Ce travail concerne la réalisation et la caractérisation de dispositifs hyperfréquences agiles en fréquence à base du matériau ferroélectrique KTa1-xNbxO3 (KTN) déposé en couche mince. Doté d'une permittivité diélectrique élevée (er = 700 à 10 GHz et Ebias = 0 kV/cm), KTN est un candidat prometteur pour la reconfigurabilité et la miniaturisation des dispositifs hyperfréquences. Ses pertes restent néanmoins conséquentes (tanδr = 0,3 à 10 GHz et Ebias = 0 kV/cm) et sont en partie à l'origine des pertes globales des dispositifs hyperfréquences réalisés. Afin de limiter ces pertes, une double approche a été engagée : (1) réduction des pertes diélectriques par le dopage du matériau KTN par un oxyde à faibles pertes : MgO à 3% et 6% en moles et (2) réduction des pertes globales par le confinement du matériau KTN dopé dans les zones actives des dispositifs hyperfréquences. Les couches minces de KTN non dopé et dopé d'épaisseur ~ 600 nm ont été déposées sur substrats de saphir orienté R par ablation laser pulsé (PLD). Deux compositions différentes (KTa0,5Nb0,5O3 et KTa0,65Nb0,35O3) ont été sélectionnées pour cette étude. Des dispositifs coplanaires imprimés sur les films ferroélectriques ont été réalisés et caractérisés dans la bande d'intérêt 1 GHz-20 GHz. Le dopage à 6% assure le meilleur compromis pertes / agilité avec une réduction significative des pertes globales de 0,73 à 0,20 (facteur ~ 4) du dispositif résonant imprimé sur KTa0,5Nb0,5O3 après son confinement par microgravure laser. Une agilité en fréquence de 8% est obtenue sous Ebias ≈ 75 kV/cm. L'étude d'une antenne à ondes de fuite reconfigurable en bande Ku a ensuite été mise en oeuvre. Les couches minces de KTa0,5Nb0,5O3 d'épaisseur ~ 600 nm ont été déposées par PLD sur substrats de saphir R, puis le matériau ferroélectrique a été localisé par microgravure laser dans les 6 zones actives de l'antenne (constituée de 6 tronçons). L’évolution du coefficient de réflexion sous Ebias ≈ 85 kV/cm montre une agilité en fréquence égale à 2%. Un gain maximal de 6,7 dBi a été mesuré à f = 17 GHz et Ebias = 0 kV/cm, conformément aux résultats de simulation. / This work deals with the fabrication and characterization of frequency tunable microwave devices based on ferroelectric KTa1-xNbxO3 (KTN) thin films. KTN material is a promising candidate for the tunability and miniaturization of microwave devices, due to its high dielectric permittivity (er= 700 at 10 GHz and Ebias= 0 kV/cm). Nevertheless its intrinsic loss (tanδr= 0.3 at 10 GHz and Ebias= 0 kV/cm) strongly impacts the global loss of the tunable microwave devices. To reduce this, a twofold solution has been investigated: (1) reduction of the loss tangent by doping KTN material with a low loss oxide, namely MgO (3% and 6% in mol.) and (2) confinement of the doped KTN film in efficient regions of the microwave devices and removal in noncritical areas by laser microetching. The ~ 600 nm-thick undoped and doped KTN films have been grown by Pulsed Laser Deposition (PLD) on R-plane sapphire substrates. Two different compositions (KTa0.5Nb0.5O3 and KTa0.65Nb0.35O3) were specifically selected for this study. Microwave measurements have been performed on KTN-based coplanar devices from 1 GHz to 20 GHz. Stub resonator printed on confined 6% doped KTa0.5Nb0.5O3 film exhibits the best loss/agility trade-off with a significant global loss reduction from 0.73 to 0.20 (factor ~ 4) with a 8% frequency tunability under Ebias≈ 75 kV/cm.Thereafter, the study of a reconfigurable Ku-band leaky-wave antenna has been carried out. A ~600 nm-thick KTa0.5Nb0.5O3 film was deposited by PLD on R-plane sapphire substrate. The ferroelectric material was localized by laser microetching on 6 specific areas of the antenna (consisted of 6 sections). The variation of the reflection coefficient under biasing (Ebias≈ 85 kV/cm) demonstrates a frequency tunability of 2%. A gain equal to 6.7 dBi has been measured at f= 17 GHz and Ebias= 0 kV/cm, in accordance with the numerical results.

