<p>Semiconductor laser diode has been a popular research topic for longer than half a century and plays a crucial role in optical communication systems. The work in this thesis focuses on the development of the semiconductor laser diode with rapid-evolving nanotechnologies: by incorporating specific semiconductor or metal structures in the nanometer scale into the laser cavity, several key advantages are achieved.</p> <p>One category of the nano-materials is semiconductor quantum dots (QD). QD laser is a promising product by providing three-dimensional confinement to the injected electrons and holes. However, in order to realize the single-longitudinal-mode operation, which is critical to optical communications in purpose of reducing the dispersion and partition noise, the Fabry-Perot (FP) QD laser still needs further development to suppress the gain-broadening effects; otherwise the mode-selective structure must be adopted, such as the distributed feedback (DFB) cavity. In this thesis, the QD FP laser and QD DFB laser are both researched by advanced modelling techniques and the work is summarized as follows.</p> <p>1) For the QD FP laser, a comprehensive rate-equation model has been applied for simulation, with the emphasis on describing the interplay of inhomogeneous and homogeneous gain-broadening effects. According to the laser-behaviour simulations, it is found that for each given inhomogeneous broadening, the optimum homogeneous broadening can be obtained for the single longitudinal-mode selectivity. Based on the optimal gain-broadening parameters, the single-mode QD FP laser is designed and analysed. The quantitative conditions for the performance feasibility are examined with respect to the gain-broadening parameters.</p> <p>2) A one-dimensional (1D) standing wave model is developed for the QD DFB laser. This model can provide more information for the laser operation and better describe the dynamic behaviour compared with the rate-equation model. Based on it, the statistic operation and output spectrum of a typical QD DFB laser are simulated; and then the dynamic properties of the laser are analysed.</p> <p>The other category is the metal nano-structure, including the metal nano-particle and the metal nano-strip Bragg grating. The related work is summarized as follows.</p> <p>1) The optical properties of a single metal nano-particle with different size, composition and shape are researched by Mie theory, with respect to the localized surface plasmon polariton (LSPP) effect. It shows that both the resonance wavelength and Q-factor can be tuned in a large scale by proper methods.</p> <p>2) A novel metal nano-strip distributed Bragg grating (DBR) laser is proposed and investigated theoretically. Firstly the metal nano-strip Bragg grating is simulated by the couple-mode theory and the mode-matching method. It shows that the coupling constant and reflection spectrum can be tuned to meet different requirements when varying the grating parameters. Then for the designed metal-grating DBR laser, the rate-equation simulation results show that it works under the single-mode operation for a broad range of the design parameters.<br /> <strong></strong></p> / Doctor of Philosophy (PhD)

