This thesis addresses the problem of constructing a flawless subarray from a defective VLSI/WSI array consists of identical cells such as memory cells or processors. In contrast to the redundancy approach in which some cells are dedicated as spares, all the cells in the degradation approach are treated in a uniform way. Each cell can be either fault-free or defective and a subarray which contains no faulty cell is derived under constraints of switching and routing mechanisms. Although extensive literatures exist concerning spare allocation and reconfiguration in arrays with redundancy, little research has been published on optimal reconfiguration in a degradable array. A systematic method based on graph theoretic models is developed to deal with the problem. The complexities of reconfiguration are analyzed for schemes using different switching mechanisms. Efficient heuristic algorithms are presented to determine a target subarray from the defective host array.

Based on ethanol fermentation kinetics and bioreactor engineering theory, a system composed of a continuously stirred tank reactor (CSTR) and three tubular bioreactors in series was established for continuous very high gravity (VHG) ethanol fermentation with Saccharomyces cerevisiae. Sustainable oscillations of residual glucose, ethanol, and biomass characterized by long oscillation periods and large oscillation amplitudes were observed when a VHG medium containing 280 g/L glucose was fed into the CSTR at a dilution rate of 0.027 h???1. Mechanistic analysis indicated that the oscillations are due to ethanol inhibition and the lag response of yeast cells to ethanol inhibition. A high gravity (HG) medium containing 200 g/L glucose and a low gravity (LG) medium containing 120 g/L glucose were fed into the CSTR at the same dilution rate as that for the VHG medium, so that the impact of residual glucose and ethanol concentrations on the oscillations could be studied. The oscillations were not significantly affected when the HG medium was used, and residual glucose decreased significantly, but ethanol maintained at the same level, indicating that residual glucose was not the main factor triggering the oscillations. However, the oscillations disappeared after the LG medium was fed and ethanol concentration decreased to 58.2 g/L. Furthermore, when the LG medium was supplemented with 30 g/L ethanol to achieve the same level of ethanol in the fermentation system as that achieved under the HG condition, the steady state observed for the original LG medium was interrupted, and the oscillations observed under the HG condition occurred. The steady state was gradually restored after the original LG medium replaced the modified one. These experimental results confirmed that ethanol, whether produced by yeast cells during fermentation or externally added into a fermentation system, can trigger oscillations once its concentration approaches to a criterion. The impact of dilution rate on oscillations was also studied. It was found that oscillations occurred at certain dilution rate ranges for the two yeast strains. Since ethanol production is tightly coupled with yeast cell growth, it was speculated that the impact of the dilution rate on the oscillations is due to the synchronization of the mother and daughter cell growth rhythms. The difference in the oscillation profiles exhibited by the two yeast strains is due to their difference in ethanol tolerance. For more practical conditions, the behavior of continuous ethanol fermentation was studied using a self-flocculating industrial yeast strain and corn flour hydrolysate medium in a simulated tanks-in-series fermentation system. Amplified oscillations observed at the dilution rate of 0.12 h???1 were postulated to be due to the synchronization of the two yeast cell populations generated by the continuous inoculation from the seed tank upstream of the fermentation system, which was partly validated by oscillation attenuation after the seed tank was removed from the fermentation system. The two populations consisted of the newly inoculated yeast cells and the yeast cells already adapted to the fermentation environment. Oscillations increased residual sugar at the end of the fermentation, and correspondingly, decreased the ethanol yield, indicating the need for attenuation strategies. When the tubular bioreactors were packed with ????? Intalox ceramic saddles, not only was their ethanol fermentation performance improved, but effective oscillation attenuation was also achieved. The oscillation attenuation was postulated to be due to the alleviation of backmixing in the packed tubular bioreactors as well as the yeast cell immobilization role of the packing. The residence time distribution analysis indicated that the mixing performance of the packed tubular bioreactors was close to a CSTR model for both residual glucose and ethanol, and the assumed backmixing alleviation could not be achieved. The impact of yeast cell immobilization was further studied using several different packing materials. Improvement in ethanol fermentation performance as well as oscillation attenuation was achieved for the wood chips, as well as the Intalox ceramic saddles, but not for the porous polyurethane particles, nor the steel Raschig rings. Analysis for the immobilized yeast cells indicated that high viability was the mechanistic reason for the improvement of the ethanol fermentation performance as well as the attenuation of the oscillations. A dynamic model was developed by incorporating the lag response of yeast cells to ethanol inhibition into the pseudo-steady state kinetic model, and dynamic simulation was performed, with good results. This not only provides a basis for developing process intervention strategies to minimize oscillations, but also theoretically support the mechanistic hypothesis for the oscillations.

