Les récentes découvertes sur les phénomènes hyperfréquences et nonlinéaires dans les structures minces ferromagnétiques actives planaires ont fait émerger un grand nombre de nouvelles études et applications pratiques prometteuses. La conversion de l'énergie magnétoélastique peut être beaucoup plus efficace à proximité de la transition de réorientation de spin (TRS). Les structures minces ferromagnétiques actives planaires fournissent un grand nombre de caractéristiques haute fréquence uniques : par exemple, les conditions pour l’effet Doppler anomal peuvent être satisfaites. Les cristaux magnoniques représentent également un domaine prometteur pour les futures investigations.Dans le présent travail nous avons établi la description théorique de la propagation des ondes hyperfréquences et non-linéaires dans les structures minces ferromagnétiques actives planaires de compositions différentes. Il a été démontré expérimentalement et théoriquement que les vibrations basse fréquence d’un cantilever peuvent être amplifiées quand la résonance ferromagnétique est excitée par un champ électromagnétique HF à proximité de la TRS. En outre, l'effet de la démodulation magnétoélastique peut être complété par un effet magnétoélectrique nonlinéaire. La possibilité de l'apparition de l'effet Doppler anomal lors de la propagation d'une onde de surface magnétostatique dans une structure ferrite-diélectrique-métal, dans une certaine plage de paramètres du système, est démontrée. La dispersion d'une onde magnétostatique de surface se propageant dans un film dont l'épaisseur varie linéairement, et possédant une structure périodique sous la forme de bandes parallèles gravées, a été calculée / Recently discovered investigations on the high frequency and nonlinear phenomena in thin active ferromagnetic planar structures showed a great number of new studies and promising practical applications. The magnetoelastic energy conversion can be much more efficient in the vicinity of spin reorientation transition (SRT). The thin active ferromagnetic planar structures provide a lot of unique high frequency features: for instance, the anomalous Doppler effect conditions can be satisfied. The magnon crystals are also an actual area for the further investigation of the domain.In the present work we derived the theoretical description for the high frequency and non-linear waves propagation in thin planar ferromagnetic structures with different compositions. It was demonstrated experimentally and theoretically that LF vibrations of the cantilever can be amplified when FMR is excited by HF electromagnetic field near SRT. Moreover the magnetoelastic demodulation effect can be supplemented with nonlinear magnetoelectric effect. The possibility of the occurrence of the anomalous Doppler effect during propagation of an MSSW in an FDM structure in a certain range of system parameters is substantiated. The dispersion of a surface magnetostatic wave propagating in a film, whose thickness varies linearly, with a periodic structure in the form of parallel etched strips was calculated. As it was clearly demonstrated these works are of great interest for the new studies and practical applications

MnSi(111) films were grown on Si(111) substrates by solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) to determine their magnetic structures. A lattice mismatch of -3.1% causes an in-plane tensile strain in the film, which is partially relaxed by misfit dislocations. A correlation between the thickness dependence of the Curie temperature (TC) and strain is hypothesized to be due to the presence of interstitial defects. The in-plane tensile strain leads to an increase in the unit cell volume that results in an increased TC as large as TC = 45 K compared to TC = 29.5 K for bulk MnSi crystals. The epitaxially induced tensile stress in the MnSi thin films creates an easy-plane uniaxial anisotropy. The magnetoelastic coefficient was obtained from superconducting quantum interference device (SQUID) magnetometry measurements combined with transmission electron microscopy (TEM) and x-ray diffraction (XRD) data. The experimental value agrees with the coefficient determined from density functional calculations, which supports the conclusion that the uniaxial anisotropy originates from the magnetoelastic coupling. Interfacial roughness obscured the magnetic structure of the SPE films, which motivated the search for a better method of film growth. MBE grown films displayed much lower interfacial roughness that enabled a determination of the magnetic structure using SQUID and polarized neutron reflectometry (PNR). Out-of-plane magnetic field measurements on MBE grown MnSi(111) thin films on Si(111) substrates show the formation of a helical conical phase with a wavelength of 2?