)As sur Si présentant de bonnes qualités structurales et optiques, et le second provient de la nature électronique de l’interface entre In(Ga)As et le Si dont il est prédit qu’elle est de type II et donc peu efficace pour l’émission de lumière. L’approche que nous avons proposée consiste à insérer des BQs d’In(Ga)As dans un puits quantique de silicium dans SiO2, fabriqué sur un substrat SOI. Les effets attendus de confinement quantique dans le puits de Si favoriseraient une interface In(Ga)As/Si de type I. D’un point de vue expérimental, nous avons donc étudié l’influence de différents paramètres de croissance (température de croissance, rapport V/III, quantité d’In(Ga)As déposé, teneur en indium des boîtes quantiques …) sur le mode de croissance et sur les propriétés structurales et optiques des BQs d’In(Ga)As épitaxiées sur substrat de Si(001). Nous avons proposé une interprétation des phénomènes microscopiques qui régissent la formation des boîtes quantiques d’In(Ga)As sur Si en fonction de la teneur en indium. Nous avons aussi montré qu’il est possible de fabriquer des boîtes quantiques d’In0,4Ga0,6As sur Si ne présentant pas de défauts structuraux liés à la relaxation plastique. La luminescence attendue des boîtes quantiques n’a pas pu être obtenue, probablement en raison de deux conditions requises mais antagonistes: la fabrication de boîtes quantiques de très haute qualité structurale (possible uniquement pour de l’In(Ga)As avec une teneur en In inférieure à 50%) et un alignement de bandes à l’interface BQs In(Ga)As/Si de type I (possible théoriquement pour une teneur en In supérieure ou égale à 70%). Ce travail a permis d’enrichir la connaissance et le savoir-faire concernant l’élaboration de boîtes quantiques d’In(Ga)As sur substrat de Si(001) et l’encapsulation de ces boîtes quantiques par du silicium dans un réacteur d’épitaxie par jets moléculaires III-V. / This thesis focuses on the study of the self-organized growth of In(Ga)As quantum dots (QDs) on a silicon substrate. The purpose of this work is to pave the way for a monolithic integration of III-V semiconductor-based light emitter on silicon. One of the big challenges of this project is to overcome the high lattice mismatch between InGaAs and Si which can induce structural defects in the QDs. Another key challenge comes from the expected type II In(Ga)As/Si interface that is detrimental for efficient light emission. In order to solve the “interface type” issue, we suggested to insert the In(Ga)As QD plane inside a thin silicon layer grown on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to raise the X-valley of the Si conduction band above the Γ-valley, leading to a type I interface in both direct and reciprocal space. The influence of different parameters (such as the amount of deposited In(Ga)As, the growth temperature, the V/III ratio and the gallium content...) on the growth mode and on the structural and optical properties of the In(Ga)As QDs grown on Si(001) are experimentally studied. We propose an interpretation of the microscopic phenomena governing the formation of the QDs as a function of gallium content. We finally show the possibility of making In0,4Ga0,6As QDs on Si(001) substrates, these QDs being free of ‘plastic relaxation’-related structural defects. The expected luminescence from the QDs was not obtained probably due to two incompatible conditions: the first, required for growing high structural quality QDs (possible only for In(Ga)As containing less than 50% of In) and the second, essential for maintaining a type I interface band alignment (theoretically possible for an In content greater than 50%). This work is contributing to the understanding of In(Ga)As QDs growth on Si(001) substrates and to the know-how of capping such QDs with silicon inside a III-V molecular beam epitaxy reactor.