This paper outlines the details of seven case studies involving the pilot usage of the new standard ISO/IEC 29110standard ‘Lifecycle Profiles for Very Small Entities’, which was specifically designed by Working Group 24 of ISO/IEC JTC1/SC7 to address the standardization needs of Very Small Entities (VSEs). The purpose of this paper is to add substantially to the body of knowledge and the literature on the rollout and implementation of this new and evolving standard and to act as guidance for other researchers in the design and implementation of ISO/IEC 29110 case studies. Furthermore it is hoped that that the lessons learnt from these case studies will help promote the adoption of this new standard in an industrial setting.

Advances in microlithography, dry etching, scaling of devices, ion-implantation, process control, and computer aid design brought the integrated circuit technology into the era of VLSI circuits. Those circuits are characterized by high packing density, improved performance, complex circuits, and large chip sizes. Interconnects and their spacing dominate the chip area of VLSI circuits and they degrade the circuit performance through the unacceptable high time delays. Multilayer metallization enables shorter interconnects, ease of design and yet higher packing density for VLSI circuits. It was shown in this dissertation that, tungsten films deposited in a cold-wall LPCVD reactor offer viable solution to the problems of VLSI multilayer interconnects. Experiments showed that LPCVD tungsten films have good uniformity, high purity, low resistivity, low stress-good adherence and are readily patterned into high resolution lines. Moreover, a multilayer interconnect system consisting of three layers of tungsten metallization followed by a fourth layer of aluminum metallization has been designed, fabricated and tested. The interlevel dielectric used to separate the metal layers was CVD phosphorus doped silicon dioxide. Low ohmic contacts were achieved for heavily doped silicon. Also, low resistance tungsten-tungsten intermetallic contacts were obtained. In addition to excellent step coverage, high electromigration resistance of interconnects was realized. Finally, CMOS devices and logic gates were successfully fabricated and tested using tungsten multilayer metallization schemes.

As the ever-advancing fabrication technologies in semiconductor industry enable the VLSI circuits with increasing integration and decreasing cost, the circuits suffer from much severer Signal Integrity (SI) faults, where SI is the capability of signals generating correct responses in their downstream circuits. SI faults are complex problems to tackle since SI may be damaged by numerous kinds of causes and SI faults may impact multiple aspects of circuits' performance. Such SI problems can seriously reduce product yield, result in function error or even permanently damage the chip. Therefore, effective testing methodologies are essential to alleviate SI problems by verifying the SI satisfaction of VLSI circuits efficiently. / Hereby the thesis has examined the SI problems systematically and proposed effective test methods corresponding to the specific feature of SI faults. Firstly, considering that SI on inter-core interconnects of SOCs is under severe danger, new test wrapper design has been proposed to achieve accurate SI test on interconnects. Secondly, test architecture has been optimized for cost reduction considering SI test and logic test simultaneously. Thirdly, the impact of power distribution network (PDN) defects on SI has been analyzed and efficient computation method has been proposed to identify those potentially harmful PDN defects. Effective test pattern manipulation method has also been proposed to improve test coverage of PDN defects. Fourthly, considering the increasing impact of process variation and aging effect on SI, an innovative online test architecture has been proposed, which can accurately measure the delay of critical paths when the circuit is working in function mode, where such valuable information is of great help for a variety of applications. / Zhang, Yubin. / Adviser: Qiang Xu. / Source: Dissertation Abstracts International, Volume: 73-06, Section: B, page: . / Thesis (Ph.D.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 121-133). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [201-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract also in Chinese.

