Down-conversion (DC) and down-shifting (DS) layers are optical layers mounted on the top surface of a solar cell that can potentially increase the solar cell efficiency. The effect of DC and DS layers to enhance the performance of single-junction solar cells has been studied by means of simulation and experimental work. In this thesis a model is developed to study the effects of DC and DS layers by modifying the incident spectrum. The effect of the layers on ideal cells as well as commercial grade silicon and CIGS solar cells that are modeled in a device simulator is examined. Silicon nanocrystals (Si-nC) embedded in a silicon dioxide matrix to act as a DS layer were fabricated and characterized at McMaster University as part of this project. The measured optical properties as well as the photoluminescence measurements are used as input parameters to the optical model. The enhancement due to the Si-nC when coupled to silicon and CIGS solar cells is explored. Beside the DC and DS effects, there is also disturbance to the surface reflections due to the addition of a new layer to the top surface and is referred to as antireflection coating (ARC) effect. For the simulated silicon solar cell under the standard AM1.5G spectrum (1000W/m2), a maximum increase in Jsc of 8.4% is achieved for a perfect DS layer as compared to a reference cell, where 7.2% is due to ARC effect and only 1.2% is due to DS effect. On the other hand, there is an increase in Jsc of 19.5% for the CIGS solar cell when coupled to a perfect DS layer. The DS effect is dominant with 18%, while the ARC effect contributes only 1.5% to the total Jsc enhancement. Accurately characterizing DS layers coupled to solar cell requires knowledge of optical properties of the complete structure. Internal quantum efficiency is an important tool for characterizing DS systems, nevertheless, it is rarely reported. In addition, the ARC effect is not experimentally decoupled from the DS effect. In this work, a straightforward method for calculating the active layer contribution that minimizes error by subtracting optically-modeled electrode absorption from experimentally measured total absorption.

Perovskite solar cells are part of third generation of solar cells and thanks to their atractive properties they are potencional candidates for replacement of silicon solar cells. Inverted planar structure of perovskite solar cells is possible to prepare by low temperature methods and by solution processing techniques. Main aim of this thesis was to prepare and characterize inverted planar perovskite solr cells with a different modification of structure. Perovskite solar cells was prepared with following structures: reference perovskite solar cells, perovskite solar cells with only a perovskite layer, perovskite solar cell without electron transport and perovskite solar cell without hole transport layer. They were prepared simultaneously by spin coating. Methods used for a characterisation of a parameters of this cells were current-voltage characteristic, impedance spektroskopy, meassure of external quantum efficiency and electrolumiscence. Reference perovskite solar cell reached best results folowed by solar cell without hole transport layer. Lowest results were gained by perovskite solar cell without electron transport layer and perovskite solar cell with only perovskite layer, where increased recombination and acumulation of charge were observed,

This thesis deals with synthesis and characterization of newoligothiophenes and derivatives thereof, for use as organicsemiconductors in optical and electronic applications, such asfield-effect transistors and light-emitting diodes. Much workis devoted to the development of new synthetic strategies forinteresting building blocks, to beused for synthesizing suchmaterials. One series of regio-defined oligothiophenes, up tothe octamer, has been prepared and evaluated. Photoluminescencequantum efficiencies of these were 22-31 % in solution, butdropped to 2-5 % in the solid state. Another project deals withthe development of oligothiophenes with in-chain chirality.These may find use in polarized lightemitting diodes. Finally,two oligothienyl-substituted porphyrins have been synthesizedand are currently evaluated for use in light-emitting diodesand possibly in solar cells. / NR 20140805

京都大学 / 0048 / 新制・課程博士 / 博士(エネルギー科学) / 甲第21472号 / エネ博第377号 / 新制||エネ||74(附属図書館) / 京都大学大学院エネルギー科学研究科エネルギー変換科学専攻 / (主査)准教授 増田 開, 教授 長﨑 百伸, 教授 大垣 英明 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DFAM

