There is an increasing interest for nanomaterials in biomedical applications and in this work, nanoparticles of gadolinium oxide (Gd2O3) have been investigated as a novel contrast agent for Magnetic Resonance Imaging (MRI). Relaxation properties have been studied in aqueous solutions as well as in cell culture medium and the nanoparticles have been explored as cell labeling agents. The fluorescent properties of the particles were used to visualize the internalization in cells and doped particles were also investigated as a multimodal agent that could work as a fluorescent marker for microscopy and as a contrast enhancer for MRI. Results show that in aqueous solutions, there is a twofold increase in relaxivity for Gd2O3 compared to commercial agent Gd-DTPA. In cell culture medium as well as in cells, there is a clear T1 effect and a distinct increase in signal intensity in T1-mapped images. Fluorescent studies show that the Gd2O3 nanoparticles doped with 5% terbium have interesting fluorescent properties and that these particles could work as a multimodal contrast agent. This study shows that Gd2O3 nanoparticles possess excellent relaxation properties that are retained in more biological environments. Gd2O3 particles are suitable as a T1 contrast agent, but seem also be adequate for T2 enhancement in for instance cell labeling experiments.

This work is to study the interface properties of Gallium-Gadolinium oxide / GaAs structures. The samples we probed were produced by depositing oxide films in situ on freshly grown n type GaAs (100) surface. Three different oxides were deposited : Ga2O3, Gd2O3, and (Ga2O3-Gd2O3) oxide mixture. Structural properties of the interfaces have been investigated by X-ray photoelectron spectroscopy (XPS). Using Ar+ sputtering to remove the oxide layer step by step, we are able to observe the depth profiles of these samples. No Asenic or Asenic oxides are observed at the interfaces of these samples. The Ga(3d) of Ga2O3 / GaAs interface shows three different oxidation states, whose binding energies are 21.5eV, 21.0eV and 20.3eV, respectively. The binding energy of O (1s) core level is about at 530eV. For (Ga2O3-Gd2O3) / GaAs, Ga(3d) peaks exhibit at 21.0eV and 20.3eV. Also, two O (1s) peaks were clearly observed: one is Ga-O at 532.2eV and the other is Gd-O at 530.1eV. For the Gd2O3 / GaAs, only one Ga(3d) peak shows at 20.3eV, and the O (1s) spectra exhibit two peaks related to Ga-O at 532eV and Gd-O at 530eV, similar to the data of (Ga2O3-Gd2O3) sample. In conclusion, the Ga2O3 / GaAs interface has a Ga2O3 and two non-fully oxidized GaxOy states (i.e. Ga+1, Ga+2). The (Ga2O3-Gd2O3) layer consists two non-fully oxidized GaxOy states. For the Gd2O3 / GaAs interface, the GaxOy (Ga+1) state is formed possibly by the competitive oxidation of Ga, which diffused from the GaAs substrate, with the Gd2O3.

