Neste trabalho é apresentada uma análise da antena planar F-invertido (PIFA) com o objetivo de identificar os parâmetros geométricos que influenciam nas características de desempenho: frequência de ressonância, perda de retorno e largura de banda. Para realizar este estudo é desenvolvido um algoritmo em linguagem C baseado no método das Diferenças Finitas no Domínio do Tempo (FDTD). Duas PIFAs de geometria distintas foram investigadas. O primeiro modelo trata da geometria tradicional de elemento irradiador e plano de terra, ambos retangulares. Já o segundo modelo apresenta a fenda em formato de L no elemento irradiador, para operação em frequência dupla, e o plano de terra em formato de T, visando a aumentar a largura de banda. Os resultados da simulação do algoritmo identificam os parâmetros que influenciam no aumento nas duas larguras de banda, e são aplicados na prototipação de uma PIFA GSM-900 e GSM-1800. As medidas de laboratório do protótipo evidenciam os resultados previstos pelo algoritmo. / A Planar Inverted-F Antenna (PIFA) analysis is presented in this work, aiming to identify the geometric parameters that influence the antenna performance, such as resonant frequency, return loss and bandwidth. To accomplish this goal, an algorithm in C language based on the Finite-Difference Time-Domain (FDTD) method is developed. Two PIFAs with distinct geometries are investigated. The first one corresponds to a typicall rectangular patch and ground plane, The second model presents an L-shaped slot for dual frequency band operation, combined with a T-shaped ground plane, in order to increase the bandwidth. The simulated results obtained by algorithm identify the parameters that respond for both bandwidths enhancement, and are applied in a PIFA GSM-900/GSM-1800 practical project. The prototype’s measurements confirm the simulated results.

abstract: High Impedance Surfaces (HISs), which have been investigated extensively, have proven to be very efficient ground planes for low profile antenna applications due to their unique reflection phase characteristics. Another emerging research field among the microwave and antenna technologies is the design of flexible antennas and microwave circuits to be utilized in conformal applications. The combination of those two research topics gives birth to a third one, namely the design of Conformal or Flexible HISs (FHISs), which is the main subject of this dissertation. The problems associated with the FHISs are twofold: characterization and physical realization. The characterization involves the analysis of scattering properties of FHISs in the presence of plane wave and localized sources. For this purpose, an approximate analytical method is developed to characterize the reflection properties of a cylindrically curved FHIS. The effects of curvature on the reflection phase of the curved FHISs are examined. Furthermore, the effects of different types of currents, specifically the ones inherent to finite sized periodic structures, on the reflection phase characteristics are observed. After the reflection phase characterization of curved HISs, the performance of dipole antennas located in close proximity to a curved HIS are investigated, and the results are compared with the flat case. Different types of resonances that may occur for such a low-profile antenna application are discussed. The effects of curvature on the radiation performance of antennas are examined. Commercially available flexible materials are relatively thin which degrades the bandwidth of HISs. Another practical aspect, which is related to the substrate thickness, is the compactness of the surface. Because of the design limitations of conventional HISs, it is not possible to miniaturize the HIS and increase the bandwidth, simultaneously. To overcome this drawback, a novel HIS is proposed with a periodically perforated ground plane. Copper plated through holes are extremely vulnerable to bending and should be avoided at the bending parts of flexible circuits. Fortunately, if designed properly, the perforations on the ground plane may result in suppression of surface waves. Hence, metallic posts can be eliminated without hindering the surface wave suppression properties of HISs. / Dissertation/Thesis / Ph.D. Electrical Engineering 2013

Neste trabalho é apresentada uma análise da antena planar F-invertido (PIFA) com o objetivo de identificar os parâmetros geométricos que influenciam nas características de desempenho: frequência de ressonância, perda de retorno e largura de banda. Para realizar este estudo é desenvolvido um algoritmo em linguagem C baseado no método das Diferenças Finitas no Domínio do Tempo (FDTD). Duas PIFAs de geometria distintas foram investigadas. O primeiro modelo trata da geometria tradicional de elemento irradiador e plano de terra, ambos retangulares. Já o segundo modelo apresenta a fenda em formato de L no elemento irradiador, para operação em frequência dupla, e o plano de terra em formato de T, visando a aumentar a largura de banda. Os resultados da simulação do algoritmo identificam os parâmetros que influenciam no aumento nas duas larguras de banda, e são aplicados na prototipação de uma PIFA GSM-900 e GSM-1800. As medidas de laboratório do protótipo evidenciam os resultados previstos pelo algoritmo. / A Planar Inverted-F Antenna (PIFA) analysis is presented in this work, aiming to identify the geometric parameters that influence the antenna performance, such as resonant frequency, return loss and bandwidth. To accomplish this goal, an algorithm in C language based on the Finite-Difference Time-Domain (FDTD) method is developed. Two PIFAs with distinct geometries are investigated. The first one corresponds to a typicall rectangular patch and ground plane, The second model presents an L-shaped slot for dual frequency band operation, combined with a T-shaped ground plane, in order to increase the bandwidth. The simulated results obtained by algorithm identify the parameters that respond for both bandwidths enhancement, and are applied in a PIFA GSM-900/GSM-1800 practical project. The prototype’s measurements confirm the simulated results.