Photolumineszenz-Techniken spielen eine wichtige Rolle bei der Charakterisierung verschiedener funktionaler Fluorophore in den Lebens- und Materialwissenschaften, in der Biologie und bis hin zu den Quantentechnologien. Ein entscheidender und wichtiger Parameter für den Vergleich von Fluorophoren ist die Quanteneffizienz, die ein direktes Maß für die Umwandlungseffizienz von absorbierten Photonen in emittierte Photonen darstellt. Diese Größe charakterisiert die Nutzbarkeit von Emittern für Anwendungen in optischen Geräten, Einzelphotonenquellen und im biomedizinischen Bereich. Mehrere Techniken wie optische und photothermische Methoden werden verwendet, um die photolumineszente Quanteneffizienz zu messen, und so die Eignung von Fluorophoren für verschiedene Anwendungen zu bewerten. Quanteneffizienz-Messungen können jedoch eine Herausforderung für hochverdünnte Fluorophore sein, die in dünne Schichten eingebettet sind. Die in dieser Arbeit beschriebene Forschung überwindet die Herausforderungen der Quanteneffizienzmessung durch eine Modifikation der Wechselwirkung zwischen Licht und Umgebung. / Photoluminescence techniques play an important role for characterization of various functional fluorophores in the life and material sciences from biology to quantum technologies. A crucial and key parameter for comparing the performance of fluorophores is the photoluminescence quantum efficiency or quantum yield, which presents a direct measure of conversion efficiency of absorbed photons into emitted photons. This quantity characterizes the performance of emitters for applications in optical devices as single photon sources and in the biomedical sector. Several techniques such as optical and photothermal methods are used to measure the photoluminescence quantum efficiency of emitters in various environments and aggregation states. Quantum efficiency measurements can be challenging for fluorophores in solid matrix, in scattering systems and for highly diluted fluorophores embedded to thin films. The research described in this thesis overcomes these challenges by performing quantum efficiency measurement via modifying the spontaneous emission as a fundamental process of light-matter interaction.

No description available.

<p>Single junction silicon photovoltaic cells (SJSPVCs) are unable to transform all the energy in the solar spectrum into electricity, due to the broad nature of the solar spectrum and the limits imposed by a single bandgap. Furthermore, high surface recombination velocity reduces the SJSPVC external quantum efficiency response, particularly to ultraviolet photons. It is the goal of spectral engineering to optimize the light that is incident on the cell, by down-shifting high energy photons to lower energies, for example, to improve the performance of photovoltaic cells.</p> <p>This thesis represents a study into the luminescence of ion implanted films, involving silicon nanocrystals (Si-NCs) and rare-earth ions in fused silica or silicon nitride. Quantum efficiency measurements taken with an integrating sphere were used to characterize some of the samples. Other photoluminescence (PL) characterization work was carried out with a single-wavelength laser and a collection lens normal to the sample. Variable angle spectroscopic ellipsometry (VASE) was used to estimate the optical constants of the implanted films. In secondary work, Rutherford backscattering spectrometry, time-dependent PL, infrared-PL measurements, and electrical conductivity measurements were used to characterize select samples.</p> <p>It was found that the conversion efficiency of Si-NCs in fused silica was about 1% – too low to be useful according to modeled results. However, considerable variation in the peak wavelength of the Si-NC PL was obtained, depending on the peak concentration of implanted silicon. Si-NC-type PL was also produced by low-energy implantation of oxygen into a Czochralski silicon wafer.</p> <p>Oxygen was also implanted into films of cerium-doped high-purity silicon nitride, and it was shown that the photoluminescence from these films is largely dependent on the level of oxygen doping. The internal conversion efficiency of a cerium-doped fused silica sample was found to approach 20%, which indicates that this is a promising avenue for future research.</p> <p>Finally, energy transfer was demonstrated between Si-NCs and erbium ions. The lifetime of the erbium PL appears to increase with increasing implanted silicon fluence.</p> / Master of Applied Science (MASc)

