Vanadium oxides are being used as the thermal sensing layer because of their applications in infrared detectors. They have high temperature coefficient of resistance, favorable electrical resistance and compatibility with the MEMS technology. Of all oxides of vanadium, only vanadium dioxide (VO2)has been highly investigated as it shows first order transition (semiconducting to metal transition-SMT)at 68 oC. First order transition is understood as the sharp change in the electrical resistance. The change in resistivity in this case is of the order of 105 over a temperature change of 0.1 oC at 68 oC in a single crystal. Doping vanadium oxides with elements like Mo and W reduce the transition temperature. This is very important for room temperature electrical and optical detection. Though most of the research groups subscribe to PLD, cost-effective methods with large area deposition are major focus of this research. Hence for synthesizing VO2 in bulk and thin films, Solution Combustion Synthesis (SCS), Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) Chemical vapour deposition (CVD)and microwave are explored. Synthesis of doped VO2 films in CVD has not been done extensively to yield optical quality thin films. Chapter I surveys the use of phase transition in oxides system for a variety of practical applications. In particular, Vanadium dioxide (VO2) is chosen as it is found to be very useful for infrared and metamaterials based applications. VO2 is known for its first-order semiconducting to metallic transition (SMT). This chapter attempts to explain the influence of processing, doping, annealing, etc on the SMT characteristics. Important aspects such as the idea of hysteresis in VO2 and similarity to martensitic transformation are discussed. The scope and objectives of the thesis are discussed here. Chapter II explains in detail the materials and methods used to synthesize VO2 both in bulk and in thin lm form and methods used to study their characteristics. Brief description on the principle and the working of the home-built experimental set up needed for this study is elicited. In chapter III, attempts were made to understand the phase stability of VO2 and the evolution of crystal structures during the phase transition. VO2 crystallizes in P21/c space group at room temperatures with lattice parameters a=5.752 Ab=4.526 Ac=5.382 Aα=90 β=122.60 γ=90 . Precise control of synthesis parameters is required in stabilizing pure phase in bulk as well as thin lm form. This study focuses on the novel large scale two step synthesis of VO2 using Solution Combustion Synthesis. This involves synthesis of product utilizing redox reaction between metal nitrate and suitable fuel. Generally the products are nanocrystalline in nature due to self-propagation of the exothermic combustion reaction. First step involved the synthesis of V2O5 by combustion reaction between Vanadyl nitrate and urea. In the second step, the as-synthesized V2O5 has been reduced by a novel reduction technique to form monophasic VO2. The presence of competing phases like M1, M2, M3 and R are investigated by XRD, Raman spectroscopy, DSC, Optical and high temperature X-ray diffraction. Chapter IV deals with the reduction in phase transition temperature by doping the SCS synthesized VO2 with W and Mo. Effect of doping on the transition temperature was studied using differential scanning calorimetry (DSC) in both W and Mo. Electrical characteristics of Mo doped VO2 and Optical characteristics of the W-doped VO2 were also studied using four probe resistivity measurements and UV-VIS Spectroscopy respectively. W addition was found to be more effective in reducing the phase transition temperature. To understand further more on the W addition, X-ray photo-electron spectroscopy measurements were performed. W-addition alters the V4+-V4+ bonding and with W addition it is observed that V was present in V3+state. W was present in W6+ state. The addition of W to VO2 introduces more electrons to the systems and disturbs the V4+-V4+ thus reducing the phase transition temperature of VO2. Chapter V describes the large scale, large area deposition of thin films of VO2 by a cost effective method. A novel technique to deposit vanadium dioxide thin films namely, UNSPACM is developed. This simple two-step process involves synthesis of a V2O5 lm on an LaAlO3(LAO) substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (P21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal{insulator transition (MIT) was observed at 61 oC, where the resistivity changes by four orders of magnitude. