Grâce à un long temps de vie de spin, le silicium est un matériau prometteur pour l'électronique de spin. Mais les approches classiques d'étude de la dynamique de spin basées sur la luminescence polarisée ne peuvent pas être utilisées dans ce matériau à cause du faible couplage spin-orbite et du gap indirect. Dans ce travail, nous avons étudié la polarisation de spin des électrons de conduction créée en condition de pompage optique par spectroscopie de photoémission. La surface du silicium est activée en affinité négative par dépôt de césium et d'oxygène de sorte que les électrons photoexcités avec une énergie proche du gap peuvent émis dans le vide. Nous utilisons un laser accordable qui permet de mesurer systématiquement le spectre de polarisation pour des énergies d'excitation allant du seuil d'absorption jusqu'à la bande Gamma2- au-dessus du gap direct. Nous avons obtenus les spectres de polarisation à partir de couches minces SOI d'épaisseurs différentes. A partir de ces résultats, nous déterminons la valeur de paramètres importants de la structure de bande comme le gap direct ou l'énergie du couplage spin-orbite. Cependant, contrairement aux prédictions, lorsque l'épaisseur de la couche de silicium diminue jusqu'à des valeurs inférieures à la longueur de diffusion de spin, la polarisation en spin des électrons émis reste proche de zéro (-0.4%), remettant en cause l'interprétation directe des valeurs théoriques de la polarisation initiale égale à -20%. Une approche théorique a donc été développée sur la base d'un modèle ab initio de structure de bande pour déterminer les spectres de polarisation en spin. Ces calculs sont encore en cours, mais les résultats déjà obtenus sur la structure électronique du silicium sous contrainte indiquent une piste intéressante pour les études futures.

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There has been much work on electron emission. It has lead to the concept of the photon and new electron sources for imaging such as electron microscopes and the rst formulation of holographic reconstructions [1-6]. Analytical derivations are important to gain physical insight into the problem of developing better electron sources. However, to date, such formulations have su ered by a number of approximations that have masked important physics. In this thesis, a new approach is provided that solves the Schrodinger wave equation for photoemission from a single atom tungsten tip barrier or more generally, for photoemission from a Schottky triangular barrier potential, with or without image potential e ects. We describe the system, then introduce the mathematical derivation. We conclude with the applications of the theory.

There has been much work on electron emission. It has lead to the concept of the photon and new electron sources for imaging such as electron microscopes and the rst formulation of holographic reconstructions [1-6]. Analytical derivations are important to gain physical insight into the problem of developing better electron sources. However, to date, such formulations have su ered by a number of approximations that have masked important physics. In this thesis, a new approach is provided that solves the Schrodinger wave equation for photoemission from a single atom tungsten tip barrier or more generally, for photoemission from a Schottky triangular barrier potential, with or without image potential e ects. We describe the system, then introduce the mathematical derivation. We conclude with the applications of the theory.

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J'ai étudié les interfaces semi-conducteur organiques/ferromagnétique par la diffusion des électrons et la photoémission résolue en spin. Dans la première partie, un comportement inattendu de la réflexion d'électrons dépendante de spin à ces interfaces est observé. En fait, une couverture sous-monocouche des molécules organiques rend l’amplitude de réflexion d’électrons indépendante de spin, c.à.d. que la réflectivité ainsi que la phase de réflexion devient indépendante de l'orientation du spin des électrons incidents. Bien que je ne sois pas en mesure d'identifier la cause de ce phénomène, je montre qu'il s'agit d'un phénomène très général qui est indépendante de l'énergie des électrons primaires, du choix du substrat ferromagnétique, du choix de la molécule organique, et de l'orientation de la polarisation initiale. Il n'est pas du à un changement de l’aimantation de surface, à une dépolarisation des électrons primaires, ou à une interaction directe des molécules avec le substrat ferromagnétique. En outre, la théorie ne prédit pas les résultats expérimentaux et d'autres recherches sont donc nécessaires pour dévoiler la physique derrière ces observations. Dans la seconde partie de ma thèse, les expériences de photoémission résolue en spin sont réalisées au synchrotron SOLEIL. Le résultat principal est l'observation d'un état électronique induite par les molécules organiques près du niveau de Fermi qui est hautement polarisé en spin. Des mesures en fonction de l’épaisseur de la couche organique permettent d’identifier le caractère interfacial de cet état électronique. Enfin, ces résultats sont comparés avec des calculs théoriques effectués à l'institut. / I studied organic semiconductor/ferromagnet interfaces by characterizing them by spin-polarized electron scattering and photoemission spectroscopy experiments. In the first part, a completely unexpected behaviour of the spin-dependent electron reflection properties of these interfaces is observed. In fact, sub-monolayer coverage of the organic molecules makes the electron reflection amplitude independent of the spin, i.e. both the reflectivity and the reflection phase become independent of the spin orientation of the incident electrons. Although I am not able at the moment to identify the cause of this phenomenon, I show that it is a very general phenomenon which is independent of the energy of the primary electrons, the choice of the ferromagnetic substrate, the choice of the organic molecule, and of the orientation of the initial spin polarization. It is not due to a change of the surface magnetization, a depolarization of the primary electrons, or a direct interaction of the molecules with the ferromagnetic substrate. Moreover, theory does not predict so far the experimental results and further research is required to unveil the physics behind these observations. In the second part of my thesis, spin-resolved photoemission experiments have been performed at the synchrotron SOLEIL. The main result is the observation of a highly spin-polarized molecule-induced electronic state close to the Fermi level. Measurements as a function of the organic layer thickness allow us to determine the interfacial character of this electronic state. Finally, these results are compared with theoretical calculations performed at the institute.

