In this doctoral thesis the two dimensional material graphene has been studied in depth with particular respect to Zener tunnelling devices. From the hexagonal structure the Hamiltonian at a Dirac point was derived with the option of including an energy gap. This Hamiltonian was then used to obtain the tunnelling properties of various graphene nano-devices; the devices studied include Zener tunnelling potential barriers such as single and double graphene potential steps. A form of the Landauer formalism was obtained for graphene devices. Combined with the scattering properties of potential barriers the current and conductance was found for a wide range of graphene nano-devices. These results were then compared to recently obtained experimental results for graphene nano-ribbons, showing many similarities between nano-ribbons and infinite sheet graphene. The methods studied were then applied to materials which have been shown to possess three dimensional Dirac cones known as topological insulators. In the case of Cd3As2 the Dirac cone is asymmetrical with respect to the z-direction, the effect of this asymmetry has been discussed with comparison to the symmetrical case.

Mitochondria are essential organelles as they produce most ATP to support cellular activities, synthesize critical metabolic factors and are involved in lipid and phospholipid metabolism as well as calcium signalling. The oxidative phosphorylation (OXPHOS) system, present at the inner mitochondrial membrane, plays role in regulation of cellular metabolism and survival of cancer cells. Recent studies show importance of OXPHOS in growth of cancer cells via regulation of the de novo pyrimidine synthesis pathway. Dihydroorotate dehydrogenase (DHODH), a flavoprotein localized in the inner mitochondrial membrane, converts dihydroorotate (DHO) to orotate within the de novo pyrimidine synthesis pathway, generating electrons that are transferred, via redox- cycling of ubiquinone, to complex III (CIII) of respiratory chain. Since DHODH is functionally linked to CIII activity, impairment of respiration results in reduced activity of DHODH and pyrimidine synthesis. Therefore, mitochondrial damage or mutation in mitochondrial DNA (mtDNA) leads to decreased respiration, cancer cell proliferation and delay of tumour growth. As a compensation for damaged mitochondria, horizontal transfer of functional mitochondria from donor somatic cells to the mitochondria-damaged tumour cells was demonstrated. This...

For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. In this thesis, a surface science approach has been employed to study the formation of interfaces in systems relevant for transistor and solar cell applications. Surface science methodology entails ultra high vacuum environment, single crystalline surfaces, submonolayer control of deposited material, surface sensitive spectroscopy and atomic resolution microscopy. The primary experimental method for characterization is electron spectroscopy. This is a family of very powerful experimental techniques capable of giving information on the atomic level. Additionally, studies have been performed using scanning tunnelling microscopy. Combined these two methods can provide an atomic level characterisation of the geometric and electronic properties of the surface. The emphasis of this work is placed on ultra thin TiO2 and ZrO2 films grown on silicon substrates by means of ultra-high vacuum metal-organic chemical vapour deposition. ZrO2 has also been grown on SiC and FeCrAl. Deposition has been performed with different process parameters. The interface region of each film has been characterised. The band alignment, a most important issue with regard to the development of new transistor devices, for the ZrO2/Si(100) system has been explored. Decomposition pathways of the metal organic precursors have been studied in detail. Changing process parameters is shown to alter both the precursor decomposition pathway and the nature of the interface region, thus opening the possibility to tailor the material function. The titanium dioxide films grown in situ have shown to be excellent models of nanostructured electrode materials. In this spirit, interfaces of model systems for the solid-state dye-sensitized solar cell have been studied. Links between device performance and interface structure have been elucidated.

