In the scope of this thesis spin transfer torque (STT) driven switching and resonances in point contact experiments are investigated. In the first part, the focus is on STT driven switching events in magnetic devices with different tilt of the magnetization with respect to the thin film sample plane. Varying tilt is reached by different magnetic multilayers as Co/Ni and Co/Pt and the e efficiency of STT is compared by measuring the magneto resistance (MR) traces. As expected it was observed that tilting the magnetization of one layer with respect to the other, can improve STT efficiency. This was confirmed by micromagentic simulations using OOMMF. In the second part of this thesis, STT driven resonances in an exchange-biased spin valve (EBSV) were investigated by applying ac (microwave) and dc currents while sweeping the applied magnetic field. The resulting magnetodynamics were observed by measuring the rectified voltage which appears across the sample. To characterize the sample first the well known and understood ferromagnetic resonance (FMR) was excited. After that the power of the applied ac current was increased and a second resonance at a smaller magnetic field could be observed. This resonance structure was investigated and shown to be due to parametric resonance. This non-linear excitation appears in oscillator systems, if one or both parameter (damping, eigen frequency) oscillate in time. In the STT driven resonance experiments, the accurrent causes the damping to oscillate and therefore drives the system into parametric resonance. / text

This research focuses on device design and process integration of high density nonvolatile memory devices. Research was carried out to improve scaling of floating gate memories by increasing charge density as well as spin-based memories by reducing critical switching current. This work demonstrates fabrication of CMOS-compatible nonvolatile hybrid memory device using fullerene molecules as a floating gate. Molecules have dimensions of several Angstroms resulting in an electron density of ~10¹³ cm⁻² or higher. In hybrid MOSCAPs, fullerenes were encapsulated between inorganic oxides, i.e. SiO₂ as a tunnel oxide and HfO₂ as a control oxide. Introduction of a high-k material as a control oxide improves capacitive coupling between control gate and floating gate as well as the program/erase efficiency. The MOS capacitors demonstrate nonvolatile memory operation at room temperature. The device data infers that program/erase mechanism in fullerene devices is Fowler-Nordheim tunneling; however, retention is determined by trap-assisted tunneling. The next part of the work focused on spin-transfer-torque (STT) based magnetic memory. Spin-based memory has the unique potential to be the universal memory because of its high density, fast switching, and nonvolatility. This work presents STT switching of perpendicular magnetic anisotropy (PMA) spin-valves with tilted magnetization using point contact measurement. The PMA materials have high coercivity resulting in good retention and tilted magnetization induces precessional switching resulting in a lower switching current density. First, micromagnetic simulations were performed for spin-valves with tilted magnetization and precessional switching was observed to reduce the switching current. Then, spin-valve structures were fabricated by e-beam evaporation. The structure consisted of Co/Pt and Co/Ni layers, where the thickness of the layers was optimized to obtain different amount of tilt in magnetization. Point contact measurements of tilted spin-valves show STT switching, where the switching field of the free layer varies with the magnitude and sign of the applied current. The observed STT effect is stronger in a 45° tilted spin-valve compared to a 12° tilted device presumably due to the tilted spin polarization. However, tilting introduces nonuniform effective field and canting of the domains which affect the STT. / text

In the present thesis we introduce the reader to the field of spintronics and explore new phenomena, such as spin transfer torques, spin filtering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.

Spintronics is a rapidly growing research field due to scalability, integrablility within existing VLSI architecture, significantly reduced switching energy and latency while maintaining stable bit orientation (Spin-up, Spin-down). For the first time sub-5nm Spin Transfer Torque –Magnetic Tunneling Junctions (STT-MTJ) were investigated utilizing various Integrated Circuit (IC) fabrication techniques to evaluate novel concepts in logic switches. Tunneling Magnetoresistance (TMR) was measured in STT-MTJ stacks of Ta/CoFeB/MgO/CoFeB/Ta with differing diameter ferrimagnetic CoFe2O4 nanoparticles (10nm, 4nm and 2nm) embedded in the MgO layer. MR was detected in the 2nm and 4nm particle devices and demonstrated evidence of single electron transport. Tri-layer STT-MTJ devices were fabricated using a thin film stack of Ta/Ru/Ta/CoFeB(M1)/MgO/CoFeB(M2)/MgO/CoFeB(M3)/Ta. The overall diameter of the stack was reduced to sub-20nm using Focused Ion Beam (FIB) to mill away extra material. The coercivities of the ferrimagnetic CoFeB layers were modified during thin film deposition by altering sputter conditions. Field Applied- Magnetic Force Microscopy (FA-MFM) was used to detect four different magnetic intensities corresponding to three discreet resistances in the singly addressed device, making this architecture a candidate for neuromorphic computational applications. Lastly a lithographic-less architecture was developed to mass fabricate and electo-mechanically probe multi-layered, single point, sub-5nm particle based STT-MTJ devices using off-the-shelf anodized nanoporous alumina. Once fabricated, the devices were probed to measure their IV characteristics and magnetoresistance (MR). The unprecedented MR changes on the order of 50,000% at room temperature suggest quantum mechanical behavior.

