Disertacijos darbo tikslas buvo, modeliuojant bei vykdant eksperimentus, suprasti plonų sluoksnių, naudojamų Saulės elementuose, abliacijos procesus ultratrumpais impulsais, siekiant juos pritaikyti integruotų jungčių fotovoltiniuose moduliuose formavimui. Eksperimento rezultatams pagrysti buvo vykdomas lazerio spinduliuotės sklidimo bei pasiskirstymo plonasluoksnėje Saulės elemento struktūroje modeliavimas. Sugerta lazerio energija lokaliai užkaitiną medžiagą. Kadangi lazerinio proceso selektyvumas priklauso nuo medžiagos optinių savybių, todėl yra itin svarbu parinkti tinkamą lazerio spinduliuotės bangos ilgį, norint sukaupti spinduliuotę reikiamame plonasluoksnės struktūros sluoksnyje. Nustatyta, kad fundamentinė pikosekundinio lazerio spinduliuotė (1064 nm) yra optimaliausia P3 tipo rėžio formavimui CIGS Saulės elemente. Pramonės taikymams tai yra itin svarbu, nes tokiu atveju mažėja industrinės lazerinės sistemos sudėtingumas bei kaina. Saulės elementų efektyvumo tyrimai parodė nežymų fotoelektrinio efektyvumo sumažėjimą po lazerinio apdirbimo ultra trumpais impulsais, tačiau nebuvo užfiksuota defektų generacijos lazeriais paveiktose kanalo kraštų zonose. Disertacijoje pasiūlyti ir išbandyti pluošto formavimo ir lygiagretaus sluoksnių raižymo metodai, didinantys proceso našumą ir raižymo kokybę. Pikosekundiniai, didelio impulsų pasikartojimo dažnio lazeriai gali būti panaudoti didelės spartos bei aukštos kokybės Saulės elementų raižymo procesuose. / Present PhD thesis is the experimental and theoretical analysis of thin layer ultrashort pulsed laser ablation processes for photovoltaic devices. Experimental work was supported by modeling and simulation of energy coupling and dissipation inside the layers. The absorbed laser energy was transformed to localized transient heating inside the structure. Selectiveness of the ablation process was defined by optical and mechanical properties of the materials, and selection of the laser wavelength facilitated control of the structuring process. The 1064 nm wavelength was found optimal for the CIGS solar cell scribing in terms of quality and process speed. It is very positive result for industrial applications as the cost and the system complexity are decreased. The solar cell efficiency test revealed minor degradation in photo-electrical efficiency after the laser scribing was applied to the solar cell samples. Lock-in thermography measurements did not revealed any internal shunt formation during laser scribing with picosecond pulse duration. Picosecond lasers with fundamental harmonics and high repetition rates can be used to accomplish efficient and fast scribing process which is able to fit the demands for industrial solar cell scribing applications.

Present PhD thesis is the experimental and theoretical analysis of thin layer ultrashort pulsed laser ablation processes for photovoltaic devices. Experimental work was supported by modeling and simulation of energy coupling and dissipation inside the layers. The absorbed laser energy was transformed to localized transient heating inside the structure. Selectiveness of the ablation process was defined by optical and mechanical properties of the materials, and selection of the laser wavelength facilitated control of the structuring process. The 1064 nm wavelength was found optimal for the CIGS solar cell scribing in terms of quality and process speed. It is very positive result for industrial