Esse trabalho tem como objetivo estudar o comportamento de transistores de camada de silício e óxido enterrado ultrafinos (UTBB SOI nMOSFET) e transistores de nanofios horizontais com porta ômega ? (?G NW SOI MOSFET) com ênfase na variação da tensão aplicada no substrato (VGB). As análises foram feitas através de medidas experimentais e simulações numéricas. Nos dispositivos UTBB SOI nMOSFET foram estudados dispositivos com e sem implantação de plano de terra (GP), de três diferentes tecnologias, e com diferentes comprimentos de canal. A partir do modelo analítico de tensão de limiar desenvolvido por Martino et al. foram definidos os valores de VGB. A tecnologia referência possui 6 nm de camada de silício (tSi) e no óxido de porta uma camada de 5 nm de SiO2. A segunda tecnologia tem um tSi maior (14 nm) em relação a referência e a terceira tecnologia tem no óxido de porta um material de alta constante dielétrica, HfSiO. Na tecnologia de referência, os dispositivos com GP mostraram melhores resultados para transcondutância na região de saturação (gmSAT) devido ao forte acoplamento eletrostático entre a região da porta e do substrato. Porém os dispositivos com GP apresentam uma maior influência do campo elétrico longitudinal do dreno no canal, assim os parâmetros condutância de saída (gD) e tensão Early (VEA) são degradados, consequentemente o ganho de tensão intrínseco (AV) também. Na tecnologia com tSi de 14 nm, a influência do acoplamento eletrostático entre porta e substrato é menor em relação a referência, devido à maior espessura de tSi. Como a penetração do campo elétrico do dreno é maior em dispositivos com GP, todos os parâmetros analógicos estudados são degradados em dispositivos com GP. A última tecnologia estudada, não apresenta grande variação nos resultados quando comparadodispositivos com e sem GP. O AV, por exemplo, tem uma variação entre 1% e 3% comparando os dispositivos com e sem GP. Foram feitas análises em dispositivos das três tecnologias com comprimento de canal de 70 nm, e todos os parâmetros degradaram com a diminuição do comprimento de canal, como esperado. O fato de ter um comprimento de canal menor faz com que a influência do campo elétrico longitudinal do dreno seja mais relevante, degradando assim todos os parâmetros analógicos nos dispositivos com GP. Nos dispositivos ?G NW SOI MOSFET foram feitas análises em dispositivos pMOS e nMOS com diferentes larguras de canal (WNW = 220 nm, 40 nm e 10 nm) para diferentes VGB. Através de simulações viu-se que dispositivos com largura de canal de 40 nm possuem uma condução de corrente pela segunda interface para polarizações muito altas (VGB = +20 V para nMOS e VGB -20 V para pMOS). Todavia essa condução de corrente na segunda interface ocorre ao mesmo tempo que na primeira interface, impossibilitando fazer a separação dos efeitos de cada interface.A medida que a polarização no substrato faz com que haja uma condução na segunda interface, todos os parâmetros degradam devido a essa condução parasitária. Dispositivos estreitos sofrem menor influência de VGB e, portanto, tem os parâmetros menos degradados, diferente dos dispositivos largos que tem uma grande influência de VGB no comportamento elétrico do transistor. Quando a polarização no substrato é feita a fim de que não haja condução na segunda interface, a variação da inclinação de sublimiar entre dispositivos com WNW = 220 nm e 10 nm é menor que 2 mV/déc. Porém a corrente de dreno de estado ligado do transistor (ION) apresenta melhores resultados em dispositivos largos chegando a 6 vezes maior para nMOS e 4 vezes maior para pMOS que em dispositivos estreitos. Os parâmetros analógicos sofrem pouca influência da variação de VGB. Os dispositivos estreitos (WNW = 10 nm) praticamente têm resultados constantes para gmSAT, VEA e AV. Já os dispositivos largos (WNW = 220 nm) possuem uma pequena degradação de gmSAT para os nMOS, o que degrada levemente o AV em cerca de 10 dB. A eficiência do transistor (gm/ID) apresentou grande variação com a variação de VGB, piorando-a a medida que a segunda interface ia do estado de não condução para o estado de condução. Porém analisando os dados para a tensão que não há condução na segunda interface observou-se que, em inversão forte, a eficiência do transistor apresentou uma variação de 1,1 V-1 entre dispositivos largos (WNW = 220 nm) e estreitos (WNW = 10 nm). Com o aumento do comprimento do canal, esse valor de variação tende a diminuir e dispositivos largos passam a ser uma alternativa válida para aplicação nessa região de operação. / This work aims to study the behavior of the ultrathin body and buried oxide SOI nMOSFET (UTBB SOI nMOSFET) and the horizontal ?