A presente tese descreve a síntese e caracterização de 10 novas séries de moléculas na forma de banana contendo os anéis isoxazolina e isoxazol como reais candidatos na preparação de cristais líquidos polares. Foram avaliados parâmetros estruturais tais como o tipo de função conectora do centro curvado com os braços mesogênicos, a natureza do heterociclo e a sua posição relativa ao núcleo. A síntese dos compostos contou com a metodologia de preparação do anel isoxazolina, a cicloadição [3+2] 1,3-dipolar entre alcenos e óxidos de nitrila, os quais foram gerados pelas oximas preparadas a partir de aldeídos alifáticos e aromáticos. Todas as isoxazolinas foram oxidadas aos seus respectivos isoxazóis utilizando dióxido de manganês. Foram utilizadas ainda reações de alquilação, redução, desproteção, hidrogenólise, olefinação, adição de aminas à aldeídos e esterificação. Todas as moléculas sintetizadas foram caracterizadas por RMN de 1H e 13C, além de serem observadas por MOLP para determinação dos seus pontos de fusão. As moléculas que apresentaram comportamento mesomórfico foram ainda caracterizadas por DSC, XRD e voltagem triangular. No capítulo 3 é descrita a síntese dos isoftalatos 19a-b, 20a-b, 26a-b e 27a-b. No subgrupo dos Isoftalatos derivados de isoxazóis e isoxazolinas 3,5-diarilsubstituídos foi possível a síntese apenas do composto 11d que não apresentou comportamento líquido cristalino No subgrupo dos isoftalatos derivados de isoxazóis e isoxazolinas 3-alquil-5-arilsubstituídos as isoxazolinas 19a-b não apresentaram comportamento líquido-cristalino. Foram encontradas mesofases para os compostos 20a-b que ainda não foram determinadas com as técnicas disponíveis. Os isoxazóis 20a-b apresentaram uma provável Blue Phase logo após o resfriamento do isotrópico, que rapidamente se converte em uma provável mesofase monotrópica ferroelétrica com texturas e padrão de XRD peculiares até então não observada na literatura. No subgrupo dos isoftalatos derivados de isoxazóis e isoxazolinas 3-aril-5-alquilsubstituídos 26a-b e 27a-b não foi observado comportamento líquido-cristalino. O capítulo 4 descreve a síntese das isoftaliminas 35, 36, 44, 45, 50a-b, 51a-b, 56a-d, 57a-d, 63a-b e 64a-b. No subgrupo dos isoxazóis e isoxazolinas 3,5-diarilsubstituídos 35, 36, 44 e 45 foram observadas as mesofases B7 e B1 apenas com a inversão da orientação do anel isoxazol como braçomesogênicos dos compostos finais, enquanto que as isoxazolinas não apresentaram mesofases. A mesofase B7 do composto 36 apresentou comportamento antiferroelétrico enquanto que a mesofase B1 do composto 45 não mostrou resposta frente ao campo elétrico aplicado, além disso, o XRD mostrou que tal mesofase colunar B1 pode ser uma fase 3D modulada. No subgrupo das isoxazolinas e isoxazóis 3-alquil-5-arilsubstituídos 50a-b e 51a-b foram observadas fases do tipo DC para as isoxazolinas 50a-b, a qual deve ser confirmada por FFTEM. No subgrupo dos materiais 3-aril-5-alquilsubstituídos 56a-d, 57a-d, 63a-b e 64a-b foram observadas mesofases SmXPF para os compostos 56b-d. Os isoxazóis 57a-d apresentaram texturas similares, porém não apresentaram mesofase, mas os mesmos seguem o mesmo padrão de difração das isoxazolinas do capítulo 3. Apenas a isoxazolina 63b dos compostos perfluorados apresentou mesofase No capítulo 5 é descrita a síntese de ésteres não-simétricos contendo os heterociclos isoxazol e isoxazolinas como núcleo central 71a-f, 82, 83, 84 e 85. No primeiro subgrupo todos os ésteres cinâmicos 71a-f apresentaram comportamento mesomórfico com grandes faixas de temperaturas nas mesofases. No segundo subgrupo as isoxazolinas 82 e 83 apresentaram comportamento completamente distinto, onde só foi observada a formação de uma mesofase SmB para o composto que tem a posição éster localizada na direção do nitrogênio do heterociclo. Já os isoxazóis 84 e 85 deste subgrupo apresentaram as mesofases N e SmC em temperaturas bastante similares, porém, a observação desses materiais em uma cela alinhada revelou o crescimento de filamentos na transição N-SmC apenas para o composto 85, o qual também possui a porção éster na direção do nitrogênio do anel isoxazol. O capítulo 6 traz a síntese dos ésteres e iminas simétricos 88, 89, 94 e 95 utilizando os heterociclos como núcleo central, os quais apresentaram mesofases SmC e N. Além disso, o diéster 89 derivado de isoxazol apresentou a mesma característica que o composto 85 do capítulo 5, apresentando uma transição N-SmC com crescimento de filamentos perpendiculares à direção de alinhamento da amostra dentro da cela, podendo estar