In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. The native defects are also studied on the (110) surfaces of InP, InAs, and InSb. Comparing the relative stability at the surface and in the bulk, it is concluded that the defects have a tendency to migrate to the surface. It is found that the cation vacancy is not stable, but decomposes into an anion antisite-anion vacancy complex. The surface charge accumulation in InAs is explained by complementary intrinsic doping by native defects and extrinsic doping by residual hydrogen. A technical investigation of the supercell treatment of defects is performed, testing existing correction schemes and suggesting a more reliable alternative. It is shown that the defect level of [2VCu-IIICu] in the solarcell-material CuIn1-xGaxSe2 leads to a smaller band gap of the ordered defect γ-phase, which possibly explains why the maximal efficiency for CuIn1-xGaxSe2 has been found for x=0.3 and not for x=0.6, as expected from the band gap of the α-phase. It is found that Zn diffuses via the kick-out mechanism in InP and GaP with activation energies of 1.60 eV and 2.49 eV, respectively. Explanations are found for the tendency of Zn to accumulate at pn-junctions in InP and to why a relatively low fraction of Zn is found on substitutional sites in InP. Finally, it is shown that the equilibrium solubility of dopants in semiconductors can be increased significantly by strategic alloying. This is shown to be due to the local stress in the material, and the solubility in an alloy can in fact be much higher than in either of the constituting elements. The equilibrium solubility of Zn in Ga0.9In0.1P is for example five orders of magnitude larger than in GaP or InP.

The complete and accurate thermodynamic and kinetic description of any systemis crucialfor understanding and predicting its properties. A particular interest is in systemsthat are used for some practical applications and have to be constantly improved usingmodification of their composition and structure. This task can be quite accuratelysolved at a fundamental level by density functional theory methods. Thesemethods areapplied to two practically important systems Fe-Cr and TiC-ZrC.The elastic properties of pure iron and substitutionally disordered Fe-Cr alloy are investigatedas a function of temperature and concentration using first-principles electronicstructurecalculations by the exact muffin-tin orbitals method. The temperature effectson the elastic properties are included via the electronic, magnetic, and lattice expansioncontributions. It is shown that the degree of magnetic order in both pure iron andFe90Cr10 alloy mainly determines the dramatic change of the elastic anisotropy of thesematerials at elevated temperatures. A peculiarity in the concentration dependence ofthe elastic constants in Fe-rich alloys is demonstrated and related to a change in theFermi surface topology.A thermodynamic model for the magnetic alloys is developed from first principles andapplied to the calculation of bcc Fe-Cr phase diagram. Various contributions to the freeenergy (magnetic, electronic, and phonon) are estimated and included in the model. Inparticular, it is found that magnetic short range order effects are important just abovethe Curie temperature. The model is applied for calculating phase equilibria in disorderedbcc Fe-Cr alloys. Model calculations reproduce a feature known as a Nishizawahorn for the Fe-rich high-temperature part of the phase diagram.The investigation of the TiC-ZrC system includes a detailed study of the defect formationenergies and migration barriers of point defects and defect complexes involvedin the diffusion process. It is found, using ab initio atomistic simulations of vacancymediateddiffusion processes in TiC and ZrC, that a special self-diffusion mechanism isoperative for metal atom diffusion in sub-stoichiometric carbides. It involves a noveltype of a stable point defect, a metal vacancy ”dressed” in a shell of carbon vacancies.It is shown that this vacancy cluster is strongly bound and can propagate through thelattice without dissociating. / <p>QC 20120604</p> / HERO-M

La0.6Ca0.4Mn0.8Ni0.2O3-, La0.6Ca0.4Mn0.8Fe0.2O3- und La0.75Ca0.25Mn0.5Fe0.5O3-Volumenmaterialien wurden im potentiometrischen Messaufbau bereits erfolgreich auf ihre NO-Sensitivität getestet. Keramischen Nanomaterialien werden generell eine Reihe neuer oder verbesserter Eigenschaften (verbessertes Sinterverhalten, erhöhte NOx-Sensitivität, höhere Leitfähigkeit) zugesprochen. La0.6Ca0.4Mn0.8Ni0.2O3, La0.6Ca0.4Mn0.8Fe0.2O3 und La0.75Ca0.25Mn0.5Fe0.5O3 wurden mittels PVA/Sucrose-Methode, Aktivkohlemethode und Fällungssynthese als Nanomaterialien sowie mit Festkörperreaktion als Volumenmaterialien dargestellt und mit typischen Charakterisierungsmethoden untersucht. Die Materialien wurden in verschiedenen Schichtdicken auf YSZ-Substrate aufgetragen und potentiometrisch sowie impedanzspektroskopisch auf ihre NO-Sensitivität und die Querempfindlichkeit gegenüber NO2 und Propylen geprüft. Potentiometrische Messungen im NO-Gasstrom ergeben eine Abhängigkeit der NO-Sensitivität von der Partikelgröße, der Schichtdicke und der Beschichtungsmethode. Impedanzspektroskopische Messungen an beidseitig beschichteten YSZ-Substraten zeigen ebenfalls eine Abhängigkeit des Zellwiderstands von der NO-Konzentration und der Partikelgröße. Die Nanomaterialien zeigen bei unterschiedlichen Sauerstoffpartialdrücken im untersuchten Temperaturbereich (300°C bis 850°C) höhere Leitfähigkeiten als die Volumenmaterialien gleicher Zusammensetzung. Dieses Verhalten wird mit dem höheren Sauerstoffaustausch der Nanomaterialien in Verbindung gebracht, der zur Erzeugung zusätzlicher Defekte in der Kristallstruktur führt. Die Nanostruktur und somit eine entsprechend hohe Leitfähigkeit bleiben bei hohen Sintertemperaturen (T > 1000°C), die der Herstellung gasdichter Presslinge dienen, erhalten. XANES- und Photoelektronenspektroskopie wurden verwendet, um die Punktdefekte zu definieren.

