Les isolants topologiques constituent une nouvelle classe de matériaux caractérisés par l'association d'un volume isolant et de surfaces conductrices. Avec des propriétés électroniques similaires au graphene, notamment un transport régit par des particules à énergie de dispersion linéaire couramment appelés fermions de Dirac ainsi qu'une protection topologique empêchant tout phénomène de rétrodiffusion, ces matériaux suscitent un intérêt grandissant dans la quête d'une électronique de faible consommation. En effet, la production de courants de spin non-dissipatifs et polarisés ainsi que la formation de courants de spin purs en l'absence de matériaux magnétiques constituent une partie des attentes de ces matériaux topologiques.L'objectif de cette thèse a été de démontrer expérimentalement le potentiel de l'isolant topologique HgTe pour des applications notamment dans le domaine de la l'électronique de spin ou spintronique.Pour ce faire, d'importants efforts ont été mis en œuvre pour améliorer le procédé de croissance par épitaxie par jets moléculaires.La composition chimique, la contrainte ainsi que la qualité des interfaces de la couche de HgTe ont été identifiées comme des axes majeurs de travail et d'optimisation afin d'obtenir une structure de bande inversée, l'ouverture d'un gap de volume, ainsi que pour protéger les propriétés électroniques des états de surface topologiques. Fort de ces caractéristiques, notre matériau possède à priori toutes les qualités nécessaires pour permettre de sonder les propriétés topologiques. Accéder à ces propriétés particulières est en particulier possible par des mesures d'effet Hall quantique sur des structures de type barres de Hall. La fabrication de ces dispositifs a néanmoins requis une attention particulière à cause de la forte volatilité du mercure et a nécessité le développement d'un procédé de nanofabrication à basses températures.Des mesures d'effet Hall quantique à très basses températures ont ensuite été réalisées dans un cryostat à dilution. Tout d'abord des couches épaisses de HgTe ont été mesurées et ont démontrées des mécanismes de transport très complexes mêlant les états de surface topologiques à d'autres contributions attribuées au volume et aux états de surface latéraux. La réduction de l'épaisseur des couches de HgTe a permis de limiter l'impact de ces contributions en les rendant négligeable pour les couches les plus fines. Dans ces conditions, ces structures ont affiché les propriétés attendues de l'effet Hall quantique avec notamment une annulation de la résistance. Avec ces propriétés, l'analyse en température de l'effet Hall quantique a permis de démontrer la nature des porteurs circulant sur les états de surface topologiques et de les identifier à des fermions de Dirac.Avec la mise en évidence de la nature topologique de notre système, l'étape suivante a été d'utiliser les propriétés topologiques et plus particulièrement le blocage entre le moment et le spin d'un électron pour tester le potentiel du système 3D HgTe/CdTe pour la spintronique. Premièrement, des mesures de pompage de spin ont été réalisées et ont mis en exergue la puissance de ces structures pour l'injection et la détection de spin. Deuxièmement, ces structures ont été implémentéessous la forme de jonction p-n dans l'idée de réaliser un premier dispositif de spintronique qui présente à ce jour des premiers signes de fonctionnement. / With graphene-like transport properties governed by massless Dirac fermions and a topological protection preventing from backscattering phenomena, topological insulators, characterized by an insulating bulk and conducting surfaces, are of main interest to build low power consumption electronic building-blocks of primary importance for future electronics.Indeed, the absence of disorder, the generation of dissipation-less spin-polarized current or even the possibility to generate pure spin current without magnetic materials are some of the promises of these new materials.The objective of this PhD thesis has been to experimentally demonstrate the eligibility of HgTe three dimensional topological insulator system for applications and especially for spintronics.To do so, strong efforts have been dedicated to the improvement of the growth process by molecular beam epitaxy.Chemical composition, strain, defect density and sharpness of the HgTe interfaces have been identified as the major parameters of study and improvement to ensure HgTe inverted band structure, bulk gap opening and to emphasize the resulting topological surface state electronic properties. Verification of the topological nature of this system has then been performed using low temperature magneto-transport measurements of Hall bars designed with various HgTe thicknesses. It is worth noting that the high desorption rate of Hg has made the nanofabrication process more complex and required the development of a low temperature process adapted to this constraint. While the thicker samples have evidenced very complex transport signatures that need to be further investigated and understood, the thickness reduction has led to the suppression of any additional contributions, such as bulk or even side surfaces, and the demonstration of quantum Hall effect with vanishing resistance. Consequently, we have managed to demonstrate direct evidences of Dirac fermions by temperature dependent analysis of the quantum Hall effect. The next step has been to use the topological properties and especially the locking predicted between momentum and spin to test the HgTe potential for spintronics. Spin pumping experiments have demonstrated the power of these topological structures for spin injection and detection. Moreover, the implementation of HgTe into simple p-n junction has also been investigated to realize a first spin-based logic element.