relacionada à uma mesofase NTB. / This thesis describe the synthesis and characterization of 10 new series of banana shaped molecules containing the isoxazoline and isoxazole rings as real players for preparation of polar liquid crystals. It was evaluate structural parameters such as the type of connecting function of the bent core with the mesogenic arms, the heterocycle nature and its position relative to the central core. The synthesis of the compounds included the methodology of preparation of the isoxazoline ring, the [3 + 2] 1,3-dipolar cycloaddition between alkenes and nitrile oxides, which were generated by the oximes prepared from aliphatic and aromatic aldehydes. Furthermore, all isoxazolines were oxidized to its respective isoxazoles using manganese dioxide. Besides the described methodologies, alkylation, reduction, deprotection, hydrogenolysis, olefination, addition of amines to the aldehydes and esterification reactions were used. All the synthesized molecules were characterized by 1H NMR and 13C NMR, and also observed by POM for determination of its melting points. The molecules previously analyzed by POM that showed mesomorphic behavior were characterized by DSC, XRD and triangular voltage still. Chapter 3 describes the synthesis of isophthalates 19a-b, 20a-b, 26a-b e 27a-b. In the subgroup of isophthalates derived from isoxazoles and isoxazolines 3,5-diarylsubstituted it was possible to synthesize only compound 11d which did not show liquid crystalline behavior In the subgroup of the isophthalates derived from isoxazoles and isoxazolines 3-alkyl-5-arylsubstituted the isoxazolines 19a-b did not show liquid crystalline behavior. It was found mesophases for compounds 20a-b that still could not be determined with the available techniques. The isoxazoles 20a-b presented a probable Blue Phase soon after cooling from the isotropic which quickly converts into a probable ferroelectric monotropic mesophase with peculiar textures and pattern of XRD until then not observed in the literature. In the subgroup of the isophthalates of isoxazoles and isoxazolines 3-aryl-5-alkylsubstituted 26a-b and 27a-b no liquid crystalline behavior was observed. Chapter 4 describes the synthesis of isophthalimines 35, 36, 44, 45, 50a-b, 51a-b, 56a-d, 57a-d, 63a-b and 64a-b. In the subgroup of the isoxazoles 3,5-diarylsubstituted 35, 36, 44 and 45 the B7 and B1 mesophases were observed only with the inversion of the isoxazole ring orientation as mesogenic arm of thefinal compounds whereas the isoxazolines did not present mesophases. The B7 mesophase of the compound 36 showed antiferroelectric switching while the B1 mesophase of the compound 45 showed no response to the applied electric field, in addition, the XRD showed that such B1 columnar mesophase could be a 3D modulated phase one. In the subgroup of 3-alkyl-5-arylsubstituted isoxazolines and isoxazoles 50a-b and 51a-b DC phases were observed for isoxazolines 50a-b which should be confirmed by FFTEM. The SmXPF mesophase were observed for componds 56b-d in the subgroup of 3-aryl-5-alkylsubstituted materials 56a-d, 57a-d, 63a-b e 64a-b. The isoxazoles 57a-d presented similar textures although did not showed mesophase, but they follow the same diffraction pattern of the chapter 3 isoxazolines. Only the isoxazoline 63b of the perfluorinated compounds showed mesophase In chapter 5 is described the synthesis of non-symmetric esters containing isoxazol and isoxazolines heterocycles as central core 71a-f, 82, 83, 84 e 85. In the first subgroup all the cinnamic esters 71a-f showed mesomorphic behavior with large mesophases temperature ranges. In the second subgroup the isoxazolines 82 and 83 showed completely different behavior which only was observed the SmB mesophase formation for compound having the ester position towards the heterocycle nitrogen. Furthermore, the isoxazoles 84 and 85 of this subgroup showed the N and SmC mesophases at very similar temperatures, however, the observation of these materials in an aligned cell revealed the filamentary growth in the N-SmC transition only for compound 85, which also has the ester moiety in the direction of the isoxazole ring nitrogen. Chapter 6 brings forward the synthesis of symmetrical esters and imines 88, 89, 94 and 95 using the heterocycles as the central cores, which showed SmC and N mesophases. Moreover, the isoxazole derived diester 89 showed the same feature as compound 85 of Chapter 5, exhibiting a N-SmC transition with filament growth perpendicular to the rubbing direction of the cell which may be related to a NTB mesophase.

