Three high performance circuits for a low power supply DRAM¡¦s are presented in this thesis. First, a modified multi-stage sense amplifier is proposed, that utilizes the auxiliary transmission gate and charge recycling technique. The auxiliary NMOS transistor of the multi-stage sense amplifier is replaced by the transmission gate to improve the sensing speed. In addition, the charge recycling technique is used to reduce the power dissipation of multi-stage sense amplifier. It improves the sensing time by 6.1ns (24.4%) compared to that of the conventional multi-stage sense amplifier and the power saving percentage of 25.6% compared to that of the conventional one. Second, an improved Standby Power Reduction (SPR) Circuit is reported. The capacitor boosting technique is utilized in our proposed Static Current Cut-off Standby Power Reduction (SCCSPR) Circuit, which turns off the always-on MOS transistor of SPR circuit. The power consumption is 30.9% reduced by our design compared to that of the conventional SPR circuit. Third, an improved voltage doubler is developed. The indirect switch is utilized in our proposed circuit, it provides larger gate source bias applied to the PMOS pass transistor. Thus, the current drivability is arisen and the pumping speed is improved as well. In the 2V supply voltage, the pumping speed of our modified voltage doubler is arisen about 18.6% compared to that of the conventional voltage doubler. These high performance circuits in this thesis are applied in a 1-Kbit DRAM circuits. A data access time of 36ns and total power consumption 52.58mW are attained when the supply voltage is 2V. The access time of 10.3ns (22.2%) and power consumption of 6.44mW (11%) are reduced compared to that of the conventional DRAM.

Implantable biomedical wireless sensors provide monitoring of vital health signs such as oxygen, temperature and intraocular pressure and may help to analyse and detect diseases in humans and animals. However, one of the design challenges of implantable devices is providing a safe and reliable energy source. Replaceable batteries are one of the most common methods for powering up implantable devices and have been used in e.g.cardiac pacemakers for decades. However, the need for a regular battery replacement may require surgical incisions. Multiple studies have been done on energy harvesting from ambient energy sources to provide the required power for the operation of the implantable sensor and thus reducing the need for battery replacement. In this work, a circuit-level radio frequency (RF) energy harvesting system has been designed and simulated in 65 nm CMOS process technology. The system consists of an AC-DC converter, a DC-DC converter, a Ring oscillator, a Buffer, and a Voltage sensor with comparators, dividers and a reference generator. The rectifier operates at a frequency of 900 MHz and offers a power conversion efficiency (PCE) of 71%. The doubler works at 50 MHz with a voltage conversion efficiency (VCE) of 98%. Additionally, the Voltage sensor monitors the voltage level of the energy-storing unit, that in this project is intended to be an mm-size rechargeable battery. If the voltage level is equal to or higher than a threshold value, Vref, the harvesting system will be in discharging mode. Similarly, if the voltage level is below Vref, then the system will be in charging mode.

<p>Designing an application specific integrated circuit (ASIC) must be starting with careful preparations, otherwise the chip will not be as good as possible. The theoretical studies must cover everything from the chip circuits to the application structure. In mobile applications there is extremely important that the current consumption becomes minimized because the battery power is limited. The power reductions studies must include the most power costing circuits on the chip. When the whole circuit or segments of the circuit is not in use, they must switch fast and simple into another mode that consume nearly none power. This mode is called sleep-mode. If the sleep-mode has very low leakage currents, the lifetime of the application will dramatically increase. </p><p>This report studies the most power costing circuits in smartcard application ASIC. The chip should be used to control a LCD display on the smartcard. The circuits that have been investigated are level shifters, charge pumps and LCD drivers, also sleep-mode configuration possibilities have been investigated. Other small preparing work is also included in the thesis.</p>

Designing an application specific integrated circuit (ASIC) must be starting with careful preparations, otherwise the chip will not be as good as possible. The theoretical studies must cover everything from the chip circuits to the application structure. In mobile applications there is extremely important that the current consumption becomes minimized because the battery power is limited. The power reductions studies must include the most power costing circuits on the chip. When the whole circuit or segments of the circuit is not in use, they must switch fast and simple into another mode that consume nearly none power. This mode is called sleep-mode. If the sleep-mode has very low leakage currents, the lifetime of the application will dramatically increase. This report studies the most power costing circuits in smartcard application ASIC. The chip should be used to control a LCD display on the smartcard. The circuits that have been investigated are level shifters, charge pumps and LCD drivers, also sleep-mode configuration possibilities have been investigated. Other small preparing work is also included in the thesis.

