The cone-beam flat panel micro-CT is a high definition imaging system. It acquires projections of an object or animal to reconstruct a 3D image of its internal structure. The device is basically composed by a radiation tube and a detector panel, which are fixed to a gantry that rotates all around the test subject. The micro-CT system is affected by several imperfections and problems, that might lead to serious artifacts that deteriorate the quality of the reconstructed image. In particular, two issues have been discussed in the present work: the source-panel geometric misalignment and the detector lag effect. The first problem concerns the consequences of systems where the different elements are not perfectly aligned to each other. The second issue regards the residual signal, left in the detector's sensor after a projection acquisition, which affects the following frames with ghost images. Both these arguments have been investigated to describe their characteristics and behaviour in a typical acquisition protocol. Then two correction methods have been presented and tested on a real micro-CT device to verify their effectiveness in the artifacts compensation. In the end, a comparison between images before and after the corrections is provided and future prospects are discussed.

The objective of the proposed research is to design, implement, and characterize low-cost, lightweight front-end components and subsystems in the microwave domain through innovative packaging architectures for remote sensing applications. Particular emphasis is placed on system-on-package (SoP) solutions implemented in organic substrates as a low-cost alternative to conventional, expensive, rigid, and fragile radio- frequency substrates. To this end, the dielectric properties of organic substrates RT/duroid 5880, 6002 and 6202 are presented from 30 GHz to 70 GHz, covering most of the Ka and V radar bands, giving also a thorough insight on the uncertainty of the microstrip ring resonator method by means of the Monte Carlo uncertainty analysis. Additionally, an ultra-thin, high-power antenna-array technology, with transmit/ receive (T/R) functionality is introduced for mobile applications in the X band. Two lightweight SoP T/R array panels are presented in this work using novel technologies such as Silicon Germanium integrated circuits and microelectromechanical system switches on a hybrid organic package of liquid crystal polymer and RT/duroid 5880LZ. A maximum power of 47 dBm is achieved in a package with a thickness of 1.8 mm without the need of bulky thermal management devices. Finally, to address the thermal limitations of thin-film substrates of interest (liquid crystal polymer, RT/duroid 6002, alumina and Aluminum Nitride), a thermal assessment of microstrip structures is presented in the X band, along with the thermal characterization of the dielectric properties of RT/duroid 6002 from 20 ºC to 200 ºC and from 30 GHz to 70 GHz. Additional high-power, X-band technologies presented in this work include: a novel and compact topology for evanescent mode filters, and low-profile Wilkinson power dividers implemented on Aluminum Nitride using Tantalum Nitride thin-film resistors.

The innovative design of flat panel volume computed tomography (CT) systems has recently led to the emergence of a wide spectrum of new applications for both diagnostic and interventional purposes, such as ultra-high resolution bone imaging, image guided interventions, dynamic CT angiography, and interventional neuroradiology. Most of these applications require low X-ray dose to limit potential harm to the patient. One of the main challenges of low dose imaging is to maintain a quantum noise limited system to achieve the highest possible signal to noise ratio (SNR) at a given dose. One potential method to achieve a quantum noise limited system is to employ a high gain detector. Current flat panel CT technology is based on indirect conversion detectors that contain a scintillator and hydrogenated amorphous silicon (a-Si:H) p-i-n photodetectors which have a gain below unity and require a specialized p-layer. In this thesis, an alternative detector to the p-i-n photodetector, which can achieve gain above unity and thus aid in achieving quantum noise limited systems is investigated for large area flat panel imaging. The proposed detector is based on amorphous selenium (a-Se). Amorphous selenium is the most highly developed photoconductor for large area direct conversion X-ray imaging and is still the only commercially available large area direct conversion flat panel X-ray detector. However, the use of a-Se for indirect conversion imaging has not been significantly explored. Amorphous selenium has field dependent mobility and conversion efficiency, which increase with increasing electric field. It is also the only large area compatible avalanche-capable material; a property that was discovered more than 30 years ago. This unique property could be leveraged to provide the gain necessary for low dose medical imaging applications. The only current commercial avalanche capable a-Se optical detector uses electron beam readout in vacuum, which is not large area compatible and makes integration with pixelated readout electronics challenging. The detector structure proposed in this research seeks to address the challenges associated with integration of an avalanche capable a-Se detector with large area X-ray imager. One important aspect in the development of a-Se avalanche detectors is reducing the dark current and preventing a-Se breakdown as the electric field across the device is increased. A high dark current reduces the dynamic range of the detector, it increases the noise level, and it can lead to crystallization of the detector due to joule heating. To overcome the dark current problem, different blocking layers that allow for integration with large area flat panel imagers were investigated. Experimental results from fabricated devices provided the basis for the choice of the most suitable blocking layer. Two device structures are proposed using the selected blocking layer, a vertical structure and a lateral structure, each having associated benefits and drawbacks. It was shown that introducing a polyimide blocking layer brought down the dark current more than four orders of magnitude at high electric fields and does not deteriorate the charge transport properties of the detectors. The polyimide blocking layer also greatly minimizes physical stress related crystallization in a-Se improving reliability. Gain above unity was observed in the vertical structure and the initiation of impact ionization was verified by performing time-of-flight experiments. Although impact ionization was not verified in the lateral structure, this device structure was found to be highly sensitive to ultraviolet light due to the absence of a top contact layer. Devices were fabricated on several different substrates, including a CMOS substrate, to demonstrate their integration compatibility with large area readout electronics. The exhibited performance of the vertical device structure demonstrates that it is a suitable alternative to the p-i-n photodetector for low dose imaging applications.