Thermoelectricity can directly convert a temperature difference into a voltage or charge current. Recently, the development of spin caloritronics has introduced spin as another degree of freedom in traditional thermoelectrics. This discovery bodes a new generation of magnetic random access memories (MRAMs), where thermal spin-transfer torque (TSTT) rather than voltage driven spin-transfer torque (STT) is used to switch the magnetization in magnetic tunnel junctions (MTJs). To advance the rising trend of spin caloritronics, the coupling of charge, spin, and heat flow during electron transport in MTJs was systematically studied in this thesis. To begin with, the static transport properties of MTJs were studied by observing current dependent tunnel magnetic resistance (TMR). The observed decrease of TMR with a biased current is attributed to the change in spin polarization of the free ferromagnetic layer. A phenomenological model has been built based on the current dependent polarization, which agrees with our experimental results. Next, the Seebeck rectification effect in MTJs was studied. By applying microwave currents to MTJs, an intrinsic thermoelectric coupling effect in the linear response regime of MTJs was discovered. This intrinsic thermoelectric coupling contributes a nonlinear correction to Ohm's law. In addition, this effect can be controlled magnetically since the Seebeck coefficient is related to magnetization configuration. Finally, TSTT in MTJs was systematically studied. A laser heating technique was employed to apply a temperature difference across the tunnel barrier and ferromagnetic resonance (FMR) spectra were measured electrically through spin rectification. By analyzing the FMR spectra, TSTT in MTJs was observed and the angular dependence of TSTT was found to be different from dc-biased STT. By solving the Landau-Lifshitz-Gilbert equation including STT, the experimental observations were well explained. The discovery of Seebeck rectification refines the previous understanding of magneto-transport and microwave rectification in MTJs and provides a new possibility for utilizing spin caloritronics in high-frequency applications. The study of TSTT in MTJs shows clear experimental evidence of TSTT in MTJs. Further optimization of the design of MTJs may succeed in decreasing the necessary switching fields strength or even achieve a switching by only TSTT in MTJs. / February 2017

Spintronics is the study of mutual dependence of magnetization and electron transport, which forms a complementary picture in ferromagnetic (FM) materials. Recently, spintronics based on antiferromagnetic (AF) materials has been suggested. However, a systematic study is not yet available, and a complementary picture of the AF dynamics with electron transport is highly desired. By developing a microscopic theory, we predict the occurrence of spintronic phenomena both in bulk AF texture and on the interface of AF with normal metals. For the bulk, we find that the electron dynamics becomes adiabatic when the local staggered field is varying slowly over space and time, by which the spin-motive force and the reactive spin-transfer torque (STT) are derived as reciprocal effects. While the former generates a pure spin voltage across the texture, the latter can be used to drive AF domain wall and trigger spin wave excitation with lower current densities compared to FM materials. For the interface, by calculating how electrons scatter off a normal metal -antiferromagnet heterostructure, we derive the pumped spin and staggered spin currents in terms of the staggered order parameter, the magnetization, and their rates of change; the reactions of an incident spin current on the antiferromagnet is derived as STTs. These effects are applicable to both compensated and uncompensated interfaces with a similar order of magnitude. In contrast to FM materials, the direction of spin pumping is controlled by the circular polarization of driving microwave; and conversely, the chirality of AF spin wave is tunable by the direction of spin accumulation. / text

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第20894号 / 理博第4346号 / 新制||理||1624(附属図書館) / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)教授 川上 則雄, 教授 松田 祐司, 教授 前野 悦輝 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DFAM

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Spintronics in metallic multilayers, composed of ferromagnetic (F) and non-magnetic (N) metals, grew out of two complementary discoveries. The first, Giant Magnetoresistance (GMR), refers to a change in multilayer resistance when the relative orientation of magnetic moments in adjacent F-layers is altered by an applied magnetic field. The second, Spin-Transfer-Torque (STT), involves a change in the relative orientation of F-layer moments by an electrical current. This novel physical phenomenon offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Because of its small size (<10nm), point contact is a very efficient probe of electrical transport properties in extremely small sample volumes yet inaccessible with other techniques. We have observed the point-contact excitations in magnetic multilayers at room temperature and extended the capabilities of our point-contact technique to include the sensitivity to wavelengths of the current-induced spin waves. Recently MacDonald and coworkers have predicted that similar to ferromagnetic multilayers, the magnetic state of an antiferromagnetic (AFM) system can affect its transport properties and result in antiferromagnetic analogue of giant magnetoresistance (GMR) = AGMR; while high enough electrical current density can affect the magnetic state of the system via spin-transfer-torque effect. We show that a high density dc current injected from a point contact into an exchange-biased spin valve (EBSV) can systematically change the exchange bias, increasing or decreasing it depending on the current direction. This is the first evidence for current-induced effects on magnetic moments in antiferromagnetic (FeMn or IrMn) metals. We searched for AGMR in multilayers containing different combinations of AFM=FeMn and F=CoFe layers. At low currents, no magnetoresistance (MR) was observed in any samples suggesting that no AGMR is present in these samples. In samples containing F-layers, high current densities sometimes produced a small positive MR – largest resistance at high fields. For a given contact resistance, this MR was usually larger for thicker F-layers, and for a given current, it was usually larger for larger contact resistances (smaller contacts). We tentatively attribute this positive MR to suppression at high currents of spin accumulation induced around and within the F-layers. / text

Magnetic Logic Devices have the advantage of non-volatility, radiation hardness, scalability down to the sub-10nm range, and three-dimensional (3D) integration capability. Despite these advantages, magnetic applications for information processing remain limited. The main stumbling block is the high energy required to switch information states in spin-based devices. Recently, the spin transfer torque (STT) effect has been introduced as a promising solution. STT based magnetic tunneling junctions (MTJs), use a spin polarized electric current to switch magnetic states. They are theorized to bring the switching energy down substantially. However, the switching current density remains in the order of 1 MA/cm2 in current STT-MTJ devices, with the smallest device reported to date around 10nm. This current density remains inadequately high for enabling a wide range of information processing applications. For this technology to be competitive in the near future it is critical to show that it could be favorably scaled into the sub-10-nm range. This is an intriguing size range that currently remains unexplored. Nanomagnetic devices may display promising characteristics that can make them superior to their semiconductor counterparts. Below 10nm the spin physics from the vii surface become dominate versus those due to volume. The goal is to understand the size dependence versus the switching current.