<p>There is an increasing interest for nanomaterials in biomedical applications and in this work, nanoparticles of gadolinium oxide (Gd₂O₃) have been investigated as a novel contrast agent for Magnetic Resonance Imaging (MRI). Relaxation properties have been studied in aqueous solutions as well as in cell culture medium and the nanoparticles have been explored as cell labeling agents. The fluorescent properties of the particles were used to visualize the internalization in cells and doped particles were also investigated as a multimodal agent that could work as a fluorescent marker for microscopy and as a contrast enhancer for MRI.</p><p>Results show that in aqueous solutions, there is a twofold increase in relaxivity for Gd₂O₃ compared to commercial agent Gd-DTPA. In cell culture medium as well as in cells, there is a clear T₁ effect and a distinct increase in signal intensity in T₁-mapped images. Fluorescent studies show that the Gd₂O₃ nanoparticles doped with 5% terbium have interesting fluorescent properties and that these particles could work as a multimodal contrast agent.</p><p>This study shows that Gd₂O₃ nanoparticles possess excellent relaxation properties that are retained in more biological environments. Gd₂O₃ particles are suitable as a T₁ contrast agent, but seem also be adequate for T₂ enhancement in for instance cell labeling experiments.</p>

Orientador: Fernando Aparecido Sigoli / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Química / Made available in DSpace on 2018-08-16T00:25:38Z (GMT). No. of bitstreams: 1 Gaspar_RafaelDiLazaro_M.pdf: 2421283 bytes, checksum: 826f5a4d6da00ce1a1f5a12699432d66 (MD5) Previous issue date: 2010 / Resumo: Neste trabalho, foram estudadas a síntese e a caracterização de nanopartículas de óxido de gadolínio dopado com európio(III). Os óxidos de gadolínio foram obtidos pela termodecomposição dos precursores hidroxicarbonatos de gadolínio sintetizados a partir do método da precipitação homogênea, utilizando-se a termólise da uréia como fonte de íons OH e CO3. Modificou-se o método da precipitação homogênea através do uso de misturas água/etanol, água/etilenoglicol e água/terc-butanol nas proporções 80:20 e 60:40% v/v, e utilizou-se nitrato e cloreto como fonte das terras raras. As amostras de hidroxicarbonato e óxido obtidas foram caracterizadas pelas técnicas de espectroscopia vibracional na região do infravermelho, análise elementar, difração de raios X, termogravimetria, espectroscopia de luminescência e microscopia eletrônica de varredura. Pela espectroscopia vibracional na região do infravermelho, observa-se que o íon carbonato está coordenado de forma bidentada ao metal, além da presença de moléculas de água nos precursores de hidroxicarbonato. A difratometria de raios X sugere indícios de mistura entre as composições (Gd2(OH)2(CO3)2.H2O) e (Gd(OH)(CO3).H2O) nos precursores, e os dados de análise térmica e a análise elementar corroboram estas observações. A termodecomposição dos precursores se dá através de uma reação topotática, resultando nas amostras de óxido de gadolínio com a manutenção da morfologia. Os óxidos cristalizam em uma estrutura cúbica de grupo espacial Ia-3, e os espectros vibracionais na região do infravermelho mostram que ocorre absorção de moléculas de CO2 e H2O na superfície. As propriedades luminescentes das amostras de óxido de gadolínio preparadas são atribuídas às transições intraconfiguracionais do íon európio(III). O tamanho médio de partícula das amostras de óxido varia em função do tamanho médio dos respectivos precursores. Parâmetros como a constante dielétrica do meio, a taxa de termodecomposição da uréia, a estabilização dos núcleos de precipitação e a viscosidade das soluções atuam conjuntamente na precipitação das amostras de hidroxicarbonato de gadolínio / Abstract: This work reports on the synthesis and characterization of europium(III)-doped gadolinium oxide and its particle size control. The europium(III)-doped gadolinium oxide samples were obtained by thermodecomposition of the hydroxycarbonate precursors prepared by the homogeneous precipitation method. Water/alcohol mixtures, in the ratio of 80:20 and 60:40% v/v, were used to modify the reaction media where the precipitation occurs. Gadolinium and europium nitrate and chloride were used as rare earth sources. Characterization of both, the precursor gadolinium hydroxycarbonate, and the gadolinium oxide were performed by infrared spectroscopy, elemental analysis, X ray diffractometry, thermogravimetry, luminescence spectroscopy and scanning electron microscopy. Infrared spectra show that the carbonate ion is bidentate when coordinating the gadolinium ions and that water molecules are present in the hydroxycarbonte samples. A mixture of (Gd2(OH)2(CO3)2.H2O) and (Gd(OH)(CO3).H2O) in the precursors is suggested by X ray diffractometry, in agreement with