Este projeto nasceu inserido num contexto de crescentes pesquisas em direção à construção de um cabedal de conhecimento acerca das ciências ambientais que tratam e estudam a dinâmica dos reservatórios de carbono e suas contribuições para o Efeito Estufa. Extrapolações de novos mapas digitalizados de solos sugerem que os espodossolos hidromórficos da Amazônia podem estar com uma contagem de carbono subestimada em até 12,3 Pg de C e trabalhos anteriores mostram que o carbono imobilizado neste perfil pode sofrer mineralização devido ao corte na rede de drenagem ou rebaixamento do nível freático, podendo assim contribuir em grande parte para o aumento de emissão dos Gases do Efeito Estufa. Nesta circunstância, coube a este trabalho, caracterizar espectroscopicamente, a matéria orgânica estocada em profundidade em 9 perfis de solo da região de São Gabriel da Cachoeira - AM, na floresta amazônica. Foram analisadas 127 amostras em quantidade de carbono e por fluorescência induzida por laser (FIL). A partir destas análises preliminares, foi possível selecionar 12 amostras de 2 perfis para análise mais detalhada através da extração das substâncias húmicas. Foram realizadas análises para obtenção da textura destes perfis, análise dos ácidos húmicos como relação C/N, espectroscopia de infravermelho com transformada de Fourier (FTIR), RMN de 13C no estado sólido, fluorescências bidimensional e tridimensional com aplicação do método estatístico análise dos fatores paralelos (PARAFAC) e também análise dos ácidos fúlvicos como carbono orgânico total (TOC), espectroscopia na região do ultra-violeta e visível e fluorescência 3D associada ao PARAFAC. Em geral, as amostras se dividiram em 3 grupos diferentes, onde a matéria orgânica em superfície se mostrou lábil e recente, a matéria orgânica nos horizontes B húmicos se mostraram com características recalcitrantes e a matéria orgânica contida nos horizontes onde existia água livre (lençol freático), se mostraram com características diferentes, indicando não serem tão jovens quanto as em superfície, porém mais jovens do que a armazenada no Bh, devido a uma possível migração por movimentos laterais do lençol freático. A correlação entre os resultados mostrou que a textura do solo é importante para o acúmulo da matéria orgânica e conseqüentemente sua humificação. Os resultados de fluorescência corroboraram a interpretação dos dados de RMN, FTIR e textura, apontando que o Perfil 4 (mais próximo ao rio) por ter C2 maior nos horizontes intermediários, contém maior quantidade de exsudatos microbianos frescos. Para o Perfil 5, que é uma mancha de Espodossolo dentro de um Latossolo e encontra-se mais longe do rio, os fluoróforos mais representativos são oriundos de anéis aromáticos mais antigos e conseqüentemente mais humificados, devido às maiores intensidades de C1 e C3. Vale ressaltar que esta interpretação se alinha com os resultados de datação do 14C desta região. Foi notório que a humificação ocorre a partir do começo do horizonte Bh e que seu acúmulo pode ocorrer tanto nos horizontes intermediários (Bh) quanto mais os profundos (úmidos). Dessa forma, pode-se concluir que uma drenagem excessiva das bordas dos rios nesta região que acumula carbono em profundidade, poderá expor a MO guardada e estocada a longo tempo, contribuindo para o aumento da temperatura global e por conseguinte catalisando um desequilíbrio no clima da sua maior reguladora no mundo: a Floresta Amazônica. / This project was born inserted in a context of increasing research towards building knowledge about environmental science that treat and study the dynamics of carbon reservoirs and their contribution to the greenhouse. Extrapolation of new digital soil maps suggests that Amazonian hydromorphic Spodosols may be with a carbon accounting underestimated by up to 12.3 Pg of C and previous work show that the carbon fixed in this profile may suffer mineralization due to the cut in the drainage network or lowering of the water level and can contribute largely to the increased emission of greenhouse gas. In this circumstance, it was instructed to this work, the spectroscopic characterization, of the stored organic matter in depth at 9 soil profiles of São Gabriel da Cachoeira - AM, in the Amazon rainforest. 