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 m. This indicates the suitability of the films for optical switching applications at infrared frequencies. A trilayer metamaterial absorber, composed of a metal structure/dielectric spacer/vanadium dioxide (VO2) ground plane, is shown to switch reversibly between reflective and absorptive states as a function of temperature. The VO2 lm, which changes its conductivity by four orders of magnitude across an insulator{metal transition, enables the switching by forming a resonant absorptive structure at high temperatures while being inactive at low temperatures. The fabricated metamaterial shows a modulation of the reflectivity levels of 58% at a frequency of 22.5 THz and 57% at a frequency of 34.5 THz. Chapter VI explains the W doped VO2 thin films synthesized by UN-SPACM. Morphology of the thin films was found to be consisting of globular and porous nanoparticles having size 20 nm. Transition temperature decreased with the addition of W. 1.8 at. %W doping in VO2 transition temperature has reduced upto 25 oC. It is noted that W-doping in the pro-cess of reducing the transition temperature, alters the local structure and also increases room temperature carrier concentration. The presence of W, as was seen in Chapter IV, altered V4+-V4+ bonds and introduced V3+. W was found to be in W6+ state suggesting W addition increased the carrier concentration. Hall Effect measurements suggested the increased carrier con-centration. The roughness of the synthesized films were very high for them to be of de-vice quality, despite encouraging results obtained by electrical measurements. Hence in order to further improve the smoothness and thereby the optical quality of thin films, Chemical Vapour Deposition (CVD) is employed. Chapter VII outlines the effect of processing parameters and post pro-cessing annealing on the semiconductor-metallic transition of VO2. Here in this chapter, the influence of substrate temperature on the SMT properties of VO2 is explored. At different substrate temperatures, the percentage of phase fraction of V in V3+, 4+ and V5+ differed. Besides, the morphology also varied with substrate temperatures. Similarly it is observed that with annealing the VO2 film deposited on glass substrates, SMT properties enhanced which was attributed to filling out of oxygen vacancies. Si based substrates and non-Si based substrates were used for depositing VO2 thin films by CVD. Their temperature coefficient of resistance and SMT properties were studied in order to understand their potential in bolometer and thermal to optical valve based applications. Chapter VIII involves the study of VO2 thin films for thermal to optical valves. ITO coated glass substrates were used for the purpose. Thin films were deposited by both UNSPACM and CVD. It was observed that the reflectivity pro les of the films synthesized by the above said methods were very different. Hence in the process of understanding the huge difference in the reflectivity pro les, classical harmonic oscillator, Lorentzian model was employed to t the experimental data at room temperature whereas Drude-Lorentzian model was used to t the data at higher temperature (at 100 oC- after transition). With this fitting plasma frequencies of the CVD films were calculated. It was observed that defect chemistry of films synthesized by these methods were different. In order to further improve the smoothness of the films, microwave method was proposed in Chapter IX. The preliminary results showed the presence of uniform spheres and 3 D hierarchical structures of VO2 consisting of nanorods. This was extended to deposit VO2 thin films on ITO. DSC and Infrared reflectance pro le of VO2 nanopowder suggested the phase transition. Chapter X summarizes the work done for the thesis and provides insights to the applications and to the future work. The work reported in this thesis has been carried out by the candidate as part of the Ph.D.program. She hopes that this would constitute a worth-while contribution towards development of VO2 thin film technology and its challenges for reliable infrared device applications.