The semi-classical black hole tunnelling method is a useful technique to calculate black hole temperature and understand black hole thermodynamics. I will investigate the black hole tunnelling method in detail. I will compare two different approaches used to calculate black hole tunnelling. The tunnelling method can be applied to a broad range of spacetimes and I will show this explicitly in order to demonstrate the robustness of the tunnelling technique. In particular, I will apply the tunnelling method to spacetimes including: Rindler (the method can recover the Unruh temperature), and more general spacetimes (such as Kerr-Newman and Taub-NUT). I will also discuss the 5d Kerr-Gödel spacetimes in detail (while showing a previous unobserved property of these spaces). Once the parameter space of Kerr-Gödel is understood in detail, I will show how the tunnelling method can also be successfully applied to the Kerr-Gödel black hole. Finally, the key result of my thesis involves extending the tunnelling method to model fermion emission. The previous tunnelling calculations all involved the emission of scalar particles. I will model the emission of spin-1/2 fermions from various spacetimes including the Rindler spacetime and general non-rotating black holes. I will also model the emission of charged spin-1/2 fermions from the Kerr-Newman spacetime to show that the method is also applicable to rotating spacetimes. In all these cases I show that the correct Hawking temperature (Unruh temperature in the case of Rindler) is recovered for spin-1/2 fermion emission. Although this final result is not surprising, it is an important result because it confirms that Dirac particles will radiate from the black hole at the same temperature as scalar particles. It has always been assumed that this is the case but there is very little literature involving fermion radiation of black holes. So the results of my calculations are twofold, I demonstrate that Dirac particles are emitted at the same temperature as scalar particles from a black hole and it shows how robust the semi-classical tunnelling technique is.

The semi-classical black hole tunnelling method is a useful technique to calculate black hole temperature and understand black hole thermodynamics. I will investigate the black hole tunnelling method in detail. I will compare two different approaches used to calculate black hole tunnelling. The tunnelling method can be applied to a broad range of spacetimes and I will show this explicitly in order to demonstrate the robustness of the tunnelling technique. In particular, I will apply the tunnelling method to spacetimes including: Rindler (the method can recover the Unruh temperature), and more general spacetimes (such as Kerr-Newman and Taub-NUT). I will also discuss the 5d Kerr-Gödel spacetimes in detail (while showing a previous unobserved property of these spaces). Once the parameter space of Kerr-Gödel is understood in detail, I will show how the tunnelling method can also be successfully applied to the Kerr-Gödel black hole. Finally, the key result of my thesis involves extending the tunnelling method to model fermion emission. The previous tunnelling calculations all involved the emission of scalar particles. I will model the emission of spin-1/2 fermions from various spacetimes including the Rindler spacetime and general non-rotating black holes. I will also model the emission of charged spin-1/2 fermions from the Kerr-Newman spacetime to show that the method is also applicable to rotating spacetimes. In all these cases I show that the correct Hawking temperature (Unruh temperature in the case of Rindler) is recovered for spin-1/2 fermion emission. Although this final result is not surprising, it is an important result because it confirms that Dirac particles will radiate from the black hole at the same temperature as scalar particles. It has always been assumed that this is the case but there is very little literature involving fermion radiation of black holes. So the results of my calculations are twofold, I demonstrate that Dirac particles are emitted at the same temperature as scalar particles from a black hole and it shows how robust the semi-classical tunnelling technique is.

The analysis presented in this thesis provides a methodology for grouted bolts design, based on empirical and analytical methods. Hence, the main objectives of this thesis are to offer practical means for better characterisation of poor to very poor rock masses, to better predict support pressure, and to develop an elasto-plastic analytical model for design of grouted bolts in tunnels excavated in such rock masses. To improve the applicability of the GSI (Geological Strength Index) in poor to very poor rock masses, using Broken Domain Structure (BSTR), Structure Rating (SR), and Intact Core Recovery (ICR), some modifications have been offered, resulting in the Modified-GSI. Applying rock-load height concept and Modified-GSI, an approach to estimate support pressure has been developed. The main advantage of this approach is its applicability in squeezing ground and anisotropic stress conditions. Numerical modelling was carried out in order to adjust the proposed support pressure equation. Considering convergence reduction approach, an elasto-plastic model based on the latest version of Hoek- Brown failure criterion has been developed for a more effective and practical grouted bolt design. The link between empirical approach and elasto-plastic solution makes it possible to reach more realistic and appropriate bolting pattern design. In this way, the need for the redesign procedure in the convergence reduction approach is eliminated. The results of the proposed elastic-plastic solution have been compared with a numerical model using FLAC2D, and a reasonable agreement was observed. The practical application of the developed methodology is depicted by an analysis of a case study in Turkey.