Cette thèse est constituée de deux parties indépendantes. La première partie traite du transport dans des gaz d'électrons bidimensionnels dans le régime de l'effet Hall quantique. Dans la deuxième partie, le courant et les corrélations croisées en courant sont étudiées pour des structures hybrides conducteur normal- supraconducteur- conducteur normal (NSN). Dans le régime de haute température de l'effet Hall quantique, la conductance longitudinale est calculée par un formalisme diagrammatique basé sur une approche de conductivité locale. Ce calcul prend en compte l'effet de dérive des électrons sur les lignes équipotentielles du potentiel de désordre et permet la dérivation microscopique de l'exposant critique de transport qui était auparavant seulement conjecturé à partir d'arguments géométriques qualitatifs. Des expressions microscopiques pour la dépendance en température et en champ magnétique de la conductance longitudinale sont dérivées et comparées avec des expériences récentes. Dans le régime de basse température de l'effet Hall quantique, le passage du courant par effet tunnel sur des points selles est étudié à partir de la diffusion de paquets d'onde d'états semi-cohérents. Nous dérivons analytiquement le coefficient de transmission d'un point selle pour le potentiel scalaire dans le graphène et trouvons que les points selles asymétriques brisent la symétrie particule-trou de la conductance. Dans des structures hybrides NSN, nous étudions l'influence de barrières additionnelles sur la conductance (non-locale) et sur les corrélations croisées en courant avec la théorie de diffusion. Dans les systèmes métalliques, où la phase est moyennée, des barrières additionnelles augmentent les processus locaux par réflexion Andreev résonante (reflectionless tunneling), mais ont peu d'influence sur les processus non-locaux et sur les corrélations croisées en courant. Dans les systèmes balistiques, des barrières additionnelles causent des oscillations Fabry-Pérot et permettent de distinguer les différents processus contribuant à la conductance et aux corrélations croisées en courant. / This thesis consists of two independent parts. The first one deals with transport in two dimensional electron gases in the regime of the quantum Hall effect. In the second part, current and current cross-correlations are studied in normal conductor-superconductor-normal conductor (NSN) hybrid structures. In the high temperature regime of the quantum Hall effect, the longitudinal conductance is calculated in a diagrammatic formalism based on a local conductivity approach. It takes the interplay between electron-phonon scattering and the drift motion along equipotential lines of the disorder potential into account and provides a microscopic derivation of the universal transport critical exponent that was up to now only conjectured from qualitative geometrical arguments. Microscopic expressions for the dependence in temperature and magnetic field of the longitudinal conductance are derived and compared to recent experiments. In the low temperature regime of the quantum Hall effect, tunneling over saddle points is studied from the scattering of semi-coherent state wave packets. We derive analytically the transmission coefficient of saddle-points in the scalar potential in graphene and find that asymmetric saddle-points break particle-hole symmetry in the conductance. In three-terminal NSN hybrid structures the influence of additional barriers on the (non-local) conductance and on current cross-correlations is studied with scattering theory. In metallic, phase averaged systems additional barriers lead to an enhancement of local processes by reflectionless tunneling but have little influence on non-local processes and on current cross-correlations. In ballistic systems, additional barriers lead to Fabry-Perot oscillations and allow to distinguish the different contributions to the conductance and to the current cross-correlations.

