Graphene nanostructures directly grown on SiC are appealing for their potential application to nano-scale electronic devices. In particular, epitaxial sidewall graphene nanoribbons have been a promising candidate in ballistic transport and band gap engineering. In this thesis, we study graphene nanoribbons by utilizing both nano-lithography and natural step bunching to control the step morphology of the SiC(0001) surface in order to guide the growth of graphene which initiates at step edges, and study their respective characteristics. With scanning tunneling microscopy and spectroscopy (STM/STS), we explore the local atomic and electronic structures of the graphene nanoribbons down to atomic scale. It is found that nanoribbon formation depends critically on nanofacet orientation, nanofacet density, and growth conditions. Under some conditions, nanoribbons grow predominantly on the nanofacet. Significant electronic density-of-states features, resolved by STS, are found to depend strongly on proximity to strained graphene near the step edge. Experimental results are compared to Molecular Dynamics simulations to better understand the origin of the discrete electronic states.

No description available.

The in-plane phenomena of interaction between the tyre structural response and contact force generation are investigated in this work. The challenges of the physical tyre simulation are identified, primarily associated with the computational load imposed by the need to capture the space distributed mechanisms that prescribe the above interaction. The method of modal expansion and reduction is proposed for the moderation of this load. The theoretical framework for the transformation of a tyre modal representation into a transient contact and shear force generation model is developed. Various modelling approaches are examined with regards to their modal prediction characteristics. Linear and non linear structural features as well as the physical properties that define the broad range modal behaviour are identified. A discretised form of the ring model is derived and combined with a foundation of viscoelastic tread elements for simulating the transient contact behaviour of the tyre. The resulting pattern of the modes' excitation justifies the validity of the modal reduction method and reveals the relative importance of various mechanisms and physical properties in tyre contact behaviour. The interaction between the friction controlled shear slip of the tread, the belt compliance and the sidewall buckling is found to be reflected on the two-dimensional contact pressure distribution patterns. A method able to simulate the dynamic transient rolling and slipping operating conditions is developed, although the small displacement assumption of the modal approach is dropped. The method, which is based on the combined modal-time and space-time domain solutions, is applied on the study of the physical mechanism of the launch process. The examination of the model under steady state kinematic conditions reveals the saturation of the traction force for profound levels of slip, which highlights the contribution of the structural mechanisms on the macroscopically observed shear force performance of the tyre. The variation of the modes' level of excitation, as induced by the operating conditions, is proposed for the capture of the physical properties effect on tyre behaviour and performance.

Micro-Electro-Mechanical Systems (MEMS) micromirrors have been developed for more than two decades along with the development of MEMS technology. They have been used into many application fields: optical switches, digital light projector (DLP), adoptive optics (AO), high definition (HD) display, barcode reader, endoscopic optical coherence tomography (OCT) and confocal microscope, and so on. Especially, MEMS mirrors applied into endoscopic OCT and confocal microscope are the intensive research field. Various actuation mechanisms, such as electrostatic, electromagnetic, electro bimorph thermal, electrowetting, piezoelectric (PZT) and hybrid actuators, are adopted by different types of micromirrors. Among these actuators, the electrostatic is easily understood and simple to realize, therefore, it is broadly adopted by a large number of micromirrors. This thesis reports the design, fabrication, and characterization of a 2-D Silicon-on-insulation (SOI) MEMS micromirror with sidewall (SW) electrodes for endoscopic OCT or confocal microscope imaging. The biaxial MEMS mirror with SW electrodes is actuated by electrostatic actuators. The dimension of mirror plate is 1000micron×1000micron, with a thickness of a 35micron. The analytical modeling of SW electrodes, fabrication process, and performance characteristics are described. In comparison to traditional electrostatic actuators, parallel-plate and comb-drive, SW electrodes combined with bottom electrodes achieve a large tilt angle under a low drive voltage that the comb-drive does and possess fairly simple fabrication process same as that of the parallel-plate. A new fabrication process based on SOI wafer, hybrid bulk/surface micromachined technology, and a high-aspect-ratio shadow mask is presented. Moreover, the fabrication process is successfully extended to fabricate 2×2 and 4×4 micromirror arrays. Finally, a biaxial MEMS mirror with SW electrodes was used into Confocal MACROscope for imaging. Studied optical requirements in terms of two optical configurations and frequency optimization of the micromirror, the biaxial MEMS mirror replaces the galvo-scanner and improves the MACROscope. Meanwhile, a new Micromirror-based Laser Scanning Microscope system is presented and allows 2D images to be acquired and displayed.

