To better understand the physical and electronic properties of donor and acceptor-based structures used in organic electronic applications, a variety of oligothiophene and naphthalene diimide-based small conjugated molecules were designed, synthesized, and characterized. The materials were initially synthesized using oxidative copper-chloride coupling reactions, palladium-catalyzed amination reactions, Friedal-Crafts acylations, Negishi coupling reactions, and Stille coupling reactions. Once isolated, the physical properties of the compounds were characterized through a combination of X-ray crystal structure, thermogravimetric analysis, differential scanning calorimetry, UV-vis. absorption spectroscopy, cyclic voltammetry, and differential pulse voltammetry, along with comparison to quantum-chemical calculations. In some cases, the radical cations or radical anions were generated by chemical oxidation and analyzed by vis-NIR spectroscopy. Furthermore, the electronic properties of the materials were investigated through incorporation as solution-processed active layers in organic field-effect transistors. Multiple examples exhibited hole- and / or electron-transport properties with electron mobility values of up to 1.5 cm²V⁻¹s⁻¹, which is among the highest yet reported for an n-channel OFET based on a solution-processed small molecule.

GaN-based HEMTs are among the most promising candidates for high-power and high-frequency applications; a niche for millimeter-wave technologies. Nitride materials indeed outperform other mainstream III-V materials (InP or GaAs) because of several properties, including wider bandgaps, high peak and saturation velocities, large breakdown voltages, together with good thermal conductivities. Nonetheless, the state-of-the-art of nitrides is not yet industrially mature to exploit the entire millimeter-wave range. A way to push further performance is to develop innovative designs, notably by exploring novel materials. The purpose of this research was therefore to investigate the use of boron-containing III-nitrides in high electron mobility transistors (HEMTs). The study was first conducted theoretically, through solving the Schrodinger-Poisson equation. Key parameters and relevant equations were derived to implement BGaN materials in our simulations. A GaN/ultrathin-BGaN/GaN heterojunction was showed to provide an electrostatic barrier to electrons and to improve the confinement of the two-dimensional electron gas. GaN back-barrier layers happen to limit leakage in the GaN buffer thanks to two effects: (i) a polarization-induced band discontinuity and (ii) a resistive barrier originating from excellent insulation properties of BGaN. The study was then, experimentally, several growth campaigns were carried out that led to the fabrication of devices. First, we confirmed the key characteristics of BGaN materials by electrical and optical measurements. Second, we demonstrated the evidence of a significant enhancement of performance of standard AlGaN/GaN structures by the introduction of a BGaN layer in the buffer layer. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barriers showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are major devices inintegrated circuit, extensively used in various electronic products. In order to improve the electrical characteristics, scaling channel width and length, using high-£e gate dielectric insulator, and strained silicon may be utilized to increase the driving current and circuit speed. Nevertheless, the scaling of the channel width and length must overcome the limitation of the photolithographytechnology and cost. Once the method is employed, the MOSFETs will face a serious short-channel effect and gate leakage current. In the aspect of high-£e gate dielectric insulator, there still have problems, containing the trap states, phonon scattering, dipole-induced threshold voltage variation, needed to be solved. This dissertation focuses on the properties of MOSFETs experienced an external-mechanical strain, where the channel will be strained. Hence, the mobility, driving current, and circuit speed will increase. Our research can be divided into three topics: fabricating process-induced strained Si, external mechanical stress-induced strained Si, and the properties of strained Si MOSFETs at different temperatures. Except the electrical measurement, we also used the ISE-TCAD to simulate the electrical characteristic of MOSFETs under stress. Firstly, we apply the stress on n-MOSFETs by utilizing the nitride-capping layer. Once the lattice is strained, the mobility will increase, hence resulting in the operating speed. Secondly, the electrical characteristics under external stress is explored by introduced the external mechanical stress along the channel length of nMOSFETs. In addition to the fabricating process-induced strain, the fabricating process condition will also influence the device characteristics. As a result, we propose a new strain technology for our following research. Thirdly, the device performance of strained Si under different temperatures is investigated. Finally, we discuss the gate leakage current in strained Si depending on the ultra-thin gate oxide layer.