applications as the cost and the system complexity are decreased. The solar cell efficiency test revealed minor degradation in photo-electrical efficiency after the laser scribing was applied to the solar cell samples. Lock-in thermography measurements did not revealed any internal shunt formation during laser scribing with picosecond pulse duration. Picosecond lasers with fundamental harmonics and high repetition rates can be used to accomplish efficient and fast scribing process which is able to fit the demands for industrial solar cell scribing applications. / Disertacijos darbo tikslas buvo, modeliuojant bei vykdant eksperimentus, suprasti plonų sluoksnių, naudojamų Saulės elementuose, abliacijos procesus ultratrumpais impulsais, siekiant juos pritaikyti integruotų jungčių fotovoltiniuose moduliuose formavimui. Eksperimento rezultatams pagrysti buvo vykdomas lazerio spinduliuotės sklidimo bei pasiskirstymo plonasluoksnėje Saulės elemento struktūroje modeliavimas. Sugerta lazerio energija lokaliai užkaitiną medžiagą. Kadangi lazerinio proceso selektyvumas priklauso nuo medžiagos optinių savybių, todėl yra itin svarbu parinkti tinkamą lazerio spinduliuotės bangos ilgį, norint sukaupti spinduliuotę reikiamame plonasluoksnės struktūros sluoksnyje. Nustatyta, kad fundamentinė pikosekundinio lazerio spinduliuotė (1064 nm) yra optimaliausia P3 tipo rėžio formavimui CIGS Saulės elemente. Pramonės taikymams tai yra itin svarbu, nes tokiu atveju mažėja industrinės lazerinės sistemos sudėtingumas bei kaina. Saulės elementų efektyvumo tyrimai parodė nežymų fotoelektrinio efektyvumo sumažėjimą po lazerinio apdirbimo ultra trumpais impulsais, tačiau nebuvo užfiksuota defektų generacijos lazeriais paveiktose kanalo kraštų zonose. Disertacijoje pasiūlyti ir išbandyti pluošto formavimo ir lygiagretaus sluoksnių raižymo metodai, didinantys proceso našumą ir raižymo kokybę. Pikosekundiniai, didelio impulsų pasikartojimo dažnio lazeriai gali būti panaudoti didelės spartos bei aukštos kokybės Saulės elementų raižymo procesuose.

Polymer/Metall-Schichtsysteme mit Ausmaßen auf der Nanometer-Skala repräsentieren eine wichtige Materialklasse, welche für Untersuchungen von Grenzflächen- und Größeneffekten eine besondere Rolle spielen. Interessanterweise beobachtet man bei der Herstellung von Polymer/Metall-Systemen mit der gepulsten Laserdeposition spannungsinduzierte Wellenbildung in den Metallschichten, wenn diese auf einem Polymer mit einem niedrigen Elastizitätsmodul deponiert werden. Die Druckspannungen in den Metallschichten lassen sich aufgrund der hohen kinetischen Energien der deponierten Teilchen (100 eV) erklären. Die Biegebalkentheorie beschreibt dabei den Zusammenhang zwischen der ausgebildeten Wellenlänge und den Eigenschaften der beiden Komponenten. Aufgrund dieses Verständnisses ist es möglich, die gemessene Wellenlänge als Messmethode zur Bestimmung der mechanischen Eigenschaften der beiden Komponenten zu verwenden. Des Weiteren kann die Wellenlänge ganz gezielt durch Variation der Schichtdicke beider Komponenten eingestellt werden. Durch eine Steigerung des Elastizitätsmoduls der Polymerschicht ist es möglich, glatte Metallschichten ohne Wellenbildung herzustellen. Auf diese Weise lassen sich auch glatte, periodische Polymer/Metall-Schichtsysteme mit der gepulsten Laserdeposition herstellen, welche viele Möglichkeiten bieten sowohl für wissenschaftliche Fragestellungen als auch für Anwendungen.

