The motion of domain walls due to the spin torque generated by coherent carrier transport is of considerable interest for the development of spintronic devices. We model the charge and spin transport through domain walls in ferromagnetic semiconductors for various systems. With an appropriate model Hamiltonian for the spin– dependent potential, we calculate wavefunctions inside the domain walls which are then used to calculate transmission and reflection coefficients, which are then in turn used to calculate current and spin torque. Starting with a simple approximation for the change in magnetization inside the domain wall, and ending with a sophisticated transfer matrix method, we model the common π wall, the less–studied 2π wall, and a system of two π walls separated by a variable distance. We uncover an interesting width dependence on the transport properties of the domain wall. 2π walls in particular, have definitive maximums in resistance and spin torque for certain domain wall widths that can be seen as a function of the spin mistracking in the system — when the spins are either passing straight through the domain wall (narrow walls) or adiabatically following the magnetization (wide walls), the resistance is low as transmission is high. In the intermediate region, there is room for the spins to rotate their magnetization, but not necessarily all the way through a 360 degree rotation, leading to reflection and resistance. We also calculate that there are widths for which the total velocity of a 2π wall is greater than that of a same–sized π wall. In the double–wall system, we model how the system reacts to changes in the separation of the domain walls. When the domain walls are far apart, they act as a spin–selective resonant double barrier, with sharp resonance peaks in the transmission profile. Brought closer and closer together, the number and sharpness of the peaks decrease, the spectrum smooths out, and the domain walls brought together have a transmission spectrum with many of the similar features from the 2π wall. Looking at the individual walls, we find an interesting interaction that has three distinct regimes: 1) repulsion, where the left wall moves to the left and the right wall to the right; 2) motion together, where the two walls both move to the right, even at the same velocity for one special value of separation; and 3) attraction, where the left wall moves to the right and the right wall moves to the left. This speaks to a kind of natural equilibrium distance between the domain walls. This is of major interest for device purposes as it means that stacks of domain walls could be self–correcting in their motions along a track. Much experimental work needs to be done to make this a reality, however.

In this thesis, we have analyzed one-dimensional fermion-spin interactions in the dilute limit. The two cases we analyze represent different paradigms. For the first part, we look at the existence of spins for all sites as an effective model to describe the rearrangement of core electrons within the dynamic Hubbard model. Within this model, the behavior of electrons and holes will be compared in the presence of fermion-spin coupling and on-site repulsion. It will be shown that in this framework, electrons and holes behave differently and even though electrons experience increased repulsion, holes show attraction for a range of on-site repulsions. The characteristics of the interaction show effective nearest-neighbor attraction though no such term exists within the model. By the analysis of dynamic properties, two regions of interaction are identified. The gradual change from weak to strong coupling of fermions is presented. The effect of introducing on-site repulsion for both ranges of coupling is presented for both the dynamic Hubbard model and electron-hole symmetric version. For the second case involving fermion-spin interaction, we look at the interaction of a fermion with spins existing only for a small portion of the lattice, representing a coupled magnetic layer that an itinerant fermion interacts with through Heisenberg-like spin flip interaction. The interaction represents a spin-flip interaction of a spin current and magnetic layer. This interaction has been extensively studied for its relevance to computer hard drives both experimentally and theoretically. Most theoretical descriptions utilize the semi-classical Landau-Lifshitz-Gilbert (LLG) formalism. However, with recent improvements in experimental methods with very small magnetic layers and very fast real time measurements, quantum effects become more pronounced. We present quantum mechanical results that show considerable modification to spin-flip interaction. We identify a set of conditions that exhibits the existence of an emerging bound state for the spin current both numerically and analytically. The bound state is a quantum mechanical state and cannot be achieved with a classical picture. We present results in a one-dimensional lattice for a spin-1/2 system, and generalize our arguments to higher dimension and spins with S > 1/2.

