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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
501

Power converters with normally-on SiC JFETs

Guédon, Florent Dominique January 2012 (has links)
No description available.
502

Studies of MISiC-FET sensors for car exhaust gas monitoring

Wingbrant, Helena January 2005 (has links)
The increasing size of the car fleet makes it important to find ways of lowering the amounts of pollutants from each individual diesel or gasoline engine to almost zero levels. The pollutants from these engines predominantly originate from emissions at cold start, in the case when gasoline is utilized, and high NOx emissions and particulates from diesel engines. The cold start emissions from gasoline vehicles are primarily due to a high light-off time for the catalytic converter. Another reason is the inability to quickly heat the sensor used for controlling the air-to-fuel ratio in the exhausts, also called the lambda value, which is required to be in a particular range for the catalytic converter to work properly. This problem may be solved utilizing another, more robust sensor for this purpose. One way of treating the high NOx levels from diesel engines is to introduce ammonia in the exhausts and let it react with the NOx in a special catalytic converter to form nitrogen gas and water, which is called SCR (selective catalytic reduction). However, in order to make this system reduce NOx efficiently enough for meeting future legislations, closed loop control is required. To realize this type of system an NOx or ammonia sensor is needed. This thesis presents the efforts made to test the SiC-based field effect sensor device both as a cold start lambda sensor for gasoline engines and as an NH3 sensor for SCR systems in diesel engines. The MISiC (metal insulator silicon carbide) lambda sensor has proven to be both sensitive and selective to lambda, and its properties have been studied in lambda stairs both in gasoline engine exhausts and in the laboratory. There is, however, a small cross-sensitivity to CO. The influence of metal gate restructuring on the linearity of the sensor has also been investigated. The metal tends to form islands by time, which decreases the catalytic activity and thereby gives the sensor, which is binary when fresh, a linear behavior. Successful attempts to prevent the restructuring through depositing a protective layer of insulator on top of the metal were made. The influence of increasing the catalytic activity in the measurement cell was also studied. It was concluded that the location of the binary switch point of MISiC lambda sensors could be moved towards the stoichiometric value if the consumption of gases in the measurement cell was increased. The MISiC NH3 sensor for SCR systems has been shown to be highly sensitive to ammonia both in laboratory and diesel engine measurements. The influence of other diesel exhaust gas components, such as NOx, water or N2O has been found to be low. In order to make the ammonia sensor more long-term stable experiments on samples with different types of co-sputtered Pt or Ir/SiO2 gas-sensitive layers were performed. These samples turned out to be sensitive to NH3 even though they were dense and NH3 detection normally requires porous films. The speed of response for both sensor types has been found to be fast enough for closed loop control in each application. / On the day of the ublic defence of the doctoral thesis, the status of article IV was: accepted, article V was: submitted and article VII was: manuscript.
503

Intrinsic and extrinsic parameter fluctuation limits on gigascale integration (GSI)

