This thesis investigates the dynamics of a set of 8-600 Schwarzschild masses, randomly distributed inside cells which tessellate a 3-sphere. Furthermore the contents of each cell are mirror images of its neighbor. This symmetry give rise to a locally rotationally symmetric (LRS) curve, along which the Einstein field equations governing dynamics can be exactly integrated. The result is an irregular model consisting of discrete matter content, but where the dynamics is easy to calculate. We see that these local inhomogeneities will cause behavior deviating from the spherical dust-filled FLRW model. For instance, there are cases where configurations exhibit acceleration along the LRS curve, even though the content consists solely of ordinary matter with a vacuum filled exterior and no cosmological constant. / Denna avhandling undersöker konfigurationer av 8-600 Schwarzschild-massor, som är slumpmässigt utplacerade inom celler som tessellerar en 3-sfär. Utöver det är även innehållet i varje cell en spegelbild av granncellen. Denna symmetri ger upphov till en lokalt rotationssymmetrisk (LRS) kurva där Einsteins fältekvationer som beskriver dynamiken längs med är exakt integrerbara. Resultatet är en oregelbunden modell som består av diskreta massor, men vars dynamik är enkel att beräkna. Vi ser att dessa lokala inhomogeniteter ger upphov till beteenden som avviker från den sfäriska partikel-fyllda FLRW-modellen. Till exempel uppstår konfigurationer som uppvisar acceleration längs med LRS-kurvan, trots att innehållet består endast av ordinära massor med vakuum utanför och ingen kosmologisk konstant.

Les myopathies héréditaires représentent un large groupe de pathologies neuromusculaires progressives affectant l’intégrité générale, structurelle et fonctionnelle du muscle squelettique. Elles engendrent une myriade de symptômes, ternissant qualité de vie et autonomie, et pouvant même s’avérer mortelles. La pose d’un diagnostic juste peut être difficile, entravée notamment par une faible prévalence de certaines myopathies, l’importante hétérogénéité clinique existante, et le chevauchement symptomatique des diverses formes. Malgré les avancées récentes faites dans le domaine des techniques de séquençage qui contribuent grandement au dépistage, au moins 25% des individus atteints de myopathies demeurent sans diagnostic génétique. Suivant l’investigation clinique d’un patient (Z46) atteint d’une myopathie distale à apparition tardive, l’analyse par séquençage ARN (RNA-seq) a révélé un variant non-sens homozygote de signification inconnue (VUS) à la fin de l’exon 5 du gène MLIP. Les niveaux d’expression génique altérés de « Protéine musculaire interagissant avec LMNA » (MLIP) et son partenaire « Lamine de type A » (LMNA) ont poussé à approfondir l’investigation. Davantage d’altérations -omiques furent identifiées par les techniques de RT-PCR, qPCR et WB, renforçant l’effet pathogénique du variant. Consolidant tous les résultats, le séquençage de longues lectures (LRS) a révélé un mécanisme d’épissage alternatif compensatoire de MLIP, qui tend à contourner et minimiser la production de transcrits arborant l’exon 5 muté. La présente étude vise à : 1) apporter un diagnostic génétique définitif au patient Z46, posant le variant MLIP comme causatif de la myopathie distale; 2) démontrer le pouvoir diagnostique du RNA-seq dans la résolution de ce cas complexe par l’identification et l’élucidation du VUS; 3) témoigner de l’étendue de la caractérisation transcriptomique offerte par les longues lectures du LRS. Couplé à cela, la modélisation du variant pathogénique par CRISPR/Cas9 dans une lignée cellulaire de myoblastes humains immortalisés permettra l’évaluation des impacts morpho-fonctionnels; conférant un supplément d’informations relatives aux fonctions musculaires normales et pathologiques de MLIP, faiblement caractérisées jusqu’à présent. / Hereditary myopathies represent a large group of progressive neuromuscular disorders affecting the general, structural and functional integrity of skeletal muscle. They cause a myriad of symptoms, impairing quality of life and autonomy, and can even be fatal. Making an accurate diagnosis can be difficult, hampered in particular by the low prevalence of certain myopathies, the significant clinical heterogeneity that exists, and the symptomatic overlap of the various forms. Despite recent advances in sequencing techniques that greatly assist in screening, at least 25% of individuals with myopathies remain without a genetic