Im Rahmen dieser Arbeit wurde der Einfluss von Defekten auf die Eigenschaften von Ferrit-Dünnfilmen untersucht. Die Dünnfilme wurden mit Hilfe von gepulster Laserabscheidung bei verschiedenen Züchtungsparametern hergestellt. Durch Variation der Substrattemperatur und des Sauerstoffpartialdrucks wurden Dünnfilme verschiedener kristalliner Qualität gezüchtet. Diese wurden hinsichtlich ihrer chemischen Komposition mit Hilfe von energie-dispersiver Röntgenspektroskopie und Röntgenphotoelektronenspektroskopie untersucht. Durch Korrelation der Ergebnisse mit Messungen zum zirkularen magnetischen Röntgendichroismus, konnte eine partielle Inversion der Spinellstruktur nachgewiesen werden. Der Grad der Inversion ist höher für geringe Abscheidetemperaturen. Für diese defektreichen Dünnfilme zeigen Röntgenbeugungsuntersuchungen eine geringere kristalline Ordnung der Dünnfilme. Die strukturellen Defekte haben einen maßgeblichen Einfluss auf die elektrischen und magnetischen Eigenschaften der Ferrit-Dünnfilme. So zeigen die Ferrit-Dünnfilme für geringe Züchtungstemperaturen eine erhöhte elektrische Leitfähigkeit, während Dünnfilme, die bei hohen Substrattemperaturen gezüchtet wurden, isolierend sind. Die Temperaturabhängigkeit der elektrischen Leitfähigkeit kann auf thermisch aktivierte Hopping-Leitung oder die Leitung zwischen Clustern, die in einer Matrix eingebettet sind, zurückgeführt werden. Die magnetischen Eigenschaften von Zinkferrit-Dünnfilmen werden maßgeblich durch Defekte in der Spinellstruktur bestimmt, da es nominell in der normalen Spinellstruktur kristallisiert und daher antiferromagnetisch ist. Die partielle Inversion der Eisen- und Zinkionen führt zu Ferrimagnetismus in den Zinkferrit-Dünnfilmen, der mit Hilfe von SQUID-Messungen in dieser Arbeit eingehend untersucht wurde. Durch Korrelation der Ergebnisse der verschiedenen Untersuchungsmethoden konnten Rückschlüsse auf die dominierenden Defekte in den Ferrit-Dünnfilmen geschlossen werden. So sind zum einen Defekte auf atomarer Skala, wie Antisite-Defekte und divalenten Fe-Ionen für die erhöhte elektrische Leitfähigkeit und die größere Magnetisierung der defektreichen Dünnfilme verantwortlich. Zum anderen können ausgedehnte Defekte, im Speziellen Cluster, die in einer amorphen Matrix eingebettet sind, nicht ausgeschlossen werden.

This thesis discusses two different magnetic materials: epitaxial yttrium iron garnet (YIG) and heteromorphous CoFeB-SiO2 films. YIG films were grown by pulse laser deposition (PLD) techniques onto gadolinium gallium garnet (GGG) substrates of (111) and (001) crystal orientations. Using stoichiometric and overstoichiometric ablative targets, we developed two types of YIG submicron films. The films grown from overstoichiometric targets have magnetic properties slightly different from standard liquid phase epitaxy (LPE) YIGs. They also demonstrate good substrate matching and approximately 6% nonstoichiometry. In contrary, films grown from stoichiometric targets posses surprisingly high values of uniaxial anisotropy, meanwhile cubic anisotropy is reduced several times. These films also reveal strong lattice distortions and nonstoichiometry around 17%. Employing Weiss molecular field theory and single-ion anisotropy model we determined the preferential occupancy of the octahedral [a] positions in the YIG cubic lattices by Fe3+ vacancies. The vacancies were found to be preferentially oriented along the growth direction perpendicular to the film surface. We called this effect “deformation blockade”. Different magnetostatic surface wave (MSSW) filters were also demonstrated. The filters employ high uniaxial anisotropy in YIG submicron films with magnetic losses ΔH ~ 1 Oe.  Heteromorphous CoFeB-SiO2 films were deposited onto glass substrates employing carrousel magnetron sputtering. This novel technique allows amorphous films fabrication with record high in-plane anisotropy. The induced anisotropy fields here are approximately dozen times greater the values achieved using conventional growth technique when external bias field is applied during deposition process. Interesting observations were made studying CoFeB-SiO2 magnetization dynamics in the wide frequency range from 500 kHz up to 15 GHz.  Two different anomalies of the magnetic susceptibility were found at the field of in-plane anisotropy Hp and critical field Hcr (0 < Hcr < Hp). We explained the anomalies appearance by sequence of the domain walls transformations so that Néel-Bloch-Néel domain wall transition stands for the instability at H = ±Hcr and transition from the uniformly magnetized state to the domain state with Néel domain wall and vice versa is responsible for the instability at H = ±Hp. / QC 20111122

