491 |
Caractérisation des process de fabrication microélectroniques pour l'éco-conception des futures technologiesBaudry, Ingwild 14 October 2013 (has links) (PDF)
L'industrie microélectronique est engagée depuis longtemps dans des mesures visant à réduire ses impacts sur l'environnement, et ce sur toutes les phases du cycle de vie de ses produits. Sur les sites de fabrication, la suite logique à la mise en place de système de traitement des pollutions est l'anticipation de ces dernières. L'éco-conception des technologies microélectroniques, c'est-à-dire l'intégration de paramètres environnementaux dans leur processus de développement, permet de répondre à cet objectif. Notre travail de recherche a pour but de caractériser environnementalement les procédés de fabrication microélectronique afin de proposer des outils et méthodes pour leurs concepteurs. Nous avons donc modélisé une technologie microélectronique, et associé des impacts environnementaux aux flux entrants et sortants. Cela nous a permis de proposer des indicateurs environnementaux destinés à la R&D et adaptés à un site de développement et de production microélectronique.
|
492 |
Electrocinétique tridimensionnelle de particules colloïdales en géométrie microfluidique et application à la manipulation de cellulesHonegger, Thibault 17 November 2011 (has links) (PDF)
Les propriétés électrocinétiques de cellules ou de complexes colloïde-cellule visant leur manipulation individuelle dans une puce microfluidique devrait permettre de proposer de nouveaux types d'application dans le domaine des laboratoires-sur-puce et de la recherche biomédicale. Les travaux présentés dans ce manuscrit visent à créer une nouvelle technologie de puce microfluidique permettant la manipulation électrocinétique tridimensionnelle sans contact de particules colloïdales. Cette technologie innovante associée à la réalisation de particules colloïdales multifonctionnelles (Janus) permet d'étudier et de contrôler les interactions d'un complexe colloïde-cellule. Une technologie originale de puce microfluidique tridimensionnelle transparente présentant des niveaux d'électrodes biplanaires est développée sans couche résiduelle classiquement présente dans les technologies de scellement microfluidique. Parallèlement, de nouveaux types de colloïdes anisotropes (Janus) et multifonctionnels (fluorescents, fonctionnalisés avec des protéines...) sont fabriqués en associant la synthèse colloïdale aux techniques de la microélectronique et à la fonctionnalisation de surface. La compréhension et l'exploitation des forces électrocinétiques créées par un champ électrique alternatif et non-uniforme sur la solution colloïdale confinée dans cette puce permettent de proposer une nouvelle méthode de détermination du facteur de Clausius-Mossotti. Ce facteur est un paramètre intrinsèque à la solution colloïdale qui régit la force diélectrophorétique. La détermination expérimentale de ce facteur, combinée à une analyse théorique pour les solutions colloïdales étudiées, définit les paramètres du champ électrique à appliquer (fréquence, tension) pour localiser, séparer ou manipuler en trois dimensions des particules micrométriques de tout type (particules nu, fonctionnalisées, disymétriques...). Le mélange de ces particules dans des milieux de culture cellulaire contenant des cellules de lignées humaines crée des complexes colloïde-cellule. En fonction du type cellulaire, ces complexes se caractérisent par une cellule ayant internalisé des colloïdes ou une cellule décoré par des colloïdes attachés sur sa membrane. Soumis à des forces électrocinétiques déterminées, ces complexes démontrent des réponses duales des particules et des cellules contrôlables indépendamment. En combinant l'ingénierie des particules colloïdales et la technologie microfluidique de manipulation électrocinétique sans contact, des forces locales peuvent être exercées sur les cellules par l'intermédiaire des particules.
|
493 |
Cobalt thin films produced by conventional and photo-assisted metal-organic chemical vapour depositionChioncel, Mariana F. January 2000 (has links)
No description available.