Cette thèse porte sur la caractérisation et l'étude du magnéto-transport sur les structures de type HgTe/CdTe sous contraintes développant un transport de surface topologique tout en étant isolant en volume ; on nomme cette nouvelle classe de matériau isolant topologique 3D.Je développerai dans cette thèse la caractérisation et définition d'un isolant topologique 2D/3D pour ensuite me focalise plus particulièrement sur les systèmes II-VI HgTe/CdTe.Une partie de la thèse développe les conditions de croissance réalisées au CEA/Leti ainsi que la caractérisation du matériau par rayon X. La structure de bande des surfaces est caractérisée par ARPES.Une troisième partie traite de la fabrication des barres de Hall nécessaires à la caractérisation du comportement topologique des surfaces. La partie développement expérimentale est également fournie.La dernière partie traite du magnétotransport réalisé avec ces barres de Hall à faible et fort champ magnétique. Le comportement ambipolaire, une phase de Berry non triviale, l'antilocalisation faible et l'effet Hall quantique entier dans ces structures sont abordés tout tentant de fournir une interprétation des résultats obtenus. / This report deal with caracterisation of magnetotransport in HgTe/CdTe structures bulk strained in that a topological surface transport is predicted. This new kind of material is a 3D topological insulator.In this thesis, I will explain what means 3D/2D topological insulator before focusing on II-VI system lijke HgTe/CdTe.Next, I will discuss about growing conditions performed in CEA/Leti and then material caracterisation by X-ray. Surfaces band structures were also, observed by ARPES, underligned in the report.A third part deal with Hall bars design and conception in order to emphasize topological behavior of these surfaces.The last part shows the results obtained on these Hall bars with magnetotransport at low and high magnetic field. Ambipolaire behaviour, non trivial Berry phase, weak antilocalization and the interger quantum hall effect in HgTe/CdTe structures are studied and a possible interpretation of these results are given.

Submitted by Vasti Diniz (vastijpa@hotmail.com) on 2017-09-11T14:24:18Z No. of bitstreams: 1 arquivototal.pdf: 2910617 bytes, checksum: 78d320ecf6eab76dd1627257ec1aa34d (MD5) / Made available in DSpace on 2017-09-11T14:24:18Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 2910617 bytes, checksum: 78d320ecf6eab76dd1627257ec1aa34d (MD5) Previous issue date: 2017-03-16 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / Electromagnetic fields acting on particles have been extensively studied in different areas of physics. In quantum mechanics for example, effects such as Aharonov-Bohm, Landau levels and Hall conductivity, have always motivated new papers including analogous inertial models. Inertial effects play an important role in classical mechanics, but have been largely ignored in quantum mechanics. However, the analogy between inertial forces on mass particles and electromagnetic forces on charged particles is not new. Another factor that may influence the classical and quantum behavior of particles is geometry. An element related to geometry that has been extensively studied in several areas is the topological defect. Topological defects represent an interface between areas such as cosmology, gravitation, and condensed matter. Such defects in condensed matter can be developed through the classical theory of elasticity. However, due to the interdisciplinarity of this theme, approaches from gravitation can also describe them. Based on this analogy, the medium formed by a topological defect is characterized by a metric tensor. From this approach, several problems can be discussed by analyzing the influence of the topological defect in the solution of the problem. In this work, it will be discussed how