One of the aim of this study is to prepare conductive polymer nanocomposites of polypropylene to obtain better mechanical and electrical properties. Composite materials based on conductive fillers dispersed within insulating thermoplastic matrices have wide range of application. For this purpose, conductive polymer nanocomposites of polypropylene with nano dimentional conductive fillers like carbon black, carbon nanotube and fullerene were prepared. Their mechanical, electrical and thermal properties were investigated. Polypropylene (PP)/carbon black (CB) composites at different compositions were prepared via melt blending of PP with CB. The effect of CB content on mechanical and electrical properties was studied. Test samples were prepared by injection molding and compression molding techniques. Also, the effect of processing type on mechanical and electrical properties was investigated. Composites become semiconductive with the addition of 2 wt% CB. Polypropylene (PP) / Carbon Nanotube (CNT) and Polypropylene / Fullerene composites were prepared by melt mixing. CNT&rsquo / s and fullerenes were surface functionalized with HNO3 : H2SO4 before composite preparation. The CNT and fullerene content in the composites were varied as 0.5, 1.0, 2.0 and 3.0 % by weight. For the composites which contain surface modified CNT and fullerene four different compatibilizers were used. These were selected as TritonX-100, Poly(ethylene-block-polyethylene glycol), Maleic anhydride grafted Polypropylene and Cetramium Bromide. The effect of surface functionalization and different compatibilizer on mechanical, thermal and electrical properties were investigated. Best value of these properties were observed for the composites which were prepared with maleic anhydride grafted polypropylene and cetramium bromide. Another aim of this study is to built and characterize transistors which have polyethylene as dielectric layers. While doing this, polyethylene layer was deposited on gate electrode using vacuum evaporation system. Fullerene , Pentacene ve Indigo were used as semiconductor layer. Transistors work with low voltage and high on/off ratio were built with Aluminum oxide - PE and PE dielectrics.

Conjugated polymers and oligomers are great materials for use in the next generation devices namely organic field effect transistors, light emitting diodes and polymeric solar cells. Apart from having the potential for developing power-efficient, flexible, robust and inexpensive devices, conjugated polymers can also be tuned by molecular design to optimize device characteristics. One key problem for the full commercial exploitation of conjugated polymers is that the charge carrier mobility of the state-of-the-art polymer semiconductors is much lower than required for many applications. The performance of the devices is strongly dependent on the molecular structure and supermolecular assembly of the conjugated polymer chains. This thesis covers our attempts to design molecular structure to control and improve the solid state properties of conjugated polymers. The relative placement of side chains along the backbone has a great influence on the solid state ordering of conjugated polymers. Poly(2,5-disubstituted-1,4-phenylene ethynylene)s (PPE)s, an important class of conjugated polymers, are generally synthesized by Pd-catalyzed coupling polymerizations of appropriately substituted diiodo and diethynyl benzenes (i.e., A-A and B-B type monomers). In asymmetrically substituted PPEs, this results in an irregular substitution pattern of the side chains along the polymer backbone. We report a new synthetic approach to prepare regioregular unsymmetrically substituted PPEs by polymerization of 4-iodophenylacetylenes (i.e., A-B type monomer). We provide a detailed discussion of various approaches to the synthesis of PPEs with different regioregularities and provide a description of the differences between regioregular and regiorandom analogs. The effect of regioregularity becomes even more important when the two side chains are very dissimilar or amphiphilic. We explore the effect of relative placement hydrophobic (dodecyloxy) / hydrophilic (tri(ethylene glycol) and hydrophobic (dodecyloxy)/fluorophilic (fluoroalkyl) side chains along the poly(1,4-phenylene ethynylene) backbone. We found that the regioregular substitution of the polymer backbone provides a structure in which the side chains segregate to afford a Janus-type structure. The regioregular polymer chains pack more densely in a monolayer at the air-water interface, and pack into a bilayer in the solid state to form a highly crystalline material. Pentacenes are very important organic molecules for use as semiconductor in oFETs due to their low band gap and high field effect mobility. One approach to reduce the bandgap of a polymeric system and improve performance is to include low bandgap small molecules into the conjugated backbone. A new copolymer system consisting of pentacene and terthiophene was developed and its optical and electronic properties along with its stability were evaluated. We report the use of ultrasonication of P3HT as a novel operationally-simple process to significantly improve the field effect mobility of P3HT-based FETs, thereby potentially eliminating the need for dielectric surface modifications or further processing of the device. Investigation of the sonicated polymer samples by number of characterization techniques indicates that ultrasonication leads to aggregation and ordering of the P3HT chains resulting in increase in the mobility.