-gate nanowire SOI MOSFET (?G NW SOI MOSFET) with the variation of the back gate bias (VGB). The analysis were made through experimental measures and numerical simulation. In the UTBB SOI nMOSFET devices, devices with and without ground plane (GP) implantation of three different technologies were studied. Based on analytical model developed by Martino et al. the values VGB were defined. The reference technology has silicon film thickness (tSi) of 6 nm and 5 nm of SiO2 in the front oxide. The second technology has a thicker tSi of 14 nm comparing to the reference and the third technology has a high-? material in the front oxide, HfSiO. In the reference technology, the devices with GP shows better result for transconductance on saturation region (gmSAT) due to the strong coupling between front gate and substrate. However, devices with GP have major influence of the drain electrical field penetration, then the output conductance (gD) and Early voltage (VEA) are degraded, consequently the intrinsic voltage gain (AV) as well. In the technology with tSi of 14 nm, the influence of the coupling between front gate and substrate is lower because of the thicker tSi. Once the drain electrical field penetration is higher in devices with GP, all analog parameters are degraded in devices with GP. The third technology, presents results very close between devices with and without GP. The AV has a variation from 1% to 3% comparing devices with and withoutGP. Devices with channel length of 70 nm were analyzed and all parameters degraded with the decrease of the channel length, as expected. Due to the shorter channel length, the influence of the drain electrical field penetration is more relevant, degrading all the analog parameters in devices with GP. In the ?G NW SOI MOSFET devices, the analysis were done in nMOS and pMOS devices with different channel width (WNW = 220 nm, 40 nm and 10 nm) for different VGB. By the simulations, devices with channel width of 40 nm have a conduction though the back interface for very high biases (+20 V for nMOS and -20 V for pMOS). However, this conduction occurs at the same time as in the front interface, so it is not possible to separate de effects of each interface. As the substrate bias voltage induces a back gate current, all the parameters are degraded due to this parasitic current. Narrow devices are less affected by VGB and thus its parameters are less degraded, different from wider devices, in which VGB has a greater influence on their behavior. When the back gate is biased in order to avoid the conduction in back interface, the subthreshold swing variation between devices with WNW = 220 nm and 10 nm is lower than 2 mV/déc. However, the on state current (ION) has better results in wide devices reaching 6 times bigger for nMOS and 4 times bigger for pMOS The analog parameterssuffer little influence of the back gate bias variation. The narrow devices (WNW = 10 nm) have practically constant results gmSAT, VEA and AV. On the other hand, wide devices (WNW = 220 nm) have a small degradation in the gmSAT for nMOS, which slightly degrades de AV. The transistor efficiency showed great variation with the back gate bias variation, worsening as the back interface went from non-conduction state to conduction state. However, when the back gate is biased avoiding the conduction in back interface, the transistor efficiency for strong inversion region has a small variation of 1,1 V-1 between wide (WNW = 220 nm) and narrow (WNW = 10 nm) devices. As the channel length increases, this value of variation tends to decrease and wide devices become a valid alternative for applications in this region of operation.

