No description available.

No description available.

No description available.

No description available.

Time-domain terahertz spectroscopy is now a well-established technique. Of the many methods available for a terahertz source for terahertz spectroscopy, the most widely used may be the GaAs-based photoconductive antenna, as it provides relatively high power at terahertz frequencies, commercially available up to 150 µW, and a wide-bandwidth, approximately 70 GHz to 3.5 THz. One of the limitations for developing more accurate and sensitive terahertz interrogation techniques is the lack of higher power sources. Because of our research interests in terahertz spectroscopy, we investigated detailed design and fabrication parameters involved in the photoconductive antenna, which exploits the surface plasma oscillation to produce a wideband pulse. The investigation enabled us to develop a new photoconductive antenna that is capable of generating a high power terahertz beam, at least twenty times stronger than those currently available. Throughout this research, it was discovered that antenna electrodes with particular geometries could produce superradiance, also known as the Dicke effect. Chaotic electrodes with a predisposition to lead charge-carriers into chaotic trajectories, e.g. rippled geometry, were exploited to reduce undesirable heat effects by driving thermal-electrons away from the terahertz generation site, i.e. the location of the surface plasma, while concentrating the removed charge-carriers in separate locations slightly away from the surface plasma. Then, spontaneous emission of coherent terahertz radiation may occur when the terahertz pulse generated by the surface plasma stimulates the concentrated carriers. This spontaneous emission enhanced the total coherent terahertz beam strength, as it occurs almost simultaneously with the primary terahertz beam. In principle, the spontaneous emission power increases as N^2, with the number N of dipole moments resulted from the concentrated charge carriers. Hence, if the design parameters are optimized, it may be possible to increase the strength of coherent terahertz beam by more than one order of magnitude with a photoconductive antenna containing rippled electrodes. However, as the parameters are yet to be optimized, we have only demonstrated 10-20 % enhancement with our current photoconductive antennas. Photoconductive antennas were fabricated via photolithography and characterized by time-domain terahertz spectroscopy and pyroelectric detection. In addition to chaotic electrodes, a variety of other parameters were characterized, including GaAs substrate thickness, GaAs crystal lattice orientation, trench depth for electrodes, metal-semiconductor contact, and bias voltage across electrodes. Nearly all parameters were found to play a crucial role influencing terahertz beam emission and carrier dynamics. By exploiting wave chaos and other antenna parameters, we developed a new photoconductive antenna capable of continuous operation with terahertz power twenty times larger than that of the conventional photoconductive antennas, improving from 150 µW to 3 mW. With further optimizations of the parameters, we expect more dramatic improvement of the photoconductive antenna in the near future. / Physics

<p> Flexible manufacturing systems and lean production philosophies are in increasing industrial demand. Multiple manufacturing processes integrated into stand alone automated equipment can be utilized to greatly reduce operation costs. New technologies are continually being developed that can be easily combined with related manufacturing processes. Flexible machining and surface hardening operations can be realized in a single set-up by integrating a high-power diode laser (HPDL) within a machine tool structure.</p> <p> The following research presents the concept of integrated laser surface hardening within a machine tool environment. Experimental work was performed using a HPDL for transformation hardening of AISI 4140 steel.</p> <p> Both quasi-steady analytical and transient finite element heat transfer models have been developed. Solutions of the models are compared, which show that the more sophisticated finite element modeling is necessary only if accuracy of peak surface temperature is important. Otherwise, the simpler but faster analytical model can be used to describe the temperature profiles during laser heating.</p> <p> A novel approach using temperature indicating lacquers was shown to be a simple and reliable tool for temperature measurement. The analytical model was further used to find a best fit with the experimental measurements to estimate the fraction of laser power absorbed by the workpiece surface. With the aid of the model, it was shown that the austenite transformation temperature is highly dependent on the scanning speed. For slower speeds, the transform temperature was closer to the A3 temperature given by the iron-iron carbide phase diagram. Tests performed at faster scanning speeds indicated transformation temperatures as high as 1230 °C.</p> <p> Experiments were divided into three series. The first series was performed at slow scanning speeds (200-1000 mm/min) and low laser powers (200-500 W). Hardening was executed on flat workpieces with the laser scanning along a linear path. The second and third test series were performed at fast scanning speeds (2000-8000 mm/min) and higher laser powers (1000-2000 W) with hardening done on rotating cylindrical workpieces. The third tests series consisted of two laser passes in an attempt to increase the penetration depth of the hardened layer. These tests resulted in severe distortion due to melting that would require nearly the entire hardened layer to be machined away post heat treatment. However, if the melting temperature is not significantly exceeded multiple laser passes could be used to increase the thickness of the hardened layer.</p> <p> Higher case depths were realized for the slow tests since these tests have a greater laser-work interaction time. During laser treatment, the uncoated workpieces were left exposed to allow for oxidation and melting in order to increase the fraction of absorbed laser power. The absorptivity is shown to be as high as 85% for these tests.</p> <p> Results are presented in a form useful in selection of laser power and scanning speed to obtain the desired level of hardening, without having to resort to complex analytical or numerical models. Investigations into in-process monitoring show that measurement of surface temperature using an infrared thermometer could be used to control the generated hardened layer reducing process scrap.</p> / Thesis / Master of Applied Science (MASc)