<p style="text-align: justify;">Kroz istoriju, otkrivanje novih materijala i njihovog dizajna dovodilo je do tehnolo&scaron;kih revolucija. U pro&scaron;lom veku, novi materijali naprednih svojstava uveli su elektronske uređaje u svakodnevni život čoveka. Industrija mikročipova predstavlja ogroman deo svetskog trži&scaron;ta, i traži neprestan razvoj da bi pružila bolje proizvode potro&scaron;ačima. Početkom ovog veka, nova grupa materijala, pod nazivom multiferoici, privukla je pažnju naučno-istraživačkog dru&scaron;tva u svetu. Ovi materijali poseduju jedinstvenu karakteristiku da istovremeno ispoljavaju vi&scaron;e od jedne feroične osobine (feroelektričnost, feromagnetizam, feroelastičnost), a &scaron;to je jo&scaron; važnije, mogu da ostvare interakciju među njima. Naime, magnetizacija multiferoika se može postići primenom spolja&scaron;njeg električnog polja, a takođe se mogu i polarisati primenom spolja&scaron;njeg magnetnog polja. Ovo vrlo interesantno svojstvo otvara potencijlanu primenu u oblasti hibridne računarske memorije, senzora, aktuatora, i dr. Sredinom pro&scaron;log veka, jednofazni multiferoici su prvi privukli pažnju, ali poseldnjih godina, kompozitni multiferoici su pokazali bolje rezultate u pogledu funkcionalnih karakteristika. Trend minijaturizacije je takođe prisutan u ovoj oblasti, stoga su multiferoični tanki filmovi vrlo atraktivni u istraživačkih krugovima ne samo zbog niske potro&scaron;nje električne energije, malog utro&scaron;ka meterijala i malih dimenzija, već i zbog dobre magnetoelektrične interakcije.&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Glavni cilj ove doktorske disertacije je bio određivanje optimalnog procesa sinteze/depozicije, i vr&scaron;enje strukturne i funkcionalne karakterizacije multiferoičnih vi&scaron;eslojnih tankih filmova, sačinjenih od naizmenično deponovanih feroelektričnih BaTiO₃ i fero/ferimagnetnih NiFe₂O₄ slojeva (uglavnom na silicijumskim supstratima sa slojem platine). Različite strukture slojeva dizajnirane su u cilju određivanja optimalne, koja bi dala najvi&scaron;e vrednosti magnetoelektričnog efekta.&nbsp;&nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; U prvom koraku, sintetisani su stabilni solovi/rastvori prekursora, veličine čestica od nekoliko nanometara, reolo&scaron;kih karakteristika pogodnih za depoziciju tehnikama iz tečne faze. Vi&scaron;eslojni filmovi su dobijeni &quot;spin&quot; procesom nano&scaron;enja, pri čemu je termički tretman svakog sloja na 500 &deg;C bio neophodan radi potpunog otparavanja zaostalog rastvarača. Filmovi bez pukotina, ukupne debljine ispod 1 &mu;m, uniformne debljine sloja (60 nm sloj BaTiO₃ i 40 nm sloj NiFe₂O₄) i ravne povr&scaron;ine mogu biti dobijeni sinterovanjem u temperaturnom opsegu od 750 do 900 &deg;C. Strukturna karakterizacija je potvrdila sistem bez prisustva sekundarnih faza, sačinjen od perovskitnog BaTiO₃ i spinelnog NiFe₂O₄. Dielektrična merenja su bila u saglasnosti sa mikrostrukturnom analizom, i vrednostima dielektrične konstante tipične za nanostrukturni sistem, niske vrednosti dielektričnih gubitaka i male provodljivosti. Uticaj međuslojne polarizacije, koja nalikuje Debajeovoj relaksaciji, izražena kroz povećanje dielektrične konstante uspod 100 kHz, bio je jači u nižoj frekventnoj regiji na povi&scaron;enim temperaturama usled termičke aktivacije nosilaca naelektrisanja u feritnoj fazi. Samo čist BaTiO₃ film je pokazao slab feroelektrični histerezis nepotpune saturacije, malo vi&scaron;e polarizacije filma sinterovanog na 900 &deg;C usled ogrubljivanja strukture. Meuđuslojni efekti su takođe primećeni kod feroelektričnih merenja na sobnoj temperaturi, sa izraženijim prisustvom kada se primeni jače električno polje. Na osnovu dielektričnih i feroelektričnih merenja, zaključeno je da film sa debljim titanatnim i tanjim feritnim slojevima ima najverovatnije najbolji dizajn slojeva. Magnetne histerezisne petlje su snimljene na sobnoj temperaturi za čiste NiFe₂O₄ filmove i vi&scaron;eslojne filmove. Analizom vi&scaron;eslojnih filmova različitog dizajna slojeva, pretpostavljeno je da zatezanje nastalo mehaničkom interakcijom između titanatnih i feritnih slojeva jeste prisutno, i da raste sa povećanjem broja kontaktnih povr&scaron;ina, stoga film sa tanjim titanatnim i feritnim slojevima verovatno predstavlja najbolji izbor sa aspekta megnetnih osobina.