Yes / Empirical results of an electrically small printed monopole antenna is described with fractional bandwidth of 185% (115 MHz–2.90 GHz) for return-loss better than 10 dB, peak gain and radiation efficiency at 1.45 GHz of 2.35 dBi and 78.8%, respectively. The antenna geometry can be approximated to a back-to-back triangular shaped patch structure that is excited through a common feed-line with a meander-line T-shape divider. The truncated ground-plane includes a central stub located underneath the feed-line. The impedance bandwidth of the antenna is enhanced with the inclusion of meander-line slots in the patch and four double split-ring resonators on the underside of the radiating patches. The antenna radiates approximately omnidirectionally to provide coverage over a large part of VHF, whole of UHF, entire of L-band and some parts of S-band. The antenna has dimensions of 48.32×43.72×0.8 mm3, which is corresponding with the electrical size of 0.235λ_0×0.211λ_0×0.003λ_0, where λ_0 is free-space wavelength at 1.45 GHz. The proposed low-profile low-cost antenna is suitable for application in wideband wireless communications systems. / H2020-MSCA-ITN-2016 SECRET-722424 and UK Engineering and Physical Sciences Research Council (EPSRC) under grant EP/E022936/1

Bandwidth enhancement of the LTE/WWAN handset antenna achieved by improving the excited surface current distribution in the system ground plane is presented. To achieve this goal, the system ground plane is shaped to be of a C-shape in this thesis. In this case, the longitudinal excited surface current in the system ground plane can have a smooth distribution. The proposed antenna is disposed at one edge of the C-shaped system ground plane, and the antenna comprises a driven monopole strip, a shorted monopole strip and a distributed parallel resonance (PR) circuit. By controlling the resonant frequency of the distributed PR circuit, it can result in dual-resonance excitation of the lowest resonant mode contributed by the shorted monopole strip to cover the LTE700/GSM850/900 operation. The antenna also occupies a small volume of 44 ¡Ñ 10 ¡Ñ 5 mm3 (about 2.2 cm3). Good radiation characteristics of the antenna are also obtained. For practical applications, effects of the electrical connection between the system ground plane and the surrounding metal elements such as the battery¡¦s metal casing and the handset metal midplate are studied. The simulated SAR (Specific Absorption Rate) and HAC (Hearing Aid Compatibility) results are also analyzed.

The main objective of this research is to design, model and implement several antenna geometries using electromagnetic band gap (EBG) material and a defected ground plane. Several antenna applications are addressed with the aim of improving performance, particularly the mutual coupling between the elements. The EBG structures have the unique capability to prevent or assist the propagation of electromagnetic waves in a specific band of frequencies, and have been incorporated here in antenna structures to improve patterns and reduce mutual coupling in multielement arrays. A neutralization technique and defected ground plane structures have also been investigated as alternative approaches, and may be more practical in real applications. A new Uni-planar Compact EBG (UC-EBG) formed from a compact unit cell was presented, giving a stop band in the 2.4 GHz WLAN range. Dual band forms of the neutralization and defected ground plane techniques have also been developed and measured. The recorded results for all antenna configurations show good improvement in terms of the mutual coupling effect. The MIMO antenna performance with EBG, neutralization and defected ground of several wireless communication applications were analysed and evaluated. The correlation coefficient, total active reflection coefficient (TARC), channel capacity and capacity loss of the array antenna were computed and the results compared to measurements with good agreement. In addition, a computational method combining Genetic Algorithm (GA) with surface meshing code for the analysis of a 2×2 antenna arrays on EBG was developed. Here the impedance matrix resulting from the meshing analysis is manipulated by the GA process in order to find the optimal antenna and EBG operated at 2.4 GHz with the goal of targeting a specific fitness function. Furthermore, an investigation of GA on 2×2 printed slot on DGS was also done.

Dielectric resonator antenna (DRA) technologies are applicable to a wide variety of mobile wireless communication systems. The principal energy loss mechanism for this type of antenna is the dielectric loss, and then using modern ceramic materials, this may be very low. These antennas are typically of small size, with a high radiation efficiency, often above 95%; they deliver wide bandwidths, and possess a high power handling capability. The principal objectives of this thesis are to investigate and design DRA for low profile personal and nomadic communications applications for a wide variety of spectrum requirements: including DCS, PCS, UMTS, WLAN, UWB applications. X-band and part of Ku band applications are also considered. General and specific techniques for bandwidth expansion, diversity performance and balanced operation have been investigated through detailed simulation models, and physical prototyping. The first major design to be realized is a new broadband DRA operating from 1.15GHz to 6GHz, which has the potential to cover most of the existing mobile service bands. This antenna design employs a printed crescent shaped monopole, and a defected cylindrical DRA. The broad impedance bandwidth of this antenna is achieved by loading the crescent shaped radiator of the monopole with a ceramic material with a permittivity of 81. The antenna volume is 57.0  37.5  5.8 mm3, which in conjunction with the general performance parameters makes this antenna a potential candidate for mobile handset applications. The next class of antenna to be discussed is a novel offset slot-fed broadband DRA assembly. The optimised structure consists of two asymmetrically located cylindrical DRA, with a rectangular slot feed mechanism. Initially, designed for the frequency range from 9GHz to 12GHz, it was found that further spectral improvements were possible, leading to coverage from 8.5GHz to 17GHz. Finally, a new low cost dual-segmented S-slot coupled dielectric resonator antenna design is proposed for wideband applications in the X-band region, covering 7.66GHz to 11.2GHz bandwidth. The effective antenna volume is 30.0 x 25.0 x 0.8 mm3. The DR segments may be located on the same side, or on opposite sides, of the substrate. The end of these configurations results in an improved diversity performance.