Dynamische Effekte in Halbleiterlasern aufgrund aktiver optischer Rückkopplung werden untersucht. Basierend auf Laserstrukturen mit verteilter Rückkopplung wird ein neuer Lasertyp entwickelt. Durch Experimente und ergänzende Simulationen wird ein umfassender Überblick der Dynamik dieses neuen Lasertyps gegeben. Zuerst werden die grundsätzlichen Veränderungen der Laserdynamik durch verzögerte optische Rückkopplung diskutiert. Es zeigen sich Hysterese- und Pulsationsphänomene. Ursprung der Pulsationen sind entdämpfte Relaxationsoszillationen und Modenschwebungen. Die Pulsationsphänomene werden anhand von integrierten Mehrsektionslasern mit passiver und aktiver optischer Rückkopplung untersucht. Es zeigt sich, daß nur Laser mit aktiver Rückkopplung die vollständige Kontrolle von Rückkoppelphase und -stärke erlauben, und damit den Zugang zum gesamten Spektrum der Laserdynamik mit sehr kurzer Verzögerungszeit bieten. Anhand des Lasertyps mit aktiver Rückkopplung wird eine umfassende Bifurkationsanalyse durchgeführt. Die Ergebnisse einer numerischen Untersuchung werden durch umfangreiche Experimente verifiziert. Sattel-Knoten-, Hopf- und Torus-Bifurkationen organisieren das Bauelementverhalten. Die Koexistenz von entdämpften Relaxationsoszillationen und Schwebungspulsationen erlaubt die Untersuchung von internen Synchronisationsphänomenen, Resonanzen und chaotischer Dynamik. Der Einfluß spontaner Emission auf die Laserdynamik zeigt sich am Beispiel rauschinduzierter Vorläufer einzelner Bifurkationen sowie am Übergang zwischen den beiden Pulsationsphänomenen. Abschließend wird die Anwendung des Lasers mit integriert-aktiver Rückkopplung als optischer Taktregenerator bei einer Datenrate von 40 Gbit/s demonstriert. Arbeitspunkte mit koexistierenden Oszillatoren und ganzzahligem Frequenzverhältnis eignen sich darüber hinaus zur rein optischen Frequenzteilung im GHz-Bereich. / Dynamical effects in semiconductor lasers due to active optical feedback are investigated. A novel laser type based on distributed feedback structures is developed and realized. Experiments as well as simulations give a comprehensive overview on the nonlinear dynamics of this laser type. First, the fundamental modifications of the solitary laser dynamics due to delayed optical feedback in the very short feedback cavity regime are discussed. Hysteresis effects and pulsation phenomena due to undamped relaxation oscillations and mode beating are identified. These oscillation types are experimentally confirmed by multi-section lasers with integrated passive and active feedback. It turns out that only the active feedback laser (AFL) allows for the full control of feedback phase and strength, enabling the access to the whole spectrum of laser dynamics in the very short delay limit. A complete bifurcation analysis for the AFL is presented. Results obtained in a numerical path-following study are verified by extensive experiments. Saddle-node, Hopf and torus bifurcations are identified to organize the device behavior. The coexistence of undamped relaxation oscillations and mode beating in the strong feedback regime allows for the experimental investigation of resonances, mutual locking and chaotic behavior. The modification of the laser dynamics by spontaneous emission noise is shown with the example of noisy precursors and irregular dynamics at the transition between the two oscillation types. Finally, the applicability of the AFL for optical clock recovery is demonstrated at a data rate of 40 Gbit/s. Operation points with coexisting oscillations and rational frequencies are shown to be suited for all-optical frequency division in the GHz range.

No description available.

Les Structures Localisées (SL) se forment dans les milieux non-linéaires dissipatifs à large rapport d'aspect où une ou plusieurs solutions peuvent coexister dans l'espace des paramètres. Bien que la formation des SL est un phénomène général, leur mise en œuvre dans les lasers à semi-conducteur se montre très intéressante due au potentiel qu'offre les SL pour le traitement tout optique de l'information. En effet, l'idée de base est d'utiliser les SL comme des bits d'information en exploitant leur propriété d'addressabilité dans un milieu laser rapide et miniaturisé. Dans ce travail, je décrirai les résultats théoriques et expérimentaux obtenus dans les lasers à semi-conducteur à cavité vertical (VCSEL). Après une courte introduction sur les SL spatiales déjà observées dans la section transverse des VCSELs, j'expliquerai comment nous sommes parvenus à générer des SL temporelles à partir d'un régime de Mode-Locking passif obtenu quand le laser est couplé à une longue cavité externe fermée par un absorbant saturable rapide. Nous avons également observé l'émergence d'un autre type de SL, les SL temporelles vectorielles, dont le mécanisme de formation exploite le degré de liberté de polarisation de la lumière émise par le VCSEL alors que celui-ci est soumis à de la rétro-action optique sélective en polarisation (PSF) et de la réinjection de polarisation croisée (XPR). / Localized Structures (LS) appear in nonlinear dissipative media with large aspect-ratios where one or several solutions coexist in the parameters space. Although LS formation is a general phenomenon, their implementation in semiconductor lasers is of great interest due to the potential of LS for all-optical data processing. In fact, the basic idea consists in using LS as bits of information exploiting their property of addressability in a fast and small-sized medium. In this contribution, I will show the experimental and theoretical results obtained in Vertical Cavity Surface-Emitting Lasers (VCSELs). After a brief historical introduction on spatial LS emerging in the transverse profile of VCSELs, I will describe our method for the generation of temporal LS, that we observed in the frame of passive mode-locking when the VCSEL is coupled to a long external cavity closed by a fast saturable absorber, and vectorial LS, whose formation exploits the polarization degree of freedom of the VCSEL, which is submitted to the actions of a polarization-selective feedback (PSF) and a crossed-polarization reinjection (XPR).