by Man-chung Suen. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references (leaves [123]-[126]). / Acknowledgement --- p.ii / Abstract --- p.iii / List of Tables --- p.vii / List of Figures --- p.xii / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Approach to Find the Equivalent Models --- p.5 / Chapter 2.1 --- Scattering Parameters of the Microstrip Structure --- p.5 / Chapter 2.2 --- Optimization Process --- p.7 / Chapter 2.3 --- Summary --- p.8 / Chapter 3 --- Microstrip Discontinuities Being Modelled --- p.9 / Chapter 3.1 --- Right-Angled Bend --- p.9 / Chapter 3.2 --- T-Junction --- p.10 / Chapter 3.3 --- Tapered Line --- p.10 / Chapter 4 --- Deficiency of Lumped Equivalent Circuits --- p.13 / Chapter 4.1 --- Scattering Parameter of the T-Network --- p.13 / Chapter 4.2 --- Optimization Result for the T-Network --- p.14 / Chapter 4.3 --- Summary --- p.15 / Chapter 5 --- Proposed Wideband Equivalent Circuits --- p.17 / Chapter 5.1 --- Model of a Uniform Non-Homogeneous Microstrip Line --- p.17 / Chapter 5.2 --- Right-Angled Bend --- p.22 / Chapter 5.2.1 --- Circuit 1L --- p.24 / Chapter 5.2.2 --- Circuit 2L --- p.25 / Chapter 5.2.3 --- Circuit 3L --- p.26 / Chapter 5.2.4 --- Circuit 4L --- p.27 / Chapter 5.3 --- T-Junction --- p.28 / Chapter 5.3.1 --- Circuit IT --- p.28 / Chapter 5.3.2 --- Circuit 2T --- p.31 / Chapter 5.3.3 --- Circuit 3T --- p.31 / Chapter 5.3.4 --- Circuit 4T --- p.34 / Chapter 5.4 --- Tapered Line --- p.36 / Chapter 5.4.1 --- Circuit It -n =3 --- p.37 / Chapter 5.5 --- Summary --- p.38 / Chapter 6 --- Performance of the Equivalent Circuits --- p.39 / Chapter 6.1 --- Right-Angled Bend --- p.40 / Chapter 6.1.1 --- Without Conductor Loss --- p.40 / Chapter 6.1.2 --- With Conductor Loss --- p.48 / Chapter 6.2 --- T-Junction --- p.49 / Chapter 6.2.1 --- Without Conductor Loss --- p.53 / Chapter 6.2.2 --- With Conductor Loss --- p.63 / Chapter 6.3 --- Tapered Line --- p.69 / Chapter 6.3.1 --- Without Conductor Loss --- p.69 / Chapter 6.3.2 --- With Conductor Loss --- p.72 / Chapter 6.4 --- Summary --- p.73 / Chapter 7 --- Modelling Performance Using TEM Approximation --- p.77 / Chapter 7.1 --- Right-Angled Bend --- p.77 / Chapter 7.1.1 --- Without Conductor Loss --- p.78 / Chapter 7.1.2 --- With Conductor Loss --- p.87 / Chapter 7.2 --- T-Junction --- p.92 / Chapter 7.2.1 --- Without Conductor Loss --- p.92 / Chapter 7.2.2 --- With Conductor Loss --- p.104 / Chapter 7.3 --- Tapered Line --- p.115 / Chapter 7.3.1 --- Without Conductor Loss --- p.116 / Chapter 7.3.2 --- With Conductor Loss --- p.117 / Chapter 7.4 --- Summary --- p.117 / Chapter 8 --- Conclusion --- p.120 / Bibliography --- p.123

by Tsz Shing Cheung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1990. / Includes bibliographical references. / Chapter Section 1 --- Introduction --- p.2 / Chapter 1.1 --- The Affinity Clustering Phase --- p.2 / Chapter 1.2 --- The Alteration Phase --- p.3 / Chapter 1.3 --- Floorplan of Macrocell Array --- p.3 / Chapter 1.4 --- Chip Model --- p.4 / Chapter 1.4.1 --- Location Representation --- p.4 / Chapter 1.4.2 --- Interconnection Length Estimation --- p.6 / Chapter 1.5 --- Cost Function Evaluation --- p.6 / Chapter 1.5.1 --- Net-length Calculation --- p.6 / Chapter 1.5.2 --- Net-length Estimated by Half of the Perimeter of Bounding Box --- p.7 / Chapter 1.6 --- Thesis Layout --- p.8 / Chapter Section 2 --- Reviews of Partitioning and Placement Methods --- p.9 / Chapter 2.1 --- Partitioning Methods --- p.9 / Chapter 2.1.1 --- Direct Method --- p.10 / Chapter 2.1.2 --- Group Migration Method --- p.10 / Chapter 2.1.3 --- Metric Allocation Methods --- p.10 / Chapter 2.1.4 --- Simulated Annealing --- p.11 / Chapter 2.2 --- Placement Methods --- p.12 / Chapter 2.2.1 --- Min-cut Methods --- p.13 / Chapter 2.2.2 --- Affinity Clustering Methods --- p.13 / Chapter 2.2.3 --- Other Placement Methods --- p.16 / Chapter Section 3 --- Algorithm --- p.17 / Chapter 3.1 --- The Affinity Clustering Phase --- p.18 / Chapter 3.1.1 --- Construction of Connection Lists --- p.18 / Chapter 3.1.2 --- Primary Grouping --- p.21 / Chapter 3.1.3 --- Element Appendage to Existing Groups --- p.23 / Chapter 3.1.4 --- Loose Appendage of Ungrouped Elements --- p.25 / Chapter 3.1.5 --- Single Element Groups Formation --- p.26 / Chapter 3.2 --- The Alteration Phase --- p.27 / Chapter 3.2.1 --- Element Assignment to a Group --- p.29 / Chapter 3.2.2 --- Empty Space Searching --- p.30 / Chapter 3.2.3 --- Determination of Direction of Element Allocation --- p.31 / Chapter 3.2.3.1 --- Cross-cut Direction of Allocation --- p.32 / Chapter 3.2.3.2 --- Dynamic Determination of Path Based on Size Functions --- p.34 / Chapter 3.2.3.2.1 --- Segmentation of Cross-cut --- p.35 / Chapter 3.2.3.2.2 --- Partial Optimization of Segments --- p.36 / Chapter 3.2.3.2.3 --- Dynamic Linking of Segments --- p.38 / Chapter 3.2.4 --- Element Allocation --- p.39 / Chapter Section 4 --- Implementation --- p.41 / Chapter 4.1 --- The System Row --- p.41 / Chapter 4.1.1 --- The Affinity Clustering Phase --- p.43 / Chapter 4.1.2 --- The Alteration Phase --- p.44 / Chapter 4.2 --- Data Structures --- p.47 / Chapter 4.2.1 --- Insertion of Elements to a Linked List --- p.54 / Chapter 4.2.2 --- Dynamic Linking of Segments --- p.56 / Chapter 4.2.3 --- Advantages of the Dynamic Data Structure --- p.59 / Chapter 4.3 --- Data Manipulation and File Management --- p.60 / Chapter 4.3.1 --- The Connection Lists and the Group List --- p.60 / Chapter 4.3.2 --- Description on Programs and Data Files --- p.62 / Chapter 4.3.2.1 --- The Affinity Clustering Phase --- p.63 / Chapter 4.3.2.2 --- The Alteration Phase --- p.64 / Chapter Section 5 --- Results --- p.70 / Chapter 5.1 --- Results on Affinity Clustering Phase --- p.84 / Chapter 5.2 --- Details of Affinity Clustering Procedure on Ckt. 2 and Ckt. 5 --- p.92 / Chapter 5.3 --- Results on Alteration Phase --- p.97 / Chapter 5.4 --- Details of Alteration Procedure on Ckt. 2 and Ckt. 5 --- p.101 / Chapter Section 6 --- Discussion --- p.107 / Chapter 6.1 --- Computation Time of the Algorithm --- p.107 / Chapter 6.2 --- Alternative Methods on the Determination of Propagation Path --- p.110 / Chapter 6.2.1 --- Method 1 --- p.110 / Chapter 6.2.2 --- Method 2 --- p.111 / Chapter 6.2.3 --- Method 3 --- p.114 / Chapter 6.2.4 --- Comparison on Execution Time of the Four Methods --- p.117 / Chapter 6.3 --- Wiring Optimization --- p.118 / Chapter 6.3.1 --- Data Structure --- p.119 / Chapter 6.3.2 --- Overlapping and Separate Bounding Boxes --- p.120 / Chapter 6.4 --- Generalization of the Data Structure --- p.122 / Chapter 6.4.1 --- Cell Types --- p.123 / Chapter 6.4.2 --- Adhesive Attributes --- p.124 / Chapter 6.4.3 --- Blocks Representation --- p.124 / Chapter 6.4.4 --- Critical Path Adjustment --- p.125 / Chapter 6.4.5 --- Total Interconnection Length Estimation --- p.129 / Chapter 6.5 --- A New Placement Algorithm --- p.130 / Chapter 6.6 --- An Alternative Method on Element Allocation --- p.132 / Chapter Section 7 --- Conclusion --- p.136 / Chapter Section 8 --- References --- p.138 / Chapter Section 9 --- Appendix I --- p.142 / Chapter 9.1 --- Definition of the Problem --- p.142 / Chapter 9.2 --- The Simulated Annealing Algorithm --- p.142 / Chapter 9.3 --- Example Circuit --- p.143 / Chapter 9.4 --- Performance Indices and Energy Value --- p.144 / Chapter 9.4.1 --- Total Interconnection Length --- p.144 / Chapter 9.4.2 --- Delay on Critical Paths --- p.144 / Chapter 9.4.3 --- Skew in Input-to-Output Delays --- p.146 / Chapter 9.4.4 --- Energy Value --- p.146 / Chapter 9.5 --- The Simulation Program --- p.146 / Chapter 9.5.1 --- "The ""function"" Subroutines" --- p.147 / Chapter 9.5.1.1 --- alise --- p.147 / Chapter 9.5.1.2 --- max delay --- p.147 / Chapter 9.5.1.3 --- replace --- p.147 / Chapter 9.5.1.4 --- total length --- p.147 / Chapter 9.5.2 --- "The ""procedure"" Subroutines" --- p.148 / Chapter 9.5.2.1 --- init_weight --- p.148 / Chapter 9.5.2.2 --- inverse --- p.148 / Chapter 9.5.2.3 --- initial --- p.148 / Chapter 9.5.2.4 --- shuffle --- p.148 / Chapter 9.5.3 --- The Main Program --- p.148 / Chapter 9.6 --- Results and Discussion --- p.149 / Chapter 9.7 --- Summary --- p.156 / Chapter 9.8 --- References --- p.156 / Chapter Section 10 --- Appendix II --- p.157

by Chan Lap-kong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references (leaves 77-80). / ABSTRACT / ACKNOWLEDGEMENTS / LIST OF FIGURES / Chapter 1. --- INTRODUCTION --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Problems in Testing VLSI Circuits --- p.3 / Chapter 1.2.1 --- Test-cost-per-gate --- p.3 / Chapter 1.2.2 --- Tester Complexity --- p.3 / Chapter 1.3 --- Tester Based on Terminals Characteristics -Automatic Testing Equipment(ATE) --- p.4 / Chapter 1.4 --- Tester Based on Terminal and Internal Characteristics --- p.6 / Chapter 1.4.1 --- Mechanical Probing Method --- p.6 / Chapter 1.4.2 --- E-beam Probing Method --- p.7 / Chapter 1.5 --- Movitation for this Research --- p.7 / Chapter 1.6 --- Outline of the Remaining Chapters --- p.9 / Chapter 2. --- E-BEAM TESTER --- p.10 / Chapter 2.1 --- State-of-art of E-Beam Tester --- p.10 / Chapter 2.2 --- An Electron-optical Column of a SEM --- p.12 / Chapter 2.3 --- Beam Rastering Methods --- p.13 / Chapter 2.4 --- Voltage Contrast Phenomenon --- p.14 / Chapter 2.5 --- Configuration of an E-Beam Test System --- p.18 / Chapter 2.6 --- Advantages of an E-beam Tester --- p.20 / Chapter 3. --- BASIC PRINCIPLES --- p.21 / Chapter 3.1 --- Single-Stuck-At Fault Model --- p.21 / Chapter 3.2 --- Observability and Controllability --- p.24 / Chapter 3.3 --- Netlist Format --- p.25 / Chapter 3.4 --- Level --- p.27 / Chapter 3.5 --- Reconvergent Fanout --- p.28 / Chapter 4. --- CONVENTIONAL TEST GENERATION --- p.29 / Chapter 4.1 --- Conventional Automatic Test Generation for ATEs --- p.29 / Chapter 4.3 --- Conventional E-Beam Test Generation --- p.31 / Chapter 5. --- TEST AND PROBE POINT GENERATION --- p.32 / Chapter 5.1 --- Wafer Stage E-beam Testing --- p.32 / Chapter 5.2 --- Critical Paths Generation --- p.33 / Chapter 5.3 --- Assumptions of the Test and Probe Point Generation Algorithm --- p.35 / Chapter 5.4 --- Rules of the Test and Probe Point Generation Algorithm --- p.36 / Chapter 5.5 --- Probe Points Selection and Reduction --- p.38 / Chapter 5.6 --- Test and Probe Point Generation Algorithm --- p.40 / Chapter 5.7 --- Propagation and Justification at Fanout Site --- p.42 / Chapter 6. --- EXAMPLES --- p.45 / Chapter 6.1 --- Example of Test and Probe Point Generation for Circuit sc2 --- p.45 / Chapter 6.2 --- Example of Test and Probe Point Generation for Circuit sfc4 --- p.53 / Chapter 7. --- CONCLUSIONS --- p.61 / Chapter 7.1 --- Summary of Results --- p.61 / Chapter 7.2 --- Further Research --- p.63 / APPENDIX / Appendix A: Algorithm to Find Reconvergent Fanouts / Appendix B: Results of Test Generation for Circuit sc1 / Appendix C: Results of Test Generation for Circuit sc3 / REFERENCES --- p.77