magnetic field, rotation and topological defects, especially the disclination, influence in the Landau Levels and the Hall conductivity for a noninteracting planar two-dimensional electron gas. First we will discuss the influence of each of these elements and then the influence of all of them simultaneously. / A atuação de campos eletromagnéticos em partículas têm sido extensivamente estudada em diferentes áreas da física. Em mecânica quântica por exemplo, efeitos como Aharonov-Bohm, níveis de Landau e condutividade Hall, têm sempre motivado novos trabalhos inclusive para modelos análogos inerciais. Os efeitos inerciais desempenham um papel importante na mecânica clássica, mas tem sido largamente ignorados em mecânica quântica. No entanto, a analogia entre forças inerciais sobre partículas de massa e forças eletromagnéticas sobre partículas carregadas não é nova. Um outro fator que pode influenciar no comportamento clássico e quântico de partículas é a geometria. Um elemento relacionado a geometria e que tem sido bastante estudado em diversas áreas, é o defeito topológico. Os defeitos topológicos representam uma interface entre áreas como cosmologia, gravitação e matéria condensada. Tais defeitos em matéria condensada podem ser desenvolvidos através da teoria clássica da elasticidade. Contudo, devido a interdisciplinaridade desse tema, abordagens provenientes da gravitação podem também descrevê-los. Com base nessa analogia, caracteriza-se o meio formado por um defeito topológico mediante um tensor métrico. A partir dessa abordagem, diversos problemas podem ser discutidos analisando a influência do defeito topológico na solução do problema. Nesse trabalho, será discutido como campo magnético, rotação e defeitos topológicos, em especial a desclinação, influenciam os níveis de Landau e a condutividade Hall para um gás de elétrons bidimensional planar não interagente. Primeiramente discutiremos a influência de cada um desses elementos e em seguida a influência de todos simultaneamente. Será mostrado como a rotação quebra a degenerescência dos níveis de Landau aumentando consequentemente a condutividade Hall. Será mostrado também que acoplamento dos três elementos gera uma região para campos magnéticos fracos com sem estados ligados. Com um outro ponto de partida mostraremos também que a rotação pode ser utilizada para sintonizar a condutividade Hall.

Made available in DSpace on 2015-03-26T13:35:22Z (GMT). No. of bitstreams: 1 texto completo.pdf: 1377074 bytes, checksum: 9d0bcaa0daae6ad97072fe3a335f2cad (MD5) Previous issue date: 2007-02-26 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / The quantum Hall effect (QHE) remains the target of an immense research effort twenty six years after its discovery. In fact this phenomenon has been a source of fundamental questions. Among the open problems in the field is the spatial distribution of the electric current in the quantum Hall effect. This question has been in debate since its discovery. Some experimental and theoretical results indicate the Hall current is distributed uniformly across the width of a Hall bar. Contradictorily, other results suggest the current flows mostly in a narrow region along the device s edges. Prominent works by Yahel et al. [PRL 76, 2149 (1996) and PRL 81, 5201 (1998)] shed new lights on the subject by using an experimental technique that came to known as inductive coupling . This method is based on the measurement of the nanovoltage signal induced by an alternating Hall current in a compact coil, carefully positioned above one edge of a Hall bar. It is perhaps the least invasive method available to study the current distribution in the QHE. It remained nonetheless a challenging experiment, as regards the positioning and making of the coil and the measurement of the minute induced voltage. We showed with calculations that it is