Recently, the resistance switching random access memory (ReRAM) in several MIM systems has been studied extensively for applications to the next generation non-volatile memory (NVM) devices and memristors since the scaling of conventional memories based on floating gate MOSFETs is getting increasingly difficult. ReRAM is being considered one of the most promising candidates for next generation non-volatile memory due to its relatively high switching speed, superior scalability, low power consumption, good retention and simple fabrication method. Cu/TaOX/Pt resistive switching device is a very good candidate due to its well performance and well characterization. However, since platinum (Pt) acting as the inert electrode is not economical efficient for industrial production, a compatible replacement of Pt is highly desirable. The device property of Co based resistive switching devices has been explored in this work. Compared with Pt devices, electric characterization of the fabricated Cu/TaOX/Co devices exhibits very similar FORM, SET and RESET voltages for Cu conductive filaments. However, for the oxygen vacancy (VO) filament the Co device has a significant smaller FORM, SET and RESET voltages of VO filament, which can be partly attributed to the work function difference between Pt and Co of 1.35 V and partly to the impaired integrity properties of Co vs Pt inert electrode. The limit of SET-RESET operations is mainly due to the geometrical shape of the Cu conductive filament is more cylindered rather than Cone-like shape as well as the high Joules heat dissipation. What’s more, ReRAM is also the most promising candidate for a flexible memory, as a variety of materials can be used both inorganics, organics and even hybrid nanocomposites. Besides inorganic ReRAM device, we also fabricated an organic ReRAM device with the structure Cu doped PANI-CSA/O-AA/Al. We have manufactured ReRAM based on Cu-doped PANI-CSA polymer electrode, O-AA as the polymer solid electrolyte and Al as the bottom electrode for the first time. This polymer device shows a significantly lower forming voltage than inorganic ReRAM devices such as Cu/TaOX/Pt. Our results also demonstrate that our organic ReRAM is a promising candidate for inexpensive candidate for inexpensive and environmentally friendly memory devices. We have demonstrated that the FORM operation of the polymer devices depends on the concentration of Cu+ ions as well as the thickness of the polymer electrode. / M.S. / Although the scaling of conventional memories such as volatile dynamic random access memory (DRAM) and non-volatile flash technology is becoming increasingly difficult, new types of non-volatile memories, such as resistive switching memories, have recently attracted the attention of both industry and academia. Resistive switching memory is considered as the next generation non-volatile memory because of its excellent scalability, high switching speed, simple structure and low power consumption. What’s more, ReRAM is also a promising candidate for a flexible memory, as a variety of materials can be used both inorganics, organics and even hybrid nanocomposites. ReRAM shows unique nanoionics based filamentary switching mechanism. Besides the nonvolatile memory applications, resistive switching devices implement the formation of a memristor, which is the fourth basic electrical component and can be used for neuromorphic computing. First, we report the device property of Co based resistive switching devices with a structure of Cu/TaOX/Co layers. The I-V characteristics of the manufactured Cu/TaOX/Co devices shows very similar FORM, SET and RESET voltages for Cu conductive filaments compared with Pt device. However, the Co device has a significant smaller FORM, SET and RESET voltages for oxygen vacancy (VO) filaments, which can be partly attributed to the work function difference between Pt and Co of 13.5 eV and partly to the impaired integrity properties of Co vs Pt inert electrode. The main reason for the limit of SET-RESET operations is that high Joules heat dissipation. With high Joules heat accumulation, the maximum switching cycles of Co devices is up to 8 times, while in the case of Pt cases, it is almost unlimited. Secondly, we fabricated an organic ReRAM device with the structure Cu-doped PANI-CSA/O-AA/Al. Cu-doped PANI-CSA polymer electrode has been introduced for the first time as the top polymer electrode of a ReRAM device. Compared to inorganic ReRAM device, this polymer device can be operated at a significantly lower forming voltage than inorganic devices such as Cu/TaOX/Pt. We have demonstrated that our organic ReRAM is a promising candidate for environmentally friendly and flexible memory devices. Our results demonstrate the FORM operation of the polymer devices depend on the concentration of Cu+ ions as well as the thickness of the polymer top layer.

Novel devices are being investigated as artificial synapse candidates for neuromorphic computing. These memory devices share the characteristics of an electronic element called memristor. The memristor can be regarded as a resistor with a history dependent resistance, which mimics the plasticity of a biological synapse. The present work presents various types of candidate devices that have been proposed in neuromorphic research, describes how they mimic a biological synapse and how they can be employed in artificial neuron network architectures.