This thesis explores multiscale approaches to describe structural and chemical defects in metals. Particular emphasis is placed on investigating processes involving grain boundaries (GBs) in combination with impurity and vacancy defects. The defects and their interactions are calculated to very high accuracy using density functional theory (DFT) and connected to the macroscopic behavior within the two multiscale formalisms presented here. We begin with a sequential approach to address chemical embrittlement of nickel by sulfur impurities. Effects at both a \(\Sigma 5 (012)\) symmetric tilt GB and in the bulk are studied by considering competing mechanisms for ductile and brittle behavior. For the bulk, this takes the form of Rice’s theory, where the ratio of the surface and unstable stacking energy is used as a measure of ductility. This is generalized to the GB by considering GB sliding (GBS) and intergranular decohesion. Clear evidence that chemical embrittlement of nickel by sulfur is a GB driven effect is found. Next, a concurrent multiscale approach is described. A small region, containing the defects, is treated with Kohn-Sham DFT and coupled to the bulk, described with the embedded atom method. We apply this novel method to elucidate the chemical embrittlement of a copper \(\Sigma 5 (012)\) symmetric tilt GB. Intergranular decohesion for three substitutional impurities, bismuth, lead and silver, is investigated by considering the work of separation \((W_s)\) and the tensile strength \((\sigma_t)\). Bismuth and lead show a significant decrease in \(W_s\) and \(\sigma_t\), consistent with embrittlement, whilst silver has only a minor effect. Then, the concurrent multiscale method is applied to the process of GBS in copper. It is found that the resistance against sliding increases significantly for bismuth, lead and silver impurities. The underlying mechanisms for this increase are found to be dominated by size effects for bismuth and lead. For silver, chemical effects are of greater importance. Similar results are found for the underlying mechanisms of intergranular decohesion. The effect of a mono-vacancy on GBS is studied for copper. The multiscale approach enables improved decoupling of the mono-vacancy. It is found that the monovacancy enhances GBS by 22%. / Engineering and Applied Sciences