Ces travaux sont issus d’une thèse CIFRE et de la collaboration entre la société Viessmann Faulquemont et le laboratoire de recherche l’Institut Jean Lamour. Ayant pour objectif de fortement réduire les problèmes liés aux hautes températures de stagnation dans les panneaux solaires thermiques, nous présentons une nouvelle génération d’absorbeur solaire intelligent à base de dioxyde de vanadium. Le dioxyde de vanadium, noté VO2, est un matériau présentant une transition métal-isolant (MIT) à une température critique (Tc) de 68°C. Cette transition s’accompagne d’une modification de la structure cristallographique. Le VO2 se trouve sous une forme monoclinique VO2(M) à basse température, et sous une forme rutile VO2(R) à haute température. Ce changement de structure s’accompagne d’une forte modification des propriétés optiques. La synthèse de ces films est réalisée à partir d’une couche de vanadium métallique déposée par pulvérisation. Un recuit d’oxydation-cristallisation est ensuite effectué pour obtenir une couche d’environ 400 nm de dioxyde de vanadium. Afin d’optimiser et d’augmenter la variation d’émissivité (Δε), la température et la durée du recuit sont étudiées. Dans un second temps, un dopage aluminium est réalisé afin d’augmenter l’effet de la transition thermochrome. Après optimisation, le passage au niveau industriel est un succès et des prototypes de taille 1 sont réalisés à partir de la couche thermochrome et de la couche standard afin d’être comparés dans des conditions normales d’utilisation / This work is a CIFRE thesis between VIESSMANN Faulquemont SAS society and the laboratory Institut Jean Lamour. In order to strongly reduce the problems associated with high stagnation temperature, we present a new generation of solar absorbent layers based on a smart thermochromic vanadium dioxide thin film. Vanadium dioxide (VO2) is a material which exhibit a metal insulator transition (MIT) at a critical temperature of 68°C (Tc). The transition is accompanied by a change in crystallographic structure VO2(M), while a rutile-like structure VO2(R) is obtained at high temperature. This structural change induces a drastic modification of the optical properties. The synthesis of vanadium-based films is performed using magnetron sputtering. We proceed to a subsequent annealing in air to form crystalline films of about 400 nm thickness. In order to increase the thermochromic effect of our thin film (Δε) we study the temperature and duration of the annealing. In a second time we try to increase the emissivity switch between the low and high temperature phase by adding an aluminum doping. After optimization, scale up have been successfully done and the optimized parameters have been used to build a prototype of thermochromic selective layer that has been compared to the standard industrial solar absorber

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / In this thesis, structural and electrical characteristics are investigated around the thermally triggered semiconductor to metal transition in VO2 thin films. The films, the metallics electrodes, as well as SiO2 buffer layers have been deposited by reactive magnetron sputtering onto Si substrates. The crystallographic and morphological characteristics have been observed through measurements of X-Ray diffraction as a function of the temperature, and atomic force microscopy (AFM). The nanoscale electrical characterization have been performed using a measurement system via nano-tips. The results of X-ray diffraction at room temperature revealed that the samples are polycrystalline and are strongly textured in the < 011 > direction, which is almost perpendicular to the substrate plane. The X-Ray diffraction spectra have been extracted at different temperatures to follow the crystallographic transition experienced by VO2 near the transition temperature. For films deposited on SiO2 (without electrodes) and the Ta electrode at temperatures below the critical temperature for the transition, the material presented in the monoclinic phase M1. Within the range of temperatures that comprises the transition occurs progressive appearance of the peak corresponding to the (110) plane of R rutile phase. Within a range at relatively higher temperatures, there is a coexistence of phases R and M1 and M2 may be the M2 monoclinic. As would be expected, the peak of rutile structure grows to the point of being virtually the only present when the temperature reaches about 80°C. The transition from one crystallographic film VO2 with Pd electrode was accompanied by diffraction measured at room temperature. The peak (011) of phase M1 is much smaller compared to the samples deposited on Ta electrode. However, contrary to the Ta electrode film which is likely to have grown in the shape of very small nano-grain or even amorphous form, the Pd electrode film is polycrystalline and highly textured. The transport properties during the electrical phase transition were investigated using injection of electrical current perpendicular to the sample plane. Films grown on Ta electrodes showed abrupt semiconductor-metal phase transitions in different nano-crystallites VO2. The IV characteristics of the film on the Pd electrode had an S-NDR region, specifically attributed to the formation of a filamentary