Abstract The objective of this thesis is to demonstrate multi-dimensional carbon nanotube (CNT) structures in combination with various active materials in order to evaluate their performance in electrode applications such as cold emitters, electric double-layer capacitors (EDLC), and electrochemical sensor/catalyst devices. As the host materials for other active materials, the construction of multi-dimensional CNT nanostructures in this thesis is achieved by two different approaches. In the first, direct growth of 3-dimensional carbon nanostructures by catalytic chemical deposition to produce filamentary carbon as well as vertically aligned forests was applied. The second route that was utilized encompassed the immobilization of CNTs from dispersions to form 2-dimensional surface coatings as well as self-supporting porous buckypapers. Carbonaceous nanocomposites of the active materials are obtained by a number of different methods such as (i) growing nanotubes and filamentous structures on porous Ni catalyst structures, (ii) impregnating CNTs with organic receptor molecules or with Pd nanoparticles, (iii) plating and replacing Cu with Pd on the nanotubes by chemical and galvanic reactions, (iv) annealing W evaporated on CNTs to form CNT-WC composites in solid-solid reactions and (v) reacting S vapor with W coated on CNTs to synthesize CNT-WS2 edge-on lamellar structures of the dichalcogenide in the vertically aligned CNT forests. The 3-dimensional carbon-Raney®Ni composite electrodes show reasonable specific capacitance of ~12 F·g-1 in electric double-layer capacitors as well as a low turn-on field (<1.0 V·µm-1) in field emitter devices. CNT-Nafion®-trifluoroacetylazobenzene coatings on glassy carbon electrodes outperform their Nafion®-trifluoroacetylazobenzene counterparts in electrochemical sensing of different amine compounds (e.g. 10 mM cadaverine, putrescine or ammonia). Cu and CuPd/buckypaper composites display catalytic activity in electrocatalytic oxidation of methanol in alkaline media. On the other hand, nanocomposites of WC and WS2 with aligned CNT forest exhibit a promising performance in hydrogen evolution reactions with an overpotential between -0.5 and -0.7 V at pH~1. In addition, these respective CNT forest aligned nanocomposites also demonstrate a novel method to obtain macroscopic 3-dimensional catalytic electrode assemblies. The results in this thesis elucidate the combination of carbon based nanostructures with organic and inorganic materials as a feasible and versatile approach to produce electrodes for several applications. The following studies of each active carbonaceous composite are expected to boost the technological innovation in relevant fields and initiate further development for commercial exploitation. / Tiivistelmä Työn tavoitteena oli demonstroida moniulotteisia hiilinanoputkirakenteita (CNT), joihin yhdistetään erilaisia aktiivisia materiaaleja sekä arvioida niiden suorituskykyä elektrodisovelluksissa, kuten kenttäemitterissä, sähköisissä kaksoiskerroskondensaattoreissa ja sähkökemiallisissa anturi- ja katalyyttikomponenteissa. Moniulotteisten CNT-nanorakenteiden konstruoiminen muiden aktiivisten materiaalien isäntämateriaaliksi toteutettiin kahdella tavalla. Ensimmäisessä toteutuksessa sovellettiin katalyyttis-kemiallista pinnoitusta, jolla kasvatettiin suoraan kolmiulotteisia hiilinanorakenteita sekä kuitumaisena hiilenä että pystysuuntaan orientoituneina hiilinanoputkimetsinä. Toinen päämenetelmä oli hiilinanoputkien immobilisointi dispersioista kaksiulotteisiksi pinnoitteiksi ja itsetukeutuviksi huokoisiksi hiilinanoputkipapereiksi. Hiiltä