本文檢視了包含半導體、面板、發電太陽能、及發光二極體等四種在最近十五年來高科技電子設備產業於日本、韓國、中國、新加坡、馬來西亞、與印度等亞洲國家中發展的情況。文中包含針對不同高科技電子設備產業的高研發成本、高資本密集、涉及國防及國土安全的高敏感性、及以設備搭售服務的商業模式等特性，在面對亞洲國家在文化、制度、及經濟上類似但卻又不完全相同的環境時，跨國高科技電子設備商所採取因應策略的探討。 / This thesis reviews the development of four targeted high-tech equipment industries of Semiconductor, Flat Panel Display, Photovoltaic (PV) Solar, and Light Emitting Diode (LED) in Asia countries including Japan, South Korea, China, Singapore, Malaysia, and India. Business and operational strategies from individual high-tech equipment industries characterized of high R&D cost, high capital investment, trade sensitive requirement, and equipment bundling service business strategy dealing with similar but not identical cultural, institutional, and economic environment of targeted Asia countries were also reviewed.

<p>  </p> <p>Polymer films possess many advantageous properties, such as mechanical flexibility, toughness, impact resistance, optical transparency, light weight, and low cost, but their behavior related to temperature stability and thermal conductivity and lack of select functionalities render them unsuitable for key applications. In the context of smart materials, piezoelectric ceramics and single crystals provide unmatched electromechanical couplings, mechanical strength, and chemical inertness, at the expense of being brittle, opaque, and high cost. A synergistic combination of properties can be achieved by combining both materials in an anisotropically structured ceramic/polymer composite (with quasi-1–3 connectivity) by the application of external electric field (E-field). In a process called dielectrophoresis, the particles align into through-thickness columns comprising a nanocolumn forest. As a result, the complementary properties greatly enhance the resulting performance, promising to revolutionize the class of smart materials with high-performance applications in actuators, sensors, and transducers. These particle-filled composites also allow for great design flexibility regarding the type of functionalization and the connectivity of each phase. Following the materials-science paradigm comprising the sequence of processing, structure, and properties, the work on these piezoelectric composite materials is broadly organized into materials selection, processing, and applications.</p> <p>In the first study, the kinetics of particle-chain alignment are modeled as a linear step-growth polymerization and the rheokinetics are modeled with the dual-Arrhenius chemoviscosity model. Employing the direct piezoelectric effect, a characterization of the vibration response of the composites complements an evaluation of their suitability as vibration sensor for motor fault detection. Second, for impact sensing, the efficacy of the piezoelectric composite films is evaluated with respect to a novel conceptual sensing system for automotive applications, such as vehicle-to-pedestrian collision detection. Third, applying the indirect piezoelectric effect for sound production as an electroacoustic loudspeaker, the piezoelectric composite films represent a novel approach to flat-panel loudspeakers that are tunable in modulus, with opportunities for mechanical flexibility, optical transparency, and large-area coverage.</p>

In einer initialen Studie verglichen wir das XQi Revolution, welches auf indirektem CsI (Cäsium Iodit) /a: Si (amorphes Silizium) basiert mit einem direkten Digitalröntgengerät a: SE (amorphes Selen) an einem CDRAD-Phantom bei vier unterschiedlichen Eintrittsdosen und an einem TRG-Phantom bei zwei unterschiedlichen Eintrittsdosen. Mittels des berechneten Bildqualitätsfaktors des CDRAD-Phantoms konnten wir zeigen, daß das indirekte im Vergleich zum direkten System bei niedrigeren Dosen eine bessere Detailerkennungsrate aufweist. Ein positiver Trend läßt sich auch beim TRG-Phantom darstellen. In einer weiteren Studie untersuchten wir anhand von Patientenbildern die Bildqualität des Dual Energy Systems bei zwei unterschiedlichen Dosisniveaus, der Standarddosis sowie einer doppelten Dosis, was einem Speed-Äquivalent von 400/1000 bzw. 200/500 entspricht. Bei hoher Dosis konnten wir eine signifikante Reduktion des Rauschens im Knochen- und Weichteilbild feststellen, gleichzeitig nahmen die Störungen durch Bewegungsartefakte signifikant zu. Im Anschluß verglichen wir die Erkennbarkeit verkalkter Lungenpathologien im Standard P/A Bild mit zusätzlichem Einsatz von Dual Energy. Als Goldstandard erfolgte der sichere Nachweis der Pathologien im CT. Bei zusätzlichem Einsatz von Dual Energy konnten