<p>The aim of third-generation photovoltaics (PV) is ultimately to achieve low-cost, high-efficiency devices. This work focused on a third-generation PV concept known as down-shifting, which is the conversion of high-energy photons into low-energy photons which are more useful for a typical solar cell. Silicon nanocrystals (Si-NCs) fabricated using electron-cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) were studied as a down-shifting material for single-junction silicon cells. A calibration was done to determine optimal deposition parameters for Si-NC formation. An experiment was then done to determine the effect of film thickness on emission, optical properties, and photoluminescence quantum efficiencies.</p> <p>Photoluminescence (PL) peaks varied depending on the stoichiometry of the films, ranging from approximately 790 nm to 850 nm. Variable-angle spectroscopic ellipsometry was used to determine the optical constants of the Si-NC films. The extinction coefficients indicated strong absorption below 500 nm, ideal for a down-shifting material. Transmission Electron Microscopy (TEM) was used to determine the size, density, and distribution of Si-NCs in two of the films. Si-NCs were seen to have an average diameter of approximately 4 nm, with larger nanocrystals more common near the surface of the film. A density of approximately 10⁵ nanocrystals per cubic micron was approximated from one of the TEM samples.</p> <p>The design and implementation of a PL quantum efficiency measurement system was achieved, using an integrating sphere to measure the absolute efficiency of Si-NC emission. Internal quantum efficiencies (IQE) as high as 1.84% and external quantum efficiencies (EQE) of up to 0.19% were measured. The EQE was found to increase with thicker films due to more intense photoluminescence; however the IQE remained relatively independent of film thickness.</p> / Master of Applied Science (MASc)

The solar cells used today have a performance rate of about 30% in theory, but most solar cells on the market only utilize about 20% of the energy provided by sunrays. A prominent reason that the performance rate is far from 100% is the large variety of energies and corresponding wavelengths in white light. Tandem solar cells utilize two different solar cells, where the light not absorbed by the top cell travels through the top cell and onto the bottom cell. This can lead to an efficiency upward of 40%.    The purpose of this thesis was to evaluate how to use the machine Bentham PVE300 optimally for measurements of transmittance, reflectance and EQE (external quantum efficiency) with the aim to calculate the IQE (Internal quantum efficiency).   To optimize the efficiency of the tandem cells, the reflectance, transmittance and EQE needed to be measured. To do this Bentham PVE300 was used. The properties of Bentham PVE300 were explored beforehand to get a better understanding of the equipment. By reading the instrument manual and simultaneously working on the instrument, methods for the measurement of EQE, reflectance and transmittance were compiled into a manual.   The results of measurements performed by Bentham PVE300 were compared to results from other equipment to determine if the measurements were viable. Agilent Cary 7000 was used to validate the measurements of reflectance and transmittance. Bentham PVE300 was ultimately determined to be reliable and in most cases more reliable than the currently used instruments.

No / Cardiac x-ray detectors are used to acquire moving images in real-time for angiography and interventional procedures. Detective quantum efficiency (DQE) is not generally measured on these dynamic detectors; the required “for processing” image data and control of x-ray settings have not been accessible. By 2016, USA hospital physicists will have the ability to measure DQE and will likely utilize the International Electrotechnical Commission (IEC) standard for measuring DQE of dynamic x-ray imaging devices. The current IEC standard requires an image of a tilted tungsten edge test object to obtain modulation transfer function (MTF) for DQE calculation. It specifies the range of edge angles to use; however, it does not specify a preferred method to determine this angle for image analysis. The study aimed to answer the question “will my choice in method impact my results?” Four different established edge angle determination methods were compared to investigate the impact on DQE. Methods: Following the IEC standard, edge and flat field images were acquired on a cardiac flat-panel detector to calculate MTF and noise power spectrum, respectively, to determine DQE. Accuracy of the methods in determining the correct angle was ascertained using a simulated edge image with known angulations. Precision of the methods was ascertained using variability of MTF and DQE, calculated via bootstrapping. Results: Three methods provided near equal angles and the same MTF while the fourth, with an angular difference of 6%, had a MTF lower by 3% at 1.5 mm−1 spatial frequency and 8% at 2.5 mm−1; corresponding DQE differences were 6% at 1.5 mm−1 and 17% at 2.5 mm−1; differences were greater than standard deviations in the measurements. Conclusions: DQE measurements may vary by a significant amount, depending on the method used to determine the edge angle when following the IEC standard methodology for a cardiac x-ray detector. The most accurate and precise methods are recommended for absolute assessments and reproducible measurements, respectively. / Funded by Philips Healthcare, NL, and a University of Leeds Career Development Bursery.