the elemental analysis and thermo gravimetric data. The thermodecomposition of the precursors occurs through a topotatical reaction, resulting in the gadolinium oxide samples with similar morphology to the precursor. The gadolinium oxide crystallizes in the cubic phase with spatial group Ia-3. The infrared spectra of the oxides indicate a possible absorption of water and carbon dioxide molecules on the oxide nanoparticles surface. The luminescent properties of the oxide samples were attributed to intraconfigurational transitions of the europium(III) ion. The oxide mean particle size is function of the mean particle size of its respective precursor. It was observed that reaction parameters such as dielectric constant of the reaction media, the urea thermodecomposition rate, the stabilization of the nuclei during the precipitation and the reaction media viscosities seem to control the particle mean size of europium(III)- doped gadolinium oxide / Mestrado / Quimica Inorganica / Mestre em Química

Metal-insulator-metal (MIM) capacitors are used for analog, RF, and DRAM applications in ICs. The International Technology Roadmap for Semiconductors (ITRS) specifies continuing increase in capacitance density (> 7 fF/ m2), lower leakage current density (< 10 8 A/cm2), very low effective oxide thickness (EOT < 1 nm, for DRAM applications), and better capacitance density-voltage (C-V) linearity ( < 100 ppm/V2, for analog/RF applications). In addition, the maximum fabrication/processing temper-ature should not be greater than 400 0C, in order to be compatible with the thermal budget of back-end fabrication steps. Low dielectric constants of conventional SiO2 and Si3N4 capacitors limit the capacitance densities of these devices. Although scaling down of dielectric thickness increases the capacitance density, it results in large leakage current density and poor C-V linearity. In this work, the effects of high-k materials (Eu2O3, Gd2O3, TiO2) on the device performance of MIM capacitors are studied. The performance of multi-dielectric stack, and doped-dielectric stack devices are also investigated. The effects of anneal temperature, anneal ambient, anneal mode, and dielectric thickness on device performance are evaluated. C-V, current density-voltage (J-V), and reliability measurements are performed to benchmark the electrical performance, and this is correlated to the structural and material properties of the films through ellipsometry, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) measurements. High-performance MIM capacitors are fabricated by using (RF sputtered) Eu2O3 dielectric. The fabricated devices are subjected to different anneal conditions, to study their device performance. Forming gas (FG) and argon (Ar) annealed devices are shown to have higher capacitance densities (7 fF/ m2jF G), lower leakage current densities (3.2 10 8 A/cm2jAr at -1 V), and higher , compared to oxygen (O2) annealed de-vices ( 100kHz = 193 ppm/V2jO2). The electrical characterization results are correlated with the surface chemical states of the films through XPS measurements. The annealing ambient is shown to alter the surface chemical states, which, in turn, modulate the electrical characteristics. High-density MIM capacitors are fabricated by using (RF sputtered) Gd2O3, and Gd2O3-Eu2O3 stacked dielectrics. The fabricated Gd2O3 capacitors are also subjected to different anneal conditions, to study their device performance. Although Gd2O3 capacitors provide high capacitance density (15 fF/ m2), they suffer from high leakage current density, high , and poor reliability. Therefore, stacked dielectrics of Gd2O3 and Eu2O3 (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) are fabricated to reduce leakage current density, improve , and improve reliability, with only a marginal reduction in capacitance density, compared to Gd2O3 capacitors. Density of defects and barrier/trap heights are extracted for the fabricated capacitors, and correlated with the device characteristics. High-performance MIM capacitors with bilayer dielectric stacks of (ALD-deposited) TiO2-ZrO2, and Si-doped ZrO2 are characterized. Devices with (ALD-deposited) TiO2/ ZrO2/TiO2 (TZT) and AlO-doped TZT stacks are also characterized. The influence of doping on the device performance is studied. The surface chemical states of the deposited films are analyzed by high-resolution XPS. The structural analysis of the samples is performed by XRD measurements, and this is correlated to the electrical characteristics of the devices. Reliability measurements are performed to study the effects of constant voltage and current stress on device performance. High capacitance density (> 45 fF/ m2), low leakage current density (< 5 10 8 A/cm2 at -1 V, for most devices), and sub-nm EOT are achieved. These parameters exceed the ITRS specifications for DRAM storage capacitors.