diagnosis. Following the clinical investigation of a patient (Z46) with a late-onset distal myopathy, RNA-sequencing (RNA-seq) analysis revealed a homozygous nonsense variant of unknown significance (VUS) at the end of exon 5 of the MLIP gene. Altered gene expression levels of ‘’Muscular LMNA-Interacting Protein’’ (MLIP) and its partner ‘’A-type Lamin’’ (LMNA) prompted further investigation. More -omic alterations were identified by RT-PCR, qPCR and WB technics, reinforcing the pathogenic effect of the variant. Consolidating all results, Long-Read Sequencing (LRS) revealed a compensatory alternative splicing mechanism of MLIP, which tends to bypass and minimize the production of transcripts carrying the mutated exon 5. The present study aims to: 1) provide a formal genetic diagnosis for patient Z46, positing the MLIP variant as causative of the distal myopathy; 2) demonstrate the diagnostic power of RNA-seq in resolving this complex case through identification and elucidation of the VUS; 3) testify to the breadth of transcriptomic characterization afforded by the long reads of LRS. Coupled with this, CRISPR/Cas9 modeling of the pathogenic variant in an immortalized human myoblast cell line will allow assessment of morpho-functional impacts; conferring additional information related to the normal and pathological muscles functions of MLIP, poorly characterized thus far.

Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'influence du champ électrique et (2) la commutation résistive est un processus stochastique, donc régi par une probabilité. La région active est représentée par un réseau de connexions verticales, chacune composée de trois éléments électriques : deux d'entre eux sont de faible résistance tandis que le troisième agit comme un disjoncteur et peut être soit de résistance faible (LR) ou élevée (HR). Dans ce modèle, le changement d'état du disjoncteur est régi par une probabilité de commutation (P$_{s}$) qui est comparée à un nombre aléatoire « p ». P$_{s}$ dépend de la chute de tension le long du disjoncteur et de la tension de seuil, V$_{set}$ ou V$_{reset}$, pour définir les processus de « set » (HR à LR) et « reset » (LR à HR). Deux mécanismes de conduction ont été envisagés : ohmique pour un état LR et pour un état de résistance élevée l'effet tunnel facilité par un piège (TAT). Le modèle a été implémenté avec le langage de programmation Python et fonctionne avec une bibliothèque C externe qui optimise les calculs et le temps de traitement. Les résultats de la simulation ont été validés avec succès en les comparant avec des courbes courant-tension (IV) mesurées sur dispositifs ReRAM réels dont l'oxyde était fait de HfO$_{2}$ et pour neuf aires différentes. La flexibilité et la facilité de mise en œuvre de ce modèle de commutation résistive en font un outil puissant pour l'étude des ReRAM / A model for the switching of resistive random-access memories (ReRAM) is presented. This model is based on two hypotheses: (1) the resistive switching is caused by changes that occur in the narrow zone (active region) of the conductive filament under the influence of the electric field and (2) the resistive switching is a stochastic process governed by a switching probability. The active region is represented by a net of vertical connections, each one composed of three electrical elements: two of them are always low resistive (LR) while the third one acts as a breaker and can be low or high resistive (HR). In the model, the change of the breaker's state is governed by a switching probability (P$_{s}$) that is compared with a random number $p$. P$_{s}$ depend on the voltage drop along the breaker and the threshold voltage, V$_{set}$ or V$_{reset}$ for set (HR to LR) or reset (LR to HR) processes. Two conduction mechanism has been proposed: ohmic for the low resistive state and trap-assisted tunneling (TAT) for the high resistive state. The model has been implemented in Python and works with an external C-library that optimizes calculations and processing time. The simulation results have been successfully validated by comparing measured and modeled IV curves of HfO$_{2}$-based ReRAM devices of nine different areas. It is important to note that the flexibility and easy implementation of this resistive switching model allow it to be a powerful tool for the design and study of ReRAM memories