127 samples were analyzed for amount of carbon and laser-induced fluorescence (LIF). From these preliminary analyzes, it was possible to select 12 samples of 2 profiles for humic substances extraction and further detailed analysis. Analyzes were conducted to obtain the texture of these profiles, analysis of humic acids as C/N ratio, Fourier Transform Infrared Spectroscopy (FTIR), solid state 13C NMR, two and three dimensional fluorescence with applying of the Parallel factors analysis (PARAFAC) statistical method and also fulvic acid analysis as Total Organic Carbon (TOC), ultra-violet and visible region spectroscopy and 3D fluorescence associated with PARAFAC. In general, the samples were divided into 3 different groups, wherein the surface organic matter evinced labile and recent. The B humic horizons organic matter proved recalcitrant characteristics and organic matter contained in horizons which had free water (groundwater), showed different characteristic, indicating they are not so young as the surface, but younger than stored in Bh, because of possible migration by lateral movements of the water table. The correlation between the results showed that soil texture is important for the accumulation of organic matter and therefore its humification. The fluorescence results confirmed the interpretation of the NMR, FTIR and texture datas, indicating that the profile 4 (closest to the river), presenting major C2 in intermediate horizons, contains larger amount of fresh microbial exudates. To profile 5, which is a Spodosol spot within a Ferrasol and is thither from the river, the most representative fluorophores came from older aromatic rings and therefore is more humified, due to higher intensities C1 and C3. It is noteworthy that this interpretation is in accord with the results of 14C dating of samples from this region. It was clear that the humification occurs from the beginning of the Bh horizon and their accumulation can occur both in the intermediate horizons (Bh) and in deeper (wet). Thus, it can be concluded that excessive drainage of the edges of rivers in this region that collects carbon in depth, may expose the OM stored for long time, contributing to increase the overall temperature and therefore catalyzing an imbalance in the climate of the biggest regulatory of it in the world: the Amazon rainforest.

Diploma thesis describes the design of an switched mode power supply with switching at zero voltage for driving the anode of Anode-layer type ion source. First aim of thesis is ion sources and specialy Anode-layer type of ion source in detail. Main aim of thesis are important aspects of the design of switching mode power supply, which comes later the detailed construction of an switched mode power supply with output voltage 2800 V at output power 2800 W.

Diese Arbeit beschäftigt sich mit der „First-Principles“ atomskaligen Modellierung der HfO2-basierten high-k-Gate-Isolatorschichten der Metalloxid-Halbleiter-Feldeffekttransistoren. Die theoretischen Untersuchungen basieren auf Dichtefunktionaltheorie und Nichtgleichgewicht-Greensche-Funktion-Formalismen. Eine der wichtigsten Eigenschaften eines Gate-Isolators ist der Wert seiner Bandlücke. Die Bandlücke eines gemischten Festkörpers aus SiO2 und ZrO2 oder HfO2 wird auf der Grundlage der „Generalized Quasi-Chemical“ Approximation in Kombination mit dem „Cluster Expansion“ Ansatz berechnet. Zu diesem Zweck wurde Dichtefunktionaltheorie für die Berechnung der Eigenschaften verschiedener Konfigurationen möglicher Elementarzellen durchgeführt. Es wurde ein fast linearer Verlauf für die Bandlücke eines aus SiO2 und HfO2 gemischten Festkörpers berechnet. Im Vergleich zu dem üblichen SiO2 Gate-Isolator, haben die high-k-Gate-Isolatoren eine höhere Defektdichte, die hauptsächlich aus Sauerstoffleerstellen bestehen. Dies führt zu mehreren Problemen, wie zum Beispiel höherer Leckstrom, Schwellenspannungsverschiebung und Degradation des Gateoxids. Daher wurde eine umfassende Untersuchung der verschiedenen Eigenschaften von Sauerstofffehlstellen in HfO2 durchgeführt, indem wichtige Parameter wie zum Beispiel die