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O método cerâmico é a rota de síntese mais utilizada na produção de materiais luminescentes no estado sólido dopados com íons terras raras. Porém, as altas temperaturas necessárias para a formação dos compostos somada ao longo tempo de síntese levantam questões sobre a viabilidade energética desse método. Nos dias atuais, há grande interesse em buscar alternativas mais sustentáveis que gastem menos energia, e produtos com performances cada vez melhores. Nesse cenário, foi proposta a síntese dos materiais com luminescência persistente em forno de micro-ondas doméstico, por se tratar de um equipamento relativamente barato, que gasta muito menos energia que um forno tubular convencional, e tem um tempo de síntese muito menor. Os materiais SrS:Eu2+,TR3+ (TR = Ce, Nd, Sm, Dy, Er e Yb) foram produzidos pelo método de síntese no estado sólido assistida por micro-ondas, e para validação e comparação do método, os materiais SrS:TR (TR = Eu2+, Ce3+, Sm3+ e Yb2+/3+) foram preparados por ambos os métodos cerâmico e assistido por micro-ondas. Estudos de estrutura e morfologia dos materiais preparados foram realizados com medidas de DRX em pó e XANES na borda-LIII dos íons terras raras e na borda-K do enxofre. As propriedades luminescentes dos materiais foram investigadas com medidas de termoluminescência, luminância, espectroscopia UVVisível, espectroscopia UV-Vácuo e XEOL. Todos os materiais dopados com Eu2+ têm uma banda larga de emissão centrada em 620 nm atribuída à transição 4f65d1&#8594;4f7 com forte efeito nefelauxético. Além do Eu2+, foram observadas transições 5d&#8594;4f para o Ce3+ e o Yb2+. Estudos de luminescência persistente mostraram que a co-dopagem do SrS:Eu2+ com íons TR3+ aumentaram a duração do tempo de emissão de luz dos materiais após cessada a fonte de irradiação em mais de 400 %. Além disso, não se observou diferença na duração do fenômeno para os diferentes íons co-dopantes, mostrando que o mecanismo de luminescência persistes nesse material é governado pelo armadilhamento de elétrons em defeitos pontuais na matriz. Um novo fenômeno foi observado com a intensa luminescência persistente gerada após irradiação com raios X. Por fim, foram realizados testes de aplicação dos materiais com luminescência persistente em iluminação no estado sólido para geração de luz branca, mostrando que eles podem ser utilizados em LEDs persistentes. / Hitherto, the ceramic method is the most employed synthesis route on the production of solid-state luminescent materials doped with rare-earth ions. However, the high temperatures required for the compounds formation added up to the long synthesis time give rise to questions about the energetic viability of this method. Nowadays there is a great interest in finding more sustainable alternatives which demands less energy and provides products with better performances. Is this scenario, the synthesis of the persistent luminescence materials in a domestic microwave oven was proposed, because it is a relatively cheap equipment that spends much less energy than a conventional tubular furnace and has a shorter synthesis time. Thus, the materials SrS:Eu2+,TR3+ (TR = Ce, Nd, Sm, Dy, Er e Yb) were prepared via the microwaveassisted solid-state synthesis, and, for validation and comparison between methods, the materials SrS:TR (TR = Eu2+, Ce3+, Sm3+ and Yb2+/3+) were prepared via both the ceramic and microwave-assisted methods. Studies of structure and morphology of the prepared materials were undertaken with XRD and XANES at LIII-edge of rare-earth ions and K-edge of sulfur measurements. The luminescent properties of the materials were explored with thermoluminescence, luminance, UV-Vis spectroscopy, VUV spectroscopy and XEOL measurements. All the Eu2+-doped materials have a large emission band centered at 620 nm assigned to the 4f65d1&#8594;4f7 transition with strong nephelauxetic effect. Besides Eu2+, 5d&#8594;4f transitions were observed for Ce3+ and Yb2+ as well. Persistent luminescence studies showed that co-doping SrS:Eu2+ with TR3+ have improved the light emission timespan in over 400 % after removing the irradiation source. Moreover, no difference was detected on the emission timespan for the different co-dopant ions, showing that the persistent luminescence mechanism for this material is governed by electron trapping on the matrix point defects. A new phenomenon with high-intensity persistent luminescence was observed in these materials after irradiation with X-ray. At last, tests of application of the persistent luminescent materials with solid-state white-lighting were made, showing that they can be used in persistent LEDs.

This thesis is concerned with the growth, electronic properties and modification of hydrogenated amorphous carbon films of a thickess range of 50-300 nm, which have been deposited using rf plasma-enhanced chemical vapour deposition. These films may be subdivided into two types according to the electrode on which they are grown and the resulting film properties. These are polymer-like amorphous carbon or PAC, and diamond-like amorphous carbon or DAC. PAC possesses a wide optical band gap (2.7 eV), high resistivity (1014 - 10 15 Ocm) and low density of paramagnetic defects (~ 10 17 spins cm-3). The dominant current transport mechanism at room temperature has been observed to be hopping conduction at low electric fields and space-charge-limited current at high electric fields. The addition of nitrogen gas to the plasma to incorporate nitrogen within the film has been shown to move the Fermi level by 1 eV, towards midgap. A mechanism of doping due to the introduction of aromatic nitrogen-containing sites has been postulated. The boron, carbon and nitrogen ion implantation of PAC has resulted in the controllable increase in conductivity from 1015 to 106 O cm as a function of ion dose, from 2 x 1012 to 2 X 1016 ions cm-2. At low ion doses (up to 6 x 1014 ions cm-2) this occurs without any change in band gap; however, at higher doses the band gap collapses as a result of graphitisation. The dependence on the implant ion shows that it is possible to move the Fermi level towards the valence band with the implantation of boron, and towards midgap with the implantation of nitrogen. A hysteresis effect is observed at intermediate ion doses, which is attributed to the trapping of holes resulting in an increase in electron current. Implanting part of the thickness of the film at this ion dose has resulted in rectification, which has not previously been reported for this type of structure in amorphous carbon. DAC has been shown to possess a smaller band gap (0.7 eV), higher density of defects (~ 1020 spins cm-3) and lower resistivity (~ 1013 O cm) than PAC. The room-temperature current transport is governed by band-tail conduction at fields below 105 V cm-1, and the Poole-Frenkel effect at higher fields. The addition of nitrogen of up to 8 at. % has been observed to increase the band gap from 0.7 to 1.0 eV and therefore decrease the magnitude of the Poole-Frenkel conductivity. The Fermi level remains pinned at midgap, however. Therefore, it appears that PAC shows advantages over DAC in terms of future device applications.

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