Le développement des sources supercontinuum a engendré des avancées majeures dans de nombreux domaines tels que la spectroscopie, la métrologie ou encore la biologie avec la tomographie optique cohérente. Récemment, l'arrivée des fibres à cristaux photoniques (FCPs) a permis la fabrication de telles sources avec des lasers impulsionnels de pompe moins puissants. Ainsi, de par leur compatibilité avec les fibres optiques, les lasers impulsionnels réalisés en optique intégrée sur verre semblent une alternative intéressante pour la réalisation d'une source supercontinuum intégrée. Notre travail a donc eu pour objectif l'étude et la réalisation d'un laser impulsionnel déclenché par modulation passive des pertes assez puissant et compatible avec les fibres à cristaux photoniques dans le but de générer un supercontinuum. Nous avons alors conçu et fabriqué ce laser constitué d'un guide d'onde amplificateur réalisé par échange d'ions dans un verre dopé au néodyme et d'une cavité Fabry-Perot fermée par un miroir diélectrique en entrée et sans miroir de sortie ce qui permet un couplage direct avec une fibre optique. L'hybridation de l'absorbant saturable sous la forme d'une couche mince d'acétate de cellulose dopée au BDN sur le guide d'onde a permis la génération d'impulsions ayant une puissance crête de (2,8 ± 0,6) kW. La source supercontinuum réalisé avec une FCP pompée par le laser préalablement étudié présente un spectre allant de 440 nm à 1600 nm. Les perspectives de cette étude portent sur le changement de matériau absorbant saturable pour permettre l'émission d'impulsions plus puissantes, ainsi que sur l'intégration monolithique de la FCP pour réaliser un dispositif encore plus compact. Elles portent aussi sur la réalisation de lasers intégrés à modes bloqués utilisant cette technologie. Nous avons démontré sa faisabilité ainsi que son régime de fonctionnement en soliton dissipatif. Des caractérisations préliminaires ont également été effectuées. / Supercontinuum sources made possible major break through in spectroscopy metrology and biology like the development of optical coherent tomography. Photonics crystal fiber have been useful for supercontinuum generation allowing the use of relatively low peak power pulsed laser sources. Regarding this kind of devices, pulsed lasers made by integrated optics on glass seemed to be a good candidate. The aims of this work were hence to develop and realize Q-switched lasers for photonic crystal fiber pumping. We demonstrated the possibility to realize a supercontinuum source pumped by an integrated Q-switched laser made by ion exchange on Neodymium doped glass. The Fabry-Perot cavity used is closed by a dielectric mirror on one hand and by the waveguide facet on the other side allowing direct coupling with optical fiber. The saturable absorber has been hybridized on the amplifying waveguide to interact with the evanescent wave. (2.8 ± 0.6) kW peak-power pulses have been generated, which coupled in a photonic crystal fiber, generated a 440 nm to 1600 nm large supercontinuum. As a perspective, a mode-locked laser realized with the same technology has been demonstrated. We show that this laser operates in dissipative soliton regime. This laser is then preliminary characterized.

Les concepts de matériaux multiferroïques et/ou magnétoélectriques permettent d’envisager de nouveaux dispositifs de mémoires plus performants et moins consommateurs d’énergie. Malheureusement de tels matériaux présentant ces propriétés à température ambiante ne sont pour l’instant pas disponibles. Les matériaux qui font l’objet des études présentées dans ce manuscrit, les ferrites de gallium Ga2-xFexO3, 0,7 ≤ x ≤ 1,4, sont d’excellents candidats. Le présent travail de thèse en a étudié les propriétés électriques, tant sur matériaux massifs que couches minces. Nous avons mesuré une polarisation sur composés massifs du même ordre de grandeur que celle précédemment déterminée par calculs ab initio. Une considérable réduction des courants de fuite habituellement observés en couches minces a été possible grâce à la substitution de Fe2+ par Mg2+. Une polarisation réversible et un effet magnétoélectrique ont alors pu être mis en évidence. Compte tenu du caractère ferrimagnétique à température ambiante des couches minces considérées, ceci constitue la première manifestation d’un matériau multiferroïque et magnétoélectrique à réel intérêt applicatif. / Concepts of multiferroic and magnetoelectric materials allow designing new memory devices with better performances and less energy consumption. Unfortunately, such materials with room temperature applicability are not yet available.The material concerned by this study, gallium ferrites Ga2-xFexO3, 0.7 ≤ x ≤ 1.4, are excellent candidates for such applications. This work aimed at studying the electrical properties of the bulk material, as well as in thin films. We have measured a polarization on the bulk samples comparable to the value estimated by first principle calculations. A considerable reduction of the leakage currents usually observed in oxide thin films has been achieved by the doping by substitution of Fe2+ in the structure, using Mg2+. A switchable polarization and a magnetoelectric effect at room temperature in thin films have been observed. Considering the room temperature ferrimagnetic behavior of this compound, this is the first manifestation of a multiferroic and magnetoelectric with real potential and technological applications.