wir eine signifikante Steigerung der Sensitivität erkennen. Dieses Ergebnis wurde durch den Qualitätsfaktor, der die Bildeigenschaften kumulativ beschreibt, bestätigt. Weiterhin untersuchten wir analog die Erkennbarkeit von nichtverkalkten Lungenrundherden. Auch bei diesen Pathologien ließ sich ein positiver Trend der Sensitivität und Spezifität bei zusätzlichem Einsatz von Dual Energy erkennen. Zusätzlich stieg die durchschnittliche Entscheidungssicherheit der Gutachter signifikant an. Damit bietet die Dual Energy Subtraktionstechnik eine wertvolle Ergänzung in der Diagnostik verkalkter und nichtverkalkter Lungenpathologien eine wertvolle Ergänzung zum Standardröntgen. / First study assess and quantify the image quality at two dose levels for an amorphous Silicon (a:Si) Cesium Iodide (CsI) flat panel system compared with a direct amorphous Selenium (a:Se) digital radiography system. Image quality of a:Si flat panel digital radiography proved to be superior to a:Se drum digital radiography using low-dose settings. Second study assess the image quality of subtracted soft tissue and bone images of a CsIdetector-based dual-energy system for chest radiography at varying dose levels. Radiation dose did not significantly influence the perception of dual-energy image quality. Next study assess the value of dual-energy chest radiography obtained using a cesium iodide flat-panel detector in addition to standard posteroanterior chest radiography for the detection of calcified chest abnormalities. When dual-energy images were added, sensitivity increased significantly. Brunner and Langer’s test revealed a highly significant difference between posteroanterior chest radiography and dual-energy imaging in the detection of calcified chest abnormalities. Dual-energy images added to standard posteroanterior chest radiographs significantly improve the detection of calcified chest lesions. Last study compare the sensitivity and specificity of digital chest radiography alone with digital chest radiography combined with dual-energy chest radiography in the detection of small non-calcified pulmonary nodules. Standard and dual-energy radiographs were obtained with a flat-panel digital chest system. The increase of nodule detection overall as well as for different size categories was significant. The increase of the confidence level rating was also significant. Dual energy added to standard posteroanterior chest radiography significantly improves the sensitivity, specificity, and confidence in detection of small non-calcified pulmonary nodules. Dual-energy subtraction has the potential to become a future routine application in chest radiography.

The objective of the proposed research is to design, implement, and characterize low-cost, lightweight front-end components and subsystems in the microwave domain through innovative packaging architectures for remote sensing applications. Particular emphasis is placed on system-on-package (SoP) solutions implemented in organic substrates as a low-cost alternative to conventional, expensive, rigid, and fragile radio- frequency substrates. To this end, the dielectric properties of organic substrates RT/duroid 5880, 6002 and 6202 are presented from 30 GHz to 70 GHz, covering most of the Ka and V radar bands, giving also a thorough insight on the uncertainty of the microstrip ring resonator method by means of the Monte Carlo uncertainty analysis. Additionally, an ultra-thin, high-power antenna-array technology, with transmit/ receive (T/R) functionality is introduced for mobile applications in the X band. Two lightweight SoP T/R array panels are presented in this work using novel technologies such as Silicon Germanium integrated circuits and microelectromechanical system switches on a hybrid organic package of liquid crystal polymer and RT/duroid 5880LZ. A maximum power of 47 dBm is achieved in a package with a thickness of 1.8 mm without the need of bulky thermal management devices. Finally, to address the thermal limitations of thin-film substrates of interest (liquid crystal polymer, RT/duroid 6002, alumina and Aluminum Nitride), a thermal assessment of microstrip structures is presented in the X band, along with the thermal characterization of the dielectric properties of RT/duroid 6002 from 20 C to 200 C and from 30 GHz to 70 GHz. Additional high-power, X-band technologies presented in this work include: a novel and compact topology for evanescent mode filters, and low-profile Wilkinson power dividers implemented on Aluminum Nitride using Tantalum Nitride thin-film resistors.