Tang, Xinghai 08 1900 (has links)
No description available.
504

Fabricating designed fullerene nanostructures for functional electronic devices

Larsen, Christian January 2014 (has links)
A long-term goal within the field of organic electronics has been to developflexible and functional devices, which can be processed and patterned withlow-cost and energy-efficient solution-based methods. This thesis presents anumber of functional paths towards the attainment of this goal via thedevelopment and demonstration of novel fabrication and patterningmethods involving the important organic-semiconductor family termedfullerenes.Fullerenes are soccer-shaped small molecules, with two often-employedexamples being the symmetric C60 molecule and its more soluble derivative[6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We show that PCBM canbe photochemically transformed into a dimeric state in a bi-excited reactionprocess, and that the exposed material features a significantly reducedsolubility in common solvents as well as an effectively retained electronmobility. This attractive combination of material properties allows for adirect and resist-free lithographic patterning of electronic PCBM films downto a smallest feature size of 1 µm, using a simple and scalable two-stepprocess constituting light exposure and solution development. In a furtherdevelopment, it was shown that the two-step method was useful also in thearea-selective transformation of fullerene/conjugated-polymer blend films,as demonstrated through the realization of a functional complementary logiccircuit comprising a 5-stage ring oscillator.In another project, we have synthesized highly flexible, single-crystal C60nanorods with a solution-based self-assembly process termed liquid-liquidinterfacial precipitation. The 1-dimensional nanorods can be deposited fromtheir synthesis solution and employed as the active material in field-effecttransistor devices. Here, it was revealed that the as-fabricated nanorods canfeature an impressive electron mobility of 1.0 cm2 V-1 s-1, which is on par withthe performance of a work horse in the transistor field, viz. vacuumdeposited amorphous Si. We further demonstrated that the processability ofthe nanorods can be improved by a tuned light-exposure treatment, duringwhich the nanorod shell is polymerized while the high-mobility interior bulkis left intact. This has the desired consequence that stabile nanoroddispersions can be prepared in a wide range of solvents, and we anticipatethat functional electronic devices based on solution-processable nanorodscan be realized in a near future.
505

Metrology of gan electronics using micro-raman spectroscopy

Beechem, Thomas E., III 17 November 2008 (has links)
Possessing a wide band gap and large break down field, gallium nitride (GaN) is of interest for a host of high power, high frequency applications including next generation cellular base stations, advanced military radar, and WiMAX networks. Much of this interest stems from the continued development of the AlGaN/GaN high electron mobility transistor (HEMT) that is capable of operating at sizable power densities and switching speeds. The same fields responsible for this performance, however, also elicit acute device heating and elastic loads. These induced thermomechanical loads limit both performance and reliability thus necessitating continued improvement in the management and characterization of the coupled environments. In response, this study establishes a new implementation of Raman spectroscopy capable of simultaneously measuring the operational temperature and stress in a HEMT using only the Stokes response. First, the linewidth (FWHM) of the Stokes signal is utilized to quantify the operating temperature of a HEMT independent to the influences of stress. Second, a new method, incorporating the use of the linewidth and peak position in tandem, is developed to estimate the biaxial thermoelastic stress that arises during device operation. With this capability, the HEMT's resultant load is assessed, highlighting the large role of the residual stress on the total mechanical state of the device. Subsequently, this same linewidth is leveraged to identify the distinct effect that electrical carriers have on the thermally relevant decay of longitudinal optical phonon modes. Further investigation of the lattice transport then concludes the study by way of an analytical treatment describing the significant influence of interfacial disorder on the energy transport at GaN/substrate boundaries.
506

Distortion analysis of CMOS analog integrated circuits operating in the moderate inversion region and implications for RF applications /

Toole, William January 1900 (has links)
Thesis (Ph. D.)--Carleton University, 2004. / Includes bibliographical references (p. 217-223). Also available in electronic format on the Internet.
507

Design and optizimation of fast adder circuits using mixed CMOS logic styles /

Wan, Yuanzhong, January 1900 (has links)
Thesis (M. App. Sc.)--Carleton University, 2004. / Includes bibliographical references (p. 95-98). Also available in electronic format on the Internet.
508

Iterative decoding in analog VLSI /

Hemati, Saied, January 1900 (has links)
Thesis (Ph.D.) - Carleton University, 2005. / Includes bibliographical references (p. 182-193). Also available in electronic format on the Internet.
509

The study of single phase diode rectifiers with high power factor and low total harmonic distortion

Tella, Pranavi Chowdari. Islam, Naz E. January 2008 (has links)
The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Title from PDF of title page (University of Missouri--Columbia, viewed on October 6, 2009). Thesis advisor: Dr. Naz E. Islam. Includes bibliographical references.
510

Ultra low power analog to digital converter for biomedical applications /

Abdelhalim, Karim, January 1900 (has links)
Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 143-145). Also available in electronic format on the Internet.

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