current flow between the Pd probe and the electrode. The details of this phenomenon could not be established definitively, but if in fact the electrical transition is present in nano-crystallites measured, it was suggested that the origin of this conducting channel may be related to reminiscent earlier phase transitions. / Nesta tese, realizou-se uma investigação estrutural e elétrica em torno da transição semicondutor-metal desencadeada termicamente em filmes finos de VO2. Os filmes foram depositados por magnetron sputtering reativo, os eletrodos metálicos, bem como camadas buffers de SiO2 sobre os substratos de Si foram depositados por magnetron sputtering. As características cristalográficas e morfológicas foram evidenciadas através de medidas de difração de raios-X em função da temperatura e microscopia de força atômica (AFM), respectivamente. A caracterização elétrica, em nanoescala foi realizada utilizando-se um sistema de medidas via nano-ponteiras. Os resultados de difração de raios-X à temperatura ambiente revelaram que as amostras são policristalinas e estão fortemente texturizados com a direção < 011 > praticamente perpendicular ao plano do substrato. Os difratogramas em função da temperatura foram realizados para acompanhar a transição cristalográfica que o VO2 apresenta próximo a temperatura de 68°C. Para os filmes depositados sobre SiO2 (sem eletrodo) e sobre o eletrodo de Ta, em temperaturas abaixo da temperatura crítica para a transição, o material apresentou-se na fase monoclínica M1. Na faixa de temperaturas que compreende a transição, ocorre o surgimento progressivo do pico correspondente ao plano (110) da fase rutila R. Para uma faixa relativamente grande de temperaturas, há uma coexistência das fases M1 e R e, eventualmente da monoclínica M2. Como seria de se esperar, o pico da estrutura rutila cresce até o ponto de ser praticamente o único presente, quando a temperatura atingiu cerca de 80°C. A transição cristalográfica de um filme de VO2 com eletrodo de Pd foi acompanhada por medidas de difração à temperatura ambiente. O pico (011) da fase M1 é muito menor comparado ao das amostras depositadas sobre eletrodo de Ta. Porém, contrariamente ao eletrodo de Ta, que provavelmente tenha crescido na forma de nano-grãos muito pequenos ou mesmo na forma amorfa, o filme de Pd depositado é policristalino e bastante texturizado. As propriedades de transporte durante a transição de fase elétrica forma investigadas utilizando-se injeção de corrente elétrica perpendicular ao plano da amostra. Esta investigação, para os filmes crescidos sobre eletrodo de Ta, mostraram abruptas transições de fase semicondutor-metal em diferentes nano-cristalitos de VO2. As características I-V do filme com eletrodo de Pd apresentaram uma região com S-NDR, especificamente atribuída à formação de um regime filamentar de corrente entre a ponteira e o eletrodo de Pd. Os detalhes deste fenômeno não puderam ser estabelecidos de forma definitiva, mas se de fato a transição elétrica está presente nos nano-cristalitos medidos, sugeriu-se que a origem deste canal condutor pode estar relacionada com transições de fase anteriores e remanescentes.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / In earlier work done at the Laboratory of Magnetism and Magnetic Materials in Santa Maria, spectroscopy measurements of electrical impedance between 100 kHz and 1 GHz were a function of temperature in VO2 thin films along the metal insulator transition undergone by this material. These results suggested [127] that the Impedance Spectroscopy can be a useful tool to separate the contributions from those intrinsic material generated by morphological characteristics. For that such possibility could be actually realized, technological improvements were introduced in the system deposited by Magnetron Sputtering at Laboratory of Magnetism and Magnetic Materials as the addition of a Residual Gas Analyzer and improvements in the heating substrate holder. Spectroscopy measurements were performed in a wider range of frequencies and relaxation times extracted from them were compared with the structural characteristics of the samples obtained by X-ray diffraction and Atomic Force Spectroscopy. / Em trabalhos anteriores realizados no Laboratório de Magnetismo e Materiais Magnéticos em Santa Maria, medidas de espectroscopia de impedância elétrica entre 100 kHz e 1 GHz foram realizadas em função da temperatura em filmes finos de VO2, ao longo da transição metal isolante sofrida por este material. Estes resultados sugeriram [127] que a Espectroscopia de Impedância pode ser uma ferramenta útil para separar as contribuições intrínsecas do material daquelas geradas por características morfológicas. Para que tal possibilidade pudesse ser realmente efetivada, foram introduzidas melhorias técnicas no sistema de deposição por Magnetron Sputtering do Laboratório de Magnetismo e Materiais Magnéticos como a adição de um Analisador de Gás Residual e aperfeiçoamentos no sistema de aquecimento do porta substrato. Foram realizadas medidas de espectroscopia numa faixa mais ampla de freqüências e os tempos de relaxação delas extraídos. Essas medidas foram comparadas com as características estruturais das amostras obtidos por difração de Raios X e Espectroscopia de Força Atômica.