sisältäviä aktiivisten materiaalien nanokomposiitteja valmistettiin useilla menetelmillä, kuten (i) kasvattamalla nanoputkia ja kuitumaisia rakenteita huokoisiin Ni-katalyyttirakenteisiin, (ii) kyllästämällä hiilinanoputkia orgaanisilla reseptorimolekyyleillä tai Pd-nanopartikkeleilla, (iii) pinnoittamalla ja korvaamalla nanoputkien päällä olevaa kuparia palladiumilla kemiallisten ja galvaanisten reaktioiden avulla, (iv) hehkuttamalla hiilinanoputkien pinnalle höyrystettyä wolframia (W) muodostamaan CNT-WC-komposiitteja kiinteä–kiinteä-reaktiolla sekä (v) antamalla rikkihöyryn reagoida W-pinnoitettujen hiilinanoputkien kanssa lamellaaristen CNT-WS2-kalkogenidirakenteiden syntetisoimiseksi pystysuuntaan orientoituneisiin CNT-metsiin. Kolmiulotteisilla hiili–Raney®Ni-komposiittielektrodeilla saavutetaan kohtuullinen ominaiskapasitanssi (~12 F·g-1) sähköisissä kaksoiskerroskondensaattoreissa ja pieni kytkeytymiskenttä (<1,0 V·μm-1) kenttäemitterikomponenteissa. CNT-Nafion®-trifluoroasetyyliatsobentseeni-pinnoitteet lasimaisilla hiilielektrodeilla ovat selvästi parempia erilaisten amiiniyhdisteiden (esimerkiksi 10 mM kadaveriini, putreskiini tai ammoniakki) sähkökemiallisessa havaitsemisessa kuin vastaavat Nafion®-trifluoroasetyyliatsobentseeni-pinnoitteet. Cu- ja CuPd-hiilinanoputkipaperikomposiitit osoittavat katalyyttistä aktiivisuutta metanolin sähkökatalyyttisessä hapettumisessa emäksisessä väliaineessa. Toisaalta WC- ja WS2-yhdisteiden ja orientoituneiden CNT-metsien muodostamat nanokomposiitit osoittavat lupaavaa suorituskykyä vedynmuodostamisreaktiossa -0,5…-0,7 V ylipotentiaalilla, ja nämä myös demonstroivat uutta menetelmää makroskooppisten kolmiulotteisten katalyyttisten elektrodirakenteiden toteuttamiseksi. Väitöskirjan tulokset osoittavat, että hiilipohjaisten nanorakenteiden ja orgaanisten/epäorgaanisten materiaalien yhdistäminen on toteuttamiskelpoinen ja monipuolinen lähestymistapa elektrodien valmistamiseksi useisiin sovelluksiin. Kunkin työssä esitetyn aktiivista hiiltä sisältävän komposiitin tutkimuksen odotetaan lisäävän kyseisen alan teknisiä innovaatioita ja synnyttävän lisää kehitystyötä tutkimuksen kaupalliseksi soveltamiseksi.

Im Mittelpunkt der vorliegenden Dissertation stand die Herstellung von organischen Leuchtdioden und Passiv-Matrix-Displays an einer neuartigen Durchlauf-Depositionsanlage. Die Abscheidung von "small molecule" Materialien im Hochvakuum wurde dabei mittels organischer Molekularstrahldeposition (OMBD) durchgeführt. Um effiziente Leuchtdioden zu erzielen, sind die Bauelemente als Mehrschichtsystem aufgebracht worden. Als Grundstruktur kam eine Schichtenfolge zur Anwendung, die als Löchertransporter aus dem Starburst-Derivat 2-TNATA, daran anschließend einem tertiären Arylamin, dem elektronenblockierenden a-NPB sowie dem Oxinat-Komplex Alq3 besteht. Dabei diente das Aluminium-Oxinat als Elektronenleiter und Emissionsmaterial. Mit dem Quinacridon-Derivat QAD als Dotierstoff wurde außerdem eine OLED-Struktur mit Gast-Wirtsystem realisiert Eine kontrollierte und reproduzierbare Deposition der organischen Materialien ist eine unabdingbare Voraussetzung, um organische Leuchtdioden kommerziell als Mehrschichtbauelemente herstellen zu können. Dazu wurde ein Hochvakuumsystem der Firma Applied Films installiert und in Betrieb genommen. Die VES 400/13-Entwicklungsanlage ist als Vertical Evaporation and Sputtering Durchlaufsystem für bis zu 400 mm hohe Substrate mit 11 individuellen Prozesskammern sowie zwei daran anschließenden Stickstoffboxen konzipiert. Diese Technologie ermöglicht das Aufdampfen einer oder nacheinander mehrerer Schichten auf beliebiges