CoordenaÃÃo de AperfeÃoamento de Pessoal de NÃvel Superior / Nas Ãltimas dÃcadas, a dinÃmica de pacotes de ondas tem sido objeto de vÃrios estudos teÃricos e experimentais em diversos tipos de sistemas, tais como semicondutores, supercondutores, sÃlidos cristalinos e Ãtomos frios. Com a descoberta do grafeno, surge agora um novo sistema para a comunidade cientÃfica investigar a evoluÃÃo temporal de pacotes de onda e a possibilidade de observar-se o fenÃmeno zitterbewegung (ZBW), um movimento trÃmulo previsto teoricamente por SchrÃdinger para pacotes de onda descrevendo partÃculas que obedecem à equaÃÃo de Dirac, como à o caso de elÃtrons de baixa energia neste material. Neste trabalho, apresentamos uma descriÃÃo detalhada da dinÃmica de partÃculas carregadas descritas por um pacote de onda Gaussiano em monocamada e bicamada de grafeno de forma analitica. Primeiramente, obtivemos analiticamente um Hamiltoniano aproximado 2x2 para uma monocamada de grafeno, generalizando-o, em seguida, para o caso de n-camadas com empilhamento ABC. A partir deste Hamiltoniano, encontramos as funÃÃes de onda para as sub-redes A e B. Uma vez conhecidas as funÃÃes de onda, determinamos a densidade de probabilidade eletrÃnica e o valor mÃdio das coordenadas do centro de massa com o objetivo de verificar o comportamento da propagaÃÃo do pacote de onda, bem como as oscilaÃÃes devido ao fenÃmeno ZBW. Foram analisados diferentes casos de polarizaÃÃo inicial de pseudo-spin, relacionados a diferentes amplitudes de probabilidade das funÃÃes de onda das sub-redes A e B que compÃem as camadas do grafeno. Por fim, comparamos os resultados obtidos analiticamente com um mÃtodo computacional tight-binding, encontrando um casamento perfeito entre os resultados para o caso da monocamada.

There are many semiconductors with nominally superior electronic properties compared to silicon. However, silicon became the material of choice for MOSFETs due to its robust native oxide. With Moore's observation as a guiding principle, the semiconductor industry has come a long way in scaling the silicon MOSFETs to smaller dimensions every generation with engineering ingenuity and technological innovation. As per the 2012 International Technology Roadmap for Semiconductors (ITRS), the MOSFET is expected to be scaled to near 6 nm gate length by 2025. However, materials, design and fabrication capabilities aside, basic physical considerations such as source to drain quantum mechanical tunneling, channel to gate tunneling, and thermionic emission over the channel barrier suggest an end to the roadmap for CMOS is on the horizon. The semiconductor industry is already aggressively looking for the next switch which can replace the silicon FET in the long term. My Ph.D. research is part of the quest for the next switch. The promises of process compatibility with existing CMOS technologies, fast carriers with high mobilities, and symmetric conduction and valence bands have led to graphene being considered as a possible alternative to silicon. This work looks at three devices based on graphene using first principles atomistic transport simulations and compact models capturing essential physics: the large-area graphene RF FET, the Bilayer pseudoSpin FET, and the double electron layer resonant tunneling transistor. The characteristics and performance of each device is explored with a combination of SPICE simulations and atomistic quasi static transport simulations. The BiSFET device was found to be a promising alternative to CMOS due to extremely low power dissipation. Finally, I have presented formalism for efficient simulation of time dependent transport in graphene for beyond quasi static performance analysis of the graphene based devices explored in this work. / text

The pseudospin symmetry concept is investigated by solving the Dirac equation for the exactly solvable potentials such as pseudoharmonic potential, Mie-type potential, Woods-Saxon potential and Hulth&eacute / n plus ring-shaped potential with any spin-orbit coupling term $kappa$. Nikiforov-Uvarov Method, Asymptotic Iteration Method and functional analysis method are used in the calculations. The energy eigenvalue equations of the Dirac particles are found and the corresponding radial wave functions are presented in terms of special functions. We look for the contribution of the ring-shaped potential to the energy spectra of the Dirac particles. Particular cases of the potentials are also discussed. By considering some particular cases, our results are reduced to the well-known ones presented in the literature. In addition, by taking equal mixture of scalar and vector potentials together with tensor potential, solutions of the Dirac equation are found and then the energy splitting between the two states in the pseudospin doublets is investigated. We indicate that degeneracy between members of pseudospin doublet is removed by tensor interactions. Effects of the potential parameters on the pseudospin doublet splitting are also studied. Radial nodes structure of the Dirac spinor are presented.