</p> / <p>Through history, discovery of new materials and material design have led to technological revolutions. In the last century, new materials with advanced properties have introduced electronic devices in our everyday lives. Microchip industry represents one huge part of world market, and needs constant development to provide better products to consumers. In the beginning of this century, a novel group of materials, called multiferroics, have attracted close attention of research society around the world. These materials have a unique property to express more than one ferroic property simultaneously (feroelectricity, ferromagneticity, ferroelasticity), and more important, to achieve coupling between them. Namely, magnetization of multieferroic may be changed with application of external electric field, and they can be polarized with application of the external magnetic field. This is a very interesting property that opens the potential applications in fields of hybrid computer memory, sensors, actuators, etc. In the middle of last century, single phase multiferroics were the first to trigger interest in this special property, but in recent years, composite multiferroics have shown more promising results in terms of functional properties. The trend of miniaturization is also present in this field, so multiferroic thin films are very attractive for research not only because of low power and material consumption or small size, but also because of strong magnetoelectric coupling.<br />The main goal of this thesis was to determine optimal synthesis/deposition process, and perform structural and functional characterization of multiferroic multilayer thin films, composed of ferroelectric BaTiO3 and ferro/ferrimagnetic NiFe2O4 layers in alternating order (mostly on platinum coated silicon substrates). Different layer structures were designed in order to find optimal one which could show the strongest magnetoelectric effect.<br />In the first step, stable precursor sols/solutions were synthesized, with particle size of a few nanometes, and rheological properties suitable for solution deposition. The multilayered thin films were obtained by spin coating and thermal treatment of each layer on 500 &deg;C was necessary in order to completely evaporate traces of residual solvents. Crack free films with overall thickness below 1 &mu;m, uniform single layer thickness (60 nm of BaTiO3 layer and 40 nm of NiFe2O4) and flat surface can be obtained by sintering in temperature range from 750 to 900 &deg;C. Structural characterization confirmed that secondary phase free system with microstructure on nanometer scale was obtained, composed of perovskite BaTiO3 and spinel NiFe2O4. Dielectric measurements were in agreement with microstructural characterization, showing the values of dielectric constant typical for nanostructured system, low values of dielectric losses and low conductivity. The influence of interfacial polarization, resembling Debye behavior, expressed as a rise of dielectric constant below 100 kHz, was stronger in lower frequency range on higher temperatures due to thermal activation of mobile charge carriers in ferrite phase. Only the pure BaTiO3 films showed weak unsaturated ferroelectric hysteresis loops, with slightly higher polarization of films sintered on 900 &deg;C due to coarsening of the structure. The interface effects were also detected in ferroelectric measurements on room temperatures, showing increased presence when higher field is applied. Regarding dielectric and ferroelectric characterization, it was concluded that the multilayered films with thick titanate and thin ferrite layers may probably have the most promising layer design. Magnetic hysteresis loops were recorded on room temperatures for the pure NiFe2O4 and multilayers films. By analysis of different layer design of multilayers, it was assumed that mechanical straining between the ferrite and titanate layers may be present, and increases with the number of contact surfaces, thus the films with thinner titanate and ferrite layers may probably have the best layer design from aspect of magnetic properties.</p>