Formationsenergien und die Lage der Defektniveaus in der Bandlücke berechnet wurden. Es wurde durch die theoretischen Berechnungen gezeigt, dass die schädlichen Auswirkungen von Sauerstofffehlstellen durch die Einführung von Lanthan-Atomen in dem HfO2 Kristallgitter teilweise zu verringern sind. Energetisch gesehen bevorzugen die Lanthan-Atome die Hf-Gitterplätze in der Nachbarschaft einer Sauerstofffehlstelle und führen dadurch zu der Passivierung durch Sauerstoffleerstelle induzierten Defektniveaus. Die high-k-Isolatorschicht in den heutigen Transistoren besteht aus drei Schichten: einem Metallgate, einer HfO2-Schicht als Haupt-Gate-Isolator und einer sehr dünnen SiO2 Übergangsschicht zwischen Gateoxid und Si. Die Einführung eines Metallgates führt zu einigen Problemen bei der Einstellung einer geeigneten Schwellenspannung in den Transistoren. Theoretische Berechnungen in einer komplexen Modellstruktur von der Si/SiO2/HfO2-Grenzfläche zeigen, dass die dotierten Lanthan-Atome energetisch die SiO2/HfO2-Grenzfläche bevorzugen, was wiederum ein Dipolmoment an der Grenzfläche erzeugt. Dieses Dipolmoment kann verwendet werden, um die richtige Schwellenspannung wieder einzustellen. Schließlich wird in den experimentellen Messungen festgestelltes progressives Degradationsverhalten von high-k-Gate-Isolatoren mit einem theoretischen Modell erklärt. Dieses Modell basiert auf ab-initio-Berechnungen und zeigt, wie die Erzeugung geladener Sauerstoffleerstellen und deren Migration unter der angelegten Gatespannung zu einer progressiven Erhöhung des Leckstroms und folglich zu einer Degradation der Isolatorschicht führt.:List of Figures 7 List of Tables 9 List of Symbols 10 List of Abbreviations 11 Chapter 1: Introduction 12 Chapter 2: Theory of Atomic-Scale First-Principles Calculations 15 2.1 Theoretical methods 15 2.2 Density functional theory 17 2.3 Non-equilibrium Green’s function formalism 23 Chapter 3: Calculations for Bulk High-k Materials 27 3.1 Bulk high-k materials 27 3.2 Crystalline insulators 27 3.3 Solid solutions 29 3.3.1 Cluster expansion approach 30 3.3.2 Band gap and bowing parameter 33 3.3.3 Calculation of internal stress 40 3.4 Leakage current 41 Chapter 4: Defects in Bulk High-k Materials 43 4.1 Defects in high-k gate dielectrics 43 4.2 Oxygen vacancies in monoclinic HfO2 44 4.2.1 Neutral oxygen vacancies 44 4.2.2 Charged oxygen vacancies 46 4.3 Hybrid functional 50 4.4 Double oxygen vacancies 56 4.5 Interaction of oxygen vacancies with La-doping 61 4.5.1 La doping in m-HfO2 61 4.5.2 Complex LaHfVO defects 64 Chapter 5: Interface Properties of High-k Gate Stack 72 5.1 high-k gate-stack 72 5.1.1 Atomic-scale model structure for a high-k gate-stack 72 5.1.2 Electronic structure 74 5.1.3 Leakage current 76 5.2 Band offset 80 5.3 Threshold voltage engineering with La doping 84 Chapter 6: Degradation of the High-k Gate Stack 90 6.1 Reliability issues in high-k gate-stack 90 6.2 Calculations and experimental methods 91 6.3 Leakage current 92 6.4 Defect generation 100 6.5 Explaining progressive SILC in high-k dielectrics 102 Chapter 7: Conclusions 104 Bibliography 106 Selbständigkeitserklärung 119 Danksagung 120 Lebenslauf 121 Veröffentlichungen 122 / This thesis deals with the first-principles atomic-scale modeling of the HfO2-based high-k gate-insulator layer of the metal-oxide-semiconductor field-effect transistors. The theoretical investigations are based on density functional theory and non-equilibrium Green's function formalisms. One of the important properties of the gate insulator is the value of its band gap. The band gap of amorphous solid mixtures of SiO2 and ZrO2 or HfO2 is calculated based on generalized quasi-chemical approximation combined with a cluster expansion approach, by performing density functional calculations on different configurations of possible unit cells. An almost linear variation of the band gap is obtained for solid mixtures of SiO2 and HfO2. One drawback of the high-k gate-insulator, comparing to the standard SiO2, is high density of defects, particularly oxygen vacancies, which leads to several problems such as enhancement of the leakage current, threshold voltage instability, and degradation of