Substratmaterial. Entsprechend den Erfordernissen sind wichtige Prozessparameter wie Depositionsrate, Transportgeschwindigkeit des Substrates sowie Filmdicke der funktionellen Schichten in einem weiten Bereich frei einstellbar. Neben einer ausgeglichenen Löcher- und Elektroneninjektion werden die Eigenschaften der hergestellten Leuchtdioden durch die Dicken der einzelnen Schichten, der Beweglichkeit der Ladungsträger in den verwendeten organischen Materialien sowie der energetischen Lage der höchsten besetzten und niedrigsten unbesetzten Molekülorbitale der Halbleiter bestimmt. Als undotierte OLED-Struktur wurde eine Schichtenfolge aus ITO / 2-TNATA / NPB / Alq3 / Mg verwendet. Die Stärke der elektrischen Kontakte betrug jeweils etwa 150 nm für ITO bzw. Magnesium. Die organischen Halbleiterfilme verfügten über Lagendicken von 60 / 10 / 60 nm. Eine derart aufgebaute Leuchtdiode zeigte ein grünes Emissionsspektrum, dessen Mittenwellenlänge bei etwa 537 nm lag und eine Halbwertsbreite von circa 112 nm aufwies. Für die Betriebsspannung, die Leuchtdichte, die Strom- sowie die Leistungseffizienz ergaben sich für die beiden Stromdichten von 3 mA/cm² und 30 mA/cm² optimierte Werte zu 5,3 V bzw. 9,4 V, 100 cd/m² bzw. 1317 cd/m², 3,3 cd/A bzw. 4,4 cd/A sowie 2 lm/W bzw. 1,5 lm/W. Das Sperr- oder Gleichrichtungsverhältnis Gv wurde für die beiden gemessenen Maximal-spannungen von ±10 Volt zu <5 x 107 bestimmt. Durch die Dotierung der Alq3-Emissionsschicht mit etwa 1 mol% des Quinacridon-Derivats QAD und Hinzufügen einer separaten Elektronentransportschicht konnte eine Steigerung der Elektrolumines-zenz erreicht werden. Der OLED-Aufbau des Gast-Wirt-Systems verfügt über einen Schichtenstapel mit den Lagen ITO / 2-TNATA / NPB / Alq3 + QAD / Alq3 / Mg. Die Filmdicken der organischen Schichten der OLED mit den besten Eigenschaften betragen 60 / 10 / 35 / 25 nm. Die anorganischen elektrischen Kontakte waren jeweils etwa 150 nm dick. Die dotierten Bauelemente zeigen ein bei einer Mittenwellenlänge von 527 nm emittierendes, grünes Spektrum. Mit einer geringen Halbwertsbreite von 28 nm ist die Bedingung einer schmalen Emissionsbreite für die Anwendung in OLED-Displays erfüllt. Die Betriebsspannung, die Leuchtdichte, die Strom- und die Leistungseffizienz ergeben für die beiden Stromdichten von 6,2 mA/cm² und 45,6 mA/cm² optimierte Werte zu 10,8 V bzw. 17,0 V, 445,4 cd/m² bzw. 3816,7 cd/m², 7,2 cd/A bzw. 8,4 cd/A sowie 2,1 lm/W bzw. 1,6 lm/W.

This thesis deals with an autonomous single-channel deinterleaving. An autonomous single-channel deinterleaving is a separation of the received sequence of impulses from more than one emitter to sequences of impulses from one emitter without a human assistance. Methods used for deinterleaving could be divided into single-parameter and multiple-parameter methods according to the number of parameters used for separation. This thesis primarily deals with multi-parameter methods. As appropriate methods for an autonomous single-channel deinterleaving DBSCAN and variational bayes methods were chosen. Selected methods were adjusted for deinterleaving and implemented in programming language Python. Their efficiency is examined on simulated and real data.

The thesis deals with study of thin layers of transition metal dichalcogenides, especially of molybdenum disulfide. Nanostructures were fabricated on two-dimensional crystals of MoS2 and WSe2. Within followed analysis attention was paid to the photoluminescence properties. In the thesis transition metal dichalcogenides are reviewed and description of the modified process of preparation by micromechanical exfoliation is given.