This thesis deals with the possibilities of energy transmission by optical fiber for the purpose of powering of electronic systems. It comprises issues of electrical energy conversion to optical energy, coupling the power into the optical fiber, coupling between fiber and opto-electric transducer, conversion of optical energy to electrical energy, and transformation on required voltage levels. The principles of such Power-Over-Fiber are discussed in the first part of the work. Various technologies for the implementation of key system parts and their effectivity are discussed. In the next part, several Power-Over-Fiber commercial devices are compared. Subsequently, systems for Power-Over-Fiber experimental implementations are proposed. They are based on the utilization of semiconductor laser, multimode fiber, photovoltaic cell and related electronic circuits. The final part of the thesis deals with the construction of experimental systems and measurement of parameters of transmitted power and efficiency.

Les sources laser accordables se distinguent par leur capacité à changer leur longueur d’onde d’émission de façon continue dans le temps. Elles sont utilisées dans de nombreuses applications comme les télécommunications, la spectroscopie et la tomographie optique cohérente. Elles sont caractérisées principalement par une faible largeur de raie instantanée, une grande fréquence de balayage et une large plage d’accord. Les avantages des sources accordables ouvrent la voie vers d’autres types d’applications comme la caractérisation des impulsions ultra-courtes par exemple. Généralement, ces impulsions sont caractérisées via des méthodes non linéaires, lentes et trop compliquées à mettre en place. Nous avons donc proposé une nouvelle approche basée sur les sources accordables pour la caractérisation des impulsions ultra-courtes. En utilisant un laser à semi-conducteur accordable linéairement, type SG-DBR (Sampled-Grating Distributed Bragg Reflector), nous pouvons balayer en une seule mesure tout le spectre optique des impulsions sous test. Le signal de battement entre la source accordable et le laser pulsé permet de mesurer l’amplitude et la phase spectrales des différents modes ce qui nous donne accès à la forme temporelle de l’impulsion. L’avantage de notre approche est que tout le processus de caractérisation se fait en une seule mesure très rapide. En effet, la grande fréquence de balayage du laser accordable permet d’avoir des temps de mesure très faibles (< 10 μs), ce qui offre la possibilité d’avoir des mesures en temps réel. De plus, grâce à la large plage d’accord, cette technique est complétement indépendante de l’impulsion sous test, elle ne nécessite aucune connaissance au préalable des différentes propriétés de cette dernière telles que la fréquence de répétition, le nombre de modes ou la fréquence de chaque mode / Optical swept sources are distinguished by the ability to change their output wavelength in a continuous manner over time. They are used in many applications such as telecommunications, spectroscopy and optical coherence tomography. They are mainly characterized by a narrow instantaneous linewidth, a high sweep rate and a wide tuning range. The advantages of swept sources open the way to other types of applications such as the characterization of ultrashort pulses for example. Generally, these pulses are characterized using nonlinear methods which are slow and too complicated. We have proposed a novel approach based on swept sources for the characterization of ultrashort pulses. By using a linearly wavelength-swept semiconductor laser like SG-DBR (Sampled-Grating Distributed Bragg Reflector), we can scan the entire optical spectrum of the pulses under test in a single measurement. The beat signal between the swept source and the pulsed laser is then used to measure the spectral amplitude and phase of all modes which gives access to the temporal shape of the pulse. The main advantage of our approach is that the entire characterization process is done in a single fast measurement. Indeed, the high sweep rate of the swept source offers the possibility of having real time measurements. In addition, thanks to the wide tuning range, this technique is completely independent of the pulse under test, it requires no prior knowledge of the various properties of the pulse such as the repetition frequency, the number of modes or the frequency of each mode