On-chip impedance tuning is used to overcome IC perturbations caused by packaging stress. Tuning is more important for matching networks of radio frequency (RF) systems. Possible package resonance and fabrication process variations may cause instability, which is a major problem in RF systems. Thus, precautions need to be taken in order to maintain the overall stability of components and the final system itself. Electrically erasable programmable read-only memory switches (EEPROMs) occupy less die area compared to e-fuses and microelectromechanical system (MEMS) switches, thus EEPROMs are proposed to be used as tuning switches in millimetre-wave (mm-wave) applications. It is anticipated that EEPROM switches will also enable multi-time programming because of the smaller area and the fact that more switches can be used for fine-tuning. The problem addressed in this research is how suitable EEPROMs are for switching applications in the mm-wave region. The main focus of this dissertation is to characterise the suitability of EEPROM switches qualitatively for tuning with systems operating in the mm-wave spectrum. 130 nm SiGe BiCMOS IBM 8HP process technology was used for simulation and the fabricated prototypes. The Dickson charge pump (CP), two voltage doubler CPs and four floating gate (FG) devices were investigated. Literature and theoretical verification was done using computer aided design (CAD) Cadence software through circuit analysis and the layouts were also designed for integrated circuit (IC) prototype fabrication. The qualitative evaluation of the hypothesis was based on investigating reliability issues, switching characteristics, CP output drive capability and mm-wave characterisation. The maximum measured drain current for FGs was 1.4 mA, 2.7 mA and 3 mA for devices 2, 3 and 4, respectively. The ratio between ON state switching current (after tunnelling) and OFF state switching current (after injection) was 1.5, 1.35 and 6 for devices 2, 3 and 4, respectively. The ratios correlated with the expected results in terms of FG transistor area: a high area results in a higher ratio. Despite the correlation, devices 2 and 3 may be unsuitable because the ratio is less than 2: a smaller ratio between the ON and OFF states could also result in higher losses. The Dickson CP achieved an output voltage of 2.96 V from an input of 1.2 V compared to 3.08 V as computed from the theoretical analysis and 4.5 V from the simulation results. The prototypes of the voltage doubler CP did not perform as expected: a maximum of 1 V was achieved compared to 4.1 – 5 V as in the simulation results. The suitability of FG devices for switching applications depends on the ratio of the ON and OFF states (associated to insertion and isolation losses): the larger the FG transistor area, the higher the ratio. The reliability issues are dominated by the oxide thickness of the transistor, which contributes to charge leakages and charge trapping: smaller transistor length causes more uncertainties. Charge trapping in the oxide increases the probability of leakages and substrate conduction, thus introduces more losses. Based on the findings of this research work, the FG devices promise to be suitable for mm-wave switching applications and there is a need for further research investigation to characterise the devices in the mm-wave region fully. AFRIKAANS : Impedansie-instelling op skyf word gebruik om steurings in geïntegreerde stroombane wat deur verpakkingstres veroorsaak word, te oorkom. Instelling is meer belangrik om netwerke van radiofrekwensiesisteme te paar. Moontlike verpakkingresonansie