En Guerre Electronique, l’identification des signaux radar est un atout majeur de la prise de décisions tactiques liées au théâtre d’opérations militaires. En fournissant des informations sur la présence de menaces, la classification et le partitionnement des signaux radar ont alors un rôle crucial assurant un choix adapté des contre-mesures dédiées à ces menaces et permettant la détection de signaux radar inconnus pour la mise à jour des bases de données. Les systèmes de Mesures de Soutien Electronique enregistrent la plupart du temps des mélanges de signaux radar provenant de différents émetteurs présents dans l’environnement électromagnétique. Le signal radar, décrit par un motif de modulations impulsionnelles, est alors souvent partiellement observé du fait de mesures manquantes et aberrantes. Le processus d’identification se fonde sur l’analyse statistique des paramètres mesurables du signal radar qui le caractérisent tant quantitativement que qualitativement. De nombreuses approches mêlant des techniques de fusion de données et d’apprentissage statistique ont été développées. Cependant, ces algorithmes ne peuvent pas gérer les données manquantes et des méthodes de substitution de données sont requises afin d’utiliser ces derniers. L’objectif principal de cette thèse est alors de définir un modèle de classification et partitionnement intégrant la gestion des valeurs aberrantes et manquantes présentes dans tout type de données. Une approche fondée sur les modèles de mélange de lois de probabilités est proposée dans cette thèse. Les modèles de mélange fournissent un formalisme mathématique flexible favorisant l’introduction de variables latentes permettant la gestion des données aberrantes et la modélisation des données manquantes dans les problèmes de classification et de partionnement. L’apprentissage du modèle ainsi que la classification et le partitionnement sont réalisés dans un cadre d’inférence bayésienne où une méthode d’approximation variationnelle est introduite afin d’estimer la loi jointe a posteriori des variables latentes et des paramètres. Des expériences sur diverses données montrent que la méthode proposée fournit de meilleurs résultats que les algorithmes standards. / In Electronic Warfare, radar signals identification is a supreme asset for decision making in military tactical situations. By providing information about the presence of threats, classification and clustering of radar signals have a significant role ensuring that countermeasures against enemies are well-chosen and enabling detection of unknown radar signals to update databases. Most of the time, Electronic Support Measures systems receive mixtures of signals from different radar emitters in the electromagnetic environment. Hence a radar signal, described by a pulse-to-pulse modulation pattern, is often partially observed due to missing measurements and measurement errors. The identification process relies on statistical analysis of basic measurable parameters of a radar signal which constitute both quantitative and qualitative data. Many general and practical approaches based on data fusion and machine learning have been developed and traditionally proceed to feature extraction, dimensionality reduction and classification or clustering. However, these algorithms cannot handle missing data and imputation methods are required to generate data to use them. Hence, the main objective of this work is to define a classification/clustering framework that handles both outliers and missing values for any types of data. Here, an approach based on mixture models is developed since mixture models provide a mathematically based, flexible and meaningful framework for the wide variety of classification and clustering requirements. The proposed approach focuses on the introduction of latent variables that give us the possibility to handle sensitivity of the model to outliers and to allow a less restrictive modelling of missing data. A Bayesian treatment is adopted for model learning, supervised classification and clustering and inference is processed through a variational Bayesian approximation since the joint posterior distribution of latent variables and parameters is untractable. Some numerical experiments on synthetic and real data show that the proposed method provides more accurate results than standard algorithms.

A major focus is on integrated Silicon-based optoelectronics for the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive and portable optical sensors in the environmental control and medicine follows in the development of integrated high resolution sensors [1]. In particular, since 2013 the quick onsite verification of pathogens, like legionella in drinking water pipes, is becoming increasingly important [2, 3]. The essential questions regarding the establishment of portable biochemical sensors are the incorporation of electronic and optical devices as well as the implementations of fundamental cross-innovations between biotechnology and microelectronics. This thesis describes the design, fabrication and analysis of high-refractive-index-contrast photonic structures. Besides silicon nitride (Si3N4) strip waveguides, lateral tapers, bended waveguides, two-dimensional photonic crystals (PhCs) the focus lies on monolithically integrated waveguide butt-coupled Silicon-based light emitting devices (Sibased LEDs) [4, 5] for use as bioanalytical sensor components. Firstly, the design