Les progrès récents des nanotechnologies permettent d'envisager de nouvelles générations de diodes laser. L'objectif de cette thèse est d'étudier l'apport des cristaux photoniques bidimensionnels pour explorer la faisabilité d'un réseau monolithique de diodes laser tout cristal photonique émettant au voisinage de 2,3 µm en filière GaSb. Chaque laser doit répondre à un certain nombre de critères : une émission monomode à une longueur d'onde stable et précise, une émission fine spectralement avec une puissance de sortie élevée, une longueur d'onde accordable, présentant aucun saut de mode sur la gamme d'accordabilité, un fonctionnement à température ambiante, sous pompage électrique et en régime continu. Ces critères répondent au cahier des charges de la technique de spectroscopie d'absorption à diodes laser accordables multiplexées (MTDLAS : Multiplexed Tunable Diode Laser Absorption Spectroscopy). La technique de MTDLAS est ici mise en œuvre pour les applications de détection de gaz dans le moyen infra-rouge (MIR), soit la gamme de longueur d'onde allant de 2 à 5 µm. Cette gamme de longueur d'onde présente plusieurs fenêtres de transparence (autour de 2,3 µm et de 3,4 à 4 µm) où l'absorption par la vapeur d'eau et le dioxyde de carbone est très faible. L'existence de ces fenêtres est mise à profit pour la détection de molécules gazeuses de l'atmosphère, telles que le monoxyde de carbone ou le méthane. Pour mes travaux de thèse, la longueur d'onde d'émission laser retenue est de 2,3 µm. Cette longueur d'onde correspond à la fenêtre de transparence pour la détection notamment du CH4, du CO et du HF. Ainsi, ce mémoire présente la conception de diodes laser tout cristal photonique, et le développement d'un procédé de fabrication de ces diodes lasers, qui a mené à la réalisation d'une série de composants. Nous montrons qu'une déformation de la maille photonique, associée à une optimisation de la largeur du guide, permet d'obtenir un fonctionnement monomode stable. Se basant sur ce principe, plusieurs géométries de mailles de cristaux photoniques ont été étudiées. Puis, nous nous attachons à lever le verrou technologique de la gravure profonde à fort rapport d'aspect dans les alliages AlGaAsSb. Pour cela, nous présentons des études paramétriques de gravure, conduisant à la mise au point d'un procédé optimisé de gravure profonde. Des profondeurs de gravure de 3,4 µm pour des trous de 370 nm de diamètre, soit un rapport d'aspect de plus de 9, ont ainsi pu être atteintes. Cette étape critique de gravure a été insérée dans un procédé technologique de fabrication de diodes laser tout cristal photonique, que nous avons mis au point. Cela a mené à la réalisation d'une série de composants. / Recent advances in nanotechnology allow considering new generations of laser diodes. The purpose of this thesis is to study the contribution of two-dimensional photonic crystals to design and fabricate a monolithic array of laser diodes emitting near 2.3 µm in GaSb system. Each laser in the array has to respond to stringent criteria : a stable and precisely predefined single-mode emission wavelength, high output power, tunable wavelength with no mode hopping over the tunability range. Moreover, such device should operate at room temperature, under electrical pumping and continuous regime. These criteria respond to the specifications of the technique of Multiplexed Tunable Diode Laser Absorption Spectroscopy (MTDLAS). The MTDLAS technique is here implemented for gas sensing applications in the Mid-wavelength infrared (MidIR), corresponding to the wavelength range from 2 to 5 microns. This wavelength range contains two transparency windows (around 2.3 µm and from 3.4 to 4 µm), where the absorption by water vapor and carbon dioxide is reduced. The existence of these windows is harnessed for the detection of gaseous molecules in the atmosphere, such as carbon monoxide or methane. For my thesis work, the chosen wavelength of laser emission is 2.3 µm. This wavelength corresponds to a transparency window allowing detection of CH4, CO and HF. This dissertation presents the design of all photonic crystal laser diode, and the development of a manufacturing process of such device, which led to the production of a set of components. We show that the engineering of the photonic lattice combined with an optimization of the width of the laser waveguide provide stable, single-mode emission operation. Based on this principle, several geometries for photonic crystal lattice were studied. Then we tackle the technological challenge of deep etching with high aspect ratio in AlGaAsSb alloys. For this, we present parametric studies of etching, leading to the development of an optimized process for deep etching. We succeed to etch holes of 370 nm diameter and 3.4 µm depths, corresponding at an aspect ratio in excess of 9. We have developed a technological manufacturing process of all photonic crystal laser diodes, where this critical etching step has been successful inserted. This led to the realization of a set of components.

The objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the concept of X-CPA are addressed. Based on theoretical and experimental study, an all-semiconductor mode-locked X-CPA system consisting of a mode-locked master oscillator, an optical pulse pre-stretcher, a semiconductor optical amplifier (SOA) pulse picker, an extreme pulse stretcher/compressor, cascaded optical amplifiers, and a bulk grating compressor is successfully demonstrated and generates >kW record peak power. A potential candidate for generating high average power from an X-CPA system, novel grating coupled surface emitting semiconductor laser (GCSEL) devices, are studied experimentally. The first demonstration of mode-locking with GCSELs and associated amplification characteristics of grating coupled surface emitting SOAs will be presented. In an effort to go beyond the record setting results of the X-CPA system, a passive optical cavity amplification technique in conjunction with the X-CPA system is constructed, and studied experimentally and theoretically.