Neste trabalho, foi desenvolvido um laser pulsado utilizando um chaveador-Q passivo em uma cavidade com a tecnologia de controle de modo por duplo-passo. Utilizando um cristal de Nd:LiYF4 com 0,8 mol% de dopagem, foi possível gerar um pulso com duração de 5,5 ns (FWHM), com 1,2 mJ de energia e potência pico de 220 kW para utilização na técnica Cavity Ring-Down Spectroscopy (CRDS). A técnica (CRDS), que pode ser traduzida por espectroscopia de cavidade ressonante, é utilizada para medida de espectros de absorção de gases, líquidos e sólidos. Com a técnica CRDS é possível medir perdas com altíssimo grau de precisão, ressaltando sua sensibilidade que é confirmada pela utilização de espelhos com alta refletividade. Foram avaliadas, com essa técnica, as perdas por reflexão e espalhamento de materiais transparentes. Após a calibração da cavidade ressonante, foi possível medir as perdas nas amostras com resolução de até 0,045%, sendo o valor máximo alcançado de 1,73%. Essa calibração foi possível, pois obteve se um tempo de decaimento de aproximadamente 20 μs com a cavidade desobstruída. Também foi conseguido um método de determinação do índice de refração dos materiais transparentes com precisão de cinco casas decimais. / In this work, a pulsed and Q-switched laser resonator was developed using the double-beam mode-controlling technique. A Nd:LiYF4 crystal with 0,8mol% of doping concentration was used to generate a giant pulse with duration of 5,5 ns (FWHM), 1,2 mJ of energy and 220 kW peak power for the Cavity Ring-Down Spectroscopy (CRDS) technique. The CRDS technique is used to measure absorption spectra for gases, liquids and solids. With the CRDS technique it is possible to measure losses with high degree of accuracy, underscoring the sensitivity that is confirmed by the use of mirrors with high reflectivity. With this technique, the losses by reflection and scattering of transparent materials were evaluated. By calibrating the resonant cavity, it was possible to measure the losses in the samples with resolution of 0,045%, the maximum being reached by 1,73%. The calibration was possible because there was obtained to measure a decay time of approximately 20 μs with the empty cavity. Besides was obtained a method for determining the refractive index of transparent materials with accuracy of five decimals.