|
494 |
Fabrication and Characterization of Nanowires and Quantum Dots for Advanced Solar Cell ArchitecturesSadeghimakki, Bahareh January 2012 (has links)
The commercially available solar cells suffer from low conversion efficiency due to the thermalization and transmission losses arising from the mismatch between the band gap of the semiconductor materials and the solar spectrum. Advanced device architectures based on nanomaterial have been proposed and being successfully used to enhance the efficiency of the solar cells. Quantum dots (QDs) and nanowires (NWs) are the nanosclae structures that have been exploited for the development of the third generation solar cell devices and nanowire based solar cells, respectively. The optical and electrical properties of these materials can be tuned by their size and geometry; hence they have great potential for the production of highly efficient solar cell. Application of QDs and NWs with enhanced optoelectronic properties and development of low-cost fabrication processes render a new generation of economic highly efficient PV devices. The most significant contribution of this PhD study is the development of simple and cost effective methods for fabrication of nanowires and quantum dots for advanced solar cell architectures.
In advanced silicon nanowires (SiNWs) array cell, SiNWs have been widely synthesised by the well-known vapor-liquid-solid method. Electron beam lithography and deep reactive ion etching have also been employed for fabrication of SiNWs. Due to the high price and complexity of these methods, simple and cost effective approaches are needed for the fabrication of SiNWs. In another approach, to enhance the cell efficiency, organic dyes and polymers have been widely used as luminescent centers and host mediums in the luminescent down shifting (LDS) layers. However, due to the narrow absorption band of the dyes and degradation of the polymers by moisture and heat, these materials are not promising candidates to use as LDS. Highly efficient luminescent materials and transparent host materials with stable mechanical properties are demanded for luminescent down shifting applications. In this project, simple fabrication processes were developed to produce SiNWs and QDs for application in advanced cell architectures. The SiNWs array were successfully fabricated, characterized and deployed in new cell architectures with radial p-n junction geometry. The luminescence down shifting of layers containing QDs in oxide and glass mediums was verified. The silica coated quantum dots which are suitable for luminescence down shifting, were also fabricated and characterized for deployment in new design architectures.
Silicon nanowires were fabricated using two simplified methods. In the first approach, a maskless reactive ion etching process was developed to form upright ordered arrays of the SiNWs without relying on the complicated nano-scale lithography or masking methods. The fabricated structures were comprehensively characterized. Light trapping and photoluminescence properties of the medium were verified. In the second approach, combination of the nanosphere lithography and etching techniques were utilized for wire formation. This method provides a better control on the wire diameters and geometries in a very simple and cost effective way. The fabricated silicon nanowires were used for formation of the radial p-n junction array cells. The functionality of the new cell structures were confirmed through experimental and simulation results.
Quantum dots are promising candidates as luminescent centers due to their tunable optical properties. Oxide/glass matrices are also preferred as the host medium for QDs because of their robust mechanical properties and their compatibility with standard silicon processing technology. Besides, the oxide layers are transparent mediums with good passivation and anti-reflection coating properties. They can also be used to encapsulate the cell. In this work, ordered arrays of QDs were incorporated in an oxide layer to form a luminescent down shifting layer. This design benefits from the enhanced absorption of a periodic QD structure in a transparent oxide. The down shifting properties of the layer after deployment on a crystalline silicon solar cell were examined.
For this purpose, crystalline silicon solar cells were fabricated to use as test platform for down shifting. In order to examine the down-shifting effect, different approaches for formation of a luminescence down shifting layer were developed. The LDS layer consist of cadmium selenide- zinc sulfide (CdSe/ZnS) quantum dots in oxide and glass layers to act as luminescent centers and transparent host medium, respectively. The structural and optical properties of the fabricated layers were studied. The concept of spectral engineering was proved by the deployment of the layer on the solar cell.
