Ein viel diskutiertes Thema unserer Zeit ist die Zukunft der Energiegewinnung und Speicherung. Dabei nimmt die Nanowissenschaft eine bedeutende Rolle ein; sie führt zu einer Effizienzsteigerung bei der Speicherung und Gewinnung durch bereits bekannte Materialien und durch neue Materialien. In diesem Zusammenhang ist die Chemie Wegbereiter für Nanomaterialien. Allerdings führen bisher die meisten bekannten Synthesen von Nanopartikeln zu undefinierten Partikeln. Eine einfache, kostengünstige und sichere Synthese würde die Möglichkeit einer breiten Anwendung und Skalierbarkeit bieten. In dieser Arbeit soll daher die Darstellung der einfachen Synthese von Mangannitrid-, Aluminiumnitrid-, Lithiummangansilicat-, Zirkonium-oxinitrid- und Mangancarbonatnanopartikel betrachtet werden. Dabei werden die sogenannte Harnstoff-Glas-Route als eine Festphasensynthese und die Solvothermalsynthese als typische Flüssigphasensynthese eingesetzt. Beide Synthesewege führen zu definierten Partikelgrößen und interessanten Morphologien und ermöglichen eine Einflussnahme auf die Produkte. Im Falle der Synthese der Mangannitridnanopartikel mithilfe der Harnstoff-Glas-Route führt diese zu Nanopartikeln mit Kern-Hülle-Struktur, deren Einsatz als Konversionsmaterial erstmalig vorgestellt wird. Mit dem Ziel einer leichteren Anwendung von Nanopartikeln wird eine einfache Beschichtung von Oberflächen mit Nanopartikeln mithilfe der Rotationsbeschichtung beschrieben. Es entstand ein Gemisch aus MnN0,43/MnO-Nanopartikeln, eingebettet in einem Kohlenstofffilm, dessen Untersuchung als Konversionsmaterial hohe spezifische Kapazitäten (811 mAh/g) zeigt, die die von dem konventionellen Anodenmaterial Graphit (372 mAh/g) übersteigt. Neben der Synthese des Anodenmaterials wurde ebenfalls die des Kathodenmaterials Li2MnSiO4-Nanopartikeln mithilfe der Harnstoff-Glas-Route vorgestellt. Mithilfe der Synthese von Zirkoniumoxinitridnanopartikeln Zr2ON2 kann eine einfache Einflussnahme auf das gewünschte Produkt durch die Variation derReaktionsbedingungen, wie Harnstoffmenge oder Reaktionstemperatur, bei der Harnstoff-Glas-Route demonstriert werden. Der Zusatz von kleinsten Mengen an Ammoniumchlorid vermeidet, dass sich Kohlenstoff im Endprodukt bildet und führt so zu gelben Zr2ON2-Nanopartikeln mit einer Größe d = 8 nm, die Halbleitereigen-schaften besitzen. Die Synthese von Aluminiumnitridnanopartikeln führt zu kristallinen Nanopartikeln, die in eine amorphe Matrix eingebettet sind. Die Solvothermalsynthese von Mangancarbonatnanopartikel lässt neue Morphologien in Form von Nanostäbchen entstehen, die zu schuppenartigen sphärischen Überstrukturen agglomeriert sind. / The development of new methods toward alternative clean energy production and efficient energy storage is a hot topic nowadays. In this context nanoscience has an important role to find suitable ways of increasing the efficiency of storage and production of energy of already known materials and new materials. However, until now the most well-known syntheses of MnN0,43 and Zr2ON2 nanoparticles lead to undefined particles. A simple, cheap and safe synthesis would offer the possibility of broader applications and scalability. We herein present the so-called urea-glass route which is used as a sol-gel process. This synthetic route leads to well-defined particle sizes, novel particle morphologies and allows the tailoring of the desired products. In the case of the synthesis of manganese nitride nanoparticles (MnN0,43), nanoparticles with a core-shell structure are obtained, their use as conversion materials in batteries is first introduced. On the other hand, the formation of zirconium oxynitride nanoparticles (Zr2ON2) can be easily influenced by varying the reaction conditions such as the amount of urea or the reaction temperature. The addition of small amounts of salt prevents the formation of carbon in the final product, leading to yellow Zr2ON2 nanoparticles with a size of d = 8 nm which show semiconductor behavior.