possible to greatly simplify the aforementioned technique and make it more sensitive and useful by fabricating the coil on the chip containing the Hall bar. The concept was tested experimentally replacing the semiconductor Hall bar with a metal strip whose current distribution is known to be uniform from the electrodynamics. The voltage induced by the current in the metal strip in a nearby coil fits was measured. It fits in precisely, in magnitude and phase, with the values calculated. As our most important contribution, we found out that the presence of a two dimensional electron gas (2DEG), located 200 nm underneath the coil, increases the induced signal by thirty times. The magnitude and phase of the signal indicate it comes mostly from the current induced in the 2DEG by the alternating Hall current. This amplification effect renders a stronger signal with a sample containing a milimetric size Hall bar and a coil with ten turns, conveniently fabricated by simple optical lithography, than the signal measured by Yahel, using a ten times larger Hall bar and a handcrafted coil with 3,000 turns. We speculate that the effect of the 2DEG shall allow the use of our technique to map the current distribution in the QHE and also to study nanoscopic magnetic systems. / O efeito Hall quântico (EHQ) permanece como foco de um imenso esforço de pesquisa vinte e seis anos após sua descoberta. De fato este fenômeno tem levantado uma série de questões fundamentais. Entre os problemas em aberto nesse campo está a distribuição espacial de corrente elétrica durante o efeito Hall quântico. Esta questão tem sido continuamente debatida desde a sua descoberta. Alguns experimentos e modelos teóricos indicam que a corrente se distribui uniformemente pela largura da ponte Hall. Contraditoriamente, outros resultados sugerem que a corrente flui predominantemente nas bordas do dispositivo. Trabalhos importantes de Yahel et al. [PRL 76, 2149 (1996) e PRL 81, 5201 (1998)] trouxeram novas pistas sobre o assunto usando a técnica experimental que ficou conhecida como "acoplamento indutivo . O método é baseado na medida da tensão induzida (da ordem de dezenas de nanovolts) por uma corrente Hall alternada em uma bobina compacta, cuidadosamente posicionada acima de uma das bordas da ponte Hall. Ele é talvez o método menos invasivo disponível para estudar a distribuição de corrente no EHQ. Entretanto, trata-se de uma técnica experimentalmente desafiadora no que se refere ao posicionamento e a fabricação da bobina e a medida tênue da tensão induzida. Mostramos com cálculos que é possível simplificar grandemente a técnica mencionada e fazê-la mais sensível e útil fabricando a bobina no mesmo chip da ponte Hall. O conceito foi testado experimentalmente substituindo a ponte Hall semicondutora por uma tira metálica cuja distribuição de corrente é conhecida a priori da eletrodinâmica. Medimos a tensão induzida pela corrente na tira metálica na bobina vizinha. O resultado ajusta-se perfeitamente, em magnitude e fase, aos valores calculados. Como nossa contribuição mais importante, descobrimos que a presença de uma gás bidimensional de elétrons (2DEG), localizado a 200 nm abaixo da bobina, aumenta o sinal induzido por um fator de trinta. A magnitude e a fase do sinal indicam que ele tem origem na corrente induzida no 2DEG pela corrente Hall alternada. O efeito de amplificação fornece um sinal mais forte em uma amostra contendo uma ponte Hall com dimensão milimétrica e com uma bobina com dez voltas, convenientemente fabricada por litografia óptica, do que o sinal medido por Yahel, usando uma ponte Hall dez vezes maior e uma bobina manufaturada com 3000 voltas. Especulamos que o efeito do 2DEG poderá permitir que a nossa técnica seja usada para mapear a distribuição de corrente no EHQ e também no estudo de sistemas magnéticos com dimensões nanométricas.