The next generation of power converters not only must meet the characteristics demanded by the load, but also has to meet some specific requirements like limited space and high ambient temperature etc. This needs the power converter to achieve high power density and high temperature operation. It is usually required that the active power devices operate at higher switching frequencies to shrink the passive components volume. The power semiconductor devices for high frequency high density power converter applications have been investigated. Firstly, the methodology is developed to evaluate the power semiconductor devices for high power density applications. The power density figure of merit (PDFOM) for power MOSFET and IGBT are derived from the junction temperature rise, power loss and package points of view. The device matrices are generated for device comparison and selection to show how to use the PDFOM. A calculation example is given to validate the PDFOM. Several semiconductor material figures of merit are also proposed. The wide bandgap materials based power devices benefits for power density are explored compared to the silicon material power devices. Secondly, the high temperature operation characteristics of power semiconductor devices have been presented that benefit the power density. The electrical characteristics and thermal stabilities are tested and analyzed, which include the avalanche breakdown voltage, leakage current variation with junction temperature rise. To study the thermal stability of power device, the closed loop thermal system and stability criteria are developed and analyzed. From the developed thermal stability criterion, the maximum switching frequency can be derived for the converter system design. The developed thermal system analysis approach can be extended to other Si devices or wide bandgap devices. To fully and safely utilize the power devices the junction temperature prediction approach is developed and implemented in the system test, which considers the parasitic components inside the power MOSFET module when the power MOSFET module switches at hundreds of kHz. Also the thermal stability for pulse power application characteristics is studied further to predict how the high junction temperature operation affects the power density improvement. Thirdly, to develop high frequency high power devices for high power high density converter design, the basic approaches are paralleling low current rating power MOSFETs or series low voltage rating IGBTs to achieve high frequency high power output, because power MOSFETs and low voltage IGBTs can operate at high switching frequency and have better thermal handling capability. However the current sharing issues caused by transconductance, threshold voltage and miller capacitance mismatch during conduction and switching transient states may generate higher power losses, which need to be analyzed further. A current sharing control approach from the gate side is developed. The experimental results indicate that the power MOSFETs can be paralleled with proper gate driver design and accordingly the switching losses are reduced to some extent, which is very useful for the switching loss dominated high power density converter design. The gate driving design is also important for the power MOSFET module with parallel dice inside thus increased input capacitance. This results in the higher gate driver power loss when the traditional resistive gate driver is implemented. Therefore the advanced self-power resonant gate driver is investigated and implemented. The low gate driver loss results in the development of the self-power unit that takes the power from the power bus. The overall volume of the gate driver can be minimized thus the power density is improved. Next, power semiconductor device series-connection operation is often used in the high power density converter to meet the high voltage output such as high power density boost converter. The static and dynamic voltage balancing between series-connected IGBTs is achieved using a hybrid approach of an active clamp circuit and an active gate control. A Scalable Power Semiconductor Switch (SPSS) based on series-IGBTs is developed with built-in power supply and a single optical control terminal. An integrated package with a common baseplate is used to achieve a better thermal characteristic. These design features allow the SPSS unit to function as a single optically controlled three-terminal switching device for users. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. The SPSS is a useful power switch concept for building high power density, high switching frequency and high voltage functions that are beyond the capability of individual power devices. As conclusions, in this dissertation, the above-mentioned issues and approaches to develop high density power converter from power semiconductor devices standpoint are explored, particularly with regards to high frequency high temperature operation. To realize such power switches the related current sharing, voltage balance and gate driving techniques are developed. The power density potential improvements are investigated based on the real high density power converter design. The power semiconductor devices effects on power density are investigated from the power device figure of merit, high frequency high temperature operation and device parallel operation points of view. / Ph. D.