In vapour phase deposition, the knowledge and control of homogeneous and heterogeneous reactions in connection to precursor design may lead to the deposition of the desired material; structure or phase. This thesis is a document attempting to increase the knowledge of film growth in the B-N system. In the present work, surface processes like adsorption, abstraction, migration and nucleation have been modelled on an atomic scale using density functional theory (DFT). The systems studied are mainly cubic and hexagonal boron nitride surfaces ((c-BN) vs. (h-BN)), but also the α-boron (001) surface. It has been shown that DFT and a cluster approach is a reliable tool in modelling boron nitride surfaces and surface processes, provided that certain functionals, basis sets and geometrical constraints are used. By using surface stabilisers such as H species in an electron- or radical-rich environment, it has been shown that i) the structure of cubic boron nitride surfaces can be sustained, and ii) c-BN may nucleate on the h-BN (001) basal plane. Furthermore, the nucleation of c-BN from arbitrary and experimental growth species is energetically preferable over a continuous growth of h-BN on the h-BN (001) edges. An atomic layer deposition (ALD) process for boron nitride was developed. It resulted in turbostratic (t-BN), transparent, well-adherent and almost atomically smooth BN films. However, with the cubic phase of boron nitride absent in the ALD films, more effort needs to be put into both the theoretical and the experimental branches of this field of science.

In science and technology there is a steadily increased demand of new materials and new materials production processes since they create new application areas as well as improved production technology and economy. This thesis includes development and studies of a chemical vapour deposition (CVD) process for growth of thin films of the metastable material copper nitride, Cu3N, which is a semiconductor and decomposes at around 300 oC. The combination of these properties opens for a variety of applications ranging from solar cells to sensor and information technology. The CVD process developed is based on a metal-organic compound copper hexafluoroacetylacetonate, Cu(hfac)2 , ammonia and water and was working at about 300 oC and  5 Torr. It was found that a small amount of water in the vapour increased the growth rate considerably and that the phase content, film texture, chemical composition and morphology were strongly dependent on the deposition conditions. In-situ oxygen doping during the CVD of Cu3N to an amount of 9 atomic % could also be accomplished by increasing the water concentration in the vapour. Oxygen doping increases the band gap of the material as well as the electrical resistivity and changes the stability. The crystal structure of Cu3N is very open and contains several sites which can be used for doping. Different spectroscopic techniques like X-ray photoelectron spectroscopy, Raman spectroscopy and near edge X-ray absorption fine structure spectroscopy were used to identify the oxygen doping site(s) in Cu3N. Besides the properties, the oxygen doping also affected the morphology and texture of the films. By combining thin layers of different materials several properties can be optimized at the same time. It has been demonstrated in this thesis that multilayers, composed of alternating Cu3N and Cu2O layers, i.e. a metastable and a stable material, could be grown by CVD technique. However, the stacking sequence affected the texture, morphology and chemical composition. The interfaces between the different layers were sharp and no signs of decomposition of the initially deposited metastable Cu3N layer could be detected.