Submitted by Irene Nascimento (irene.kessia@ufpe.br) on 2017-04-25T19:25:57Z No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) ACGW_Dissertação.pdf: 2393143 bytes, checksum: 1dc4bede5ad081bffd11e546c86a753a (MD5) / Made available in DSpace on 2017-04-25T19:25:58Z (GMT). No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) ACGW_Dissertação.pdf: 2393143 bytes, checksum: 1dc4bede5ad081bffd11e546c86a753a (MD5) Previous issue date: 2016-07-26 / CNPQ / Apresentamos um estudo da interação de um laser de femtosegundos de Ti:safira, com alta taxa de repetição, com vapor atômico de Rubídio. Trabalhamos no regime de acumulação coerente, em que o tempo de relaxação dos átomos do meio é maior que o tempo entre os pulsos. Para sondar a excitação produzida pelo laser pulsado sobre os vários grupos de velocidades atômicos usamos um laser contínuo de diodo. Estudamos a transmissão do laser de diodo em função de sua frequência, na presença e na ausência do laser pulsado, quando ambos os lasers estão sintonizados na transição 5S1=2 !5P3=2. Os resultados experimentais mostram que a transmissão do laser de diodo aumenta ou diminui dependendo do modo do pente de frequências que está interagindo com o grupo de átomos. Descrevemos os resultados experimentais trabalhando no domínio da frequência e modelando o meio atômico por um conjunto de dois sistemas de três níveis tipo L e um sistema de dois níveis, todos independentes entre si, interagindo com os modos do pente de frequência. Assim, a modelagem teórica considera os vários níveis hiperfinos e discrimina a interação com a transição cíclica do efeito de bombeio ótico, apresentado um resultado em concordância com os dados experimentais obtidos. O experimento foi realizado sem travar a taxa de repetição nem a frequência de off-set do laser de femtosegundos. / We present a study of the interaction of a high repetition rate femtosecond Ti:sapphire laser with a vapor atomic rubidium. We work on coherent accumulation regime, in which the atomic relaxation time is greater than the time interval between pulses. The action of the ultrashortpulsed laser over different atomic velocity groups is probed by a diode laser. We studied the transmission of the diode laser as a function of frequency, with and without the presence of the ultrashort-pulsed laser, when both lasers are tuned to 5S1=2!5P3=2 transition. The experimental results show that the diode laser transmission increases or decreases depending on the mode of the frequency comb that interacts with different velocity groups. The experimental results are described in the frequency domain and the atomic system is modeled by a set of two threelevel L systems and a system of two-level all independent and interacting with the frequency comb modes. The theoretical treatment considers the hyperfine transitions and distinguishes the interaction between the cyclic transitions from optical pumping effect, showing results in good agreement with the experimental data. The experiment is performed without lock repetition rate or the off-set frequency of the femtosecond Ti:sapphire laser.

Cette thèse concerne l’étude de l’effet du dopage au chrome sur les propriétés structurales, électriques et optiques des films de dioxyde de vanadium. Ces films V(1-x)CrxO2 (x allant de 0 à 25%) de 110 nm d’épaisseur ont été déposés par dépôt par ablation laser (PLD) multicibles sur substrat saphir c. Ils ont été caractérisés grâce à des techniques d’analyse morphologique, structurale, électrique et optique. Les différentes phases présentes dans les films V(1-x)CrxO2 ont été identifiées par DRX, spectroscopie Raman et comparées au diagramme de phase du matériau massif. Les phases M1, M2 et M3, un mélange M2 + M3 et la phase R ont été identifiées. En revanche la phase M4 n’a pas été détectée pour des dopages supérieurs à 8%, montrant une réelle différence entre diagrammes de phase du matériau massif et des films. Le dopage au chrome a permis d’augmenter la température de transition isolant-métal de 68 à 102°C. En revanche, la dynamique de cette transition, déterminée par mesure de transmission optique ou par mesure de résistivité électrique, est souvent diminuée. Enfin, des dispositifs à deux terminaux à base de films V(1-x)CrxO2 ont été réalisés. Leurs caractérisations courant-tension montrent que le dopage au chrome influence fortement le seuil d’activation de la transition entre les états isolant et métallique. / This thesis presents a study of the effect of chromium doping on structural, electrical and optical properties of thin films of vanadium dioxide. These V(1-x)CrxO2 thin films (x from 0 to 25%) of 110 nm thick have been deposited on c sapphire substrate by multi target Pulsed Laser Deposition method. Their morphological, structural, electrical and optical properties have been studied. Different phases for V(1-x)CrxO2 have been identified by XRD and Raman analysis and compared to those of bulk material. M1, M2, M3, a mixture M2 + M3 and R phases are present. The M4 phase has not been detected for doping above 8%, showing a real difference between phase diagram of bulk and thin films. Chromium doping also increases the metal-insulator transition temperature from 68°C to 102°C. Moreover, the transition dynamics, determined using optical transmission and electrical resistivity measurements, decreases. Finally, two terminal switches based on V(1-x)CrxO2 thin films have been fabricated. Their current-voltage characterization showed that chromium doping affects the activation threshold voltage of the metal to insulator transition.