Researches in spintronics, especially those remarkably classified in the current induced spin-transfer torque (STT) framework, circumvent challenges with different materials and geometries. Perpendicular magnetic anisotropy (PMA) materials are showing capability of holding promise to be employed in STT based spintronics elements, e.g. spin-torque oscillators (STOs), STT-magnetoresistive random access memories (STT-MRAMs) and current induced domain wall motion elements. This dissertation presents experimental investigations into developing sputter deposited Co/Ni multilayers (MLs) with PMA and employs these materials in nano-contact STOs (NC-STOs) based on giant magnetoresistance (GMR) effect and in pseudo-spin-valve (PSV) structures. The magnetostatic stray field coupling plays an important role in perpendicular PSVs. The temperature dependent coupling mechanism recommends that this coupling can be tailored, by i) the saturation magnetization and coercivity of the individual layers, ii) the coercivity difference in layers, and iii) the GMR spacer thickness, to get a well decoupled and distinguishable switching response. Moreover, this thesis focused on the implementation and detailed characterization of NC-STOs with strong PMA Co/Ni ML free layers and in-plane Co reference layers as orthogonal (Ortho) magnetic geometry in so-called Ortho-NC-STOs. The primary target of reaching record high STO frequencies, 12 GHz, at close to zero field, 0.02 Tesla, was achieved. However, in large external fields, &gt;0.4 Tesla, an entirely new magnetodynamic object, a “magnetic droplet”, theoretically predicted in 1977, was discovered experimentally. Detailed experiments, combined with micromagnetic simulations, demonstrate the formation of a magnetic droplet with a partially reversed magnetization direction underneath the NC, and a zone of large amplitude precession in a region bounding the reversed magnetization. The magnetic droplet exhibits a very rich dynamics, including i) auto-modulation as a combine of droplet frequency with a slow time evolution (few GHz) of un-centering the droplet mode under the NC, ii) droplet breathing as reversible deformation of droplet mode with ½ droplet frequency. All observation of droplet opens a new mechanism of excitation for future fundamental studies as well as experiments especially for domain wall electronics and nano-scopic magnetism. / <p>QC 20121119</p>

No description available.

In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.

No description available.