Micro-Electro-Mechanical Systems (MEMS) micromirrors have been developed for more than two decades along with the development of MEMS technology. They have been used into many application fields: optical switches, digital light projector (DLP), adoptive optics (AO), high definition (HD) display, barcode reader, endoscopic optical coherence tomography (OCT) and confocal microscope, and so on. Especially, MEMS mirrors applied into endoscopic OCT and confocal microscope are the intensive research field. Various actuation mechanisms, such as electrostatic, electromagnetic, electro bimorph thermal, electrowetting, piezoelectric (PZT) and hybrid actuators, are adopted by different types of micromirrors. Among these actuators, the electrostatic is easily understood and simple to realize, therefore, it is broadly adopted by a large number of micromirrors. This thesis reports the design, fabrication, and characterization of a 2-D Silicon-on-insulation (SOI) MEMS micromirror with sidewall (SW) electrodes for endoscopic OCT or confocal microscope imaging. The biaxial MEMS mirror with SW electrodes is actuated by electrostatic actuators. The dimension of mirror plate is 1000micron×1000micron, with a thickness of a 35micron. The analytical modeling of SW electrodes, fabrication process, and performance characteristics are described. In comparison to traditional electrostatic actuators, parallel-plate and comb-drive, SW electrodes combined with bottom electrodes achieve a large tilt angle under a low drive voltage that the comb-drive does and possess fairly simple fabrication process same as that of the parallel-plate. A new fabrication process based on SOI wafer, hybrid bulk/surface micromachined technology, and a high-aspect-ratio shadow mask is presented. Moreover, the fabrication process is successfully extended to fabricate 2×2 and 4×4 micromirror arrays. Finally, a biaxial MEMS mirror with SW electrodes was used into Confocal MACROscope for imaging. Studied optical requirements in terms of two optical configurations and frequency optimization of the micromirror, the biaxial MEMS mirror replaces the galvo-scanner and improves the MACROscope. Meanwhile, a new Micromirror-based Laser Scanning Microscope system is presented and allows 2D images to be acquired and displayed.

<p> This thesis consists of two projects: alignment of copper phthalocyanine compounds on Au(111) and sidewall functionalization of single-walled carbon nanotubes on graphite. Both of these projects are performed with scanning tunneling microscopy (STM), which is used to study the structure of modified surfaces that are of interest in molecular electronics.</p> <p> In the first project, copper phthalocyanine compounds are made into a thin film with different methods, such as solution deposition, self-assembly and Langmuir-Blodgett film deposition. Those films are important materials in photoelectric devices such as organic light emitting diodes (OLED's). Molecules in these films are aligned on the solid surface with face-on orientation or edge-on orientation. However, the films of molecules with face-on orientation are preferentially used in LED's. In this project, we focus on finding a method to force molecules with face-on orientation in the film. The structure of copper octakisalkylthiophthalocyanine films on Au(111) was investigated with STM under ambient conditions. Columns of molecules are commonly observed due to the π-π interaction between molecules. The presence and length of alkyl chains in the molecules affects the alignment of molecules on the gold surface. The weak interaction between molecules and substrate caused the structure to be easily modified by an STM tip.</p> <p> In addition, chemical sidewall functionalization of SWCNTs was also explored with STM under ambient conditions. It was found that the spatial distribution of functional groups on nanotube sidewall is not random. Understanding the rules behind the distribution of functional groups will allow scientists to better control carbon nanotube functionalization and improve the properties of nanotubes. High resolution STM images provide direct evidence of the distribution and the effects of functional groups on nanotubes. Possible mechanisms are proposed to elucidate the process of SWCNT functionalization by free radicals and via the Bingel reaction.</p> / Thesis / Master of Science (MSc)

Aujourd'hui, les outils de lithographie utilisés dans l'industrie arrivent à leur limite de résolution en simple exposition. Pour continuer à diminuer les dimensions, il faut utiliser des techniques de double exposition, mais cela entraîne une explosion des coûts de fabrication. Cette thèse se focalise sur les aspects de modélisation de deux techniques, Sidewall Image Transfer et Directed Self-Assembly, qui sont pressenties pour permettre à l'industrie de continuer la réduction des dimensions des transistors, tout en minimisant les coûts. / Today, the lithographic tools used in industry came to their resolution limit in single patterning. In order to continue the reduction of dimensions, it is necessary to use double patterning, but this increase drastically the cost of manufacturing. This thesis focus on the modelisation aspects of two techniques, Sidewal Image Transfer and Directed Self-Assembly, that can help the industry continuing making transistors even smaller, while keeping the costs manageable.