The explosive development of the telecom industry and in particular wireless and mobile communications in recent years has lead to a rapid development of new component and fabrication technologies to continually satisfy the mutually exclusive requirements for better performance and miniaturization on the one hand and low cost on the other. A fundamental element in radio communications is time and frequency control, which in turn is achieved by high performance electro-acoustic components made on piezoelectric single crystalline substrates. The latter, however, reach their practical limits in terms of performance and cost as the frequency of operation reaches the microwave range. Thus, the thin film electro-acoustic technology, which uses thin piezoelectric films instead, has been recently developed to alleviate these deficiencies. This thesis explores and addresses a number of issues related to thin film synthesis on the one hand as well as component design and fabrication on other. Specifically, the growth of highly c-axis textured AlN thin films has been studied and optimized for achieving high device performance. Perhaps, one of the biggest achievements of the work is the development of a unique process for the deposition of AlN films with a mean c-axis tilt, which is of vital importance for the fabrication of resonators operating in contact with liquids, i.e. biochemical sensors. This opens the way for the development of a whole range of sensors and bio-analytical tools. Further, high frequency Lamb wave resonators have been designed, fabricated and evaluated. Performance enhancement of FBAR devices is also addressed, e.g. spurious mode suppression, temperature compensation, etc. It has been demonstrated, that even without temperature compensation, shear mode resonators operating in a liquid still exhibit an excellent performance in terms of Q (200) and coupling (~1.8%) at 1.2 GHz, resulting in a mass resolution better than 2 ng cm-2 in water, which excels that of today’s quartz sensors.

Double layer capacitors owe their large capacitance to high specific surface area carbon-based electrode materials adhered to a current collector via an adhesive. However, recent studies attribute greater electrical energy storage capacity to transition metal oxides/nitrides: a new generation of electrode materials for use in super-capacitors with mixed double-layer and pseudo-capacitive properties. Solution precursor plasma spray deposition is a technique that allows coatings to be fabricated with fine grain sizes, high porosity levels, and high surface area; characteristics ideal for application as super-capacitor electrodes. This investigation established conditions for deposition of porous, high specific surface area α-MoO3. It further identified a two-step temperature-programmed reaction for topotactic phase transformation of the α-MoO3 deposits into high specific surface area molybdenum nitrides of higher conductivity and higher electrochemical stability window. The electrochemical behavior of molybdenum oxide/nitride deposits was also studied in order to assess their potential for use in super-capacitors.

Double layer capacitors owe their large capacitance to high specific surface area carbon-based electrode materials adhered to a current collector via an adhesive. However, recent studies attribute greater electrical energy storage capacity to transition metal oxides/nitrides: a new generation of electrode materials for use in super-capacitors with mixed double-layer and pseudo-capacitive properties. Solution precursor plasma spray deposition is a technique that allows coatings to be fabricated with fine grain sizes, high porosity levels, and high surface area; characteristics ideal for application as super-capacitor electrodes. This investigation established conditions for deposition of porous, high specific surface area α-MoO3. It further identified a two-step temperature-programmed reaction for topotactic phase transformation of the α-MoO3 deposits into high specific surface area molybdenum nitrides of higher conductivity and higher electrochemical stability window. The electrochemical behavior of molybdenum oxide/nitride deposits was also studied in order to assess their potential for use in super-capacitors.

<p>The electronic structures of the nucleobases, 5-fluorouracil compounds, DNA, metallic DNA, and samples of boron nitride are investigated. Soft X-ray absorption (XAS) and emission (XES) spectroscopy using synchrotron radiation are used to probe the unoccupied and occupied partial densities of electronic states, respectively. Hartree-Fock and density functional theory calculations have been included to compare with experimental results.</p> <p>A systematic approach to understanding the complicated electronic structure of DNA and metallic DNA systems is to initially examine smaller components. Detailed experiment and theory for both absorption and emission spectroscopy was. performed for the nucleobases and 5-fluorouracil compounds. Main transitions in the XAS and XES spectra are identified. X-ray spectroscopy has proven to be extremely sensitive to changes in the environment of various DNA samples. The local chemical environment plays an important role in determining the electronic structure of DNA. In agreement with previous results indicating metallic DNA is more efficient at the transfer of electrons than DNA, XES measurements reveal that there are a higher number of charge carriers in the metallic system. Both liquid and powder samples of (Ni)·M-DNA are found to have a high spin Ni(II) configuration. The drying process significantly alters the electronic structure of the metallic DNA sample. A comparison of high quality single crystals and thin films of boron nitride found that differences between the electronic structures of the nanocrystalline films and the single crystal samples exist, and the surface roughness of the substrate plays an important role in determining the structure of the resulting deposited film.</p>