Submitted by Simone Souza (simonecgsouza@hotmail.com) on 2018-04-20T14:10:44Z No. of bitstreams: 1 DISS_2014_Raffael Chaves Juliano.pdf: 3302347 bytes, checksum: 174e8e990733d7d4d8b7abe09ac51a92 (MD5) / Approved for entry into archive by Jordan (jordanbiblio@gmail.com) on 2018-05-14T16:24:18Z (GMT) No. of bitstreams: 1 DISS_2014_Raffael Chaves Juliano.pdf: 3302347 bytes, checksum: 174e8e990733d7d4d8b7abe09ac51a92 (MD5) / Made available in DSpace on 2018-05-14T16:24:18Z (GMT). No. of bitstreams: 1 DISS_2014_Raffael Chaves Juliano.pdf: 3302347 bytes, checksum: 174e8e990733d7d4d8b7abe09ac51a92 (MD5) Previous issue date: 2014-11-28 / CAPES / Compostos de metais de transição, como o dióxido de vanadio (VO2), podem apresentar,em determinadas condições, a transição metal-isolante. No VO2, essa transição é acompanhada por uma transformação na sua estrutura cristalina, através da dimerização de átomos de vanadio presentes em sítios distintos. é dessa ligação entre dois sítios que emerge a ideia do dímero de Mott. Neste trabalho, utilizando o método da diagonalização exata, estudamos o modelo de Hubbard em sua versão estendida aplicado ao dimero de Mott, encontrando os seus autovalores e autovetores de energia. Variando os parâmetros do modelo, obtemos os resultados numéricos para os autovalores de energia do sistema. Realizamos ainda uma análise da ocupação eletrônica total e da compressibilidade de carga (densidade de estados) como função do potencial químico. No sentido de compreender melhor o sistema, estudamos o comportamento da dupla ocupação, da energia interna e do calor especifico como função da temperatura, da interação Colombiana local e não local. Além disso, diversas quantidades físicas (dupla ocupação, energia interna,calor especifico, entropia, magnetização e susceptibilidade magnética) do dímero de Mott foram calculadas analiticamente utilizando o método do ensemble canônico. / Compounds based on transition metals such as vanadium dioxide (VO2), present under certain conditions metal-insulator transitions. Regarding to VO2, this transition is accompanied by a change in its cristalline structure through dimerization of two vanadium atoms on di erent sites. Here, it is this bound state between two vanadium atoms that emerges the idea of a Mott's dimer. In this work, using exact diagonalization, we study the Hubbard model in its extended version exploring the physics of Mott's dimer. We obtain explicitly all eigenvalues and eigenvectors of this model. Varying the model parameters, we explore the energy dependence of all eigenvalues of the system. We also performed an analysis of the total electron occupation and the charge compressibility (density of states) as a function of chemical potential. In order to better understand the physical properties of a two-site Hubbard model, we study the behavior of the double occupancy, the total energy and the speci c heat as a function of temperature and the Coulomb interaction parameters. Moreover, various physical quantities (double occupancy, internal energy, speci c heat, entropy, magnetization and magnetic susceptibility) of dimer's Mott were calculated analytically using the method of the canonical ensemble.