The increased power consumption and power density demands of modern technologies combined with the focus on global energy savings have increased the demands on DC/DC power supplies. DC/DC converters are ubiquitous in everyday life, found in products ranging from small handheld electronics requiring a few watts to warehouse sized server farms demanding over 50 megawatts. To improve efficiency and power density while reducing complexity and cost the modular building block approach is gaining popularity. These modular building blocks replace individually designed specialty power supplies, providing instead an optimized complete solution. To meet the demands for lower loss and higher power density, higher efficiency and higher frequency must be targeted in future designs. The objective of this dissertation is to explore and propose methods to improve the power density and performance of point of load modules ranging from 10 to 600W. For non-isolated, low current point of load applications targeting outputs ranging from one to ten ampere, the use of a three level converter is proposed to improve efficiency and power density. The three level converter can reduce the voltage stress across the devices by a factor of two compared to the traditional buck; reducing switching losses, and allowing for the use of improved low voltage lateral and lateral trench devices. The three level can also significantly reduce the size of the inductor, facilitating 3D converter integration with a low profile magnetic by doubling the effective switching frequency and reducing the volt-second across the inductor. This work also proposes solutions for the drive circuit, startup, and flying capacitor balancing issues introduced by moving to the three level topology. The emerging technology of gallium nitride can offer the ability to push the frequency of traditional buck converters to new levels. Silicon based semiconductors are a mature technology and the potential to further push frequency for improved power density is limited. GaN transistors are high electron mobility transistors offering a higher band gap, electron mobility, and electron velocity than Si devices. These material characteristics make the GaN device more suitable for higher frequency and voltage operation. This work will discuss the fundamentals of utilizing the GaN transistor in high frequency buck converter design; addressing the packaging of the GaN transistor, fundamental operating differences between GaN and Si devices, driving of GaN devices, and the impact of dead time on loss in the GaN buck converter. An analytical loss model for the GaN buck converter is also introduced. With significant improvements in device technology and packaging, the circuit layout parasitics begins to limit the switching frequency and performance. This work will explore the design of a high frequency, high density 12V integrated buck converter, identifying the impact of parasitics on converter performance, propose design improvements to reduce critical parasitics, and assess the impact of frequency on passive integration. The final part of this research considers the thermal design of a high density 3D integrated module; this addresses the thermal limitations of standard PCB substrates for high power density designs and proposes the use of a direct bond copper (DBC) substrate to improve thermal performance in the module. For 48V isolated applications, the current solutions are limited in frequency by high loss generated from the use of traditional topologies, devices, packaging, and transformer design. This dissertation considers the high frequency design of a highly efficient unregulated bus converter targeting intermediate bus architectures for use in telecom, networking, and high end computing applications. This work will explore the impact of switching frequency on transformer core volume, leakage inductance, and winding resistance. The use of distributed matrix transformers to reduce leakage inductance and winding resistance, improving high frequency transformer performance will be considered. A novel integrated matrix transformer structure is proposed to reduce core loss and core volume while maintaining low leakage inductance and winding resistance. Lastly, this work will push for higher frequency, higher efficiency, and higher power density with the use of low loss GaN devices. / Ph. D.

Moore's Law has been used to describe and predict the blossom of IC industries, so increasing the data density is clearly the ultimate goal of all technological development. If the power density of power electronics converters can be analogized to the data density of IC's, then power density is a critical indicator and inherent driving force to the development of power electronics. Increasing the power density while reducing or keeping the cost would allow power electronics to be used in more applications. One of the design challenges of the high-density power converter design is to have high-density magnetic components which are usually the most bulky parts in a converter. Increasing the switching frequency to shrink the passive component size is the biggest contribution towards increasing power density. However, two factors, losses and parasitics, loom and compromise the effect. Losses of high-frequency magnetic components are complicated due to the eddy current effect in magnetic cores and copper windings. Parasitics of magnetic components, including leakage inductances and winding capacitances, can significantly change converter behavior. Therefore, modeling loss and parasitic mechanism and control them for certain design are major challenges and need to be explored extensively. In this dissertation, the abovementioned issues of high-frequency transformers are explored, particularly in regards to high-power converter applications. Loss calculations accommodating resonant operating waveform and Litz wire windings are explored. Leakage inductance modeling for large-number-of-stand Litz wire windings is proposed. The optimal design procedure based on the models is developed. / Ph. D.

In recent years, the SiC power semiconductor has emerged as an attractive alternative that pushes the limitations of junction temperature, power rating, and switching frequency of Si devices. These advanced properties will lead converters to higher power density. However, the reliability of the SiC semiconductor is still under investigation, and at the same time, the standard Si device packages do not meet the requirement of high temperature operation. In order to take full advantage of SiC semiconductor devices, high density, high temperature device packaging needs to be developed. In this dissertation, a high temperature wirebond package for multi-chip phase-leg power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and thermo-mechanical reliability evaluation are described. High temperature power test shows that the presented package can perform well at the high junction temperature. In order to increase the power density, reduce the parasitic parameters, and enhance the electrical, thermo-mechanical performance over wirebond packages, planar package is utilized to better take advantages of SiC device. This dissertation proposed a novel package, in which the interconnections can be formed on small dimensional pads and enclosed pads that may baffle the regular solder based connection in other planar packages. Electrical and thermo-mechanical tests of the prototype module demonstrate the functionality and reliability of the presented planar packaging methodology. In this dissertation, together with the design example, the manual module layout design and automatic module layout design process are also presented. Furthermore, a systematic optimal design process and parametric study of the heatsink-fan cooling system by applying the analytical model is described. This dissertation also established a systematic testing procedure which can rapidly detect defects and reduce the risk in high temperature packaging testing. Finally, a wirebond module and a planar module are designed for 175 ºC junction temperature and 250 ºC junction temperatures. All the key concepts and ideas developed in this work are implemented in the prototype module development and then verified by the experimental results. / Ph. D.