Le développement de nouveaux matériaux est essentiel dans la réalisation de capteurs de petites dimensions et pour les composants micro-nano-optoélectroniques. Les matériaux à base d'oxydes en sont de bons candidats. Ce travail de thèse a concerné la synthèse de matériaux ferroélectriques tels le BaTiO3 (BTO) et le Ba1-xSrxTiO3 (BST), associés à des électrodes inférieures et supérieures en oxyde d'indium-d'étain (ITO), tous déposés par pulvérisation cathodique RF (radio fréquence). Nous nous sommes concentrés sur la relation existante entre les propriétés optiques et électro-optiques de guide d'ondes et l'orientation cristalline, la couche d'interface ainsi que la nature du substrat. Après la caractérisation des propriétés structurales, nous avons évalué les propriétés optiques de ces matériaux par la technique du couplage par prisme pour une gamme de longueurs d'ondes de l'UV au proche IR. Les résultats ont montré un bon confinement de la lumière dans le film, avec des pertes planaires de propagation optique de l'ordre de 3 dB/cm aux longueurs d'onde télécoms, résultats à l'état de l'art pour ces matériaux.Cette méthode de couplage optique a permis de mettre en évidence les propriétés électro-optiques du BTO et du BST dans cette même gamme de longueurs d'onde et pour les deux polarisations optiques, à partir de la variation des spectres de réflectivité. Si le BTO a montré un coefficient r33 de 23 pm/V aux longueurs d'onde télécoms, nous avons mesuré autour de 19 pm/V pour le BST(70/30). / The development of new material is essential for the realization of small sized sensors and for micro-nanooptoelectronics. Functional oxides are candidates of a major interest for the realization of new devices. This work concerns the growth of heterostructures formed by BaTiO3 (BTO) or Ba1-xSrxTiO3 (BST) ferroelectric multilayers associated to (ITO: Indium Tin Oxide) conductive oxides bottom and top electrodes. We focused on the relation between waveguide and electro-optic (EO) properties and the crystalline orientation, the interface layer and the nature of the substrate.RF (Radio Frequency) magnetron sputtering is a selected deposition technique for these applications. While the characterization of properties has become an integral part of research for the understanding of the material behavior, we evaluate the optical properties by prism coupling at wavelengths ranging from 450 nm to 1539 nm.The guided mode spectrum indicates that a good confinement of light is achieved in the film witch is necessary for optical waveguide devices. Ordinary and extraordinary refractive indices for BST/BTO are respectively 2,111/2,224 and 2,052/2,219 at 1539 nm. Optical propagation loss in a planar waveguide configuration in TE at 1539 nm wavelength was determined to be 3 dB/cm. The electro-optic effects were investigated in this study through the variation of the resonant coupling angle, refractive index variation ( n) in the prism coupling measurements. Finally, the EO coefficient of our BTO is 23 pm/V and 19 pm/V for BST(70/30) at 1539 nm.

During the last decade ferroelectrics based on doped hafnium oxide emerged as promising candidates for realization of ultra-low-power non-volatile memories. Two spontaneous polarization states occurring in the material that can be altered by applying electrical fields rather than forcing a current through and the materials compatibility to CMOS processing are the main benefits setting the concept apart from other emerging memories. 1T1C ferroelectric random access memories (FeRAM) as well as 1T FeFET concepts are under investigation. In this article the application of hafnium based ferroelectric memories in different flavours and their ranking in the memory landscape are discussed.