/Q = 13.9 ± 0.1 nm. The presence of both left-handed and right-handed magnetic chiralities is found to be due to the existence of inversion domains that result from the non-centrosymmetric crystal structure of MnSi. The magnetic frustration created at the domain boundaries explains an observed glassy behaviour in the magnetic response of the films. PNR and SQUID measurements of MnSi thin films performed in an in-plane magnetic field show a complex magnetic behaviour. Experimental results combined with theoretical results obtained from a Dzyaloshinskii model with an added easy-plane uniaxial anisotropy reveals the existence of numerous magnetic modulated states that do not exist in bulk MnSi. It is demonstrated in this thesis that modulated chiral magnetic states can be investigated with epitaxially grown MnSi(111) thin films on insulating Si substrates, which offers opportunities to investigate spin-dependent transport in chiral magnetic heterostructures based on this system.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Samples of Bi 2Fe4O9 mullite and ReFe 0.5M0.5O3 (Re = Nd, Sm, Eu, Gd, Dy; M = Mn, Al) complex perovskites were successfully synthesized by using the combustion synthesis method. While the mullite was obtained after thermal treatment at temperatures below 1000ºC, complex perovskites are produced after thermal treatments between 1250ºC and 1500ºC for at most 24 h. The X-ray diffraction data analysis suggests the formation of single phase orthorhombic structure, after suitable heat treatment. Scanning electron microscopy (SEM) revealed the formation of micrometric grain size, giving to the sample the relative density. EDS spectra confirmed the homogeneity and purity of complex perovskites. Magnetization measurements as a function of field and temperature showed the diversity of magnetic behavior of the samples. Among the behaviors we can highlight the reorientation of spin for ortoferritas ReFe0.5Mn0.5O3 (Re = Dy, Gd, Eu, Sm, Eu) and ReFe0.5Al0.5O3 (Re = Dy, Nd). Another interesting finding was the effect of magnetic reversal of the samples ReFe0.5Al0.5O3 (Re = Nd, Gd) and EuFe0.5Mn0.5O3. Raman spectra show anomalous bands of second order in the perovskite DyFe0.5Al0.5O3 with characteristics of resonant effects. The evolution of the band associated with the symmetric vibrational mode of the octahedron shows hardening at the temperature range of ordered magnetic phase, thus suggesting a possible spin-phonon coupling. Depolarization current measurements highlights a relaxation process due to charge carriers in the samples ReFe0.5Mn0.5O3 (Re = Dy, Gd). The application of magnetic field profoundly influences the depolarization current behavior of DyFe0.5Mn0.5O3. Dielectric permittivity measurements showed no anomalies between 10 K and 300 K, that could can be associated to a ferroelectric phase. / Amostras da mulita Bi2Fe4O9 e das perovskitas complexas ReFe0.5M0.5O3 (Re= Nd, Sm, Eu, Gd, Dy; M = Mn, Al) foram sintetizadas com sucesso utilizando o método de síntese por reação de combustão. Enquanto a mulita foi obtida após tratamento térmico com temperaturas abaixo de 1000ºC, as perovskitas complexas foram produzidas após tratamentos térmicos entre 1250ºC e 1500ºC por, no máximo, 24 h. A análise de dados de difração de raios X sugerem a formação de estruturas ortorrômbicas de fase única, após os tratamento térmico apropriado. Medidas de microscopia evidenciaram formação de grãos micrométricos conferindo às amostras relativa densidade. Os espectros EDS confirmaram a homogeneidade e pureza das perovskitas complexas. As medidas de magnetização em função do campo e da temperatura evidenciaram a diversidade de comportamentos magnéticos das amostras estudadas. Entre os comportamentos destacamos reorientação de spin para as ortoferritas ReFe0.5Mn0.5O3 (Re = Dy, Gd, Eu, Sm, Eu) e ReFe0.5Al0.5O3 (Re = Dy,Nd). Outro interessante achado foi o efeito de inversão magnética das amostras ReFe0.5Al0.5O3 (Re = Nd, Gd) e EuFe0.5Mn0.5O3. Espectros Raman demonstram bandas anômalas de segunda ordem na perovskita DyFe0.5Al0.5O3 com características de efeitos ressonantes. A evolução da banda associada ao modo vibracional simétrico do octaedro apresenta endurecimento em temperaturas na faixa da fase magnética ordenada, sugerindo assim, um possível acoplamento spin-f onon. Medidas de corrente de despolarização destaca um processo de relaxação devido aos portadores de cargas nas amostras ReFe0.5Mn0.5O3 (Re=Dy,Gd). A aplicação de campo magnético influencia profundamente o comportamento da corrente de despolarização do DyFe0.5Mn0.5O3. Medidas de permissividade dielétrica não exibiram anomalias entre 10 K e 300 K que possam a ser associadas a uma fase ferroelétrica.

In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann. / In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.