A combined geological and rock mechanics approach to tunnel face behaviour prediction, based on improved understanding of brittle fracture processes during TBM excavation, was developed to complement empirical design and performance prediction for TBM tunnelling in hard rock geological conditions. A major challenge of this research was combining geological and engineering terminology, methods, and objectives to construct a unified Geomechanical Characterisation Scheme. The goal of this system is to describe the spalling sensitivity of hard, massive, highly stressed crystalline rock, often deformed by tectonic processes. Geological, lab strength testing and TBM machine data were used to quantify the impact of interrelated geological factors, such as mineralogy, grain size, fabric and the heterogeneity of all these factors at micro and macro scale, on spalling sensitivity and to combine these factors within a TBM advance framework. This was achieved by incorporating aspects of geology, tectonics, mineralogy, material strength theory, fracture process theory and induced stresses. Three main approaches were used to verify and calibrate the Geomechanical Characterisation Scheme: geological and TBM data collection from tunnels in massive, highly-stressed rock, interpretation of published mineral-specific investigations of rock yielding processes, and numerical modelling the rock yielding processes in simulated strength tests and the TBM cutting process. The TBM performance investigation was used to identify the mechanism behind the chipping processes and quantify adverse conditions for chipping, including tough rock conditions and stress induced face instability. The literature review was used to identify the critical geological parameters for rock yielding processes and obtain strength and stiffness values for mineral-specific constitutive models. A texture-generating algorithm was developed to create realistic rock analogues and to provide user control over geological characteristics such as mineralogy, grain size and fabric. This methodology was applied to investigate the TBM chipping process to calibrate the Geomechanical Characterisation Scheme. A Chipping Resistance Factor was developed to combine the quantified geological characteristic factors and laboratory strength values to predict conditions with high risk of poor chipping performance arising from tough rock. A Stress-Related Chip Potential Factor was developed to estimate conditions with high risk of advance rate reduction arising from stress-induced face instability. / Thesis (Ph.D, Geological Sciences & Geological Engineering) -- Queen's University, 2008-09-25 23:58:58.071

