Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2007. / This thesis is concerned with the fabrication of high temperature bi-epitaxial grain boundary Josephson junctions for use in superconducting microelectronic circuits. It aims to provide a proof-of-concept manufacturing process which can serve as a basis for future research at the University of Stellenbosch. The work in this thesis integrates ...

This thesis presents the results of an experimental study on single-charge effects in nanoscale Josephson junctions and Cooper pair transistors (CPTs). In nanoscale Josephson junctions the charging energy EC becomes significant at sub-Kelvin temperatures and single-charge effects, such as the Coulomb blockade of Cooper pair tunneling, influence the transport properties. In order to observe charging effects in a single Josephson junction, the impedance of the electromagnetic environment surrounding the junction has to be larger than the quantum resistance (RQ=h/4e2≈6.45kΩ). In this work the high impedance environment is obtained by biasing the sample under test (single Josephson junction or CPT) with four one-dimensional Josephson junction arrays having SQUID geometry. The advantage of this configuration is the possibility of tuning in situ the effective impedance of the electromagnetic environment. By applying a magnetic field perpendicular to the SQUID loops, the Josephson energy EJ of the SQUIDs is suppressed, resulting in an increase of the measured zero bias resistance of the arrays of several orders of magnitude (104< R0 (Ω) <109). This bias method enables the measurement of the same sample in environments with different impedance. As the impedance of the environment is increased, the current-voltage characteristics (IVCs) of the single Josephson junction and of the CPT show a well defined Coulomb blockade feature with a region of negative differential resistance, signature of the coherent tunneling of single Cooper pairs. The measured IVCs of a single Josephson junction with SQUID geometry in the high impedance environment show a qualitative agreement with the Bloch band theory as the EJ/EC ratio of the junction is tuned with the magnetic field. We also studied a single nontunable Josephson junction with strong coupling (EJ/EC > 1), where the exact dual of the overdamped Josephson effect is realized, resulting in a dual shape of the IVC, where the roles of current and voltage are exchanged. Here, we make for the first time a detailed quantitative comparison with a theory which includes the effect of fluctuations due to the finite temperature of the environment. The measurements on CPTs in the high impedance environment showed that the Coulomb blockade voltage is modulated periodically by the gate-induced charge. The gate-voltage dependence of the CPT changes from e-periodic to 2e-periodic as the impedance of the environment is increased. The high impedance environment reduces quasiparticle tunneling rates, thereby restoring the even parity of the CPT island. This behavior suggests that high impedance leads can be used to effectively suppress quasiparticle poisoning. / QC 20100928

The thesis is devoted to the study of spontaneous synchronization of coupled nonlinear oscillators. It consists of two major parts. The first describes synchronization of Josephson junctions embedded in a transmission line. I consider in detail a new phenomenon ??eation of inert oscillator pairs ??ich was observed in analytical studies. The second part of the thesis describes synchronization of an array of single mode fiber lasers, with special interest in the phenomenon of synchronization of subsets of fiber lasers in a two dimensional array through a specific arrangement of the under-pumped lasers.

abstract: In this research, our goal was to fabricate Josephson junctions that can be stably processed at 300°C or higher. With the purpose of integrating Josephson junction fabrication with the current semiconductor circuit fabrication process, back-end process temperatures (>350 °C) will be a key for producing large scale junction circuits reliably, which requires the junctions to be more thermally stable than current Nb/Al-AlOx/Nb junctions. Based on thermodynamics, Hf was chosen to produce thermally stable Nb/Hf-HfOx/Nb superconductor tunnel Josephson junctions that can be grown or processed at elevated temperatures. Also elevated synthesis temperatures improve the structural and electrical properties of Nb electrode layers that could potentially improve junction device performance. The refractory nature of Hf, HfO2 and Nb allow for the formation of flat, abrupt and thermally-stable interfaces. But the current Al-based barrier will have problems when using with high-temperature grown and high-quality Nb. So our work is aimed at using Nb grown at elevated temperatures to fabricate thermally stable Josephson tunnel junctions. As a junction barrier metal, Hf was studied and compared with the traditional Al-barrier material. We have proved that Hf-HfOx is a good barrier candidate for high-temperature synthesized Josephson junction. Hf deposited at 500 °C on Nb forms flat and chemically abrupt interfaces. Nb/Hf-HfOx/Nb Josephson junctions were synthesized, fabricated and characterized with different oxidizing conditions. The results of materials characterization and junction electrical measurements are reported and analyzed. We have improved the annealing stability of Nb junctions and also used high-quality Nb grown at 500 °C as the bottom electrode successfully. Adding a buffer layer or multiple oxidation steps improves the annealing stability of Josephson junctions. We also have attempted to use the Atomic Layer Deposition (ALD) method for the growth of Hf oxide as the junction barrier and got tunneling results. / Dissertation/Thesis / Ph.D. Materials Science and Engineering 2013