Les matériaux piézoélectriques, comme le titanate-zirconate de plomb Pb(ZrxTi1-x)O3 (PZT), l’oxyde de zinc ZnO, ainsi que la solution solide de Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), sont actuellement l’objet d’études de plus en plus nombreuses à cause de leurs applications innovantes dans les systèmes micro-électromécaniques (MEMS). Afin de les intégrer sur substrat de silicium, certaines précautions doivent être prises en compte concernant par exemple des couches tampon, les électrodes inférieures. Dans cette thèse, des films piézoélectriques (PZT et PMN-PT) ont été épitaxiés avec succès sous forme de monocristaux sur silicium et SOI (silicon-on-insulator) par procédé sol-gel. En effet, des études récentes ont montré que les films piézoélectriques monocristallins semblent posséder des propriétés supérieures à celles des films polycristallins, permettant ainsi une augmentation de la performance des dispositifs MEMS. Le premier objectif de cette thèse était de réaliser l'épitaxie de film monocristallin de matériaux piézoélectriques sur silicium. L'utilisation d’une couche tampon d'oxyde de gadolinium (Gd2O3) ou de titanate de strontium (SrTiO3 ou STO) déposés par la technique d’épitaxie par jets moléculaires (EJM) a été explorée en détail pour favoriser l’épitaxie du PZT et PMN-PT sur silicium. Sur le système Gd2O3/Si(111), l’étude par diffraction des rayons X (XRD) de la croissance du film PZT montre que le film est polyphasé avec la présence de la phase parasite pyrochlore non ferroélectrique. Cependant, le film PZT déposé sur le système STO/Si(001) est parfaitement épitaxié sous forme d’un film monocristallin. Afin de mesurer ses propriétés électriques, une couche de ruthenate de strontium conducteur SrRuO3 (SRO) déposée par ablation laser pulsé (PLD) a été utilisée comme l'électrode inférieure à cause de son excellente conductibilité et de sa structure cristalline pérovskite similaire à celle du PZT. Les caractérisations électriques sur des condensateurs Ru/PZT/SRO démontrent de très bonnes propriétés ferroélectriques avec présence de cycles d'hystérésis. Par ailleurs, le matériau relaxeur PMN-PT a aussi été épitaxié sur STO/Si comme l’a confirmé la diffraction des rayons X ainsi que la microscopie électronique en transmission (TEM). Ce film monocristallin est de la phase de perovskite sans présence de pyrochlore. En outre, une étude en transmission du rayonnement infrarouge au synchrotron a prouvé une transition de phase diffuse sur une large gamme de température, comme attendue dans le cas d’un relaxeur. L'autre intérêt d'avoir des films PZT monocristallins déposés sur silicium et SOI est de pouvoir utiliser les méthodes de structuration du silicium bien standardisées maintenant pour fabriquer les dispositifs MEMS. La mise au point d’un procédé de micro-structuration en salle blanche a permis de réaliser des cantilevers et des membranes afin de caractériser mécaniquement les couches piézoélectriques. Des déplacements par l'application d'une tension électrique ont ainsi pu être détectés par interférométrie. Finalement, cette caractérisation par interférométrie a été combinée avec une modélisation basée sur la méthode des éléments finis. Dans le futur, il sera nécessaire d’optimiser le procédé de microfabrication du dispositif MEMS afin d’en améliorer les performances électromécaniques. Enfin, des caractérisations au niveau du dispositif MEMS lui-même devront être développées en vue de leur utilisation dans de futures applications. / Recently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications.