Τα παραγόμενα πρωτογενή ηλεκτρόνια εντός του φωτοαγώγιμου υλικού ενός μαστογραφικού ανιχνευτή ενεργού μήτρας άμεσης μετατροπής κατά την ακτινοβόληση, αποτελούν το πρωτογενές σήμα το οποίο προχωρώντας σχηματίζει το τελικό σήμα (εικόνα). Έτσι, η ποιότητα της μαστογραφικής εικόνας εξαρτάται άμεσα από τα χαρακτηριστικά των πρωτογενών ηλεκτρονίων. Ερευνώνται οι διαδικασίες σχηματισμού του πρωτογενούς σήματος και τα χαρακτηριστικά των πρωτογενών ηλεκτρονίων σε κατάλληλα φωτοαγώγιμα υλικά, όπως τα a-Se, a-As2Se3, GaSe, GaAs, Ge, CdTe, CdZnTe, Cd0.8Zn0.2Te, ZnTe, PbO, TlBr, PbI2 και HgI2, με την ανάπτυξη μοντέλου προσομοίωσης με τεχνικές Monte Carlo της παραγωγής των πρωτογενών ηλεκτρονίων για διάφορα φάσματα ακτίνων Χ στο μαστογραφικό εύρος ενεργειών. Το μοντέλο προσομοιώνει την αλληλεπίδραση φωτονίων-ύλης και την ατομική αποδιέγερση. Επιπρόσθετα, ειδικότερα για το a-Se, πραγματοποιείται μία προκαταρτική μελέτη της συσχέτισης των χαρακτηριστικών αρχικού και τελικού σήματος, με επίλυση των εξισώσεων του Νεύτωνα για την ολίσθηση των πρωτογενών ηλεκτρονίων στο κενό υπό την επίδραση ενός απλού ηλεκτρικού πεδίου. Για το ίδιο υλικό, αναπτύσσεται αφενός μεν αλγόριθμος υπολογισμού της κατανομής του ηλεκτρικού δυναμικού εντός του ανιχνευτή με χρήση υπάρχουσας αναλυτικής λύσης αφετέρου δε ένα πρωταρχικό μοντέλο Monte Carlo για τις ηλεκτρονιακές αλληλεπιδράσεις. Τα σημαντικότερα ευρήματα είναι: (i) το ποσοστό των πρωτογενών ηλεκτρονίων που εκπέμπονται εμπρόσθια είναι περίπου 60 % με την πιθανότερη πολική γωνία εκπομπής μεταξύ 50ο και 70ο, (ii) τα ηλεκτρόνια εκπέμπονται σε δύο λοβούς γύρω από τις αζιμουθιακές γωνίες φ=0 και π, (iii) περίπου το 80 % των πρωτογενών ηλεκτρονίων παράγεται στο σημείο πρόσπτωσης των ακτίνων Χ ενώ η πλειονότητά τους παράγεται εντός των πρώτων 300 μm από την επιφάνεια του ανιχνευτή, (iv) οι χωρικές κατανομές των ηλεκτρονίων στα a-Se, a-As2Se3, GaSe, GaAs, Ge, PbO και TlBr είναι σχεδόν ανεξάρτητες του μαστογραφικού φάσματος ενώ στα υπόλοιπα υλικά παρουσιάζουν φασματική εξάρτηση, (v) για το πρακτικό μαστογραφικό εύρος (15-40 keV) και στο πρωταρχικό στάδιο της δημιουργίας του σήματος τα a-Se, a-As2Se3 και Ge έχουν την ελάχιστη αζιμουθιακή ομοιομορφία κατά την εκπομπή των ηλεκτρονίων ενώ τα CdZnTe, Cd0.8Zn0.2Te και CdTe τη μέγιστη, το a-Se παρουσιάζει την καλύτερη ενδογενή χωρική διακριτική ικανότητα αλλά το μικρότερο παραγόμενο αριθμό ηλεκτρονίων, το PbO παρουσιάζει το ελάχιστο χώρο παραγωγής πρωτογενών ηλεκτρονίων (ακτίνας R=200 μm, βάθους Dmax=320 μm), ενώ το CdTe το μέγιστο (R=500 μm, Dmax=660 μm), (vi) τέλος, υπάρχουν σημαντικές ενδείξεις ότι τα PbI2 και HgI2 αποτελούν τις καλύτερες επιλογές φωτοαγώγιμου υλικού. / The x-ray induced primary electrons inside the photoconductor of direct conversion digital flat panel mammographic detectors, comprise the primary signal which propagates in the material and forms the final signal (image). Consequently, the quality of the mammographic image strongly depends on the characteristics of primary electrons. An investigation is made concerning the primary signal formation and the characteristics of primary electrons inside a-Se, a-As2Se3, GaSe, GaAs, Ge, CdTe, CdZnTe, Cd0.8Zn0.2Te, ZnTe, PbO, TlBr, PbI2 and HgI2, which are suitable photoconductors for direct detectors. A Monte Carlo model has been developed that simulates the primary electron production inside the materials mentioned for various x-ray spectra in the mammographic energy range. The model simulates the photon interactions and the atomic deexcitations. Furthermore, particularly for a-Se, a preliminary study is made concerning the correlation between