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19720号 / 工博第4175号 / 新制||工||1644(附属図書館) / 32756 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 川上 養一, 教授 田中 勝久, 准教授 掛谷 一弘 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第21370号 / 工博第4529号 / 新制||工||1705(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 竹内 繁樹, 教授 雨宮 尚之, 准教授 掛谷 一弘 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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Magnesium diboride MgB2 is an interesting material that was discovered to be a superconductor in 2001. It has a remarkably high critical temperature of 39 K which is much greater than was previously thought possible for a phonon-mediated superconductor. MgB2 was also the first material found to exhibit multiple gap superconductivity. It has two energy gaps, the pi gap with a value of 2.3 meV, and the sigma gap with a value of 7.1 meV. Both the high critical temperature and the multiple large energy gaps make MgB2 an attractive candidate for superconducting devices. While the initial discovery of MgB2 was accompanied by much excitement, the enthusiasm has mostly disappeared due to the lack of progress made in implementing MgB2 in practical devices. The aim of this thesis is to attempt to reinvigorate interest in this remarkable material through a study of a variety of practical superconducting devices made with MgB2 thin films grown by hybrid physical-chemical vapor deposition (HPCVD). Two different methods of fabricating MgB2 Josephson junctions are explored. The first is a sandwich type trilayer configuration with a barrier made by magnetron sputtered MgO. Junctions of this sort have been previously studied and implemented in a variety of devices. While they do show some attractive properties, the on-chip spread in critical current due to barrier non-uniformity was too high to be considered a viable option for use in many-junction devices. By developing a fabrication scheme which utilizes electron beam lithography, modest improvements were made in the on-chip parameter spread, and miniaturization of junction size yielded some insight into the non-uniform barriers. The second approach of creating MgB2 Josephson junctions utilized a planar geometry with a normal metal barrier created by irradiating nano-sized strips of the material with a focused helium ion beam. The properties of these junctions are investigated for different irradiation doses. This new technique is capable of producing high quality junctions and furthermore the parameter spread is greatly reduced as compared to the sandwich type junctions. While more research is necessary in order to increase the IcRn products, these junctions show promise for use in many-junction devices such as RSFQ circuits. Prior to this work, the largest substrates that could be coated with HPCVD grown MgB2 were 2" in diameter. A new chamber was designed and constructed which demonstrated the ability to coat substrates as large as 4". This scaled-up system was used to grow MgB2 films on 1 x 10 cm flexible substrates. A method of fabrication was developed which could pattern these 10 cm long samples into ribbon cables consisting of many high frequency transmission lines. This technology can be utilized to increase the cooling efficiency of cryogenic systems used for RSFQ systems which require many connections between low temperature and room temperature electronics. Finally, a method of producing MgB2 films with thicknesses as low as 8 nm was developed. This is achieved by first growing thicker films and using a low angle ion milling step to gradually reduce the film thickness while still maintaining well connected high quality films. A procedure was developed for fabricating meandering nanowires in these films with widths as low as 100 nm for use as superconducting nanowire single photon detectors (SNSPDs). A study of the transport properties of these devices is first presented. Measurements show low values of kinetic inductance which is ideal for high count rates in SNSPDs. The kinetic inductance measurements also yielded the first measurements of the penetration depth of MgB2 films in the ultra-thin regime. Devices made from these ultra-thin films were found to be photon sensitive by measurements made by our collaborators. / Physics

High-temperature superconductors belong to the group of strongly correlated materials. In these compounds, complex repulsive electron interactions and a large number of degrees of freedom lead to a rich variety of states of matter. Exotic phases like the pseudogap, charge-, spin- and pair-density waves, but also the remarkable phenomenon of superconductivity emerge, depending on doping level and temperature. However, up to now it is unclear what exactly causes these states, to what extent they are coexisting or competing, and where their borders in the phase diagram lie. A better understanding could help in finding the mechanism behind high-temperature superconductivity, but would also provide a better insight into the puzzling behavior of strongly correlated materials. This thesis tries to resolve some of these questions with focus on the underdoped pseudogap regime. Mesa structures of bismuth-based cuprate superconductors were studied using intrinsic tunneling, which allows spectroscopic characterizations of electronic density of states inside the material. A micro/nano fabrication method was developed to further reduce mesa areas into the sub square-micrometer range, in order to minimize the effect of crystal defects and measurement artifacts caused by heating induced by the measurement current. The comparison of energy scales in Bi-2201 and Bi-2212 cuprates shows that the pseudogap phenomenon is not connected to superconductivity, but possibly represents a competing spin-singlet order that is universal to all cuprates. The analysis of the upper critical field in Bi-2201 reveals a low anisotropy, which gives evidence of paramagnetically limited superconductivity. Furthermore, a new electrical doping method is demonstrated, which enables the reversible tuning the doping level of Bi-2212 and study a broad doping range upon a single sample. Using this method, two distinct critical points were observed under the superconducting dome in the phase diagram: one at the overdoped side, associated with the onset of the pseudogap and a metal to insulator transition, and one at optimal doping, associated with an enhanced "dressed" electron energy. Finally, a novel angular-dependent magnetotunneling technique is introduced, which allows for the separation of the superconducting and non-superconducting contributions to the pseudogap phenomenon. The method reveals that after an abrupt decay of the energy gap for T→Tc, weak superconducting correlations persist up to several tens of degrees above Tc.