Made available in DSpace on 2014-12-17T14:55:51Z (GMT). No. of bitstreams: 1 GilmaraLRA_DISSERT.pdf: 1784124 bytes, checksum: 3fa88890e9688357a4f14429c6d94ab0 (MD5) Previous issue date: 2011-07-29 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / This work presents the analysis of an antenna of fractal microstrip of Koch with dielectric multilayers and inclinations in the ground plane, whose values of the angles are zero degree (without inclinations), three, seven and twelve degrees. This antenna consists of three dielectric layers arranged vertically on each other, using feeding microstrip line in patch 1, of the first layer, which will feed the remaining patches of the upper layers by electromagnetic coupling. The objective of this work is to analyze the effects caused by increase of the angle of inclination of the ground plane in some antenna parameters such as return loss, resonant frequency, bandwidth and radiation pattern. The presented results demonstrate that with the increase of the inclination angle it is possible to get antennas with characteristics multiband, with bigger bandwidth, and improving the impedance matching for each case analyzed, especially the larger angle / Este trabalho apresenta a an?lise de uma antena de microfita fractal de Koch com multicamadas diel?tricas e inclina??es no plano de terra, cujos valores dos ?ngulos s?o zero grau (sem inclina??es), tr?s, sete e doze graus. Esta antena ? constitu?da por tr?s camadas diel?tricas dispostas verticalmente umas sobre as outras, utilizando alimenta??o por linha de microfita no patch 1, da primeira camada, que ir? alimentar os demais patches das camadas superiores por acoplamento eletromagn?tico. O objetivo deste trabalho ? analisar os efeitos causados pelo aumento do ?ngulo de inclina??o do plano de terra em alguns par?metros da antena, tais como perda de retorno, frequ?ncia de resson?ncia, largura de banda e diagrama de radia??o. Os resultados apresentados demonstram que com o aumento do ?ngulo de inclina??o ? poss?vel obter antenas com caracter?sticas multibanda, com maiores larguras de banda, al?m de melhoramento do casamento de imped?ncias para cada caso analisado, sobretudo os de maior ?ngulo de inclina??o

The main objective of this research is to design, model and implement several antenna geometries using electromagnetic band gap (EBG) material and a defected ground plane. Several antenna applications are addressed with the aim of improving performance, particularly the mutual coupling between the elements. The EBG structures have the unique capability to prevent or assist the propagation of electromagnetic waves in a specific band of frequencies, and have been incorporated here in antenna structures to improve patterns and reduce mutual coupling in multielement arrays. A neutralization technique and defected ground plane structures have also been investigated as alternative approaches, and may be more practical in real applications. A new Uni-planar Compact EBG (UC-EBG) formed from a compact unit cell was presented, giving a stop band in the 2.4 GHz WLAN range. Dual band forms of the neutralization and defected ground plane techniques have also been developed and measured. The recorded results for all antenna configurations show good improvement in terms of the mutual coupling effect. The MIMO antenna performance with EBG, neutralization and defected ground of several wireless communication applications were analysed and evaluated. The correlation coefficient, total active reflection coefficient (TARC), channel capacity and capacity loss of the array antenna were computed and the results compared to measurements with good agreement. In addition, a computational method combining Genetic Algorithm (GA) with surface meshing code for the analysis of a 2×2 antenna arrays on EBG was developed. Here the impedance matrix resulting from the meshing analysis is manipulated by the GA process in order to find the optimal antenna and EBG operated at 2.4 GHz with the goal of targeting a specific fitness function. Furthermore, an investigation of GA on 2×2 printed slot on DGS was also done. / Ministry of Higher Education Malaysia and Universiti Tun Hussein Onn Malaysia (UTHM)