Insight Photonic Solutions Inc. has continued to develop their patented VT-DBR laser design; these wavelength tunable lasers promise marked image-quality and acquisition time improvements in SS-OCT applications. To be well suited for SS-OCT, tunable lasers must be capable of producing a highly linear wavelength sweep across a tuning range well-matched to the medium being imaged; many different tunable lasers used in SS-OCT are compared to identify the optimal solution. This work electrically and spectrally characterizes two completely new all-semiconductor VT-DBR designs to compare, as well. The Neptune VT-DBR, an O-band laser, operates around the 1310 nm range and is a robust solution for many OCT applications. The VTL-2 is the first 1060 nm VT-DBR laser to be demonstrated. It offers improved penetration through water over earlier designs which operate at longer wavelengths (e.g. - 1550 nm and 1310 nm), making it an optimal solution for the relatively deep imaging requirements of the human eye; the non-invasive nature of OCT makes it the ideal imaging technology for ophthalmology. Each laser has five semiconductor P-N junction segments that collectively enable precise akinetic wavelength-tuning (i.e. - the tuning mechanism has no moving parts). In an SS-OCT system utilizing one of these laser packages, the segments are synchronously driven with high speed current signals that achieve the desired wavelength, power, and sweep pattern of the optical output. To validate the laser’s fast tuning response time necessary for its use in SS-OCT, a circuit model of each tuning section is created; each laser section is modeled as a diode with a significant lead inductance. The dynamic resistance, effective capacitance, and lead inductance of this model are measured as a function of bias current and the response time corresponding to each bias condition is determined. Tuning maps, spectral linewidths, and side-mode suppression ratio (SMSR) measurements important to SS-OCT performance are also collected. Measured response times vary from 700 ps to 2 ns for the Neptune and 1.2 to 2.3 ns for the VTL-2. Linewidth measurements range from 9 MHz to 124 MHz for the Neptune and 300 kHz to 2 MHz for the VTL-2. SMSR measurements greater than 38 dB and 40 dB were observed for the Neptune and VTL-2, respectively. Collectively, these results implicate the VT-DBR lasers as ideal tunable sources for use in SS-OCT applications.

As the light source, semiconductor laser diodes play an important role in the fiber-optic communication systems. The main function of a laser diode is to convert signals from the electrical domain to the optical carriers so that they can be transmitted through an optical fiber. Modeling and simulation of directly modulated laser diodes are necessary for understanding and prediction of their performance in fiber-optical communication links. The alternatives based on a comprehensive experimental evaluation are normally costly and time consuming. This is particularly true for systems running at high bit-rate such as the 10Gb/s transmission systems that are used in tele and data communication applications. This thesis presents a modeling and simulation study for directly modulated laser diodes for high-speed fiber-optical communication systems. The work is based on the conventional rate equation model used as the governing equation for the simulation of the behavior of semiconductor lasers. In modeling of the system performance, each device is treated as a symbolic node that takes input signal and generates output signal all in time domain. For the semiconductor lasers, the original signals in electrical domain are taken as the input while the modulated lights in optical domain are as the output. The rate equations then link the output to the input. For any given time domain signal input, the modulated light (power and wavelength) as the output is calculated through the solutions of the rate equations. In seeking for the solution to the rate equations, we utilized a numerical approach to solve the rate equations which are a system of coupled nonlinear ordinary differential equations where analytical solution does not generally exist. In this work, a comprehensive study on the behavior of semiconductor lasers has been performed through static and dynamic analyses of the rate equations. The noise characteristic is also examined as it may become a major concern in some applications for the noise of the directly modulated laser transmitter may cause degradation to the signals and therefore lead to system penalty. Further, the numerical models and simulators developed for semiconductor lasers are incorporated into a general simulation platform on which similar models and simulators for other optoelectronic and optical components are connected to form a system-level simulator for point-to-point multiple channel fiber-optical communication links. This platform is capable of handling different system configurations with different component selection options. It simulates the time domain waveform in any point along the signal transmission path following a strict data-flow approach; i.e., the simulation is performed sample-by-sample on “real time” rather than frame-by-frame at “flush” mode. Finally, the simulation results, both on the device level and on the system level, have been compared with the experimental data and the results from other models in literature and found qualitative agreement. / Thesis / Master of Applied Science (MASc)