en variasies in die vervaardigingsproses kan onstabiliteit veroorsaak, wat ‟n groot probleem is in radiofrekwensiesisteme. Voorsorg moet dus getref word om die oorhoofse stabiliteit van komponente en die finale sisteem self te handhaaf. Elektries uitveebare programmeerbare slegs-lees-geheueskakelaars (EEPROMs) neem minder matrysarea op as e-sekerings en die sekerings van mikro-elektromeganiese sisteme en word dus voorgestel vir gebruik as instellingskakelaars in millimetergolfaanwendings. Daar word verwag dat EEPROM-skakelaars ook multi-tydprogrammering sal moontlik maak as gevolg van die kleiner area en die feit dat meer skakelaars gebruik kan word vir fyn instellings. Die probleem wat in hierdie navorsing aandag geniet, is die geskiktheid van EEPROMS vir skakelaanwendings in die millimetergolfstreek. The hooffokus van die verhandeling is om die geskiktheid van EEPROM-skakelaars kwalitatief te karakteriseer vir instelling met sisteme wat in die millimetergolfspektrum funksioneer. Department of Electrical, Electronic and Computer Engineering v University of Pretoria 130 nm SiGe BiCMOS IBM 8HP-prosestegnologie is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp, twee spanningverdubbelinglaaipompe en vier swewendehektoestelle is ondersoek. Literatuur- en teoretiese verifikasie is gedoen met behulp van rekenaarondersteunde-ontwerp (CAD) Cadence-sagteware deur stroombaananalise en die uitleg is ook ontwerp vir die vervaardiging van geïntegreerdestroombaanprototipes. Die kwalitatiewe evaluasie van die hipotese is gebaseer op die ondersoek van betroubaarheidkwessies, skakelingeienskappe, laaipompuitsetdryfvermoë en millimetergolfkarakterisering. Die maksimum gemete dreineerstroom vir swewende hekke was 1.4 mA, 2.7 mA en 3 mA vir onderskeidelik toestelle 2, 3 en 4. Die verhouding tussen die AAN-toestand van die skakelstroom (na tonnelling) en die AF-toestand van die skakelstroom (na inspuiting) was 1.5, 1.35 en 6 vir toestelle 2, 3 en 4, onderskeidelik. Die verhoudings het ooreengestem met die verwagte resultate rakende die swewendehek-transistorareas: ‟n groot area het ‟n hoër verhouding tot gevolg. Nieteenstaande die ooreenstemming, mag toestelle 2 en 3 moontlik nie geskik wees nie, omdat die verhouding kleiner as 2 is: ‟n kleiner verhouding tussen die AAN- en AF-toestande mag ook hoër verliese tot gevolg hê. Die Dickson-laaipomp het ‟n uitsetspanning van 2.96 V vanaf ‟n inset van 1.2 V vergeleke met 3.08 V soos bereken volgens die teoretiese analise en 4.5 V volgens die simulasieresultate. Die prototipes van die spanningverdubbelinglaaipomp het nie gefunksioneer soos verwag is nie: ‟n maksimum van 1 V is bereik vergeleke met 4.1 – 5 V soos in die simulasieresultate. Die geskiktheid van swewendehektoestelle vir skakelingtoepassings hang af van die verhouding van die AAN- en AF-toestande (wat met invoer-en isolasieverlies geassosieer word): hoe groter die swewendehektransistorarea, hoe hoër die verhouding. Die betroubaarheidkwessies word oorheers deur die oksieddikte van die transistor, wat bydra tot ladinglekkasies en ladingvasvangs: korter transistorlengte veroorsaak meer onsekerheid. Ladingvasvangs in die oksied verhoog die moontlikheid van lekkasies en substraatgeleiding en veroorsaak dus groter verlies. Die bevindings van hierdie navorsing toon dat swewendehektoestelle waarskynlik geskik is vir millimetergolfaanwendings en verdere navorsing is nodig om die toestelle volledig in die millimetergolfstreek te karakteriseer. Copyright / Dissertation (MEng)--University of Pretoria, 2013. / Electrical, Electronic and Computer Engineering / unrestricted