Neste trabalho foram estudadas as fases topológicas não triviais presentes em sistemas formados pela deposição de átomos de grafeno. Encontramos que quando um átomo hibridiza fortemente com o grafeno, apresenta um momento magnético e um forte spin-órbirta é possível a formação de uma rede hexagonal de baricentros que efetivamente gera uma estrutura de bandas característica de um efeito hall quântico anômalo. Especificamente, determinamos que o Ru satisfaz estas características. Quando este metal é depositado em uma configuração triangular no grafeno ocorrem picos na densidade de estados localizados no centro geométrico (baricentro) dos triângulos formados pelos Ru. Estes picos estão distribuídos de forma hexagonal e efetivamente geram uma estrutura de bandas que nas proximidades do nível de Fermi apresenta uma configuração de spin característica do efeito Hall quântico anômalo. Adicionalmente, encontramos que o sistema composto pela absorção de Ba ou Sr no grafeno favorece a formação do efeito Hall quântico de spin. Neste sistema, o acoplamento spin-órbita (SOC) gera um gap mais de 1000 vezes maior ao período no grafeno prístino. Para o estudo destes sistemas, implementamos no código SIESTA a aproximação on-site do acoplamento spin-órbita via o formalismo dos pseudopotenciais relativísticos de norma conservada. Nossa implementação foi testada a partir do estudo de fenômenos já conhecidos: i) o strong spin-splitting gerado no grafeno pela adsorção de Au, ii) o efeito hall quântico de spin no poço quântico de HgTe/CdTe e, iii) a formação de estados topológicos na superfície do Bi2Se3 e as fases magnéticas deste material com átomos de Mn adsorvidos. / In this work, were studied the non-trivial topological phases present in systems formed by deposition of atoms in graphene. We found that when an atom hybridizes strongly with grapheme, has a magnetic moment and a strong spin-orbit it is possible the formation of a hexagonal network of barycentres that effectively generates a structure band characteristic of a quantum anomalous Hall effect. Specifically, we determined that Ru satisfies these characteristics. When this metal is deposited in a triangular configuration in grapheme, peaks occur in the density of localized states in the geometric center (centroid) of the triangles formed by Ru. These peaks are distributed in a hexagonal structure and effectively generates a band structure that near the Fermi level has a spin configuration characteristic of the spin quantum Hall effect anomalous. Additionally, we found that the system composed by the adsorption of Ba or Sr in grapheme, promotes the formation of spin quantum Hall effect. In this system, the spin-orbit coupling (SOC) generates a gap more than 1000 times grater that predicted in pristine praphene. To study these systems, wu implemented in the code SIESTA the on-site approach of the spin-orbit coupling throught the formalism of norm conserved relativistic pseudo potentials. Our implementation was tested from the study of phenomena already known: i) the strong spin-splitting generated in graphene by adsorption of Au, ii) the quantum spin Hall effect in quantum well of HgTe / CdTe and, iii) formation of topological states in the surface of Bi2Se3 and the magnetic of this material with Mn atoms adsorved.

Apresentamos neste trabalho algumas propriedades do transporte de cargas de heteroestruturas contendo pontos-quânticos. Três tópicos foram explorados: no primeiro, observamos um comportamento anômalo nos platôs do efeito Hall quântico, que atribuímos à existência de estados de borda contra-rotativos; no segundo, determinamos o tempo de decoerência do sistema bidimensional de elétrons em função do estágio evolutivo de pontos-quânticos de InAs autoformados nas suas proximidades. Concluímos que a tensão mecânica acumulada durante o crescimento epitaxial \"congela\" os elétrons, reduzindo a taxa de decoerência; finalmente, testamos algumas das possíveis configurações de heteroestruturas visando a construção de fotodetectores baseados em pontos-quânticos. Observamos que a repetição da região-ativa pode ser utilizada como um parâmetro no controle das mobilidades quânticas e, por conseguinte, das propriedades de operação desses detectores. / In this work we present transport properties of heterostructures with quantum-dots. Three subjects were exploited: on the first one, we observed anomalous quantum Hall plateaus, for wich we attributed to the existence of counter-rotating edge-states; on the second subject, we determined the decoherence time of the bidimensional electron system as a function of the evolutionary stage of nearby self-assembled quantum-dots. We concluded the mechanical stress accumulated during the epitaxial growth \"freezes\" the electrons, reducing the decoherence rate; finally, we tested some base-heterostructures of infrared photodetectors. We observed the stacking of active-regions can be used as a parameter to control quantum-mobilities and, as a consequence, the operation properties of such detectors.