Les nano-oscillateurs à transfert de spin (STNO) sont des candidats prometteurs pour la réalisation de composants radiofréquence (RF) intégrés, du à leur taille nanométrique, l'importante gamme de fréquences de base qu'ils peuvent couvrir, ainsi qu'à leur accordabilité autour de ces fréquences de base. Le signal RF est obtenu grâce à l'effet de transfert de spin (STT) qui donne lieu à une oscillation non-linéaire de l'aimantation dans un élément magnétorésistif. Jusqu'ici, ces excitations ont été examinées dans le cadre d'une couche magnétique isolée, c'est-à-dire sans prendre en compte le couplage entre couches. Cependant, nombreux aspects du spectre d'excitation ne peuvent pas être expliqués si l'on considère une couche isolée. Dans cette thèse nous nous attacherons à répondre à la question importante du couplage dynamique entre couches magnétiques dans un nanopilier magnétorésistif, afin de développer une meilleure compréhension des spectres d'excitation, et en particulier la dépendance en courant et champ magnétique appliqué des caractéristiques du pic d'émission, telles que la largeur de raie et la fréquence. Une première étude est réalisée pour un système composé de deux couches ferromagnétiques, couplées entre elles par le couplage RKKY (ce système est appelé un ferrimagnétique synthétique (SyF)). Le couplage induit des différences importantes dans la dépendance en courant de la fréquence par rapport aux excitations d'une couche isolée. Ces différences sont expliquées par l'important couplage dynamique RKKY. Une seconde étude prend en considération une interaction plus complexe, ayant lieu dans un nano-pilier STNO standard basé sur jonctions tunnel ou vannes de spin. Ce dispositif est composé d'un SyF ainsi que d'une couche libre(FL) magnétique, séparés par une fine couche métallique ou isolante. Pour ce système, en plus du couplage dynamique RKKY propre au SyF, nous prenons en compte le couplage dynamique généré par le champ dipolaire ainsi que le spin-torque mutuel (MSTT) entre la couche libre et le SyF. Ce couplage multiple donne lieu à deux signatures distinctes. La première est l'apparition d'un « saut » dans le spectre d'excitation dû à l'hybridation des modes SyF and FL dans le régime atténué. Le second est dû à l'interaction entre les excitations en régime entretenu, éventuellement via leurs composantes harmoniques, avec les excitations en régime atténué. Cette interaction donne lieu à des discontinuités dans la dépendance fréquence – champ, ce lorsque les excitations FL sont prédominantes. Il est intéressant de noter que cela mène à des régions ou la largeur de raie est diminuée. De plus, lorsque les excitations SyF sont prédominantes, la largeur de raie est diminuée par rapport aux cas ou les excitations FL sont prédominantes. Partant de ces observations, nous proposons une structure plus complexe, où un seconde couche de type SyF remplace la couche libre. Les résultats obtenus par une combinaison d'expériences, de simulations numériques et d'analyse analytique, montrent le rôle important des interactions dynamiques dans un nano-pilier. Ils ouvrent de nouvelles voies pour la conception de configurations STNO qui mèneront à des améliorations des performances du signal ainsi synthétisé. / Spin-torque nano-oscillators (STNOs) are promising candidates for integrated radiofrequency (RF) components due to their nanoscale size, the large range of base frequencies that can be covered, as well as the large achievable tuning ranges around the base frequency. The RF signal is obtained due to the spin transfer torque (STT) generating a non-linear magnetization oscillation in a magnetoresistive device. In the past, these excitations were investigated using the picture of a single (or independent) layer. However, many features of the excitation spectra observed experimentally in nanopillar devices cannot be explained considering a single layer. In this thesis we address the important question on the dynamical coupling between the magnetic layers inside a magneto-resistive nanopillar device, to gain a better understanding of the excitation spectra, i.e. the dependence of the frequency and the linewidth on current and applied magnetic field. A first study is realized for a coupled system, composed by two ferromagnetic layers, coupled by the interlayer RKKY coupling (so called Synthetic Ferrimagnet SyF). Due to the coupling the frequency dependence versus current is different as compared to excitations of a single layer. This is explained by the strong dynamical RKKY coupling. A second study considers a more complex interaction, occurring within standard STNO nanopillar spin valves or tunnel junctions. They are composed by a SyF separated by a metallic or insulating spacer respectively from the single free layer (FL). For this system we take into account besides the RKKY coupling within the SyF, also the dynamical dipolar field coupling and the mutual spin torque (MSTT) between the SyF and the free layer. We find two definite signatures arising from this coupling. The first is a gap in the steady state excitation spectra that is due to the hybridization of the SyF and FL modes in the damped regime. The second is the possibility of the spintorque driven excitation or its harmonics with the damped modes leading to discontinuities in the frequency field dependence when the free layer is dominantly excited. Interestingly this leads to a region of reduced linewidth. Furthermore for SyF layer dominated excitations, the linewidth is lower than in the FL dominated excitations. From these observations we propose a more complex structure, composed by two SyF layers where the single FL is replaced by a SyF. The results obtained by a combination of experiments, numerical simulations and analytical analysis, demonstrate the important role of the dynamic interactions in nanopillar STNOs and provide routes for designing novel STNO configurations that should lead to improved microwave performances.