To further benefit from the LDS technique, quantum efficiency of the QDs and optical properties of the layer must be improved. Demand for the high quantum efficiency material with desired geometry leaded us to synthesis quantum dots coated with a layer of grown oxide. As the luminescence quantum efficiency of the QDs is correlated to the surface defects, one advantage of having oxide on the outer shell of the QDs, is to passivate the surface non-radiative recombination centers and produce QDs with high luminescent quantum yield. In addition, nanoparticles with desired size can be obtained only by changing the thickness of the oxide shell. This method also simplifies the fabrication of QD arrays for luminescence down shifting application, since it is easier to form ordered arrays from larger particles. QD superlattices in an oxide medium can be fabricated on a large area by a simple spin-coating or dip coating methods. The photonic crystal properties of the proposed structure can greatly increase the absorption in the QDs layer and enhance the effect of down shifting.
|
495 |
Varactor-Based Tunable Planar Filters and Post-Fabrication Tuning of Microwave FiltersRezazadeh Sereshkeh, Alborz January 2012 (has links)
Post-fabrication tuning of filters is usually realized by adding number of elements for tuning the frequency and/or controlling the couplings between the resonators. The task of these tuning elements is to control resonators center frequency, inter-resonators coupling and input/output couplings. While the most common tool for the post-fabrication tuning is to use tuning screws and rods, it is not usually practical to tune a planar filter with these tools.
This thesis introduces a novel method for global post-fabrication tuning of microwave filters by designing and adding a passive distributed-element circuit in parallel to the detuned filter. The idea, which is demonstrated by experimental results, has several advantages over traditional techniques for filter tuning that use screws. The quality factor of resonator reduces significantly after adding the tuning screws while the proposed method does not affect the Q of resonators.
The most important advantage of the proposed compensator circuit is that it can be employed without knowing details of the detuned filters. Since the compensator circuit will be added in parallel to the detuned filter, it will not affect the elements of filter individually. So whether the filter is planar or cavity, the proposed circuit can be used for the tuning. The experimental results obtained demonstrate the validity of this method.
The dissertation also presents a novel concept for designing a center frequency and bandwidth tunable microstrip filter by using GaAs varactors. The proposed isolated coupling structure which is used in this filter makes the bandwidth tuning possible by reducing the loading effect of coupling elements on the resonators. The center frequency of this filter can be also tuned by using a different set of varactors connected to resonators. A 3-pole filter based on this concept has been designed and simulated. The concept can be expanded to higher order filters.
|
496 |
Reliability Analysis of Nanocrystal Embedded High-k Nonvolatile MemoriesYang, Chia-Han 01 December 2011 (has links)
The evolution of the MOSFET technology has been driven by the aggressive shrinkage of the device size to improve the device performance and to increase the circuit density. Currently, many research demonstrated that the continuous polycrystalline silicon film in the floating-gate dielectric could be replaced with nanocrystal (nc) embedded high-k thin film to minimize the charge loss due to the defective thin tunnel dielectric layer.
This research deals with both the statistical aspect of reliability and electrical aspect of reliability characterization as well. In this study, the Zr-doped HfO2 (ZrHfO) high-k MOS capacitors, which separately contain the nanocrystalline zinc oxide (nc-ZnO), silicon (nc-Si), Indium Tin Oxide (nc-ITO) and ruthenium (nc-Ru) are studied on their memory properties, charge transportation mechanism, ramp-relax test, accelerated life tests, failure rate estimation and thermal effect on the above reliability properties.
C-V hysteresis result show that the amount of charges trapped in nanocrystal embedded films is in the order of nc-ZnO>nc-Ru>nc-Si~nc-ITO, which might probably be influenced by the EOT of each sample. In addition, all the results show that the nc-ZnO embedded ZrHfO non-volatile memory capacitor has the best memory property and reliability. In this study, the optimal burn-in time for this kind of device has been also investigated with nonparametric Bayesian analysis. The results show the optimal burn-in period for nc-ZnO embedded high-k device is 5470s with the maximum one-year mission reliability.
|
497 |
Modeling And Development Of A MEMS Device For Pyroelectric Energy ScavengingMostafa, Salwa 01 August 2011 (has links)
As the world faces an energy crisis with depleting fossil fuel reserves, alternate energy sources are being researched ever more seriously. In addition to renewable energy sources, energy recycling and energy scavenging technologies are also gaining importance. Technologies are being developed to scavenge energy from ambient sources such as vibration, radio frequency and low grade waste heat, etc. Waste heat is the most common form of wasted energy and is the greatest potential source of energy scavenging.