Parmi les nanoparticules aptes à accompagner la radiothérapie en clinique, les nanoparticules à base d’oxyde de gadolinium paraissent pertinentes, de part leur multimodalité en imagerie et leur effet radiosensibilisant prouvé in vitro et in vivo. Cet effet de radiosensibilisation est exceptionnel notamment sur des cellules cancéreuses radiorésistantes de la lignée SQ20B (carcinome squameux tête et cou) et uniquement pour des doses modérées de nanoparticules (aux alentours de 0.6 mM en Gd). Les clichés de microscopie électronique ont montré que ce maximum de radiosensibilisation est dû à une internalisation maximale des particules dans le cytoplasme, notamment par macropinocytose. Ce mécanisme d’internalisation est caractérisé par la formation de vésicules de grandes tailles, ou macropinosomes. Il se produit suivant deux étapes : la formation d’agglomérats de nanoparticules à proximité de la membrane cellulaire puis la récupération de ceux-ci par les lamellipodes de la cellule. La première étape est fortement dépendante des caractéristiques physicochimiques des particules, plus particulièrement leur potentiel zêta qui détermine la taille de l’agglomérat, et de la distance les séparant de la cellule. Dans des gammes de taille et de distance à la membrane optimales aux concentrations modérées, l’agglomérat peut être récupéré par les lamellipodes de la cellule. Il s’en suit une protubérance sur la membrane plasmique formant un macropinosome contenant les agglomérats de nanoparticules. Cet endosome précoce suivra ensuite le schéma d’endocytose classique dans le cytoplasme en fusionnant avec des corps multivésiculaires, uniquement visible en microscopie électronique à transmission, pouvant contenir des enzymes de dégradation détruisant leur contenu. Ces enzymes rendent le pH acide à l’intérieur de la vésicule. Plus les nanoparticules sont proches du noyau cellulaire plus leur effet radiosensibilisant sera efficace. Les espèces oxygénées réactives (ROS) et les électrons Auger et secondaires peuvent atteindre l’ADN du noyau plus facilement. A faibles doses (<0.4 mM) très peu de nanoparticules sont internalisées et un effet linéaire de la radiosensibilisation est observé jusqu'à 0.6 mM. A fortes doses (> 0.7 mM) les nanoparticules forment une couronne autour de la membrane cellulaire agissant comme écran, empêchant ainsi les ROS et les électrons générés de pouvoir atteindre l’ADN et induire des cassures, le noyau étant situé à quelques micromètres de la membrane cellulaire. Les résultats obtenus ouvrent la voie sur la nécessité de contrôler l'internalisation cellulaire des nanoparticules en contrôlant leur chimie, laissant envisager ainsi des opportunités prometteuses dans le domaine de la radiothérapie assistée par nanoparticules délivrant de faibles doses de radiation aux patients. / Over the last few decades, nanoparticles have been studied in theranostic field with the objective of exhibiting a long circulation time through the body coupled to major accumulation in tumor tissues, rapid elimination, therapeutic potential and contrast properties. In this context, we developed sub-5 nm gadolinium-based nanoparticles that possess in vitro efficient radiosensitizing effects at moderate concentration when incubated with head and neck squamous cell carcinoma cells (SQ20B). Two main cellular internalization mechanisms were evidenced and quantified: passive diffusion and macro- pinocytosis. Whereas the amount of particles internalized by passive diffusion is not sufficient to induce in vitro a significant radiosensitizing effect, the cellular uptake by macropinocytosis leads to a successful radiotherapy in a limited range of particles incubation concentration. Macropinocytosis processes in two steps: formation of agglomerates at vicinity of the cell followed by their collect via the lamellipodia (i.e. the “arms”) of the cell. The first step is strongly dependent on the physicochemical characteristics of the particles, especially their zeta potential that determines the size of the agglomerates and their distance from the cell. These results should permit to control the quantity of particles internalized in the cell cytoplasm, promising ambitious opportunities towards a particle-assisted radiotherapy using lower radiation doses.