Cette thèse concerne l’étude de l’effet du dopage au chrome sur les propriétés structurales, électriques et optiques des films de dioxyde de vanadium. Ces films V(1-x)CrxO2 (x allant de 0 à 25%) de 110 nm d’épaisseur ont été déposés par dépôt par ablation laser (PLD) multicibles sur substrat saphir c. Ils ont été caractérisés grâce à des techniques d’analyse morphologique, structurale, électrique et optique. Les différentes phases présentes dans les films V(1-x)CrxO2 ont été identifiées par DRX, spectroscopie Raman et comparées au diagramme de phase du matériau massif. Les phases M1, M2 et M3, un mélange M2 + M3 et la phase R ont été identifiées. En revanche la phase M4 n’a pas été détectée pour des dopages supérieurs à 8%, montrant une réelle différence entre diagrammes de phase du matériau massif et des films. Le dopage au chrome a permis d’augmenter la température de transition isolant-métal de 68 à 102°C. En revanche, la dynamique de cette transition, déterminée par mesure de transmission optique ou par mesure de résistivité électrique, est souvent diminuée. Enfin, des dispositifs à deux terminaux à base de films V(1-x)CrxO2 ont été réalisés. Leurs caractérisations courant-tension montrent que le dopage au chrome influence fortement le seuil d’activation de la transition entre les états isolant et métallique. / This thesis presents a study of the effect of chromium doping on structural, electrical and optical properties of thin films of vanadium dioxide. These V(1-x)CrxO2 thin films (x from 0 to 25%) of 110 nm thick have been deposited on c sapphire substrate by multi target Pulsed Laser Deposition method. Their morphological, structural, electrical and optical properties have been studied. Different phases for V(1-x)CrxO2 have been identified by XRD and Raman analysis and compared to those of bulk material. M1, M2, M3, a mixture M2 + M3 and R phases are present. The M4 phase has not been detected for doping above 8%, showing a real difference between phase diagram of bulk and thin films. Chromium doping also increases the metal-insulator transition temperature from 68°C to 102°C. Moreover, the transition dynamics, determined using optical transmission and electrical resistivity measurements, decreases. Finally, two terminal switches based on V(1-x)CrxO2 thin films have been fabricated. Their current-voltage characterization showed that chromium doping affects the activation threshold voltage of the metal to insulator transition.

Plazmonika, tedy vědní obor zabývající se interakcí světla s kovovými materiály, nabízí ve spojení s nanotechnologiemi nezvyklé možnosti, jak světlo ovládat a využívat. Výsledkem tohoto spojení může být například zaostřování světla pod difrakční limit, zesilování emise nebo absorbce kvantových zářičů, či extrémně citlivá detekce molekul. Tato práce se zabývá zejména možnostmi využití plazmoniky pro vývoj plošných optických prvků, tzv. metapovrchů, a pro fotokatalytické aplikace založené na plazmonicky generovaných elektronech s vysokou energií, tzv. horkých elektronech. Nejprve jsou vysvětleny teoretické základy plazmoniky a je poskytnut přehled jejích nejvýznamnějších aplikací. Poté jsou představeny tři studie zabývající se využitím plazmonických nanostruktur pro ovládání fáze a polarizace světla, pro vytváření dynamicky laditelných metapovrchů, a pro foto-elektrochemii s horkými elektrony. Společným prvkem těchto studií je pak používání pokročilých, resp. v rámci těchto oblastí netradičních, materiálů, jako např. oxidu vanadičitého nebo dichalkogenidů přechodných kovů.

Crystalline films of vanadium dioxide were obtained through thermal annealing of amorphous vanadium dioxide thin films sputtered on silicon dioxide. An annealing process was found that yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. Orientation Imaging Microscopy (OIM) was used to characterize and study the phase and the orientation of the vanadium dioxide crystals obtained, as well as to diferentiate them from other vanadium oxide stoichiometries that may have formed during the annealing process. There was no evidence of any other vanadium oxides present in the prepared samples. Indexing of the crystals for the orientation study was performed with the Kikuchi patterns for the tetragonal phase of vanadium dioxide, since it was observed that the Kikuchi patterns for the monoclinic and tetragonal phases of vanadium dioxide are indistinguishable by OIM. It was found that a particle size of 100 nm was in the lower limit of particles that could be reliably characterized with this technique. It was also found that all VO2 crystals large enough to be indexed by OIM had a preferred orientation with the C axis of the tetragonal phase parallel to the plane of the specimen.