The recent discovery that a spin-polarized current can exert a large torque on a ferromagnet, through direct transfer of spin angular momentum, offers the possibility of electrical current controlled manipulation of magnetic moment in nanoscale magnetic device structures. This so-called spin torque effect holds great promise for two applications, namely, spin torque oscillators (STOs) for wireless communication and radar communication, and spin transfer torque RAM (STT-RAM) for data/information storage.   The STO is a nanosized spintronic device capable of microwave generation at frequencies in the 1-65 GHz range with high quality factors. Although the STO is very promising for future telecommunication, two major shortcomings have to be addressed before it can truly find practical use as a radio-frequency device. Firstly, its very limited output power has to be significantly improved. One possibility is the synchronization of two or more STOs to both increase the microwave power and further increase the signal quality. Synchronization of serially connected STOs has been suggested in this thesis. In this configuration, synchronization relies on phase locking between the STOs and their self-generated alternating current. While this locking mechanism is intrinsically quite weak, we find that the locking range of two serially connected spin-valve STOs can be enhanced by over two orders of magnitude by adjusting the circuit I-V phase to that of an intrinsic preferred phase shift between the STO and an alternating current. More recently, we have also studied the phase-locking of STOs based on magnetic tunnel junctions (MTJ-STO) to meet the power specifications of actual application where the rf output levels should be above 0 dBm (1 mW). In addition to the spin torque terms present in GMR spin valves, MTJs also exhibit a significant perpendicular spin torque component with a quite complex dependence on both material choices and applied junction bias. We find that the perpendicular torque component modifies the intrinsic preferred I-V phase shift in single MTJ-STOs in such a way that serially connected STOs synchronize much more readily without the need for additional circuitry to change the I-V phase.   Secondly, equal attention has been focused on removing the applied magnetic field for STO operation, which requires bulky components and will limit the miniaturization of STO-based devices. Various attempts have been made to realize STOs operating in zero magnetic field. By using a tilted (oblique angle) polarizer (fixed layer) instead of an in-plane polarizer (standard STO), we show zero field operation over a very wide polarizer angle range without sacrificing output signal. In addition, the polarizer angle introduces an entirely new degree of freedom to any spin torque device and opens up for a wide range of additional phenomena.   The STT-RAM has advantages over other types of memories including conventional MRAM in terms of power consumption, speed, and scalability. We use a set of simulation tools to carry out a systematic study on the subject of micromagnetic switching processes of a device for STT-RAM application. We find that the non-zero k spin wave modes play an important role in the experimentally measured switching phase boundary. These may result in telegraph transitions among different spin-wave states, and be related to the back-hopping phenomena where the switching probability will decrease with increasing bias in tunnel junctions. / QC 20100819

Understanding magnetization reversal is very important in designing high density and high data transfer rate recording media. This research has been motivated by interest in developing new nonvolatile data storage solutions as magnetic random access memories - MRAMs. This dissertation is intended to provide a theoretical analysis of static and dynamic magnetization switching of magnetic systems within the framework of critical curve (CC). Based on the time scale involved, a quasi-static or dynamic CC approach is used. The static magnetization switching can be elegantly described using the concept of critical curves. The critical curves of simple uncoupled films used in MRAM are discussed. We propose a new sensitive method for CC determination of 2D magnetic systems. This method is validated experimentally by measuring experimental critical curves of a series of Co/SiO2 multilayers systems. The dynamics switching is studied using the Landau-Lifshitz-Gilbert (LLG) equation of motion. The switching diagram so-called dynamic critical curve of Stonerlike particles subject to short magnetic field pulses is presented, giving useful information for optimizing field pulse parameters in order to make ultrafast and stable switching possible. For the first time, the dynamic critical curves (dCCs) for synthetic antiferromagnet (SAF) structures are introduced in this work. Comparing with CC, which are currently used for studying the switching in toggle MRAM, dCCs show the consistent switching and bring more useful information on the speed of magnetization reversal. Based on dCCs, better understanding of the switching diagram of toggle MRAM following toggle writing scheme can be achieved. The dynamic switching triggered by spin torque transfer in spin-torque MRAM cell has been also derived in this dissertation. We have studied the magnetization's dynamics properties as a function of applied current pulse amplitude, shape, and also as a function of the Gilbert damping constant. The great important result has been obtained is that, the boundary between switching/non-switching regions is not smooth but having a seashell spiral fringes. The influence of thermal fluctuation on the switching behavior is also discussed in this work.

Cette thèse comporte deux parties. L'objectif de la première partie était l'implémentation d'une méthode de résolution de l'équation dynamique de Landau-Lifshitz-Gilbert fondée sur l'approximation des éléments finis. Deux approches ont été présentées: la première reposant sur une formulation avec contrainte et la seconde mettant en œuvre des fonctions tests dans le plan tangent à l'aimantation. Seule la seconde approche reproduit la dynamique obtenue en différences finies sur des cas tests. Dans la seconde partie, le but était d'étudier le déplacement de parois de domaines magnétiques sous l'effet d'un champ magnétique ou d'un courant polarisé en spin dans des systèmes à anisotropie perpendiculaire. Il a été nécessaire d'introduire dans l'équation dynamique les termes dus au transfert de spin. Des systèmes idéaux et des systèmes avec différents types de défauts ont été étudiés. Les résultats numériques ont été comparés avec les données expérimentales disponibles.