In der vorliegenden Arbeit werden durch den inversen piezoelektrischen Effekt kontrolliert Dehnungen in Lanthanmanganatschichten eingebracht und ihr Einfluss auf die Eigenschaften der Schichten untersucht. Dazu wird im ersten Teil der Arbeit ein Zweischichtsystem bestehend aus einer Manganatschicht aus La0,7Sr0,3MnO3, La0,8Ca0,2MnO3 oder La0,7Ce0,3MnO3 und einer piezoelektrischen Schicht aus PbZr0,52Ti0,48O3 untersucht. Der epitaktisch auf Einkristallsubstraten abgeschiedene Aufbau entspricht einer Feldeffekt-Transistor-Struktur. Neben den Effekten der Dehnung auf den elektrischen Widerstand der Manganatschicht wird auch der elektrische Feldeffekt untersucht. Durch mechanische Klemmung des Substrats können nur kleine Dehnungen in die Manganatschichten eingebracht werden. Um größere und homogene Dehnungen steuerbar in Manganatschichten einzubringen, werden im zweiten Teil der Arbeit La0,7Sr0,3MnO3 - Schichten auf piezoelektrischen Einkristallsubstraten der Verbindung (1-x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 mit x = 0,28 epitaktisch abgeschieden. Der Einfluss von mechanischen Dehnungen von bis zu 0,1% auf den elektrischen Transport, die ferromagnetische Übergangstemperatur und die Magnetisierung kann so eingehend untersucht werden. Es wird ein außergewöhnlich großer Einfluss von Dehnungen auf die Eigenschaften von La0,7Sr0,3MnO3 gefunden. / In this work, strain arising from the inverse piezoelectric effect is induced into lanthanum manganite thin films in order to change and control their properties. In the first part of this work, manganite films of the compositions La0.7Sr0.3MnO3, La0.8Ca0.2MnO3 or La0.7Ce0.3MnO3 are combined with a piezoelectric layer of the composition PbZr0.52Ti0.48O3 in a bilayer system. This structure is grown epitaxially on single crystal substrates and corresponds to a field-effect transistor setup. Besides effects of strain on the electrical resistance of the manganite layers, field effects are observed. Due to clamping of the substrate, only small strains can be induced to the manganite films. In order to apply larger and homogeneous controllable strain to the manganite layers, thin films of La0.7Sr0.3MnO3 are grown epitaxially on piezoelectric single crystal substrates of the composition (1-x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3, x = 0.28. Strain levels up to 0.1% are reached. The influence of the strain on electrical transport, ferromagnetic transition temperature and magnetization is analyzed. A remarkably large influence of the strain on the properties of La0.7Sr0.3MnO3 is found.

Multiferroika, also Materialien, die gleichzeitig ferroelektrische und ferromagnetische Eigenschaften besitzen, sind sowohl für die Forschung um das Verständnis dieser Eigenschaften als auch für potentielle Anwendungen in neuartigen Speichern von großem Interesse. Die Rasterkraftmikroskopie spielt hierbei eine entscheidende Rolle, da mit ihrer Hilfe die Eigenschaften solcher Probensysteme auf der Nanometerlängenskala untersucht werden können. In der vorliegenden Arbeit werden drei unterschiedliche multiferroische Systeme auf ihre ferroelektrischen und ferromagnetischen Eigenschaften sowie auf deren Kopplung hin mit Hilfe verschiedener Methoden der Rasterkraftmikroskopie untersucht. Im Grundlagenteil dieser Arbeit wird dazu zunächst eine Methode vorgestellt, mit der magnetische Spitzen für die Rasterkraftmikroskopie charakterisiert werden können, so dass in experimentellen Untersuchungen die Wechselwirkung zwischen der untersuchenden Spitze und der untersuchten Probe besser abgeschätzt werden kann. Des Weiteren wird eine Möglichkeit vorgestellt, Kelvin-Sonden-Rasterkraftmikroskopie mit der magnetischen Rasterkraftmikroskopie zu kombinieren, um elektrostatische Artefakte bei den Untersuchungen der magnetischen Eigenschaften auszuschließen. Im experimentellen Teil der Arbeit werden zuerst die beiden einphasigen Multiferroika BiFeO3 und BiCrO3 untersucht. Es kann experimentell gezeigt werden, dass für die Untersuchung der ferromagnetischen Eigenschaften von Multiferroika die Kombination aus Kelvin-Sonden-Rasterkraftmikroskopie und magnetischer Rasterkraftmikroskopie notwendig ist und mit dieser Technik die magnetischen und elektrostatischen Kräfte ohne Übersprechen voneinander getrennt werden können. Mit Hilfe der Piezoantwort-Rasterkraftmikroskopie werden die ferroelektrischen