Pyroelectricity is the property of some materials to change the surface charge distribution with the change in temperature. These materials produce current as temperature varies in them and can be utilized to convert thermal energy to electrical energy. In this work a novel approach to vary temperature in pyroelectric material to convert energy has been investigated.
Microelectromechanical Systems or MEMS is the new technology trend that takes advantage of unique physical properties at micro scale to create mechanical systems with electrical interface using available microelectronic fabrication techniques. MEMS can accomplish functionalities that are otherwise impossible or inefficient with macroscale technologies. The energy harvesting device modeled and developed for this work takes full benefit of MEMS technology to cycle temperature in an embedded pyroelectric material to convert thermal energy from low grade waste heat to electrical energy. Use of MEMS enables improved performance and efficiency and overcomes problems plaguing previous attempts at pyroelectric energy conversion. A Numerical model provides accurate prediction of MEMS performance and sets design criteria, while physics based analytical model simplifies design steps. A SPICE model of the MEMS device incorporates electrical conversion and enables electrical interfacing for current extraction and energy storage. Experimental results provide practical implementation steps towards of the modeled device. Under ideal condition the proposed device promises to generate energy density of 400 W/L.
|
498 |
Scattering of guided waves in thick gratings at extreme anglesKurth, Martin Lyndon January 2006 (has links)
The aim of this project was to develop a passive optical compensating arrangement that would allow the formation and continued stability of interference patterns over a long timescale and also to investigate optical wave scattering in thick gratings at extreme angles of scattering. A novel passive arrangement based on a Sagnac interferometer is described that produces interference patterns more stable than those produced by a conventional arrangement. An analysis of the arrangement is presented that shows it to be an order of magnitude more stable than an equivalent conventional approach. The excellent fringe stability allowed holographic gratings with small periods (~ 0.5 μm) to be written in photorefractive lithium niobate with low intensity writing fields (~mW/cm2) produced by a He:Ne laser, despite long grating fabrication times (~ 1000 s). This was possible because the optical arrangement compensated for phase shifts introduced by translational and rotational mirror motion caused by environmental perturbations. It was shown that the rapid introduction of a phase shift in one of the writing fields can change the direction of energy flow in the two-wave mixing process. It was found that the improvement in stability of the modified Sagnac arrangement over a conventional interferometer decreased when the crossing angle was increased and that the point about which the mirrors are rotated greatly affects the stability of the arrangement. For a crossing angle of 12 degrees, the modified Sagnac arrangement is more than twice as stable when the mirrors are rotated about their midpoints, rather than their endpoints. Investigations into scattering in the extremely asymmetrical scattering (EAS) geometry were undertaken by scattering light from a 532nm Nd:YAG laser off gratings written in photorefractive barium titanate and lithium niobate. Despite the difficulties posed by background noise, there was very good agreement between the observed scattered field and that predicted by a previously established theoretical model. Thus, this work represents the first experimental observation of EAS in the optical part of the spectrum.
|
499 |
A remote laboratory for testing microelectronic circuits on silicon wafersMohtar, Aaron January 2009 (has links)
This thesis explores the technical feasibilty of creating a remote laboratory in the field of microelectronics fabrication. It also includes the evaluation of the developed laboratory as a teaching tool. / PhDElectronicEngineering
|
500 |
Observation de procédés basée sur des sous-modèles : applications au traitement et au transport de la matière /Lachance, Luc, January 2007 (has links) (PDF)
Thèse (Ph. D.)--Université Laval, 2007. / Bibliogr.: f. [183]-186. Publié aussi en version électronique dans la Collection Mémoires et thèses électroniques.
|
Page generated in 0.0983 seconds