Conjugated polymers comprise some of the most promising materials for new technologies such as organic field effect transistors, solar light harvesting technology and sensing devices. In spite of tremendous research initiatives in materials chemistry, the potential to optimize device performance and develop new technologies is remarkable. Understanding relationships between the structure of conjugated polymers and their electronic properties is critical to improving device performance. The design and synthesis of new materials which self-organize into ordered nanostructures creates opportunities to establish relationships between electronic properties and morphology or molecular packing. This thesis details our progress in the development of synthetic routes which provide access to new classes of conjugated polymers that contain dissimilar side chains that segregate or dissimilar conjugated blocks which phase separate, and summarizes our initial attempts to characterize these materials. Poly(1,4-phenylene ethynylene)s (PPEs) have been used in a variety of organic electronic applications, most notably as fluorescent sensors. Using traditional synthetic methods, asymmetrically disubstituted PPEs have irregular placement of side chains on the conjugated backbone. Herein, we establish the first synthetic route to an asymmetrically substituted regioregular PPEs. The initial PPEs in this study have different lengths of alkoxy side chains, and both regioregular and regiorandom analogs are synthesized and characterized for comparison. The design of amphiphilic structures provides additional opportunities for side chains to influence the molecular packing and electronic properties of conjugated polymers. A new class of regioregular, amphiphilic PPEs has been prepared bearing alkoxy and semifluoroalkoxy side chains, which have a tendency to phase separate. Fully conjugated block copolymers can provide access to interesting new morphologies as a result of phase separation of the conjugated blocks. In particular, donor-acceptor block copolymers that phase separate into electron rich and electron poor domains may be advantageous in organic electronic devices such as bulk heterojunction solar cells, of which the performance relies on precise control of the interface between electron donating and accepting materials. The availability of donor-acceptor block copolymers is limited, largely due to the challenges associated with synthesizing these materials. In this thesis, two new synthetic routes to donor-acceptor block copolymers are established. These methods both utilize the catalyst transfer condensation polymerization, which proceeds by a chain growth mechanism. The first example entails the synthesis of a monofunctionalized, telechelic poly(3-alkylthiophene) which can be coupled to electron accepting polymers in a subsequent reaction. The other method describes the first example of a one-pot synthesis of a donor-acceptor diblock copolymer. The methods of synthesis are described, and characterization of the block copolymers is reported.

<p>The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. </p><p>The DC and RF performance of 4H-SiC RF Power MESFETs have been studied through two-dimensional electro-thermal simulations using commercial software MEDICI and ISE. The simulated characteristics of the transistors were compared with the measurement results. Performance degradation of transistors under self-heating and high operating temperatures have been analyzed in terms of gate and drain characteristics, power density, high frequency current gain and power gain. 3D thermal simulations have been performed for single and multi-finger MESFETs and the simulated junction temperatures and temperature profiles were compared with the results from electro-thermal simulations. The reduction in drain current caused by self-heating was found to be more prominent for transistors with more fingers and it imposes a limitation on both the output power and the power density (in W/mm) of multi-fingered large area devices. Thermal issues for design of high power multi-fingered SiC MESFETs were also investigated. A couple of useful ways to reduce the self-heating effects were discussed. Trap-induced performance instabilities of the devices were analyzed by carrying out DC, transient, and pulse measurements at room and elevated temperatures. </p><p>Electrical characteristics of 4H-SiC BJTs have been measured. A reduction in current gain at elevated temperatures was observed. Based on the collector current-voltage diagram measured at three different ambient temperatures the junction temperature was extracted using the assumption that the current gain only depends on the temperature. Temperature measurements have been carried out for SiC BJTs. Thermal images of a device under operation were recorded using an infrared camera. 3D thermal simulations were conducted using FEMLAB. Both the simulations and the measurement showed a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease of the DC current gain. The junction temperatures obtained from the thermal imaging, simulation and extraction agree well. </p>

<p>Label-free detection of DNA has been successfully demonstrated on field effect transistor (FET) based devices. Since conducting organic materials was discovered and have attracted more and more research efforts by their profound advantages, this work will focus on utilizing an organic field effect transistor (OFET) as DNA sensor.</p><p>An OFET constructed with a transporting fluidic channel, WetOFET, forms a fluid-polymer (active layer) interface where the probe DNA can be introduced. DNA hybridization and non-hybridization after injecting target DNA and non-target DNA were monitored by transistor characteristics. The Hysteresis area of transfer curve increased after DNA hybridization which may be caused by the increasing electrostatic screening induced by the increasing negative charge from target DNA. The different morphology of coating surface could also influence the OFET response.</p>

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.

In this thesis, we investigate spin-dependent transport through ferromagnet-contacted single-walled carbon nanotubes (SWCNTs), in which charge transport shows the Fabry-Perot (FP) interference effect, the Kondo effect and the Coulomb blockade effect at low temperatures. Hysteric magnetoresistance (MR) is observed in all three transport regimes, which can be controlled by both the external magnetic field and the gate voltage. The MR in the FP interference regime can be well understood by a model considering the intrinsic electronic structure of SWCNTs and the quantum interference effect. In the strongly interacting Kondo regime, the Kondo effect is not suppressed by the presence of nearby ferromagnetism. Several observed MR features including the non-splitted zero-bias Kondo peak and positive MR switching can be explained by the strong Kondo effect and weak ferromagnetism in the leads. In the Coulomb blockade regime, several effects that can be associated with the magneto-Coulomb effect have been observed, and isolated spin accumulation and transport through the SWCNT quantum dot have been realized by a four-probe non-local measurements. We also studied charge transport behavior through organic semiconductor pentacene thin film transistors (OTFTs) in the limit of single- or a few molecular layers of pentacene films. The charge transport in these devices can be well explained by the multiple trapping and release model. The structural disorders induced by the physical and chemical causes, such as grain boundaries, interactions with gate insulator, metal contacts and ambient conditions can be responsible for the localized trap states in the ultrathin layer OTFTs, which are further confirmed by the electric force microscopy (EFM) measurements. / text