Transportphänomene treten in biologischen und künstlichen Systemen auf allen Längenskalen auf. In dieser Arbeit untersuchen wir sie für verschiedene Systeme aus einer mesoskopischen Perspektive, in der Fluktuationen physikalischer Größen um ihre Mittelwerte eine wichtige Rolle spielen. Im ersten Teil untersuchen wir die persistente Bewegung aktiver Brownscher Teilchen mit zusätzlichem Drehmoment, wie sie z.B. für Spermien oder Janus Teilchen auftritt. Wird ihre Bewegung auf einen Tunnel variierender Breite beschränkt, so setzt im thermischen Nichtgleichgewicht Transport ein; ungerichtete Fluktuationen des rauschhaften Antriebs werden gleichgerichtet. Hierdurch wird ein neuer Ratschentyp realisiert. Im zweiten Teil untersuchen wir den intrazellulären Cargotransport in den Axonen von Nervenzellen mithilfe molekularer Motoren. Sie werden als asymmetrischer Ausschlussprozess simuliert. Zusätzlich können die Cargos zwischen benachbarten Motoren ausgetauscht werden. Dadurch lassen sich charakteristische Eigenschaften des langsamen axonalen Transports mit einer einzigen Motorspezies reproduzieren. Bewerkstelligt wird dies durch die transiente Anbindung der Cargos an rückwärtslaufende Motorstaus. Im dritten Teil diskutieren wir resistive switching, die nicht volatile Widerstandsänderung eines Dielektrikums durch elektrische Impulse. Es wird für Anwendungen im Computerspeicher ausgenutzt, dem resistive RAM. Wir schlagen ein auf Sauerstoffvakanzen basierendes stochastisches Gitterhüpfmodell vor. Wir definieren binäre logische Zustände mit Hilfe der zugrunde liegenden Vakanzenverteilung und definieren Schreibe- und Leseoperationen durch Spannungsimpulse für ein solches Speicherelement. Überlegungen über die Unterscheidbarkeit dieser Operationen unter Fluktuationen zusammen mit der Deutlichkeit der unterschiedlichen Widerstandszustände selbst ermöglichen es uns, eine optimale Vakanzenzahl vorherzusagen. / Transport phenomena occur in biological and artificial systems at all length scales. In this thesis, we investigate them for various systems from a mesoscopic perspective, in which fluctuations around their average properties play an important role. In the first part, we investigate the persistent diffusive motion of active Brownian particles with an additional torque. It can appear in many real life systems, for example in sperm cells or Janus particles. If their motion is confined to a tunnel of varying width, transport arises out of thermal equilibrium; unbiased fluctuations of the noisy drive are rectified. This way, we have realized a novel kind of ratchet. In the second part, we study intracellular cargo transport in the axons of nerve cells by molecular motors. They are modeled by an asymmetric exclusion process. In a new approach, we add a cargo exchange interaction between the motors. This way, the characteristics of slow axonal transport can be accounted for with a single motor species. It is explained by the transient attachment of cargos to reverse walking motors jams. In the third part, we discuss resistive switching, the non-volatile change of resistance in a dielectric due to electric pulses. It is exploited for applications in computer memory, the resistive random access memory (ReRAM). We propose a stochastic lattice hopping model based on the on oxygen vacancies. We define binary logical states by means of the underlying vacancy distributions, and establish a framework of writing and reading such a memory element with voltage pulses. Considerations about the discriminability of these operations under fluctuations together with the markedness of the resistive switching effect itself enable us to predict an optimal vacancy number.

Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'influence du champ électrique et (2) la commutation résistive est un processus stochastique, donc régi par une probabilité. La région active est représentée par un réseau de connexions verticales, chacune composée de trois éléments électriques : deux d'entre eux sont de faible résistance tandis que le troisième agit comme un disjoncteur et peut être soit de résistance faible (LR) ou élevée (HR). Dans ce modèle, le changement d'état du disjoncteur est régi par une probabilité de commutation (P$_{s}$) qui est comparée à un nombre aléatoire « p ». P$_{s}$ dépend de la chute de tension le long du disjoncteur et de la tension de seuil, V$_{set}$ ou V$_{reset}$, pour définir les processus de « set » (HR à LR) et « reset » (LR à HR). Deux mécanismes de conduction ont été envisagés : ohmique pour un état LR et pour un état de résistance élevée l'effet tunnel facilité par un piège (TAT). Le modèle a été implémenté avec le langage de programmation Python et fonctionne avec une bibliothèque C externe qui optimise les calculs et le temps de traitement. Les résultats de la simulation ont été validés avec succès en les comparant avec des courbes courant-tension (IV) mesurées sur dispositifs ReRAM réels dont l'oxyde était fait de HfO$_{2}$ et pour neuf aires différentes. La flexibilité et la facilité de mise en œuvre de ce modèle de commutation résistive en font un outil puissant pour l'étude des ReRAM / A model for the switching of resistive random-access memories (ReRAM) is presented. This model is based on two hypotheses: (1) the resistive switching is caused by changes that occur in the narrow zone (active region) of the conductive filament under the influence of the electric field and (2) the resistive switching is a stochastic process governed by a switching probability. The active region is represented by a net of vertical connections, each one composed of three electrical elements: two of them are always low resistive (LR) while the third one acts as a breaker and can be low or high resistive (HR). In the model, the change of the breaker's state is governed by a switching probability (P$_{s}$) that is compared with a random number $p$. P$_{s}$ depend on the voltage drop along the breaker and the threshold voltage, V$_{set}$ or V$_{reset}$ for set (HR to LR) or reset (LR to HR) processes. Two conduction mechanism has been proposed: ohmic for the low resistive state and trap-assisted tunneling (TAT) for the high resistive state. The model has been implemented in Python and works with an external C-library that optimizes calculations and processing time. The simulation results have been successfully validated by comparing measured and modeled IV curves of HfO$_{2}$-based ReRAM devices of nine different areas. It is important to note that the flexibility and easy implementation of this resistive switching model allow it to be a powerful tool for the design and study of ReRAM memories

Defects in the functional oxides play an important role in electronic devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the replacement of Si channel with Ge channel is required. However, the performance of Ge MOSFETs suffers from Ge/oxide interface quality and reliability problems, which originates from the charge traps and defect states in the oxide or at the Ge/oxide interface. The sub-oxide layers composed of GeII states at the Ge/GeO2 interface seems unavoidable with normal passivation methods like hydrogen treatment, which has poor electrical properties and is related to the reliability problem. On the other hand, ReRAM works by formation and rupture of O vacancy conducting filaments, while how this process happens in atomic scale remains unclear. In this thesis, density functional theory is applied to investigate the defect behaviours in oxides to address existing issues in these electronic devices. In chapter 3, the amorphous atomic structure of doped GeO2 and Ge/GeO2 interface networks are investigated to explain the improved MOSFET reliability observed in experiments. The reliability improvement has been attributed to the passivation of valence alternation pair (VAP) type O deficiency defects by doped rare earth metals. In chapter 4, the oxidation mechanism of GeO2 is investigated by transition state simulation of the intrinsic defect diffusion in the network. It is proposed that GeO2 is oxidized from the Ge substrate through lattice O interstitial diffusion, which is different from SiO2 which is oxidized by O2 molecule diffusion. This new mechanism fully explains the strange isotope tracer experimental results in the literature. In chapter 5, the Fermi level pinning effect is explored for metal semiconductor electrical contacts in Ge MOSFETs. It is found that germanides show much weaker Fermi level pinning than normal metal on top of Ge, which is well explained by the interfacial dangling bond states. These results are important to tune Schottky barrier heights (SBHs) for n-type contacts on Ge for use on Ge high mobility substrates in future CMOS devices. In chapter 6, we investigate the surface and subsurface O vacancy defects in three kinds of stable TiO2 surfaces. The low formation energy under O poor conditions and the +2 charge state being the most stable O vacancy are beneficial to the formation and rupture of conducting filament in ReRAM, which makes TiO2 a good candidate for ReRAM materials. In chapter 7, we investigate hydrogen behaviour in amorphous ZnO. It is found that hydrogen exists as hydrogen pairs trapped at oxygen vacancies and forms Zn-H bonds. This is different from that in c-ZnO, where H acts as shallow donors. The O vacancy/2H complex defect has got defect states in the lower gap region, which is proposed to be the origin of the negative bias light induced stress instability.