No description available.

El silicio es la plataforma más prometedora para la integración fotónica, asegurando la compatibilidad con los procesos de fabricación CMOS y la producción en masa de dispositivos a bajo coste. Durante las últimas décadas, la tecnología fotónica basada en la plataforma de silicio ha mostrado un gran crecimiento, desarrollando diferentes tipos de dispositivos ópticos de alto rendimiento. Una de las posibilidades para continuar mejorando las prestaciones de los dispositivos fotónicos es mediante la combinación con otras tecnologías como la plasmónica o con nuevos materiales con propiedades excepcionales y compatibilidad CMOS. Las tecnologías híbridas pueden superar las limitaciones de la tecnología de silicio, dando lugar a nuevos dispositivos capaces de superar las prestaciones de sus homólogos electrónicos. La tecnología híbrida dióxido de vanadio/ silicio permite el desarrollo de dispositivos de altas prestaciones, con gran ancho de banda, mayor velocidad de operación y mayor eficiencia energética con dimensiones de la escala de la longitud de onda. El objetivo principal de esta tesis ha sido la propuesta y desarrollo de dispositivos fotónicos de altas prestaciones para aplicaciones de conmutación. En este contexto, diferentes estructuras basadas en silicio, tecnología plasmónica y las propiedades sintonizables del dióxido de vanadio han sido investigadas para controlar la polarización de la luz y para desarrollar otras funcionalidades electro-ópticas como la modulación. / Silicon is the most promising platform for photonic integration, ensuring CMOS fabrication compatibility and mass production of cost-effective devices. During the last decades, photonic technology based on the Silicon on Insulator (SOI) platform has shown a great evolution, developing different sorts of high performance optical devices. One way to continue improving the performance of photonic optical devices is the combination of the silicon platform with another technologies like plasmonics or CMOS compatible materials with unique properties. Hybrid technologies can overcome the current limits of the silicon technology and develop new devices exceeding the performance metrics of its counterparts electronic devices. The vanadium dioxide/silicon hybrid technology allows the development of new high-performance devices with broadband performance, faster operating speed and energy efficient optical response with wavelength-scale device dimensions. The main goal of this thesis has been the proposal and development of high performance photonic devices for switching applications. In this context, different structures, based on silicon, plasmonics and the tunable properties of vanadium dioxide, have been investigated to control the polarization of light and for enabling other electro-optical functionalities, like optical modulation. / El silici és la plataforma més prometedora per a la integració fotònica, assegurant la compatibilitat amb els processos de fabricació CMOS i la producció en massa de dispositius a baix cost. Durant les últimes dècades, la tecnologia fotònica basada en la plataforma de silici ha mostrat un gran creixement, desenvolupant diferents tipus de dispositius òptics d'alt rendiment. Una de les possibilitats per a continuar millorant el rendiment dels dispositius fotònics és per mitjà de la combinació amb altres tecnologies com la plasmònica o amb nous materials amb propietats excepcionals i compatibilitat CMOS. Les tecnologies híbrides poden superar les limitacions de la tecnologia de silici, donant lloc a nous dispositius capaços de superar el rendiment dels seus homòlegs electrònics. La tecnologia híbrida diòxid de vanadi/silici permet el desenvolupament de dispositius d'alt rendiment, amb gran ample de banda, major velocitat d'operació i major eficiència energètica en l'escala de la longitud d'ona. L'objectiu principal d'esta tesi ha sigut la proposta i desenvolupament de dispositius fotònics d'alt rendiment per a aplicacions de commutació. En este context, diferents estructures basades en silici, tecnologia plasmònica i les propietats sintonitzables del diòxid de vanadi han sigut investigades per a controlar la polarització de la llum i per a desenvolupar altres funcionalitats electró-òptiques com la modulació. / Sánchez Diana, LD. (2016). High performance photonic devices for switching applications in silicon photonics [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/77150