by Wai-Hung Leung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references (leaves 73-75). / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Wavelet Theory --- p.5 / Chapter 2-1 --- Basic Wavelet Theories --- p.5 / Chapter 2-2 --- Example of Haar Wavelet Base --- p.6 / Chapter 2-3 --- Wavelet Decomposition and Reconstruction with Multiresolution Analysis --- p.12 / Chapter 2-4 --- Conditions for the Effective Filter Bank and the Constructions of the Filter Coefficients --- p.17 / Chapter 2-5 --- Comparison between Wavelet Analysis and Fourier Analysis --- p.20 / Chapter 3 --- Waveform Relaxation Analysis of Distributed Network --- p.25 / Chapter 3-1 --- Introduction --- p.25 / Chapter 3-2 --- Method of Characteristics for the Simulation of Transmission Lines --- p.27 / Chapter 3-3 --- Waveform Relaxation Algorithm --- p.30 / Chapter 3-4 --- Pade Synthesis of Lossy Characteristic Impedance --- p.33 / Chapter 4 --- Application of FFT on the Transient Simulation of Distributed Network --- p.39 / Chapter 4-1 --- Simulation of Wave Propagation in Lossy Transmission Line with FFT --- p.39 / Chapter 4-2 --- Some Special Properties of the Wave Propagation Function of Lossy Transmission Lines --- p.44 / Chapter 5 --- Wavelet-based Convolution --- p.49 / Chapter 5-1 --- Introduction --- p.49 / Chapter 5-2 --- Application of Wavelet-based Convolution on the Simulation of Wave Propagation Function and Waveform Transformation --- p.58 / Chapter 6 --- Experimental Results of using Wavelet- based Convolution on the Transient Simulation of Lossy Transmission Lines --- p.64 / Chapter 7 --- Conclusions and Prospective Studies --- p.71 / Chapter 8 --- References --- p.73 / Appendix Program Lists --- p.76

Ku Man-Ho. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references (leaves 86-87). / Chapter 1. --- Introduction / Chapter 1.1. --- Introduction --- p.1 / Chapter 1.2. --- Power Noise --- p.2 / Chapter 1.3. --- High Speed Output Driver Design --- p.3 / Chapter 2. --- Power Bus Noise Analysis / Chapter 2.1. --- Introduction --- p.7 / Chapter 2.2. --- The Power bus model of a packed VLSI chip --- p.7 / Chapter 2.3. --- The effects of bonding wire on Power bus --- p.11 / Chapter 2.4. --- Noise analysis of multi-driver switching --- p.15 / Chapter 3. --- Effects of Power bus noise / Chapter 3.1. --- Introdcution --- p.22 / Chapter 3.2. --- Digital noise definition --- p.22 / Chapter 3.3. --- Static CMOS Inverter --- p.23 / Chapter 3.4. --- Dynamic gate --- p.32 / Chapter 4. --- Output Driver Design / Chapter 4.1. --- Introduction --- p.37 / Chapter 4.2. --- Optimum Discharge Current Waveform --- p.37 / Chapter 4.3. --- Simple Inverter Output driver --- p.40 / Chapter 4.4. --- Weighted and Distributed Driver --- p.42 / Chapter 4.5. --- Short circuit current prevention circuit --- p.50 / Chapter 5.6. --- Adaptive output driver --- p.52 / Chapter 5. --- Test chip Implementation / Chapter 5.1. --- Introduction --- p.57 / Chapter 5.2. --- Output Driver Circuit Design --- p.57 / Chapter 5.3. --- Simulation Results --- p.62 / Chapter 5.4. --- Test chip circuit --- p.65 / Chapter 5.5. --- Physical design --- p.67 / Chapter 6. --- Test Chip evaluation / Chapter 6.1. --- Introduction --- p.75 / Chapter 6.2. --- Rise time and overshoot Test --- p.76 / Chapter 6.3. --- Switching noise --- p.79 / Chapter 6.4. --- Driving Test --- p.82 / Chapter 7. --- Conslusions --- p.84 / Chapter 8. --- References --- p.86 / Chapter 9. --- Appendix A --- p.88 / Chapter 10. --- Appendix B --- p.91 / Chapter 11. --- Appendix C --- p.100 / Chapter 12. --- Appendix D --- p.101 / Chapter 13. --- Appendix E --- p.102