Submitted by Celso Magalhaes (celsomagalhaes@ufrrj.br) on 2017-06-20T15:28:09Z No. of bitstreams: 1 2016 - Pablo Vieira dos Santos.pdf: 2713237 bytes, checksum: 034b9528933152d64f409aa5701ceba6 (MD5) / Made available in DSpace on 2017-06-20T15:28:09Z (GMT). No. of bitstreams: 1 2016 - Pablo Vieira dos Santos.pdf: 2713237 bytes, checksum: 034b9528933152d64f409aa5701ceba6 (MD5) Previous issue date: 2016-02-26 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior - CAPES / Forest restoration is an important mechanism which can recover anthropized environments. In this context, the use of native species in order to wood production has become a very positive alternative in the economic viability of this activity, so that, know information about native species with potential for production of high quality wood, used in forest restoration, is an important task. Concerning this, the objective of this study was to evaluate the quality of the wood Cariniana legalis (Mart.) Kuntze from forest restoration plantings, through non-destructive methods. Were selected 20 individuals in the field through a silvicultural assessment and then were determined dendrometric characteristics: diameter at breast height (DBH), total height, tree standing volume and bark thickness. Four different non-destructive methods of assessing wood quality based on the DBH (1.30 m from the base of the tree): extensometry, resistograph, impulse tomograph and x-ray densitometry (pulling out wood samples by Pressler probe). The longitudinal residual strain (LRS) average of wood was 0.054 mm, a value lower than that found in the literature for many species, as for the Eucalyptus genus. The amplitudes generated by resistograph allowed the estimation the basic density values of wood Cariniana legalis, presenting a positive and significant correlation (r = 0.68) at 1% significance level. The average apparent density average, obtained by X-ray densitometry, was 0.528 g / cm3. In general, Cariniana legalis threes were homogeneous, with good sanity wood (without internal rot or hollow) and moderately dense density being easy workability and suitable for the furniture industry. / A restaura??o florestal ? um importante mecanismo, no qual se consegue recuperar ambientes antropizados. Neste contexto, o uso de esp?cies nativas visando a produ??o madeireira tem se tornado uma alternativa bastante positiva na viabiliza??o econ?mica desta atividade, de modo que, conhecer informa??es a respeito de esp?cies nativas com potencial na produ??o de madeira de alta qualidade, utilizadas na restaura??o florestal, ? uma tarefa de grande import?ncia. Nesse sentido, o objetivo deste trabalho foi avaliar a qualidade da madeira de Cariniana legalis (Mart.) Kuntze proveniente de plantios de restaura??o florestal, atrav?s de m?todos n?o destrutivos. Foram selecionados 20 indiv?duos no campo por meio de uma avalia??o silvicultural e em seguida determinou-se as caracter?sticas dendrom?tricas (di?metro ? altura do peito (DAP), altura total, volume da ?rvore em p? e a espessura da casca). Quatro diferentes m?todos n?o destrutivos de avalia??o da qualidade da madeira foram utilizados, sendo eles a extensometria, resistograf?a, tomografia de impulso e densitometria de raios X (retirando-se amostras do lenho por meio da sonda de Pressler), todos os ensaios tiveram como refer?ncia a altura do DAP (1,30m a partir da base da ?rvore). A deforma??o residual longitudinal (DRL) m?dia da madeira foi de 0,054 mm, valor este inferior ao encontrado na literatura para muitas esp?cies, como para o g?nero Eucalyptus. As amplitudes geradas pelo resist?grafo permitiram estimar os valores de densidade b?sica da madeira de Cariniana legalis, apresentando uma correla??o positiva e significativa (r = 0,68) ao n?vel de 1% de signific?ncia. A densidade aparente m?dia, obtida por meio da densitometria de raios X, foi de 0,528 g/cm3. De maneira geral os indiv?duos de Cariniana legalis se mostraram homog?neos, apresentando boa sanidade do lenho (sem ocos internos ou podrid?es) e densidade moderadamente densa, sendo de f?cil trabalhabilidade e indicada para a ind?stria moveleira

This thesis deals with indexing of spatio-temporal data. It describes existing approaches to indexing data and support for indexing in Oracle Database 11g. The aim of this work is to design structures of databases for storing spatio-temporal data over Oracle Database 11g to propose experiments for these databases. Ways of spatio-temporal data storage are evaluated according to these experiments in terms of time demands of queries and appropriateness of using available indexing structure and spatial operators.