Spin-torque transfer (STT) effects have brought spintronics ever closer to practical electronic applications, such as MRAM and active broadband microwave spin-torque oscillator (STO), and have emerged as an increasingly attractive field of research in spin dynamics. Utilizing materials with perpendicular magnetic anisotropy (PMA) in such applications offers several great advantages such as low-current, low-field operation combined with high thermal stability. The exchange coupling that a PMA thin film exerts on an adjacent in-plane magnetic anisotropy (IMA) layer can tilt the IMA magnetization direction out of plane, thus creating a stack with an effective tilted magnetic anisotropy. The tilt angle can be engineered via both intrinsic material parameters, such as the PMA and the saturation magnetization, and extrinsic parameters, such as the layer thicknesses.       STOs can be fabricated in one of a number of forms—as a nanocontact opening on a mesa from a deposited pseudospin-valve (PSV) structure, or as a nanopillar etching from magnetic tunneling junction (MTJ)—composed of highly reproducible PMA or predetermined tilted magnetic anisotropy layers.       All-perpendicular CoFeB MTJ STOs showed high-frequency microwave generation with extremely high current tunability, all achieved at low applied biases. Spin-torque ferromagnetic resonance (ST-FMR) measurements and analysis revealed the bias dependence of spin-torque components, thus promise great potential for direct gate-voltage controlled STOs.       In all-perpendicular PSV STOs, magnetic droplets were observed underneath the nanocontact area at a low drive current and low applied field. Furthermore, preliminary results for microwave auto-oscillation and droplet solitons were obtained from tilted-polarizer PSV STOs. These are promising and would be worth investigating in further studies of STT driven spin dynamics. / Effekter av spinnvridmoment (STT) har fört spinntroniken allt närmare praktiska elektroniska tillämpningar, såsom MRAM och den spinntroniska mikrovågsoscillatorn (STO), och har blivit ett allt mer attraktivt forskningsområde inom spinndynamik. Användning av material med vinkelrät magnetisk anisotropi (PMA) i sådana tillämpningar erbjuder flera stora fördelar, såsom låg strömförbrukning och funktion vid låga fält i kombination med hög termisk stabilitet. Den utbyteskoppling (”exchange bias”) en PMA-tunnfilm utövar på ett intilliggande skikt med magnetisk anisotropi i planet (IMA) kan få IMA-magnetiseringsriktningen att vridas ut ur planet, vilket ger en materialstack med en effektivt sett lutande magnetisk anisotropi. Lutningsvinkeln kan manipuleras med både inre materialparametrar, såsom PMA och mättningsmagnetisering, och yttre parametrar, såsom skikttjocklekarna. STO:er kan tillverkas som flera olika typer - som en nanokontaktsöppning på en s.k. mesa av en deponerad pseudospinnventilstruktur (PSV) eller som en nanotråd etsad ur en magnetisk tunnlingsövergång (MTJ) –och bestå av mycket reproducerbar PMA eller av skikt med på förhand bestämt lutning av dess magnetiska anisotropi. MTJ-STO:er av CoFeB med helt vinkelrät anisotropi visar högfrekvent mikrovågsgenerering med extremt stort frekvensomfång hos strömstyrningen, detta vid låg biasering. Mätning och analys av spinnvridmoments-ferromagnetisk resonans (ST-FMR) avslöjade ett biasberoende hos spinnvridmomentskomponenter, vilket indikerar en stor potential för direkt gate-spänningsstyrda STO:er. I helt vinkelräta PSV-STO:er observerades magnetiska droppar under nanokontaktområdet vid låg drivström och lågt pålagt fält. Dessutom erhölls preliminära resultat av mikrovågssjälvsvängning och av s.k. ”droplet solitons” hos PSV-STO:er med lutande polarisator. Dessa är lovande och skulle vara värda att undersökas i ytterligare studier av STT-driven spinndynamik. / <p>QC 20160829</p>