the characteristics of primary and final signal, solving Newton’s equations of electron drifting in vacuum under the influence of a simple electric field. For the same material, an algorithm that calculates the electric potential distribution inside the detector from an existing analytical solution has been developed as well as a primitive Monte Carlo model for electron interactions. The most important findings are: (i) the percentage of primary electrons being forwards ejected is approximately 60 % with the most probable polar angles ranging from 50o to 70o, (ii) the electrons prefer to be emitted at two lobes around azimuthal angles φ=0 and π, (iii) approximately 80% of primary electrons are produced at the point of x-ray incidence whereas their majority is produced within the first 300 μm from detector’s surface, (iv) the electron spatial distributions for a-Se, a-As2Se3, GaSe, GaAs, Ge, PbO and TlBr are almost spectral independent while for the rest of materials there is a spectral dependence, (v) at the practical mammographic energies (15-40 keV) and at the primitive stage of signal formation a-Se, a-As2Se3 and Ge have the minimum azimuthal uniformity in electron emission whereas CdZnTe, Cd0.8Zn0.2Te and CdTe the maximum one, a-Se has the best inherent spatial resolution but the minimum number of primary electrons, PbO has the minimum bulk space in which electrons can be produced (radius R=200 μm, depth Dmax=320 μm) whereas CdTe has the maximum one (R=500 μm, Dmax=660 μm), (vi) finally, there is strong evidence indicating that PbI2 and HgI2 could be the best choices for this kind of applications.

Organic semiconductor technology has gained attention in both the sensor and display markets due to its low cost and simple fabrication techniques. The ability to fabricate organic semiconductor devices such as photodetectors and transistors on a flexible, lightweight substrate makes them less fragile and ideal candidates for portable large-area imaging applications. The use of organic semiconductor technology in large-area medical imaging can bring about a new generation of flexible and lightweight indirect X-ray imagers. These imagers are immune to mechanical shock and should be ideal for portable intraoral X-ray radiology. In order to realize these organic flexible imagers and their use in large-area medical imaging, many challenges associated with the device performance and fabrication need to be overcome. Among these challenges, one of the greatest is to improve the dark current performance of the organic semiconductor photodetectors (key for imager performance) with a high-photo to-dark current ratio. Low dark current is needed to improve the sensitivity of the imager, whereas a large photo-to-dark current ratio reduces noise in the extracted image. Numerous techniques have been reported to improve the dark current performance in vertical organic photodetector design; however, lateral photodetectors still lack research attention. This thesis presents a lateral multilayer photodetector design and a simplified technique to improve the dark current performance of lateral organic semiconductor photodetectors. Our technique allows us to apply a large bias voltage while maintaining a low dark current, high photo-to-dark current ratio, and improves detector speed; thus, the overall sensitivity of the detector is improved. We further show the integration of an organic photodetector with an organic backplane readout circuit to form a flexible large-area imager. This imager can be used for large-area digital imaging applications such as in medical radiology.