Ein ausreichendes Lesetempo, eine hohe Lesegenauigkeit und ein entwickeltes Leseverständnis sind in fast allen Schulfächern Voraussetzung für eine erfolgreiche Teilnahme am Unterricht. Internationale Schulleistungsstudien belegen, dass ein hoher Anteil von Schülern bereits in der Grundschule unzureichende Lesekompetenzen aufweist und daher auf zusätzliche Förder- oder Therapiemaßnahmen angewiesen ist. Im Hinblick darauf wurden in einem Gruppen-Prä-Post-Follow-Up-Design mit zweifacher Prä-Messung zwei unterschiedliche Interventionen zur Verbesserung der Lesefähigkeiten bei Zweit- und Drittklässlern evaluiert: Ein modellgeleitetes Therapieverfahren zur Verbesserung der Lesegeschwindigkeit von Wörtern und ein von Eltern durchgeführtes Fördertraining zur Verbesserung der Lesegenauigkeit und Lesegeschwindigkeit von Pseudowörtern. Zur Teilnahme an den Interventionen wurden 58 Zweit- und Drittklässler mit einem gravierenden Leserückstand ausgewählt und entweder dem Therapieprogramm oder dem Fördertraining zugeteilt. Beide Gruppen erhielten über 5 Wochen ein tägliches 45-minütiges Training. Während das Training der Therapiegruppe von einem ausgebildeten Therapeuten durchgeführt wurde und in der Schule stattfand, wurde das Training der Fördergruppe von Eltern zu Hause durchgeführt. Es wurden Veränderungen in der Lesegeschwindigkeit, dem Leseverständnis und verschiedenen Blickbewegungsparametern ausgewertet. / In order to follow the lessons in school, children must be able to read with speed as well as with accuracy and a proven ability to comprehend texts. International school performance studies show that a high proportion of students already have inadequate reading skills in elementary school and therefore need additional support or therapy measures. Based on this observation, an evaluation of two different interventions among second- and third-graders is reported: A pre-post follow-up design with double pre-measurement, aiming at the increase of the students' reading skills. A model-guided therapy method for improving the reading speed of words and a parental training course for the improvement of reading accuracy and reading speed of pseudowords. 58 second- and third-graders with a serious reading backlog were selected to participate in the interventions and were assigned to either the therapy program or the parental training. Both groups received daily 45-minute training over a 5 week period. While the training of the therapy group was held by a therapist and took place at school, the training of the support group was carried out by parents at home. Changes in reading speed, reading comprehension and various eye movement parameters were evaluated.

Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter deposition. In this study, the effect of both deposition and post annealing conditions have been evaluated in regards to film structure, composition, surface contamination, and device performance. Both the variation of oxygen partial pressure during deposition and the temperature of the post-deposition annealing were found to have a significant impact on TFT properties. X-ray diffraction data indicated that the ZTO films remain amorphous even after annealing to 600° C. Rutherford backscattering spectrometry indicated that the Zn:Sn ratio of the films was ~1.7:1 which is slightly tin rich compared to the sputter target composition. X-ray photoelectron spectroscopy data indicated that the films had significant surface contamination and that the Zn:Sn ratios changed depending on sample annealing conditions. Electrical characterization of ZTO films using TFT test structures indicated that mobilities as high as 17 cm² V⁻¹ s⁻¹ could be obtained for depletion mode devices. It was determined that the electrical properties of ZTO films can be precisely controlled by varying the deposition conditions and annealing temperature. It was found that the ZTO electrical properties could be controlled where insulating, semiconducting and conducting films could be prepared. This precise control of electrical properties allowed us to incorporate sputter deposited ZTO films into resistive random access memory (RRAM) devices. RRAM are two terminal nonvolatile data memory devices that are very promising for the replacement of silicon-based Flash. These devices exhibited resistive switching between high-resistance states to low-resistance states and low-resistance states to high-resistance states depending on polarity of applied voltages and current compliance settings. The device switching was fundamentally related to the defect states and material properties of metal and insulator layers, and their interfaces in the metalinsulator-metal (MIM) structure. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from Jan. 6, 2012 - Jan. 6, 2013