Domänen dieser Systeme untersucht und lokal die Polarisationsrichtung in den einzelnen Domänen bestimmt. Weiterhin wird an einem Schichtsystem, bestehend aus einem Nickelfilm, der auf BaTiO3 aufgebracht ist, die magnetoelektrische Kopplung analysiert. Hierbei wird vor allem der Einfluss einer elektrischen Spannung auf die leichte magnetische Achse des Nickelfilms studiert, sowie die Veränderung der magnetischen Domänenstruktur in Abhängigkeit der angelegten elektrischen Spannung.:Abbildungsverzeichnis Abkürzungen 1. Einleitung I. Grundlagen 2. Ferroische Materialien 2.1. Ferromagnetika 2.2. Ferroelektrika 2.3. Kopplung ferroischer Eigenschaften: Multiferroika 3. Messmethoden 3.1. Grundlagen der Rasterkraftmikroskopie 3.1.1. Kontakt-Rasterkraftmikroskopie 3.1.2. Nichtkontakt-Rasterkraftmikroskopie 3.2. Piezoantwort-Rasterkraftmikroskopie 3.2.1. Aufbau und Grundlagen 3.2.2. Verwendete Messgeräte 3.3. Kelvin-Sonden-Rasterkraftmikroskopie 3.4. Magnet-Rasterkraftmikroskopie 3.4.1. Grundlagen 3.4.2. MFM in externen Magnetfeldern 3.4.3. Verwendete Messgeräte II Experimente 4. Experimente 4.1. Charakterisierung magnetischer Spitzen 4.2. Untersuchungen an BiFeO3 4.2.1. Eigenschaften von BiFeO3 4.2.2. Piezoantwort-Rasterkraftmikroskopie-Messungen 4.2.3. Magnetische-Rasterkraftmikroskopie-Messungen 4.3. Untersuchungen an BiCrO3 4.3.1 Eigenschaften von BiCrO3 4.3.2. Piezoantwort-Rasterkraftmikroskopie-Messungen 4.3.3. Magnetische-Rasterkraftmikroskopie-Messungen 4.4. Untersuchungen an Ni-Dünnfilmen auf BaTiO3 4.4.1. Magnetische Eigenschaften von Ni 4.4.2. Theoretische Beschreibung des Systems 4.4.3. Magnetische Rasterkraftmikroskopie-Messungen 5. Zusammenfassung und Ausblick Angang A A.1. Koordinatentransformation des piezoelektrischen Tensors A.2. Bestimmung der Polarisationsrichtung aus der Verzerrung Literaturverzeichnis Eigene Publikationen A.3. Vorträge A.4. Poster A.5. Veröffentlichungen Danksagung

Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity in hafnium oxide solved this issue. Ferroelectric memories in three variants, capacitor based ferroelectric RAM, ferroelectric field effect transistors and ferroelectric tunneling junctions have become competitors for future memory solutions again. In this paper, the basics and current status of hafnium oxide based ferroelectric memory devices is described and recent results are shown.

<p>  </p> <p>By means of this dissertation we bring to light that FETs (that are either Si or 2D-TMD based) when coupled with piezoelectric or ferroelectric materials can offer attractive solutions such as (i) technology scaling, (ii) non-volatile memory functionality and (iii) beyond-von-Neumann computing paradigms that address the limitations of current architectures. Our efforts encompass the domains of steep switching devices, non-volatile memories, computation-in-memory and non-Boolean computing, wherein we explore devices embedded with piezoelectric (strain-based) and ferroelectric (polarization-based) properties and propose novel circuits based on them, while focusing on understanding their device-circuit interactions and system implications.</p>

The generation and application of human stem-cell-derived functional neural circuits promises novel insights into neurodegenerative diseases. These networks are often studied using stem-cell derived random neural networks in vitro, with electrical stimulation and recording using multielectrode arrays. However, the impulse response function of networks is best obtained with spatiotemporally well-defined stimuli, which electrical stimulation does not provide. Optogenetics allows for the functional control of genetically altered cells with light stimuli at high spatiotemporal resolution. Current optogenetic investigations of neural networks are often conducted using full field illumination, potentially masking important functional information. This can be avoided using holographically shaped illumination. In this article, we present a digital holographic illumination setup with a spatial resolution of about 8 µm, which suffices for the stimulation of single neurons, and offers a temporal resolution of less than 0.6 ms. With this setup, we present preliminary single-cell stimulation recording of stem-cell derived induced human neurons in a random neural network. This will offer the opportunity for further studies on connectivity in such networks.