and performance characteristics as single mode regime, confinement factor and propagation losses due to the geometry and operation wavelength (1550 nm, 541 nm) of single mode (SM), multi mode (MM) waveguides and bends are studied and simulated. As a result, SM operation is obtained for 1550 nm by limiting the waveguide cross-section to 0.5 μm x 1 μm resulting in modal confinement factors of 87 %. In contrast, for shorter wavelengths as 541 nm SM propagation is excluded if the core height is not further decreased. Moreover, the obtained theoretical propagation losses for the lowestorder TE/TM mode are in the range of 0.3 - 1.3 dB/cm for an interface roughness of 1 nm. The lower silicon dioxide (SiO2) waveguide cladding should be at least 1 μm to avoid substrate radiations. These results are in a good correlation to the known values for common dielectric structures. In the case of bended waveguides, an idealized device with a radius of 10 μm was developed which shows a reflection minimum (S11 = - 22 dB) at 1550 nm resulting in almost perfect transmission of the signal. Additionally, tapered waveguides were investigated for an optimized light coupling between high-aspect-ratio devices. Here, adiabatic down-tapered waveguides were designed for the elimination of higher-order modes and perfect signal transmission. Secondly, fabrication lines including Electron-beam (E-beam) lithography and reactive ion etching (RIE) with an Aluminum (Al) mask were developed and lead to well fabricated optical devices in the (sub)micrometer range. The usage of focused ion beam (FIB) milling is invented for smoother front faces which were analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). As a result, the anisotropy of the RIE process was increased, but the obtained surface roughness parameters are still too high (10 – 20 nm) demonstrating a more advanced lithography technique is needed for higher quality structures. Moreover, this study presents an alternative fabrication pathway for novel designed waveguides with free-edge overlapping endfaces for improving fiber-chipcoupling. Thirdly, the main focus lies on the development of a monolithic integration circuit consisting of the Si-based LED coupled to an integrated waveguide. The light propagation between high-aspect-ratio devices is enabled through low-loss adiabatic tapers. This study shows, that the usage of CMOS-related fabrication technologies result in a monolithic manufacturing pathway for the successful implementation of fully integrated Si-based photonic circuits. Fourth, transmission loss measurements of the fabricated photonic structures as well as the waveguide butt-coupled Si-based LEDs were performed with a generated setup. As a result, free-edge overlapping MM waveguides show propagation loss coefficients of ~ 65 dB/cm in the range of the telecommunication wavelength. The high surface roughness parameters (~ 150 nm) and the modal dispersion in the core are one of the key driving factors. These facts clearly underline the improvement potential of the used fabrication processes. However, electroluminescence (EL) measurements of waveguide butt-coupled Si-based LEDs due to the implanted rare earth (RE) ion (Tb3+, Er3+) and the host material (SiO2/SiNx) were carried out. The detected transmission spectra of the coupled Tb:SiO2 systems show a weak EL signal at the main transition line of the Tb3+-ion (538 nm). A second emission line was detected in the red region of the spectrum either corresponding to a further optical transition of Tb3+ or a Non Bridging Oxygen Hole Center (NBOHC) in SiO2. Unfortunately, no light emission in the infrared range was established for the Er3+-doped photonic circuits caused by the low external quantum efficiencies (EQE) of the Er3+ implanted Si-based LEDs. Nevertheless, transmission measurements between 450 nm – 800 nm lead again to the result that an emission at 650 nm is either caused by an optical transition of the Er3+-ion or initialized by the NBOHC in the host. Overall, it is difficult to assess whether or not these EL signals are generated from the implanted ions, thus detailed statements about the coupling efficiency between the LED and the integrated waveguide are quite inadequate. Nevertheless, the principle of a fully monolithically integrated photonic circuit consisting of a Si-based LED and a waveguide has been successfully proven in this study.

Since C^C* cyclometalated Pt(II) complexes with N-heterocyclic carbene (NHC) ligands have been identified as potential emitter materials in organic light-emitting devices (OLEDs), very promising results regarding quantum yields, colour and stability have been presented. Herein, we report on four nitrile substituted complexes with a chelating NHC ligand (1-(4-cyanophenyl)-3-isopropyl-1H-benzo[d]imidazole or 4-(tert-butyl)-1-(4-cyanophenyl)-3-methyl-1H-imidazole) and a bidentate monoanionic auxiliary ligand (acetylacetone or dimesitoylmethane). The complexes have been fully characterized including extensive 2D NMR studies (COSY, HSQC, HMBC, NOESY, 195Pt NMR), three of them also by solid-state structures. Photophysical measurements in amorphous PMMA films and pure emitter films at room temperature reveal the impact of the mesityl groups in the auxiliary ligand, which led to a significant increase of the quantum yield, while the decay lifetimes decreased. The electron withdrawing nitrile groups shift the emission towards blue colour coordinates.