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In this dissertation different van der Waals heterostructures such as graphene-MoS2 and MoTe2-MoS2 were prepared and characterized. In the first heterostructure, polycrystalline graphene was synthesized by chemical vapor deposition and transferred on top of MoS2 single crystal. In the second heterostructure, MoTe2 monolayers were deposited on MoS2 by molecular beam epitaxy. Characterization of graphene-MoS2 heterostructures was conducted by spin and angle resolve spectroscopy which showed that the electronic structure of the bulk MoS2 and graphene in this van der Waals heterostructures is modified. For MoS2 underneath the graphene, a band structure renormalization and spin polarization are observed. The band structure of MoS2 is modified because the graphene induces screening which shifts the Г-point ~150 meV to lower binding compared to the sample without graphene. The spin polarization is explained by the dipole arising from band bending which breaks the symmetry at the MoS2 surface. For graphene, the band structure at lower binding energy shows that the Dirac cone remains intact with no significant doping. Instead, away from the Fermi level the formation of several gaps in the pi-band due to hybridization with states from the MoS2 is observed. For the heterostructures made depositing monolayer of MoTe2 on MoS2, the morphology, structure and electronic structure were studied. Two dimensional growth is observed under tellurium rich growth conditions and a substrate temperature of 200 °C but formation of a complete monolayer was not achieved. The obtained MoTe2 monolayer shows a high density of the mirror-twins grain boundaries arranged in a pseudo periodic wagon wheel pattern with a periodicity of ~2.6 nm. These grain boundary are formed due to Te-deficiency during the growth. The defect states from these domain boundary pin the Fermi level in MoTe2 and thus determine the band alignment in the MoTe2-MoS2 heterostructures.

This thesis is concerned with the chemistry and physics of C(100) surfaces of diamond. The polished and cleaned C(100) surface is examined by surface microscopy (Atomic-force Microscopy), electron diffraction (Low-energy Electron Diffraction) and photoemission (X-ray Photoelectron Spectroscopy and Ultra-violet Photoelectron Spectroscopy). Results are presented on the presence of oxygen, nitrogen and hydrogen/deuterium on the C(100) surface. Finally, the valence band structure of diamond is probed by angle-resolved photoemission. We have confirmed by AFM that the grooves from the soft polishing process are present on a polished C(100) surface and found sporadic traces of hard polish on a surface polished in the soft polishing direction. XPS studies have verified heating cycles by electron beam bombardment as a suitable cleaning procedure for pure reconstructed C(100) surfaces. By allowing the crystal to cool slowly, the first experimental evidence of quarter-order LEED spots have been found, which suggest that buckled dimerisation might have occurred similar to those on Si(100) and Ge(100). We present the first experimental electron spectroscopy results for a nitrogen impurity in diamond by showing the N KLL Auger spectrum. An attempt to smooth a C(100) surface of diamond by an atomic hydrogen plasma did not succeed. AFM studies showed no evidence for the surface smoothing reported in other studies, but the results enable us to explain the different plasma published in the literature. The valence band of diamond is investigated by off-normal ARUPS. The features observed are consistent with possible transitions, which are determined using bulk band structure calculations and comparison with the experimental binding energies.