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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
11

Electrical Performance of Copper-Graphene Nano-Alloys

Smith, Jacob A. 13 June 2019 (has links)
No description available.
12

Design of a Temperature Independent MOSFET-Only Current Reference

Nukala, Utthej 15 December 2011 (has links)
No description available.
13

Referenční zdroje napětí a proudu / Voltage and current reference sources

Skalický, Pavel January 2011 (has links)
The topic of the master´s thesis are voltage and current reference sources. There is detailed description of current and voltage references, which are basic building blocks of many analog circuits, in the theoretical part. Next part of the master´s thesis is the design of a voltage reference source, the design of a voltage reference generating two voltages and a current reference source. The correct function of all circuits have been verified using simulations, especially dependence of the output voltage or current on supply voltage or dependence of the output voltage or current when the ambient temperature is changed.
14

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials

January 2016 (has links)
abstract: Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (τf) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin of the observed magnetically-induced shifts in the dielectric resonator frequency originates from the same mechanism, as described by the Kramers-Kronig relations. The temperature coefficient of resonator frequency, τf, is related to three material parameters according to the equation, τf = - (½ τε + ½ τµ + αL), where τε, τµ, and αL are the temperature coefficient of dielectric constant, magnetic permeability, and lattice constant, respectively. Each of these parameters for dielectric materials of interest are measured experimentally. These results, in combination with density functional simulations, developed a much improved understanding of the fundamental mechanisms responsible for τf. The same experimental methods have been used to characterize in-situ the physical nature and concentration of performance-degrading point defects in the dielectrics of superconducting planar microwave resonators. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2016
15

Termomechanická spolehlivost pájeného připojení elektronických modulů s LTCC / Thermomechanical reliability of solder connection in electronic modules with LTCC

Krajíček, Michal January 2011 (has links)
This thesis is considered about interconnect PCB with microelectronic and electronic modules and continuing on thesis MODERN CAUSES OF ASSEMBLY MICROELECTRONICS AND ELECTRONICS MODULES. This thesis includes, definition of termomechanical strain in solder joints and description of LTCC technology. Practical part includes characterization the causes of assembly with usage chip component and proposal footprint for PCBs, modules and results of temperature cycling of tested modules.
16

Development of High-Performance Aluminum Conductors: A Study of Additive and Process Influence on Electrical Performance

Nittala, Aditya 24 May 2022 (has links)
No description available.
17

Design and Simulation of a Temperature-Insensitive Rail-to-Rail Comparator for Analog-to-Digital Converter Application

Kollarits, Matthew David 18 August 2010 (has links)
No description available.
18

Effect of Vortex Roll-up and Crevice Mass Flow on Ignition in a Rapid Compression Machine

Chomier, Mickael Thierry 19 September 2013 (has links)
No description available.
19

Development Of High Performance Uncooled Infrared Detector Materials

Kebapci, Basak 01 February 2011 (has links) (PDF)
This thesis reports both the optimizations of the vanadium oxide (VOx) thin film as an active infrared detector material by the magnetron sputtering deposition method and its use during fabrication of proper resistors for the microbolometers. Vanadium oxide is a preferred material for microbolometers, as it provides high TCR value, low noise, and reasonable resistance, and a number of high-tech companies have used this material to obtain state-of-the-art microbolometer arrays. This material is first used in microbolometers by Honeywell, who provides its recipe with license agreements, and there is not much information in the literature for its deposition recipe. This is the first study at METU for development of vanadium oxide thin film for microbolometers. The VOx material deposition studies started by identifying the deposition parameters of the magnetron sputtering system in order to obtain proper VOx resistors for the readout electronics. The obtained recipe includes high temperature deposition conditions of VOx, however, this causes a diffusion problem on the electrodes, preventing to obtain a good contact to VOx. Also, high oxygen level in the depositions makes a contamination on the electrodes. A number of studies were done to determine a proper electrode material which is proper with the deposition conditions of the VOx. Characterization of the vanadium oxide samples is done by XRD and XPS measurements to see the relation between the phases and resistivity of the vanadium oxide. It is known that V2O5 phase provides a high TCR and resistivity value, and the XRD results show that this phase is dominant in the highly-oxygen doped or annealed resistors. The TCR and noise measurements are done using resistors implemented with the developed VOx film, after the etching processes of the both VOx and the electrodes are optimized. The contamination on the electrodes is prevented by the help of a newly designed process. The TCR measurement results show that annealing of the resistors affect the TCR values, i.e., increasing the annealing duration increases the TCR values of the resistors. Two different resistors with different deposition conditions are annealed to see the effect of annealing, where TCR results of the resistors are -0.74%/K and -0.8 %/K before annealing. The TCR values of these resistors increase to -1.6 %/K and -4.35 %K, respectively, after annealing in same conditions, showing that both the deposition conditions and annealing change the TCR significantly. Although good TCR values are obtained, the noise values of the VOx resistors are much higher than the expected values, which suggest a further study to determine the cause of this noise.
20

Development Of High Performance Active Materials For Microbolometers

Eroglu, Numan 01 September 2011 (has links) (PDF)
This thesis reports the development of Vanadium Tungsten Oxide (VWO) film as an active detector material for uncooled infrared detectors by using the reactive DC magnetron co-sputtering method. VWO is a doped form of the Vanadium Oxide (VOx) which is known as a prominent material for uncooled infrared detectors with its high TCR, low resistivity, and low noise properties. VOx is a widely preferred material for commercialized uncooled infrared detectors along with its drawbacks. Fabrication is fairly difficult due to its unstable material properties and the need for low process temperatures for a monolithic, CMOS compatible surface micromachining process. Hence, a new material with high performance and easier fabrication is needed. This thesis is the first study at METU on the development of high-performance VWO as an active detector material for uncooled infrared detectors. Deposition studies of VWO primarily started by measuring the effects of deposition parameters upon the magnetron sputtering system. Because the high effectiveness of the tungsten doping has been obtained for the doping level below 10% according to literary information, maximum vanadium (V) deposition rate together with minimum tungsten (W) deposition rate has been initially aimed. TCR of the VWO films has been measured between -2.48 %/K and -3.31 %/K, and the variation of noise corner frequency from 0.6 kHz to 8 kHz has been observed. In addition to these results of VWO, a favorable VOx recipe which has the highest performance done at METU in terms of resistance, TCR, noise and uniformity has also attained during the studies. Structural characterization of VWO is achieved using XPS, XRD, and AFM characterization techniques. Other than the sputtering parameters, post-annealing process and oxygen plasma exposure was examined as well. A general observation of the post-annealing is that it decreases not merely the TCR but also the noise of the deposited film. A short-period oxygen plasma exposure has a constructive effect on the noise behavior. Fabricated vanadium tungsten oxide with sandwich type resistor structure shows very close but better bolometric properties when compared with the yttrium barium copper oxide (YBCO), which is another material being studied in scope of other theses at METU. XPS, XRD and AFM characterization methods have been used for the structural characterization of vanadium-tungsten-oxide.

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