With 400 Gbps Ethernet being developed at the time of writing this thesis, all-optical networks are a solution to the increased bandwidth requirements of data communication allowing architectures to become increasingly integrated. High density integration of optical components leads to potential ‘Optical/Photonic’ electromagnetic compatibility (EMC) and signal integrity (SI) issues due to the close proximity of optical components and waveguides. Optical EMC issues are due to backscatter, crosstalk, stray light, and substrate modes. This thesis has focused on the crosstalk in Optical Add/Drop Multiplexers (OADMs) as an EMC problem. The main research question is: “How can signal integrity be improved and crosstalk effects mitigated in small-sized OADMs in order to enhance the optical EMC in all-optical networks and contribute to the increase in integration scalability?” To answer this question, increasing the crosstalk suppression bandwidth rather than maximizing the crosstalk suppression ratio is proposed in ring resonator based OADMs. Ring resonators have a small ‘real estate’ requirement and are, therefore, potentially useful for large scale integrated optical systems. A number of approaches such as over-coupled rings, vertically-coupled rings and rings with random and periodic roughness are adopted to effectively reduce the crosstalk between 10 Gbps modulated channels in OADMs. An electromagnetic simulation-driven optimization technique is proposed and used to optimize filter performance of vertically coupled single ring OADMs. A novel approach to analyse and exploit semi-periodic sidewall roughness in silicon waveguides is proposed. Grating-assisted ring resonator design is presented and optimized to increase the crosstalk suppression bandwidth.

<p>The fabrication of zone plate lenses that are used for focusing X-rays relies on nanofabrication techniques such as e-beam lithography, reactive ion etching, and electroplating. The circular grating-like zone plate pattern can have a smallest half-period, a so-called zone width, of down to 20 nm while it also needs to have a height that is 5 to 10 times the zone width to have good diffraction efficiency. This high aspect ratio structuring is a very challenging field of nanofabrication.</p><p>This diploma project has focused on improving the process step of fabricating the electroplating mold by cryo-cooling the polymer during the reactive ion etching with O₂. The low temperature causes passivation of the sidewalls of the mold during etching which results in a more ideal rectangular profile of the high aspect ratio plating mold.</p><p>By etching at -100 °C, structures with highly vertical sidewalls and no undercut were realized. The experiments showed that there is a tradeoff between the anisotropy of the zone profile and the formation rate of polymer residue, so-called RIE grass. Through a proper choice of process parameters the grass could be completely removed without introducing any undercut.</p> / QC 20100414

The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. Furthermore, Schottky barrier source/drain technology presents a promising solution to reducing the parasitic source/drain resistance in the FinFET. The ultimate goal of this thesis is to integrate Schottky barrier source/drain in FinFETs, with an emphasis on process development and integration towards competitive devices. First, a robust sidewall transfer lithography (STL) technology is developed for mass fabrication of Si-nanowires in a controllable manner. A scalable self-aligned silicide (SALICIDE) process for Pt-silicides is also developed. Directly accessible and uniform NWs of Ni- and Pt-silicides are routinely fabricated by combining STL and SALICIDE. The silicide NWs are characterized by resistivity values comparable to those of their thin–film counterparts. Second, a systematic experimental study is performed for dopant segregation (DS) at the PtSi/Si and NiSi/Si interfaces in order to modulate the effective SBHs needed for competitive FinFETs. Two complementary schemes SIDS (silicidation induced dopant segregation) and SADS (silicide as diffusion source) are compared, and both yield substantial SBH modifications for both polarities of Schottky diodes (i.e. φbn and φbp). Third, Schottky barrier source/drain MOSFETs are fabricated in UTB-SOI. With PtSi that is usually used as the Schottky barrier source/drain for p-channel SB-MOSFETs, DS with appropriate dopants leads to excellent performance for both types of SBMOSFETs. However, a large variation in position of the PtSi/Si interface with reference to the gate edge (i.e., underlap) along the gate width is evidenced by TEM. Finally, integration of PtSi NWs in FinFETs is carried out by combining the STL technology, the Pt-SALICIDE process and the DS technology, all developed during the course of this thesis work. The performance of the p-channel FinFETs is improved by DS with B, confirming the SB-FinFET concept despite device performance fluctuations mostly likely due to the presence of the PtSi-to-gate underlap. / QC 20100923