the gate-oxide. A comprehensive investigation of different properties of oxygen vacancies in HfO2 is conducted by the calculation of formation energies and induced trap levels. It is shown based on theoretical calculations that the harmful effects of oxygen vacancies can be partially healed by introducing lanthanum atoms into the defected HfO2 crystal. Lanthanum atoms energetically prefer to occupy Hf lattice sites close to the oxygen vacancies and passivate the induced defect levels. The state-of-the-art high-k gate-stacks consist of a metal-gate on a HfO2 layer, as the main part of the gate insulator, and a very thin SiO2 intermediate layer between high-k material and Si. The introduction of a metal-gate raises some problem in the adjustment of an appropriate threshold voltage. Theoretical calculations in a complex model structure of the Si/SiO2/HfO2 interface reveals that the lanthanum atoms energetically prefer to stay at the SiO2/HfO2 interface, which in turn results in a dipole moment. This dipole moment can be employed to adjust the threshold voltage in high-k/metal-gate stacks. Finally, a theoretical model, which can quiet well explain the experimental measurements, is introduced for the progressive degradation of the high-k gate-insulators. This model is based on ab-initio calculations and shows how the generation of charged vacancies and their migration under the applied gate voltage leads to the progressive enhancement of the leakage current and consequently to the degradation of the insulator layer.:List of Figures 7 List of Tables 9 List of Symbols 10 List of Abbreviations 11 Chapter 1: Introduction 12 Chapter 2: Theory of Atomic-Scale First-Principles Calculations 15 2.1 Theoretical methods 15 2.2 Density functional theory 17 2.3 Non-equilibrium Green’s function formalism 23 Chapter 3: Calculations for Bulk High-k Materials 27 3.1 Bulk high-k materials 27 3.2 Crystalline insulators 27 3.3 Solid solutions 29 3.3.1 Cluster expansion approach 30 3.3.2 Band gap and bowing parameter 33 3.3.3 Calculation of internal stress 40 3.4 Leakage current 41 Chapter 4: Defects in Bulk High-k Materials 43 4.1 Defects in high-k gate dielectrics 43 4.2 Oxygen vacancies in monoclinic HfO2 44 4.2.1 Neutral oxygen vacancies 44 4.2.2 Charged oxygen vacancies 46 4.3 Hybrid functional 50 4.4 Double oxygen vacancies 56 4.5 Interaction of oxygen vacancies with La-doping 61 4.5.1 La doping in m-HfO2 61 4.5.2 Complex LaHfVO defects 64 Chapter 5: Interface Properties of High-k Gate Stack 72 5.1 high-k gate-stack 72 5.1.1 Atomic-scale model structure for a high-k gate-stack 72 5.1.2 Electronic structure 74 5.1.3 Leakage current 76 5.2 Band offset 80 5.3 Threshold voltage engineering with La doping 84 Chapter 6: Degradation of the High-k Gate Stack 90 6.1 Reliability issues in high-k gate-stack 90 6.2 Calculations and experimental methods 91 6.3 Leakage current 92 6.4 Defect generation 100 6.5 Explaining progressive SILC in high-k dielectrics 102 Chapter 7: Conclusions 104 Bibliography 106 Selbständigkeitserklärung 119 Danksagung 120 Lebenslauf 121 Veröffentlichungen 122

In automatic speech recognition systems (ASRs), training is a critical phase to the system?s success. Communication media, either analog (such as analog landline phones) or digital (VoIP) distort the speaker?s speech signal often in very complex ways: linear distortion occurs in all channels, either in the magnitude or phase spectrum. Non-linear but time-invariant distortion will always appear in all real systems. In digital systems we also have network effects which will produce packet losses and delays and repeated packets. Finally, one cannot really assert what path a signal will take, and so having error or distortion in between is almost a certainty. The channel introduces an acoustical mismatch between the speaker's signal and the trained data in the ASR, which results in poor recognition performance. The approach so far, has been to try to undo the havoc produced by the channels, i.e. compensate for the channel's behavior. In this thesis, we try to characterize the effects of different transmission media and use that as an inexpensive and repeatable way to train ASR systems.