Heteroestruturas digitais magnéticas (DMHs) são estruturas semicondutoras em que a distribuição de impurezas magnéticas (Mn) restringe-se a alguns arranjos bidimensionais (monocamadas) regularmente espaçados entre si. Na presença de um campo magnético, a interação de troca sp-d entre os momentos magnéticos localizados e os portadores itinerantes é responsável por um desdobramento de spin gigante, da ordem ou até superior que a separação cíclotron dos níveis de Landau. Aqui eu calculo a estrutura eletrônica de poços quânticos digitais magnéticos do grupo II-VI. Resolvo as equações de Kohn-Sham da teoria do funcional da densidade dependente de spin na aproximação de massa efetiva. Eu então calculo diversas propriedades magnetoópticas e de transporte relevantes experimentalmente. Em particular, eu investigo a física dependente de spin presente nestes sistemas sob dois diferentes pontos de vista. Primeiramente o enfoque é no efeito do magnetismo do Mn sobre o potencial dependente de spin da interação de troca sp-d, em particular nos efeitos da aglomeração antiferromagnética e da diluição do seu perfil de concentração (segregação e interdifusão). Ao considerar estes efeitos eu reproduzo resultados experimentais para desdobramento de spin $Delta_E$ e tempos de espalhamento de spin $tau_$ [S. A. Crooker et al., Phys. Rev. Lett. 75, 505 (1995); Phys. Rev. B 61, 1736 (2000)]. Na segunda parte eu mudo o enfoque para a física de gases de elétrons bidimensionais (2DEGs) altamente polarizados e mostro a importância da forte dependência de spin das contribuições de muitos corpos (troca e correlação) presentes nestes sistemas. Em particular, estes efeitos são relevantes para o surgimento de fases de ferromagnetismo de efeito Hall quântico. Eu calculo o magnetotransporte no regime de efeito Hall quântico para DMHs baseadas em ZnSe e CdTe. Meus resultados reproduzem resultados experimentais [R. Knobel et al., Phys. Rev. B 65, 235327 (2002); J. Jaroszynski et al., Phys. Rev. Lett. 89, 266802 (2002)] para a dependência com o campo magnético, com a temperatura, o aparecimento de picos anômalos e o surgimento de curvas de histerese em várias propriedades físicas. / Digital magnetic heterostructures (DMHs) are semiconductor structures with magnetic impurities (Mn) restricted to some planar arrangements (monolayers) regularly spaced. In the presence of an external magnetic field, the sp-d exchange interaction between the localized magnetic moments and the itinerant carriers is responsible for a giant spin splitting, of the order of, or even greater than, the cyclotron separation between Landau levels. Here I calculate the electronic structure of group II-VI digital magnetic quantum wells. I solve the Kohn-Sham equations of the spin-density functional theory within the effective mass approximation. Then I calculate some magneto-optical and transport properties which are experimentally relevant. In particular, I investigate the spin dependent physics of these systems from two different points of view. First, I focus on effects of the Mn magnetism on the sp-d exchange spin dependent potential, particularly the effect of antiferromagnetic clustering and the effect of dilution (segregation and interdiusion) of the Mn content prole. By considering these effects I reproduce experimental results for the spin splitting $Delta_E$ and spin scattering times $tau_$ [S. A. Crooker et al., Phys. Rev. Lett. 75, 505 (1995); Phys. Rev. B 61, 1736 (2000)]. In the second part I move on to the physics of spin-polarized two-dimensional electron gases (2DEGs), and show the relevance of the strong dependence of the many-body contributions (exchange and correlation) with the spin polarization. In particular, these effects are relevant for the development of quantum Hall ferromagnetic phases. I calculate magneto- transport in the quantum Hall eect regime for DMHs consisting of ZnSe and CdTe. My results reproduce experimental results [R. Knobel et al., Phys. Rev. B 65, 235327 (2002); J. Jaroszynski et al., Phys. Rev. Lett. 89, 266802 (2002)] for the dependence with magnetic eld, temperature, development of anomalous resistivities spikes and hysteretic behaviors in many physical properties.