Conselho Nacional de Desenvolvimento Científico e Tecnológico / We analyze the possibility of using aluminum nitride (AlN) as a piezoelectric tunnel barrier in magnetic or non-magnetic tunnel junctions. Samples in the form of monolayers, bilayers, multilayers and tunnel junctions were produced by magnetron sputtering from an aluminum metal target. The insulating AlN barrier was grown in a reactive atmosphere of argon and nitrogen. Through the monolayers and bilayers we investigated the growth conditions of AlN onto different substrates, buffer, and cap layers. Using x-ray diffraction and transmission electronic microscopy it was possible to verify the excellent degree of texturing of AlN films with the direction <002> perpendicular the substrate plane. The multilayer showed that the use of AlN as a piezoelectric tunnel barrier is feasible, since the crystallographic structure remains when the thickness of the AlN is drastically reduced to a thickness so that quantum tunneling is possible. We also held magnetization measurements and tunnel magnetoresistance in magnetic tunnel junctions. It is important that the coercive fields of the electrodes are different, so that from the application of an external field can be obtained a situation where the magnetization of the electrodes point in opposite directions. The average thickness of the tunnel barrier in multilayers and tunnel junctions were obtained by x-ray diffraction and transmission electron microscopy. The nonlinear IxV curves of tunnel junctions were measured at room temperature and at lower temperatures, and showed a linear behavior at low voltages, and a nonlinear behavior for higher voltages. Measurements of tunnel magnetoresistance showed spin dependent tunneling. Simulations using the Simmons model for symmetric barrier allowed us to obtain the effective area of tunneling, effective thickness of the barrier, and the height of the barrier. Effective area values are some orders of magnitude smaller than the actual area of the junctions, and transmission electron microscopy pictures show that the tunnel transport occurs at some hot spots. In the measurements of the IxV curves we observe a minimum thickness of 6nm for the insulating barrier to be piezoelectric, as the polarization effect was detected. The curves have a shift to negative bias, both in magnetic and non-magnetic tunnel junctions. Using the results of the simulation we verified the exponential pattern of resistance, normalized by the effective area of tunneling, depending on the thickness of the insulator. For effective barrier thickness above 1nm, the barrier height increases with insulator thickness, as expected. For barrier thickness between 0;8 and 1nm, there is a decline in barrier height. We have not found recorded in the literature this type of behavior for normal insulating systems or for piezoelectric materials. / Nesta tese analizamos a possibilidade do uso de nitreto de alumínio (AlN) como barreira túnel piezoelétrica em junções túnel magnéticas ou não magnéticas. Amostras na forma de monocamadas, bicamadas, multicamadas e junções túnel foram produzidas pela técnica de "magnetron sputtering"a partir de um alvo metálico de alumínio. A barreira isolante de AlN foi crescida em uma atmosfera reativa de argônio e nitrogênio. Através das monocamadas e das bicamadas investigamos as condições de crescimento do AlN sobre diferentes substratos, e camadas "buffer"e camadas "cap". Utilizando difração de raio-x e microscopia eletrônica de transmissão foi possível verificar o excelente grau de texturização dos filmes de AlN com a direção <002> perpendicular ao plano do substrato. As multicamadas mostraram que a utilização do AlN como barreira túnel piezoelétrica é viável, pois a estrutura cristalográfica se mantém quando a espessura do AlN é drasticamente reduzida até uma espessura que ocorra o fenômeno de tunelamento quântico. Também foram realizadas medidas de magnetização e de magnetorresistência túnel em junções túnel magnéticas. Nestas, é importante que os campos coercivos dos eletrodos sejam diferentes, para que a partir da aplicação de um campo externo seja possível obter uma situação onde os momentos magnéticos dos eletrodos apontem em sentidos contrários. A espessura média da barreira túnel nas multicamadas e junções túnel foram obtidas através de difração de raio-x e de microscopia eletrônica de transmissão. As curvas IxV não lineares das junções túnel foram medidas a temperatura ambiente e a baixa temperatura, e apresentaram um comportamento linear a baixas tensões e uma relação não linear para tensões mais elevadas. Para a realização de simulações foi utilizado modelo de Simmons para barreira simétrica. Os parâmetros obtidos através deste modelo são, a área efetiva de tunelamento Se f , a espessura efetiva da barreria te f e a altura da barreira f0. Através da observação dos resultados da área efetiva que são algumas ordens de grandeza menores que a área real da junção, e das imagens de microscopia eletrônica de transmissão podemos afirmar que o transporte túnel se dá por "hot spots". Nas medidas das curvas IxV observamos uma espessura mínima de 6nm para a barreira isolante piezoelétrica onde o efeito de polarização foi detectado. As curvas sofrem um deslocamento para tensões negativas, isto ocorre tanto nas junções túnel magnéticas como nas não magnéticas. Utilizando os resultados dos ajustes foi possível verificar o caráter exponencial da resistência, normalizada pela área efetiva de tunelamento, em função da espessura do isolante. Para espessura efetiva da barreira, a partir de 1nm, a altura da barreira aumenta com a espessura do isolante. Resultado este esperado, mostrando uma tendência do crescimento da altura da barreia com a espessura. Para espessura de barreia entre 0;8 e 1nm, há presença de um declínio na altura da barreira. Não encontramos registro na literatura deste tipo de comportamento para sistemas isolantes normais nem para materiais piezoelétricos. Medidas de magnetorresistência túnel nas junções mostraram que o tunelamento é dependente de spin.

This master thesis deals with a design of a Drevnovice tunnel primary lining at planned high speed rail corridor connecting Brno and Přerov. The whole design as well as defining of the most suitable tunnel excavation method are described. Thesis also contains a breakdown of the excavation, construction technology and the scheduling of geotechnical monitoring procedures. The Plaxis 2D program, based on the finite element method, was used to create numerical models of two cross sections of the Dřevnovice tunnel. Based on mathematical modeling outputs, a static calculation of the primary lining was calculated.

The work analyze current detection methods of anomalies and security incidents in DNS traffic, and than design new obfuscation techniques which are capable of evading anomaly detection. Network attacks, exploiting the DNS protocol for tunneling of other network traffic, were selected for implementation part of the work. Control of botnet is considered as malicious application of tunneling through the DNS protocol. The main result of the work is to emphasize the necessity of discovering new detection principles of anomalies and security incidents in DNS traffic.