<p>The electronic structures of the nucleobases, 5-fluorouracil compounds, DNA, metallic DNA, and samples of boron nitride are investigated. Soft X-ray absorption (XAS) and emission (XES) spectroscopy using synchrotron radiation are used to probe the unoccupied and occupied partial densities of electronic states, respectively. Hartree-Fock and density functional theory calculations have been included to compare with experimental results.</p> <p>A systematic approach to understanding the complicated electronic structure of DNA and metallic DNA systems is to initially examine smaller components. Detailed experiment and theory for both absorption and emission spectroscopy was. performed for the nucleobases and 5-fluorouracil compounds. Main transitions in the XAS and XES spectra are identified. X-ray spectroscopy has proven to be extremely sensitive to changes in the environment of various DNA samples. The local chemical environment plays an important role in determining the electronic structure of DNA. In agreement with previous results indicating metallic DNA is more efficient at the transfer of electrons than DNA, XES measurements reveal that there are a higher number of charge carriers in the metallic system. Both liquid and powder samples of (Ni)·M-DNA are found to have a high spin Ni(II) configuration. The drying process significantly alters the electronic structure of the metallic DNA sample. A comparison of high quality single crystals and thin films of boron nitride found that differences between the electronic structures of the nanocrystalline films and the single crystal samples exist, and the surface roughness of the substrate plays an important role in determining the structure of the resulting deposited film.</p>

In this research the growth of InN epilayers by high-pressure chemical vapor deposition (HPCVD) and structural, optical properties of HPCVD grown InN layers has been studied. We demonstrated that the HPCVD approach suppresses the thermal decomposition of InN, and therefore extends the processing parameters towards the higher growth temperatures (up to 1100K for reactor pressures of 15 bar, molar ammonia and TMI ratios around 800, and a carrier gas flow of 12 slm). Structural and surface morphology studies of InN thin layers have been performed by X-ray diffraction, low energy electron diffraction (LEED), auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS) and atomic force microscopy (AFM). Raman spectroscopy, infrared reflection, transmission, photoluminescence spectroscopy studies have been carried out to investigate the structural and optical properties of InN films grown on sapphire and GaN/sapphire templates. InN layers grown on a GaN (0002) epilayer exhibit single-phase InN (0002) X-ray diffraction peaks with a full width at half maximum (FWHM) around 200 arcsec. Auger electron spectroscopy confirmed the cleanliness of the surface, and low energy electron diffraction yielded a 1×1 hexagonal pattern indicating a well-ordered surface. The plasmon excitations are shifted to lower energies in HREEL spectra due to the higher carrier concentration at the surface than in the bulk, suggesting a surface electron accumulation. The surface roughness of samples grown on GaN templates is found to be smoother (roughness of 9 nm) compared to the samples grown on sapphire. We found that the deposition sometimes led to the growth of 3 dimensional hexagonal InN pyramids. Results obtained from Raman and IR reflectance measurements are used to estimate the free carrier concentrations, which were found in the range from mid 10^18 cm-3 to low 10^20 cm-3. The optical absorption edge energy calculated from the transmission spectra is 1.2 eV for samples of lower electron concentration. The Raman analysis revealed a high-quality crystalline layer with a FWHM for the E2(high) peak around 6.9 cm^-1. The results presented in our study suggest that the optimum molar ratio might be below 800, which is due to the efficient cracking of the ammonia precursor at the high reactor pressure and high growth temperature.

The objective of this project is to establish a new technology to grow high quality GaN based material by nano selective area growth (NSAG). The motivation is to overcome the limit of the conventional growth method, which yield a high density of dislocation in the epitaxial layer. A low dislocation density in the epitaxial layer is crucial for high performance and high efficiency devices. This project focuses on growth and material characterization of GaN based nanostructures (nanodots and nanostripes) grown using the NSAG method that we developed. NSAG, with a precise control of diameter and position of nanostructures opens the door to new applications such as: 1) single photon source, 2) photonic crystal, 3) coalescence of high quality GaN template, and 4) novel nanodevices.