Cette thèse est dédiée à l'analyse de signaux électriques quantiques dans les canaux de bords de l'effet Hall quantique. En particulier, j'ai utilisé l'analogue électronique de l'interféromètre de Hong, Ou et Mandel pour réaliser des expériences d'interférométrie à deux particules. En entrée de l'interféromètre sont placées des sources d'électrons uniques qui permettent l'injection contrôlée d'excitation ne contenant qu'une seule particule. Les canaux de bords guident ces excitations jusqu'à l'interféromètre. Il s'agit d'un contact ponctuel quantique qui agit comme une lame semi-réfléchissante pour les électrons. On mesure en sortie les fluctuations basse fréquence du courant. Cela nous permet de mesurer le recouvrement entre les fonctions d'onde à un électron émises à chaque entrée. Grâce à cette mesure de recouvrement, j'ai pu caractériser à des échelles de temps sub-nanoseconde, le rôle des interactions Coulombienne sur la propagation de l'électron unique. J'ai pu montrer que ces interactions étaient la source principale de la décohérence du paquet d'onde mono-électronique et qu'elles décomposent l'électron sur des modes collectifs. C'est une manifestation de la fractionalisation de l'électron qui apparaît dans les systèmes uni-dimensionnel en interactions. Grâce à cet interféromètre, j'ai pu aussi implémenter un protocole de tomographie qui permet de reconstruire toute les informations à une particule de n'importe quel signal émis dans le canal de bord. / This thesis is dedicated to processing of quantum electronic signals in the edge channels of the integer quantum Hall effect. In particular, I used the electronic analogue of the Hong, Ou and Mandel interferometer to realize two particle interference measurements. The interferometer consists of a quantum point contact (QPC) that acts as an electronic beam-splitter. The inputs are fed by single electron sources whose single particle excitations are guided toward the QPC by quantum Hall edge channels. We measure low frequency current noise in one of the output to measure overlaps of first order coherence functions. With this interferometer I could characterize on short time scales the role of Coulomb interactions on single electron propagation. I could show that interactions are the main source of decoherence of the single particle wave packet and that the electron decomposes into collective modes. This is due to fractionalisation which is a hallmark of interacting unidimensional systems. Thanks to this interferometer I could also implement a universal tomography protocol to dissect all single particle information of any arbitrary current. This enables the study of non-classical propagating state.

Magneto-transport study on high mobility electron systems in both 2D- and 3D- case has attracted intense attention in past decades. This thesis focuses on the magnetoresistance behavior in 3D topological insulator Bi2Te3 and GaAs/AlGaAs 2D electron system at low magnetic field range 0.4T the first drop at T~3.4K to tndium superconductor and considered the second drop at lower temperature as the proximity effect that occurred near the interface between these two materials. On the other hand, GaAs/AlGaAs heterostructure, as a III-V semiconductor family, has been extensively studied for exploring many interesting phenomena due to the extremely high electron mobility up to 10^7 cm^2/Vs. In this thesis, two interesting phenomena are present and discussed in a GaAs/AlGaAs system, which are the electron heating induced tunable giant magnetoresistance study and phase inversion in Shubnikov-de Haas oscillation study, respectively. By applying elevated supplementary dc current bias, we found a tunable giant magnetoresistance phenomenon which is progressively changed from positive to giant negative magnetoresistance. The observed giant magnetoresistance is successfully simulated with a two-term Drude model at all different dc biases, I_{dc}, and temperature, T. In addition, as increasing the dc current bias, a phase inversion behavior was observed in Shubnikov-de Haas oscillation, which was further demonstrated by the simulation with an exponential damped cosine function. This thesis also presents an ongoing project, which is the observation and fabrication of 2D layered materials. The studied 2D layered materials includes graphene, biron nitride, Molybdenum disulfide, etc. At the end, a future work about fabrication of the 2D layered materials devices as well as the suggestion about the measurement are discussed.